CN116232257B - High-voltage waveform amplifying system and method - Google Patents
High-voltage waveform amplifying system and method Download PDFInfo
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- CN116232257B CN116232257B CN202310247819.7A CN202310247819A CN116232257B CN 116232257 B CN116232257 B CN 116232257B CN 202310247819 A CN202310247819 A CN 202310247819A CN 116232257 B CN116232257 B CN 116232257B
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- voltage
- light source
- photoconductive switch
- photoconductive
- signal
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- 238000000034 method Methods 0.000 title claims abstract description 10
- 230000003321 amplification Effects 0.000 claims abstract description 15
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 15
- 230000001678 irradiating effect Effects 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims description 10
- 230000003287 optical effect Effects 0.000 claims description 6
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910002601 GaN Inorganic materials 0.000 claims description 3
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 3
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 5
- 230000003071 parasitic effect Effects 0.000 description 2
- 239000011324 bead Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/36—Indexing scheme relating to amplifiers the amplifier comprising means for increasing the bandwidth
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Semiconductor Lasers (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a high-voltage waveform amplifying system which comprises a high-voltage photoconductive switch module and a modulated light source module, wherein the modulated light source module is used for irradiating the high-voltage photoconductive switch module. The high-voltage waveform amplifying system can greatly improve the working voltage and the working bandwidth of the current voltage amplifier. A high voltage waveform amplification method is also disclosed.
Description
Technical Field
The invention belongs to the technical field of electric signal power amplification, and particularly relates to a high-voltage waveform amplification system and a high-voltage waveform amplification method.
Background
Photoconductive switch (Photoconductive Semiconductor Switches, PCSS for short) is a novel switching device formed by combining an ultrashort pulse laser with a photoconductive body. Compared with the traditional gas switch and liquid switch, the photoconductive switch has the advantages of high switching speed (subns), no shaking of triggering (subps), small parasitic inductance (nH), large bearing current density (10) 6 A/cm 2 ) Controllable current conduction time, high blocking electric field (100 kV/cm), high repetition frequency, simple and compact structure, etc. The solid-state switch device has the most development potential in the technical fields of ultra-high-speed electronics and high-power pulse generation and shaping.
The high-voltage amplifier, or power amplifier, high-voltage power amplifier refers to the same test instrument, mainly amplifies the power and amplitude of the waveform of the signal source or waveform generator, and completes experimental study by driving and exciting MEMS, photoelectric, piezoelectric, nano devices and circuits.
The current of the existing high-voltage amplifier in the market is only tens of milliamperes after the voltage reaches kilovolts, the power is difficult to increase, and the bandwidth is drastically reduced and is generally smaller than 5kHz after the voltage reaches tens of kilovolts. Along with the increasing urgent requirements of the fields of industry, military and the like on high-power devices, the requirements on waveform diversity and slew rate are higher and higher, and the application requirements are difficult to meet in the prior art.
Disclosure of Invention
The first object of the present invention is to provide a high-voltage waveform amplifying system, which can greatly improve the working voltage and the working bandwidth of the current voltage amplifier.
A second object of the present invention is to provide a high voltage waveform amplification method.
The first technical scheme adopted by the invention is that the high-voltage waveform amplifying system comprises a high-voltage photoconductive switch module and a modulated light source module, wherein the modulated light source module is used for irradiating the high-voltage photoconductive switch module.
The present invention is also characterized in that,
the light source module comprises a signal source, a low-voltage power amplifier and a low-voltage power amplifier power supply which are connected in sequence; the device also comprises a bias circuit, a modulated light source and a direct-current low-voltage power supply which are connected in sequence; the low-voltage power amplifier is also connected with a direct-current power supply;
the high-voltage photoconductive switch module comprises a direct-current high-voltage power supply and a photoconductive switch group which are connected with each other; the photoconductive switch group is used for receiving the optical signal emitted by the modulatable light source, and the resistance of the photoconductive switch is changed in proportion to the intensity of the optical signal.
The signal source adopts a function signal generator.
The photoconductive switch group is formed by connecting a plurality of photoconductive switches in series or in parallel; the direct current high voltage power supply supplies power to the plurality of photoconductive switches.
The photoconductive switch comprises a photoconductive switch substrate layer, and two ohmic electrodes are arranged on one side surface of the photoconductive switch substrate layer.
The photoconductive switch substrate layer is a gallium arsenide layer, a gallium nitride layer, an indium phosphide layer, a high-resistance silicon layer or a silicon carbide layer.
The second technical scheme adopted by the invention is that the high-voltage waveform amplifying method adopts the high-voltage waveform amplifying system, and specifically comprises the following steps:
the signal source sends out any wave signal and inputs the signal into the low-voltage power amplifier through a cable, the low-voltage power amplifier is powered by a low-voltage power amplifier power supply, the low-voltage power amplifier outputs a signal through a bias circuit, all the biased any wave power signal is changed into positive voltage and is used for driving the modulatable light source to obtain a high-speed modulation light source which is modulated by the input signal at a high speed, and the direct-current low-voltage power supply provides a required rated voltage for the light emission of the modulatable light source; the direct-current high-voltage power supply is sequentially connected with the photoconductive switch group and the load in series; the high-speed modulation light source is utilized to irradiate a plurality of photoconductive switches in the photoconductive switch group, the photoconductive switches are all conducted, and the on-state resistance of the photoconductive switches is controlled by the modulation light source, so that the purpose of controlling high-voltage loop current by the modulation light source is achieved.
The beneficial effects of the invention are as follows:
(1) The high-voltage photoconductive switch module in the system has the advantages of high response speed, high voltage resistance, small volume, stable performance, long service life, small parasitic capacitance and inductance and the like, and can greatly improve the working voltage and the working bandwidth of the current voltage amplifier.
(2) The method can amplify any wave to high voltage of hundreds of kilovolts, the current can reach 1A, the frequency is not less than 1MHz, and the slew rate is more than 10kV/us.
Drawings
FIG. 1 is a schematic diagram of a high voltage waveform amplification system of the present invention;
FIG. 2 is a schematic structural diagram of a photoconductive switch;
FIG. 3 is an enlarged view of a saw tooth wave of 300 KHz;
FIG. 4 is an arbitrary wave magnification of 1 MHz;
fig. 5 is a 2MHz rectified positive-sine wave amplification.
In the figure, a signal source, a low-voltage power amplifier, a modulating light source, a direct-current high-voltage power supply, a photoconductive switch group, a load, a bias circuit and a direct-current low-voltage power supply are respectively arranged in sequence, wherein the signal source, the low-voltage power amplifier, the modulating light source, the direct-current high-voltage power supply, the photoconductive switch group, the load and the bias circuit are respectively arranged in sequence, and the direct-current low-voltage power supply is respectively arranged in sequence;
6-1, a photoconductive switch substrate layer, 6-2, an ohmic electrode; A. and (5) irradiating the light source.
Detailed Description
The invention will be described in detail below with reference to the drawings and the detailed description.
The invention provides a high-voltage waveform amplifying system, as shown in fig. 1, which comprises a high-voltage photoconductive switch module and a modulated light source module, wherein the modulated light source module is used for irradiating the high-voltage photoconductive switch module.
The light source module comprises a signal source 1 (40M signal source, runaway), a low-voltage power amplifier 2 (100W, runaway) and a low-voltage power amplifier power supply 3 which are connected in sequence; the device also comprises a bias circuit 8, a modulatable light source 4 and a DC low-voltage power supply 9 bias circuit 8 which are connected in sequence;
the high-voltage photoconductive switch module comprises a direct-current high-voltage power supply 5 (50 kV direct-current high-voltage power supply, tianjin constant blog) and a photoconductive switch group 6 which are connected with each other, and the photoconductive switch group 6 is also connected with a load 7; the photoconductive switch group is used for receiving the optical signal emitted by the modulated light source, and the resistance of the photoconductive switch is changed in proportion to the intensity of the optical signal.
The signal source 1 adopts a function signal generator (which can be output by random waveform, 1KHz-5MHz and 20mA current).
The light source 4 can be an LED array (LED array adopts LED lamp beads, cree. Inc) or a laser with adjustable light waveform or other light sources with adjustable waveforms.
The dc voltage source 9 is able to just meet the rated voltage required for the light emission of the modulated light source 4 (LED array);
the bias circuit 8 biases various waveforms output by the low-voltage power amplifier 2 to ensure that the amplitudes of the waveforms are positive values, and the waveforms can be modulated in a linear working area of the LED array;
the photoconductive switch group 6 is formed by connecting a plurality of photoconductive switches in series or in parallel; the dc high voltage power supply 5 powers several photoconductive switches.
As shown in fig. 2, the photoconductive switch comprises a photoconductive switch substrate layer 6-1, and two ohmic electrodes 6-2 are arranged on one side surface of the photoconductive switch substrate layer 6-1.
The photoconductive switch substrate layer 6-1 is a gallium arsenide layer, a gallium nitride layer, an indium phosphide layer, a high-resistance silicon layer, or a silicon carbide layer.
The principle of the system is that various function waveform electric signals generated by a function generator are utilized, after low-voltage power amplification, the luminous power of an LED lamp is controlled to be modulated along with the signal waveform, an irradiation light source A generated by the LED is utilized to irradiate a high-voltage biased (can reach tens kV or even hundreds kV) high-voltage photoconductive switch, the on-resistance of the photoelectric switch is controlled by modulating light, so that the output current and the output voltage are controlled, and a high-voltage modulation waveform of tens kV to hundreds kV is obtained on a load.
The invention also provides a high-voltage waveform amplifying method, which adopts the high-voltage waveform amplifying system and specifically comprises the following steps:
the function signal generator sends out any wave signal to be input to the low-voltage power amplifier 2 through a cable, the low-voltage power amplifier 2 is powered by the low-voltage power amplifier power supply 3, the low-voltage power amplifier 2 outputs a signal through the bias circuit 8, the random wave power signal after paper deception is used for driving an LED (or other modulatable light sources), and a high-speed modulation light source (modulatable light source 4) modulated at high speed by the input signal is obtained; the direct-current high-voltage power supply 5 is sequentially connected with the photoconductive switch group and the load 7 in series, and no voltage current is output on the load when the photoconductive switch is turned off; the DC power supply 9 provides the required rated voltage for the high-speed modulation light source (LED array) to emit light; the high-speed modulation light source is utilized to irradiate a plurality of photoconductive switches in the photoconductive switch group, the photoconductive switches are all conducted, the on-state resistance of the photoconductive switches is controlled by the modulation light source, so that the purpose of controlling high-voltage loop current by the modulation light source is achieved, and the modulated high voltage and current can be achieved on the load 7 (3 MΩ and 10W). The method can amplify any wave to high voltage of hundreds of kilovolts, the current can reach more than 1A and 100kHz, the slew rate is more than 10kV/us, as shown in figures 3-5, figure 3 is a saw-tooth wave amplifying diagram of 300KHz, and the amplifying voltage is 50KV; FIG. 4 is an arbitrary wave amplification diagram of 1MHz, amplified voltage 50KV; fig. 5 is a 2MHz rectified sine wave amplification diagram, amplified voltage 50KV, and after arbitrary waveform is input to the LED lamp through the bias circuit, the lamp modulates the switch group to generate high voltage pulse of arbitrary waveform, and the test condition is one atmosphere pressure and room temperature. For example, the voltage amplification product of Aigtek has a voltage amplification of 5kv and a frequency of up to 5kHz, and the high-voltage waveform amplification system of the invention has a frequency of up to 1MHz when the test voltage is output at 50 kv.
Claims (6)
1. The high-voltage waveform amplifying system is characterized by comprising a high-voltage photoconductive switch module and a modulated light source module, wherein the modulated light source module is used for irradiating the high-voltage photoconductive switch module;
the light source module comprises a signal source (1), a low-voltage power amplifier (2) and a low-voltage power amplifier power supply (3) which are connected in sequence; the device also comprises a bias circuit (8), a modulated light source (4) and a direct current power supply (9) which are connected in sequence; the low-voltage power amplifier (2) is also connected with the bias circuit (8);
the high-voltage photoconductive switch module comprises a direct-current high-voltage power supply (5) and a photoconductive switch group (6) which are connected with each other; the photoconductive switch group is for receiving an optical signal emitted by the modulated optical source.
2. A high voltage waveform amplifying system according to claim 1, wherein said signal source (1) employs a function signal generator.
3. The high voltage waveform amplification system of claim 1, characterized in that the photoconductive switch group (6) consists of several photoconductive switches connected in series or in parallel; the direct-current high-voltage power supply (5) supplies power for a plurality of photoconductive switches.
4. A high voltage waveform amplifying system according to claim 3, wherein said photoconductive switch comprises a photoconductive switch substrate layer (6-1), and two ohmic electrodes (6-2) are provided on one side surface of said photoconductive switch substrate layer (6-1).
5. The high voltage waveform amplification system of claim 4, characterized in that the photoconductive switch substrate layer (6-1) is a gallium arsenide layer, a gallium nitride layer, an indium phosphide layer, a high-resistance silicon layer, or a silicon carbide layer.
6. A high-voltage waveform amplifying method, characterized in that a high-voltage waveform amplifying system according to claim 3 is adopted, and specifically:
the signal source (1) sends out any wave signal and inputs the signal into the low-voltage power amplifier (2) through a cable, the low-voltage power amplifier (2) is powered by the low-voltage power amplifier power supply (3), the low-voltage power amplifier (2) outputs the signal through the bias circuit (8), all the biased any wave power signal is changed into positive voltage and is used for driving the modulatable light source (4), a high-speed modulation light source which is modulated at a high speed by an input signal is obtained, and the direct-current low-voltage power supply (9) provides required rated voltage for the light emission of the modulatable light source (4); the direct-current high-voltage power supply (5) is sequentially connected with the photoconductive switch group and the load (7) in series; the high-speed modulation light source is utilized to irradiate a plurality of photoconductive switches in the photoconductive switch group, the photoconductive switches are all conducted, and the on-state resistance of the photoconductive switches is controlled by the modulation light source, so that the purpose of controlling high-voltage loop current by the modulation light source is achieved.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202310247819.7A CN116232257B (en) | 2023-03-15 | 2023-03-15 | High-voltage waveform amplifying system and method |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310247819.7A CN116232257B (en) | 2023-03-15 | 2023-03-15 | High-voltage waveform amplifying system and method |
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| CN116232257A CN116232257A (en) | 2023-06-06 |
| CN116232257B true CN116232257B (en) | 2024-03-08 |
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