CN112420474B

CN112420474B - Plasma apparatus and method of manufacturing semiconductor device

Info

Publication number: CN112420474B
Application number: CN202011245847.8A
Authority: CN
Inventors: 姜玮; 阚杰; 曹春生
Original assignee: Hua Hong Semiconductor Wuxi Co Ltd
Current assignee: Hua Hong Semiconductor Wuxi Co Ltd
Priority date: 2020-11-10
Filing date: 2020-11-10
Publication date: 2023-03-10
Anticipated expiration: 2040-11-10
Also published as: CN112420474A

Abstract

The application discloses a plasma equipment and a manufacturing method of a semiconductor device, wherein the equipment comprises: the plasma equipment comprises a cavity, a gas inlet and a gas extraction opening, wherein the cavity is provided with the gas inlet and the gas extraction opening, the gas inlet is used for introducing reaction gas when the plasma equipment works, and the gas extraction opening is connected with a gas extraction device of the plasma equipment; the interlayer is arranged in the cavity and divides the space in the cavity into a reaction chamber positioned on the interlayer and an airflow distribution adjusting layer positioned below the interlayer, at least two through holes are arranged on the interlayer and used for enabling reaction gas to pass through when the plasma equipment works, and the air suction port is positioned in the airflow distribution adjusting layer; the wafer carrying table is arranged in the reaction chamber and used for placing a wafer to be etched or deposited when the plasma equipment works. This application makes reaction gas pass through setting up the interlayer in the cavity of equipment, two at least through-holes that set up on the interlayer for reaction gas's air current distribution is more even, thereby has improved the uniformity of wafer sculpture or deposit.

Description

Plasma apparatus and method of manufacturing semiconductor device

Technical Field

The application relates to the technical field of semiconductor manufacturing, in particular to a plasma device and a manufacturing method of a semiconductor device.

Background

Plasma technology (plasma technology) plays an important role in the field of semiconductor manufacturing, and can be applied to various semiconductor processes, such as deposition (e.g., chemical vapor deposition) processes, etching processes (e.g., dry etching), and the like.

Referring to fig. 1, there is shown a schematic view of a plasma apparatus provided in the related art. As shown in fig. 1, a chamber 110 of the plasma apparatus is provided with a gas inlet 121 and a pumping port 122 for a reaction gas, and a stage 130 for placing a wafer 101 is disposed in the chamber 110, wherein the pumping port 122 is connected to a pumping device. Due to the design of the location of the rf system and the electrode system, a gas evacuation device (not shown in fig. 1) is typically disposed below the side of the chamber 110, and correspondingly, an evacuation port 122 connected to the gas evacuation device is disposed below the side of the chamber 110.

In the plasma apparatus provided in the related art, because the pumping port is disposed below the side of the chamber due to the position of the pumping device, when the plasma apparatus works, the gas flow of the reaction gas in the chamber is not uniformly distributed (the flow of the reaction gas is biased to the side of the pumping port, as shown by the dotted arrow in fig. 1), and the uniformity of the wafer etching or deposition is poor.

Disclosure of Invention

The application provides a plasma device and a manufacturing method of a semiconductor device, which can solve the problem that the uniformity is poor due to the fact that the gas flow of reaction gas is not uniformly distributed when the plasma device provided by the related technology is used for etching or depositing a wafer.

In one aspect, an embodiment of the present application provides a plasma apparatus, including:

the plasma equipment comprises a cavity, wherein the cavity is provided with an air inlet and an air extraction opening, the air inlet is used for introducing reaction gas when the plasma equipment works, and the air extraction opening is connected with an air extraction device of the plasma equipment;

the interlayer is arranged in the cavity and divides the space in the cavity into a reaction chamber positioned on the interlayer and an airflow distribution adjusting layer positioned below the interlayer, the interlayer is provided with at least two through holes, the at least two through holes are used for enabling reaction gas to pass through when the plasma equipment works, and the air exhaust port is positioned in the airflow distribution adjusting layer;

the wafer carrying table is arranged in the reaction chamber and used for placing a wafer to be etched or deposited when the plasma equipment works.

Optionally, a regulating valve is arranged in the through hole.

Optionally, the stage is an electrostatic chuck (ESC).

Optionally, the electrostatic chuck includes a chuck base and a chuck disposed on the chuck base.

Optionally, the apparatus is an etching apparatus.

Optionally, the apparatus is a deposition apparatus.

In another aspect, an embodiment of the present application provides a method for manufacturing a semiconductor device, where the method is performed by the plasma apparatus as described in any one of the above, and the method includes:

placing a wafer on a slide holder of the plasma equipment;

carrying out an etching process or a deposition process on the wafer, introducing reaction gas through a gas inlet on a cavity of the plasma equipment in the process of carrying out the etching process or the deposition process, enabling gas flow of the reaction gas to be uniformly distributed through at least two through holes on an interlayer in the cavity of the plasma equipment, and pumping out the reaction gas through a pumping hole on the cavity of the plasma equipment;

and taking out the wafer from the plasma equipment after the etching process or the deposition process is finished.

The technical scheme at least comprises the following advantages:

the interlayer is arranged in the cavity of the plasma equipment to separate the space in the cavity into the reaction chamber on the upper part and the airflow distribution adjusting layer on the lower part, and the reaction gas passes through the at least two through holes arranged on the interlayer, so that the airflow distribution of the reaction gas is more uniform, the problem of poor etching or deposition consistency caused by the uneven airflow distribution of the reaction gas when the plasma equipment provided in the related technology is used for etching or depositing the wafer is solved, and the wafer etching or deposition consistency is improved.

Drawings

In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic view of a plasma apparatus provided in the related art;

FIG. 2 is a schematic view of a plasma apparatus provided in an exemplary embodiment of the present application;

fig. 3 is a flow chart of a method for fabricating a semiconductor device according to an exemplary embodiment of the present application.

Detailed Description

The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and operate, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in this application will be understood to be a specific case for those of ordinary skill in the art.

In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.

Referring to fig. 2, there is shown a schematic view of a plasma apparatus, which may be an etching apparatus or a deposition apparatus, provided by an exemplary embodiment of the present application, as shown in fig. 2, the apparatus including:

the chamber 210 is provided with a gas inlet 221 and a gas pumping port 222, the gas inlet 221 is used for introducing a reaction gas when the plasma apparatus operates, and the gas pumping port 222 is connected with a gas pumping device of the plasma apparatus (not shown in fig. 2).

An interlayer 223 disposed in the chamber 210 to divide the space in the chamber 210 into a reaction chamber 211 located on the interlayer 223 and a gas distribution adjusting layer 212 located under the interlayer 223, wherein at least two through holes 2232 are disposed on the interlayer 223 (three through holes 2232 are exemplarily illustrated in fig. 2, two through holes may be disposed in actual implementation, or more than two through holes may be disposed), the through holes 2232 are used for allowing reaction gas to pass through when the plasma apparatus works, and the pumping hole 222 is located in the gas distribution adjusting layer 212.

Optionally, the through hole 2232 is provided with an adjusting valve 2231, and during the etching process or the deposition process, the uniformity of etching or deposition can be adjusted by controlling the opening of the adjusting valve 2231, so as to improve the uniformity of wafer etching or deposition. For example, the distribution value of the etching or deposition uniformity of the wafer can be adjusted by using the plasma equipment, so that the setting of a process menu of the equipment is optimized, and the etching or deposition uniformity of the wafer is effectively improved.

And a wafer stage 230 disposed in the reaction chamber 211 and used for placing the wafer 201 to be etched or deposited when the plasma apparatus is in operation.

Illustratively, the stage 230 can be an electrostatic chuck that includes a chuck base and a chuck disposed on the chuck base.

When the plasma apparatus is operated, since the plurality of through holes 2232 are disposed at different positions on the partition layer 230, the reaction gas can pass through the plurality of through holes 2232, rather than only the pumping port 222, so that the distribution of the flow of the reaction gas in the chamber 210 is more uniform (the flow of the reaction gas is indicated by the dotted arrows in fig. 2).

To sum up, in the embodiment of the present application, through set up the interlayer in the cavity of plasma equipment with the space separation in the cavity for being located the reaction chamber on upper portion and the air current distribution adjustment layer of lower part, make reactant gas pass through two at least through-holes that set up on the interlayer for reactant gas's air current distribution is more even, thereby solved through the plasma equipment that provides among the correlation technique and carried out the etching or deposit because reactant gas's air current distributes the poor problem of the etching or the sedimentary uniformity that leads to, improved the wafer etching or the sedimentary uniformity.

Referring to fig. 3, there is shown a flow chart of a method for fabricating a semiconductor device provided in an exemplary embodiment of the present application, the method being executable by the plasma apparatus provided in the above embodiment, the method comprising:

step 301, a wafer is placed on a slide holder of a plasma device.

And 302, performing an etching process or a deposition process on the wafer, wherein in the etching process or the deposition process, a reaction gas is introduced through a gas inlet on a cavity of the plasma equipment, the gas flow of the reaction gas is uniformly distributed through at least two through holes on an interlayer in the cavity of the plasma equipment, and the reaction gas is pumped out through a pumping hole on the cavity of the plasma equipment.

Optionally, as shown in fig. 2, a regulating valve 2231 is disposed in the through hole 2232, and during the etching process or the deposition process, the uniformity of etching or deposition can be regulated by controlling the opening of the regulating valve 2231, so as to improve the uniformity of etching or deposition of the wafer.

In step 302, after the etching process or the deposition process is completed, the wafer is removed from the plasma apparatus.

It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.

Claims

1. A plasma apparatus, comprising:

the interlayer is arranged in the cavity and divides the space in the cavity into a reaction chamber on the interlayer and an airflow distribution adjusting layer below the interlayer, at least two through holes are arranged on the interlayer, adjusting valves are arranged in the through holes, the at least two through holes are used for enabling reaction gas to pass through when the plasma equipment works, and the air suction port is arranged in the airflow distribution adjusting layer;

the slide holder, the slide holder set up in the reaction chamber, the slide holder is the static chuck, the static chuck include the chuck base with set up in chuck on the chuck base, the slide holder is used for plasma equipment during operation places the wafer that needs sculpture or deposit.

2. The apparatus of claim 1, wherein the apparatus is an etching apparatus.

3. The apparatus of claim 1, wherein the apparatus is a deposition apparatus.

4. A method of manufacturing a semiconductor device, the method being performed by the plasma apparatus of any of claims 1 to 3, the method comprising:

placing a wafer on a slide holder of the plasma equipment;