CN114093960A - Monocrystalline silicon piece texturing method capable of reducing light reflection loss - Google Patents
Monocrystalline silicon piece texturing method capable of reducing light reflection loss Download PDFInfo
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- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims abstract description 35
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims abstract description 102
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 91
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 91
- 239000010703 silicon Substances 0.000 claims abstract description 91
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims abstract description 67
- 238000004140 cleaning Methods 0.000 claims abstract description 61
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000002156 mixing Methods 0.000 claims abstract description 48
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 claims abstract description 28
- 238000005260 corrosion Methods 0.000 claims abstract description 27
- 230000007797 corrosion Effects 0.000 claims abstract description 27
- 239000000654 additive Substances 0.000 claims abstract description 18
- 230000000996 additive effect Effects 0.000 claims abstract description 18
- 150000002500 ions Chemical class 0.000 claims abstract description 14
- 229910001961 silver nitrate Inorganic materials 0.000 claims abstract description 14
- 229910052709 silver Inorganic materials 0.000 claims abstract description 9
- 239000004332 silver Substances 0.000 claims abstract description 9
- 230000002378 acidificating effect Effects 0.000 claims abstract description 8
- -1 silver ions Chemical class 0.000 claims abstract description 8
- 239000000243 solution Substances 0.000 claims abstract description 8
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 claims description 24
- 239000003513 alkali Substances 0.000 claims description 18
- 239000002253 acid Substances 0.000 claims description 14
- 238000005406 washing Methods 0.000 claims description 14
- 238000000992 sputter etching Methods 0.000 claims description 8
- 239000002585 base Substances 0.000 claims description 6
- 235000012431 wafers Nutrition 0.000 description 72
- 238000002310 reflectometry Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 238000012360 testing method Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001768 cations Chemical class 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001579 optical reflectometry Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000011112 process operation Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- H01L31/02—Details
- H01L31/0236—Special surface textures
- H01L31/02363—Special surface textures of the semiconductor body itself, e.g. textured active layers
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Abstract
The invention discloses a monocrystalline silicon piece texturing method for reducing light reflection loss, which comprises the following steps: (1) mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution A, and cleaning a silicon wafer in the solution A to remove surface dirt; (2) mixing a potassium hydroxide solution with a texturing additive to obtain a solution B, and corroding the silicon wafer in the solution B to form a pyramid textured surface; (3) mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution C, and cleaning the silicon wafer in the solution C to remove surface residues; (4) mixing HF and HCl to obtain a solution D, and continuously removing surface residues of a silicon wafer in the solution D to create an acidic environment; (5) mixing a silver nitrate solution, hydrofluoric acid and hydrogen peroxide to obtain a solution E, and performing ion corrosion on the silicon wafer in the solution E to form a nano-scale pit on the surface of the pyramid; (6) and mixing the potassium hydroxide solution with hydrogen peroxide to obtain a solution F, and placing the silicon wafer in the solution F to remove residues and redundant silver ions on the surface of the silicon wafer, so that the condition that Rs is too low is avoided.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a monocrystalline silicon piece texturing method capable of reducing light reflection loss.
Background
In the process of manufacturing a monocrystalline silicon cell, a pyramid light trapping structure is formed on the surface of an original silicon wafer through groove type wet texturing, and light is secondarily reflected on the surface of a pyramid, so that the light absorption rate of the silicon wafer is increased, the reflectivity is reduced, and the current density and the photoelectric conversion efficiency of the cell are improved.
The texture structure of the conventional monocrystalline silicon wafer is that pyramids with different sizes are closely arranged and are fully distributed on the surface of the silicon wafer, the textures with different pyramids have different optical characteristics and electrical characteristics, generally speaking, the reflectivity of the silicon wafer with the large pyramid size is higher, and the short-circuit current of the battery piece is smaller; on the contrary, the reflectivity of the silicon wafer with small pyramid size is low, and the short-circuit current of the prepared battery piece is high. However, silicon wafers with small pyramid sizes have other problems: for example, when the conductive grid line is subjected to screen printing, the contact between the small pyramid suede and the conductive grid line is insufficient, so that the grid is broken, and in addition, the welding tension of the grid line is reduced.
Disclosure of Invention
Aiming at the problems in the prior art, the invention provides a monocrystalline silicon piece texturing method capable of reducing light reflection loss.
The invention is realized by the following technical scheme:
a monocrystalline silicon piece texturing method for reducing light reflection loss is characterized by comprising the following steps:
(1) pre-cleaning: mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution A, and putting a silicon wafer into the solution A for cleaning to remove dirt on the surface of the silicon wafer;
(2) alkali texturing: mixing a potassium hydroxide solution with a texturing additive to obtain a solution B, and placing the silicon wafer subjected to the previous cleaning procedure in the solution B for anisotropic corrosion to form a pyramid textured surface;
(3) post-cleaning: mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution C, and cleaning the textured silicon wafer in the solution C to remove residues on the surface of the silicon wafer;
(4) acid washing: mixing hydrofluoric acid and hydrochloric acid to obtain a solution D, placing the silicon wafer subjected to the post-cleaning procedure in the solution D, continuously removing residues on the surface of the silicon wafer, and creating an acidic environment;
(5) ion etching: mixing a silver nitrate solution, hydrofluoric acid and hydrogen peroxide to obtain a solution E, placing the silicon wafer after acid cleaning in the solution E for ion corrosion, and forming a nano-scale pit on the surface of the pyramid;
(6) alkali washing: mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution F, placing the silicon wafer subjected to ion corrosion in the solution F again, removing residues and redundant silver ions on the surface of the silicon wafer, and avoiding the phenomenon that Rs is too low.
Specifically, the monocrystalline silicon piece texturing method capable of reducing light reflection loss sequentially uses conventional monocrystalline alkali texturing and metal cation corrosion modes to texture monocrystalline silicon pieces, and can prepare pyramid units covered with nanoscale pits on pyramids formed by alkali texturing by sequentially using two different modes to texture, so that the light receiving surface of a crystalline silicon cell is effectively increased, and the purpose of synergy is achieved.
Further, the monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following steps: cleaning before the step (1): mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution A, and putting a silicon wafer into the solution A for cleaning to remove dirt on the surface of the silicon wafer; the concentration of the potassium hydroxide solution used in the step is 0.1-0.5 wt%, and the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: (10-15), the cleaning time is 120-150 seconds, and the temperature during cleaning is 50-70 ℃. And (3) placing the monocrystalline silicon wafer into the solution A for cleaning before the monocrystalline silicon wafer is placed into the solution A to remove particles and organic impurities on the surface of the silicon wafer.
Further, the monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following steps: step (2), alkali texturing: mixing a potassium hydroxide solution with a texturing additive to obtain a solution B, and placing the silicon wafer subjected to the previous cleaning procedure in the solution B for anisotropic corrosion to form a pyramid textured surface; the concentration of the potassium hydroxide in the solution B is 2.0-3.0 wt%, and the solubility of the texturing additive is 1.0-2.0 wt%; the length of the diagonal line of the base of the formed pyramid is 3-5 μm. And a large pyramid texture surface can be formed on the surface of the silicon wafer through alkali texturing.
Further, the monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following steps: the texturing additive is a non-alcohol type monocrystalline silicon texturing additive. The non-alcohol type monocrystalline silicon texturing additive is produced by Tuobang technology.
Further, the monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following steps: cleaning after the step (3): mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution C, and cleaning the textured silicon wafer in the solution C to remove residues on the surface of the silicon wafer; in the step, the concentration of the potassium hydroxide solution is 0.1-0.5 wt%, and the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: (10-15), the cleaning time is 100-120 seconds, and the temperature during cleaning is 60-70 ℃.
Further, the monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following steps: acid washing in step (4): mixing hydrofluoric acid and a hydrochloric acid solution to obtain a solution D, placing the silicon wafer subjected to the post-cleaning procedure in the solution D, continuously removing residues on the surface of the silicon wafer, and creating an acidic environment; the concentration of hydrofluoric acid in the solution D is 2-4 wt%, and the concentration of hydrochloric acid is 1-3 wt%.
Further, the monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following steps: step (5), ion etching: mixing a silver nitrate solution, hydrofluoric acid and hydrogen peroxide to obtain a solution E, placing the silicon wafer after acid cleaning in the solution E for ion corrosion, and forming a nano-scale pit on the surface of the pyramid; the concentration of silver nitrate in the solution E is 0.2-0.3mol/L, the concentration of hydrofluoric acid is 3.0-5.0mol/L, and the concentration of hydrogen peroxide is 0.5-0.8 mol/L; the diameter of the formed pit is 100-500 nm. According to the invention, the nano-scale pits with the light trapping effect are formed on the surface of the pyramid by adopting a metal-assisted chemical corrosion mode, so that the low light reflectivity is reduced, and the battery efficiency is improved.
Further, the monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following steps: alkali washing in step (6): mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution F, placing the silicon wafer subjected to ion corrosion in the solution F again, and removing residues and redundant silver ions on the surface of the silicon wafer; the concentration of the potassium hydroxide solution used in the step is 1.0-1.5 wt%, and the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: (5-10).
Specifically, the monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following steps: firstly, cleaning an original silicon wafer by a solution A, then carrying out anisotropic corrosion by a solution B to obtain a large pyramid suede, and then carrying out ion corrosion by a solution E to form nano-level pits on the original large pyramid suede so as to form pyramid units covered with the nano-level pits. The pyramid unit comprises a large pyramid with larger size, the surface of the large pyramid is covered with nano-scale pits, the diagonal length of the base of the large pyramid is 3-5 microns, and the number of the pits contained in the pyramid unit is 5-500.
The invention has the beneficial effects that:
(1) according to the monocrystalline silicon piece texturing method for reducing light reflection loss, provided by the invention, on the basis of traditional monocrystalline alkali texturing, a silver nitrate solution is introduced for ion corrosion, and nano-level pits are formed on the surface of a pyramid, so that the light reflection loss is reduced. According to the texturing method provided by the invention, the nano-scale pits are obtained on the pyramid surface and are overlapped, so that the monocrystalline silicon wafer has the advantages of good contact between the large pyramid and the conductive silver grid and high welding tension, and has the advantages of low reflectivity and high short-circuit current due to the existence of the nano-scale pits; the texturing silicon wafer prepared by the method has lower reflectivity; before depositing a silicon nitride film on a silicon chip, hydrogen passivation can be adopted to passivate dangling bonds to form Si-H, surface recombination is reduced, short-circuit current is improved, and conversion efficiency is improved.
(2) The texture surface of the monocrystalline silicon wafer prepared by the method is a pyramid unit covered with the nano-scale pits, and has the advantages of good contact between a large pyramid and a conductive grid line, high welding tension, low reflectivity and high short-circuit current; compared with the battery piece manufactured by the conventional large textured silicon wafer or small textured silicon wafer, the battery piece manufactured by the monocrystalline silicon wafer with the pyramid unit covered with the nano-scale pits has the advantages that the conversion efficiency of the battery piece can be improved, and the welding reliability is better.
(3) The monocrystalline silicon piece texturing method for reducing light reflection loss is simple in process operation, easy to implement and suitable for large-scale production.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is an electron microscope image of a pyramid unit formed in example 1 of the present invention.
In the figure: 1 pyramid, 2 nanometer level pits.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. The following description of at least one exemplary embodiment is merely illustrative in nature and is in no way intended to limit the invention, its application, or uses. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1
A monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following specific steps:
(1) pre-cleaning: mixing 0.3 wt% potassium hydroxide solution with hydrogen peroxide to obtain solution A, placing a silicon wafer in the solution A, and cleaning at 65 ℃ for 150 seconds to remove surface stains of the silicon wafer; wherein the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: 10;
(2) alkali texturing: mixing a potassium hydroxide solution with an alcohol-free monocrystalline silicon texturing additive purchased from Tuobang science and technology to obtain a solution B, and placing the silicon wafer subjected to the previous cleaning procedure in the solution B for anisotropic corrosion to form a pyramid textured surface; wherein the concentration of the potassium hydroxide in the solution B is 2.0 wt%, the solubility of the texturing additive is 1.0 wt%, and the diagonal length of the base of the formed pyramid is 5 mu m;
(3) post-cleaning: mixing 0.3 wt% potassium hydroxide solution with hydrogen peroxide to obtain solution C, placing the textured silicon wafer in the solution C, cleaning at 65 ℃ for 100 seconds, and removing residues on the surface of the silicon wafer; wherein the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: 10;
(4) acid washing: mixing hydrofluoric acid and a hydrochloric acid solution to obtain a solution D, placing the silicon wafer subjected to the post-cleaning procedure in the solution D, continuously removing residues on the surface of the silicon wafer, and creating an acidic environment; wherein the concentration of hydrofluoric acid in the solution D is 2.95 wt%, and the concentration of hydrochloric acid is 1.82 wt%;
(5) ion etching: mixing a silver nitrate solution, hydrofluoric acid and hydrogen peroxide to obtain a solution E, placing the silicon wafer after acid cleaning in the solution E for longitudinal selective corrosion, forming a nano-scale pit on the surface of a pyramid, and forming a pyramid unit on the surface of the silicon wafer (as shown in figure 1); the concentration of silver nitrate in the solution E is 0.3mol/L, the concentration of hydrofluoric acid is 5.0mol/L, the concentration of hydrogen peroxide is 0.8mol/L, and the diameter of a formed pit is 500 nm;
(6) alkali washing: mixing a potassium hydroxide solution with the concentration of 1.3 wt% with hydrogen peroxide to obtain a solution F, placing the silicon wafer subjected to ion corrosion in the solution F again, and removing residues and redundant silver ions on the surface of the silicon wafer; the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: 8.
example 2
A monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following specific steps:
(1) pre-cleaning: mixing 0.1 wt% potassium hydroxide solution with hydrogen peroxide to obtain solution A, placing a silicon wafer in the solution A, and cleaning at 50 ℃ for 130 seconds to remove surface stains of the silicon wafer; wherein the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: 15;
(2) alkali texturing: mixing a potassium hydroxide solution with an alcohol-free monocrystalline silicon texturing additive to obtain a solution B, and placing the silicon wafer subjected to the previous cleaning procedure in the solution B for anisotropic corrosion to form a pyramid textured surface; wherein the concentration of the potassium hydroxide in the solution B is 3.0 wt%, the solubility of the texturing additive is 2.0 wt%, and the diagonal length of the base of the formed pyramid is 2 mu m;
(3) post-cleaning: mixing 0.4 wt% potassium hydroxide solution with hydrogen peroxide to obtain solution C, placing the textured silicon wafer in the solution C, cleaning at 60 ℃ for 120 seconds, and removing residues on the surface of the silicon wafer; wherein the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: 12;
(4) acid washing: mixing hydrofluoric acid and a hydrochloric acid solution to obtain a solution D, placing the silicon wafer subjected to the post-cleaning procedure in the solution D, continuously removing residues on the surface of the silicon wafer, and creating an acidic environment; wherein the concentration of hydrofluoric acid in the solution D is 3.85 wt%, and the concentration of hydrochloric acid is 1.20 wt%;
(5) ion etching: mixing a silver nitrate solution, hydrofluoric acid and hydrogen peroxide to obtain a solution E, placing the silicon wafer after acid cleaning in the solution E for longitudinal selective corrosion, and forming a nano-scale pit on the surface of the pyramid; the concentration of silver nitrate in the solution E is 0.2mol/L, the concentration of hydrofluoric acid is 3.0mol/L, the concentration of hydrogen peroxide is 0.6mol/L, and the diameter of a formed pit is 300 nm;
(6) alkali washing: mixing a potassium hydroxide solution with the concentration of 1.5 wt% with hydrogen peroxide to obtain a solution F, placing the silicon wafer subjected to ion corrosion in the solution F again, and removing residues and redundant silver ions on the surface of the silicon wafer; the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: 6.
example 3
A monocrystalline silicon piece texturing method for reducing light reflection loss comprises the following specific steps:
(1) pre-cleaning: mixing 0.5 wt% potassium hydroxide solution with hydrogen peroxide to obtain solution A, placing a silicon wafer in the solution A, and cleaning at 55 ℃ for 120 seconds to remove surface stains of the silicon wafer; wherein the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: 13;
(2) alkali texturing: mixing a potassium hydroxide solution with an alcohol-free monocrystalline silicon texturing additive to obtain a solution B, and placing the silicon wafer subjected to the previous cleaning procedure in the solution B for anisotropic corrosion to form a pyramid textured surface; wherein the concentration of the potassium hydroxide in the solution B is 2.5 wt%, the solubility of the texturing additive is 1.5 wt%, and the diagonal length of the base of the formed pyramid is 3.5 mu m;
(3) post-cleaning: mixing 0.2 wt% potassium hydroxide solution with hydrogen peroxide to obtain solution C, placing the textured silicon wafer into the solution C, cleaning at 65 ℃ for 110 seconds, and removing residues on the surface of the silicon wafer;
(4) acid washing: mixing hydrofluoric acid and a hydrochloric acid solution to obtain a solution D, placing the silicon wafer subjected to the post-cleaning procedure in the solution D, continuously removing residues on the surface of the silicon wafer, and creating an acidic environment; wherein the concentration of hydrofluoric acid in the solution D is 2.25 wt%, and the concentration of hydrochloric acid is 2.55 wt%;
(5) ion etching: mixing a silver nitrate solution, hydrofluoric acid and hydrogen peroxide to obtain a solution E, placing the silicon wafer after acid cleaning in the solution E for longitudinal selective corrosion, and forming a nano-scale pit on the surface of the pyramid; the concentration of silver nitrate in the solution E is 0.25mol/L, the concentration of hydrofluoric acid is 4.0mol/L, the concentration of hydrogen peroxide is 0.7mol/L, and the diameter of a formed pit is 400 nm;
(6) alkali washing: mixing a potassium hydroxide solution with the concentration of 1.1 wt% with hydrogen peroxide to obtain a solution F, placing the silicon wafer subjected to ion corrosion in the solution F again, and removing residues and redundant silver ions on the surface of the silicon wafer; the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: 10.
comparative example 1
Comparative example 1 is different from example 1 in that comparative example 1 does not perform the ion etching process of step (5), and the remaining preparation conditions are the same as those of example 1.
And (3) testing: the single-crystal silicon wafers of the pyramid units covered with the nano-scale pits prepared in examples 1 to 3 and the textured single-crystal silicon wafer prepared in comparative example 1 were tested for light reflectance, current, and cell efficiency, and the test results are shown in table 1:
table 1 shows the results of the reflectivity and cell efficiency tests of examples 1 to 3 and comparative example 1
| Reflectance (%) | Current (A) | Efficiency (%) | |
| Example 1 | 10.32％ | 12.15 | 23.16 |
| Example 2 | 9.98％ | 12.41 | 23.25 |
| Example 3 | 10.56％ | 12.23 | 23.2 |
| Comparative example 1 | 11.85％ | 11.37 | 22.36 |
It can be seen from the test data of table 1 above that the single crystal silicon wafer cells treated by the texturing method of the present invention are effectively improved in the properties of reflectivity, current and cell efficiency, compared to the conventional texturing method (comparative example 1).
The above-mentioned preferred embodiments of the present invention are provided for illustration only and not for the purpose of limiting the invention. Obvious variations or modifications of the present invention are within the scope of the present invention.
Claims (8)
1. A monocrystalline silicon piece texturing method for reducing light reflection loss is characterized by comprising the following steps:
(1) pre-cleaning: mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution A, and putting a silicon wafer into the solution A for cleaning to remove dirt on the surface of the silicon wafer;
(2) alkali texturing: mixing a potassium hydroxide solution with a texturing additive to obtain a solution B, and placing the silicon wafer subjected to the previous cleaning procedure in the solution B for anisotropic corrosion to form a pyramid textured surface;
(3) post-cleaning: mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution C, and cleaning the textured silicon wafer in the solution C to remove residues on the surface of the silicon wafer;
(4) acid washing: mixing hydrofluoric acid and hydrochloric acid to obtain a solution D, placing the silicon wafer subjected to the post-cleaning procedure in the solution D, continuously removing residues on the surface of the silicon wafer, and creating an acidic environment;
(5) ion etching: mixing a silver nitrate solution, hydrofluoric acid and hydrogen peroxide to obtain a solution E, placing the silicon wafer after acid cleaning in the solution E for ion corrosion, and forming a nano-scale pit on the surface of the pyramid;
(6) alkali washing: mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution F, placing the silicon wafer subjected to ion corrosion in the solution F again, and removing residues and redundant silver ions on the surface of the silicon wafer.
2. A method for texturing a monocrystalline silicon wafer with reduced light reflection loss according to claim 1, characterized in that the cleaning before the step (1): mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution A, and putting a silicon wafer into the solution A for cleaning to remove dirt on the surface of the silicon wafer; the concentration of the potassium hydroxide solution used in the step is 0.1-0.5 wt%, and the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: (10-15), the cleaning time is 120-150 seconds, and the temperature during cleaning is 50-70 ℃.
3. A method for texturing a single crystal silicon wafer to reduce light reflection loss according to claim 1, wherein the step (2) of alkali texturing: mixing a potassium hydroxide solution with a texturing additive to obtain a solution B, and placing the silicon wafer subjected to the previous cleaning procedure in the solution B for anisotropic corrosion to form a pyramid textured surface; the concentration of the potassium hydroxide in the solution B is 2.0-3.0 wt%, and the solubility of the texturing additive is 1.0-2.0 wt%; the length of the diagonal line of the base of the formed pyramid is 3-5 μm.
4. The method of claim 3, wherein the texturing additive is an alcohol-free single crystal silicon texturing additive.
5. A method for texturing a single crystal silicon wafer with reduced light reflection loss according to claim 1, wherein after the step (3) cleaning: mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution C, and cleaning the textured silicon wafer in the solution C to remove residues on the surface of the silicon wafer; in the step, the concentration of the potassium hydroxide solution is 0.1-0.5 wt%, and the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: (10-15), the cleaning time is 100-120 seconds, and the temperature during cleaning is 60-70 ℃.
6. The method for texturing a single crystal silicon wafer to reduce light reflection loss according to claim 1, wherein the step (4) of acid washing: mixing hydrofluoric acid and hydrochloric acid to obtain a solution D, placing the silicon wafer subjected to the post-cleaning procedure in the solution D, continuously removing residues on the surface of the silicon wafer, and creating an acidic environment; the concentration of hydrofluoric acid in the solution D is 2-4 wt%, and the concentration of hydrochloric acid is 1-3 wt%.
7. A method for texturing a single crystal silicon wafer with reduced light reflection loss according to claim 1, wherein the step (5) comprises ion etching: mixing a silver nitrate solution, hydrofluoric acid and hydrogen peroxide to obtain a solution E, placing the silicon wafer after acid cleaning in the solution E for ion corrosion, and forming a nano-scale pit on the surface of the pyramid; the concentration of silver nitrate in the solution E is 0.2-0.3mol/L, the concentration of hydrofluoric acid is 3.0-5.0mol/L, and the concentration of hydrogen peroxide is 0.5-0.8 mol/L; the diameter of the formed pit is 100-500 nm.
8. The method for texturing a monocrystalline silicon wafer with reduced light reflection loss according to claim 1, wherein the step (6) comprises alkali washing: mixing a potassium hydroxide solution with hydrogen peroxide to obtain a solution F, placing the silicon wafer subjected to ion corrosion in the solution F again, and removing residues and redundant silver ions on the surface of the silicon wafer; the concentration of the potassium hydroxide solution used in the step is 1.0-1.5 wt%, and the volume ratio of the potassium hydroxide solution to the hydrogen peroxide is 1: (5-10).
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