CN114072539A - 镀膜设备和应用 - Google Patents

镀膜设备和应用 Download PDF

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Publication number
CN114072539A
CN114072539A CN202080001813.6A CN202080001813A CN114072539A CN 114072539 A CN114072539 A CN 114072539A CN 202080001813 A CN202080001813 A CN 202080001813A CN 114072539 A CN114072539 A CN 114072539A
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reaction chamber
gas inlet
electrode
gas
reaction
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CN114072539B (zh
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宗坚
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Jiangsu Favored Nanotechnology Co Ltd
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Jiangsu Favored Nanotechnology Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

本发明提供了一镀膜设备和应用,以供在待镀膜工件的表面镀膜,所述镀膜设备包括一电极装置和一反应腔体,其中所述反应腔体具有一反应腔、连通所述反应腔的至少一进料口和至少一抽气口,其中所述进料口位于所述反应腔体的靠近中间位置,其中所述抽气口位于所述反应腔体的侧面位置,其中所述电极装置在所述反应腔内放电,以供在该待镀膜工件的表面镀膜。

Description

PCT国内申请,说明书已公开。

Claims (40)

  1. PCT国内申请,权利要求书已公开。
CN202080001813.6A 2020-06-09 2020-06-09 镀膜设备和应用 Active CN114072539B (zh)

Applications Claiming Priority (1)

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PCT/CN2020/095072 WO2021248303A1 (zh) 2020-06-09 2020-06-09 镀膜设备和应用

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CN114072539A true CN114072539A (zh) 2022-02-18
CN114072539B CN114072539B (zh) 2023-11-14

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WO (1) WO2021248303A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115125522A (zh) * 2022-07-29 2022-09-30 龙鳞(深圳)新材料科技有限公司 一种镀膜系统
CN115505896A (zh) * 2022-10-11 2022-12-23 江苏鹏举半导体设备技术有限公司 旋转式内壁镀膜装置

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US4969416A (en) * 1986-07-03 1990-11-13 Emcore, Inc. Gas treatment apparatus and method
US5422139A (en) * 1990-04-12 1995-06-06 Balzers Aktiengesellschaft Method for a reactive surface treatment of a workpiece and a treatment chamber for practicing such method
JP2000252218A (ja) * 1999-03-01 2000-09-14 Kanegafuchi Chem Ind Co Ltd プラズマcvd装置およびシリコン系薄膜光電変換装置の製造方法
JP2001140078A (ja) * 1999-11-12 2001-05-22 Anelva Corp 化学蒸着装置
US20030091742A1 (en) * 1999-12-14 2003-05-15 Jeanne Forget Coating method
CN102054650A (zh) * 2009-10-28 2011-05-11 东京毅力科创株式会社 等离子体处理装置
CN102206815A (zh) * 2010-03-30 2011-10-05 鸿富锦精密工业(深圳)有限公司 等离子体镀膜装置
CN103451621A (zh) * 2012-06-05 2013-12-18 北京北方微电子基地设备工艺研究中心有限责任公司 Mocvd反应腔及工艺设备
CN104428444A (zh) * 2012-07-13 2015-03-18 盖列姆企业私人有限公司 膜形成装置及方法
CN106958012A (zh) * 2017-05-21 2017-07-18 无锡荣坚五金工具有限公司 一种基材运动式等离子体放电制备纳米涂层的设备及方法
CN107022753A (zh) * 2017-04-19 2017-08-08 同济大学 一种原子层沉积反应装置及通孔材料表面薄膜沉积工艺
CN108690972A (zh) * 2018-08-06 2018-10-23 长江存储科技有限责任公司 用于膜层沉积装置的气体注入管及膜层沉积装置
CN208667844U (zh) * 2018-08-06 2019-03-29 长江存储科技有限责任公司 用于膜层沉积装置的气体注入管及膜层沉积装置
CN110106481A (zh) * 2019-06-06 2019-08-09 京东方科技集团股份有限公司 镀膜装置及物理气相沉积设备
US20190385826A1 (en) * 2018-06-13 2019-12-19 Industrial Technology Research Institute Plasma processing device
CN110965048A (zh) * 2019-12-04 2020-04-07 江苏菲沃泰纳米科技有限公司 镀膜设备及其电极装置和应用
CN111020534A (zh) * 2019-12-04 2020-04-17 江苏菲沃泰纳米科技有限公司 镀膜设备

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11195611A (ja) * 1997-12-26 1999-07-21 Canon Inc 反応装置及び半導体部材の製造方法
CN209307484U (zh) * 2018-12-11 2019-08-27 广东双虹新材料科技有限公司 一种常压多层气相反应炉

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4969416A (en) * 1986-07-03 1990-11-13 Emcore, Inc. Gas treatment apparatus and method
US5422139A (en) * 1990-04-12 1995-06-06 Balzers Aktiengesellschaft Method for a reactive surface treatment of a workpiece and a treatment chamber for practicing such method
JP2000252218A (ja) * 1999-03-01 2000-09-14 Kanegafuchi Chem Ind Co Ltd プラズマcvd装置およびシリコン系薄膜光電変換装置の製造方法
JP2001140078A (ja) * 1999-11-12 2001-05-22 Anelva Corp 化学蒸着装置
US20030091742A1 (en) * 1999-12-14 2003-05-15 Jeanne Forget Coating method
CN102054650A (zh) * 2009-10-28 2011-05-11 东京毅力科创株式会社 等离子体处理装置
CN102206815A (zh) * 2010-03-30 2011-10-05 鸿富锦精密工业(深圳)有限公司 等离子体镀膜装置
CN103451621A (zh) * 2012-06-05 2013-12-18 北京北方微电子基地设备工艺研究中心有限责任公司 Mocvd反应腔及工艺设备
CN104428444A (zh) * 2012-07-13 2015-03-18 盖列姆企业私人有限公司 膜形成装置及方法
CN107022753A (zh) * 2017-04-19 2017-08-08 同济大学 一种原子层沉积反应装置及通孔材料表面薄膜沉积工艺
CN106958012A (zh) * 2017-05-21 2017-07-18 无锡荣坚五金工具有限公司 一种基材运动式等离子体放电制备纳米涂层的设备及方法
US20190385826A1 (en) * 2018-06-13 2019-12-19 Industrial Technology Research Institute Plasma processing device
CN108690972A (zh) * 2018-08-06 2018-10-23 长江存储科技有限责任公司 用于膜层沉积装置的气体注入管及膜层沉积装置
CN208667844U (zh) * 2018-08-06 2019-03-29 长江存储科技有限责任公司 用于膜层沉积装置的气体注入管及膜层沉积装置
CN110106481A (zh) * 2019-06-06 2019-08-09 京东方科技集团股份有限公司 镀膜装置及物理气相沉积设备
CN110965048A (zh) * 2019-12-04 2020-04-07 江苏菲沃泰纳米科技有限公司 镀膜设备及其电极装置和应用
CN111020534A (zh) * 2019-12-04 2020-04-17 江苏菲沃泰纳米科技有限公司 镀膜设备

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CN114072539B (zh) 2023-11-14

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