CN108565672A - A kind of preparation method of semiconductor laser thermal sediment - Google Patents
A kind of preparation method of semiconductor laser thermal sediment Download PDFInfo
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- CN108565672A CN108565672A CN201810324378.5A CN201810324378A CN108565672A CN 108565672 A CN108565672 A CN 108565672A CN 201810324378 A CN201810324378 A CN 201810324378A CN 108565672 A CN108565672 A CN 108565672A
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- photoresist
- semiconductor laser
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- laser thermal
- thermal sediment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/024—Arrangements for thermal management
- H01S5/02469—Passive cooling, e.g. where heat is removed by the housing as a whole or by a heat pipe without any active cooling element like a TEC
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Laser Beam Processing (AREA)
Abstract
The present invention provides a kind of preparation methods of semiconductor laser thermal sediment, belong to technical field of semiconductors.First cleaning, drying aluminium nitride or beryllium oxide ceramics substrate, and carry out first time photoetching treatment；Metal layer is prepared again；Then photoresist is carried out to handle；Carry out second of photoetching treatment；Then it is coated with gold-tin alloy layer；Photoresist is carried out again to handle；The product for completing that photoresist is gone to handle is subjected to cutting separation, obtains the heat sink of semiconductor laser.For the present invention using beryllium oxide or the aluminium nitride ceramics of high heat conductance as substrate, thermal conductivity is all higher than 200mW/K；It is coated with the metal layer conducive to heat dissipation on substrate, further increases heat sink heat dissipation effect.
Description
Technical field
The present invention relates to technical field of semiconductors, more particularly to a kind of preparation method of semiconductor laser thermal sediment.
Background technology
Aluminium nitride ceramic substrate has excellent heat conductivity, reliable electrical insulating property, low dielectric constant and dielectric damage
The advantages that consumption, coefficient of thermal expansion match with silicon semiconductor element, high resistivity, good mechanical performance and corrosion resistance,
To as large scale integrated circuit of new generation, the ideal heat dissipation of semiconductor module circuit and high-power photoelectric device and package material
Material.In semi-conductor high power laser fabrication process, it is contemplated that since chip will produce a large amount of heat, structure at work
Good heat dissipation channel there are one usually requiring.At present in the various key technologies of high-power photoelectric device, heat dissipation problem
Solution is an extremely critical technology.
Invention content
The purpose of the present invention is to provide a kind of preparation methods of semiconductor laser thermal sediment, to solve existing semiconductor
The problem of heat sink radiating efficiency difference in laser.
In order to solve the above technical problems, the present invention provides a kind of preparation method of semiconductor laser thermal sediment, including it is as follows
Step：
Step 1, cleaning, drying aluminium nitride or beryllium oxide ceramics substrate, and carry out first time photoetching treatment；
Step 1 resulting product is prepared metal layer by step 2；
Step 2 resulting product is carried out photoresist and handles by step 3；
Step 4 carries out second of photoetching treatment；
Step 4 resulting product is coated with gold-tin alloy layer by step 5；
Step 6 carries out photoresist and handles again；
The product for completing that photoresist is gone to handle is carried out cutting separation by step 7, obtains the heat sink of semiconductor laser.
Optionally, the first time photoetching treatment and second of photoetching treatment include spraying photoresist, front baking, exposure
Light, development, cleaning and rear baking.
Optionally, the thickness for the photoresist that the first time photoetching treatment obtains is 1~30 μm；At second of photoetching
The thickness for managing obtained photoresist is 1~35 μm.
Optionally, the metal layer can be obtained by PVD, plating or chemical plating.
Optionally, the metal layer includes one or more of Cu, Ni, Pd, Au, Ti, TiW.
Optionally, the photoresist that second of photoetching treatment obtains is positive photoresist or negative photoresist, and pre-bake temperature is
70~150 DEG C, the time is 1~20min；Exposure dose is 10 ~ 1000mj, and the time of development is 5~300s；It is 70 to dry temperature afterwards
~150 DEG C, the time is 1 ~ 20min.
Optionally, the mass ratio of gold and tin is 1 in the gold-tin alloy layer：9 to 9：1, the thickness of the gold-tin alloy layer
It is 1~30 μm.
Optionally, when carrying out cutting separation by cutting equipment in the step 7, setting workpiece moves, cutting equipment
Grinding wheel spindle rotates but position is kept fixed.
Optionally, the cutting equipment selects soft knife to be cut.
A kind of preparation method of semiconductor laser thermal sediment, cleaning, drying aluminium nitride or beryllium oxide are provided in the present invention
Ceramic substrate, and carry out first time photoetching treatment；Metal layer is prepared again；Then photoresist is carried out to handle；Carry out second of light
Quarter is handled；Then it is coated with gold-tin alloy layer；Photoresist is carried out again to handle；The product for completing that photoresist is gone to handle is cut
Separation is cut, the heat sink of semiconductor laser is obtained.The present invention using the aluminium nitride ceramics of beryllium oxide or high heat conductance as substrate,
Its thermal conductivity is all higher than 200mW/K；It is coated with the metal layer conducive to heat dissipation on substrate, further increases heat sink heat dissipation effect.
Description of the drawings
Fig. 1 is the flow diagram of the preparation method of semiconductor laser thermal sediment provided by the invention.
Specific implementation mode
Below in conjunction with the drawings and specific embodiments to a kind of preparation method of semiconductor laser thermal sediment proposed by the present invention
It is described in further detail.According to following explanation and claims, advantages and features of the invention will become apparent from.It should be noted
That attached drawing is all made of very simplified form and uses non-accurate ratio, only to it is convenient, lucidly aid in illustrating this hair
The purpose of bright embodiment.
Embodiment one
This hair provides a kind of preparation method of semiconductor laser thermal sediment, and flow diagram is as shown in Figure 1.This method includes such as
Lower step：
Step S11, cleaning, drying aluminium nitride or beryllium oxide ceramics substrate, and carry out first time photoetching treatment；
Step S12, step S11 resulting products are prepared into metal layer；
Step S13, step S12 resulting products photoresist is carried out to handle；
Step S14, second of photoetching treatment is carried out；
Step S15, step S14 resulting products are coated with gold-tin alloy layer；
Step S16, photoresist is carried out again to handle；
Step S17, the product for completing that photoresist is gone to handle is subjected to cutting separation, obtains the heat sink of semiconductor laser.
Specifically, cleaning dry aluminium nitride or beryllium oxide ceramics substrate first, and first time photoetching treatment is carried out to it, it is described
First time photoetching treatment includes spraying photoresist, front baking, exposure, development, cleaning and rear baking, and the thickness of obtained photoresist is 1
~30 μm；Then by PVD, plating or chemically plating for metal layer, the metal layer includes in Cu, Ni, Pd, Au, Ti, TiW
One or more；Then the product that above-mentioned steps obtain is carried out photoresist to handle, then carries out second of photoetching treatment,
Second of photoresist processing is identical with the first time photoresist processing, including spray photoresist, front baking, exposure, development,
Cleaning and rear baking.The photoresist that second of photoetching treatment obtains is positive photoresist or negative photoresist, and thickness is 1~35 μm,
Pre-bake temperature is 70~150 DEG C, and the time is 1~20min；Exposure dose is 10 ~ 1000mj, and the time of development is 5~300s；Afterwards
It is 70~150 DEG C to dry temperature, and the time is 1 ~ 20min；It is coated with gold-tin alloy layer to it again, gold and tin in the gold-tin alloy layer
Mass ratio is 1：9 to 9：1, the thickness of the gold-tin alloy layer is 1~30 μm；Photoresist is carried out again to handle, it finally will be complete
Cutting separation is carried out at the product for going photoresist to handle, obtains the heat sink of semiconductor laser.It is cut by cutting equipment
When cutting separation, setting workpiece moves, and the grinding wheel spindle of cutting equipment rotates but position is kept fixed, and soft knife is selected to be cut.
Foregoing description is only the description to present pre-ferred embodiments, not to any restriction of the scope of the invention, this hair
Any change, the modification that the those of ordinary skill in bright field does according to the disclosure above content, belong to the protection of claims
Range.
Claims (9)
1. a kind of preparation method of semiconductor laser thermal sediment, which is characterized in that include the following steps：
Step 1, cleaning, drying aluminium nitride or beryllium oxide ceramics substrate, and carry out first time photoetching treatment；
Step 1 resulting product is prepared metal layer by step 2；
Step 2 resulting product is carried out photoresist and handles by step 3；
Step 4 carries out second of photoetching treatment；
Step 4 resulting product is coated with gold-tin alloy layer by step 5；
Step 6 carries out photoresist and handles again；
The product for completing that photoresist is gone to handle is carried out cutting separation by step 7, obtains the heat sink of semiconductor laser.
2. the preparation method of semiconductor laser thermal sediment as described in claim 1, which is characterized in that at the first time photoetching
Reason and second of photoetching treatment include spraying photoresist, front baking, exposure, development, cleaning and dry afterwards.
3. the preparation method of semiconductor laser thermal sediment as claimed in claim 2, which is characterized in that at the first time photoetching
The thickness for managing obtained photoresist is 1~30 μm；The thickness for the photoresist that second of photoetching treatment obtains is 1~35 μm.
4. the preparation method of semiconductor laser thermal sediment as described in claim 1, which is characterized in that the metal layer can lead to
PVD, plating or chemical plating is crossed to obtain.
5. the preparation method of semiconductor laser thermal sediment as claimed in claim 4, which is characterized in that the metal layer includes
One or more of Cu, Ni, Pd, Au, Ti, TiW.
6. the preparation method of semiconductor laser thermal sediment as described in claim 1, which is characterized in that second of photoetching treatment obtains
The photoresist arrived is positive photoresist or negative photoresist, and pre-bake temperature is 70~150 DEG C, and the time is 1~20min；Expose agent
Amount is 10 ~ 1000mj, and the time of development is 5~300s；It is 70~150 DEG C to dry temperature afterwards, and the time is 1 ~ 20min.
7. the preparation method of semiconductor laser thermal sediment as described in claim 1, which is characterized in that in the gold-tin alloy layer
The mass ratio of gold and tin is 1：9 to 9：1, the thickness of the gold-tin alloy layer is 1~30 μm.
8. the preparation method of semiconductor laser thermal sediment as described in claim 1, which is characterized in that pass through in the step 7
When cutting equipment carries out cutting separation, setting workpiece moves, and the grinding wheel spindle of cutting equipment rotates but position is kept fixed.
9. the preparation method of semiconductor laser thermal sediment as claimed in claim 8, which is characterized in that the cutting equipment is selected
Soft knife is cut.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810324378.5A CN108565672A (en) | 2018-04-12 | 2018-04-12 | A kind of preparation method of semiconductor laser thermal sediment |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810324378.5A CN108565672A (en) | 2018-04-12 | 2018-04-12 | A kind of preparation method of semiconductor laser thermal sediment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116403912A (en) * | 2023-03-06 | 2023-07-07 | 汕尾市栢林电子封装材料有限公司 | Method for preparing aluminum nitride/tungsten copper gold tin heat sink |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000020823A (en) * | 1998-09-24 | 2000-04-15 | 김종수 | Method for manufacturing metal microscopic construction |
| CN101005108A (en) * | 2006-01-16 | 2007-07-25 | 深圳大学 | Power type light emitting diode heat sink and its method |
| CN101267087A (en) * | 2007-03-14 | 2008-09-17 | 中国科学院半导体研究所 | Method for making thermal sediment of reverse installation of GaN base laser |
| CN102623356A (en) * | 2011-12-31 | 2012-08-01 | 广东风华高新科技股份有限公司 | Preparation method of chip-scale weldable ceramic heat sink |
-
2018
- 2018-04-12 CN CN201810324378.5A patent/CN108565672A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20000020823A (en) * | 1998-09-24 | 2000-04-15 | 김종수 | Method for manufacturing metal microscopic construction |
| CN101005108A (en) * | 2006-01-16 | 2007-07-25 | 深圳大学 | Power type light emitting diode heat sink and its method |
| CN101267087A (en) * | 2007-03-14 | 2008-09-17 | 中国科学院半导体研究所 | Method for making thermal sediment of reverse installation of GaN base laser |
| CN102623356A (en) * | 2011-12-31 | 2012-08-01 | 广东风华高新科技股份有限公司 | Preparation method of chip-scale weldable ceramic heat sink |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116403912A (en) * | 2023-03-06 | 2023-07-07 | 汕尾市栢林电子封装材料有限公司 | Method for preparing aluminum nitride/tungsten copper gold tin heat sink |
| CN116403912B (en) * | 2023-03-06 | 2023-11-28 | 汕尾市栢林电子封装材料有限公司 | Method for preparing aluminum nitride/tungsten copper gold tin heat sink |
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Application publication date: 20180921 |