CN114040559A - GIL three-binding-point surface plasma processing device - Google Patents
GIL three-binding-point surface plasma processing device Download PDFInfo
- Publication number
- CN114040559A CN114040559A CN202111319843.4A CN202111319843A CN114040559A CN 114040559 A CN114040559 A CN 114040559A CN 202111319843 A CN202111319843 A CN 202111319843A CN 114040559 A CN114040559 A CN 114040559A
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- Prior art keywords
- gil
- surface plasma
- junction surface
- triple junction
- treatment device
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- 239000012212 insulator Substances 0.000 claims abstract description 6
- 239000004020 conductor Substances 0.000 claims abstract description 4
- 239000007789 gas Substances 0.000 claims description 23
- 238000009832 plasma treatment Methods 0.000 claims description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical group [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 239000004677 Nylon Substances 0.000 claims description 4
- 229920001778 nylon Polymers 0.000 claims description 4
- 239000010453 quartz Substances 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 239000010949 copper Substances 0.000 claims description 3
- 238000009413 insulation Methods 0.000 description 11
- 230000005684 electric field Effects 0.000 description 6
- 239000007787 solid Substances 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000002131 composite material Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000004698 Polyethylene Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000009616 inductively coupled plasma Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32174—Circuits specially adapted for controlling the RF discharge
- H01J37/32183—Matching circuits
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/26—Plasma torches
- H05H1/30—Plasma torches using applied electromagnetic fields, e.g. high frequency or microwave energy
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
The invention discloses a GIL three-joint surface plasma processing device, wherein the tip of a plasma rectangular tube is aligned to the surface of the GIL three-joint at the contact joint of a GIL insulator, a conductor and gas, a gas cylinder is connected with the tail end of the plasma rectangular tube opposite to the tip through a gas pipe, a discharge electrode is circumferentially sleeved on the plasma rectangular tube, a matcher is connected with the two ends of the discharge electrode, and a radio frequency power supply is connected with the matcher to form a plasma generating circuit.
Description
Technical Field
The invention relates to the technical field of GIS basin-type insulator insulation, in particular to a GIL three-combination-point surface plasma processing device.
Background
Under the action of a uniform or slightly non-uniform electric field, the electric field near the interface of two different media of the composite insulating structure is enhanced. This theory is actually the intrinsic reason why discharges tend to occur at the interface of different media in composite insulation structures. It is generally believed that the gas gap with the solid insulating medium results in a reduction in the breakdown strength of the overall insulating structure due to dielectric creeping discharge.
The inherent causes of the generation of creeping discharge are: the dielectric constants of gas and solid insulation are different, and the electric field on the surface of the solid insulation is distorted under the action of the vertical component of the electric field, so that the local electric field on the surface of the solid insulation is enhanced, and gas discharge at three joint points is caused. The main optimization method at present is to improve the electric field structure at the junction and fail to fundamentally improve the insulating capability of the three junctions.
The above information disclosed in this background section is only for enhancement of understanding of the background of the invention and therefore it may contain information that does not form the prior art that is well known to those of ordinary skill in the art.
Disclosure of Invention
The invention aims to provide a GIL triple-junction surface plasma processing device, which can obviously improve the insulation of the GIL triple-junction.
In order to achieve the above purpose, the invention provides the following technical scheme:
the invention relates to a GIL three-binding-point surface plasma processing device, which comprises,
the tip of the plasma rectangular tube is aligned with the surface of the GIL triple junction at the junction of the GIL insulator, the conductor and the gas contact,
a gas cylinder connected to a tail end of the plasma rectangular tube opposite to the tip end via a gas pipe,
a discharge electrode circumferentially sleeved on the plasma rectangular tube,
a matching unit connected to both ends of the discharge electrode,
and the radio frequency power supply is connected with the matcher to form a plasma generating circuit.
In the GIL three-combination-point surface plasma treatment device, the plasma torch tube is a quartz torch tube.
In the GIL three-binding-point surface plasma treatment device, the diameter of the plasma torch tube is 40 mm.
In the GIL three-binding-point surface plasma treatment device, the air pipe is a nylon air pipe.
In the GIL three-binding-point surface plasma treatment device, the outer diameter of the air pipe is 6 mm.
In the GIL three-binding-point surface plasma processing device, the gas cylinder is an argon gas cylinder.
In the GIL triple-junction surface plasma processing device, the discharge electrode is a copper tube wound coil.
In the GIL three-binding-point surface plasma processing device, the number of the discharge electrode turns is 3.
In the GIL three-binding-point surface plasma processing device, the radio frequency power supply is a 13.56MHz radio frequency power supply, and the rated power is 1000W.
In the GIL three-junction surface plasma processing device, the matcher comprises an L-shaped matching network, and the rated power is 1500W.
In the technical scheme, the surface plasma processing device for the three binding points of the GIL, provided by the invention, has the following beneficial effects: the GIL three-joint surface plasma treatment device can realize plasma treatment on the surface of the GIL three-joint, improve the surface insulation characteristic of the GIL three-joint and improve the insulation strength of the GIL three-joint.
Drawings
In order to more clearly illustrate the embodiments of the present application or technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings can be obtained by those skilled in the art according to the drawings.
FIG. 1 is a schematic diagram of an embodiment of a GIL triple junction surface plasma processing apparatus;
FIG. 2 is a schematic structural diagram of an embodiment of a GIL triple junction surface plasma processing apparatus.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention more clear, the technical solutions of the embodiments of the present invention will be described in detail and completely with reference to fig. 1 to 2 of the drawings of the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Thus, the following detailed description of the embodiments of the present invention, presented in the figures, is not intended to limit the scope of the invention, as claimed, but is merely representative of selected embodiments of the invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
It should be noted that: like reference numbers and letters refer to like items in the following figures, and thus, once an item is defined in one figure, it need not be further defined and explained in subsequent figures.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the equipment or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention.
Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In the present invention, unless otherwise expressly stated or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can, for example, be fixedly connected, detachably connected, or integrally formed; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In the present invention, unless otherwise expressly stated or limited, "above" or "below" a first feature means that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact with each other via another feature therebetween. Also, the first feature being "on," "above" and "over" the second feature includes the first feature being directly on and obliquely above the second feature, or merely indicating that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature includes the first feature being directly under and obliquely below the second feature, or simply meaning that the first feature is at a lesser elevation than the second feature.
In order to make the technical solutions of the present invention better understood, those skilled in the art will now describe the present invention in further detail with reference to the accompanying drawings.
In one embodiment, as shown in fig. 1 to 2, the GIL triple junction surface plasma treatment apparatus includes,
the tip of the plasma rectangular tube 1 is aligned with the surface of the GIL triple junction at the junction of the GIL insulator, the conductor and the gas contact,
a gas cylinder 3 connected with the tail end of the plasma rectangular tube 1 opposite to the tip end through a gas pipe 2,
a discharge electrode 4 circumferentially sleeved on the plasma rectangular tube 1,
a matching unit 5 connected to both ends of the discharge electrode 4,
and a radio frequency power supply 6 connected to the matching unit 5 to constitute a plasma generating circuit.
In the preferred embodiment of the GIL triple junction surface plasma treatment device, the plasma torch tube is a quartz torch tube. Is different from nylon torch tube and polyethylene torch tube in that the rectangular tube is overheated to 600 deg.C to melt and deform during the treatment process, and the melting point of quartz tube is 1750 deg.C.
In the preferred embodiment of the GIL triple junction surface plasma treatment device, the diameter of the plasma torch is 40 mm. The diameter of the selected torch tube is suitable for surface treatment of three combined points of GIL, and the treatment efficiency is halved when the diameter is reduced by 5 mm.
In the preferred embodiment of the GIL triple junction surface plasma treatment device, the gas pipe 2 is a nylon gas pipe 2.
In the preferred embodiment of the GIL triple junction surface plasma treatment device, the outer diameter of the gas pipe 2 is 6 mm.
In the preferred embodiment of the GIL triple junction surface plasma treatment device, the gas cylinder 3 is an argon gas cylinder 3.
In the preferred embodiment of the GIL triple-junction surface plasma treatment device, the discharge electrode 4 is a coil wound by a copper tube with a diameter of 3 mm. Different from the 5mm diameter copper ring discharge electrode 4 in fig. 2, the treatment efficiency can be improved by 50%.
In the preferred embodiment of the GIL triple junction surface plasma processing apparatus, the number of turns of the discharge electrode 4 is 3.
In the preferred embodiment of the GIL triple junction surface plasma processing apparatus, the rf power supply 6 is a 13.56MHz rf power supply 6, and the rated power is 1000W.
In the preferred embodiment of the GIL triple junction surface plasma processing apparatus, the matcher 5 includes an L-shaped matching network, and the rated power is 1500W.
In one embodiment, a GIL triple junction surface plasma processing apparatus includes: the plasma torch comprises a plasma torch tube 1, an air tube 2, an air bottle 3, a discharge electrode 4, a radio frequency power supply 6 and a matcher 5. The tail end of the plasma torch tube is connected with an air tube 2, and the air tube 2 is connected with an air bottle 3. The outside of the torch tube is sleeved with a discharge electrode 4, the coil is connected to a matcher 5, and the matcher 5 is connected to a radio frequency power supply 6 to form a plasma generating circuit.
In one embodiment, a GIL triple junction surface plasma processing apparatus includes: a plasma rectangular tube 1; an air pipe 2; a gas cylinder 3; a discharge electrode 4; a matcher 5; a radio frequency power supply 6.
The tip of the plasma torch tube 1 is aligned with the surface of the three combination points of GIL, and the tail end of the torch tube 1 is connected with the air tube 2. One end of the air pipe 2 is connected with the torch pipe 1, and the other end is connected with the air bottle 3. The outside of the torch tube 1 is sleeved with a discharge electrode 4 for generating inductively coupled plasma, and two ends of the coil are connected to a matcher 5. The input end of the matcher 5 is connected with the power output end of the radio frequency power supply, and transmits power to the discharge electrode. The plasma treatment method can realize plasma treatment on the surface of the three bonding points of the GIL, improve the surface insulation characteristic of the three bonding points of the GIL and improve the insulation strength of the three bonding points of the GIL.
Industrial applicability
The GIL triple-junction surface plasma treatment device can be used in GIS basin-type insulator insulation.
Finally, it should be noted that: the embodiments described are only a part of the embodiments of the present application, and not all embodiments, and all other embodiments obtained by those skilled in the art without making creative efforts based on the embodiments in the present application belong to the protection scope of the present application.
While certain exemplary embodiments of the present invention have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that the described embodiments may be modified in various different ways without departing from the spirit and scope of the invention. Accordingly, the drawings and description are illustrative in nature and should not be construed as limiting the scope of the invention.
Claims (10)
1. A GIL three-binding-point surface plasma processing device is characterized by comprising,
the tip of the plasma rectangular tube is aligned with the surface of the GIL triple junction at the junction of the GIL insulator, the conductor and the gas contact,
a gas cylinder connected to a tail end of the plasma rectangular tube opposite to the tip end via a gas pipe,
a discharge electrode circumferentially sleeved on the plasma rectangular tube,
a matching unit connected to both ends of the discharge electrode,
and the radio frequency power supply is connected with the matcher to form a plasma generating circuit.
2. A GIL triple junction surface plasma treatment device according to claim 1, wherein said plasma torch is preferably a quartz torch.
3. The GIL triple junction surface plasma treatment device according to claim 1, wherein said torch tube has a diameter of 40 mm.
4. The GIL triple junction surface plasma treatment device according to claim 1, wherein said air pipe is a nylon air pipe.
5. The GIL triple junction surface plasma treatment device according to claim 1, wherein said gas pipe has an outer diameter of 6 mm.
6. The GIL triple junction surface plasma treatment device according to claim 1, wherein said gas cylinder is an argon gas cylinder.
7. The GIL triple junction surface plasma treatment device according to claim 1, wherein said discharge electrode is a copper tube wound coil.
8. The GIL triple junction surface plasma processing apparatus according to claim 1, wherein said number of discharge electrode turns is 3.
9. The GIL triple junction surface plasma processing apparatus of claim 1, wherein said RF power source is a 13.56MHz RF power source rated at 1000W.
10. The GIL triple junction surface plasma processing apparatus as claimed in claim 1, wherein said matching unit comprises an L-shaped matching network with a power rating of 1500W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111319843.4A CN114040559A (en) | 2021-11-09 | 2021-11-09 | GIL three-binding-point surface plasma processing device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111319843.4A CN114040559A (en) | 2021-11-09 | 2021-11-09 | GIL three-binding-point surface plasma processing device |
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| Publication Number | Publication Date |
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| CN114040559A true CN114040559A (en) | 2022-02-11 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111319843.4A Pending CN114040559A (en) | 2021-11-09 | 2021-11-09 | GIL three-binding-point surface plasma processing device |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105761857A (en) * | 2016-02-24 | 2016-07-13 | 西安交通大学 | Method for fluorinating insulator through use of CF4 plasma |
| CN106252191A (en) * | 2016-08-02 | 2016-12-21 | 中国科学院长春光学精密机械与物理研究所 | Exchangeable nozzle ICP generating means in plasma chemistry etching apparatus |
| CN107437529A (en) * | 2017-09-05 | 2017-12-05 | 睿力集成电路有限公司 | A kind of semiconductor structure and its manufacture method |
| CN109659102A (en) * | 2018-12-29 | 2019-04-19 | 天津大学 | GIL insulator flashover voltage improving method based on gas-solid interface electric field optimization |
| CN209183501U (en) * | 2018-09-25 | 2019-07-30 | 南方科技大学 | Single crystal material polishing device based on inductively coupled plasma |
| CN110572951A (en) * | 2019-09-12 | 2019-12-13 | 皆利士多层线路版(中山)有限公司 | Method for improving surface insulativity of green oil of circuit board and application |
| CN113103076A (en) * | 2021-04-13 | 2021-07-13 | 霖鼎光学(上海)有限公司 | Wafer polishing device based on inductively coupled plasma |
-
2021
- 2021-11-09 CN CN202111319843.4A patent/CN114040559A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105761857A (en) * | 2016-02-24 | 2016-07-13 | 西安交通大学 | Method for fluorinating insulator through use of CF4 plasma |
| CN106252191A (en) * | 2016-08-02 | 2016-12-21 | 中国科学院长春光学精密机械与物理研究所 | Exchangeable nozzle ICP generating means in plasma chemistry etching apparatus |
| CN107437529A (en) * | 2017-09-05 | 2017-12-05 | 睿力集成电路有限公司 | A kind of semiconductor structure and its manufacture method |
| CN209183501U (en) * | 2018-09-25 | 2019-07-30 | 南方科技大学 | Single crystal material polishing device based on inductively coupled plasma |
| CN109659102A (en) * | 2018-12-29 | 2019-04-19 | 天津大学 | GIL insulator flashover voltage improving method based on gas-solid interface electric field optimization |
| CN110572951A (en) * | 2019-09-12 | 2019-12-13 | 皆利士多层线路版(中山)有限公司 | Method for improving surface insulativity of green oil of circuit board and application |
| CN113103076A (en) * | 2021-04-13 | 2021-07-13 | 霖鼎光学(上海)有限公司 | Wafer polishing device based on inductively coupled plasma |
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Application publication date: 20220211 |