CN114121683A - Production method of preset gold-tin solder based on aluminum nitride ceramic - Google Patents
Production method of preset gold-tin solder based on aluminum nitride ceramic Download PDFInfo
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- CN114121683A CN114121683A CN202210077382.2A CN202210077382A CN114121683A CN 114121683 A CN114121683 A CN 114121683A CN 202210077382 A CN202210077382 A CN 202210077382A CN 114121683 A CN114121683 A CN 114121683A
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- gold
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- nitride ceramic
- tin solder
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3677—Wire-like or pin-like cooling fins or heat sinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
Abstract
The invention relates to the technical field of packaging materials, in particular to a production method of a preset gold-tin solder based on aluminum nitride ceramics, the gold-tin solder proportioning stability is greatly improved by the way of electrodepositing the gold-tin solder, the cost of presetting the gold-tin solder is greatly reduced by the whole process method, the thickness of the gold layer of the graphic layer, the thickness of the preset gold-tin-aluminum nitride ceramic thin film circuit obtained by the method and the ratio of the gold and the tin can be controlled, masks with different sizes can be made according to the requirements to control the size and the position of the preset gold and the tin, thereby accurate customer's encapsulation demand of satisfying has solved traditional packaging mode and has placed on aluminium nitride ceramic heat sink through gold tin solder piece, and the mode of placing the optical chip on gold tin solder piece realizes the encapsulation again, and along with high integration, the demand of high fineness promotes, and such packaging mode is no longer fit for the problem of high transmission rate optical module.
Description
Technical Field
The invention relates to the technical field of packaging materials, in particular to a production method of a preset gold-tin solder based on aluminum nitride ceramics.
Background
The aluminum nitride ceramic is used as an ideal heat dissipation and packaging material for a new generation of large-scale integrated circuits, semiconductor module circuits and high-power photoelectric devices, and has the advantages of high heat conductivity, reliable electrical insulation, low dielectric constant and dielectric loss, matching of thermal expansion coefficient with a silicon semiconductor element, high resistivity, good mechanical property and corrosion resistance and the like. In optical module or semiconductor high-power laser medical use, a chip can generate a large amount of heat, a good heat dissipation channel is needed, and a good heat dissipation solution is an extremely key technology.
Traditional packaging mode places on aluminium nitride ceramic heat sink through gold tin solder piece, places the mode realization encapsulation on gold tin solder piece with the optical chip again, and along with high integration degree, the demand of high fineness promotes, and such packaging mode no longer is fit for high transmission rate optical module.
Disclosure of Invention
Aiming at the problems, the invention provides a production method of a preset gold-tin solder based on aluminum nitride ceramics.
The technical scheme is that the preset gold-tin solder production method based on the aluminum nitride ceramic comprises the following steps:
s1, cleaning and drying aluminum nitride ceramics;
s2, preparing a seed metal layer on the surface of the cleaned and dried aluminum nitride ceramic;
s3, carrying out first photoetching treatment on the aluminum nitride ceramic with the seed metal layer prepared;
s4, preparing a pattern layer on the aluminum nitride ceramic subjected to the first photoetching treatment;
s5, carrying out second photoetching treatment on the aluminum nitride ceramic with the pattern layer prepared;
s6, performing gold-tin electrodeposition treatment on the aluminum nitride ceramic subjected to the second photoetching treatment;
s7, photoresist treatment is carried out on the aluminum nitride ceramic subjected to gold-tin electrodeposition treatment;
s8, removing a seed layer of the aluminum nitride ceramic after the photoresist treatment;
s9, cutting and separating the aluminum nitride ceramic subjected to seed layer removal treatment to obtain the semiconductor aluminum nitride ceramic preset gold-tin solder heat sink.
Optionally, in S2, the seed metal layer includes Ti, Pt, and Au.
Further, in S2, the seed metal layer had a Ti thickness of 100nm, a Pt thickness of 200nm, and an Au thickness of 100 nm.
Optionally, in S3, the region to be patterned is masked by a mask, and the rest is blocked by the photoresist.
Further, in S4, a pattern layer is obtained by electrodeposition of gold.
Optionally, in S4, the thickness of the pattern layer Au is 600nm-1 um.
Further, in S5, the second photolithography obtains a desired pre-set gold-tin pattern layer on the basis of the pattern layer through the mask, and the rest is masked with the photoresist.
Alternatively, in S6, gold tin is deposited by cyanide-free electrodeposition.
Further, in S6, the ratio of gold to tin is Au: sn =75% ± 5%: 25% +/-5% and the thickness of the gold-tin layer is 3-10 μm.
Alternatively, in S8, Ti and Au of the seed layer are removed by a wet etchant, leaving the desired pattern layer and the pre-gold-tin layer.
The beneficial effects of the invention at least comprise one of the following;
1. the gold-tin solder proportioning stability is greatly improved by the way of electrodepositing the gold-tin solder.
2. The cost of presetting the gold-tin solder is greatly reduced by the whole process method.
3. The thickness of the gold layer of the graphic layer and the thickness and the gold-tin proportion of the preset gold-tin-aluminum nitride ceramic thin film circuit obtained by the method can be controlled, and masks with different sizes can be made according to requirements to control the size and the position of the preset gold and tin, so that the packaging requirements of customers are accurately met.
4. The problem of traditional packaging mode place on aluminium nitride pottery heat sink through gold tin solder piece, realize the encapsulation with the mode that the optical chip was placed on gold tin solder piece again, along with high integration degree, the demand of high fineness promotes, such packaging mode no longer is fit for high transmission rate optical module is solved.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail with reference to the following embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the scope of the invention.
In the description of the present invention, it should be noted that the terms "upper", "lower", and the like may be used for indicating the orientation or positional relationship based on the shown orientation or positional relationship, which is only for the convenience of describing the present invention and simplifying the description, but not for indicating or implying that the referred device or element must have a specific orientation, be constructed in a specific orientation and operation, and thus should not be construed as limiting the present invention; the terms "first," "second," and the like, as may be used herein, are used for descriptive purposes only and are not intended to indicate or imply relative importance, and moreover, the terms "mounted," "connected," and "connected" are to be construed broadly and include, for example, fixed connections, removable connections, or integral connections unless otherwise expressly stated or limited; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Example 1
A preset gold-tin solder production method based on aluminum nitride ceramics comprises the following steps:
s1, cleaning and drying aluminum nitride ceramics;
s2, preparing a seed metal layer on the surface of the cleaned and dried aluminum nitride ceramic;
s3, carrying out first photoetching treatment on the aluminum nitride ceramic with the seed metal layer prepared;
s4, preparing a pattern layer on the aluminum nitride ceramic subjected to the first photoetching treatment;
s5, carrying out second photoetching treatment on the aluminum nitride ceramic with the pattern layer prepared;
s6, performing gold-tin electrodeposition treatment on the aluminum nitride ceramic subjected to the second photoetching treatment;
s7, photoresist treatment is carried out on the aluminum nitride ceramic subjected to gold-tin electrodeposition treatment;
s8, removing a seed layer of the aluminum nitride ceramic after the photoresist treatment;
s9, cutting and separating the aluminum nitride ceramic subjected to seed layer removal treatment to obtain the semiconductor aluminum nitride ceramic preset gold-tin solder heat sink.
The design aims to greatly improve the proportioning stability of the gold-tin solder in a manner of electrodepositing the gold-tin solder, and greatly reduce the cost of presetting the gold-tin solder by a whole set of process method.
The position precision of the preset gold-tin solder can reach within +/-10 mu m, and the size precision of the gold-tin solder can reach within +/-5 mu m. The process mode of cyanide-free electrodeposition of gold and tin can also adjust the ratio of gold and tin in gold and tin solder, the melting point of gold and tin alloy is controlled at 280 ℃, and the gold and tin alloy has good wettability, weldability and oxidation resistance, thereby fully meeting the differentiation requirements of different eutectic packaging equipment in the future. Meanwhile, the cyanide-free electrodeposition process mode greatly reduces the consumption of noble metals brought by other processes by depositing the specified gold-tin solder in the specified area, and achieves the purposes of environmental protection and no waste.
Example 2
A preset gold-tin solder production method based on aluminum nitride ceramics comprises the following steps:
s1, cleaning and drying aluminum nitride ceramics;
s2, preparing a seed metal layer on the surface of the cleaned and dried aluminum nitride ceramic, wherein the seed metal layer contains Ti, Pt and Au, and the thickness of Ti, Pt and Au in the seed metal layer is 100nm, 200nm and 100 nm;
s3, carrying out first photoetching treatment on the aluminum nitride ceramic with the seed metal layer prepared, covering a region needing to form a pattern through a mask plate, and shielding the rest part with photoresist;
s4, preparing a pattern layer on the aluminum nitride ceramic subjected to the first photoetching treatment, and obtaining the pattern layer in an electro-deposition gold mode, wherein the thickness of the pattern layer Au is 600 nm;
s5, carrying out second photoetching treatment on the aluminum nitride ceramic with the pattern layer prepared, wherein the second photoetching is carried out to obtain a required preset gold-tin pattern layer on the basis of the pattern layer through a mask plate, and the rest part is shielded by photoresist;
s6, performing gold-tin electrodeposition treatment on the aluminum nitride ceramic subjected to the second photoetching treatment, and depositing gold and tin in a cyanide-free electrodeposition mode, wherein the ratio of gold to tin is Au: sn = 80%: 20 percent, and the thickness of the gold tin layer is 3 mu m;
s7, photoresist treatment is carried out on the aluminum nitride ceramic subjected to gold-tin electrodeposition treatment;
s8, removing the seed layer of the aluminum nitride ceramic after photoresist treatment, removing Ti and Au from the seed layer by using a wet etching agent, and leaving a required pattern layer and a preset gold-tin layer;
s9, cutting and separating the aluminum nitride ceramic subjected to seed layer removal treatment to obtain the semiconductor aluminum nitride ceramic preset gold-tin solder heat sink.
The design aims to greatly improve the proportioning stability of the gold-tin solder in a manner of electrodepositing the gold-tin solder, and greatly reduce the cost of presetting the gold-tin solder by a whole set of process method.
The position precision of the preset gold-tin solder can reach within +/-10 mu m, and the size precision of the gold-tin solder can reach within +/-5 mu m. The process mode of cyanide-free electrodeposition of gold and tin can also adjust the ratio of gold and tin in gold and tin solder, the melting point of gold and tin alloy is controlled at 280 ℃, and the gold and tin alloy has good wettability, weldability and oxidation resistance, thereby fully meeting the differentiation requirements of different eutectic packaging equipment in the future. Meanwhile, the cyanide-free electrodeposition process mode greatly reduces the consumption of noble metals brought by other processes by depositing the specified gold-tin solder in the specified area, and achieves the purposes of environmental protection and no waste.
Example 3
A preset gold-tin solder production method based on aluminum nitride ceramics comprises the following steps:
s1, cleaning and drying aluminum nitride ceramics;
s2, preparing a seed metal layer on the surface of the cleaned and dried aluminum nitride ceramic, wherein the seed metal layer contains Ti, Pt and Au, and the thickness of Ti, Pt and Au in the seed metal layer is 100nm, 200nm and 100 nm;
s3, carrying out first photoetching treatment on the aluminum nitride ceramic with the seed metal layer prepared, covering a region needing to form a pattern through a mask plate, and shielding the rest part with photoresist;
s4, preparing a pattern layer on the aluminum nitride ceramic subjected to the first photoetching treatment, and obtaining the pattern layer in an electro-gold deposition mode, wherein the thickness of the pattern layer Au is 1 um;
s5, carrying out second photoetching treatment on the aluminum nitride ceramic with the pattern layer prepared, wherein the second photoetching is carried out to obtain a required preset gold-tin pattern layer on the basis of the pattern layer through a mask plate, and the rest part is shielded by photoresist;
s6, performing gold-tin electrodeposition treatment on the aluminum nitride ceramic subjected to the second photoetching treatment, and depositing gold and tin in a cyanide-free electrodeposition mode, wherein the ratio of gold to tin is Au: sn = 70%: 30 percent, and the thickness of the gold tin layer is 10 mu m;
s7, photoresist treatment is carried out on the aluminum nitride ceramic subjected to gold-tin electrodeposition treatment;
s8, removing the seed layer of the aluminum nitride ceramic after photoresist treatment, removing Ti and Au from the seed layer by using a wet etching agent, and leaving a required pattern layer and a preset gold-tin layer;
s9, cutting and separating the aluminum nitride ceramic subjected to seed layer removal treatment to obtain the semiconductor aluminum nitride ceramic preset gold-tin solder heat sink.
The design aims to greatly improve the proportioning stability of the gold-tin solder in a manner of electrodepositing the gold-tin solder, and greatly reduce the cost of presetting the gold-tin solder by a whole set of process method.
The position precision of the preset gold-tin solder can reach within +/-10 mu m, and the size precision of the gold-tin solder can reach within +/-5 mu m. The process mode of cyanide-free electrodeposition of gold and tin can also adjust the ratio of gold and tin in gold and tin solder, the melting point of gold and tin alloy is controlled at 280 ℃, and the gold and tin alloy has good wettability, weldability and oxidation resistance, thereby fully meeting the differentiation requirements of different eutectic packaging equipment in the future. Meanwhile, the cyanide-free electrodeposition process mode greatly reduces the consumption of noble metals brought by other processes by depositing the specified gold-tin solder in the specified area, and achieves the purposes of environmental protection and no waste.
Example 4
A preset gold-tin solder production method based on aluminum nitride ceramics comprises the following steps:
s1, cleaning and drying aluminum nitride ceramics;
s2, preparing a seed metal layer on the surface of the cleaned and dried aluminum nitride ceramic, wherein the seed metal layer contains Ti, Pt and Au, and the thickness of Ti, Pt and Au in the seed metal layer is 100nm, 200nm and 100 nm;
s3, carrying out first photoetching treatment on the aluminum nitride ceramic with the seed metal layer prepared, covering a region needing to form a pattern through a mask plate, and shielding the rest part with photoresist;
s4, preparing a pattern layer on the aluminum nitride ceramic subjected to the first photoetching treatment, and obtaining the pattern layer in an electro-deposition gold mode, wherein the thickness of the pattern layer Au is 800 nm;
s5, carrying out second photoetching treatment on the aluminum nitride ceramic with the pattern layer prepared, wherein the second photoetching is carried out to obtain a required preset gold-tin pattern layer on the basis of the pattern layer through a mask plate, and the rest part is shielded by photoresist;
s6, performing gold-tin electrodeposition treatment on the aluminum nitride ceramic subjected to the second photoetching treatment, and depositing gold and tin in a cyanide-free electrodeposition mode, wherein the ratio of gold to tin is Au: sn = 75%: 25 percent, and the thickness of the gold tin layer is 7 mu m;
s7, photoresist treatment is carried out on the aluminum nitride ceramic subjected to gold-tin electrodeposition treatment;
s8, removing the seed layer of the aluminum nitride ceramic after photoresist treatment, removing Ti and Au from the seed layer by using a wet etching agent, and leaving a required pattern layer and a preset gold-tin layer;
s9, cutting and separating the aluminum nitride ceramic subjected to seed layer removal treatment to obtain the semiconductor aluminum nitride ceramic preset gold-tin solder heat sink.
The design aims to greatly improve the proportioning stability of the gold-tin solder in a manner of electrodepositing the gold-tin solder, and greatly reduce the cost of presetting the gold-tin solder by a whole set of process method.
The position precision of the preset gold-tin solder can reach within +/-10 mu m, and the size precision of the gold-tin solder can reach within +/-5 mu m. The process mode of cyanide-free electrodeposition of gold and tin can also adjust the ratio of gold and tin in gold and tin solder, the melting point of gold and tin alloy is controlled at 280 ℃, and the gold and tin alloy has good wettability, weldability and oxidation resistance, thereby fully meeting the differentiation requirements of different eutectic packaging equipment in the future. Meanwhile, the cyanide-free electrodeposition process mode greatly reduces the consumption of noble metals brought by other processes by depositing the specified gold-tin solder in the specified area, and achieves the purposes of environmental protection and no waste.
The foregoing is illustrative of the preferred embodiments of this invention, and it is to be understood that the invention is not limited to the precise form disclosed herein and that various other combinations, modifications, and environments may be resorted to, falling within the scope of the concept as disclosed herein, either as described above or as apparent to those skilled in the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (10)
1. A production method of preset gold-tin solder based on aluminum nitride ceramic is characterized in that: the method comprises the following steps:
s1, cleaning and drying aluminum nitride ceramics;
s2, preparing a seed metal layer on the surface of the cleaned and dried aluminum nitride ceramic;
s3, carrying out first photoetching treatment on the aluminum nitride ceramic with the seed metal layer prepared;
s4, preparing a pattern layer on the aluminum nitride ceramic subjected to the first photoetching treatment;
s5, carrying out second photoetching treatment on the aluminum nitride ceramic with the pattern layer prepared;
s6, performing gold-tin electrodeposition treatment on the aluminum nitride ceramic subjected to the second photoetching treatment;
s7, photoresist treatment is carried out on the aluminum nitride ceramic subjected to gold-tin electrodeposition treatment;
s8, removing a seed layer of the aluminum nitride ceramic after the photoresist treatment;
s9, cutting and separating the aluminum nitride ceramic subjected to seed layer removal treatment to obtain the semiconductor aluminum nitride ceramic preset gold-tin solder heat sink.
2. The method for producing the preplaced gold-tin solder based on the aluminum nitride ceramic as claimed in claim 1, wherein: in S2, the seed metal layer includes Ti, Pt, and Au.
3. The method for producing the preplaced gold-tin solder based on the aluminum nitride ceramic as claimed in claim 2, wherein: in S2, the thickness of Ti, Pt and Au in the seed metal layer is 100nm, 200nm and 100nm respectively.
4. The method for producing the preplaced gold-tin solder based on the aluminum nitride ceramic as claimed in claim 3, wherein: in S3, the region where a pattern is to be formed is masked by a mask, and the rest is masked by a photoresist.
5. The method for producing the preplaced gold-tin solder based on the aluminum nitride ceramic as claimed in claim 4, wherein: in S4, a pattern layer is obtained by electrodeposition of gold.
6. The method for producing the preplaced gold-tin solder based on the aluminum nitride ceramic as claimed in claim 5, wherein: in S4, the thickness of the pattern layer Au is 600nm-1 um.
7. The method for producing the preplaced gold-tin solder based on the aluminum nitride ceramic as claimed in claim 6, wherein: in S5, the second photoetching obtains the needed preset gold-tin pattern layer on the basis of the pattern layer through the mask plate, and the rest parts are shielded by the photoresist.
8. The method for producing the preplaced gold-tin solder based on the aluminum nitride ceramic as claimed in claim 7, wherein: in S6, gold tin is deposited by cyanide-free electrodeposition.
9. The method for producing the preplaced gold-tin solder based on the aluminum nitride ceramic as claimed in claim 8, wherein: in S6, the ratio of gold to tin is Au: sn =75% ± 5%: 25% +/-5% and the thickness of the gold-tin layer is 3-10 μm.
10. The method for producing the preplaced gold-tin solder based on the aluminum nitride ceramic as claimed in claim 9, wherein: in S8, the Ti and Au of the seed layer are removed by a wet etchant, leaving the desired pattern layer and the pre-gold-tin layer.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202210077382.2A CN114121683A (en) | 2022-01-24 | 2022-01-24 | Production method of preset gold-tin solder based on aluminum nitride ceramic |
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| CN202210077382.2A CN114121683A (en) | 2022-01-24 | 2022-01-24 | Production method of preset gold-tin solder based on aluminum nitride ceramic |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115636695A (en) * | 2022-12-21 | 2023-01-24 | 四川科尔威光电科技有限公司 | Preparation method of semiconductor aluminum nitride ceramic preset gold-tin solder heat sink |
| CN116403912A (en) * | 2023-03-06 | 2023-07-07 | 汕尾市栢林电子封装材料有限公司 | Method for preparing aluminum nitride/tungsten copper gold tin heat sink |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623356A (en) * | 2011-12-31 | 2012-08-01 | 广东风华高新科技股份有限公司 | Preparation method of chip-scale weldable ceramic heat sink |
| CN106757221A (en) * | 2016-12-05 | 2017-05-31 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of method that ceramic base plate surface selectively prepares gold-tin eutectic solder |
| CN113539841A (en) * | 2021-07-19 | 2021-10-22 | 四川科尔威光电科技有限公司 | Process for producing and manufacturing gold-tin alloy thin film integrated circuit |
-
2022
- 2022-01-24 CN CN202210077382.2A patent/CN114121683A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102623356A (en) * | 2011-12-31 | 2012-08-01 | 广东风华高新科技股份有限公司 | Preparation method of chip-scale weldable ceramic heat sink |
| CN106757221A (en) * | 2016-12-05 | 2017-05-31 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of method that ceramic base plate surface selectively prepares gold-tin eutectic solder |
| CN113539841A (en) * | 2021-07-19 | 2021-10-22 | 四川科尔威光电科技有限公司 | Process for producing and manufacturing gold-tin alloy thin film integrated circuit |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115636695A (en) * | 2022-12-21 | 2023-01-24 | 四川科尔威光电科技有限公司 | Preparation method of semiconductor aluminum nitride ceramic preset gold-tin solder heat sink |
| CN116403912A (en) * | 2023-03-06 | 2023-07-07 | 汕尾市栢林电子封装材料有限公司 | Method for preparing aluminum nitride/tungsten copper gold tin heat sink |
| CN116403912B (en) * | 2023-03-06 | 2023-11-28 | 汕尾市栢林电子封装材料有限公司 | Method for preparing aluminum nitride/tungsten copper gold tin heat sink |
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Application publication date: 20220301 |