CN114083211A

CN114083211A - Semiconductor welding device

Info

Publication number: CN114083211A
Application number: CN202111448293.6A
Authority: CN
Inventors: 张义威; 文少剑; 黄海翔; 刘猛; 刘健; 黄治家
Original assignee: Shenzhen JPT Optoelectronics Co Ltd
Current assignee: Shenzhen JPT Optoelectronics Co Ltd
Priority date: 2021-11-30
Filing date: 2021-11-30
Publication date: 2022-02-25
Anticipated expiration: 2041-11-30
Also published as: CN114083211B

Abstract

The invention provides a semiconductor welding device, and relates to the field of semiconductor welding. The semiconductor welding device comprises a clamping part and a power supply part, wherein the clamping part is used for fixing a semiconductor to be welded and adjusting the position of the semiconductor to be welded; the power supply part comprises a power supply layer and a short circuit layer, the semiconductor to be welded is electrically connected with the power supply layer and the short circuit layer in sequence in the welding process, the power supply layer is used for providing working current for the semiconductor to be welded, and the short circuit layer is used for enabling the semiconductor to be welded to be in short circuit. The application provides a semiconductor welding set can provide operating current for waiting to weld the semiconductor at the welded in-process, makes it to treat to weld the semiconductor and carries out optical calibration, after position calibration accomplishes, when needing to weld, makes through the short circuit layer and waits to weld the semiconductor short circuit, avoids waiting to weld the damage that has the electric current to cause in the semiconductor when welding.

Description

Semiconductor welding device

Technical Field

The invention relates to the field of semiconductor welding, in particular to a semiconductor welding device.

Background

At present, semiconductor lasers are widely used in various fields, but since the semiconductor lasers themselves have poor heat dissipation effects and it is difficult to maintain stable output without cooling, it is generally necessary to solder a semiconductor to a heat dissipation plate.

In the prior art, because high temperature is generated during welding, the semiconductor cannot be electrified during welding and the light beam cannot be calibrated, thereby affecting the precision of the semiconductor during welding.

Disclosure of Invention

The invention aims to provide a semiconductor welding device which can effectively improve the precision of a semiconductor during welding.

In order to achieve the above purpose, the embodiment of the present invention adopts the following technical solutions:

a semiconductor bonding apparatus includes a clamping portion and a power supply portion;

the clamping part is used for fixing a semiconductor to be welded and adjusting the position of the semiconductor to be welded;

the power supply part comprises a power supply layer and a short-circuit layer, and the semiconductor to be welded is electrically connected with the power supply layer and the short-circuit layer in sequence in the welding process;

the power supply layer is used for providing working current for the semiconductor to be welded;

the short-circuit layer is used for enabling the semiconductor to be welded to be short-circuited.

Optionally, the power supply layer includes a first electrode and a second electrode, the positive and negative pins of the semiconductor to be welded are first electrically connected to the first electrode and the second electrode respectively in the welding process, the first electrode and the second electrode provide a working current for the semiconductor to be welded, and the positive and negative pins are always electrically connected to the first electrode and the second electrode in the process that the semiconductor to be welded moves to the short-circuit layer.

Optionally, the short-circuit layer is a metal layer, and when the positive and negative pins of the semiconductor to be welded are electrically connected to the metal layer, the semiconductor to be welded is short-circuited.

Optionally, the short-circuit layer includes a short-circuit conductor, the short-circuit conductor is disposed between the positive and negative pins of the semiconductor to be welded, and when the positive and negative pins of the semiconductor to be welded are connected to the short-circuit conductor, the semiconductor to be welded is short-circuited.

Optionally, the short circuit layer further includes a third electrode and a fourth electrode, the third electrode is electrically connected to the first electrode, the fourth electrode is electrically connected to the second electrode, and the short circuit conductor is disposed between the third electrode and the fourth electrode.

Optionally, the semiconductor welding device further includes a calibration portion, and the calibration portion is configured to provide a calibration signal, where the calibration signal is used as a reference signal for the clamping portion to adjust the position of the semiconductor to be welded.

Optionally, the calibration portion includes a calibration light source, a half-wave plate, a polarization beam splitter prism, a slow-axis collimation cylindrical mirror and an optical screen, and the calibration light source, the half-wave plate, the polarization beam splitter prism, the slow-axis collimation cylindrical mirror and the optical screen are sequentially arranged.

Optionally, the semiconductor welding device further comprises an adjusting frame, and the clamping portion and the power supply portion are connected with the adjusting frame.

Optionally, the semiconductor welding device further comprises a substrate fixing part, the substrate fixing part comprises a substrate and a fixing table, and the substrate is connected with the fixing table;

the substrate is provided with a welding groove, a through hole is formed in the welding groove, the welding groove is used for welding the semiconductor to be welded, and the pin of the semiconductor to be welded penetrates through the through hole to be electrically connected with the power supply layer and the short-circuit layer in sequence in the welding process.

Optionally, the fixed station is a constant temperature heating station.

Compared with the prior art, the invention has the following beneficial effects:

the application provides a semiconductor welding device, which comprises a clamping part and a power supply part, wherein the clamping part is used for fixing a semiconductor to be welded and adjusting the position of the semiconductor to be welded; the power supply part comprises a power supply layer and a short circuit layer, the semiconductor to be welded is electrically connected with the power supply layer and the short circuit layer in sequence in the welding process, the power supply layer is used for providing working current for the semiconductor to be welded, and the short circuit layer is used for enabling the semiconductor to be welded to be in short circuit. The application provides a semiconductor welding set can provide operating current for waiting to weld the semiconductor at the welded in-process, makes it to treat to weld the semiconductor and carries out optical calibration, after position calibration accomplishes, when needing to weld, makes through the short circuit layer and waits to weld the semiconductor short circuit, avoids waiting to weld the damage that has the electric current to cause in the semiconductor when welding.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, it should be understood that the following drawings only illustrate some embodiments of the present invention and therefore should not be considered as limiting the scope, and for those skilled in the art, other related drawings can be obtained according to the drawings without inventive efforts.

Fig. 1 is a schematic position diagram of a semiconductor bonding apparatus according to an embodiment of the present disclosure;

fig. 2 is a second schematic view of a semiconductor soldering apparatus according to an embodiment of the present application;

fig. 3 is a schematic structural diagram of a semiconductor bonding apparatus according to an embodiment of the present disclosure;

fig. 4 is a second schematic structural diagram of a semiconductor soldering apparatus according to an embodiment of the present application;

fig. 5 is a schematic structural diagram of an alignment portion according to an embodiment of the present disclosure;

fig. 6 is a schematic structural diagram of a clamping portion according to an embodiment of the present application.

Icon: 100-semiconductor soldering device; 10-a clamping part; 20-a power supply section; 30-a semiconductor to be soldered; 40-a calibration section; 210-a power supply layer; 220-a shorting layer; 2110-a first electrode; 2120-a second electrode; 2210-short-circuited conductor; 2220-third electrode; 2230-a fourth electrode; 410-a calibration light source; 420-half wave plate; 430-polarization beam splitter prism; 440-slow axis collimating cylindrical mirror; 450-light screen; 110-a threaded rod; 120-threaded through hole.

Detailed Description

As described in the background, the prior art fails to solve the contradiction between the high temperature of the semiconductor during bonding and the current required by the semiconductor itself for light emission calibration.

The problems existing in the prior art are all the results obtained after the inventor practices and researches, so that the discovery process of the problems and the solution proposed by the embodiment of the invention in the following for the problems are all the contributions of the inventor in the invention process.

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. The components of embodiments of the present invention generally described and illustrated in the figures herein may be arranged and designed in a wide variety of different configurations.

Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.

In the description of the present invention, it should be noted that if the terms "upper", "lower", "inside", "outside", etc. indicate an orientation or a positional relationship based on that shown in the drawings or that the product of the present invention is used as it is, this is only for convenience of description and simplification of the description, and it does not indicate or imply that the device or the element referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus should not be construed as limiting the present invention.

Furthermore, the appearances of the terms "first," "second," and the like, if any, are used solely to distinguish one from another and are not to be construed as indicating or implying relative importance.

The terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.

Some embodiments of the invention are described in detail below with reference to the accompanying drawings. It should be noted that the features of the embodiments of the present invention may be combined with each other without conflict.

Referring to fig. 1 and fig. 2 in combination, an embodiment of the present application provides a semiconductor welding apparatus 100, which includes a clamping portion 10 and a power supply portion 20, where the clamping portion 10 is used to fix a semiconductor 30 to be welded and adjust a position of the semiconductor 30 to be welded, the power supply portion 20 includes a power supply layer 210 and a shorting layer 220, the semiconductor 30 to be welded is electrically connected to the power supply layer 210 and the shorting layer 220 in sequence during a welding process, the power supply layer 210 is used to provide an operating current for the semiconductor 30 to be welded, and the shorting layer 220 is used to short-circuit the semiconductor 30 to be welded.

The following takes the process of diode soldering as an example to further illustrate the technical solution of the present embodiment.

The clamping portion 10 is used for clamping and fixing the diode during the welding process of the diode and adjusting the position of the diode, wherein the adjustment can be the adjustment of the position in any direction. In the process of welding, the clamping portion 10 fixes the diode and moves towards the substrate, a welding material is laid on the surface of the substrate and a corresponding through hole is arranged, the pin of the semiconductor 30 to be welded can pass through the through hole arranged on the substrate and is connected with the power supply layer 210 (as shown in fig. 1), the power supply layer 210 supplies working current to the diode to enable the diode to emit light, a technician adjusts the position of the diode according to the position of the diode emitting light beams, so that the position of the diode is matched with the preset position, after the position is matched, the diode continues to move towards the surface of the substrate, and the power supply layer 210 is always connected with the pin of the diode in the moving process, so that the diode can still be in a working state in the moving process and emit light beams, and the position of the diode is continuously adjusted. When the position of the diode is determined, the diode is contacted with the welding material laid on the substrate, meanwhile, the pin of the diode is contacted with the short-circuit layer 220 (the position is shown in fig. 2), the short-circuit layer 220 enables the diode to be in short circuit, no current passes through the diode at the moment, and then the welding material is heated through a heating device, so that the welding of the diode and the substrate is completed.

It should be noted that the position of the power supply layer 210 is closer to the clamping portion 10 than the position of the short-circuit layer 220, so that the semiconductor 30 to be soldered is electrically connected to the power supply layer 210 and the short-circuit layer 220 in sequence during the soldering process.

When the pin of the diode is in contact with the shorting layer 220, the pin of the diode may also continue to be in contact with the power supply layer 210, which does not affect the diode being shorted.

Since the substrate needs to be placed between the clamping portion 10 and the power supply portion 20 during the soldering process, and the diode also needs to be directly connected to the power supply portion 20, when the device is used for soldering, there is a certain requirement on the structure of the substrate, and the substrate needs to be provided with a corresponding through hole so that the pin of the diode passes through the substrate and is connected to the power supply portion 20, and the size of the through hole is not specifically limited, as long as the pin of the diode can pass through the through hole.

By the semiconductor welding device 100 provided by the embodiment, the contradiction between high temperature during semiconductor welding and the fact that the semiconductor needs current to carry out light-emitting calibration can be effectively solved, the semiconductor is ensured to work under a safe temperature condition, burning loss of the semiconductor is avoided, and the accuracy of semiconductor welding is improved.

It should be noted that the soldering process described in the present embodiment does not only refer to a process in which the diode is sufficiently contacted with the soldering material for soldering, but the soldering process should be broadly understood to refer to the entire process from the fixing of the diode by the clamping portion 10 to the completion of the soldering of the diode and the substrate.

In another possible embodiment, referring to fig. 3, the power supply layer 210 includes a first electrode 2110 and a second electrode 2120, the positive and negative leads of the semiconductor 30 to be soldered are first electrically connected to the first electrode 2110 and the second electrode 2120 respectively during the soldering process, the first electrode 2110 and the second electrode 2120 provide the working current for the semiconductor 30 to be soldered, and the positive and negative leads are always electrically connected to the first electrode 2110 and the second electrode 2120 during the movement of the semiconductor 30 to be soldered to the shorting layer 220.

It should be noted that, when the semiconductor 30 to be soldered is a diode, the corresponding power supply layer 210 includes two electrodes and is respectively connected to two pins of the diode, so that it can provide the diode with the operating current required for generating the light beam. When the semiconductor 30 to be soldered has a plurality of pins, the corresponding power supply layer 210 may include a plurality of electrodes and be respectively connected to the corresponding pins, so as to provide the required operating current for the semiconductor 30 to be soldered.

In this embodiment, the positive and negative polarities of the first electrode 2110 and the second electrode 2120 are not limited, and may be set according to actual needs.

In the process of soldering, the pin of the semiconductor 30 to be soldered is first connected to the first electrode 2110 and the second electrode 2120 of the power supply layer 210, at which time the semiconductor 30 to be soldered is conducted to generate a light beam, and during the process that the semiconductor 30 to be soldered continues to move towards the shorting layer 220, the first electrode 2110 and the second electrode 2120 are always in contact with the pin of the semiconductor 30 to be soldered, so that the semiconductor 30 to be soldered can still generate a light beam during the process of moving. Until the pin of the semiconductor 30 to be soldered contacts the shorting layer 220, the semiconductor 30 to be soldered is shorted, no current flows through the inside, and meanwhile, the semiconductor 30 to be soldered fully contacts the soldering material, completing the soldering of the semiconductor 30 to be soldered and the substrate.

In another possible embodiment, the shorting layer 220 is a metal layer, and when the positive and negative leads of the semiconductor 30 to be soldered are electrically connected to the metal layer, the semiconductor 30 to be soldered is shorted.

In the present embodiment, the specific material and shape and size of the short-circuit layer 220 are not specifically limited, and may be a strip or a plate, but the shape and size of the short-circuit layer 220 may at least meet the requirement that the pin of the semiconductor 30 to be soldered is in contact with the short-circuit layer 220 at the same time, so as to short-circuit the short-circuit layer 220.

In another implementation manner, please continue to refer to fig. 3, the shorting layer 220 includes a shorting conductor 2210, the shorting conductor 2210 is disposed between the positive and negative pins of the semiconductor 30 to be soldered, and when the positive and negative pins of the semiconductor 30 to be soldered are both connected to the shorting conductor 2210, the semiconductor 30 to be soldered is shorted.

In this embodiment, the shorting conductor 2210 is disposed between the pins of the semiconductor 30 to be soldered, so as to short-circuit the semiconductor 30 to be soldered, thereby saving the area occupied by the shorting layer 220 to the maximum extent.

It should be noted that, in the present embodiment, the short conductor 2210 is disposed between the pins of the semiconductor 30 to be soldered, which does not mean that the short conductor 2210 is always connected to the pins of the semiconductor 30 to be soldered, specifically, when the pins of the semiconductor 30 to be soldered are in contact with the short conductor 2210, the short conductor 2210 is located between the pins of the semiconductor 30 to be soldered.

In another possible implementation manner, referring to fig. 4, the shorting layer 220 further includes a third electrode 2220 and a fourth electrode 2230, the third electrode 2220 is electrically connected to the first electrode 2110, the fourth electrode 2230 is electrically connected to the second electrode 2120, and the shorting conductor 2210 is disposed between the third electrode 2220 and the fourth electrode 2230.

It should be noted that, in a possible embodiment, the third electrode 2220 may not be connected to the first electrode 2110, and the fourth electrode 2230 may not be connected to the second electrode 2120.

In the present embodiment, the short-circuit layer 220 is connected to the power supply layer 210, but the short-circuit layer 220 is further provided with a short-circuit conductor 2210, so that the short-circuit layer 220 and the power supply layer 210 respectively have different effects.

Alternatively, the power supply part 20 is fixed and packaged with an insulating material.

Optionally, referring to fig. 5, the semiconductor bonding apparatus 100 further includes a calibration portion 40, where the calibration portion 40 is configured to provide a calibration signal, and the calibration signal is used as a reference signal for the clamping portion 10 to adjust the position of the semiconductor 30 to be bonded.

When the semiconductor 30 to be soldered is soldered, the calibration signal provided by the calibration part 40 is required to be used as a reference signal, the position of the semiconductor 30 to be soldered is adjusted by comparing the calibration signal with the position relation of the light beam generated by the semiconductor 30 to be soldered, and when the calibration signal and the light beam satisfy a certain condition, the semiconductor 30 to be soldered is considered to be adjusted to a proper position.

It should be noted that, in this embodiment, the positional relationship and the connection relationship between the calibration portion 40 and the clamping portion 10 are not limited, and the calibration portion 40 can adjust the positional relationship with the clamping portion 10 according to actual needs, so as to meet different precision requirements.

Optionally, the calibration portion 40 includes a calibration light source 410, a half-wave plate 420, a polarization beam splitter 430, a slow-axis collimating cylindrical mirror 440, and a light screen 450, and the calibration light source 410, the half-wave plate 420, the polarization beam splitter 430, the slow-axis collimating cylindrical mirror 440, and the light screen 450 are sequentially disposed.

It should be noted that the internal structure and the calibration principle of the calibration unit 40 described above belong to the prior art, and are not described again in this embodiment.

In another possible embodiment, the semiconductor bonding apparatus 100 further includes a regulation frame, and the clamping portion 10 and the power supply portion 20 are connected to the regulation frame.

The clamping part 10 is connected with the power supply part 20 through the adjusting bracket, so that the clamping part 10 can be more stable, and the clamping part 10 can be adjusted through the adjusting bracket, so that the purpose of adjusting the position of the semiconductor 30 to be welded is achieved.

It should be noted that the adjusting frame may be a six-dimensional adjusting frame or other adjusting frames, and this embodiment is not limited in particular.

Optionally, referring to fig. 6, a threaded rod 110 is disposed on the clamping portion 10, and the clamping portion 10 is connected to the adjusting frame through the threaded rod 110.

In another alternative embodiment, the clamping portion 10 is further provided with a threaded through hole 120, and a bolt fixes the semiconductor 30 to be soldered through the threaded through hole 120.

Alternatively, the clamping portion 10 is an annular clamping device, the inner diameter of which should be larger than the outer diameter of the semiconductor 30 to be welded, preferably, and the difference should be less than 0.5 mm.

In another alternative embodiment, the semiconductor soldering device 100 further includes a substrate fixing portion including a substrate and a fixing stage, the substrate being connected to the fixing stage.

The substrate is provided with a welding groove, a through hole is formed in the welding groove, the welding groove is used for welding the semiconductor 30 to be welded, and the pin of the semiconductor 30 to be welded penetrates through the through hole to be electrically connected with the power supply layer 210 and the short-circuit layer 220 in sequence in the welding process.

In the present embodiment, the bonding method between the substrate and the semiconductor 30 to be bonded is not particularly limited, and the substrate and the semiconductor may be soldered or bonded by other methods.

In this embodiment, the size of the soldering groove should be larger than the size of the base of the soldering machine for the semiconductor 30 to be soldered, and the semiconductor 30 to be soldered can be adjusted in position within the range of the size of the soldering groove. Preferably, the bonding groove is a circular groove, the depth of which is greater than the height of the base of the semiconductor 30 to be bonded, and the difference between the inner diameter of the circular groove and the inner diameter of the base of the semiconductor 30 to be bonded is less than 0.2 mm.

In another alternative embodiment, the fixed stage is a constant temperature heating stage, and the fixed stage can heat the substrate to melt the solder laid on the substrate, so as to solder the semiconductor 30 to be soldered.

In order to better understand the technical solution provided by the present embodiment, the following describes the technical solution of the present embodiment with reference to a specific welding process.

Firstly, the calibration part 40 is initialized, after the light beam output by the calibration light source 410 passes through the half-wave plate 420, the polarization state is rotated by 90 degrees, the polarization beam splitter 430 is arranged to enable the calibration light beam to penetrate, the slow axis of the light beam is collimated by the slow axis collimating cylindrical lens 440 and finally the light beam is irradiated on the light screen 450, the position of the light screen 450 is adjusted to enable the center of the light spot to fall on the cross line of the light screen 450, and the cross line of the light screen 450 is parallel to the edge of the light spot respectively, namely the calibration is finished.

The diode is placed in the clamping part 10, the diode is fixed by adopting a set screw, and the clamping part 10 is provided with a threaded rod 110 which is connected with the six-dimensional adjusting frame in a matching way and used for controlling the position movement of the diode. And solder is placed in the substrate welding groove, one end of the substrate is connected with the constant-temperature heating table, and the temperature of the base is controlled to be slightly higher than the melting point of the solder so that the solder is kept in a molten state. The power supply portion 20 is applied with a voltage across it, and the height position is adjusted as shown in fig. 1, so that the pins of the diode are connected to the power supply layer 210. At the moment, the base of the diode is not contacted with the substrate, and under the condition of small current, the output power of the diode is low, the temperature is low, and the normal work can be kept. The light beam output by the diode is reflected after passing through the polarization beam splitter 430, collimated through the slow axis collimating cylindrical mirror 440, and finally irradiated at the light screen 450, the six-dimensional adjusting frame is adjusted to enable the deflection angle of the diode to be located at the cross center of the light screen 450, the center point of the output light spot of the diode is located at the cross center of the light screen 450, the edge of the light spot is parallel to the cross line, and when the diode is adjusted to enable the diode to move along the vertical direction, the position of the light spot on the light screen 450 is kept unchanged, namely the position of the diode is considered to be adjusted completely. When the diode continues to move to the position shown in fig. 2 along the vertical direction, the base of the diode is in contact with the substrate, the temperature of the diode rapidly rises at the moment, meanwhile, the pin of the diode is in contact with the short-circuit layer 220, the diode is in short circuit, no current passes at the moment, and the burning loss of a light-emitting chip in the diode is avoided. After the base of the diode is fully contacted with the solder, the heating device is closed to naturally cool the substrate, and then the set screw is taken down to finish the adjustment and the welding.

The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.

Claims

1. A semiconductor bonding apparatus, characterized in that the semiconductor bonding apparatus comprises a clamping portion and a power supply portion;

2. The semiconductor welding device according to claim 1, wherein the power supply layer comprises a first electrode and a second electrode, positive and negative pins of the semiconductor to be welded are firstly electrically connected with the first electrode and the second electrode respectively during welding, the first electrode and the second electrode provide working current for the semiconductor to be welded, and the positive and negative pins are always electrically connected with the first electrode and the second electrode during movement of the semiconductor to be welded to the short-circuit layer.

3. The semiconductor welding device according to claim 2, wherein the short circuit layer is a metal layer, and when the positive and negative pins of the semiconductor to be welded are electrically connected with the metal layer, the semiconductor to be welded is short-circuited.

4. The semiconductor welding device according to claim 2, wherein the short-circuit layer comprises a short-circuit conductor, the short-circuit conductor is arranged between the positive and negative pins of the semiconductor to be welded, and when the positive and negative pins of the semiconductor to be welded are both connected with the short-circuit conductor, the semiconductor to be welded is short-circuited.

5. The semiconductor bonding apparatus of claim 4, wherein the shorting layer further comprises a third electrode electrically connected to the first electrode and a fourth electrode electrically connected to the second electrode, the shorting conductor disposed between the third electrode and the fourth electrode.

6. Semiconductor soldering device according to claim 1, characterized in that the semiconductor soldering device further comprises a calibration section for providing a calibration signal as a reference signal for the clamping section to adjust the position of the semiconductor to be soldered.

7. The semiconductor welding device according to claim 6, wherein the calibration portion comprises a calibration light source, a half-wave plate, a polarization beam splitter prism, a slow-axis collimating cylindrical mirror and a light screen, and the calibration light source, the half-wave plate, the polarization beam splitter prism, the slow-axis collimating cylindrical mirror and the light screen are arranged in sequence.

8. The semiconductor bonding apparatus according to claim 1, further comprising a regulation frame, wherein the clamping portion and the power supply portion are connected to the regulation frame.

9. The semiconductor soldering apparatus according to claim 1, further comprising a substrate fixing portion including a substrate and a fixing table, the substrate being connected to the fixing table;

10. The semiconductor bonding apparatus according to claim 9, wherein the fixing stage is a constant temperature heating stage.