CN113964243A - Equipment and method for slotting after mask printing in single-side electroplating process - Google Patents
Equipment and method for slotting after mask printing in single-side electroplating process Download PDFInfo
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- CN113964243A CN113964243A CN202111443866.6A CN202111443866A CN113964243A CN 113964243 A CN113964243 A CN 113964243A CN 202111443866 A CN202111443866 A CN 202111443866A CN 113964243 A CN113964243 A CN 113964243A
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 238000009713 electroplating Methods 0.000 title claims abstract description 25
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 122
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 99
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 99
- 239000010703 silicon Substances 0.000 claims abstract description 99
- 235000012431 wafers Nutrition 0.000 claims abstract description 92
- 239000002253 acid Substances 0.000 claims abstract description 73
- 238000001035 drying Methods 0.000 claims abstract description 51
- 238000004140 cleaning Methods 0.000 claims abstract description 48
- 238000005406 washing Methods 0.000 claims abstract description 38
- 238000002161 passivation Methods 0.000 claims abstract description 25
- 239000000463 material Substances 0.000 claims abstract description 22
- 239000003513 alkali Substances 0.000 claims abstract description 18
- 238000005260 corrosion Methods 0.000 claims abstract description 10
- 230000007797 corrosion Effects 0.000 claims abstract description 10
- 239000003595 mist Substances 0.000 claims abstract description 8
- 239000003153 chemical reaction reagent Substances 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000002347 injection Methods 0.000 description 4
- 239000007924 injection Substances 0.000 description 4
- 239000002210 silicon-based material Substances 0.000 description 4
- 238000005286 illumination Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000012466 permeate Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000012670 alkaline solution Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012459 cleaning agent Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000004065 wastewater treatment Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
- H01L31/1868—Passivation
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
- C25D5/022—Electroplating of selected surface areas using masking means
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
- C25D7/12—Semiconductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides equipment and a method for slotting after printing a mask in a single-sided electroplating process, which comprises the following steps: the device comprises a water vapor cavity, a first drying cavity, an acid gas cavity, a first pure water cleaning tank, an alkali washing tank, a second pure water cleaning tank and a second drying cavity which are sequentially arranged and used for processing a silicon wafer; conveying rollers are arranged in the water vapor cavity, the first drying cavity, the acid gas cavity, the first pure water cleaning tank, the alkaline cleaning tank, the second pure water cleaning tank and the second drying cavity, and are used for placing and conveying silicon wafers. The method has the advantages that the passivation film in the area not covered by the mask is removed through the gas-phase acid mist, so that the requirement of the mask material on acid resistance is greatly reduced; the HF gas can be dissolved in the water-wetted part of the silicon wafer to form HF, the HF can corrode the passivation film, the corrosion speed can be controlled by controlling the dissolving amount of the HF, the amount of the released acid can be relatively accurately controlled, and the consumption of the acid is reduced.
Description
Technical Field
The invention belongs to the field of solar cell electroplating, and particularly relates to equipment and a method for slotting after a mask is printed in a single-side electroplating process.
Background
The mask in the existing electroplating process is generally used for printing a layer of photosensitive or thermosensitive material which is acid-resistant but not alkali-resistant, the pattern of the material is the same as the pattern of a grid line to be electroplated, the material is cured under a certain temperature or illumination condition, then the silicon wafer is put into a specific acid solution, the passivation film in the area which is not covered by the mask material is removed, the area covered by the mask is not affected, then the mask material is removed through alkali liquor or other specific cleaning solutions, the silicon material is exposed at the position of the grid line pattern, electroplating can be carried out, and other areas are covered by films such as the passivation film and the like, so that the aim of electroplating cannot be carried out is fulfilled. The difficulties in the prior art are as follows: the mask material is easy to fall off when being soaked in an acid solution, so that the film covered by the mask is also corroded by the acid solution, and the mask effect cannot be achieved.
Disclosure of Invention
The invention aims to provide equipment and a method for slotting after printing a mask in a single-side electroplating process, which are particularly suitable for removing passivation films such as silicon nitride and the like in an area which is not covered by a mask material after the mask is printed.
In order to solve the technical problems, the invention adopts the technical scheme that: an apparatus for grooving after printing a mask in a single-sided electroplating process, comprising: the device comprises a water vapor cavity, a first drying cavity, an acid gas cavity, a first pure water cleaning tank, an alkali washing tank, a second pure water cleaning tank and a second drying cavity which are sequentially arranged and used for processing a silicon wafer;
conveying rollers are arranged in the water vapor cavity, the first drying cavity, the acid gas cavity, the first pure water cleaning tank, the alkaline cleaning tank, the second pure water cleaning tank and the second drying cavity, and are used for placing and conveying silicon wafers.
Furthermore, a plurality of groups of water vapor generators and jet orifices are arranged in the water vapor cavity, the jet orifices are arranged to jet water vapor to the surface of the silicon wafer, and the amount of the water vapor jetted by the jet orifices can be adjusted.
Furthermore, the junction of the water vapor cavity and the first drying cavity is provided with at least one water absorbing roller matched with the conveying roller.
Furthermore, at least one water absorbing roller matched with the conveying roller is arranged at the joint of the first drying cavity and the water vapor cavity and used for removing redundant water on the mask on the surface of the silicon wafer.
Furthermore, an air curtain is further arranged at the joint of the first drying cavity and the water vapor cavity and used for keeping the back of the silicon wafer dry.
Further, the acid gas cavity comprises an upper cavity and a lower cavity which are longitudinally arranged, and the lower cavity is wider than the upper cavity.
Further, at least one group of fans are arranged in the lower cavity and are arranged to enable the acid gas to circulate from top to bottom.
Furthermore, at least two alkaline washing grooves are arranged, and alkaline liquor or special chemical reagents for removing masks can be contained in the alkaline washing grooves.
Further, the first pure water cleaning tank is configured to remove excess acid solution; the second pure water cleaning tank is configured to remove excess lye or a dedicated chemical reagent.
A method for slotting after printing a mask in a single-side electroplating process comprises the following steps:
feeding: arranging the silicon wafers on the conveying roller in sequence, and starting the conveying roller;
and (3) water vapor spraying: the silicon wafer enters the water vapor cavity under the driving of the conveying roller, a layer of water beads can be deposited on the surface of the silicon wafer after entering the water vapor cavity, and due to the difference of hydrophilicity, the deposition of a passivation film area is more than that of a mask;
drying: the silicon wafer is driven by the conveying roller to enter the first drying cavity, after the silicon wafer enters the first drying cavity, a small amount of water on the mask is removed by a water absorbing roller in the first drying cavity and dried, the water on the back surface of the silicon wafer is dried, and the water in the passivation film area is reserved;
acid mist corrosion: the silicon wafer is driven by the conveying roller to enter the acid gas cavity, after the silicon wafer enters the acid gas cavity, the acid gas in the acid gas cavity is circulated from top to bottom under the drive of a fan in the acid gas cavity, the acid gas is dissolved in the residual water on the passivation film area to form an acid corrosion passivation film, and the back surface of the silicon wafer and the mask are not corroded;
cleaning with pure water: the silicon wafer is driven by the conveying roller to enter the first pure water cleaning tank, and redundant acid liquor on the surface of the silicon wafer is removed;
alkali washing: the silicon wafer enters the alkaline washing groove under the driving of the conveying roller, the mask is removed through alkali liquor or a special chemical reagent, and the mask material on the surface of the silicon wafer is flushed into a collecting box in the alkaline washing groove;
cleaning with pure water: the silicon wafer enters the second pure water cleaning tank under the driving of the conveying roller, and redundant alkali liquor on the surface of the silicon wafer is removed;
drying and blanking: the silicon wafer enters the second drying cavity under the driving of the conveying roller, and the silicon wafer is dried and then discharged.
Due to the adoption of the technical scheme, the method has the following beneficial effects:
the passivation film of the area which is not covered by the mask is removed through gas-phase acid mist, and the passivation film of the area which is not covered by the mask is selectively etched by utilizing the hydrophilicity difference of the mask and the passivation film and the characteristic that HF gas is easily dissolved in water, so that the requirement of the mask material on acid resistance is greatly reduced, and the implementation of a subsequent electroplating mask process is facilitated; HF gas can be dissolved in the part of the silicon wafer which is stained with water to form HF, the HF corrodes the passivation film to achieve the purpose of slotting, the corrosion speed can be controlled by controlling the dissolving amount of the HF, the amount of released acid can be relatively accurately controlled, and the consumption of the acid is reduced; the lower surface of the silicon wafer and the mask are not provided with water, and HF can not be formed, so that the silicon wafer and the mask are not corroded, the problems that the mask is easy to fall off and permeate when being cleaned in acid liquor are solved, the requirement of the mask material on acid resistance is greatly reduced, and the follow-up electroplating mask process is facilitated.
The mask is removed by the alkaline chemical reagent, so that the silicon material is exposed at the grid pattern position, the subsequent electroplating operation is convenient, and the popularization of the electroplating mask process is facilitated.
Drawings
Fig. 1 is a schematic view of the overall structure of an embodiment of the present invention.
In the figure:
10. a water vapor cavity 20, a first drying cavity 30 and an acid gas cavity
40. First pure water cleaning tank 50, alkaline cleaning tank 60, and second pure water cleaning
70. Second drying cavity 80 and conveying roller groove
90. Water absorption roller 21 and air curtain
Detailed Description
The invention is further illustrated by the following examples and figures:
in the existing electroplating process, a layer of photosensitive or thermosensitive material, namely a mask, which is acid-resistant but not alkali-resistant is generally printed on a silicon wafer, wherein the area of the material is the same as that of a grid line area needing to be electroplated, and the material is solidified under a certain temperature or illumination condition; then, putting the silicon wafer into a specific acid solution, and removing the passivation film in the area not covered by the mask material, while the area covered by the mask is not affected; then removing the material of the mask layer by alkali liquor or other specific cleaning liquid to achieve the purpose that the silicon material is exposed at the grid pattern position and can be electroplated, and other areas are covered by the passivation film and can not be electroplated.
However, the mask material is easy to fall off when being soaked in an acid solution, so that the film covered by the mask is also corroded by the acid solution, and the mask effect cannot be achieved. In order to solve the problem that the mask is easy to fall off and permeate when being cleaned in acid solution, in an embodiment of the present invention, as shown in fig. 1, an apparatus for grooving after printing the mask in a single-sided electroplating process includes a plurality of chambers partitioned into: the water vapor chamber 10, the first drying chamber 20, the acid gas chamber 30, the first pure water cleaning tank 40, the alkaline cleaning tank 50, the second pure water cleaning tank 60 and the second drying chamber 70 are arranged in sequence, conveying rollers 80 are arranged in the water vapor chamber 10, the first drying chamber 20, the acid gas chamber 30, the first pure water cleaning tank 40, the alkaline cleaning tank 50, the second pure water cleaning tank 60 and the second drying chamber 70, a plurality of silicon wafers are placed on the conveying rollers 8080 side by side, and are conveyed by the conveying rollers 80 to complete reaction sequentially through the chambers, so that the silicon wafers are treated sequentially; the passivation film in the area not covered by the mask is removed through the gas-phase acid mist, so that the requirement of the mask material on acid resistance is greatly reduced, and the implementation of a subsequent electroplating mask process is facilitated.
As shown in fig. 1, a plurality of sets of water vapor generators and injection ports are provided in the water vapor chamber 10, a large amount of water vapor generated by the water vapor generators is injected through the injection ports, the water vapor is injected to the surface of the silicon wafer, including the upper surface and the lower surface of the silicon wafer, through the injection ports, and the amount of the water vapor is adjusted by adjusting the opening degree of the injection ports or increasing the pressure, etc., so that the water vapor is deposited on the surface of the silicon wafer. Meanwhile, at least one water absorbing roller 90 matched with the conveying roller 80 is arranged at the joint of the water vapor cavity 10 and the first drying cavity 20; in this embodiment, two water suction rollers 90 are provided in the steam chamber 10 adjacent to the first drying chamber 20, and one water suction roller 90 has been omitted in the drawing for removing excess moisture from the upper surface of the silicon wafer.
Specifically, the silicon wafer entering the water vapor cavity 10 is treated in advance, and a layer of passive film is plated on the surface of the silicon wafer; then printing an acid-resistant but not alkali-resistant mask on the surface of the silicon wafer, wherein the pattern of the mask is the same as that of a grid line pattern to be electroplated, and curing the mask under a certain temperature or illumination condition, wherein the mask is not hydrophilic, and the passivation film is hydrophilic, and performing the subsequent acid mist corrosion process by utilizing the characteristic.
As shown in fig. 1, at least one water absorbing roller 90 matched with the conveying roller 80 is arranged at the joint of the first drying chamber 20 and the steam chamber 10, the silicon wafer is conveyed by the conveying roller 80, and excess water on the upper surface of the silicon wafer is removed by the water absorbing roller 90; in the present embodiment, two water suction rollers 90 are provided in the first drying chamber 20 adjacent to the water vapor chamber 10. Meanwhile, an air curtain 21 is further arranged at the joint of the first drying cavity 20 and the water vapor cavity 10, the air curtain 21 is arranged between the conveying rollers 80, the back of the silicon wafer is swept through the air curtain 21, the back of the silicon wafer is kept dry, the conveying rollers 80 behind the silicon wafer are prevented from being wetted, and then the air curtain contacts acid mist to form liquid acid to corrode the lower surface of the silicon wafer. A small amount of water on the drying back and the mask is achieved by the arrangement of the first drying chamber 20, while water at the position of the passivation film remains.
As shown in fig. 1, the acid gas chamber 30 includes an upper chamber and a lower chamber which are arranged longitudinally, in this embodiment, the acid gas is HF gas, the upper chamber of the acid gas chamber 30 is narrow, the lower chamber is wide, and the lower chamber is wider than the upper chamber; at least one group of fans are arranged in the lower cavity, and HF gas is pumped to the upper cavity through the fans, so that top-to-bottom gas flow is formed, and the HF gas circulates from top to bottom. After the silicon chip enters the acid gas cavity 30, HF gas is dissolved in the part of the silicon chip which is stained with water to form HF, the HF corrodes the passivation film to achieve the purpose of slotting, the corrosion speed can be controlled by controlling the dissolving amount of the HF, and the concentration of the HF can be adjusted according to the reaction rate; the lower surface of the silicon wafer and the mask are not provided with water, and HF can not be formed, so that the silicon wafer and the mask are not corroded, the problems that the mask is easy to fall off and permeate when being cleaned in acid liquor are solved, the requirement of the mask material on acid resistance is greatly reduced, and the follow-up electroplating mask process is facilitated.
As shown in fig. 1, the first pure water cleaning tank 40 is disposed behind the acid gas chamber 30, and the silicon wafer is cleaned by pure water in the first pure water cleaning tank 40 to remove the excessive HF acid solution on the surface of the silicon wafer.
As shown in fig. 1, at least two alkaline washing tanks 50 are provided, and the mask is removed by the alkaline washing tanks 50; in the embodiment, two alkaline washing grooves are arranged, namely a first alkaline washing groove 51 and a second alkaline washing groove 52, wherein the first alkaline washing groove 51 and the second alkaline washing groove 52 are sequentially arranged, the alkaline washing groove 50 in the embodiment is soaking type washing, chemicals capable of removing masks are arranged in the alkaline washing groove 50, the concentration is generally 10% -40%, and the reaction temperature is 30-50 ℃; as an alternative scheme, the alkali liquor can also be a special cleaning agent for the mask components, and the mask can be removed. In the embodiment, the first alkaline washing tank 51 reacts violently, a lot of masks fall off in the washing process, and a lot of products are generated, so that a discharge hole at the joint of the first alkaline washing tank 51 and the second alkaline washing tank 22 is provided with a water feeding cutter for washing the products generated in the washing process, and the mask materials on the surface of the silicon wafer are washed into the collection box so as not to be brought into the second alkaline washing tank 52; the second alkali washing tank 52 has stable reaction and few products, and performs secondary washing on the silicon wafer.
As shown in FIG. 1, the second pure water cleaning tank 60 is disposed behind the alkaline cleaning tank 50, and the silicon wafer is cleaned by pure water in the second pure water cleaning tank 60 for cleaning the residual alkaline solution.
As shown in fig. 1, the second drying chamber 70 contains several sets of fans and air knives, which can be, but are not limited to, hot air knives, and the silicon wafer processed by the alkaline washing tank 50 is dried by the arrangement of the hot air knives.
In addition, the first drying cavity 20 and the second drying cavity 70 of the device are both provided with an exhaust system, the exhaust system is connected with the acid exhaust and waste liquid discharge system and the waste water treatment station, and further description is omitted because the prior art is more perfect.
A method for slotting after printing a mask in a single-side electroplating process comprises the following steps:
feeding: arranging the silicon wafers on the conveying roller 80 in sequence, and starting the conveying roller 80;
and (3) water vapor spraying: the silicon chip enters the water vapor cavity 10 under the driving of the conveying roller 80, a layer of water drops are deposited on the surface of the silicon chip after entering the water vapor cavity 10, the water drops comprise the upper surface and the lower surface of the silicon chip, and the deposition of the passivation film area is more than that of the mask;
drying: the silicon wafer is driven by the conveying roller 80 to enter the first drying cavity 20, after the silicon wafer enters the first drying cavity 20, a small amount of water on the back surface of the silicon wafer and the mask can be removed, and water in the passivation film area is reserved;
acid mist corrosion: the silicon wafer enters the acid gas cavity 30 under the drive of the conveying roller 80, after the silicon wafer enters the acid gas cavity 30, HF gas in the acid gas cavity 30 circulates from top to bottom under the drive of a fan in the acid gas cavity 30, after the silicon wafer enters the acid gas cavity 30, the HF gas dissolves in the part of the silicon wafer soaked by water to form HF, the HF corrodes the silicon nitride, the purpose of slotting is achieved, and the corrosion speed can be controlled by controlling the dissolving amount of the HF; the lower surface of the silicon chip and the mask have no water, so that HF can not be formed and the silicon chip is not corroded;
cleaning with pure water: the silicon wafer is driven by a conveying roller 80 to enter the first pure water cleaning tank 40, and redundant HF on the surface of the silicon wafer is removed;
alkali washing: the silicon wafer enters the alkaline washing groove 50 under the driving of the conveying roller 80, sequentially passes through the first alkaline washing groove 51 and the second alkaline washing groove 52, the mask is removed through an alkaline chemical reagent, the silicon material is exposed at the grid pattern position, the subsequent electroplating operation is convenient, and the mask material on the surface of the silicon wafer is flushed into a collecting box in the alkaline washing groove 50;
cleaning with pure water: the silicon wafer is driven by the conveying roller 80 to enter the second pure water cleaning tank 60, and redundant alkali liquor on the surface of the silicon wafer is removed;
drying and blanking: the silicon wafer is driven by the conveying roller 80 to enter the second drying chamber 70, and the silicon wafer is dried and then fed.
The embodiments of the present invention have been described in detail, but the description is only for the preferred embodiments of the present invention and should not be construed as limiting the scope of the present invention. All equivalent changes and modifications made within the scope of the present invention shall fall within the scope of the present invention.
Claims (10)
1. An apparatus for grooving after printing a mask in a single-sided electroplating process, comprising: the device comprises a water vapor cavity, a first drying cavity, an acid gas cavity, a first pure water cleaning tank, an alkali washing tank, a second pure water cleaning tank and a second drying cavity which are sequentially arranged and used for processing a silicon wafer;
conveying rollers are arranged in the water vapor cavity, the first drying cavity, the acid gas cavity, the first pure water cleaning tank, the alkaline cleaning tank, the second pure water cleaning tank and the second drying cavity, and are used for placing and conveying silicon wafers.
2. The apparatus of claim 1, wherein the apparatus comprises: and a plurality of groups of water vapor generators and jet orifices are arranged in the water vapor cavity, the jet orifices are used for jetting water vapor to the surface of the silicon wafer, and the amount of the water vapor jetted by the jet orifices can be adjusted.
3. An apparatus for grooving after printing a mask in a single-sided electroplating process as claimed in claim 1 or 2, wherein: and at least one water absorbing roller matched with the conveying roller is arranged at the joint of the water vapor cavity and the first drying cavity.
4. The apparatus of claim 3, wherein the apparatus comprises: and at least one water absorbing roller matched with the conveying roller is arranged at the joint of the first drying cavity and the water vapor cavity and used for removing redundant moisture on the mask on the surface of the silicon wafer.
5. The apparatus of claim 4, wherein the apparatus comprises: and an air curtain is further arranged at the joint of the first drying cavity and the water vapor cavity and used for keeping the back of the silicon wafer dry.
6. The apparatus of claim 1, wherein the apparatus comprises: the acid gas cavity comprises an upper cavity and a lower cavity which are longitudinally arranged, and the lower cavity is wider than the upper cavity.
7. The apparatus of claim 6, wherein the apparatus comprises: at least one group of fans are arranged in the lower cavity and are arranged to enable the acid gas to circulate from top to bottom.
8. The apparatus of claim 1, wherein the apparatus comprises: at least two alkaline washing grooves are arranged, and alkaline liquor or special chemical reagents for removing masks can be contained in the alkaline washing grooves.
9. The apparatus of claim 1, wherein the apparatus comprises: the first pure water cleaning tank is arranged to remove redundant acid liquor; the second pure water cleaning tank is configured to remove excess lye or a dedicated chemical reagent.
10. A method for slotting after printing a mask in a single-side electroplating process is characterized by being applicable to the equipment for slotting after printing the mask in the single-side electroplating process, which is disclosed by claim 1, and comprises the following steps:
feeding: arranging the silicon wafers on the conveying roller in sequence, and starting the conveying roller;
and (3) water vapor spraying: the silicon wafer enters the water vapor cavity under the driving of the conveying roller, a layer of water beads can be deposited on the surface of the silicon wafer after entering the water vapor cavity, and due to the difference of hydrophilicity, the deposition of a passivation film area is more than that of a mask;
drying: the silicon wafer is driven by the conveying roller to enter the first drying cavity, after the silicon wafer enters the first drying cavity, a small amount of water on the mask is removed by a water absorbing roller in the first drying cavity and dried, the water on the back surface of the silicon wafer is dried, and the water in the passivation film area is reserved;
acid mist corrosion: the silicon wafer is driven by the conveying roller to enter the acid gas cavity, after the silicon wafer enters the acid gas cavity, the acid gas in the acid gas cavity is circulated from top to bottom under the drive of a fan in the acid gas cavity, the acid gas is dissolved in the residual water on the passivation film area to form an acid corrosion passivation film, and the back surface of the silicon wafer and the mask are not corroded;
cleaning with pure water: the silicon wafer is driven by the conveying roller to enter the first pure water cleaning tank, and redundant acid liquor on the surface of the silicon wafer is removed;
alkali washing: the silicon wafer enters the alkaline washing groove under the driving of the conveying roller, the mask is removed through alkali liquor or a special chemical reagent, and the mask material on the surface of the silicon wafer is flushed into a collecting box in the alkaline washing groove;
cleaning with pure water: the silicon wafer enters the second pure water cleaning tank under the driving of the conveying roller, and redundant alkali liquor on the surface of the silicon wafer is removed;
drying and blanking: the silicon wafer enters the second drying cavity under the driving of the conveying roller, and the silicon wafer is dried and then discharged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111443866.6A CN113964243A (en) | 2021-11-30 | 2021-11-30 | Equipment and method for slotting after mask printing in single-side electroplating process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111443866.6A CN113964243A (en) | 2021-11-30 | 2021-11-30 | Equipment and method for slotting after mask printing in single-side electroplating process |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113964243A true CN113964243A (en) | 2022-01-21 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111443866.6A Pending CN113964243A (en) | 2021-11-30 | 2021-11-30 | Equipment and method for slotting after mask printing in single-side electroplating process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116053187A (en) * | 2022-09-23 | 2023-05-02 | 南通通州东大机械有限公司 | Full-automatic nickel plating device for semiconductor processing |
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2021
- 2021-11-30 CN CN202111443866.6A patent/CN113964243A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116053187A (en) * | 2022-09-23 | 2023-05-02 | 南通通州东大机械有限公司 | Full-automatic nickel plating device for semiconductor processing |
| CN116053187B (en) * | 2022-09-23 | 2024-01-30 | 南通通州东大机械有限公司 | Full-automatic nickel plating device for semiconductor processing |
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