CN114038965B - Epitaxial substrate and manufacturing method thereof - Google Patents
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- CN114038965B CN114038965B CN202110358710.1A CN202110358710A CN114038965B CN 114038965 B CN114038965 B CN 114038965B CN 202110358710 A CN202110358710 A CN 202110358710A CN 114038965 B CN114038965 B CN 114038965B
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- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 230000007547 defect Effects 0.000 claims abstract description 33
- 230000000903 blocking effect Effects 0.000 claims abstract description 27
- 239000002105 nanoparticle Substances 0.000 claims abstract description 21
- 239000013078 crystal Substances 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims description 62
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 47
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 41
- 229910052710 silicon Inorganic materials 0.000 claims description 41
- 239000010703 silicon Substances 0.000 claims description 41
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 22
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 229910008045 Si-Si Inorganic materials 0.000 claims description 8
- 229910006411 Si—Si Inorganic materials 0.000 claims description 8
- 239000011856 silicon-based particle Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 7
- 239000013077 target material Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 5
- 230000006798 recombination Effects 0.000 abstract description 9
- 238000005215 recombination Methods 0.000 abstract description 7
- 230000005855 radiation Effects 0.000 abstract description 5
- 239000010408 film Substances 0.000 description 39
- 230000035515 penetration Effects 0.000 description 5
- 239000010409 thin film Substances 0.000 description 4
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 229910052594 sapphire Inorganic materials 0.000 description 3
- 239000010980 sapphire Substances 0.000 description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 3
- 229910010271 silicon carbide Inorganic materials 0.000 description 3
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001534 heteroepitaxy Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/20—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The application relates to an epitaxial substrate and a manufacturing method thereof. The epitaxial substrate comprises a substrate, a defect blocking layer and a nano pattern layer, wherein the defect blocking layer is arranged on one side of the substrate, the nano pattern layer is arranged on one side of the defect blocking layer away from the substrate, the nano pattern layer is composed of at least one layer of nano-scale particles, and the nano-scale particles enable one side of the nano pattern layer away from the substrate to have a concave-convex surface. The defect blocking layer and the nano pattern layer can block the threading dislocation of the epitaxial substrate extending to the film, so that the carrier concentration is increased, the radiation recombination probability and the internal quantum efficiency are improved, the luminous efficiency of the device is improved, the concave-convex surface of the nano pattern layer is taken as the growth surface, the grown epitaxial film can bend and combine the dislocation through lateral growth, the longitudinal growth of the epitaxial film is changed into non-longitudinal growth such as transverse growth, the dislocation density of the epitaxial film is further reduced, and the crystal quality of the epitaxial film is improved.
Description
Technical Field
The application relates to the technical field of epitaxial films, in particular to an epitaxial substrate and a manufacturing method thereof.
Background
Micro light emitting diodes (Micro Light Emitting Diode, micro-LEDs) are attracting attention as a new generation of display technology because of their superior contrast, reaction time, power consumption, viewing angle, and resolution to liquid crystal displays (Liquid Crystal Display, LCD) and organic light emitting semiconductors (Organic Light Emitting Diode, OLED).
Currently, micro-LEDs also face many challenges, one of which is the availability of high quality epitaxial films. Because the Micro-LED chip size is small, usually tens of micrometers or even a few micrometers, and the conventional pattern substrate pattern size is in the order of micrometers, the conventional pattern substrate pattern size cannot meet the requirements, and the production of an epitaxial wafer with high quality and high luminous efficiency on the substrate has become one of important problems.
The dominant epitaxial technique is currently heteroepitaxy, which has a very high dislocation density. The threading dislocation between the epitaxial film and the substrate is an effective non-radiative coincidence center, carriers are greatly reduced in a dislocation dense region due to the non-radiative recombination center, so that the radiative recombination efficiency is reduced, the internal quantum efficiency of the Micro-LED is reduced, and the luminous efficiency is influenced.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present application is to provide an epitaxial substrate and a method for manufacturing the same, which aims to solve the technical problem that the light emitting efficiency of a device is reduced due to threading dislocation of an epitaxial film in the prior art.
An epitaxial substrate, comprising:
a substrate;
the defect blocking layer is arranged on one side of the substrate; and
the nanometer pattern layer is arranged on one side of the defect blocking layer, which is far away from the substrate, and is composed of at least one layer of nanometer particles, and the nanometer particles enable one side of the nanometer pattern layer, which is far away from the substrate, to have a concave-convex surface.
When the epitaxial substrate provided by the application is used for carrying out the growth process of the epitaxial film, the defect blocking layer and the nano pattern layer in the epitaxial substrate can block the threading dislocation of the epitaxial substrate extending to the film, so that the carrier concentration is effectively increased, the radiation recombination probability and the internal quantum efficiency are improved, and the luminous efficiency of a device is further improved.
Optionally, the above nano-sized particles are polyhedral in structure. After the nano-scale particles with the polyhedral structure form the nano pattern layer, the surface of one side of the nano pattern layer far away from the substrate can be provided with planes parallel to a plurality of directions, so that the epitaxial film can be subjected to non-longitudinal growth, and the dislocation density of the epitaxial film is reduced.
Optionally, the nanoscale particles are silicon crystal particles. The silicon crystal particles are generally in a tetrahedral structure, the process is simple and easy to form through magnetron sputtering and other processes, and the nano pattern layer formed by the silicon crystal particles can effectively promote the longitudinal growth of the epitaxial film to be changed into the transverse growth, so that the dislocation density of the epitaxial film is reduced.
Optionally, the particle size of the nano-sized particles is 10 to 100nm. The nanoscale particles meeting the particle size range can enable the side, far away from the substrate, of the nanopattern layer to have a plurality of surfaces in different directions, so that dislocation density of the epitaxial film is further reduced by bending and merging dislocations through lateral growth of the grown epitaxial film.
Optionally, the defect blocking layer is SiN x A layer. SiN (SiN) x The layer has higher compactness, can effectively prevent penetration defects in the epitaxial substrate from extending into the epitaxial layer, and SiN x The layer process is simple, can be formed by magnetron sputtering and other processes, and adopts SiN x The formed defect blocking layer can effectively reduce the dislocation density of the epitaxial film, thereby improving the crystal quality of the epitaxial film.
Alternatively, the substrate is selected from any one of a sapphire substrate, a silicon substrate, and a silicon carbide substrate. The substrate of the type has higher hardness, thereby avoiding the influence of forming a defect blocking layer and/or a nano pattern layer on the reliability of the substrate by a magnetron sputtering process.
Based on the same inventive concept, the application also provides a manufacturing method of the epitaxial substrate, which comprises the following steps:
depositing a defect blocking layer on a substrate;
at least one layer of nano-sized particles is deposited on the defect-blocking layer to form a nanopatterned layer having a textured surface.
When the epitaxial substrate obtained by the manufacturing method is used for carrying out the growth process of the epitaxial film, the defect blocking layer and the nano pattern layer can block the threading dislocation of the epitaxial substrate extending to the film, so that the carrier concentration is effectively increased, the radiation recombination probability and the internal quantum efficiency are improved, and the luminous efficiency of a device is further improved.
Optionally, in the step of forming the defect blocking layer, a first magnetron sputtering process is adopted to bombard the silicon target material under the nitrogen-rich condition so as to form SiN on the substrate x A layer to obtain a defect blocking layer. In the first magnetron sputtering process, compact SiN is formed by bombarding a silicon target material under the condition of nitrogen enrichment x And a layer to block the substrate penetration defect from extending to the epitaxial layer.
Optionally, the substrate is placed in a reaction cavity, nitrogen is introduced, and the working pressure in the reaction cavity is adjusted to 0.5-5 Pa, so that a nitrogen-rich condition is formed. The nitrogen-rich condition formed under the working pressure can form compact SiN through the first magnetron sputtering process x And a layer to effectively block the propagation of substrate penetration defects to the epitaxial layer.
Optionally, in the step of forming the nanopattern layer, a second magnetron sputtering process is used to bombard the silicon target material under the silicon-rich condition to perform SiN x At least one layer of silicon crystal particles is formed on the layer. In the second magnetron sputtering process, the Si-Si particles are formed by bombarding the silicon target material under the silicon-rich condition, and the nano-scale pattern layer formed by the Si-Si particles is provided with a concave-convex surface on one side far away from the substrate due to the nano-scale pattern of the tetrahedral structure, so that the grown epitaxial film can bend and combine dislocation through lateral growth, and the longitudinal growth of the epitaxial film is changed into non-longitudinal growth such as transverse growth.
Optionally, the flow rate of nitrogen in the second magnetron sputtering process is made smaller than the flow rate of nitrogen in the first magnetron sputtering process to form a silicon-rich condition; or the working pressure in the reaction cavity in the second magnetron sputtering process is made to be larger than the working pressure in the reaction cavity in the first magnetron sputtering process so as to form a silicon-rich condition; or making the working temperature in the second magnetron sputtering process be greater than the working temperature in the first magnetron sputtering process so as to form a silicon-rich condition; or the sputtering power in the second magnetron sputtering process is made larger than that in the first magnetron sputtering process so as to form a silicon-rich condition. Silicon-rich conditions can be obtained in any of the alternative ways described above to form Si-Si form particles by a second magnetron sputtering process.
Drawings
Fig. 1 is a schematic view showing a partial cross-sectional structure of an epitaxial substrate provided in an embodiment of the present application;
fig. 2 is a flow chart illustrating a method for fabricating an epitaxial substrate according to an embodiment of the present application.
Reference numerals illustrate:
10-a substrate; 20-a defect blocking layer; 30-a nanopattern layer; 310-nanoscale particles.
Detailed Description
In order to facilitate an understanding of the present application, a more complete description of the present application will now be provided with reference to the relevant figures. Preferred embodiments of the present application are shown in the accompanying drawings. This application may, however, be embodied in many different forms and is not limited to the embodiments described herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. The terminology used herein in the description of the application is for the purpose of describing particular embodiments only and is not intended to be limiting of the application.
As described in the background section, the dominant epitaxial technique is now heteroepitaxy, which has a very high dislocation density. The threading dislocation between the epitaxial film and the substrate is an effective non-radiative coincidence center, carriers are greatly reduced in a dislocation dense region due to the non-radiative recombination center, so that the radiative recombination efficiency is reduced, the internal quantum efficiency of the Micro-LED is reduced, and the luminous efficiency is influenced.
Based on this, the present application intends to provide a solution to the above technical problem, the details of which will be explained in the following embodiments.
The inventors of the present application studied to solve the above problems and proposed an epitaxial substrate, as shown in fig. 1, comprising:
a substrate 10;
a defect blocking layer 20 disposed on one side of the substrate 10; and
the nanopattern layer 30 is disposed on a side of the defect blocking layer 20 away from the substrate 10, the nanopattern layer 30 is composed of at least one layer of nanoparticies 310, and the nanoparticies 310 provide a concave-convex surface on a side of the nanopattern layer 30 away from the substrate 10.
When the epitaxial substrate provided by the application is adopted to carry out the growth process of the epitaxial film, the defect blocking layer 20 and the nano pattern layer 30 in the epitaxial substrate can block the threading dislocation of the epitaxial substrate extending to the film, so that the carrier concentration is effectively increased, the radiation recombination probability and the internal quantum efficiency are improved, and the luminous efficiency of a device is further improved, meanwhile, as the nano pattern layer 30 is formed by at least one layer of nano-scale particles 310, one side of the nano pattern layer 30 far away from the substrate 10 is provided with a concave-convex surface by the nano-scale particles 310, so that the concave-convex surface is used for growing the surface, the growing epitaxial film can bend and combine the dislocation through lateral growth, the longitudinal growth of the epitaxial film is changed into non-longitudinal growth such as transverse growth, the dislocation density of the epitaxial film is further reduced, the crystal quality of the epitaxial film is improved, and the reduction of the luminous efficiency of the device caused by the threading dislocation of the epitaxial film in the prior art is effectively avoided.
In some embodiments, the substrate 10 may be a sapphire substrate 10, a silicon substrate 10, or a silicon carbide substrate 10. The above-described kind of substrate 10 has a high hardness, thereby avoiding the influence of the formation of the defect-blocking layer 20 and/or the nanopattern layer 30 by the magnetron sputtering process on the reliability of the substrate 10.
In some embodiments, the nanoscale particles 310 described above are polyhedral in structure. After the nano-patterned layer 30 is formed, the nano-scale particles 310 with the polyhedral structure can enable the surface of the nano-patterned layer 30, which is far away from the substrate 10, to have planes parallel to a plurality of directions, so that the epitaxial thin film can be subjected to non-longitudinal growth, and the dislocation density of the epitaxial thin film is reduced.
Illustratively, the nanoscale particles 310 are silicon crystal particles. The silicon crystal particles are generally tetrahedral in structure, and the process is simple and easy to form by magnetron sputtering and the like, and the nano pattern layer 30 formed by the silicon crystal particles can effectively promote the longitudinal growth of the epitaxial film to be changed into the transverse growth, so that the dislocation density of the epitaxial film is reduced.
In some embodiments, the nanoscale particles 310 have a particle size of 10 to 100nm. Nanoscale particles 310 satisfying the above-described particle size range enable the side of nanopattern layer 30 remote from substrate 10 to have a plurality of differently oriented surfaces, thereby further reducing dislocation density of the epitaxial film by allowing the grown epitaxial film to bend and merge dislocations by lateral growth.
Illustratively, the defect blocking layer 20 is SiN x A layer. SiN (SiN) x The layer has higher compactness, can effectively prevent penetration defects in the epitaxial substrate from extending into the epitaxial layer, and SiN x The layer process is simple, can be formed by magnetron sputtering and other processes, and adopts SiN x The defect blocking layer 20 is formed to effectively reduce the dislocation density of the epitaxial thin film, thereby improving the crystal quality of the epitaxial thin film.
The epitaxial substrate of the present application may be used in manufacturing processes of light emitting devices such as Micro light emitting diodes (Micro-LEDs), liquid Crystal Displays (LCDs), organic Light Emitting Semiconductors (OLEDs), and the application scenarios thereof are not limited.
Based on the same inventive concept, the present application further provides a method for manufacturing the epitaxial substrate, as shown in fig. 2, including the following steps:
depositing a defect blocking layer 20 on the substrate 10;
at least one layer of nano-sized particles 310 is deposited on the defect blocking layer 20 to form a nanopatterned layer 30 having a textured surface.
When the epitaxial substrate obtained by the manufacturing method is used for carrying out the growth process of the epitaxial film, the defect blocking layer 20 and the nano pattern layer 30 can block the threading dislocation of the epitaxial substrate extending to the film, so that the carrier concentration is effectively increased, the radiation recombination probability and the internal quantum efficiency are improved, and the luminous efficiency of the device is further improved, meanwhile, as the nano pattern layer 30 is formed by at least one layer of nano-scale particles 310, the nano-scale particles 310 enable one side of the nano pattern layer 30 far away from the substrate 10 to have a concave-convex surface, so that the concave-convex surface is used for growing the surface, the growing epitaxial film can bend and combine the dislocation through lateral growth, the longitudinal growth of the epitaxial film is changed into non-longitudinal growth such as transverse growth, the dislocation density of the epitaxial film is further reduced, the crystal quality of the epitaxial film is improved, and the reduction of the luminous efficiency of the device caused by the threading dislocation of the epitaxial film in the prior art is effectively avoided.
In some embodiments, the substrate 10 may be a sapphire substrate 10, a silicon substrate 10, or a silicon carbide substrate 10.
In some embodiments, a first magnetron sputtering process is used to deposit SiN on the substrate 10 x To obtain a defect barrier layer 20. In the first magnetron sputtering process, compact SiN can be formed by bombarding a silicon target material under the condition of nitrogen enrichment x And a layer to block the substrate penetration defect from extending to the epitaxial layer.
To form the defect blocking layer 20 under nitrogen-rich conditions using a first magnetron sputtering process, the first magnetron sputtering process includes the steps of:
step S101: placing the substrate 10 in a PVD reaction chamber, wherein the distance between the substrate 10 and the silicon target can be 30-100 mm;
step S102: the PVD reaction chamber was evacuated to a vacuum of 1X 10 -4 ～1×10 -8 Torr, andheating the substrate 10 to a pretreatment temperature of 300-700 ℃;
step S103, baking the substrate 10 for 2-15 minutes under the condition of step S102;
step S104, N is introduced 2 And the temperature of the substrate 10 is adjusted to 100-500 ℃ and the pressure in the cavity is adjusted to 0.5-5 Pa;
step S105, forming compact SiNx with sputtering power of 50-1000W under the nitrogen-rich condition in step S104, wherein the thickness can be 10-100 nm.
In some embodiments, a second magnetron sputtering process is used to deposit silicon crystal particles on the substrate 10 to obtain the nanopatterned layer 30. In the second magnetron sputtering process, the silicon target material can be bombarded under the condition of rich silicon to form Si-Si particles, the Si-Si particles can be regarded as nano-scale patterns with tetrahedral structures, and the nano-scale pattern layer formed by the Si-Si particles has concave-convex surfaces on the side far away from the substrate 10, so that the grown epitaxial film can bend and combine dislocation through lateral growth, and the longitudinal growth of the epitaxial film is changed into non-longitudinal growth such as transverse growth.
To form the nanopattern layer 30 under silicon-rich conditions using a second magnetron sputtering process, the second magnetron sputtering process, illustratively, includes the steps of:
step S201, closing a silicon target baffle, and adjusting the temperature of the silicon-rich condition of the reaction cavity to be 100-500 ℃ and the pressure to be 0.5-5 Pa;
step S202, when the reaction cavity reaches the silicon-rich condition, opening a silicon target baffle plate, and baking for a small amount of time to be less than 1min;
in step S203, si-Si particles, which can be regarded as a nano-scale pattern and at least one layer of Si-Si particles constitutes the nano-pattern layer 30, are formed on the SiNx surface using sputtering power under the Si-rich condition, and have a particle diameter of 10 to 100nm.
In order to achieve the silicon-rich condition in the reaction chamber, in the above step S201, N in the second magnetron sputtering process may be set 2 The flow of the metal oxide is smaller than N in the first magnetron sputtering process 2 The flow rate of the second magnetron sputtering can also be controlledThe working pressure in the reaction cavity in the process is greater than the working pressure in the reaction cavity in the first magnetron sputtering process, the working temperature in the second magnetron sputtering process can be greater than the working temperature in the first magnetron sputtering process, and the sputtering power in the second magnetron sputtering process can be greater than the sputtering power in the first magnetron sputtering process, so the mode for realizing the silicon-rich condition in the embodiment is not limited.
It is to be understood that the application of the present application is not limited to the examples described above, but that modifications and variations can be made by a person skilled in the art from the above description, all of which modifications and variations are intended to fall within the scope of the claims appended hereto.
Claims (6)
1. The manufacturing method of the epitaxial substrate is characterized by comprising the following steps of:
depositing a defect blocking layer on a substrate;
depositing at least one layer of continuous nano-scale particles having a polyhedral structure on the defect blocking layer to form a nano-pattern layer having a concave-convex surface,
and depositing silicon crystal particles on the substrate by adopting a second magnetron sputtering process to obtain the nano pattern layer, wherein the second magnetron sputtering process bombards a silicon target material under a silicon-rich condition to form Si-Si particles.
2. The epitaxial substrate of claim 1, wherein the nanoscale particles have a particle size of 10-100 nm.
3. The epitaxial substrate of claim 1 or 2, wherein the defect blocking layer is SiN x A layer.
4. The method of claim 1, wherein in the step of forming the defect-blocking layer, a first magnetron sputtering process is used to bombard a silicon target under nitrogen-rich conditions to form SiN on the substrate x A layer.
5. The method of claim 4, wherein the substrate is placed in a reaction chamber and nitrogen is introduced, and the working pressure in the reaction chamber is adjusted to 0.5-5 Pa to form the nitrogen-rich condition.
6. The method of claim 4, wherein,
the flow rate of nitrogen in the second magnetron sputtering process is smaller than that in the first magnetron sputtering process, so that the silicon-rich condition is formed; or (b)
The working pressure in the reaction cavity in the second magnetron sputtering process is made to be larger than the working pressure in the reaction cavity in the first magnetron sputtering process, so that the silicon-rich condition is formed; or (b)
The working temperature in the second magnetron sputtering process is made to be greater than the working temperature in the first magnetron sputtering process so as to form the silicon-rich condition; or (b)
And enabling the sputtering power in the second magnetron sputtering process to be larger than the sputtering power in the first magnetron sputtering process so as to form the silicon-rich condition.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0867980A (en) * | 1993-07-28 | 1996-03-12 | Asahi Glass Co Ltd | Production of silicon nitride film |
| US6596377B1 (en) * | 2000-03-27 | 2003-07-22 | Science & Technology Corporation @ Unm | Thin film product and method of forming |
| CN102485944A (en) * | 2010-12-03 | 2012-06-06 | 武汉迪源光电科技有限公司 | Epitaxial structure having epitaxial defect barrier layer |
| CN104272430A (en) * | 2012-04-26 | 2015-01-07 | 欧司朗光电半导体有限公司 | Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWM386591U (en) * | 2009-07-30 | 2010-08-11 | Sino American Silicon Prod Inc | Nano patterned substrate and epitaxial structure |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0867980A (en) * | 1993-07-28 | 1996-03-12 | Asahi Glass Co Ltd | Production of silicon nitride film |
| US6596377B1 (en) * | 2000-03-27 | 2003-07-22 | Science & Technology Corporation @ Unm | Thin film product and method of forming |
| CN102485944A (en) * | 2010-12-03 | 2012-06-06 | 武汉迪源光电科技有限公司 | Epitaxial structure having epitaxial defect barrier layer |
| CN104272430A (en) * | 2012-04-26 | 2015-01-07 | 欧司朗光电半导体有限公司 | Epitaxy substrate, method for producing an epitaxy substrate and optoelectronic semiconductor chip comprising an epitaxy substrate |
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