CN113998666B - High-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain - Google Patents

High-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain Download PDF

Info

Publication number
CN113998666B
CN113998666B CN202111226499.4A CN202111226499A CN113998666B CN 113998666 B CN113998666 B CN 113998666B CN 202111226499 A CN202111226499 A CN 202111226499A CN 113998666 B CN113998666 B CN 113998666B
Authority
CN
China
Prior art keywords
graphene
electronic skin
density
artificial electronic
nucleation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202111226499.4A
Other languages
Chinese (zh)
Other versions
CN113998666A (en
Inventor
赵静
李春阳
李忠燚
张凡青
黎宏林
董立新
黄强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Beijing Institute of Technology BIT
Original Assignee
Beijing Institute of Technology BIT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Institute of Technology BIT filed Critical Beijing Institute of Technology BIT
Priority to CN202111226499.4A priority Critical patent/CN113998666B/en
Publication of CN113998666A publication Critical patent/CN113998666A/en
Application granted granted Critical
Publication of CN113998666B publication Critical patent/CN113998666B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0014—Array or network of similar nanostructural elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Molecular Biology (AREA)
  • General Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Composite Materials (AREA)
  • Materials Engineering (AREA)
  • Carbon And Carbon Compounds (AREA)

Abstract

The invention discloses a high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain, which comprises a flexible substrate, an electrode pattern array prepared from low-density nucleation graphene and a channel prepared from high-density nucleation graphene and having sensitive mechanical response, wherein the electrode pattern array is formed by the low-density nucleation graphene; the electrode pattern array and the channel are arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel; the beneficial effects of the invention are as follows: the artificial electronic skin can be prepared in a large area, so that the artificial electronic skin can be processed, a device array with stable mechanical properties can be produced in batches, the artificial electronic skin of all grapheme can bear ultra-large strain and is not broken, and the sensitivity factor of the artificial electronic skin based on grapheme to external strain response is greatly improved; the preparation process is compatible with the existing semiconductor processing technology, namely the artificial electronic skin has good application potential and wide application value.

Description

High-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain
Technical Field
The invention belongs to the technical field of nanotechnology, and particularly relates to a high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain, which can be used in the fields of artificial electronic skin, flexible touch screens, wearable health monitoring equipment and the like.
Background
Artificial electronic skin, also called skin-like electronics, is an electronic system that mimics the function of human skin, consisting of a series of highly sensitive electronic components. Besides good flexibility and elasticity like skin, the sensor has the capability of sensing the change of external environment (temperature, humidity, stress and the like), and can be widely applied to the fields of robots, monitoring technologies and the like. At the heart of the artificial electronic skin is a sensor part, and different types of sensors can sense the changes of conditions such as stress, temperature, humidity and the like in the external environment in real time so as to be converted into corresponding electric signals. In recent years, considering new requirements for miniaturization and structural flexibility of devices, two-dimensional materials have been rapidly developed in research of artificial electronic skin due to excellent electrical and mechanical properties thereof, wherein the monoatomic layer structure of graphene better satisfies the requirements of lightness and thinness of the artificial electronic skin.
Graphene is the lightest material so far and has excellent mechanical strength, 100 times that of steel materials, and has tensile strength and elastic modulus of 125GPa and 1.1TPa respectively, which are the largest mechanical strength among the currently known materials, and the stretchability also makes it possible to show great potential in flexible electronics applications. In addition, the good transparent conductivity (mobility exceeding 20,000cm < 2 >/Vs) and the random bending property of the graphene along with the substrate can provide possibility for the wide application of the graphene in artificial point skin.
While graphene's various excellent properties offer the potential for its application to artificial electronic skin, its zero bandgap energy band structure determines that it is more similar to a semi-metallic material, whose resistivity changes when stress is applied, where poisson's ratio represents the rate at which cross-sectional area decreases with increasing length. Since the change in value is small, the change in resistance caused by the geometrical deformation alone is small. While the energy band of perfect graphene that wants to open exfoliation requires application of a uniaxial strain exceeding 23%. Previous studies have therefore developed a stress sensor that changes resistance change by changing the contact area between graphene sheets. In this model, graphene sheets are not connected in a seamless manner in a plane, but are overlapped with each other to some extent, and the resistance of the overlapped graphene portions is reduced relative to a single layer. Therefore, when tensile stress and compressive stress are applied respectively, the contact area of the graphene of the overlapped part is correspondingly reduced and increased, thereby bringing about a change in resistance. Compared with a graphene stress sensor utilizing deformation, the sensitivity factor of the stress sensor obtained by the method for changing the contact area when stress is applied can be improved to about 10-100, but the sensitivity required in application is still quite different from that of the graphene stress sensor based on the principle, the sensitivity of the graphene stress sensor is greatly dependent on the superposition degree among graphene sheets, and therefore the repeatability among different samples is not good. In addition, the graphene artificial electronic skin using metal as an electrode is subjected to limited strain (< 5%) due to the limitation that the metal electrode is easily broken under a large strain.
Disclosure of Invention
The main purpose of the application is to obtain graphene films with different nuclear densities by controlling different growth conditions based on nano graphene obtained by a plasma enhanced chemical vapor deposition method, wherein the difference of tunneling effects of the different films are respectively used as a sensing channel and an electrode part, so that the full-graphene artificial electronic skin with high transparency and high sensitivity (the sensitivity factor is more than 500) and capable of resisting large strain (> 100%) is realized. In addition, through regulating and controlling different conditions of growing graphene, the flexible full-graphene device array with adjustable sensitivity and adaptation to different strain environments can be obtained, so that novel artificial electronic skin exceeding the human skin touch function is realized, and the novel artificial electronic skin can be used in the fields of future wearable equipment, touch screens and the like.
In order to achieve the above object, the present invention provides the following technical solutions:
a high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain comprises a flexible substrate, an electrode pattern array made of low-density nucleation graphene and a channel made of high-density nucleation graphene and having sensitive mechanical response; the electrode pattern array and the channel are arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel.
Graphene films with different nuclear densities are obtained by regulating and controlling the growth temperature of a plasma enhanced chemical vapor deposition system. The high nucleation density graphene has obvious tunneling effect, so that current can be obviously changed along with the strain under the action of stress, and the mechanical sensing function is realized; the graphene obtained by low-density nucleation can realize the function of an electrode due to small resistance and insignificant influence of tunneling effect. Under the condition of applying larger tensile stress, the conditions of electrode fracture and the like are effectively avoided, and the stability of the function of the device is ensured.
The above-mentioned high-sensitivity full graphene artificial electronic skin capable of resisting ultra-large strain, as a preferred embodiment, the flexible substrate is: PET flexible substrate, PI flexible substrate, PDMS flexible substrate.
The PET flexible substrate is a polyethylene terephthalate flexible substrate. The high-temperature-resistant high-voltage cable has excellent physical and mechanical properties in a wider temperature range, can be used for 120 ℃ for a long time, has excellent electrical insulation property, and even under high temperature and high frequency, has better electrical property, but has poor corona resistance, creep resistance, fatigue resistance, friction resistance and dimensional stability.
The PI flexible substrate is a polyimide flexible substrate, is a material with the best temperature resistance in the existing polymer materials, has excellent chemical stability and mechanical property, and is considered as a flexible substrate material with great potential.
The PDMS flexible substrate is an organosilicon polydimethylsiloxane flexible substrate, and has the advantages of convenience, easiness in obtaining, stable chemical property, transparency, good thermal stability, low Young modulus, skin friendliness, good electronic material adhesion and the like.
According to the high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain, as a preferred implementation scheme, the size of the graphene island obtained by low-density nucleation is 15-30 nm, and the size of the graphene island obtained by high-density nucleation is 5-10 nm.
Graphene films with different nuclear densities are obtained by regulating and controlling the growth temperature of a plasma enhanced chemical vapor deposition system. The high nucleation density graphene has obvious tunneling effect, so that current can be obviously changed along with the strain under the action of stress, and the mechanical sensing function is realized; the graphene obtained by low-density nucleation can realize the function of an electrode due to small resistance and insignificant influence of tunneling effect. Under the condition of applying larger tensile stress, the conditions of electrode fracture and the like are effectively avoided, and the stability of the function of the device is ensured.
In a second aspect of the present application, a method for preparing a high-sensitivity all-graphene artificial electronic skin resistant to ultra-large strain is provided, including the following steps:
(1) Depositing graphene films with different nuclear densities on a silicon wafer substrate by using a plasma chemical vapor deposition method to prepare a low-density nuclear graphene film and a high-density nuclear graphene film; and (3) directly depositing a graphene film with the thickness of 2nm on a silicon oxide substrate by using methane as a precursor at the temperature of 500-600 ℃ through a plasma chemical vapor deposition system, wherein the nucleation density is different when the deposition process is different, and the higher the temperature is, the larger the nucleation density is.
(2) Spin-coating PMMA on the low-density nucleation graphene film obtained in the step (1), transferring the low-density nucleation graphene film to a flexible substrate through wet etching, and then removing the PMMA layer; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) Spin-coating PMMA on the high-density nucleation graphene film obtained in the step (1), transferring the high-density nucleation graphene film to a flexible substrate through wet etching, and then removing the PMMA layer; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene channel.
In the preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin, in the step (1), the silicon wafer substrate layer is a silicon wafer substrate layer with a 300nm oxide layer covered on the surface.
In the preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin, as a preferred embodiment, in the step (1), the temperature of vapor deposition corresponding to low-density nucleation is 510-540 ℃; the temperature of the vapor deposition corresponding to the high density nucleation is 580-600 ℃.
In the preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin, as a preferred implementation manner, in the step (2) and the step (3), the concentration of spin-coated PMMA is 5%; the wet etching is as follows: soaking with 10% hydrofluoric acid for 10 min.
The beneficial effects of the invention are as follows: according to the high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain, disclosed by the invention, the graphene films with different nuclear densities are obtained by controlling different growth conditions, and the different tunneling effects of the different films are respectively used as a sensing channel and an electrode part, so that the full-graphene artificial electronic skin with high transparency and high sensitivity (the sensitivity factor is more than 500) and capable of resisting large strain (> 100%) is realized. In addition, through regulating and controlling different conditions of growing graphene, the flexible full-graphene device array with adjustable sensitivity and adaptation to different strain environments can be obtained, so that novel artificial electronic skin exceeding the human skin touch function is realized, and the novel artificial electronic skin can be used in the fields of future wearable equipment, touch screens and the like.
The high-sensitivity full-graphene artificial electronic skin capable of resisting the ultra-large strain can be prepared in a large area, so that the high-sensitivity full-graphene artificial electronic skin is possible to process the artificial electronic skin, a device array with stable mechanical properties can be produced in batches, the full-graphene artificial electronic skin is ensured not to break even under the condition of bearing the ultra-large strain, and the sensitivity factor of the artificial electronic skin based on graphene to external strain response is greatly improved.
The preparation flow of the high-sensitivity full-graphene artificial electronic skin capable of resisting the ultra-large strain is compatible with the existing semiconductor processing technology, namely the full-graphene artificial electronic skin has good application potential and wide application value.
Drawings
FIG. 1 is a block diagram of a high-sensitivity full-graphene artificial electronic skin capable of resisting ultra-large strain;
in the figure: 1. an electrode; 2. a channel; 3. a flexible substrate.
Detailed Description
In order that those skilled in the art will better understand the present application, a technical solution in the embodiments of the present application will be clearly and completely described in the following in connection with examples, and it is apparent that the described embodiments are only some embodiments of the present application, not all embodiments. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, shall fall within the scope of the present application.
Example 1
A high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain comprises a PET flexible substrate, an electrode pattern array made of low-density nucleation graphene and a channel made of high-density nucleation graphene and having sensitive mechanical response; the electrode pattern array and the channel are arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel;
the size of the graphene island obtained by deposition is 15-30 nm, and the size of the graphene island obtained by deposition is 5-10 nm.
The structure diagram of the all-graphene artificial electronic skin in embodiment 1 of the present invention is shown in fig. 1.
The preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin disclosed in the embodiment 1 comprises the following steps:
(1) Using methane as a precursor, and directly depositing a graphene film with the thickness of 2nm on a silicon wafer substrate with 300nm silicon dioxide covered on the surface by using a plasma chemical vapor deposition system at the temperature of 500-600 ℃, wherein the formed nucleation density is different when the deposition process temperature is different, the nucleation density is higher when the temperature is higher, and the vapor deposition temperature corresponding to the low-density nucleation in the embodiment is 520 ℃; the temperature of vapor deposition corresponding to the high-density nucleation is 590 ℃;
(2) Spin-coating PMMA with the concentration of 5% on the low-density nucleation graphene film obtained in the step (1), placing a spin-coated PMMA substrate in a hydrofluoric acid solution with the concentration of 10% for standing for 10 minutes, flushing the PMMA film with graphene for multiple times when the silicon dioxide layer is completely corroded and the PMMA film with graphene is suspended in the solution, then fishing out PMMA in the solution by utilizing a flexible substrate, and then removing the PMMA layer by utilizing acetone; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) Spin-coating PMMA with a concentration of 5% on the high-density nucleation graphene film obtained in the step (1), placing a spin-coated PMMA substrate in a hydrofluoric acid solution with a concentration of 10% for standing for 10 minutes, flushing the PMMA film with graphene with deionized water for multiple times when the silicon dioxide layer is completely corroded and the PMMA film with graphene is suspended in the solution, then fishing out the PMMA in the solution by utilizing a flexible substrate, and removing the PMMA layer by utilizing acetone; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene channel.
The transparency of the full graphene artificial electronic skin obtained in the embodiment 1 of the invention is more than 90%, and the sensitivity factor can reach more than 500, and the degree of resisting large strain is more than 100%.
Example 2
A high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain comprises a PI flexible substrate, an electrode pattern array made of low-density nucleation graphene and a channel made of high-density nucleation graphene and having sensitive mechanical response; the electrode pattern array and the channel are arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel;
the size of the graphene island obtained by deposition is 15-30 nm, and the size of the graphene island obtained by deposition is 5-10 nm.
The preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin in the embodiment 2 comprises the following steps:
(1) Using methane as a precursor, and directly depositing a graphene film with the thickness of 2nm on a silicon wafer substrate with 300nm silicon dioxide covered on the surface by using a plasma chemical vapor deposition system at the temperature of 500-600 ℃, wherein the formed nucleation density is different when the deposition process temperature is different, the nucleation density is higher when the temperature is higher, and the vapor deposition temperature corresponding to the low-density nucleation in the embodiment is 510 ℃; the temperature of vapor deposition corresponding to high density nucleation is 600 ℃;
(2) Spin-coating PMMA with a concentration of 5% on the low-density nucleation graphene film obtained in the step (1), placing a spin-coated PMMA substrate in a hydrofluoric acid solution with a concentration of 10% for standing for 10 minutes, flushing the PMMA film with graphene with deionized water for multiple times when the silicon dioxide layer is completely corroded and the PMMA film with graphene is suspended in the solution, then fishing out the PMMA in the solution by utilizing a flexible substrate, and removing the PMMA layer by utilizing acetone; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) Spin-coating PMMA with a concentration of 5% on the high-density nucleation graphene film obtained in the step (1), placing a spin-coated PMMA substrate in a hydrofluoric acid solution with a concentration of 10% for standing for 10 minutes, flushing the PMMA film with graphene with deionized water for multiple times when the silicon dioxide layer is completely corroded and the PMMA film with graphene is suspended in the solution, then fishing out the PMMA in the solution by utilizing a flexible substrate, and removing the PMMA layer by utilizing acetone; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene channel.
Example 3
A high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain comprises a PDMS flexible substrate, an electrode pattern array made of low-density nucleation graphene and a channel made of high-density nucleation graphene and having sensitive mechanical response; the electrode pattern array and the channel are arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel;
the low-density nucleation means that the size of the graphene island is 15-30 nm, and the high-density nucleation means that the size of the graphene island is 5-10 nm.
The preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin in the embodiment 3 comprises the following steps:
(1) Using methane as a precursor, and directly depositing a graphene film with the thickness of 2nm on a silicon wafer substrate with 300nm silicon oxide covered on the surface by using a plasma chemical vapor deposition system at the temperature of 500-600 ℃, wherein the formed nucleation densities are different when the deposition process temperature is different, the nucleation density is higher when the temperature is higher, and the vapor deposition temperature corresponding to the low-density nucleation in the embodiment is 530 ℃; the temperature of vapor deposition corresponding to high-density nucleation is 580 ℃;
(2) Spin-coating PMMA with the concentration of 5% on the low-density nucleation graphene film obtained in the step (1), placing a spin-coated PMMA substrate in a hydrofluoric acid solution with the concentration of 10% for standing for 10 minutes, flushing the PMMA film with graphene for multiple times when the silicon dioxide layer is completely corroded and the PMMA film with graphene is suspended in the solution, then fishing out PMMA in the solution by utilizing a flexible substrate, and then removing the PMMA layer by utilizing acetone; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) Spin-coating PMMA with a concentration of 5% on the high-density nucleation graphene film obtained in the step (1), placing a spin-coated PMMA substrate in a hydrofluoric acid solution with a concentration of 10% for standing for 10 minutes, flushing the PMMA film with graphene with deionized water for multiple times when the silicon dioxide layer is completely corroded and the PMMA film with graphene is suspended in the solution, then fishing out the PMMA in the solution by utilizing a flexible substrate, and removing the PMMA layer by utilizing acetone; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene channel.
The foregoing is merely a preferred embodiment of the present invention, and it should be noted that modifications and additions may be made to those skilled in the art without departing from the method of the present invention, which modifications and additions are also to be considered as within the scope of the present invention.

Claims (6)

1. A high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain is characterized in that,
the electrode pattern array is prepared from low-density nucleation graphene, and the channel is prepared from high-density nucleation graphene and has sensitive mechanical response;
the electrode pattern array and the channel are arranged on the surface of the flexible substrate, and the two corresponding electrodes are communicated through the channel;
the size of the graphene island obtained by deposition is 15-30 nm, and the size of the graphene island obtained by deposition is 5-10 nm;
the low-density nucleation graphene and the high-density nucleation graphene are obtained by regulating and controlling the growth temperature of the plasma enhanced chemical vapor deposition system respectively.
2. The ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin according to claim 1, wherein,
the flexible substrate is: PET flexible substrate, PI flexible substrate, PDMS flexible substrate.
3. A method for preparing a high-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain as claimed in any one of claims 1 to 2, which is characterized in that,
the method comprises the following steps:
(1) Depositing graphene films with different nuclear densities on a silicon wafer substrate layer by using a plasma chemical vapor deposition method to prepare a low-density nuclear graphene film and a high-density nuclear graphene film;
(2) Spin-coating PMMA on the low-density nucleation graphene film obtained in the step (1), transferring the low-density nucleation graphene film to a flexible substrate through wet etching, and then removing the PMMA layer; processing the low-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene electrode pattern array;
(3) Spin-coating PMMA on the high-density nucleation graphene film obtained in the step (1), transferring the high-density nucleation graphene film to a flexible substrate through wet etching, and then removing the PMMA layer; and processing the high-density nucleation graphene film by utilizing ultraviolet optical exposure and reactive ion etching technology to obtain a graphene channel.
4. The preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin according to claim 3, which is characterized in that,
in the step (1), the silicon wafer substrate layer is a silicon wafer substrate layer with a 300nm oxide layer covered on the surface.
5. The preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin according to claim 3, which is characterized in that,
in the step (1), the temperature of the vapor deposition corresponding to the low-density nucleation is 510-540 ℃; the temperature of the vapor deposition corresponding to the high density nucleation is 580-600 ℃.
6. The preparation method of the ultra-large strain resistant high-sensitivity full-graphene artificial electronic skin according to claim 3, which is characterized in that,
in the step (2) and the step (3), the concentration of the spin-coated PMMA is 5%; the wet etching is as follows: soaking with 10% hydrofluoric acid for 10 min.
CN202111226499.4A 2021-10-21 2021-10-21 High-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain Active CN113998666B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111226499.4A CN113998666B (en) 2021-10-21 2021-10-21 High-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111226499.4A CN113998666B (en) 2021-10-21 2021-10-21 High-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain

Publications (2)

Publication Number Publication Date
CN113998666A CN113998666A (en) 2022-02-01
CN113998666B true CN113998666B (en) 2023-06-23

Family

ID=79923388

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111226499.4A Active CN113998666B (en) 2021-10-21 2021-10-21 High-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain

Country Status (1)

Country Link
CN (1) CN113998666B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2020103599A4 (en) * 2020-11-23 2021-02-04 Xidian University Preparation Method of CVD Graphene Planar Micro Super Capacitor
CN112701173A (en) * 2020-12-24 2021-04-23 上海交通大学 Graphene high-sensitivity photoelectric detector and preparation method thereof

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012033869A1 (en) * 2010-09-08 2012-03-15 President And Fellows Of Harvard College Controlled synthesis of monolithically-integrated graphene structures
JP5462219B2 (en) * 2011-05-25 2014-04-02 株式会社日立製作所 Graphene sensor, substance species analyzer using the sensor, and substance species detection method using the sensor
US10072355B2 (en) * 2014-04-15 2018-09-11 Board Of Regents, The University Of Texas System Methods of forming graphene single crystal domains on a low nucleation site density substrate
CN104949609A (en) * 2015-05-20 2015-09-30 清华大学 Flexible graphene sensor and manufacture method thereof
ES2597477A1 (en) * 2015-06-18 2017-01-18 Consejo Superior De Investigaciones Científicas (Csic) Deposition of graphene layers through chemical deposition in steam phase assisted by plasma (Machine-translation by Google Translate, not legally binding)
CN109390403B (en) * 2017-08-10 2022-08-26 北京纳米能源与系统研究所 Graphene transistor, preparation method and use method thereof and self-driven electronic skin
CN109341902B (en) * 2018-11-26 2020-12-25 国宏中晶集团有限公司 Flexible pressure sensor with graphene as electrode material and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2020103599A4 (en) * 2020-11-23 2021-02-04 Xidian University Preparation Method of CVD Graphene Planar Micro Super Capacitor
CN112701173A (en) * 2020-12-24 2021-04-23 上海交通大学 Graphene high-sensitivity photoelectric detector and preparation method thereof

Also Published As

Publication number Publication date
CN113998666A (en) 2022-02-01

Similar Documents

Publication Publication Date Title
Li et al. Engineering of carbon nanotube/polydimethylsiloxane nanocomposites with enhanced sensitivity for wearable motion sensors
Li et al. Highly sensitive, reliable and flexible piezoresistive pressure sensors featuring polyurethane sponge coated with MXene sheets
Song et al. Hollow-structured MXene-PDMS composites as flexible, wearable and highly bendable sensors with wide working range
Sun et al. Highly stretchable and ultrathin nanopaper composites for epidermal strain sensors
Ye et al. A wearable and highly sensitive strain sensor based on a polyethylenimine–rGO layered nanocomposite thin film
Li et al. Design of a wearable and shape-memory fibriform sensor for the detection of multimodal deformation
Zhang et al. Multi-modal strain and temperature sensor by hybridizing reduced graphene oxide and PEDOT: PSS
CN110108375B (en) MXene material-based electronic skin and preparation method thereof
Lee et al. Microfabrication and characterization of spray-coated single-wall carbon nanotube film strain gauges
CN106840476A (en) The three-dimensional quick sensing element of carbon nanomaterial field-effect flexible force and preparation method
Kang et al. A flexible resistive temperature detector (RTD) based on in-situ growth of patterned Ag film on polyimide without lithography
CN109567984B (en) Electronic skin and preparation method and application thereof
Sun et al. Design and fabrication of flexible strain sensor based on ZnO-decorated PVDF via atomic layer deposition
CN107934908B (en) Stress sensor and preparation method thereof
Ge et al. Flexible pressure sensor based on a thermally induced wrinkled graphene sandwich structure
CN111766001A (en) Micro-wrinkle gold thin film flexible crack sensor with controllable scale
Ma et al. Two-dimensional van der Waals thin film transistors as active matrix for spatially resolved pressure sensing
Min et al. Properties of stretchable and flexible strain sensor based on silver/PDMS nanocomposites
Du et al. Study on the performance of temperature‐stabilised flexible strain sensors based on silver nanowires
Li et al. Fe NWs/CNT/PUS composite constructed rigid-flexible coupling 3D porous structure with highly linear response and large strain for strain sensor
Liu et al. Preparation and property research of strain sensor based on PDMS and silver nanomaterials
Abd Hamid et al. Resistive strain sensors based on carbon black and multi-wall carbon nanotube composites
Liu et al. Superstretchable and Linear-Response Strain Sensors With Carbon Nanotubes Ultrasonically Assembled on Silicone Rubber Film
CN113998666B (en) High-sensitivity full-graphene artificial electronic skin capable of resisting super-large strain
Zhuang et al. Fabrication of lead-free perovskite MASnBrI2 nanocrystals-embedded polymer composites for flexible strain sensors

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant