CN114068333A - Heat dissipation plate and preparation method thereof - Google Patents
Heat dissipation plate and preparation method thereof Download PDFInfo
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- CN114068333A CN114068333A CN202010753802.5A CN202010753802A CN114068333A CN 114068333 A CN114068333 A CN 114068333A CN 202010753802 A CN202010753802 A CN 202010753802A CN 114068333 A CN114068333 A CN 114068333A
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- 230000017525 heat dissipation Effects 0.000 title claims abstract description 72
- 238000002360 preparation method Methods 0.000 title abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 82
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims abstract description 50
- 229910010271 silicon carbide Inorganic materials 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 40
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 20
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 18
- 238000005269 aluminizing Methods 0.000 claims abstract description 18
- 229910052802 copper Inorganic materials 0.000 claims abstract description 18
- 239000010949 copper Substances 0.000 claims abstract description 18
- 239000000463 material Substances 0.000 claims abstract description 16
- 239000011148 porous material Substances 0.000 claims abstract description 14
- 239000007788 liquid Substances 0.000 claims abstract description 13
- 238000003466 welding Methods 0.000 claims abstract description 13
- 238000011049 filling Methods 0.000 claims abstract description 11
- 238000004519 manufacturing process Methods 0.000 claims description 19
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 16
- 239000002131 composite material Substances 0.000 claims description 16
- 238000005476 soldering Methods 0.000 claims description 9
- 235000015895 biscuits Nutrition 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910052759 nickel Inorganic materials 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- 238000005219 brazing Methods 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- 230000008569 process Effects 0.000 claims description 6
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 239000011230 binding agent Substances 0.000 claims description 4
- 238000001125 extrusion Methods 0.000 claims description 4
- 238000005469 granulation Methods 0.000 claims description 4
- 230000003179 granulation Effects 0.000 claims description 4
- 238000002156 mixing Methods 0.000 claims description 4
- 238000005245 sintering Methods 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- WUUZKBJEUBFVMV-UHFFFAOYSA-N copper molybdenum Chemical compound [Cu].[Mo] WUUZKBJEUBFVMV-UHFFFAOYSA-N 0.000 claims description 3
- 238000011068 loading method Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 238000007723 die pressing method Methods 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims 2
- 230000000694 effects Effects 0.000 abstract description 6
- 238000000748 compression moulding Methods 0.000 abstract description 4
- 229910003465 moissanite Inorganic materials 0.000 abstract description 2
- 238000003825 pressing Methods 0.000 abstract 1
- 229910000962 AlSiC Inorganic materials 0.000 description 18
- 238000004088 simulation Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 5
- 230000002035 prolonged effect Effects 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000005587 bubbling Effects 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
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- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4871—Bases, plates or heatsinks
- H01L21/4882—Assembly of heatsink parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3733—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon having a heterogeneous or anisotropic structure, e.g. powder or fibres in a matrix, wire mesh, porous structures
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3735—Laminates or multilayers, e.g. direct bond copper ceramic substrates
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3736—Metallic materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3738—Semiconductor materials
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Abstract
The invention discloses a heat dissipation plate and a preparation method thereof, wherein the preparation method of the heat dissipation plate comprises the following steps of preparing a silicon carbide SiC porous prefabricated blank by a mould pressing forming method; filling molten aluminum liquid into the pores of the SiC porous prefabricated blank by using a vacuum pressure aluminizing method to obtain a first substrate; providing a second substrate, wherein the material of the second substrate comprises copper; and carrying out welding treatment on the first substrate and the second substrate to obtain the heat dissipation plate. Therefore, the preparation method firstly prepares the first substrate made of SiC and aluminum through a compression molding method and a vacuum pressure aluminizing method, and then obtains the heat dissipation plate by welding the first substrate and the second substrate, wherein the material of the second substrate comprises copper. Therefore, the method can improve the heat dissipation effect of the chip and simultaneously meets the requirement of light weight of the heat dissipation plate.
Description
Technical Field
The invention relates to the technical field of heat dissipation plate preparation, in particular to a heat dissipation plate preparation method and a heat dissipation plate.
Background
With the progress and development of technologies, higher requirements are put on chips such as IGBT modules, which are core components of electric vehicles, and chip packages are developed toward miniaturization and light weight, and system efficiency is ensured. With this requirement, the IGBT module current density is higher and higher, resulting in an increase in the temperature of the IGBT module. According to the theoretical result of reliability, the service life of the IGBT module is shortened by half for every 10 ℃ rise of the temperature of the electronic device in the IGBT module, and therefore the service life of the IGBT module can be prolonged by reducing the temperature of a chip.
At present, the heat dissipation plate of the IGBT module mainly includes a planar AlSiC plate, an AlSiC plate with pin fins (pin-fin), a planar copper plate, and a copper plate with pin fins (pin-fin). However, the above-mentioned heat dissipation plates are all single metal plates or alloy plates, and cannot meet the requirements of efficient heat dissipation and light weight.
Disclosure of Invention
The present invention is directed to solving, at least to some extent, one of the technical problems in the related art. Therefore, an object of the present invention is to provide a method for manufacturing a heat dissipation plate, so as to improve the heat dissipation effect of a chip and simultaneously meet the requirement of light weight of the heat dissipation plate.
A second object of the present invention is to provide a heat sink.
In order to achieve the above object, a first aspect of the present invention provides a method for manufacturing a heat dissipation plate, including the steps of: preparing a silicon carbide SiC porous prefabricated blank by using a die pressing forming method; filling molten aluminum liquid into the pores of the SiC porous prefabricated blank by utilizing a vacuum pressure aluminizing method to obtain a first substrate; providing a second substrate, wherein the material of the second substrate comprises copper; and carrying out welding treatment on the first substrate and the second substrate to obtain the heat dissipation plate.
According to the embodiment of the invention, the first substrate made of SiC and aluminum is prepared by a compression molding method and a vacuum pressure aluminizing method, and then the first substrate and the second substrate are subjected to welding treatment to obtain the heat dissipation plate, wherein the second substrate is made of copper. Therefore, the method can improve the heat dissipation effect of the chip and simultaneously meets the requirement of light weight of the heat dissipation plate.
In some examples of the present invention, the preparing the SiC porous preform using a press molding method includes: mixing SiC micro powder, water and a binder according to a preset ratio, performing extrusion granulation and drying treatment, and pouring into a preset mold; forming the material in the preset die by using a hydraulic press to obtain a SiC porous biscuit; and carrying out drying and sintering treatment on the SiC porous biscuit to obtain the SiC porous preform.
In some examples of the present invention, the first substrate and the second substrate are subjected to a welding process by soldering or brazing.
In some examples of the present invention, the method of manufacturing the heat dissipation plate further includes: before the first substrate and the second substrate are subjected to welding treatment, a nickel layer with a first preset thickness is plated on the surface of the first substrate, and the second substrate is welded with the first substrate through the nickel layer.
In some examples of the present invention, the predetermined mold has a plurality of bosses such that the first base plate has a plurality of grooves, and the grooves have a first predetermined depth; the number of the second substrates is plural, and the performing of the soldering process on the first substrate and the second substrate includes: the second base plates are welded with the groove bodies on the first base plate in a one-to-one correspondence mode, and the second base plates are welded in the groove bodies.
In some examples of the present invention, the filling of the pores of the SiC porous preform with a molten aluminum liquid by vacuum pressure aluminizing to obtain a first substrate includes: loading the SiC porous prefabricated blank into a honeycomb graphite mold, and placing the honeycomb graphite mold into a vacuum pressure aluminizing furnace; filling molten aluminum liquid into the pores of the SiC porous prefabricated blank through the vacuum pressure aluminizing furnace; and after the molten aluminum is cooled, drawing a mold to obtain the first substrate with a plurality of heat dissipation pin fins.
In some examples of the invention, the material of the second substrate further comprises diamond or copper molybdenum composite material.
In some examples of the invention, the first predetermined depth is in a range of 0.1-2 mm.
In some examples of the invention, the first predetermined thickness is less than or equal to 10 μm.
In order to achieve the above object, a second aspect of the present invention provides a heat dissipation plate, which is manufactured by the method for manufacturing a heat dissipation plate in the above example.
The heat dissipation plate provided by the embodiment of the invention is prepared by the heat dissipation plate preparation method, so that the heat dissipation effect of a chip can be improved, and the light weight requirement of the heat dissipation plate is considered.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
Fig. 1 is a flowchart of a method of manufacturing a heat dissipation plate according to an embodiment of the present invention;
fig. 2 is a schematic view of a heat sink plate according to an embodiment of the present invention;
fig. 3 is a schematic view of a heat radiating plate according to another embodiment of the present invention;
FIG. 4 is a diagram illustrating a simulation result of a temperature of a heat sink;
FIG. 5 is a diagram showing a simulation result of a chip temperature of another heat dissipating plate;
FIG. 6 is a diagram illustrating a simulation result of a chip temperature of another heat dissipation plate;
fig. 7 is a diagram showing a simulation result of the chip temperature of the heat radiating plate according to the embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are illustrative and intended to be illustrative of the invention and are not to be construed as limiting the invention.
A heat dissipation plate and a method of manufacturing the same according to an embodiment of the present invention will be described below with reference to the accompanying drawings.
Fig. 1 is a flowchart of a method of manufacturing a heat dissipation plate according to an embodiment of the present invention.
In this embodiment, as shown in fig. 1, the method for manufacturing the heat dissipation plate includes the steps of:
s10, preparing the silicon carbide SiC porous prefabricated blank by a compression molding method.
Specifically, preset dies with different sizes can be respectively made according to different types of heat dissipation plates, and then the multi-hole prefabricated blank is manufactured through a compression molding method. In some examples, preparing the SiC porous preform using a press molding method includes: mixing SiC micro powder, water and a binder according to a preset ratio, performing extrusion granulation and drying treatment, and pouring into a preset mold; forming the material in the preset die by using a hydraulic press to obtain a SiC porous biscuit; and (4) carrying out drying and sintering treatment on the SiC porous biscuit to obtain the SiC porous preform.
It should be noted that the size and the number of the pores of the SiC porous biscuit can be controlled by controlling the particle size of the SiC micro powder, and the size and the number of the pores of the SiC porous biscuit can also be controlled by stirring and bubbling the mixture. It is understood that the porous SiC green body is obtained by mixing SiC fine powder, water and a binder in a predetermined ratio, and then performing extrusion granulation and drying, wherein the drying temperature can be selected from a range (e.g., 60 ℃ to 80 ℃). After the porous SiC green compact is produced, the porous SiC green compact may be dried in an environment at 110 ℃ for 24 hours, and then the dried porous SiC green compact may be sintered in a sintering furnace for 8 hours and then furnace-cooled to obtain a porous SiC preform.
S20, filling molten aluminum liquid into the pores of the SiC porous prefabricated blank by utilizing a vacuum pressure aluminizing method to obtain a first substrate.
In some examples of the present invention, filling the pores of the SiC porous preform with a molten aluminum liquid using vacuum pressure aluminizing to obtain a first substrate may include: filling the SiC porous prefabricated blank into a honeycomb graphite mold, and putting the honeycomb graphite mold into a vacuum pressure aluminizing furnace; filling molten aluminum liquid into the pores of the SiC porous prefabricated blank through a vacuum pressure aluminizing furnace; and after the molten aluminum is cooled, drawing the mold to obtain a first substrate with a plurality of heat dissipation pin fins.
In this example, as shown in fig. 2, the first substrate 2 has a plurality of heat dissipating pin fins 3 on a side thereof remote from the second substrate 1, and the heat dissipating capability of the heat dissipating plate can be further improved by the heat dissipating pin fins 3.
Specifically, after the SiC porous preform is obtained, the SiC porous preform can be loaded into a honeycomb graphite mold and then sent into a vacuum pressure aluminizing furnace, and the aluminizing furnace is vacuumized, heated, kept warm and pressurized, so that molten aluminum liquid fills pores in the SiC porous preform under the action of external pressurization force. After the pores are filled with the aluminum liquid, the aluminizing furnace stops heating and starts cooling, the molten aluminum liquid starts to solidify after the furnace is cooled, and the mold is pulled after the aluminum liquid solidifies, so that the first substrate of the aluminum carbo-silicide AlSiC composite material is obtained, as shown in FIG. 2, the first substrate 2 is made of the AlSiC composite material. Optionally, the AlSiC composite material prepared by the method has the thermal expansion coefficient of 6-14ppm/K, the thermal conductivity of more than 200W/(m.K), the bending strength of more than 300MPa and the elastic modulus of more than 80 GPa.
S30, providing a second substrate, wherein the material of the second substrate comprises copper.
S40, the first substrate and the second substrate are soldered to obtain a heat sink.
Specifically, as shown in fig. 2, the first substrate 2 and the second substrate 1 are subjected to a welding process so that the first substrate 2 and the second substrate 1 are joined together to obtain the heat radiating plate, and optionally, the first substrate and the second substrate may be subjected to a welding process by soldering or brazing.
In some examples of the present invention, as shown in fig. 2, before the first substrate 2 and the second substrate 1 are soldered, a nickel layer of a first predetermined thickness may be plated on a surface of the first substrate 2, and the second substrate 1 is soldered to the first substrate 2 through the nickel layer. Wherein the first predetermined thickness is less than or equal to 10 μm.
Specifically, after the first substrate 2 of the AlSiC composite material is prepared, a layer of nickel with a thickness of 10 μm or less is plated on the surface of the first substrate 2, and then the second substrate 1 which is cleaned is connected with the first substrate 2 by soldering or brazing. Alternatively, the second substrate 1 may be a copper layer having a thickness of 0.1 to 2mm, and may be a diamond or copper molybdenum composite.
In addition, it should be noted that the hole 4 provided on the second substrate 1 in fig. 2 is a mounting hole for fixedly mounting the heat dissipation plate, and other mounting holes on the second substrate 1 are not given reference numerals in the drawing and are also used for fixedly mounting the heat dissipation plate.
In some examples of the present invention, as shown in fig. 3, the preset mold has a plurality of bosses such that the first base plate has a plurality of grooves, and the grooves have a first preset depth; wherein, the number of second base plate is a plurality of, and it includes to carry out welding treatment to first base plate and second base plate: the plurality of second base plates and the plurality of groove bodies on the first base plate are welded in a one-to-one correspondence mode, and the second base plates are welded in the groove bodies. The value range of the first preset depth is 0.1-2 mm.
Specifically, in order to further reduce the stress, a plurality of bosses are provided in the preliminary mold, so that the first base plate 2 manufactured by the preliminary mold has a plurality of grooves. For example, as shown in fig. 3, the first base plate 2 has 3 slots 6, and optionally, the depth of the slots is set to 0.1-2 mm. Wherein the number of second base plates 5 is the same as the number of channels, in this example also 3 second base plates 5 are included. The plurality of second base plates 5 are welded to the plurality of grooves 6 in a one-to-one correspondence, and optionally, the welding method includes soldering and brazing. The first substrate 2 and the second substrate 5 may be plated with nickel first and then welded.
In addition, the chip may be soldered to the heat dissipation plate via the second substrate.
In order to determine the heat dissipation effect of the prepared heat dissipation plate, after the heat dissipation plate is prepared by the above method for preparing the heat dissipation plate, the heat dissipation effect can be compared with the heat dissipation results of other types of heat dissipation plates through simulation, as shown in fig. 4-7. It should be noted that, in the simulation result diagram, different color depths represent different temperatures.
When the heat dissipation plate is a pure AlSiC plate having a thickness of 5 mm, as shown in fig. 4, the maximum temperature of the chip is 142.8 ℃. When the heat dissipation plate is a composite plate with a 3mm AlSiC base plate covered with 2mm copper, as shown in FIG. 5, according to the simulation result of the chip junction temperature, the highest temperature of the chip is 135.91 ℃, the temperature of the composite plate is reduced by about 6.9 ℃ compared with a pure AlSiC plate, the weight of the composite plate is only 50% of that of the copper base plate, and the weight and heat conduction performance advantages are obvious. When the heat dissipation plate is a composite plate of 4mm thick AlSiC material covered with 1mm thick copper, as shown in FIG. 6, according to the simulation result of the chip junction temperature, the maximum temperature of the chip is 138 ℃, that is, the temperature of the heat dissipation plate of copper (1mm) + AlSiC (4mm) is 4.8 ℃ lower than that of the heat dissipation plate of pure AlSiC, and the weight is only 40% of the copper bottom plate, so that the weight and the heat conduction performance are relatively balanced.
Further, the copper/diamond composite material is connected with the AlSiC material (namely the heat dissipation plate prepared by the preparation method of the heat dissipation plate) by soldering or brazing, so that the stress inside the composite structure and the deformation of a system are reduced, the highest temperature of a chip is further reduced, and the long-term service life of the IGBT module is prolonged. When the heat dissipation plate is a composite plate of copper/diamond (1mm) + AlSiC (4mm), as shown in FIG. 7, according to the simulation result of the chip junction temperature, the maximum temperature of the chip is 135.46 ℃, which is 7.3 ℃ lower than the temperature of the chip mounted on the heat dissipation plate which is a pure AlSiC plate, and the weight is only 40% of that of a pure copper base plate, so that the advantages of the weight and the heat conduction performance are obvious.
In addition, the copper/molybdenum composite layer is connected with the AlSiC material by soldering or brazing, and according to the simulation result of the chip junction temperature, the stress on the chip when the composite heat dissipation plate is used is equivalent to that when the pure AlSiC material is used, but under the loading condition, the temperature of the chip is reduced by 7.4 ℃ compared with the temperature of the chip when the pure AlSiC bottom plate is used, and the maximum temperature of the chip is only 135.4 ℃.
In conclusion, the preparation method of the heat dissipation plate can improve the heat dissipation performance of the heat dissipation plate and meet the requirement of light weight of the heat dissipation plate.
Further, the present invention provides a heat dissipation plate, which is manufactured by the method for manufacturing a heat dissipation plate in the above embodiments.
According to the heat dissipation plate provided by the embodiment of the invention, through the preparation method of the heat dissipation plate provided by the embodiment, the heat dissipation performance of the heat dissipation plate can be improved, and the light weight requirement of the heat dissipation plate is considered at the same time.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
In the description of the present invention, it is to be understood that the terms "central," "longitudinal," "lateral," "length," "width," "thickness," "upper," "lower," "front," "rear," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," "clockwise," "counterclockwise," "axial," "radial," "circumferential," and the like are used in the orientations and positional relationships indicated in the drawings for convenience in describing the invention and to simplify the description, and are not intended to indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and are therefore not to be considered limiting of the invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through an intermediate. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A method for manufacturing a heat dissipation plate is characterized by comprising the following steps:
preparing a silicon carbide SiC porous prefabricated blank by using a die pressing forming method;
filling molten aluminum liquid into the pores of the SiC porous prefabricated blank by utilizing a vacuum pressure aluminizing method to obtain a first substrate;
providing a second substrate, wherein the material of the second substrate comprises copper;
and carrying out welding treatment on the first substrate and the second substrate to obtain the heat dissipation plate.
2. The method for producing a heat radiating plate according to claim 1, wherein the producing of the SiC porous preform by the press molding method comprises:
mixing SiC micro powder, water and a binder according to a preset ratio, performing extrusion granulation and drying treatment, and pouring into a preset mold;
forming the material in the preset die by using a hydraulic press to obtain a SiC porous biscuit;
and carrying out drying and sintering treatment on the SiC porous biscuit to obtain the SiC porous preform.
3. The method for manufacturing a heat radiating plate according to claim 1, wherein the first substrate and the second substrate are subjected to a welding process by soldering or brazing.
4. The method for manufacturing a heat radiating plate according to claim 1, further comprising:
before the first substrate and the second substrate are subjected to welding treatment, a nickel layer with a first preset thickness is plated on the surface of the first substrate, and the second substrate is welded with the first substrate through the nickel layer.
5. The method for manufacturing a heat dissipation plate as claimed in claim 2, wherein the predetermined mold has a plurality of bosses such that the first substrate has a plurality of grooves, and the grooves have a first predetermined depth;
the number of the second substrates is plural, and the performing of the soldering process on the first substrate and the second substrate includes:
the second base plates are welded with the groove bodies on the first base plate in a one-to-one correspondence mode, and the second base plates are welded in the groove bodies.
6. The method for producing a heat radiating plate according to claim 1, wherein the step of filling the pores of the SiC porous preform with molten aluminum by vacuum pressure aluminizing to obtain a first substrate comprises:
loading the SiC porous prefabricated blank into a honeycomb graphite mold, and placing the honeycomb graphite mold into a vacuum pressure aluminizing furnace;
filling molten aluminum liquid into the pores of the SiC porous prefabricated blank through the vacuum pressure aluminizing furnace;
and after the molten aluminum is cooled, drawing a mold to obtain the first substrate with a plurality of heat dissipation pin fins.
7. The method for manufacturing a heat dissipating plate according to claim 1, wherein the material of the second substrate further comprises diamond or a copper molybdenum composite material.
8. The method for manufacturing a heat dissipating plate according to claim 5, wherein the first predetermined depth is in a range of 0.1 to 2 mm.
9. The method for manufacturing a heat radiating plate according to claim 4, wherein the first predetermined thickness is 10 μm or less.
10. Heat distribution plate, characterized in that it is manufactured by a method for manufacturing a heat distribution plate according to any of the claims 1-9.
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| CN202010753802.5A CN114068333A (en) | 2020-07-30 | 2020-07-30 | Heat dissipation plate and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318102A (en) * | 2022-03-14 | 2022-04-12 | 泰格尔科技有限公司 | Preparation method of high-performance double-sided radiating gasket for packaging high-power IGBT module |
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2020
- 2020-07-30 CN CN202010753802.5A patent/CN114068333A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114318102A (en) * | 2022-03-14 | 2022-04-12 | 泰格尔科技有限公司 | Preparation method of high-performance double-sided radiating gasket for packaging high-power IGBT module |
| CN114318102B (en) * | 2022-03-14 | 2022-06-24 | 泰格尔科技有限公司 | Preparation method of high-performance double-sided radiating gasket for packaging high-power IGBT module |
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