CN114039582A - Nanosecond high-voltage pulse generator and high-voltage probe rise time tracing method - Google Patents
Nanosecond high-voltage pulse generator and high-voltage probe rise time tracing method Download PDFInfo
- Publication number
- CN114039582A CN114039582A CN202111354921.4A CN202111354921A CN114039582A CN 114039582 A CN114039582 A CN 114039582A CN 202111354921 A CN202111354921 A CN 202111354921A CN 114039582 A CN114039582 A CN 114039582A
- Authority
- CN
- China
- Prior art keywords
- voltage
- module
- direct
- circuit
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000523 sample Substances 0.000 title claims abstract description 40
- 238000000034 method Methods 0.000 title claims abstract description 13
- 238000005259 measurement Methods 0.000 claims abstract description 17
- 230000002238 attenuated effect Effects 0.000 claims abstract description 4
- 230000001360 synchronised effect Effects 0.000 claims description 23
- 238000001514 detection method Methods 0.000 claims description 17
- 238000002955 isolation Methods 0.000 claims description 12
- 239000003990 capacitor Substances 0.000 claims description 10
- 238000010521 absorption reaction Methods 0.000 claims description 7
- 230000002093 peripheral effect Effects 0.000 claims description 7
- 230000008878 coupling Effects 0.000 claims description 6
- 238000010168 coupling process Methods 0.000 claims description 6
- 238000005859 coupling reaction Methods 0.000 claims description 6
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 4
- BULVZWIRKLYCBC-UHFFFAOYSA-N phorate Chemical compound CCOP(=S)(OCC)SCSCC BULVZWIRKLYCBC-UHFFFAOYSA-N 0.000 claims description 3
- 230000002441 reversible effect Effects 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 8
- 238000011161 development Methods 0.000 description 5
- 230000000670 limiting effect Effects 0.000 description 3
- 239000011521 glass Substances 0.000 description 2
- 238000011897 real-time detection Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002829 reductive effect Effects 0.000 description 1
- 238000009877 rendering Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K7/00—Modulating pulses with a continuously-variable modulating signal
- H03K7/08—Duration or width modulation ; Duty cycle modulation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/04—Modifications for accelerating switching
- H03K17/041—Modifications for accelerating switching without feedback from the output circuit to the control circuit
- H03K17/0416—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/04163—Modifications for accelerating switching without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0814—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit
- H03K17/08142—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the output circuit in field-effect transistor switches
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Landscapes
- Measurement Of Current Or Voltage (AREA)
Abstract
The invention discloses a nanosecond high-voltage pulse generator and a method for tracing the rising time of a high-voltage probe, which comprise a system power supply, an auxiliary power supply, a single chip microcomputer, a display control module, a direct-current high-voltage driving circuit, a direct-current high-voltage switching circuit, a discharge protection circuit and a feedback protection circuit, wherein the system power supply is connected with the auxiliary power supply; the invention can generate adjustable high-voltage pulse with rise time tr =1.4ns and amplitude value up to 3kV, the high-voltage probe is attenuated and then connected to an oscilloscope with bandwidth more than twice as large as that of the high-voltage probe, a complete waveform is acquired, the rise time t is measured by using the measurement function of the oscilloscope, if t = tr x (1 +/-10%) ns, a measurement system consisting of the oscilloscope and the high-voltage probe can accurately acquire pulse signals with the rise time t more than or equal to tr (ns), and therefore, the bandwidth B of the high-voltage probe is proved to be more than or equal to 350/tr, and the tracing of the bandwidth of the high-voltage probe is realized.
Description
Technical Field
The invention relates to the technical field of high-voltage pulse output, in particular to a nanosecond high-voltage pulse generator and a high-voltage probe rising time tracing method.
Background
In recent years, as high-voltage pulse power supplies are widely applied to various fields such as industry, medical treatment, military, measurement and the like, the scientific and technological development in the fields has higher and higher requirements on the high-voltage pulse power supplies, and accurate measurement of waveform parameters such as rise time, pulse width, amplitude and the like becomes a key factor for restricting the development of the high-voltage pulse power supply development technology.
At present, a common method for measuring high-voltage pulse waveform parameters is to form a measurement system by a high-voltage probe and an oscilloscope, collect waveforms and then measure the waveforms, and in order to ensure the accuracy of measurement results, firstly, the collection system needs to be ensured to have enough bandwidth to collect the generated high-voltage pulses without distortion, so that the rise time of the measurement system needs to be calibrated. At present, the calibration of the rise time is a 1V fast edge generator, which is inconsistent with the mode of collecting the high-voltage pulse after attenuation in actual measurement, so that the measurement repeatability is poor when the rise time of the high-voltage pulse signal is measured, the uncertainty is large, and the measurement accuracy is difficult to guarantee.
Disclosure of Invention
The invention aims to provide a nanosecond high-voltage pulse generator and a method for tracing the rising time of a high-voltage probe, which can generate high-voltage pulses with the rising time of 1.4ns and the amplitude of 3kV, solve the problem of calibration of an oscilloscope and the high-voltage probe in an actual working state, effectively solve the problem of tracing the magnitude of the high-voltage probe in China and solve the problem of restricting the development of the high-voltage pulse source.
The technical scheme adopted by the invention is as follows:
a nanosecond high-voltage pulse generator comprises a system power supply, an auxiliary power supply, a single chip microcomputer, a display control module, a direct-current high-voltage driving circuit, a direct-current high-voltage switching circuit, a discharge protection circuit and a feedback protection circuit; the system power supply is communicated with the auxiliary power supply, the single chip microcomputer and the direct-current high-voltage driving circuit and supplies power, and the single chip microcomputer is respectively communicated with the display control module, the direct-current high-voltage driving circuit, the direct-current high-voltage switching circuit and the feedback protection circuit; the output end of the auxiliary power supply is connected with the power supply end of the direct-current high-voltage switch circuit, the opening controlled end of the direct-current high-voltage switch circuit is connected with the output end of the direct-current high-voltage drive circuit, the direct-current high-voltage switch circuit is connected with the single chip microcomputer through the feedback protection circuit, and the direct-current high-voltage switch circuit is further connected with the discharge protection circuit.
The direct-current high-voltage driving circuit comprises a TTL signal driving module, a controlled end of the TTL signal driving module is connected with the single chip microcomputer, and an output end of the TTL signal driving module is connected with a starting controlled end of the direct-current high-voltage switching circuit.
The direct-current high-voltage switch circuit comprises a PWM modulation driving module, a PWM high-voltage preceding-stage driving module, a rectification detection module, a rectification voltage-multiplying module, a high-voltage switch module and a direct-current high-voltage pulse output module which are sequentially and electrically connected, wherein the PWM high-voltage preceding-stage driving module, the rectification detection module, the rectification voltage-multiplying module and the high-voltage switch module are respectively connected with a feedback protection circuit, the rectification detection module is connected with a single chip microcomputer through a check and division detection module, the rectification voltage-multiplying module is connected with a discharge protection circuit, and the controlled end of the high-voltage switch module is connected with the output end of a TTL signal driving module.
The high-voltage switch module consists of a high-voltage pulse module and a peripheral circuit, wherein the peripheral circuit comprises a coupling resistor, a buffer capacitor, a current-limiting resistor, an RC absorption circuit and a feedback resistor; the auxiliary power supply is connected to a power supply port of the high-voltage pulse module through a buffer capacitor; the alarm feedback port of the high-voltage pulse module is connected with the alarm end of the single chip microcomputer, the high-voltage input end of the high-voltage pulse module is connected with the high-voltage source through the current-limiting resistor, the high-voltage pulse module is further connected with the RC absorption circuit, and the high-voltage pulse module outputs a pulse direct-current signal through the feedback resistor.
The high-voltage pulse module comprises photoelectric isolation, an operational amplifier, a Mosfet driving tube and a plurality of groups of synchronous adjustable pulse output circuits which are connected in parallel, each group of synchronous adjustable pulse output circuits comprises a loop formed by sequentially connecting a pulse transformer, a resonance module, a protection module, a Mosfet power tube and an adjustable resistor in series, a signal receiving end of the photoelectric isolation is connected with an output end of the TTL signal driving module, an output end of the photoelectric isolation is connected to a reverse input end of the operational amplifier, a non-inverting input end and an output end of the operational amplifier are both connected to a grid electrode of the Mosfet driving tube, a drain electrode of the Mosfet driving tube is connected to a primary side of the pulse transformer of the first group of synchronous adjustable pulse output circuits, a drain electrode of the Mosfet driving tube is also connected with a power supply end of an auxiliary power supply, and a secondary side of the pulse transformer of each group of synchronous adjustable pulse output circuits is respectively connected to the grid electrode of the Mosfet power tube through the resonance module and the protection module, the drain electrodes of the Mosfet power tubes of the first group of synchronous adjustable pulse output circuits are connected with a direct-current high-voltage power supply end, the source electrodes of the Mosfet power tubes of the first group of synchronous adjustable pulse output circuits are connected with the drain electrodes of the next group of Mosfet power tubes, the plurality of Mosfet power tubes are sequentially connected, and the source electrodes of the Mosfet power tubes of the last group of synchronous adjustable pulse output circuits serve as output ends to output adjustable pulse signals.
A high-voltage probe rise time tracing method based on a nanosecond high-voltage pulse generator comprises the following steps:
a: the output end of the high-voltage pulse generator is connected with the power supply end of the high-voltage probe, and the attenuated high-voltage probe is connected with an oscilloscope with the bandwidth being more than twice that of the high-voltage probe to form a measuring system and acquire a complete waveform;
b: measuring the rise time of the high-voltage probe by using the measurement function of the oscilloscopetIf the rise time ist=t r X (1 + -10%) ns, wherein,t r for the rise time of the high-voltage pulse generator, using the formula
Calculating;
in the formula, the first step is that,
for the impedance value of the resonance module and the self resistance R of the Mosfet power tubegSumming;
Cgdin order to obtain the characteristic capacitance of the power tube,
VDSis the working supply voltage;
VGSis a driving voltage;
Vgpthe saturation voltage of the power tube;
it is considered that the measurement system consisting of the oscilloscope and the high-voltage probe can accurately acquire the rise timet≥t r （ns) to demonstrate the bandwidth of the high voltage probeB≥350/t r Therefore, the tracing of the bandwidth of the high-voltage probe is realized.
According to the invention, according to the command input by the display control module, the STM32 single chip microcomputer respectively outputs commands to the TTL signal driving module and the PWM modulation driver to trigger the PWM high-voltage preceding-stage driving module to conduct work, then the high-voltage preceding-stage driving module is rectified by the rectification detection module and the rectification voltage-multiplying module, and the set high voltage is output and enters the high-voltage switch module. The adjustable TTL signal output by the TTL signal driving module triggers a driving front stage of the high-voltage switch module so as to control the on and off of the internal Mosfet and output a controllable and programmable direct current pulse signal on the glass glaze resistance-capacitance load. In the working process, the PWM high-voltage preceding-stage driving module, the high-voltage detection module and the high-voltage switch module can be subjected to real-time detection of the feedback protection circuit, and can be automatically stopped when a problem occurs, so that the warning is prompted.
Furthermore, the high-voltage pulse module adopts photoelectric isolation, an operational amplifier, a Mosfet driving tube and a plurality of groups of synchronous adjustable pulse output circuits which are connected in parallel, and each group of synchronous adjustable pulse output circuits is a loop formed by sequentially connecting a pulse transformer, a resonance module, a protection module, a Mosfet power tube and an adjustable resistor in series; the TTL signal driving module outputs to photoelectric isolation, drives a Mosfet driving tube to be connected with the primary side of the first group of pulse transformers after being amplified by the operational amplifier, and synchronously triggers the Mosfet power tube to be switched on or off; the Mosfet power tube is formed by connecting 3 SiC power MOSFET tubes with the same model and characteristic in series, and the withstand voltage characteristic is enhanced while the fast switching is achieved.
Drawings
FIG. 1 is a schematic block diagram of the circuit of the present invention;
FIG. 2 is a schematic block diagram of a high voltage switch module circuit of the present invention;
FIG. 3 is a schematic circuit diagram of a high voltage pulse module according to the present invention;
FIG. 4 is a schematic block diagram of the circuit of the present invention;
FIG. 5 is a schematic block diagram of the circuit of the present invention;
FIG. 6 is a flow chart of the present invention;
FIG. 7 is a connection diagram of a high voltage probe of the present invention;
FIG. 8 is a single pulse frequency rendering of the present invention;
FIG. 9 is a single pulse waveform demonstration of the present invention at 3kV with a rise time of 1.01 ns;
fig. 10 is a diagram illustrating the rising and falling edges of a single pulse waveform according to the present invention.
Detailed Description
As shown in fig. 1, the nanosecond-level high-voltage pulse generator of the present invention includes a system power supply, an auxiliary power supply, a single chip, a display control module, a dc high-voltage driving circuit, a dc high-voltage switching circuit, a discharge protection circuit, and a feedback protection circuit; the system power supply is communicated with the auxiliary power supply, the singlechip and the direct-current high-voltage driving circuit and supplies power; the commercial power 220V enters a system power circuit after being filtered and rectified, and is respectively supplied to an auxiliary power supply, a TTL signal driving module and an STM32 singlechip circuit for power supply. The single chip microcomputer is respectively communicated with the display control module, the direct-current high-voltage driving circuit, the direct-current high-voltage switching circuit and the feedback protection circuit. In order to ensure that the digital visual environment is convenient to operate and control, an STM32 embedded single-chip microcomputer is adopted, one-key control is realized through preprogramming, and a required pulse signal source is generated.
The output end of the auxiliary power supply is connected with the power supply end of the direct-current high-voltage switch circuit, the opening controlled end of the direct-current high-voltage switch circuit is connected with the output end of the direct-current high-voltage drive circuit, the direct-current high-voltage switch circuit is connected with the single chip microcomputer through the feedback protection circuit, and the direct-current high-voltage switch circuit is further connected with the discharge protection circuit.
The direct-current high-voltage driving circuit comprises a TTL signal driving module, a controlled end of the TTL signal driving module is connected with the single chip microcomputer, and an output end of the TTL signal driving module is connected with a starting controlled end of the direct-current high-voltage switching circuit. And generating 5V TTL signals with programmable pulse width by the CPLD device. The TTL signal driving module can be controlled in a programmable mode, can output 0-5 kHz frequency and step certain TTL signals, and is used for controlling the on-off of the high-voltage switch module.
The direct-current high-voltage switch circuit comprises a PWM modulation driving module, a PWM high-voltage preceding-stage driving module, a rectification detection module, a rectification voltage-multiplying module, a high-voltage switch module and a direct-current high-voltage pulse output module which are sequentially and electrically connected, wherein the PWM high-voltage preceding-stage driving module, the rectification detection module, the rectification voltage-multiplying module and the high-voltage switch module are respectively connected with a feedback protection circuit, the rectification detection module is connected with a single chip microcomputer through a check and division detection module, the rectification voltage-multiplying module is connected with a discharge protection circuit, and the controlled end of the high-voltage switch module is connected with the output end of a TTL signal driving module. The voltage of the modulation signal is continuously adjustable under the programming control, the PWM modulation driving module sends a PWM programmable modulation signal to generate primary high voltage through the PMW high-voltage preceding-stage driving module, and then the primary high voltage is output to the rectification detection module and the rectification voltage doubling module, so that secondary high voltage, namely direct current high voltage of 200V-3000 kV is obtained, and the secondary high voltage is stored by the buffer capacitor and is output to the direct current high-voltage pulse output module to serve as a direct current high-voltage source.
As shown in fig. 2, the high voltage switch module is composed of a high voltage pulse module and a peripheral circuit, the peripheral circuit includes a coupling resistor, a buffer capacitor, a current limiting resistor, an RC absorption circuit and a feedback resistor, an output terminal of the TTL signal driving module is connected to a signal receiving port of the high voltage pulse module through the coupling resistor, and an output signal of the TTL signal driving module is used as a trigger signal of the high voltage pulse module; the auxiliary power supply is connected to a power supply port of the high-voltage pulse module through a buffer capacitor; the alarm feedback port of the high-voltage pulse module is connected with the alarm end of the single chip microcomputer, the high-voltage input end of the high-voltage pulse module is connected with the high-voltage source through the current-limiting resistor, the high-voltage pulse module is further connected with the RC absorption circuit, and the high-voltage pulse module outputs a pulse direct-current signal through the feedback resistor.
As shown in fig. 2, the high voltage switch module is composed of a high voltage pulse module U1And a peripheral circuit, a high-voltage pulse module U1(1) The pin is connected with an auxiliary +5V power supply and passes through a buffer capacitorC 1 Providing working power supply for internal circuit, high-voltage pulse module U1(2) The pin is connected with an externally input TTL pulse signal as a trigger signal of the internal driving circuit. Resistance (RC)R 1 And shaping the input TTL signal to reduce the ringing signal for a signal coupling resistor. TTL signal continuous trigger frequency is less than 5kHz, maximum pulse group signal is not more than 1MHz, and when input TTL signal is incorrect, high-voltage pulse module U1(4) The pin outputs a high level signal as a protection signal, and the high level signal is output to an STM32 singlechip circuit for fault protection. High-voltage pulse module U1(3) The pin (6) and the pin (6) are respectively used as a low-voltage grounding end and a high-voltage grounding end, and a star connection method and a buffer capacitor are adoptedC 2 And the output terminal grounding end is connected to the ground together, so that the signal interference is reduced as much as possible. High-voltage pulse module U1(5) The pin passes through the series current limiting resistorR 5 Is connected with a direct-current high-voltage power supply end,R 5 for limiting the current resistance, the current-limiting resistance can be variedR 5 To suit the requirements of the measurement or application.R 2 、C 3 The series connection forms an RC absorption circuit which is adjustedR 2 、C 3 The size of the voltage-controlled oscillator eliminates ringing interference which improves output direct current pulses as much as possible.R 4 For feedback resistance, due to high-voltage pulse module U1Setting the fixed turn-on time to 150ns, the load capacitance to be not more than 3nF, and the maximum peak current to be controlled by the feedback resistorR 4 The resistance value of (a) is determined,R 4 formula for calculating resistance value
；
Wherein the content of the first and second substances,V o is a direct-current high-voltage power supply,I p is the maximum peak current at which the current is,R start is a high-voltage pulse module U1The value of the static resistance of (a),R 3 for the load resistance, high voltage DC signal passesR 5 、R 3 、U 1 Forming the required pulse DC signal through a feedback resistor R4And output to the external terminal base.
As shown in fig. 3, the high voltage pulse module includes a photoelectric isolation, an operational amplifier, a Mosfet driving tube, and a plurality of sets of synchronous adjustable pulse output circuits connected in parallel, each set of synchronous adjustable pulse output circuit is a loop formed by sequentially connecting a pulse transformer, a resonance module, a protection module, a Mosfet power tube, and an adjustable resistor in series, the signal receiving end of the photoelectric isolation is connected to the output end of the TTL signal driving module, the output end of the photoelectric isolation is connected to the reverse input end of the operational amplifier, the non-inverting input end and the output end of the operational amplifier are both connected to the gate of the Mosfet driving tube, the drain of the Mosfet driving tube is connected to the primary side of the pulse transformer of the first set of synchronous adjustable pulse output circuit, the drain of the Mosfet driving tube is also connected to the power supply end of the auxiliary power supply, the secondary side of the pulse transformer of each set of synchronous adjustable pulse output circuit is connected to the gate of the Mosfet power tube through the resonance module and the protection module, the drain electrodes of the Mosfet power tubes of the first group of synchronous adjustable pulse output circuits are connected with a direct-current high-voltage power supply end, the source electrodes of the Mosfet power tubes of the first group of synchronous adjustable pulse output circuits are connected with the drain electrodes of the next group of Mosfet power tubes, the plurality of Mosfet power tubes are sequentially connected, and the source electrodes of the Mosfet power tubes of the last group of synchronous adjustable pulse output circuits serve as output ends to output adjustable pulse signals. In order to generate a high-voltage and high-current rapid leading-edge pulse signal, through the design of a high-voltage pulse module, the circuit adopts a German HTS import module, a core circuit of the high-voltage and high-current rapid leading-edge pulse signal adopts a mode of connecting a plurality of Mosfet power tubes (Mosfet metal field effect switch tubes) in series, a specially designed driving circuit ensures the consistency and instantaneity of the switches of the power tubes through a mode of coupling and synchronizing the pulse transformer, and therefore the leading edge of the pulse signal is stabilized at 1.4ns under the working environment of high voltage (+ 200V-3000 kV) and high current (60A peak value).
Specifically, as shown in fig. 1 and 3, firstly, the STM32 single chip microcomputer sends out a control signal, the control signal is output to the photoelectric isolation through the TTL signal driving module, and the control signal is amplified by the operational amplifier and then drives the Mosfet driving tubes to be connected with the primary sides of the first group of pulse transformers, so as to synchronously trigger the Mosfet power tubes to be switched on or off. The Mosfet power tube is formed by connecting 3 SiC power MOSFET tubes with the same model and characteristic in series, and the withstand voltage characteristic is enhanced while the fast switching is achieved. The equivalent circuit of each MOSFET is shown in fig. 4, and the switching time characteristic thereof is shown in fig. 5.
As shown in fig. 4 and 5, t3The rising edge time when the switch is turned on can be represented by the formula
Calculation in the formula
For the impedance value R of the resonant moduleGAnd self-resistance R of Mosfet power tubegSum, i.e. 25 Ω, CgdIn order to obtain the characteristic capacitance of the power tube,
，VDSis set to 1000V for working power supply voltageGSTo drive the voltage 10V, VgpIs the saturation voltage of the power tube and has a characteristic value of
Calculating by the formula:
。
as shown in fig. 8, a single pulse frequency display plot is demonstrated; as shown in fig. 9, it is demonstrated that when the voltage is 3kV, the rising edge time of a single pulse waveform reaches 1.01ns, so the invention can not only reach a rising edge time of 1.4ns, but ideally can reach a rising edge time of 1.01ns, even shorter; as shown in fig. 10, a display diagram of the rising and falling edges of a single pulse waveform is demonstrated. From the above figures, it can be seen that the invention can generate high voltage pulse with rise time of 1.4ns, less than 1.4ns and amplitude of 3kV, which solves the calibration problem of oscillograph and high voltage probe in actual working state, effectively solves the problem of magnitude tracing of high voltage probe in China, and solves the problem of restricting the development of high voltage pulse source.
As shown in fig. 6, the nanosecond high-voltage pulse generator of the present invention operates as follows:
step 1, a system power supply is switched on, and power is supplied to an STM32 single chip microcomputer (2), a TTL signal driving module (6) and a 24V auxiliary power supply (8) respectively after rectification and filtering. And resetting the system and waiting for an operation instruction.
And 2, according to a command input by the display control module (3), the STM32 single chip microcomputer (2) respectively outputs a command to the TTL signal driving module (6) and the PWM modulation driver (4) to trigger the PWM high-voltage preceding-stage driving module (9) to conduct and work, then, the PWM high-voltage preceding-stage driving module is rectified by the rectification detection module (10) and the rectification voltage-multiplying module (11), and the set high voltage is output and enters the high-voltage switch module (12).
And 3, triggering a driving front stage of the high-voltage switch module (12) by the adjustable TTL signal output by the TTL signal driving module (6), so as to control the on and off of the internal Mosfet and output a controllable and programmable direct current pulse signal on the glass glaze resistance-capacitance load.
And 4, in the working process, the PWM high-voltage preceding-stage driving module (9), the high-voltage detection module (10) and the high-voltage switch module (12) are subjected to real-time detection of the feedback protection circuit (7), and the automatic shutdown is realized when a problem occurs, so that the prompt and the alarm are realized.
And 5, after the shutdown, the discharge protection circuit (14) automatically discharges the high voltage on the buffer capacitor, thereby playing a role of safety protection.
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 7, a method for tracing the rise time of a high-voltage probe based on a nanosecond-level high-voltage pulse generator includes the following steps:
a: the output end of the high-voltage pulse generator is connected with the power supply end of the high-voltage probe, and the attenuated high-voltage probe is connected with an oscilloscope with the bandwidth being more than twice that of the high-voltage probe to form a measuring system and acquire a complete waveform;
b: measuring the rise time of the high-voltage probe by using the measurement function of the oscilloscopetIf the rise time ist=t r X (1 + -10%) ns, wherein,t r for the rise time of the high-voltage pulse generator, using the formula
Calculating;
in the formula, the first step is that,
for resonant module impedanceResistance value and self resistance R of Mosfet power tubegSumming;
Cgdin order to obtain the characteristic capacitance of the power tube,
VDSis the working supply voltage;
VGSis a driving voltage;
Vgpthe saturation voltage of the power tube;
it is considered that the measurement system consisting of the oscilloscope and the high-voltage probe can accurately acquire the rise timet≥t r （ns) to demonstrate the bandwidth of the high voltage probeB≥350/t r Therefore, the tracing of the bandwidth of the high-voltage probe is realized.
Finally, it should be noted that: the above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. A nanosecond high voltage pulse generator, comprising: the system comprises a system power supply, an auxiliary power supply, a single chip microcomputer, a display control module, a direct-current high-voltage driving circuit, a direct-current high-voltage switching circuit, a discharge protection circuit and a feedback protection circuit; the system power supply is communicated with the auxiliary power supply, the single chip microcomputer and the direct-current high-voltage driving circuit and supplies power, and the single chip microcomputer is respectively communicated with the display control module, the direct-current high-voltage driving circuit, the direct-current high-voltage switching circuit and the feedback protection circuit; the output end of the auxiliary power supply is connected with the power supply end of the direct-current high-voltage switch circuit, the opening controlled end of the direct-current high-voltage switch circuit is connected with the output end of the direct-current high-voltage drive circuit, the direct-current high-voltage switch circuit is connected with the single chip microcomputer through the feedback protection circuit, and the direct-current high-voltage switch circuit is further connected with the discharge protection circuit.
2. Nanosecond high-voltage pulse generator according to claim 1, characterized in that: the direct-current high-voltage driving circuit comprises a TTL signal driving module, a controlled end of the TTL signal driving module is connected with the single chip microcomputer, and an output end of the TTL signal driving module is connected with a starting controlled end of the direct-current high-voltage switching circuit.
3. A nanosecond high voltage pulse generator according to claim 2, characterized in that: the direct-current high-voltage switch circuit comprises a PWM modulation driving module, a PWM high-voltage preceding-stage driving module, a rectification detection module, a rectification voltage-multiplying module, a high-voltage switch module and a direct-current high-voltage pulse output module which are sequentially and electrically connected, wherein the PWM high-voltage preceding-stage driving module, the rectification detection module, the rectification voltage-multiplying module and the high-voltage switch module are respectively connected with a feedback protection circuit, the rectification detection module is connected with a single chip microcomputer through a check and division detection module, the rectification voltage-multiplying module is connected with a discharge protection circuit, and the controlled end of the high-voltage switch module is connected with the output end of a TTL signal driving module.
4. A nanosecond high voltage pulse generator according to claim 3, characterized in that: the high-voltage switch module consists of a high-voltage pulse module and a peripheral circuit, wherein the peripheral circuit comprises a coupling resistor, a buffer capacitor, a current-limiting resistor, an RC absorption circuit and a feedback resistor; the auxiliary power supply is connected to a power supply port of the high-voltage pulse module through a buffer capacitor; the alarm feedback port of the high-voltage pulse module is connected with the alarm end of the single chip microcomputer, the high-voltage input end of the high-voltage pulse module is connected with the high-voltage source through the current-limiting resistor, the high-voltage pulse module is further connected with the RC absorption circuit, and the high-voltage pulse module outputs a pulse direct-current signal through the feedback resistor.
5. Nanosecond high-voltage pulse generator according to claim 4, characterized in that: the high-voltage pulse module comprises photoelectric isolation, an operational amplifier, a Mosfet driving tube and a plurality of groups of synchronous adjustable pulse output circuits which are connected in parallel, each group of synchronous adjustable pulse output circuits comprises a loop formed by sequentially connecting a pulse transformer, a resonance module, a protection module, a Mosfet power tube and an adjustable resistor in series, a signal receiving end of the photoelectric isolation is connected with an output end of the TTL signal driving module, an output end of the photoelectric isolation is connected to a reverse input end of the operational amplifier, a non-inverting input end and an output end of the operational amplifier are both connected to a grid electrode of the Mosfet driving tube, a drain electrode of the Mosfet driving tube is connected to a primary side of the pulse transformer of the first group of synchronous adjustable pulse output circuits, a drain electrode of the Mosfet driving tube is also connected with a power supply end of an auxiliary power supply, and a secondary side of the pulse transformer of each group of synchronous adjustable pulse output circuits is respectively connected to the grid electrode of the Mosfet power tube through the resonance module and the protection module, the drain electrodes of the Mosfet power tubes of the first group of synchronous adjustable pulse output circuits are connected with a direct-current high-voltage power supply end, the source electrodes of the Mosfet power tubes of the first group of synchronous adjustable pulse output circuits are connected with the drain electrodes of the next group of Mosfet power tubes, the plurality of Mosfet power tubes are sequentially connected, and the source electrodes of the Mosfet power tubes of the last group of synchronous adjustable pulse output circuits serve as output ends to output adjustable pulse signals.
6. A high-voltage probe rise time tracing method based on a nanosecond high-voltage pulse generator is characterized by comprising the following steps: the method comprises the following steps:
a: the output end of the high-voltage pulse generator is connected with the power supply end of the high-voltage probe, and the attenuated high-voltage probe is connected with an oscilloscope with the bandwidth being more than twice that of the high-voltage probe to form a measuring system and acquire a complete waveform;
b: measuring the rise time of the high-voltage probe by using the measurement function of the oscilloscopetIf the rise time ist=t r X (1 + -10%) ns, wherein,t r for the rise time of the high-voltage pulse generator, using the formula
Calculating;
in the formula, the first step is that,
for the impedance value of the resonance module and the self resistance R of the Mosfet power tubegSumming;
Cgdin order to obtain the characteristic capacitance of the power tube,
VDSis the working supply voltage;
VGSis a driving voltage;
Vgpthe saturation voltage of the power tube;
it is considered that the measurement system consisting of the oscilloscope and the high-voltage probe can accurately acquire the rise timet≥t r （ns) to demonstrate the bandwidth of the high voltage probeB≥350/t r Therefore, the tracing of the bandwidth of the high-voltage probe is realized.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111354921.4A CN114039582A (en) | 2021-11-16 | 2021-11-16 | Nanosecond high-voltage pulse generator and high-voltage probe rise time tracing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111354921.4A CN114039582A (en) | 2021-11-16 | 2021-11-16 | Nanosecond high-voltage pulse generator and high-voltage probe rise time tracing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114039582A true CN114039582A (en) | 2022-02-11 |
Family
ID=80144494
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111354921.4A Pending CN114039582A (en) | 2021-11-16 | 2021-11-16 | Nanosecond high-voltage pulse generator and high-voltage probe rise time tracing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114039582A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116232257A (en) * | 2023-03-15 | 2023-06-06 | 陕西炬脉瑞丰科技有限公司 | High-voltage waveform amplifying system and method |
-
2021
- 2021-11-16 CN CN202111354921.4A patent/CN114039582A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116232257A (en) * | 2023-03-15 | 2023-06-06 | 陕西炬脉瑞丰科技有限公司 | High-voltage waveform amplifying system and method |
| CN116232257B (en) * | 2023-03-15 | 2024-03-08 | 陕西炬脉瑞丰科技有限公司 | High-voltage waveform amplifying system and method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109917192B (en) | Power MOSFET device on-resistance and output capacitance testing device based on damped oscillation wave | |
| CN114039582A (en) | Nanosecond high-voltage pulse generator and high-voltage probe rise time tracing method | |
| CN111239577A (en) | High-voltage high-power thyristor leakage current testing system and method thereof | |
| CN110018406B (en) | Double-pulse test system | |
| CN209803204U (en) | Saturated voltage drop measuring circuit of high-voltage IGBT device | |
| CN207691759U (en) | A kind of tension measuring circuit | |
| CN111220883B (en) | Method and device for detecting insulation defect of basin-type insulator based on steep wave voltage | |
| CN102013808B (en) | Output voltage isolation sampling circuit for DC-DC conversion and control method of output voltage isolation sampling circuit | |
| CN116559617A (en) | IGBT collector current on-line detection device and method based on gate current | |
| CN116626465A (en) | Power device characteristic test circuit and method | |
| CN103743945A (en) | Circuit and method for detecting load current of high-voltage pulse power supply | |
| CN116626462A (en) | Dynamic characteristic testing device and method for power device | |
| CN113376547B (en) | Common mode monitoring signal injection device and cable insulation on-line monitoring system adopting same | |
| CN209030098U (en) | A kind of High-precision high-frequency high voltage power supply | |
| CN109149950B (en) | High-precision integrated high-frequency high-voltage power supply | |
| CN209030097U (en) | A kind of direct current high-frequency and high-voltage power supply | |
| CN113534010A (en) | Short circuit testing device and method for power device | |
| CN114280522A (en) | Pulse counting calibration device and method for pulse counter | |
| CN107261331B (en) | Transcranial magnetic therapeutic apparatus with interference detection function and control method thereof | |
| CN210119537U (en) | Transformer longitudinal insulation performance measuring device | |
| CN112564509A (en) | High-stability numerical control large-current generator | |
| CN211348401U (en) | Discharge voltage test equipment | |
| CN219960116U (en) | Current limiting circuit and power device testing device | |
| CN112290911B (en) | Triangular pulse source circuit for positioning pulse injection faults at low-voltage side of distribution transformer | |
| CN112290910B (en) | Voltage-multiplying triangular pulse source circuit for positioning injection fault of distribution transformer low-voltage side pulse |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |