CN114083430B - Effective method for accurately obtaining upper and lower surface removal amount in double-sided grinding of wafer - Google Patents
Effective method for accurately obtaining upper and lower surface removal amount in double-sided grinding of wafer Download PDFInfo
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- CN114083430B CN114083430B CN202111330294.0A CN202111330294A CN114083430B CN 114083430 B CN114083430 B CN 114083430B CN 202111330294 A CN202111330294 A CN 202111330294A CN 114083430 B CN114083430 B CN 114083430B
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 235000012431 wafers Nutrition 0.000 claims description 68
- 239000007788 liquid Substances 0.000 claims description 10
- 238000005498 polishing Methods 0.000 claims description 9
- 239000013078 crystal Substances 0.000 abstract description 9
- 230000001360 synchronised effect Effects 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000005259 measurement Methods 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 description 8
- 238000002360 preparation method Methods 0.000 description 4
- 238000004364 calculation method Methods 0.000 description 3
- 238000005452 bending Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/08—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for double side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Grinding Of Cylindrical And Plane Surfaces (AREA)
Abstract
The invention provides an effective method for accurately obtaining the upper and lower surface removal amount in double-sided grinding of a wafer, belonging to the crystal processing technology. The invention uses synchronous grinding of the inclined section wafer and the normal wafer, measures the length values of the upper and lower sides of the inclined section after finishing grinding, and compares and calculates the length values of the upper and lower sides of the inclined section before grinding to accurately obtain the removal amount of the upper and lower sides of the wafer. The method has simple process, easy operation and accurate and reliable measurement.
Description
Technical Field
The invention relates to a wafer processing method, in particular to a method for determining the upper and lower removal amount in double-sided grinding of a wafer.
Background
In the field of semiconductors and integrated circuits, the preparation of a substrate slice, i.e. a wafer, belongs to the upstream end of industry, and the conventional preparation process comprises the preparation of a bulk crystal, wherein the bulk crystal is formed into a sheet-shaped cutting slice by a cutting technology, the cutting slice is removed to be close to a target thickness value by double-sided grinding, and the standard substrate slice product is finally formed by processes of precision mechanical polishing, chemical mechanical polishing and the like. Can be used for epitaxial preparation of the subsequent process. The epitaxial process has strict requirements on the substrate slice, including the surface processing quality of the substrate slice, no processing defects and no damage to the layer; the appearance processing quality of the substrate slice comprises uniformity of slice thickness, bending and warping degree of the substrate slice and the like, namely, the flatness is good.
The conventional crystal cutting technology is a common high-efficiency cutting method, and the method can cut tens to hundreds of pieces at a time, but has different cutting difficulties due to different hardness of crystals, and has large cutting difficulty for crystals with larger hardness, large piece thickness difference of crystal cutting pieces, obvious cutting line marks and large bending and warping degrees of the cutting pieces. The great difficulty of cutting makes the thickness setting of the cut piece far greater than the target processing thickness of the substrate piece, so that the qualified substrate piece can be obtained through the processing of the subsequent process. Such a cut sheet also gives a large processing amount to the subsequent double-side grinding process.
In the double-sided grinding process, a plurality of corresponding free star wheels are firstly placed on double-sided grinding equipment, cutting sheets are placed in large holes of the free star wheels, the diameter of the large holes is slightly larger than that of the cutting sheets, the free star wheels are clamped by upper and lower grinding discs, a plurality of liquid injection holes are formed in the upper disc, grinding liquid is continuously injected into the liquid injection holes in the grinding process, the upper and lower grinding discs rotate relatively, and the cutting sheets are ground through the relative movement of the grinding discs, the grinding liquid and the cutting sheets. In order to increase the grinding efficiency, the pressure can be increased on the upper grinding disc, the rotating speed of the lower grinding disc, the rotating speed of the gear ring and the central gear and the like are adjusted, so that quick and efficient grinding is realized, and the grinding sheet with excellent processing parameters is obtained.
In the double-sided grinding process, both sides of the cutting sheet are brought into close contact with the upper and lower grinding disks of the grinder while grinding, and removed at the same time. However, the existing double-sided grinding apparatus cannot accurately give the amount of such simultaneous removal of the upper and lower surfaces. For some anisotropic crystals, the two processed surfaces are different, and it is sometimes necessary to know the amount of processing removal of the two surfaces accurately in a double-sided grinding process. Particularly, in the double-sided quantitative thinning process for a specific crystal, if the removal amount of the upper and lower surfaces of the wafer cannot be accurately given, the double-sided grinding process is more complicated and the process time is longer. The likelihood of processing damaged wafers also becomes greater.
Disclosure of Invention
In view of the above problems, the present invention provides an effective method for precisely obtaining the upper and lower removal amounts of a wafer in double-sided lapping, in which the upper and lower removal amounts of the wafer are precisely obtained by using synchronous lapping of a bevel wafer and a normal wafer, measuring the length values of the upper and lower sides of the bevel wafer after lapping, and comparing and calculating the length values of the upper and lower sides of the bevel wafer before lapping.
In order to solve the technical problems, the invention adopts the following technical scheme:
the effective method for precisely obtaining the upper and lower removal amounts in the double-sided grinding of the wafer comprises the following steps:
(1) The homogeneous wafer is selected to be processed into a round shape, and the diameter of the homogeneous wafer is slightly smaller than the aperture of a liquid leakage round hole on the planetary wheel for double-sided grinding; (2) Grinding an inclined plane on one side of the processed round wafer, wherein the inclined plane forms a certain angle with the vertical direction, and the processed homogeneous wafer with the inclined plane on the side surface is used as a reference wafer; (3) Placing a wafer to be ground on the universal double-sided grinding equipment, placing a reference wafer in any liquid leakage hole, and carrying out double-sided grinding on the wafer; (4) After finishing setting the polishing time, taking down the grinding wafer and the reference wafer; (5) And accurately calculating the removal amount of the upper surface and the lower surface of the wafer according to the radial dimension change of the upper surface and the lower surface of the reference wafer. The specific calculation method is shown in the attached drawings. The removal amount of the upper side surface of the polishing sheet isThe lower side removal amount is->
Further, in the step (1), the thickness of the homogenous reference wafer is the same as that of the wafer to be ground;
further, in the step (2), the angle between the inclined plane and the vertical direction is 30-45 degrees; the inclined plane front view is rectangular.
The beneficial effects of the invention are as follows:
the invention provides an effective method for accurately obtaining the upper and lower removal amounts of a wafer in double-sided grinding, which is characterized in that the upper and lower removal amounts of the wafer can be accurately obtained by synchronously grinding a wafer with an inclined section and a normal wafer, measuring the length values of the upper and lower sides of the inclined section after the grinding is finished and comparing and calculating the length values of the upper and lower sides of the inclined section before the grinding. The method has simple process, easy operation and accurate and reliable measurement.
Drawings
FIG. 1 is a side view of a reference wafer of the present invention, schematically shown for removal calculation. Wherein H is the thickness of the reference wafer before double-sided grinding, a is the radial maximum value from the upper side grinding inclined surface to the opposite side before grinding, b is the radial maximum value from the upper side grinding inclined surface to the opposite side after grinding, c is the radial maximum value from the lower side grinding inclined surface to the opposite side after grinding, d is the radial maximum value from the lower side grinding inclined surface to the opposite side before grinding, H is the removal amount of the upper side of the grinding sheet, and H is the removal amount of the lower side of the grinding sheet.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the present invention will be further described in detail with reference to specific examples. The following examples are illustrative only and are not to be construed as limiting the invention.
In order to solve the above-mentioned problems, the present invention provides an effective method for precisely obtaining the upper and lower removal amounts of a wafer in double-sided lapping, in which the upper and lower removal amounts of the wafer are precisely obtained by using synchronous lapping of a bevel wafer and a normal wafer, measuring the length values of the upper and lower sides of the bevel after lapping, and comparing and calculating the length values of the upper and lower sides of the bevel before lapping.
In order to solve the technical problems, the invention adopts the following technical scheme:
the effective method for precisely obtaining the upper and lower removal amounts in the double-sided grinding of the wafer comprises the following steps:
(1) The homogeneous wafer is selected to be processed into a round shape, and the diameter of the homogeneous wafer is slightly smaller than the aperture of a liquid leakage round hole on the planetary wheel for double-sided grinding;
(2) Grinding an inclined plane on the side of the processed round wafer, wherein the inclined plane forms a certain angle with the vertical direction, and the processed homogeneous wafer with the inclined plane on the side is used as a reference wafer;
(3) Placing a wafer to be ground on the universal double-sided grinding equipment, placing a reference wafer in any liquid leakage hole, and carrying out double-sided grinding on the wafer;
(4) After finishing setting the polishing time, taking down the grinding wafer and the reference wafer;
(5) And accurately calculating the removal amount of the upper surface and the lower surface of the wafer according to the radial dimension change of the upper surface and the lower surface of the reference wafer. The specific calculation method is shown in the attached drawings. The removal amount of the upper side surface of the polishing sheet isThe lower side removal amount is->
Therefore, the invention provides an effective method for accurately obtaining the upper and lower surface removal amount of the wafer in double-sided grinding, wherein the upper and lower surface removal amount of the wafer can be accurately obtained by using synchronous grinding of the wafer with the inclined section and the normal wafer and comparing and calculating the upper and lower surface side length values of the inclined section with the upper and lower surface side length values of the inclined section before grinding after grinding. The method has simple process, easy operation and accurate and reliable measurement.
In the description of the present specification, reference to the terms "embodiment," "particular embodiment," "some embodiments," and the like, means that a particular feature, material, structure, or characteristic described in connection with the embodiment or example is included in at least one embodiment of the present invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment. Furthermore, the particular features, materials, structures, or characteristics may be combined in any suitable manner in any one or more embodiments.
While embodiments of the invention have been shown and described, it will be understood by those skilled in the art that: many changes, modifications, substitutions and variations may be made to the embodiments without departing from the spirit and principles of the invention, the scope of which is defined by the claims and their equivalents.
Claims (1)
1. An effective method for accurately obtaining upper and lower removal rates in double-sided lapping of wafers, comprising the steps of:
(1) The homogeneous wafer is selected to be processed into a round shape, and the diameter of the homogeneous wafer is slightly smaller than the aperture of a liquid leakage round hole on the planetary wheel for double-sided grinding;
(2) Grinding one side of the processed round wafer into a bevel, wherein the front view of the bevel is rectangular, the angle between the bevel and the vertical direction is 30-45 degrees, and the processed homogeneous wafer with the bevel on the side is used as a reference wafer;
(3) Placing a wafer to be ground on the universal double-sided grinding equipment, placing the reference wafer in any liquid leakage hole, and carrying out double-sided grinding on the wafer;
(4) After finishing setting the polishing time, taking down the grinding wafer and the reference wafer;
(5) Accurately calculating the removal amount of the upper and lower surfaces of the wafer according to the radial dimension change of the upper and lower surfaces of the reference wafer,
the removal amount of the upper side surface of the polishing sheet isThe lower side removal amount is->
Wherein H is the thickness of the reference wafer before double-sided grinding, a is the radial maximum value from the grinding bevel of the upper side to the opposite side before grinding, b is the radial maximum value from the grinding bevel of the upper side to the opposite side after grinding, c is the radial maximum value from the grinding bevel of the lower side to the opposite side after grinding, d is the radial maximum value from the grinding bevel of the lower side to the opposite side before grinding, H Upper part To remove the upper side of the grinding sheet, h Lower part(s) The amount of the lower side surface of the polishing pad was removed.
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| CN202111330294.0A CN114083430B (en) | 2021-11-10 | 2021-11-10 | Effective method for accurately obtaining upper and lower surface removal amount in double-sided grinding of wafer |
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| CN202111330294.0A CN114083430B (en) | 2021-11-10 | 2021-11-10 | Effective method for accurately obtaining upper and lower surface removal amount in double-sided grinding of wafer |
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| CN114083430B true CN114083430B (en) | 2024-02-09 |
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|---|---|---|---|---|
| KR20030071286A (en) * | 2002-02-28 | 2003-09-03 | 삼성전자주식회사 | Chemical mechanical polishing slurry and chemical mechanical polishing method using the same |
| CN101106082A (en) * | 2006-07-13 | 2008-01-16 | 硅电子股份公司 | Method for the simultaneous double-side grinding of a plurality of semiconductor wafers, and semiconductor wafer having outstanding flatness |
| CN101122584A (en) * | 2007-09-03 | 2008-02-13 | 中国南车集团戚墅堰机车车辆工艺研究所 | Multifunctional measuring means for supersonic wave detection and its measuring method |
| CN101187025A (en) * | 2007-11-28 | 2008-05-28 | 韩祖强 | Dislocated double-sided etching flaking processing method |
| CN101936697A (en) * | 2010-02-10 | 2011-01-05 | 上汽通用五菱汽车股份有限公司 | Measuring instrument |
| WO2013024565A1 (en) * | 2011-08-12 | 2013-02-21 | 信越半導体株式会社 | Stock removal evaluation method and wafer production method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107749391A (en) * | 2017-09-26 | 2018-03-02 | 合肥新汇成微电子有限公司 | A kind of efficient precision thining method of semiconductor crystal wafer |
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2021
- 2021-11-10 CN CN202111330294.0A patent/CN114083430B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030071286A (en) * | 2002-02-28 | 2003-09-03 | 삼성전자주식회사 | Chemical mechanical polishing slurry and chemical mechanical polishing method using the same |
| CN101106082A (en) * | 2006-07-13 | 2008-01-16 | 硅电子股份公司 | Method for the simultaneous double-side grinding of a plurality of semiconductor wafers, and semiconductor wafer having outstanding flatness |
| CN101122584A (en) * | 2007-09-03 | 2008-02-13 | 中国南车集团戚墅堰机车车辆工艺研究所 | Multifunctional measuring means for supersonic wave detection and its measuring method |
| CN101187025A (en) * | 2007-11-28 | 2008-05-28 | 韩祖强 | Dislocated double-sided etching flaking processing method |
| CN101936697A (en) * | 2010-02-10 | 2011-01-05 | 上汽通用五菱汽车股份有限公司 | Measuring instrument |
| WO2013024565A1 (en) * | 2011-08-12 | 2013-02-21 | 信越半導体株式会社 | Stock removal evaluation method and wafer production method |
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