CN114112058B - Microbridge structure and preparation method thereof - Google Patents
Microbridge structure and preparation method thereof Download PDFInfo
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- CN114112058B CN114112058B CN202111398651.7A CN202111398651A CN114112058B CN 114112058 B CN114112058 B CN 114112058B CN 202111398651 A CN202111398651 A CN 202111398651A CN 114112058 B CN114112058 B CN 114112058B
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- 238000002360 preparation method Methods 0.000 title abstract description 7
- 238000010521 absorption reaction Methods 0.000 claims abstract description 104
- 239000002086 nanomaterial Substances 0.000 claims abstract description 103
- 230000005855 radiation Effects 0.000 claims abstract description 48
- 239000010410 layer Substances 0.000 claims description 235
- 238000005253 cladding Methods 0.000 claims description 18
- 239000000463 material Substances 0.000 claims description 11
- 239000011248 coating agent Substances 0.000 claims description 10
- 238000000576 coating method Methods 0.000 claims description 10
- 238000004519 manufacturing process Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 9
- 239000011247 coating layer Substances 0.000 claims description 8
- 230000002745 absorbent Effects 0.000 claims description 6
- 239000002250 absorbent Substances 0.000 claims description 6
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 6
- 229910052732 germanium Inorganic materials 0.000 claims description 6
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 2
- 239000006096 absorbing agent Substances 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000013461 design Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
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- 238000006243 chemical reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
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- 238000012546 transfer Methods 0.000 description 2
- 241000237503 Pectinidae Species 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 239000002355 dual-layer Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
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- 238000002310 reflectometry Methods 0.000 description 1
- 235000020637 scallop Nutrition 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00134—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems comprising flexible or deformable structures
- B81C1/00142—Bridges
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0278—Temperature sensors
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Abstract
The invention provides a micro-bridge structure and a preparation method thereof, and belongs to the technical field of optics. The microbridge structure comprises: an absorption layer, a thermosensitive layer and an electrical connection layer; wherein the absorption layer, the thermosensitive layer and the electric connection layer are sequentially arranged along the incident direction of incident radiation; and a micro-nano structure is arranged on one side of the absorption layer facing the incident radiation, and the micro-nano structure is a sub-wavelength structure. The microbridge structure and the preparation method thereof provided by the embodiment of the invention realize that the absorption rate of the microbridge structure to incident radiation is increased under the condition of not increasing the filling coefficient of the absorption layer, and the performance of the microbridge structure is improved, so that the performance of the bolometer adopting the microbridge structure is improved.
Description
Technical Field
The application relates to the technical field of optical devices, in particular to a micro-bridge structure and a preparation method thereof.
Background
The bolometer includes an absorption layer, a heat sensitive layer, and an electrical connection layer. Infrared radiation absorbed by the absorption layer is converted into an electric signal through the thermosensitive layer and then is output through the electric connection layer, so that infrared detection is realized. Microbridge structures including an absorbing layer are often employed to improve the performance of bolometers. The absorption layer is positioned on the bridge deck of the micro-bridge structure, and the bridge deck is supported by bridge legs. The larger the duty ratio of the bridge legs is, the more stable the micro-bridge structure is; the thinner the bridge legs, the better the thermal insulation of the microbridge structure. The parameter filling coefficient for measuring the effect of the absorption layer, namely the duty cycle of the bridge deck. The higher the fill factor, the better the absorption of the incident radiation by the absorption layer.
The related art increases the filling factor of the absorption layer by increasing the number of layers of the microbridge structure, thereby improving the performance of the bolometer.
In the process of implementing the present application, the inventors found that there are at least the following problems in the related art:
With the development of bolometers, a technical gap is encountered in shrinking the pixel size. As the pixel size decreases, the bridge legs cannot be reduced too much in size in order to ensure mechanical and thermal insulation properties of the microbridge structure. This results in an increase in the duty cycle of the bridge legs, which in turn results in a further decrease in the duty cycle of the bridge deck, i.e. the filling factor of the absorption layer, which further results in a reduced performance of the bolometer.
Disclosure of Invention
In order to solve the technical problem that the performance of the bolometer is reduced due to the fact that the filling coefficient is reduced along with the reduction of the pixel size in the related art, the embodiment of the application provides a microbridge structure and a bolometer comprising the microbridge structure and a manufacturing method of the microbridge structure.
In a first aspect, embodiments of the present application provide a microbridge structure comprising an absorber layer, a thermosensitive layer, and an electrical connection layer;
wherein the absorption layer, the thermosensitive layer and the electric connection layer are sequentially arranged along the incident direction of incident radiation;
and a micro-nano structure is arranged on one side of the absorption layer facing the incident radiation, and the micro-nano structure is a sub-wavelength structure.
Optionally, the micro-nano structure is divided into four quadrants by the first section and the second section;
the projection of the shape of the micro-nano structure in any quadrant on the first section is the same as the projection on the second section;
the shape in any quadrant symmetrically forms the shape of the micro-nano structure along the first section and the second section respectively;
the first section and the second section are perpendicular, and the first section and the second section are intersected to obtain a height axis of the micro-nano structure.
Optionally, the micro-nano structures are arranged in an array in the form of super-structural units;
the super-structure units are in a shape of a close-packed graph;
The micro-nano structure is vertically arranged at the center and/or the vertex position of the close-packed graph.
Optionally, the shape of any two super-structural units is different.
Alternatively, any two of the super-structure units are identical in shape.
Optionally, the period of the micro-nano structure is greater than or equal to 300nm and less than or equal to 1500nm.
Optionally, the period of any two micro-nano structures is different.
Optionally, the period of any two micro-nano structures is the same.
Optionally, the shape of any two of the micro-nano structures in the micro-bridge structure is the same.
Optionally, the shape of any two micro-nano structures in the micro-bridge structure is partially identical.
Optionally, the material of the absorption layer and the micro-nano structure is the same.
Optionally, the material of the absorption layer and the micro-nano structure is different.
Optionally, the micro-nano structure has an aspect ratio of less than or equal to 20.
Optionally, the shape of the micro-nano structure comprises a cylinder, a square column, a hollow cylinder, a hollow square column, a circular ring column and a square ring column.
Optionally, the micro-nanostructure material comprises at least one of crystalline silicon and crystalline germanium.
Optionally, the absorption layer includes a light receiving layer and a supporting layer;
The support layer is used for supporting the light receiving layer so that the distance between the light receiving layer and the thermosensitive layer is larger than or equal to zero;
the micro-nano structure is positioned on one side of the light receiving layer far away from the supporting layer.
Optionally, the absorption layer is umbrella-shaped;
Wherein the supporting layer is positioned at the center of the surface of the thermosensitive layer;
The light receiving layer covers the bridge deck of the micro-bridge structure.
Optionally, the material of the absorption layer includes at least one of crystalline silicon and crystalline germanium.
Optionally, the microbridge structure further comprises an antireflection film; the anti-reflection film is positioned between the absorption layer and the thermosensitive layer.
Optionally, the thickness of the anti-reflection film is an odd multiple of a quarter wavelength of the incident radiation.
In a second aspect, an embodiment of the present application further provides a bolometer, including the microbridge structure described in any one of the above embodiments.
In a third aspect, an embodiment of the present application provides a method for preparing a micro-bridge structure, which is applicable to the micro-bridge structure described in any one of the foregoing embodiments, and includes:
Providing the thermosensitive layer on one side of the electrical connection layer;
coating a first coating layer on one side of the electric connection layer, on which the thermosensitive layer is arranged;
exposing the first inverse structure on the first cladding layer; the first inverse structure at least partially exposes the thermosensitive layer;
forming the absorption layer on the exposed surface of the thermosensitive layer by utilizing the first counter structure, so that the absorption layer covers the bridge deck of the micro-bridge structure;
removing the first coating layer to obtain the absorption layer;
and forming the micro-nano structure on the light receiving side of the absorption layer.
Optionally, the forming the micro-nano structure on the light receiving side of the absorption layer includes:
coating a second coating layer on the light receiving side of the absorption layer;
Exposing a second inverse structure on the second cladding layer;
Etching a third inverse structure on the absorption layer through the second inverse structure;
And removing the second coating, wherein the structure reserved by the absorption layer is the micro-nano structure.
Optionally, the forming the micro-nano structure on the light receiving side of the absorption layer includes:
forming a structural layer on the light receiving side of the absorption layer;
Coating a third coating layer on the side of the structural layer away from the absorption layer;
exposing a third reflective structure on the third cladding layer;
Exposing a fourth inverse structure on the structural layer through the third inverse structure;
and removing the third coating, wherein the structure reserved by the structural layer is the micro-nano structure.
Optionally, the absorption layer is umbrella-shaped structure.
According to the micro-bridge structure and the manufacturing method thereof provided by the embodiment of the application, the micro-nano structure is arranged on the light receiving side of the absorption layer, so that the reflection and transmission of incident radiation are reduced, and the absorption rate of the micro-bridge structure is improved under the condition that the filling coefficient of the absorption layer is not increased.
Drawings
In order to more clearly describe the embodiments of the present application or the technical solutions in the background art, the following description will describe the drawings that are required to be used in the embodiments of the present application or the background art.
FIG. 1 shows an alternative schematic structure of a micro-bridge structure provided by an embodiment of the present application;
FIG. 2 shows a schematic diagram of yet another alternative configuration of a microbridge structure provided by an embodiment of the present application;
FIG. 3 shows a schematic structural view of yet another alternative micro-bridge structure provided by an embodiment of the present application;
FIG. 4 illustrates an alternative structural schematic of a super-structure unit provided by an embodiment of the present application;
FIG. 5 illustrates yet another alternative structural schematic of a super-structure unit provided by an embodiment of the present application;
FIG. 6 shows an alternative schematic structure of the micro-nano structure provided by the embodiment of the application;
FIG. 7 shows a schematic diagram of yet another alternative micro-nano structure provided by an embodiment of the present application;
FIG. 8 shows a schematic diagram of yet another alternative micro-nano structure provided by an embodiment of the present application;
FIG. 9 illustrates the absorption of incident radiation by an alternative micro-nano structure provided by an embodiment of the present application;
FIG. 10 is a flowchart of a method for manufacturing a micro-bridge structure according to an embodiment of the present application;
FIG. 11 is a schematic diagram of a method for manufacturing a micro-bridge structure according to an embodiment of the present application;
fig. 12 shows still another schematic diagram of a method for manufacturing a micro-bridge structure according to an embodiment of the present application.
Reference numerals in the drawings denote:
100-an absorbent layer; 101-micro-nano structure; 102-a super-structural unit; 103-a light receiving layer; 104-an absorbent layer;
200-a thermosensitive layer; 300-an electrical connection layer;
400-a first cladding layer; 401-a first inverse structure; 500-second cladding; 501-a second inverse structure; 600-structural layer; 700-third coating; 701-a third mirror structure; 702-fourth inverse structure;
800-an antireflection film.
Detailed Description
For the purpose of making the objects, technical solutions and advantages of the present application more apparent, the embodiments of the present application will be described in further detail with reference to the accompanying drawings. It should be noted that, unless explicitly stated or limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected: can be directly connected or indirectly connected through an intermediate medium, and can be communication between two elements. The specific meaning of the above terms in embodiments of the present application will be understood in detail by those of ordinary skill in the art.
It should be understood that in the description of the present application, the terms "first," "second," and the like are used merely for distinguishing between, and not for representing a sequential, priority, or number. The features of the examples and embodiments described below may be combined with each other without conflict.
Embodiments of the present application will be described below with reference to the accompanying drawings in the embodiments of the present application.
As shown in fig. 1 to 3, the micro-bridge structure provided in the embodiment of the present application includes an absorption layer 100, a thermosensitive layer 200, and an electrical connection layer 300;
wherein the absorption layer 100, the thermosensitive layer 200, and the electrical connection layer 300 are sequentially arranged along an incident direction of incident radiation. The absorption layer 100 is provided with a micro-nano structure 101 on the side facing the incident radiation, the micro-nano structure 101 being a sub-wavelength structure.
Specifically, a sub-wavelength structure refers to a periodic structure in which the characteristic size of the structure is equal to or smaller than the operating wavelength. The micro-nano structure 101 has a modulation effect on the phase of radiation, and when the radiation irradiates the micro-bridge structure provided by the embodiment of the application, the micro-nano structure 101 reduces the reflection and transmission of the radiation, thereby improving the absorptivity of the radiation. It will also be appreciated that since absorption is the conversion of energy between the incident radiation and the material, selecting a micro-nano structure 101 with a high energy conversion rate for the wavelength of the incident radiation may increase the absorption rate of the incident radiation by the micro-nano structure 101. Alternatively, the incident radiation comprises radiation in the infrared band.
In an alternative embodiment, micro-nano structure 101 is divided into four quadrants by a first cross-section and a second cross-section; the shape of the micro-nano structure 10 in either quadrant is projected on the first cross-section identically to the projection on the second cross-section; the shape in any quadrant symmetrically forms the shape of the micro-nano structure 101 along the first section and the second section respectively; the first section and the second section are perpendicular, and the first section and the second section intersect to obtain a height axis of the micro-nano structure 101. This shape leaves the result of the modulation of the incident radiation by the micro-nano structure 101 unaffected by the polarization state of the incident radiation. Preferably, the material of the micro-nano structure 101 includes at least one of crystalline silicon and crystalline germanium. Advantageously, the material of the absorption layer 100 comprises at least one of crystalline silicon and crystalline germanium.
Further, the bridge deck of the micro-bridge structure provided by the embodiment of the application includes a single-layer bridge deck, a double-layer bridge deck and a multi-layer bridge deck, and as long as the micro-nano structure 101 is arranged on the light receiving side of the absorption layer 100, the absorption of the incident radiation can be improved. The absorption layer 100 and the thermosensitive layer 200 of the single-layer bridge deck micro-bridge structure are positioned on the same deck; the absorber layer 100 and the thermosensitive layer 200 of the dual-layer or multi-layer bridge deck microbridge structure are located on different bridge decks, respectively. The dual or multi-deck avoids simultaneous temperature rise of the absorber layer 100 and the thermosensitive layer 200 by providing the absorber layer 100 and the thermosensitive layer 200 on different decks, resulting in reduced performance of the thermosensitive layer 200. Optionally, the micro-bridge structure of the embodiment of the present application is a double-layer micro-bridge structure.
For example, the absorption layer 100 includes a light receiving layer 102 and a supporting layer 103. Wherein the supporting layer 103 is used for supporting the light receiving layer 102 so that the distance between the light receiving layer 103 and the thermosensitive layer 200 is greater than zero; the micro-nano structure 101 is located at a side of the light receiving layer 102 away from the supporting layer 103.
Preferably, as shown in fig. 3, the absorbent layer 100 in the embodiment of the present application has an umbrella-shaped structure, where the supporting layer 103 is located on the surface of the thermosensitive layer 200 near the center; the light receiving layer 102 covers the bridge floor of the micro-bridge structure. The umbrella-shaped structure is a double-layer micro-bridge structure, the absorption layer and the thermosensitive layer are not on the same plane, the heat transfer between the absorption layer and the thermosensitive layer is reduced by reducing the duty ratio of bridge legs, the simultaneous temperature rise of the absorption layer and the thermosensitive layer is avoided, and the performance of the micro-bridge structure is improved. Compared with a single-layer micro-bridge structure, the bridge legs of the umbrella-shaped structure have small duty ratio and the bridge deck has large duty ratio, namely the filling coefficient of the absorption layer is large. Compared with a multilayer micro-bridge structure, the umbrella-shaped structure has the advantages of simple structure and low design and processing difficulty.
In an alternative embodiment, as shown in fig. 1, the micro-nano structure 101 provided in the embodiment of the present application has a height not exceeding the light receiving surface of the absorption layer 100, and may be obtained by, for example, direct photolithography on the absorption layer 100. At this time, the micro-nano structure 101 and the absorbing layer 100 have the same optical performance and thermal conductivity, the design difficulty is low, and the processing steps are simple. In yet another alternative embodiment, as shown in fig. 2, the micro-nano structure 101 provided by the embodiment of the present application may be obtained by growing on the surface of the absorption layer 100 through a semiconductor process. At this time, the micro-nano structure 101 and the absorbing layer 100 have different optical properties and thermal conductivity, the micro-nano structure 101 has high design freedom, and the modulation of the micro-nano structure 101 to the incident radiation can be enhanced by more flexible design.
In an embodiment of the present application, alternatively, as shown in fig. 4 and 5, the micro-nano structures 101 are arranged in an array in the form of super-structure units 102. The super-structure unit 102 is shaped as a close-packed pattern, and the micro-nano structure 101 stands on the center and/or the vertex of the close-packed pattern. Illustratively, the close-stackable patterns include, but are not limited to, at least one of regular triangles, squares, regular hexagons, and scallops. For example, the close-packed patterns may also be rectangular, circular, annular, etc. in shape.
In the embodiment of the present application, optionally, the periods of any two super-structure units 102 may be the same or different. For example, to reduce production costs, the period of the super-structure unit 102 near the center of the light-receiving surface is small, and the period of the super-structure unit 102 near the edge of the light-receiving surface is large. At this time, the center position of the light receiving surface has higher modulation accuracy and higher absorptivity than the edge position of the light receiving surface. It should be appreciated that the shape of any two of the super-structure units 102 may be the same or different, so long as the micro-nano structures 101 in the super-structure units 102 are capable of modulating the incident radiation, reducing the reflection and transmission of the incident radiation and thereby increasing the absorption of the incident radiation. Preferably, the period of the micro-nano structure 101 is greater than or equal to 300nm and less than or equal to 1500nm. The period of the micro-nano structure 101 may be the same or different.
The shape and feature size of the micro-nano structure 101 in embodiments of the present application affect the ability of the micro-nano structure 101 to modulate incident radiation. Illustratively, the shape of the micro-nano structure 101 in embodiments of the present application includes a cylinder, a square column, a hollow cylinder, a hollow square column, a circular ring column, and a square ring column. Fig. 6, 7 and 8 show examples of the micro-nano structure 101 as a circular square hole column, a cross-shaped column and a square round hole column, respectively. It should be understood that the shape of the micro-nano structure 101 is not limited to the above shape, for example, the micro-nano structure 101 may also be a columnar structure with a topological cross section. Further, the shape of the micro-nano structure 101 in the micro-bridge structure provided by the embodiment of the application may be all the same or may be partially the same. Preferably, the aspect ratio of the micro-nano structure 101 is less than or equal to 20.
Illustratively, fig. 9 shows the absorption ratio comparison of the micro-bridge structure with micro-nano structure 101 provided by the embodiment of the present application and the micro-bridge structure without micro-nano structure 101 in the 8 μm-12 μm band. In fig. 9, wnanostructure denotes an absorption rate of the micro-bridge structure having the micro-nano structure 101, and W/Onanostructure denotes an absorption rate of the micro-bridge structure having no micro-nano structure 101. As can be seen from FIG. 9, the absorption rate of the microbridge structure provided by the embodiment of the application to incident radiation reaches more than 95% in the 8 μm-12 μm wave band. The absorption rate of the traditional micro-bridge structure without the micro-nano structure 101 to the incident radiation is less than 80%, which is obviously lower than that provided by the embodiment of the application.
Further, as shown in fig. 3, the micro-bridge structure provided by the embodiment of the application further includes an antireflection film 800, where the antireflection film 800 is located between the absorption layer 100 and the thermosensitive layer 200. Alternatively, when the incident radiation is broad spectrum, the anti-reflection film 800 is a multi-layered film system structure, the specific structure being dependent on the wavelength of the incident radiation. Alternatively, when the incident radiation is of a single wavelength, the thickness of the anti-reflection film 800 is an odd multiple of a quarter wavelength of the incident radiation. The anti-reflection film 800 may reflect incident radiation transmitted through the absorption layer 100 back to the absorption layer 100 to interfere with the incident radiation reflected at the surface of the absorption layer 100. For incident radiation of the same wavelength, since the optical path difference of the incident radiation reflected by the antireflection film 800 and the absorption layer 100 is one half wavelength, interference of the two reflected radiation is canceled, thereby reducing the reflectivity of the absorption layer 100, and thus the absorptivity and transmissivity of the absorption layer 100 as a whole are improved.
According to the micro-bridge structure provided by the embodiment of the application, the micro-nano structure is arranged on the light receiving side of the absorption layer, so that the absorption rate of the micro-bridge structure to incident radiation is increased under the condition that the filling coefficient of the micro-bridge structure is not changed, and the absorption effect of the micro-bridge structure is improved. The embodiment of the application also reduces the contact area of the absorption layer and the thermosensitive layer through the umbrella-shaped micro-bridge structure, and avoids the influence of synchronous temperature rise of the absorption layer and the thermosensitive layer on the performance of the thermosensitive layer.
The embodiment of the application further provides a bolometer, which comprises the micro-bridge structure in any embodiment.
When the incident radiation irradiates the bolometric time, the micro-bridge structure absorbs the incident radiation through the micro-nano structure 101 and the absorption layer 100 and conducts heat to the thermosensitive layer 200. The thermosensitive layer 200 converts the received heat into an electrical signal and outputs to the electrical connection layer 300. Optionally, a gap exists between the thermosensitive layer 200 and the electrical connection layer 300 to avoid heat loss caused by heat transfer from the thermosensitive layer 200 to the electrical connection layer 300, thereby affecting the performance of the bolometer.
According to the bolometer provided by the embodiment of the application, the micro-nano structure is arranged on the light receiving side of the absorption layer, so that the absorption rate of incident radiation is improved through the micro-nano structure, and the absorption efficiency of the bolometer is further improved.
The embodiment of the application also provides a preparation method of the micro-bridge structure, which is applicable to any micro-bridge structure in the above embodiment, as shown in fig. 10, and the method at least comprises the following steps:
in step S1, the thermosensitive layer 200 is disposed on one side of the electrical connection layer 300.
In step S2, the first clad layer 400 is coated on the side of the electrical connection layer 300 where the thermosensitive layer 200 is provided.
Step S3, exposing the first inverse structure 401 on the first cladding layer 400; the first inverse structure 401 at least partially exposes the thermosensitive layer 200.
In step S4, the absorption layer 100 is formed on the exposed surface of the thermosensitive layer 200 by using the first inverse structure 401, so that the absorption layer 100 covers the bridge deck of the micro-bridge structure.
In step S5, the first cladding layer 400 is removed, resulting in the absorber layer 100.
In step S6, the micro-nano structure 101 is formed on the light receiving side of the absorption layer 100.
Further, as shown in fig. 11, forming the micro-nano structure 101 on the light receiving side of the absorption layer 100 includes the following steps:
In step S601a, the second clad layer 500 is applied to the light receiving side of the absorption layer 100.
In step S602a, a second inverse structure 501 is exposed on the second cladding layer 500.
In step S603a, the third reflective structure 502 is etched through the second reflective structure 501 in the absorber layer 100.
In step S604a, the second cladding layer 500 is removed, and the absorption layer 100 remains as the micro-nano structure 101.
Further, as shown in fig. 12, forming the micro-nano structure 101 on the light receiving side of the absorption layer 100 includes:
In step S601b, the structural layer 600 is formed on the light receiving side of the absorption layer 100. Illustratively, the structural layer 600 is formed by deposition.
In step S602b, a third coating 700 is applied to the side of the structural layer 600 remote from the absorbent layer 100.
In step S603b, a third reflective structure 701 is exposed on the third cladding layer 700.
In step S604b, a fourth inverse structure 702 is exposed on the structural layer 600 through the third inverse structure 701.
In step S605, the third cladding layer 700 is removed, and the structure of the structural layer 600 remains as the micro-nano structure 101.
It should be noted that the coating layer used in any of the above embodiments is a photoresist or a mask. Preferably, the absorption layer 100 in the method for manufacturing a micro-bridge structure according to any of the above embodiments is an umbrella-shaped structure.
In summary, according to the microbridge structure and the preparation method thereof provided by the embodiment of the application, by arranging the micro-nano structure on the light receiving side of the absorption layer, the absorption rate of the microbridge structure to incident radiation is increased without changing the filling coefficient of the microbridge structure, and the absorption effect of the microbridge structure is improved. The embodiment of the application also reduces the contact area of the absorption layer and the thermosensitive layer through the umbrella-shaped micro-bridge structure, and avoids the influence of synchronous temperature rise of the absorption layer and the thermosensitive layer on the performance of the thermosensitive layer.
The foregoing is merely a specific implementation of the embodiment of the present application, but the protection scope of the embodiment of the present application is not limited thereto, and any person skilled in the art can easily think about changes or substitutions within the technical scope of the embodiment of the present application, and the changes or substitutions are covered by the protection scope of the embodiment of the present application. Therefore, the protection scope of the embodiments of the present application shall be subject to the protection scope of the claims.
Claims (24)
1. A microbridge structure characterized in that it comprises an absorbing layer (100), a thermosensitive layer (200) and an electrical connection layer (300);
wherein the absorption layer (100), the thermosensitive layer (200) and the electrical connection layer (300) are sequentially arranged along an incident direction of incident radiation;
The absorption layer (100) comprises a light receiving layer (103) and a supporting layer (104); the supporting layer (104) is used for supporting the light receiving layer (103) so that the distance between the light receiving layer (103) and the thermosensitive layer (200) is larger than zero; the supporting layer (104) is positioned at the center of the surface of the thermosensitive layer (200);
A micro-nano structure (101) is arranged on one side of the absorption layer (100) facing to incident radiation, the micro-nano structure (101) is of a sub-wavelength structure, and the micro-nano structure (101) is arranged in an array mode of super-structure units (102); the period of the super-structure unit (102) near the center of the light receiving surface is small, and the period of the super-structure unit (102) near the edge of the light receiving surface is large.
2. The microbridge structure according to claim 1, characterized in that the micro-nano structure (101) is divided into four quadrants by a first cross-section and a second cross-section;
The projection of the shape of the micro-nano structure (101) in any quadrant on the first section is the same as the projection on the second section;
The shape in any one of the quadrants symmetrically forms the shape of the micro-nano structure (101) along the first section and the second section respectively;
the first section and the second section are perpendicular, and the first section and the second section intersect to obtain a height axis of the micro-nano structure (101).
3. The microbridge structure according to claim 1, characterized in that the super-structure units (102) are shaped as close-packed patterns;
the micro-nano structure (101) is vertically arranged at the center and/or the vertex position of the close-packed graph.
4. A microbridge structure according to claim 3, characterized in that any two super-structure units (102) differ in shape.
5. A microbridge structure according to claim 3, characterized in that any two super-structure units (102) are identical in shape.
6. The microbridge structure according to claim 1, characterized in that the period of the micro-nano structure (101) is greater than or equal to 300nm and less than or equal to 1500nm.
7. The microbridge structure according to claim 1, characterized in that the period of any two micro-nano structures (101) is different.
8. The micro-bridge structure according to any one of claims 1-7, wherein the shape of any two of said micro-nano structures (101) in said micro-bridge structure is all the same.
9. The micro-bridge structure according to any one of claims 1-7, wherein the shape of any two of said micro-nano structures (101) in said micro-bridge structure is partly identical.
10. The microbridge structure according to any of claims 1-7, characterized in that the material of the absorbing layer (100) and the micro-nano structure (101) is the same.
11. The microbridge structure according to any of claims 1-7, characterized in that the material of the absorbing layer (100) and the micro-nano structure (101) are different.
12. The microbridge structure according to any of claims 1-7, characterized in that the aspect ratio of the micro-nano structure (101) is less than or equal to 20.
13. The microbridge structure according to any of claims 1-7, characterized in that the shape of the micro-nano structure (101) comprises a cylinder, a square column, a hollow cylinder, a hollow square column, a circular ring column and a square ring column.
14. The microbridge structure according to any of claims 1-7, characterized in that the material of the micro-nano structure (101) comprises at least one of crystalline silicon and crystalline germanium.
15. The microbridge structure according to any of claims 1-7, characterized in that the micro-nano structure (101) is located at a side of the light receiving layer (103) remote from the supporting layer (104).
16. The microbridge structure according to claim 15, characterized in that the absorbing layer (100) is an umbrella-shaped structure; the light receiving layer (103) covers the bridge deck of the micro-bridge structure.
17. The microbridge structure according to any of claims 1, 10 or 11, characterized in that the material of the absorption layer (100) comprises at least one of crystalline silicon and crystalline germanium.
18. The microbridge structure according to claim 1, characterized in that it further comprises an antireflection film (800); the anti-reflection film (800) is located between the absorption layer (100) and the thermosensitive layer (200).
19. The microbridge structure according to claim 18, characterized in that the thickness of the antireflection film (800) is an odd multiple of a quarter wavelength of the incident radiation.
20. A bolometer, characterized in that it comprises a microbridge structure according to any of claims 1-19.
21. A method for preparing a microbridge structure, which is suitable for the microbridge structure according to any one of claims 1 to 19, and comprises the steps of:
-providing the thermosensitive layer (200) on one side of the electrical connection layer (300);
coating a first coating layer (400) on one side of the electric connection layer (300) where the thermosensitive layer (200) is arranged;
exposing the first inverse structure (401) on the first cladding layer (400); the first counter structure (401) exposes at least part of the thermosensitive layer (200);
-forming the absorbing layer (100) on the exposed surface of the thermosensitive layer (200) with the first counter structure (401), such that the absorbing layer (100) covers the deck of the micro bridge structure;
-removing the first coating layer (400) to obtain the absorbent layer (100);
The micro-nano structure (101) is formed on the light receiving side of the absorption layer (100).
22. The method of manufacturing a micro-bridge structure according to claim 21, wherein said forming the micro-nano structure (101) on the light receiving side of the absorption layer (100) comprises:
coating a second coating layer (500) on the light receiving side of the absorption layer (100);
Exposing a second inverse structure (501) on the second cladding layer (500);
Etching a third inverse structure (502) located on the absorption layer (100) through the second inverse structure (501) on the absorption layer (100);
-removing the second cladding layer (500), the absorption layer (100) retaining the structure being the micro-nano structure (101).
23. The method of manufacturing a micro-bridge structure according to claim 21, wherein said forming the micro-nano structure (101) on the light receiving side of the absorption layer (100) comprises:
forming a structural layer (600) on the light receiving side of the absorption layer (100);
-applying a third coating (700) on the side of the structural layer (600) remote from the absorbent layer (100);
exposing a third reflective structure (701) on the third cladding layer (700) located on the third cladding layer (700);
Exposing a fourth inverse structure (702) on the structural layer (600) through a third inverse structure (701) located on the third cladding layer (700);
-removing the third cladding layer (700), the structure layer (600) retaining the structure being the micro-nano structure (101).
24. The method of manufacturing a micro-bridge structure according to any one of claims 21-23, wherein the absorption layer (100) is umbrella-shaped.
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| EP4004608A4 (en) | 2019-07-26 | 2023-08-30 | Metalenz, Inc. | Aperture-metasurface and hybrid refractive-metasurface imaging systems |
| US11927769B2 (en) | 2022-03-31 | 2024-03-12 | Metalenz, Inc. | Polarization sorting metasurface microlens array device |
| CN115084813B (en) * | 2022-06-28 | 2023-03-28 | 上海交通大学 | Method and system for constructing sub-wavelength-size wide-spectrum nonreciprocal emitting/absorbing device |
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