CN114063390A - Preparation method of high-thickness positive photoetching film - Google Patents

Preparation method of high-thickness positive photoetching film Download PDF

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Publication number
CN114063390A
CN114063390A CN202111238821.5A CN202111238821A CN114063390A CN 114063390 A CN114063390 A CN 114063390A CN 202111238821 A CN202111238821 A CN 202111238821A CN 114063390 A CN114063390 A CN 114063390A
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Prior art keywords
wafer
photoresist
placing
rotating
baking
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Withdrawn
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CN202111238821.5A
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Chinese (zh)
Inventor
殷岚勇
施元军
石磊
张宜山
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Suzhou Jingsheng Micro Nano Semiconductor Technology Co ltd
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Suzhou Jingsheng Micro Nano Semiconductor Technology Co ltd
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Priority to CN202111238821.5A priority Critical patent/CN114063390A/en
Publication of CN114063390A publication Critical patent/CN114063390A/en
Withdrawn legal-status Critical Current

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/161—Coating processes; Apparatus therefor using a previously coated surface, e.g. by stamping or by transfer lamination
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/162—Coating on a rotating support, e.g. using a whirler or a spinner
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16—Coating processes; Apparatus therefor
    • G03F7/168—Finishing the coated layer, e.g. drying, baking, soaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/38—Treatment before imagewise removal, e.g. prebaking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/40—Treatment after imagewise removal, e.g. baking
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70491—Information management, e.g. software; Active and passive control, e.g. details of controlling exposure processes or exposure tool monitoring processes
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
    • G03F7/70558—Dose control, i.e. achievement of a desired dose

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

The invention relates to a preparation method of a high-thickness positive photoetching film, which comprises the following steps: (1) a, pouring the newly opened positive photoresist into a mixing vessel, adding the adhesive, and stirring and fully mixing; b. placing the stirred photoresist into a vacuum chamber, vacuumizing and standing for 2 hours; c. after the vacuumizing is finished, placing the photoresist in a dry, shady and cool dark area for standing; (2) preparing a photoresist film, pretreating wafer, coating in a rotating mode, c, soft baking, d, carrying out para-position exposure, e, baking after exposure, f, developing, g and hardening. The invention greatly improves the thickness of the photoresist film on the premise of not influencing the basic characteristics of the positive photoresist, simultaneously effectively shortens the replacement period and improves the working efficiency compared with the replacement of the photoresist raw material, and simultaneously the cost is not greatly increased.

Description

Preparation method of high-thickness positive photoetching film
Technical Field
The invention relates to the technical field of preparation of photoresist films, in particular to a preparation method of a high-thickness positive photoresist film.
Background
The positive photoresist has better resolution, and is widely applied to various photoetching research and development designs. With the current technical development, the whole photoetching process is fixed and matched, and the existing positive photoresist film preparation process cannot reach the required film thickness. The step of coating the photoresist is a starting point of the whole photoetching process, namely, the step of pulling the whole body, and the aim of improving the thickness of the photoresist film on the premise of not changing the photoetching collagen material is mainly researched. The photoresist film thickness can be improved by adjusting and optimizing the recipe of the gluing process, but the method has limited lifting amplitude and great influence on the uniformity of the film thickness, and cannot be suitable for special requirements. For some special designs, negative photoresists can be made with high thickness but cannot be used because of resolution issues.
Disclosure of Invention
The invention aims to provide a preparation method of a high-thickness positive photoresist film, which is used for solving the problem that the high-thickness positive photoresist film cannot be prepared by the process method in the prior art.
The invention provides a preparation method of a high-thickness positive photoetching film, which comprises the following steps:
(1) photoresist preparation
a. Pouring the newly opened positive photoresist into a mixing vessel, adding the adhesive, and stirring and fully mixing;
b. placing the stirred photoresist into a vacuum chamber, vacuumizing and standing for 2 hours;
c. after the vacuumizing is finished, placing the photoresist in a dry, shady and cool dark area for standing;
(2) photoresist film preparation
a. wafer pretreatment: cleaning the wafer surface to be operated and coating a layer of adhesion promoter on the wafer surface;
b. spin coating: coating a photoresist film on the surface of the wafer after pretreatment by using the photoresist prepared in the step (1);
c. soft baking: taking down the wafer after the spin coating, placing the wafer on a horizontal heating plate for baking, removing the solvent in the photoresist, and curing the photoresist film, wherein the baking temperature is 100 ℃ and the baking time is 300 s;
d. and (3) alignment exposure: placing the wafer after the soft baking on an alignment operation platform of an exposure machine, and carrying out exposure after the alignment is finished, wherein the exposure parameter selects a softcontact mode, and the exposure energy is 1200 mj;
e. baking after exposure: taking the wafer after the exposure out of the exposure machine, and placing the wafer on a horizontal heating plate for baking at the baking temperature of 110 ℃ for 180 s;
f. and (3) developing: vertically placing the wafer in a developing basket, and then placing the wafer on an arm of a developing tank for developing;
g. hardening the film: transferring the developed wafer into a Teflon flower basket, placing the wafer into a film baking oven, and baking for 1.5h at 150 ℃.
Further, the mass ratio of the positive photoresist to the adhesive in the step (1) a is 1: 0.2005.
further, the specific stirring method of "stirring and fully mixing after adding the binder" in the step (1) a is magnetic stirring and mixing, wherein the stirring speed is 500rpm, and the stirring time is 15 min.
Further, the photoresist is kept standing in the step (1) c until the viscosity is 790-810 cP.
Further, the step (2) a of "cleaning the wafer surface to be worked" is specifically as follows: and (2) placing the wafer to be operated on a horizontal rotating platform, rotating at a low speed of 50rpm/s, injecting 20ml of IPA solution into the central area of the surface of the wafer, increasing the rotating speed to 800rpm/s, uniformly covering the IPA solution on the surface of the wafer after 5s, increasing the rotating speed to 2000rpm/s, rotating at a high speed for 5s, throwing away the IPA solvent on the surface of the wafer, and repeating the process again to finish the cleaning of the surface of the wafer.
Further, the step (2) a of "coating a layer of adhesion promoter on the wafer surface" is specifically as follows: rotating the wafer at a low speed of 50rpm/s, injecting 10ml of adhesion promoter into the central area of the surface of the wafer, increasing the rotating speed to 800rpm/s, uniformly covering the adhesion promoter solution on the surface of the wafer after 5s, increasing the rotating speed to 2000rpm/s, rotating at a high speed for 20s, and throwing off the redundant adhesion promoter solution on the surface of the wafer.
Further, the step (2) b of "spin coating" specifically includes: and (2) placing the pretreated wafer on a horizontal rotating platform, rotating at a low speed of 50rpm/s, injecting 8ml of photoresist solvent prepared in the step (1) into the central area of the surface of the wafer, then increasing the rotating speed to 800rpm/s, rotating at a constant speed for 10s, after the photoresist completely covers the surface of the wafer, increasing the rotating speed to 1400 and 2000rpm/s, rotating at a high speed for 30s to uniformly coat the photoresist on the surface of the wafer, and then throwing away the redundant photoresist stacked on the edge of the wafer at an instantaneous high speed (3000rpm/s) by the action of centrifugal force.
Further, the developing parameters in the step (2) f are as follows: shaking at 34 times/min, amplitude of 30mm, circulation at 18L/min, temperature of 20-25 deg.C, and time of 600 s.
The technical scheme of the invention has the beneficial effects that:
the invention greatly improves the thickness of the photoresist film on the premise of not influencing the basic characteristics of the positive photoresist, simultaneously effectively shortens the replacement period and improves the working efficiency compared with the replacement of the photoresist raw material, and simultaneously the cost is not greatly increased.
Drawings
FIG. 1 is a graph showing the relationship between the thickness of a positive photoresist film and the spin rate of a spin coater according to the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention.
The embodiment is a preparation method of a high-thickness positive photoetching film, which comprises the following steps:
(1) photoresist preparation
a. Pouring the newly opened positive photoresist into a mixing vessel, adding the adhesive, and then stirring and fully mixing, wherein the stirring method is magnetic stirring and mixing, the stirring speed is 500rpm, and the stirring time is 15min, wherein the mass ratio of the positive photoresist to the adhesive is 1: 0.2005, respectively;
b. placing the stirred photoresist into a vacuum chamber, vacuumizing and standing for 2 hours;
c. after the vacuum pumping is finished, placing the photoresist in a dry, shady and cool dark area, and standing to improve the viscosity of the photoresist to 790 and 810 cP;
(2) photoresist film preparation
a. wafer pretreatment: cleaning the wafer surface to be operated and coating a layer of adhesion promoter on the wafer surface;
b. spin coating: coating a photoresist film on the surface of the wafer after pretreatment by using the photoresist prepared in the step (1);
c. soft baking: taking down the wafer after the spin coating, placing the wafer on a horizontal heating plate for baking, removing the solvent in the photoresist, and curing the photoresist film, wherein the baking temperature is 100 ℃ and the baking time is 300 s;
d. and (3) alignment exposure: placing the wafer after the soft baking on an alignment operation platform of an exposure machine, and carrying out exposure after the alignment is finished, wherein the exposure parameter selects a softcontact mode, and the exposure energy is 1200 mj;
e. baking after exposure: taking the wafer after the exposure out of the exposure machine, and placing the wafer on a horizontal heating plate for baking at the baking temperature of 110 ℃ for 180 s;
f. and (3) developing: vertically placing the wafer in a developing basket, then placing the wafer on an arm of a developing tank, and developing, wherein the developing parameters are as follows: shaking for 34 times/min, with amplitude of 30mm, circulating for 18L/min, temperature of 20-25 deg.C, and time of 600 s;
g. hardening the film: transferring the developed wafer into a Teflon flower basket, placing the wafer into a film baking oven, and baking for 1.5h at 150 ℃.
Specifically, the step (2) a of "cleaning the wafer surface to be worked" is specifically as follows: and (2) placing the wafer to be operated on a horizontal rotating platform, rotating at a low speed of 50rpm/s, injecting 20ml of IPA solution into the central area of the surface of the wafer, increasing the rotating speed to 800rpm/s, uniformly covering the IPA solution on the surface of the wafer after 5s, increasing the rotating speed to 2000rpm/s, rotating at a high speed for 5s, throwing away the IPA solvent on the surface of the wafer, and repeating the process again to finish the cleaning of the surface of the wafer.
Specifically, the step (2) a of coating a layer of adhesion promoter on the wafer surface includes: rotating the wafer at a low speed of 50rpm/s, injecting 10ml of adhesion promoter into the central area of the surface of the wafer, increasing the rotating speed to 800rpm/s, uniformly covering the adhesion promoter solution on the surface of the wafer after 5s, increasing the rotating speed to 2000rpm/s, rotating at a high speed for 20s, and throwing off the redundant adhesion promoter solution on the surface of the wafer.
Specifically, the step (2) b of "spin coating" specifically includes: placing the pretreated wafer on a horizontal rotating platform, rotating at a low speed of 50rpm/s, injecting 8ml of photoresist solvent prepared in the step (1) into the central area of the surface of the wafer, then increasing the rotating speed to 800rpm/s, rotating at a constant speed for 10s, after the photoresist completely covers the surface of the wafer, increasing the photoresist rotation speed to 1400-2000rpm/s, rotating an appropriate photoresist rotation speed according to the thickness of a required photoresist film, wherein the relationship between the photoresist rotation speed and the thickness of the photoresist film is shown in figure 1, rotating at a high speed for 30s to uniformly coat the photoresist on the surface of the wafer, and then throwing off the redundant photoresist stacked at the edge of the wafer by the action of centrifugal force at an instant high speed (3000 rpm/s).
In summary, the invention greatly increases the thickness of the photoresist film without affecting the basic characteristics of the positive photoresist, and simultaneously, compared with the replacement of the photoresist raw material, the invention effectively reduces the replacement period, improves the working efficiency, and simultaneously, the cost is not greatly increased.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.

Claims (9)

1. A preparation method of a high-thickness positive photoetching film is characterized by comprising the following steps:
(1) photoresist preparation
a. Pouring the newly opened positive photoresist into a mixing vessel, adding the adhesive, and stirring and fully mixing;
b. placing the stirred photoresist into a vacuum chamber, vacuumizing and standing for 2 hours;
c. after the vacuumizing is finished, placing the photoresist in a dry, shady and cool dark area for standing;
(2) photoresist film preparation
a. wafer pretreatment: cleaning the wafer surface to be operated and coating a layer of adhesion promoter on the wafer surface;
b. spin coating: coating a photoresist film on the surface of the wafer after pretreatment by using the photoresist prepared in the step (1);
c. soft baking: taking down the wafer after the spin coating, placing the wafer on a horizontal heating plate for baking, removing the solvent in the photoresist, and curing the photoresist film, wherein the baking temperature is 100 ℃ and the baking time is 300 s;
d. and (3) alignment exposure: placing the wafer after the soft baking on an alignment operation platform of an exposure machine, and carrying out exposure after the alignment is finished, wherein the exposure parameter selects a softcontact mode, and the exposure energy is 1200 mj;
e. baking after exposure: taking the wafer after the exposure out of the exposure machine, and placing the wafer on a horizontal heating plate for baking at the baking temperature of 110 ℃ for 180 s;
f. and (3) developing: vertically placing the wafer in a developing basket, and then placing the wafer on an arm of a developing tank for developing;
g. hardening the film: transferring the developed wafer into a Teflon flower basket, placing the wafer into a film baking oven, and baking for 1.5h at 150 ℃.
2. The method for preparing a high thickness positive resist film according to claim 1, wherein the mass ratio of the positive resist to the binder in step (1) a is 1: 0.2005.
3. the method for preparing a positive photoresist film with high thickness according to claim 1, wherein the specific stirring method of "stirring and mixing well after adding the binder" in step (1) a is magnetic stirring mixing, the stirring speed is 500rpm, and the stirring time is 15 min.
4. The method for preparing a high thickness positive photoresist film according to claim 1, wherein the photoresist in step (1) c is left to stand until the viscosity is 790-810 cP.
5. The method for preparing a high thickness positive photoresist film according to claim 1, wherein the step (2) a of "cleaning the wafer surface to be worked" is specifically: and (2) placing the wafer to be operated on a horizontal rotating platform, rotating at a low speed of 50rpm/s, injecting 20ml of IPA solution into the central area of the surface of the wafer, increasing the rotating speed to 800rpm/s, uniformly covering the IPA solution on the surface of the wafer after 5s, increasing the rotating speed to 2000rpm/s, rotating at a high speed for 5s, throwing away the IPA solvent on the surface of the wafer, and repeating the process again to finish the cleaning of the surface of the wafer.
6. The method for preparing a high thickness positive photoresist film according to claim 1, wherein the step (2) a "coating a layer of adhesion promoter on the wafer surface" is specifically: rotating the wafer at a low speed of 50rpm/s, injecting 10ml of adhesion promoter into the central area of the surface of the wafer, increasing the rotating speed to 800rpm/s, uniformly covering the adhesion promoter solution on the surface of the wafer after 5s, increasing the rotating speed to 2000rpm/s, rotating at a high speed for 20s, and throwing off the redundant adhesion promoter solution on the surface of the wafer.
7. The method for preparing a high-thickness positive photolithographic thin film as defined in claim 1, wherein the "spin coating" of step (2) b is specifically: and (2) placing the pretreated wafer on a horizontal rotating platform, rotating at a low speed of 50rpm/s, injecting 8ml of photoresist solvent prepared in the step (1) into the central area of the surface of the wafer, then increasing the rotating speed to 800rpm/s, rotating at a constant speed for 10s, after the photoresist completely covers the surface of the wafer, increasing the rotating speed to 1400 and 2000rpm/s, rotating at a high speed for 30s to uniformly coat the photoresist on the surface of the wafer, and then throwing away the redundant photoresist stacked on the edge of the wafer at an instantaneous high speed (3000rpm/s) by the action of centrifugal force.
8. The method for preparing a high thickness positive resist film according to claim 1, wherein the developing parameters in step (2) f are: shaking at 34 times/min, amplitude of 30mm, circulation at 18L/min, temperature of 20-25 deg.C, and time of 600 s.
9. The method for preparing a high thickness positive resist film according to claim 1, further comprising a step of inspecting after step (2) g: and (3) taking out the wafer, visually checking whether the wafer surface has defects, measuring the thickness of the prepared photoetching film through a probe type step instrument, and then confirming whether the pattern size exceeds the specification through an optical microscope, and confirming alignment deviation and developing effect.
CN202111238821.5A 2021-10-25 2021-10-25 Preparation method of high-thickness positive photoetching film Withdrawn CN114063390A (en)

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CN202111238821.5A CN114063390A (en) 2021-10-25 2021-10-25 Preparation method of high-thickness positive photoetching film

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Application Number Priority Date Filing Date Title
CN202111238821.5A CN114063390A (en) 2021-10-25 2021-10-25 Preparation method of high-thickness positive photoetching film

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CN114063390A true CN114063390A (en) 2022-02-18

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Application publication date: 20220218