CN114107954A

CN114107954A - Atomic layer deposition equipment

Info

Publication number: CN114107954A
Application number: CN202111349943.1A
Authority: CN
Inventors: 李�灿; 曹景博
Original assignee: Hefei Sineva Intelligent Machine Co Ltd
Current assignee: Hefei Sineva Intelligent Machine Co Ltd
Priority date: 2021-11-15
Filing date: 2021-11-15
Publication date: 2022-03-01

Abstract

The application discloses atomic layer deposition equipment relates to atomic layer deposition technical field, can improve the evacuation effect of pollutant, improves film thickness's homogeneity. The atomic layer deposition equipment comprises a shell, wherein the shell surrounds a reaction cavity and is provided with an air inlet and an air outlet which are communicated with the reaction cavity. The air outlet is used for being communicated with a vacuum pump. The side wall of the reaction cavity is a curved surface. The atomic layer deposition equipment is used for carrying out atomic layer deposition.

Description

Atomic layer deposition equipment

Technical Field

The application relates to the technical field of atomic layer deposition, in particular to atomic layer deposition equipment.

Background

Atomic layer deposition is a process by which a substance is deposited as a monoatomic film on a surface. The atomic layer deposition equipment comprises a shell, wherein the shell surrounds a reaction cavity, and a substrate to be coated is placed in the reaction cavity. And in the process of carrying out atomic layer coating on the substrate, sequentially introducing a first reaction precursor and a second reaction precursor into the reaction cavity. When the second reaction precursor is introduced into the reaction cavity, the second reaction precursor reacts with the first reaction precursor adsorbed on the surface of the substrate to generate a corresponding product. And then, repeating the step of introducing the first reaction precursor and the second reaction precursor into the reaction cavity until the thickness of the formed film meets the requirement.

In practical application, before the first reaction precursor and the second reaction precursor are introduced each time, inert gas needs to be introduced into the reaction chamber for evacuation, and pollutants generated by the first precursor and the second precursor remaining in the reaction chamber are removed. However, the shell of the existing atomic layer deposition apparatus is generally a square shell, and in the process of evacuating the contaminants, the contaminants reciprocate at a 90 ° included angle of the reaction chamber to form an annular air flow, so that the contaminants remain at the included angle and cannot be discharged, resulting in poor evacuation effect of the contaminants. The residual contaminants may affect the uniformity of the thickness of the thin film formed on the surface of the substrate, so that the uniformity of the thickness of the thin film is poor.

Disclosure of Invention

The application provides an atomic layer deposition equipment can improve the evacuation effect of pollutant, improves film thickness's homogeneity.

In order to achieve the purpose, the technical scheme is as follows:

the embodiment of the application provides an atomic layer deposition equipment, including the casing, the casing encloses into the reaction chamber to be equipped with air inlet and the gas outlet with the reaction chamber intercommunication. The air outlet is used for being communicated with a vacuum pump. The side wall of the reaction cavity is a curved surface.

According to the atomic layer deposition equipment provided by the embodiment of the application, the side wall of the reaction cavity is a curved surface. Like this, at the in-process of carrying out the pollutant evacuation, the pollutant can flow along the lateral wall when flowing in the reaction chamber for the pollutant is discharged from the gas vent more easily, thereby makes the remaining pollutant in the reaction chamber reduce, makes the homogeneity of the film thickness of final formation better. Compared with the prior art, the atomic layer deposition equipment provided by the embodiment of the application has the advantages that pollutants are discharged from the exhaust port more easily, the side wall is a curved surface, annular airflow is not easy to form, the emptying effect of the pollutants is better, and the uniformity of the thickness of the film is further improved.

In addition, since the side wall enables the contaminants to be more easily discharged from the exhaust port, the time required to evacuate the contaminants is correspondingly reduced, thereby improving the efficiency of contaminant evacuation.

In some embodiments, the atomic layer deposition apparatus further comprises a baffle plate positioned within the reaction chamber and covering the exhaust port. The guide plate is provided with a guide hole which communicates the exhaust port with the reaction cavity. The aperture of one end of the diversion hole close to the reaction cavity is larger than that of one end of the diversion hole close to the exhaust port.

In some embodiments, the flow directing apertures include a first aperture segment. The aperture of the first hole section is gradually reduced along the direction of the reaction cavity pointing to the exhaust port.

In some embodiments, the deflector hole further comprises a second hole segment. One end of the second hole section is communicated with one end, far away from the reaction cavity, of the first hole section, and the other end of the second hole section is communicated with the exhaust port. The axis of the second hole section is superposed with the axis of the first hole section, and the aperture of the second hole section is equal to that of one end of the first hole section close to the exhaust port.

In some embodiments, the deflector hole further comprises a third hole segment. One end of the third hole section is communicated with one end, far away from the first hole section, of the second hole section, and the other end of the third hole section is communicated with the exhaust port. The axis of the third hole section is coincident with the axis of the second hole section, and the aperture of the third hole section is smaller than that of the second hole section.

In some embodiments, the number of the flow guide holes is multiple, and the multiple flow guide holes are arranged at intervals.

In some embodiments, the plurality of baffle holes are arranged in a plurality of rows along the first direction, and each row provides a plurality of baffle holes along the second direction. Along the first direction, the distance between the centers of two adjacent diversion holes is less than twice of the aperture of one end of each diversion hole close to the reaction cavity. Along the second direction, the distance between the centers of two adjacent diversion holes is less than twice of the aperture of one end of each diversion hole close to the reaction cavity. Wherein the first direction is perpendicular to the second direction.

In some embodiments, the diameter of the flow guide hole near one end of the reaction cavity is 5 mm-7 mm.

In some embodiments, the diameter of the flow guide hole at the end close to the exhaust port is 3 mm-5 mm.

In some embodiments, the reaction chamber has a circular shape in a cross-section perpendicular to its direction of extension.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings without creative efforts.

FIG. 1 is a block diagram of an atomic layer deposition apparatus according to an embodiment of the disclosure;

fig. 2 is a structural diagram of a baffle according to an embodiment of the present application;

FIG. 3 is a cross-sectional view taken along A-A of FIG. 1;

FIG. 4 is an enlarged view of a portion of FIG. 1 at B;

FIG. 5 is an enlarged view of a portion of FIG. 1 at C;

FIG. 6 is a flow chart of an atomic layer deposition process provided by an embodiment of the present application;

FIG. 7 is a flow chart of another atomic layer deposition process provided by an embodiment of the present application;

fig. 8 is a flowchart of another atomic layer deposition process provided in an embodiment of the present application.

Reference numerals:

a 100-atomic layer deposition device; 1-a shell; 11-a reaction chamber; 111-side walls; 12-an exhaust port; 2-a vacuum pump; 21-an exhaust line; 3-a substrate; 4-a substrate holder; 41-lap plate; 5-a deflector; 51-diversion holes; 511-a first bore section; 512-a second bore section; 513-third hole section.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the description of the present application, it is to be understood that the terms, "upper," "lower," "front," "inner," and the like, as used herein, refer to an orientation or positional relationship based on that shown in the drawings, which is for convenience and simplicity of description, and does not indicate or imply that the referenced device or element must have a particular orientation, be constructed in a particular orientation, and be operated, and thus should not be construed as limiting the present application.

The terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless otherwise specified.

It should be noted that in practical applications, due to the limitation of the precision of the device or the installation error, the absolute parallel or perpendicular effect is difficult to achieve. In the present application, the vertical, parallel or equidirectional description is not an absolute limitation condition, but means that the vertical or parallel structural arrangement can be realized within a preset error range, and a corresponding preset effect is achieved, so that the technical effect of limiting the features can be realized to the maximum extent, and the corresponding technical scheme is convenient to implement and has high feasibility.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted" and "connected" are to be understood in a broad sense, e.g. fixedly connected, detachably connected, or integrally connected. They may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art as appropriate.

In the embodiments of the present application, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.

In the embodiments of the present application, words such as "exemplary" or "for example" are used to mean serving as an example, instance, or illustration. Any embodiment or design described herein as "exemplary" or "e.g.," is not necessarily to be construed as preferred or advantageous over other embodiments or designs. Rather, use of the word "exemplary" or "such as" is intended to present concepts related in a concrete fashion.

Some embodiments of the present application provide an atomic layer deposition apparatus that can be used for atomic layer deposition. For example, the atomic layer deposition apparatus may be used for thin film packaging of an Organic Light-Emitting Diode (OLED), and a thin film is formed on a surface of the OLED by using the atomic layer deposition apparatus.

Referring to fig. 1, the atomic layer deposition apparatus 100 includes a housing 1. The casing 1 encloses a reaction chamber 11 and is provided with an inlet (not shown in fig. 1) and an outlet 12 communicating with the reaction chamber 11. The exhaust port 12 communicates with the vacuum pump 2. Under the action of the vacuum pump 2, the contaminants in the reaction chamber 11 can be discharged out of the reaction chamber 11 through the exhaust port 12. The gas inlet is used for introducing a first precursor reactant, a second precursor reactant and an inert gas required for atomic layer deposition into the reaction chamber 11. Wherein, the sidewall 111 of the reaction chamber 11 is a curved surface.

In the atomic layer deposition apparatus 100 provided in the embodiment of the present application, the sidewall 111 of the reaction chamber 11 is a curved surface. In this way, in the process of evacuating the contaminants, when the contaminants flow in the reaction chamber 11, the contaminants flow along the sidewall 111, so that the contaminants are more easily discharged from the exhaust port 12, the residual contaminants in the reaction chamber 11 are reduced, and the uniformity of the thickness of the finally formed film is better. Compared with the prior art, the atomic layer deposition equipment 100 provided by the embodiment of the application has the advantages that pollutants are more easily discharged from the exhaust port 12, the side wall 111 is a curved surface, and annular airflow is not easily formed, so that the emptying effect of the pollutants is better, and the uniformity of the thickness of a film is further improved.

In addition, since the sidewall 111 enables the contaminants to be more easily discharged from the exhaust port 12, the time required for exhausting the contaminants is reduced accordingly, thereby improving the efficiency of contaminant exhaustion.

Referring to fig. 1, a substrate 3 to be coated is placed in a reaction chamber 11 during atomic layer deposition. Then, the first reaction precursor and the second reaction precursor are sequentially introduced into the reaction chamber 11, and react on the substrate 3 to form a thin film.

It can be understood that the first reactive precursor and the second reactive precursor need to be cyclically introduced in the whole atomic layer deposition process, and the specific cycle number is determined according to the required thickness of the thin film. Naturally, before the first reaction precursor and the second reaction precursor are introduced, it is necessary to evacuate the contaminants, and an inert gas is introduced into the reaction chamber 11 to evacuate the contaminants remaining in the reaction chamber 11. As described above, the atomic layer deposition apparatus 100 provided in the embodiment of the present application has a better effect of exhausting the contaminants, and the finally formed film has a better uniformity of thickness.

When the OLED is subjected to thin film encapsulation, the service life of the OLED is affected by the uniformity of the thickness of the thin film formed on the surface of the OLED. Therefore, when the above atomic layer deposition device 100 is used to perform thin film encapsulation on an OLED, the uniformity of the thickness of a finally formed thin film on the surface of the OLED is good, and the service life of the OLED can be further prolonged.

In some embodiments, referring to fig. 2, the reaction chamber 11 is circular in cross-section perpendicular to its direction of extension. I.e. the overall shape of the reaction chamber 11 is cylindrical, and the side surface of the cylinder is the side wall 111 of the reaction chamber 11. Correspondingly, the housing 1 has a circular cross-section perpendicular to its extension. Therefore, the welding points of the shell 1 are less, the welding workload is reduced, and the tightness of the reaction chamber 11 can be ensured. In addition, since there are fewer solder bumps, there are fewer places where Electro Polishing (EP) processing and precision cleaning are required. Of course, the cross section of the reaction chamber 11 along the direction perpendicular to the extending direction thereof may also be other shapes, such as an oval shape, which can also reduce the probability of forming an annular gas flow during the pollutant evacuation process, and achieve a better pollutant evacuation effect.

The material of the housing 1 may be an aluminum alloy, specifically, AL 6061. The thickness may be 30mm to 35mm, for example, 30mm, 32mm or 35 mm. It should be noted that the material and thickness are only examples, and can be selected according to actual requirements.

In some embodiments, referring to fig. 1, the ald apparatus further comprises a baffle plate 5, wherein the baffle plate 5 is located in the reaction chamber 11 and covers the exhaust port 12. The guide plate 5 is provided with a guide hole 51, and the exhaust port 12 is communicated with the reaction cavity 11 through the guide hole 51. The aperture of the diversion hole 51 near one end of the reaction chamber 11 is larger than the aperture of the diversion hole 51 near one end of the exhaust port 12.

The guide plate 5 covers the exhaust port 12, and the guide plate 5 is provided with the guide holes 51 with different apertures at two ends, so that the flow direction of the air flow in the reaction chamber 11 can be changed. Because the aperture of the diversion hole 51 near one end of the reaction chamber 11 is larger than the aperture of the diversion hole 51 near one end of the exhaust port 12, the flow rate of the air flow at the position of the diversion hole 51 near one end of the exhaust port 12 is larger, and the flow rate of the air flow at the position of the diversion hole 51 near one end of the reaction chamber 11 is smaller. Thus, when the contaminant is exhausted, the contaminant more easily flows into the guide hole 51 from the reaction chamber 11, further flows to the exhaust port 12, and is exhausted out of the reaction chamber 11. In other embodiments, the exhaust port 12 may be directly connected to the reaction chamber 11. The contaminants flow directly to the exhaust port 12 and are exhausted from the exhaust port 12. The scheme has a simple structure and is easy to realize. Here, a solution with a deflector plate 5 is chosen.

Illustratively, the shape of the exhaust port 12 may be circular. Referring to fig. 1 and 2, the vacuum pump 2 is hermetically connected to an end of the exhaust port 12 away from the reaction chamber 11 through an exhaust line 21. The guide plate 5 covers one end of the exhaust port 12 close to the reaction chamber 11. Wherein, referring to fig. 3, the shape of guide plate 5 can be the rectangle, makes things convenient for preparation and fixed, guide plate 5 accessible bolt and casing 1 fixed connection. Of course, referring to fig. 2, the baffle 5 may have other shapes, and is not limited herein.

In some embodiments, referring to fig. 1 and 4, in order to fix the substrate 3, the atomic layer deposition apparatus 100 further includes a substrate support 4, the substrate support 4 including a bonding plate 41, and the substrate 3 fixed on the bonding plate 41.

In some embodiments, when the ald apparatus 100 includes the baffle plate 5, the diameter of the baffle hole 51 near the end of the reaction chamber 11 may be 5mm to 7 mm. For example, the aperture may be 5mm, 6mm or 7 mm. In this range, the diversion hole 51 has a large influence on the flow of the air flow in the reaction chamber 11, and the flow direction of the air flow can be changed well, so that when pollutants are exhausted, the pollutants can be better discharged from the diversion hole 51.

In some embodiments, the diameter of the diversion hole 51 near the end of the exhaust port 12 may be 3mm to 5 mm. For example, the aperture may be 3mm, 4mm or 5 mm. In this range, the air flow in the diversion hole 51 can be more easily guided to the exhaust port 12, so that when the pollutant is exhausted, the pollutant can more easily flow to the exhaust port 12 and then be exhausted from the exhaust port 12.

In some embodiments, referring to fig. 2 and 3, the number of the guiding holes 51 may be multiple, and the guiding holes 51 are spaced apart. Through setting up a plurality of water conservancy diversion holes 51 for the air current of guide plate 5 department of keeping away from gas vent 12 one side can better flow in water conservancy diversion hole 51, improves the pollutant evacuation effect. Of course, in other embodiments, the number of the diversion holes 51 may be one. For example, the diversion hole 51 is in a truncated cone shape, the aperture of the diversion hole 51 near the end of the exhaust port 12 is the same as the aperture of the exhaust port 12, and the aperture of the diversion hole 51 far from the end of the exhaust port 12 is larger than the aperture of the exhaust port 12, so that the airflow can flow into the exhaust port 12 more easily, and a better exhaust effect is achieved.

In some embodiments, referring to fig. 2 and 3, the plurality of guide holes 51 are arranged in a plurality of rows along the first direction X, and each row provides a plurality of guide holes 51 along the second direction Y. Along the first direction X, the distance between the centers of two adjacent guiding holes 51 is less than twice the aperture of one end of the guiding hole 51 close to the reaction chamber 11; the distance between the centers of two adjacent guiding holes 51 along the second direction Y is less than twice the diameter of the guiding hole 51 near the end of the reaction chamber 11. The first direction X is perpendicular to the second direction Y. A plurality of water conservancy diversion holes 51 of arranging like this, a plurality of water conservancy diversion holes 51 can mutually support, change the flow direction of air current jointly for the air current in the reaction chamber 11 enters into a plurality of water conservancy diversion holes 51 more easily, thereby when the pollutant evacuation, can improve the evacuation effect of pollutant.

As shown in fig. 3, the number of the diversion holes 51 disposed in each row may be the same. As shown in fig. 2, the number of the diversion holes 51 arranged in each row may also be different, forming the irregular shape shown in fig. 2.

It should be noted that the thickness of the baffle 5, the aperture of the diversion hole 51 near one end of the reaction chamber 11, the aperture of the diversion hole 51 near one end of the exhaust port 12, and the center distance between adjacent diversion holes 51 may affect the evacuation effect of the contaminants, and further affect the uniformity of the film thickness. Specifically, refer to tables 1 and 2 below.

Watch 1

	Test1	Test2	Test3	Test4	Test5	Test6	Test7
								Thickness of	6.5	7	7.5	8	8.5	9	9.5
Pore diameter 1	6	6	6	6	6	6	6
								Aperture 2	4	4	4	4	4	4	4
Distance between each other	10	10	10	10	10	10	10
								Non-uniformity	2.51％	1.65％	1.80％	1.09％	1.19％	1.61％	1.66％

Watch two

Wherein, the thickness in table one and table two guides the thickness of the flow plate 5, the aperture 1 guides the aperture of the flow hole 51 near one end of the reaction chamber 11, the aperture 2 guides the aperture of the flow hole 51 near one end of the exhaust port 12, the spacing refers to the center spacing of two adjacent flow guide holes 51, the non-uniformity refers to the non-uniformity of the finally generated film thickness, and the unit of the data in table one and table two is mm.

According to data in a table, the thickness of the guide plate 5 is selected to be 8mm, the aperture of the guide hole 51 close to one end of the reaction cavity 11 is selected to be 6mm, the aperture of the guide hole close to one end of the exhaust port 12 is selected to be 4mm, and the center distance between two adjacent guide holes 51 is 11 mm. It is understood that the above-mentioned aperture refers to the diameter of the pilot hole 51.

In some embodiments, referring to fig. 5, the guiding hole 51 may include a first hole segment 511, and the diameter of the first hole segment 511 is gradually reduced along the direction (from top to bottom in fig. 5) of the reaction chamber 11 (fig. 1) toward the exhaust port 12 (fig. 1). From this, along the direction of reaction chamber 11 directional gas vent 12, the velocity of flow of air current in the first hole section 511 grow gradually for the air current in the reaction chamber 11 can be easier flow direction gas vent 12, and when making the evacuation pollutant, the evacuation effect of pollutant is better.

In some embodiments, referring to fig. 5, the guiding hole 51 may further include a second hole section 512, wherein one end of the second hole section 512 is communicated with one end (the lower end of the first hole section 511 in fig. 5) of the first hole section 511 away from the reaction chamber 11 (fig. 1), and the other end is communicated with the exhaust port 12 (fig. 1). The axis of second bore section 512 coincides with the axis of first bore section 511, and the bore diameter of second bore section 512 is equal to the bore diameter of first bore section 511 at the end near exhaust port 12.

In this way, since the aperture of the second hole section 512 is relatively small, the whole diversion hole 51 can perform a good diversion function, so that the airflow in the reaction chamber 11 is guided by the diversion hole 51 to be discharged out of the reaction chamber 11. Meanwhile, in order to prevent the aperture of the diversion hole 51 near the end of the exhaust port 12 from being too small, the diversion hole 51 is divided into two sections, the aperture of the first hole section 511 is gradually reduced, so that the airflow flows into the first hole section 511 more easily, and the aperture of the second hole section 512 is kept equal to the aperture of the first hole section 511 near the end of the exhaust port 12. On the one hand, the aperture of the diversion hole 51 can not influence the air flow flowing because of undersize, and on the other hand, the air flow can also keep a faster flow velocity in the second aperture 512, thereby improving the efficiency of emptying pollutants. The axes of the first hole section 511 and the second hole section 512 are coincident, so that the first hole section 511 and the second hole section 512 can be conveniently machined while ensuring that the air flow can smoothly flow into the second hole section 512 from the first hole section 511.

In some embodiments, referring to fig. 5, the diversion hole 51 may further include a third hole section 513, wherein one end of the third hole section 513 is communicated with one end of the second hole section 512 away from the first hole section 511, and the other end is communicated with the exhaust port 12 (fig. 1). The axis of the third bore section 513 coincides with the axis of the second bore section 512 and the aperture of the third bore section 513 is smaller than the aperture of the second bore section 512.

Through setting up third hole section 513 for the continuous increase of the velocity of flow of the air current in water conservancy diversion hole 51, and then make the air current flow out from reaction chamber 11 more easily under the guide of water conservancy diversion hole 51, thereby improve the effect of pollutant evacuation.

It should be noted that although the guiding hole 51 shown in fig. 5 includes the first hole section 511, the second hole section 512, and the third hole section 513, the guiding hole 51 may have only the first hole section 511, and the first hole section 511 directly connects the reaction chamber (fig. 1) and the exhaust port 12. The diversion hole 52 may include only the first hole segment 511 and the second hole segment 512, in which case, the second hole segment 512 is communicated with the exhaust port 12, and the first hole segment 511 is communicated with the reaction chamber 11.

Below, an exemplary illustration of an atomic layer deposition method is provided. Referring to fig. 6, the method includes the steps of:

s1: and introducing a first reaction precursor.

S2: and introducing inert gas to evacuate the pollutants.

S3: and introducing a second reaction precursor.

S4: and introducing inert gas to evacuate the pollutants.

S5: if the film thickness does not meet the requirement, repeating the steps S1-S4 until the film thickness meets the requirement.

As can be seen from fig. 1 and the above steps, when performing atomic layer deposition, a first reaction precursor is first introduced into the reaction chamber 11, and the first reaction precursor is retained on the surface of the substrate 3 by chemical adsorption. Next, an inert gas is introduced into the reaction chamber 11, and the contaminants generated from the first reaction precursor are discharged from the reaction chamber 11.

Then, a second reaction precursor is introduced into the reaction chamber 11, and the second reaction precursor reacts with the first reaction precursor to generate a corresponding film. It will be appreciated that the above reaction is a self-limiting process, and that the reaction stops automatically when the first reaction precursor is completely consumed. Finally, inert gas is introduced into the reaction chamber 11 to evacuate the contaminants generated by the second reaction precursor.

After the operation is finished, if the thickness of the film meets the requirement, the deposition of the atomic layer can be stopped, and if the thickness of the film does not meet the requirement, the steps are executed again until the thickness meets the requirement. After the film thickness is satisfied, the substrate 3 can be taken out from the reaction chamber 11.

Illustratively, the substrate 3 may be an OLED, the first reactive precursor may be diethyl zinc, the inert gas may be nitrogen, and the second reactive precursor may be water.

In some embodiments, referring to fig. 7, before the first reaction precursor is introduced, the method may further include the steps of:

s6: the reaction chamber is evacuated.

S7: ar is introduced into the reaction cavity.

The steps are carried out before the first reaction precursor is introduced for the first time, so that the condition that no pollutant exists in the reaction cavity 11 can be ensured, and other reactions cannot occur after the first reaction precursor is introduced. In addition, the interior of the reaction chamber 11 may be baked before the first reaction precursor is introduced, so as to remove moisture existing in the reaction chamber 11, and keep the reaction chamber 11 in a dry state.

It should be noted that, before the first reaction precursor is introduced for the first time, the substrate 3 may be preheated, and after the substrate 3 reaches a certain temperature, the first reaction precursor is introduced.

In some embodiments, referring to fig. 8, when the film thickness meets the requirement, the method may further include the steps of:

s8: the reaction cavity is vacuumized, and the vacuum environment is kept.

After the reaction is finished, the reaction chamber 11 can be vacuumized to keep the reaction chamber in a vacuum environment, so that the interior of the reaction chamber 11 is not polluted, and the next use is facilitated.

In the description herein, particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples.

The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present application should be covered within the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.

Claims

1. The atomic layer deposition equipment is characterized by comprising a shell, wherein the shell surrounds a reaction cavity and is provided with an air inlet and an air outlet which are communicated with the reaction cavity; the air outlet is communicated with the vacuum pump; the side wall of the reaction cavity is a curved surface.

2. The atomic layer deposition apparatus according to claim 1, further comprising a baffle plate positioned within the reaction chamber and covering the exhaust port;

the guide plate is provided with a guide hole which communicates the exhaust port with the reaction cavity; the aperture of one end of the flow guide hole close to the reaction cavity is larger than that of one end of the flow guide hole close to the exhaust port.

3. The atomic layer deposition apparatus according to claim 2, wherein the flow guiding hole comprises a first hole section; the aperture of the first hole section is gradually reduced along the direction of the reaction cavity pointing to the exhaust port.

4. The atomic layer deposition apparatus according to claim 3, wherein the flow guiding hole further comprises a second hole section; one end of the second hole section is communicated with one end of the first hole section far away from the reaction cavity, and the other end of the second hole section is communicated with the exhaust port; the axis of the second hole section is superposed with the axis of the first hole section, and the aperture of the second hole section is equal to that of one end, close to the exhaust port, of the first hole section.

5. The atomic layer deposition apparatus according to claim 4, wherein the flow guiding hole further comprises a third hole section; one end of the third hole section is communicated with one end, far away from the first hole section, of the second hole section, and the other end of the third hole section is communicated with the exhaust port; the axis of the third hole section is coincident with the axis of the second hole section, and the aperture of the third hole section is smaller than that of the second hole section.

6. The atomic layer deposition apparatus according to any of claims 2 to 5, wherein the number of the flow guide holes is plural, and the plural flow guide holes are arranged at intervals.

7. The atomic layer deposition apparatus according to claim 6, wherein the plurality of flow guiding holes are arranged in a plurality of rows along the first direction, each row providing a plurality of flow guiding holes along the second direction;

along the first direction, the distance between the centers of two adjacent diversion holes is less than twice of the aperture of one end of each diversion hole close to the reaction cavity;

along the second direction, the distance between the centers of two adjacent diversion holes is less than twice of the aperture of one end of each diversion hole close to the reaction cavity;

wherein the first direction is perpendicular to the second direction.

8. The atomic layer deposition apparatus according to any of claims 2 to 5, wherein the diameter of the flow guide hole near one end of the reaction chamber is 5mm to 7 mm.

9. The atomic layer deposition apparatus according to any of claims 2 to 5, wherein the diameter of the flow guiding hole at the end close to the exhaust port is 3mm to 5 mm.

10. The atomic layer deposition apparatus according to claim 1, wherein a cross-section of the reaction chamber along a direction perpendicular to its extension is circular in shape.