CN114024540A - W-band single-pole double-throw switch based on spiral coupling differential inductor - Google Patents

W-band single-pole double-throw switch based on spiral coupling differential inductor Download PDF

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Publication number
CN114024540A
CN114024540A CN202111297522.9A CN202111297522A CN114024540A CN 114024540 A CN114024540 A CN 114024540A CN 202111297522 A CN202111297522 A CN 202111297522A CN 114024540 A CN114024540 A CN 114024540A
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mos transistor
inductor
resistor
spiral coupling
switch
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Inventor
徐余龙
张炎
曹锐
姜力晖
李庄
彭国良
陶小辉
荣大伟
徐晓荣
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CETC 38 Research Institute
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CETC 38 Research Institute
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K17/00Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/56Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
    • H03K17/687Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits

Abstract

The invention discloses a W-band single-pole double-throw switch based on spiral coupling differential inductance, which comprises a first switch circuit, a first spiral coupling structure, a second spiral coupling structure and a second switch circuit which are connected in sequence, wherein the first switch circuit and the second switch circuit are the same in structure, the first spiral coupling structure and the second spiral coupling structure are the same in structure, the first spiral coupling structure is an octagonal structure which is formed by overlapping and coupling two inductances and is provided with two ports, a differential signal input port is arranged on a connecting line between the first spiral coupling structure and the second spiral coupling structure, the output end of the first switch circuit is a first differential signal output port, and the output end of the second switch circuit is a second differential signal output port; the invention has the advantages that: the circuit has common mode rejection capability and ensures the stability of a post-stage circuit.

Description

W-band single-pole double-throw switch based on spiral coupling differential inductor
Technical Field
The invention relates to the technical field of single-pole double-throw switches, in particular to a W-band single-pole double-throw switch based on spiral coupling differential inductance.
Background
With the wide application of millimeter wave frequency bands (30-300 GHz) in the fields of high-resolution radar imaging, high-data-rate communication, automobile anti-collision radar, medical treatment, safety protection, remote sensing imaging and the like, millimeter wave circuits gradually become research hotspots in the industry.
A single-pole double-throw (SPDT) switch is a key part in a modern communication transceiving system and is widely applied to wireless communication systems such as an active phase shifter, a phased array and the like. The single-pole double-throw switch is used for switching the working state of the system, and the switching of signals is controlled by switching off and on the switch, so that the switching between a receiving mode and a transmitting mode is realized. The insertion loss and isolation of the single-pole double-throw switch have important influence on the system performance. In the millimeter wave switch, the parasitic capacitance, on-resistance, loss, isolation, etc. of the transistor may affect the circuit performance. In a transceiver system for transmitting differential signals, a single-pole double-throw switch needs to have common-mode rejection capability.
Chinese patent publication No. CN113162647A discloses a broadband multifunctional transceiver module in a phased array system. The multi-functional transceiver component in broadband of this patent application adopts emission module and receiving module sharing to move looks ware and low noise amplifier's leg structure altogether, realizes flat gain in the frequency channel to realize that the 6bit precision of 360 within ranges is shifted the phase and 5.8bit precision attenuation in 0 ~ 28.5dB within ranges, concrete structure includes: the high-linearity low-noise amplifier, the attenuator, the single-pole double-throw switch, the low-noise amplifier, the phase shifter, the single-pole double-throw switch and the power amplifier are sequentially connected. The transceiving component can ensure the flatness and high linearity of output spectrums of the receiving module and the transmitting module on a broadband wave band; the phase shifter synthesizes the required amplitude through the switch control sub-gain unit, solves the problem of phase shift accuracy reduction, and simultaneously does not need to design a complex high-order DAC to provide bias current with large-range change for the VGA. However, the single-pole double-throw switch in the patent application is of a conventional structure, does not have common-mode rejection capability, and cannot ensure the stability of a post-stage circuit.
Disclosure of Invention
The invention aims to solve the technical problem that a single-pole double-throw switch in the prior art does not have common-mode rejection capability and cannot ensure the stability of a post-stage circuit.
The invention solves the technical problems through the following technical means: the utility model provides a W wave band single-pole double-throw switch based on spiral coupling differential inductance, includes first switch circuit, first spiral coupling structure, second spiral coupling structure and the second switch circuit that connects in order, first switch circuit is the same with second switch circuit structure, and first spiral coupling structure is the same with second spiral coupling structure's structure, and first spiral coupling structure is the octagon structure that has two ports that two inductance superposes coupling become, set up differential signal input port on the line between first spiral coupling structure and the second spiral coupling structure, first switch circuit's output is first differential signal output port, second switch circuit's output is second differential signal output port.
According to the single-pole double-throw switch, the layout of the wiring is changed, the first spiral coupling structure and the second spiral coupling structure are designed into an octagonal structure with two ports formed by superposing and coupling two inductors, the area of the inductors is reduced by half due to the overlapping of the two inductors, the inductance value can be increased to a certain extent due to mutual inductance between the two inductors for differential signals, common-mode signals can be inhibited when radio-frequency signals flow through the overlapped adjacent inductors, and the stability of a rear-stage circuit is guaranteed.
Further, the first switch circuit comprises a resistor R1, a resistor R2, a resistor R6, a resistor R5 and a MOS transistor M1MOS transistor M2MOS transistor M5MOS transistor M6An inductor L3 and an inductor L5, one end of the inductor L3 and a MOS transistor M1Is connected with one end of one port of the first spiral coupling structure, and the other end of the inductor L3 is connected with the MOS transistor M2Is connected with the drain of the MOS transistor M, one end of the resistor R2 is connected with the MOS transistor M2The other end of the resistor R2 is connected with the MOS transistor M through a resistor R11The gate of (1) is connected; one end of inductor L5 and MOS transistor M5Is connected with the other end of one port of the first spiral coupling structure, and the other end of the inductor L5 is connected with the MOS transistor M6Is connected with the drain of the MOS transistor M, one end of the resistor R6 is connected with the MOS transistor M6The other end of the resistor R6 is connected with the MOS transistor M through a resistor R55The gate of (1) is connected; MOS transistor M2Source electrode and MOS tube M6The source electrode of the MOS transistor M is connected and grounded, and the MOS transistor M1Source electrode and MOS tube M5Is connected with the ground, and a power supply is connected between the other end of the resistor R2 and the other end of the resistor R6
Figure BDA0003337076410000031
The other end of the resistor L3 and the other end of the resistor L5 are used as a first differential signal output port.
Furthermore, the resistor R1, the resistor R2 and the MOS transistor M1MOS transistor M2The inductor L3 forms a switch, the resistor R6, the resistor R5 and the MOS transistor M5MOS transistor M6And the inductor L5 form a switch, the working modes of the two switches are the same, the on-off of the switch is controlled by controlling the grid voltage of the MOS tube, and when the MOS tube M is used1Or MOS transistor M2When the grid voltage is high, the MOS transistor M1Or MOS transistor M2Conducting, the signal passes through MOS transistor M1Or MOS transistor M2When the current flows into the ground, the switch is turned off when the MOS transistor M1And or MOS transistor M2When the grid voltage of the MOS transistor M is low level, the MOS transistor M1And MOS transistor M2All are turned off, the signal is transmitted to the output end, and the switch is turned on.
Furthermore, the W-band single-pole double-throw switch is applied to a phased array transceiver front-end system, the phased array transceiver front-end system includes a receiving end and a transmitting end, a first differential signal output port of the first switch circuit is connected with the receiving end, and a second differential signal output port of the second switch circuit is connected with the transmitting end.
Furthermore, when the phased array transceiving end front-end system is in a receiving state, the switch in the first switch circuit is controlled to be in a conducting state, the W-band single-pole double-throw switch is connected with the receiving end, the switch in the second switch circuit is controlled to be in a switching-off state, and a transmitting end signal is isolated; when the phased array transceiving end front-end system is in a transmitting state, the switch in the second switch circuit is controlled to be in a conducting state, the W-band single-pole double-throw switch is connected with the transmitting end, the switch in the first switch circuit is controlled to be in a switching-off state, and a receiving end signal is isolated.
Furthermore, the first spiral coupling structure comprises a first inductor, the first inductor comprises a first connecting piece, a second connecting piece, a third connecting piece and a fourth connecting piece, the first connecting piece is located on the first layer, the third connecting piece is located on the second layer, the second connecting piece and the fourth connecting piece are located on the third layer, the first connecting piece and the second connecting piece are connected through a metal through hole, the second connecting piece and the third connecting piece are communicated through a metal through hole, and the third connecting piece and the fourth connecting piece are communicated through a metal through hole.
Furthermore, the first spiral coupling structure further comprises a second inductor, the second inductor comprises a fifth connecting piece, a sixth connecting piece and a seventh connecting piece, the fifth connecting piece is located on the first layer, the sixth connecting piece is located on the second layer, the seventh connecting piece is located on the third layer, the fifth connecting piece and the sixth connecting piece are connected through a metal through hole, and the sixth connecting piece and the seventh connecting piece are communicated through a metal through hole.
Furthermore, the first inductor and the second inductor are superposed, the lengths of the first inductor and the second inductor are the same, the first connecting piece is parallel to the fifth connecting piece, the second connecting piece and the upper portion of the seventh connecting piece are integrally in a first octagon shape, the fourth connecting piece and the lower portion of the seventh connecting piece are integrally in a second octagon shape, the diameter of the first octagon shape is smaller than that of the second octagon shape, and the first octagon shape is located inside the second octagon shape.
The invention has the advantages that:
(1) according to the single-pole double-throw switch, the layout of the wiring is changed, the first spiral coupling structure and the second spiral coupling structure are designed into an octagonal structure with two ports formed by superposing and coupling two inductors, the area of the inductors is reduced by half due to the overlapping of the two inductors, the inductance value can be increased to a certain extent due to mutual inductance between the two inductors for differential signals, common-mode signals can be inhibited when radio-frequency signals flow through the overlapped adjacent inductors, and the stability of a rear-stage circuit is guaranteed.
(2) The invention adopts the parallel MOS tube and the inductor to match, so as to reduce the influence of parasitic capacitance.
(3) The resistors R1, R2, R3, R4, R5, R6, R7 and R8 are isolation resistors and are all connected to the grid of the MOS tube, so that grid oxygen breakdown and signal leakage can be prevented, and the parasitic capacitance coupling effect can be reduced.
(4) The MOS tube can be equivalent to a grounded on-resistance when being opened, and higher isolation can be obtained compared with a parallel single tube. When the MOS tube is switched off, the first spiral coupling structure or the second spiral coupling structure and the equivalent capacitance of the MOS tube form a pi-type filter network capable of realizing matching in a wider frequency band.
(5) The layout routing layout of the first spiral coupling structure and the second spiral coupling structure adopts an octagonal spiral coupling mode, and the two transmission differential signals are ensured to be overlapped by the same inductance value. The length of the differential transmission lines is consistent, so that the transmission time delay is consistent, the polarities of the differential signals are opposite, and the quality of the transmission signals is not influenced.
Drawings
Fig. 1 is a schematic circuit diagram of a W-band single-pole double-throw switch based on a spiral coupling differential inductor according to an embodiment of the present invention;
fig. 2 is an exploded schematic view of a first spiral coupling structure L1 in a W-band single-pole double-throw switch based on spiral coupling differential inductance according to an embodiment of the present invention;
fig. 3 is a schematic overall structure diagram of a first spiral coupling structure L1 in a W-band single-pole double-throw switch based on spiral coupling differential inductance according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a first inductor of a first spiral coupling structure L1 in a W-band single-pole double-throw switch based on a spiral coupling differential inductor according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a second inductor of a first spiral coupling structure L1 in a W-band single-pole double-throw switch based on a spiral coupling differential inductor according to an embodiment of the present invention;
fig. 6 is a plan view of a first spiral coupling structure L1 in a W-band single-pole double-throw switch based on spiral coupling differential inductance according to an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are some embodiments of the present invention, but not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
As shown in fig. 1, a W-band single-pole double-throw switch based on a spiral coupling differential inductor includes a first switch circuit, a first spiral coupling structure L1, a second spiral coupling structure L2, and a second switch circuit, which are connected in sequence, where the first switch circuit and the second switch circuit have the same structure, the first spiral coupling structure L1 and the second spiral coupling structure L2 have the same structure, the first spiral coupling structure L1 is an octagonal structure formed by coupling two inductors in a superposition manner, a connection line between the first spiral coupling structure L1 and the second spiral coupling structure L2 is provided with a differential signal input port, an output end of the first switch circuit is a first differential signal output port, and an output end of the second switch circuit is a second differential signal output port.
The first switch circuit comprises a resistor R1, a resistor R2, a resistor R6, a resistor R5 and a MOS transistor M1MOS transistor M2MOS transistor M5MOS transistor M6An inductor L3 and an inductor L5, one end of the inductor L3 and a MOS transistor M1Is connected with one end of one port of the first spiral coupling structure L1, and the other end of the inductor L3 is connected with the MOS transistor M2Is connected with the drain of the MOS transistor M, one end of the resistor R2 is connected with the MOS transistor M2The other end of the resistor R2 is connected with the MOS transistor M through a resistor R11The gate of (1) is connected; one end of inductor L5 and MOS transistor M5Is connected with the other end of one port of the first spiral coupling structure L1, and the other end of the inductor L5 is connected with the MOS transistor M6Is connected with the drain of the MOS transistor M, one end of the resistor R6 is connected with the MOS transistor M6The other end of the resistor R6 is connected with the MOS transistor M through a resistor R55The gate of (1) is connected; MOS transistor M2Source electrode and MOS tube M6The source electrode of the MOS transistor M is connected and grounded, and the MOS transistor M1Source electrode and MOS tube M5Is connected with the ground, and a power supply is connected between the other end of the resistor R2 and the other end of the resistor R6
Figure BDA0003337076410000071
The other end of the resistor L3 and the other end of the resistor L5 are used as a first differential signal output port.
MOS transistor M1、M2And inductor L3, MOS transistor M3、M4And inductor L4, MOS transistor M5、M6And inductor L5, MOS transistor M7、M8And an inductor L6, with a total of 4 switches forming a differential single pole double throw switch configuration. The inductors L1, L2 function as impedance matching. The resistors R1, R2, R3, R4, R5, R6, R7 and R8 are isolation resistors and are all connected to the grid of the MOS transistor, the resistance value of the isolation resistors is 2000 omega, the gate oxide breakdown and signal leakage can be prevented, the parasitic capacitance coupling effect can be reduced, the working modes of all the switches are the same, the on-off of the switches is controlled by controlling the grid voltage of the MOS transistor, and when the MOS transistor M is connected with the MOS transistor M, the on-off of the switches is controlled by controlling the grid voltage of the MOS transistor M1Or MOS transistor M2When the grid voltage is high, the MOS transistor M1Or MOS transistor M2Conducting, the signal passes through MOS transistor M1Or MOS transistor M2The water flows into the ground and then flows into the ground,the switch is turned off when the MOS transistor M1And or MOS transistor M2When the grid voltage of the MOS transistor M is low level, the MOS transistor M1And MOS transistor M2All are turned off, the signal is transmitted to the output end, and the switch is turned on.
The W-band single-pole double-throw switch is applied to a phased array receiving and transmitting end front end system, the phased array receiving and transmitting end front end system comprises a receiving end and a transmitting end, a first differential signal output port of the first switch circuit is connected with the receiving end, and a second differential signal output port of the second switch circuit is connected with the transmitting end. When the phased array transceiving end front-end system is in a receiving state, controlling a switch in a first switch circuit to be in a conducting state, switching on a receiving end by a W-band single-pole double-throw switch, controlling a switch in a second switch circuit to be in a switching-off state, and isolating a transmitting end signal; when the phased array transceiving end front-end system is in a transmitting state, the switch in the second switch circuit is controlled to be in a conducting state, the W-band single-pole double-throw switch is connected with the transmitting end, the switch in the first switch circuit is controlled to be in a switching-off state, and a receiving end signal is isolated.
The upper part and the lower part of the transmission differential signal are symmetrical in structure, and the structure of the parallel MOS tube and the resonance inductor is designed to offset the influence caused by the parasitic capacitance of the transistor and simultaneously keep the matching of impedance.
The input matching inductors (the first spiral coupling structure L1 and the second spiral coupling structure L2) for transmitting differential signals adopt an octagonal spiral coupling mode. The overlapping of the two transmission differential signals with the same inductance value is ensured, and the layout area is reduced. The lengths of the differential transmission lines are consistent, so that the signal transmission time delay is consistent, the polarities of the differential signals are opposite, and the quality of the transmission signals is not influenced. When the differential mode signal is transmitted, the directions of currents flowing through the two inductors are the same; when the common-mode signal is transmitted, the directions of currents flowing in the two inductors are opposite.
As shown in fig. 2 to 5, the first spiral coupling structure L1 includes a first inductor, the first inductor includes a first connecting part 1, a second connecting part 2, a third connecting part 3, and a fourth connecting part 4, the first connecting part 1 is located on the first layer, the third connecting part 3 is located on the second layer, the second connecting part 2 and the fourth connecting part 4 are located on the third layer, the first connecting part 1 and the second connecting part 2 are connected through a metal via, the second connecting part 2 and the third connecting part 3 are communicated through a metal via, and the third connecting part 3 and the fourth connecting part 4 are communicated through a metal via.
With continued reference to fig. 2 to 5, the first spiral coupling structure L1 further includes a second inductor, the second inductor includes a fifth connection element 5, a sixth connection element 6 and a seventh connection element 7, the fifth connection element 5 is located on the first layer, the sixth connection element 6 is located on the second layer, the seventh connection element 7 is located on the third layer, the fifth connection element 5 and the sixth connection element 6 are connected by a metal via, and the sixth connection element 6 and the seventh connection element 7 are communicated by a metal via.
With reference to fig. 2 to 5, the first inductor and the second inductor are stacked and have the same length, the first connecting element 1 is parallel to the fifth connecting element 5, the second connecting element 2 and the upper portion of the seventh connecting element 7 are integrally formed as a first octagon, the fourth connecting element 4 and the lower portion of the seventh connecting element 7 are integrally formed as a second octagon, the diameter of the first octagon is smaller than that of the second octagon, and the first octagon is located inside the second octagon. The overlapping of the two inductors in the layout reduces the area of the inductor by half. For differential signals, the mutual inductance between the two spiral inductors may increase the inductance value to some extent. And the radio frequency signal can be suppressed when flowing through the overlapped adjacent spiral inductor.
In this embodiment, the W-band single-pole double-throw switch input matching inductor is designed in the layout of the electromagnetic simulation software by using AM, LY, and MQ metal layers, where AM is the third layer, LY is the second layer, and MQ is the first layer. As shown in fig. 6, the line widths of the metal lines are all 4 μm, the outer diameter of the outermost metal line is 74 μm, the outer diameter of the middle metal line is 50 μm, the outer diameter of the innermost metal line is 18 μm, the distance between the first circle of metal lines and the second circle of metal lines is 8 μm, the distance between the second circle of metal lines and the third circle of metal lines is 12 μm, and the distances between the incoming and outgoing transmission lines are all 10 μm. The W-band single-pole double-throw switch is characterized in that the upper half part of an input matching inductor AM layer octagonal metal coil is connected with a LY layer metal wire through an AM-LY hole (a metal through hole between an AM layer and a LY), then is connected with the lower half part of the AM layer inner side octagonal metal coil through the LY-AM hole (a metal through hole between the LY layer and the AM), is connected with a third layer metal wire through a metal trace on the AM layer, and is connected with a transmission line of a wire outlet port of an MQ layer through AM-LY and LY-MQ holes. The lower half part of the AM layer octagonal metal coil is connected with the upper half part of the inner layer octagonal metal coil through a metal trace, is connected with a metal jumper wire of a LY layer through an AM-LY hole, is then connected to a third layer metal wire, and is then connected with an outlet port transmission line of an MQ layer through a LY-MQ hole. The lengths of the wire inlet and outlet ports are consistent.
Through the technical scheme, the single-pole double-throw switch disclosed by the invention has the advantages that the layout of the wiring is changed, the first spiral coupling structure L1 and the second spiral coupling structure L2 are designed into an octagonal structure which is formed by superposing and coupling two inductors and is provided with two ports, the area of the inductor is reduced by half due to the overlapping of the two inductors, the inductance value can be increased to a certain extent due to the mutual inductance between the two inductors for differential signals, common-mode signals can be inhibited when radio-frequency signals flow through the overlapped adjacent inductors, and the stability of a rear-stage circuit is ensured.
The above examples are only intended to illustrate the technical solution of the present invention, but not to limit it; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.

Claims (8)

1. The utility model provides a W wave band single-pole double-throw switch based on spiral coupling differential inductance, its characterized in that, includes first switch circuit, first spiral coupling structure, second spiral coupling structure and the second switch circuit that connects in order, first switch circuit is the same with second switch circuit structure, and first spiral coupling structure is the same with second spiral coupling structure's structure, and first spiral coupling structure is the octagon structure that has two ports that two inductance stack coupling become, set up differential signal input port on the line between first spiral coupling structure and the second spiral coupling structure, first switch circuit's output is first differential signal output port, second switch circuit's output is second differential signal output port.
2. The W-band single-pole double-throw switch based on the spiral coupled differential inductor as claimed in claim 1, wherein the first switch circuit comprises a resistor R1, a resistor R2, a resistor R6, a resistor R5, a MOS transistor M1MOS transistor M2MOS transistor M5MOS transistor M6An inductor L3 and an inductor L5, one end of the inductor L3 and a MOS transistor M1Is connected with one end of one port of the first spiral coupling structure, and the other end of the inductor L3 is connected with the MOS transistor M2Is connected with the drain of the MOS transistor M, one end of the resistor R2 is connected with the MOS transistor M2The other end of the resistor R2 is connected with the MOS transistor M through a resistor R11The gate of (1) is connected; one end of inductor L5 and MOS transistor M5Is connected with the other end of one port of the first spiral coupling structure, and the other end of the inductor L5 is connected with the MOS transistor M6Is connected with the drain of the MOS transistor M, one end of the resistor R6 is connected with the MOS transistor M6The other end of the resistor R6 is connected with the MOS transistor M through a resistor R55The gate of (1) is connected; MOS transistor M2Source electrode and MOS tube M6The source electrode of the MOS transistor M is connected and grounded, and the MOS transistor M1Source electrode and MOS tube M5Is connected with the ground, and a power supply is connected between the other end of the resistor R2 and the other end of the resistor R6
Figure FDA0003337076400000011
The other end of the resistor L3 and the other end of the resistor L5 are used as a first differential signal output port.
3. The W-band single-pole double-throw switch based on the spiral coupled differential inductor as claimed in claim 2, wherein the resistor R1, the resistor R2 and the MOS transistor M are arranged in sequence1MOS transistor M2The inductor L3 forms a switch, the resistor R6, the resistor R5 and the MOS transistor M5MOS transistor M6And an inductor L5 form a switch, the working modes of the two switches are the same, and the MO is controlledThe grid voltage of the S tube controls the on-off of the switch, and when the MOS tube M is used1Or MOS transistor M2When the grid voltage is high, the MOS transistor M1Or MOS transistor M2Conducting, the signal passes through MOS transistor M1Or MOS transistor M2When the current flows into the ground, the switch is turned off when the MOS transistor M1And or MOS transistor M2When the grid voltage of the MOS transistor M is low level, the MOS transistor M1And MOS transistor M2All are turned off, the signal is transmitted to the output end, and the switch is turned on.
4. The W-band single-pole double-throw switch based on the spiral coupled differential inductor is applied to a phased array transceiver front-end system, the phased array transceiver front-end system comprises a receiving end and a transmitting end, a first differential signal output port of the first switch circuit is connected with the receiving end, and a second differential signal output port of the second switch circuit is connected with the transmitting end.
5. The W-band single-pole double-throw switch based on the spiral coupling differential inductor is characterized in that when a phased array transceiving end front-end system is in a receiving state, a switch in a first switch circuit is controlled to be in a conducting state, the W-band single-pole double-throw switch is switched on a receiving end, a switch in a second switch circuit is controlled to be in a switching-off state, and a transmitting end signal is isolated; when the phased array transceiving end front-end system is in a transmitting state, the switch in the second switch circuit is controlled to be in a conducting state, the W-band single-pole double-throw switch is connected with the transmitting end, the switch in the first switch circuit is controlled to be in a switching-off state, and a receiving end signal is isolated.
6. The W-band single-pole double-throw switch based on the spiral coupling differential inductor as claimed in claim 1, wherein the first spiral coupling structure comprises a first inductor, the first inductor comprises a first connecting piece, a second connecting piece, a third connecting piece and a fourth connecting piece, the first connecting piece is located on a first layer, the third connecting piece is located on a second layer, the second connecting piece and the fourth connecting piece are located on a third layer, the first connecting piece and the second connecting piece are connected through a metal via hole, the second connecting piece and the third connecting piece are communicated through a metal via hole, and the third connecting piece and the fourth connecting piece are communicated through a metal via hole.
7. The W-band single-pole double-throw switch based on the spiral coupling differential inductor as claimed in claim 6, wherein the first spiral coupling structure further comprises a second inductor, the second inductor comprises a fifth connecting member, a sixth connecting member and a seventh connecting member, the fifth connecting member is located on the first layer, the sixth connecting member is located on the second layer, the seventh connecting member is located on the third layer, the fifth connecting member and the sixth connecting member are connected through a metal via, and the sixth connecting member and the seventh connecting member are communicated through a metal via.
8. The W-band single-pole double-throw switch based on the spiral coupled differential inductor as claimed in claim 7, wherein the first inductor is overlapped with the second inductor, the length of the first inductor is the same as that of the second inductor, the first connecting member is parallel to the fifth connecting member, the second connecting member and the upper portion of the seventh connecting member integrally form a first octagon, the fourth connecting member and the lower portion of the seventh connecting member integrally form a second octagon, the diameter of the first octagon is smaller than that of the second octagon, and the first octagon is located inside the second octagon.
CN202111297522.9A 2021-11-04 2021-11-04 W-band single-pole double-throw switch based on spiral coupling differential inductor Pending CN114024540A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115101904A (en) * 2022-05-30 2022-09-23 南京邮电大学 Low-loss single-switch broadband microwave 180-degree phase shifter
CN116846381A (en) * 2023-08-31 2023-10-03 宜确半导体(苏州)有限公司 Differential circuit, phase shifter, attenuator and radio frequency microwave system

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115101904A (en) * 2022-05-30 2022-09-23 南京邮电大学 Low-loss single-switch broadband microwave 180-degree phase shifter
CN115101904B (en) * 2022-05-30 2023-12-01 南京邮电大学 Low loss single switch broadband microwave 180 degree phase shifter
CN116846381A (en) * 2023-08-31 2023-10-03 宜确半导体(苏州)有限公司 Differential circuit, phase shifter, attenuator and radio frequency microwave system
CN116846381B (en) * 2023-08-31 2023-11-28 宜确半导体(苏州)有限公司 Differential circuit, phase shifter, attenuator and radio frequency microwave system

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