CN113948432A - MICRO LED chip transfer method - Google Patents

MICRO LED chip transfer method Download PDF

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Publication number
CN113948432A
CN113948432A CN202111095379.5A CN202111095379A CN113948432A CN 113948432 A CN113948432 A CN 113948432A CN 202111095379 A CN202111095379 A CN 202111095379A CN 113948432 A CN113948432 A CN 113948432A
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Prior art keywords
melt adhesive
hot
led chip
adhesive layer
micro led
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Inventor
谭孟苹
禤劼
赵龙
黎楚沂
李皓
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Foshan NationStar Optoelectronics Co Ltd
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Foshan NationStar Optoelectronics Co Ltd
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Priority to CN202111095379.5A priority Critical patent/CN113948432A/en
Publication of CN113948432A publication Critical patent/CN113948432A/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67763—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading
    • H01L21/67778—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations the wafers being stored in a carrier, involving loading and unloading involving loading and unloading of wafers
    • H01L21/67781—Batch transfer of wafers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)

Abstract

The invention provides a MICRO LED chip transfer method, which comprises the following steps: spin-coating a first hot-melt adhesive material on the first glass substrate, and solidifying the first hot-melt adhesive material to form a first hot-melt adhesive layer; hot-pressing the wafer into the first hot-melt adhesive layer; stripping the substrate on the wafer to separate the substrate from the MICRO LED chip; spin-coating a second hot-melt adhesive material on the second glass substrate and curing to form a second hot-melt adhesive layer; hot pressing the second glass substrate on the first glass substrate to enable the second hot melt adhesive layer to be attached to the first hot melt adhesive layer; peeling the first glass substrate from the first hot melt adhesive layer, and removing the first hot melt adhesive layer by using first cleaning liquid; driving the MICRO LED chip to be transferred to a target object through the second glass substrate; bonding a MICRO LED chip to a target object; and peeling the second glass substrate from the second hot melt adhesive layer, and removing the second hot melt adhesive layer by using a second cleaning solution. The MICRO LED chip transfer method utilizes the polymorphic characteristic of the hot melt adhesive along with the temperature change to better fix and release the chip.

Description

MICRO LED chip transfer method
Technical Field
The invention relates to the field of chips, in particular to a MICRO LED chip transfer method.
Background
The MICRO LED chip wafer has problems of difficulty in increasing yield in LLO (Laser Lift-Off) and transfer bonding processes. The traditional LLO generally adopts a uv (uttraviolet) film and PDMS (Polydimethylsiloxane), although the process can improve the yield of the LLO of the whole wafer, the subsequent trial grabbing and transferring process has the problems of low chip yield, high power failure probability and the like due to the film matching problem, and the subsequent transfer bonding process cannot be well carried out; in the PDMS-LLO process, if the wafer is bonded poorly, the problems of low substrate peeling yield and easy chip flying are easily caused, and therefore, a suitable transfer process is required for transferring the MICRO LED chip.
Disclosure of Invention
In order to overcome the problem of difficulty in transferring the existing MICRO LED chip, the invention provides a MICRO LED chip transferring method, which utilizes hot melt adhesive as a transferring carrier and the polymorphic characteristic of the hot melt adhesive along with the temperature change, can better fix and release the chip in the transferring process and has good processing convenience.
Accordingly, the present invention provides a MICRO LED chip transfer method, comprising:
spin-coating a first hot-melt adhesive material on a first glass substrate, wherein the first hot-melt adhesive material is solidified to form a first hot-melt adhesive layer;
hot-pressing a wafer into the first hot-melt adhesive layer, wherein the MICRO LED chip on the wafer is wholly sunk into the first hot-melt adhesive layer;
after the first hot melt adhesive layer is solidified, the MICRO LED chip is embedded and fixed in the first hot melt adhesive layer;
peeling off the substrate on the wafer to separate the substrate from the MICRO LED chip, wherein the first surface of the MICRO LED chip is exposed out of the first hot melt adhesive layer;
spin-coating a second hot-melt adhesive material on the second glass substrate, wherein the second hot-melt adhesive material is solidified to form a second hot-melt adhesive layer;
hot-pressing the second glass substrate on the first glass substrate to enable the second hot-melt adhesive layer to be attached to the first hot-melt adhesive layer, wherein the first surface of the MICRO LED chip is attached to the second hot-melt adhesive layer;
peeling the first glass substrate from the first hot melt adhesive layer, and removing the first hot melt adhesive layer by using a first cleaning solution;
driving the MICRO LED chip to be transferred to a target object through the second glass substrate;
bonding the MICRO LED chip to the target object;
and peeling the second glass substrate from the second hot melt adhesive layer, removing the second hot melt adhesive layer by using a second cleaning solution, and transferring the MICRO LED chip from the substrate to the target object.
In an optional embodiment, the first hot-melt adhesive material is a polar material, and the first cleaning solution is a polar material cleaning solution; the second hot-melt adhesive material is a non-polar material, and the second cleaning solution is a non-polar material cleaning solution;
or the first hot-melt adhesive material is a non-polar material, and the first cleaning solution is a non-polar material cleaning solution; the second hot-melt adhesive material is a polar material, and the second cleaning solution is a polar material cleaning solution.
In an alternative embodiment, the curing temperature of the first hot melt adhesive material is higher than the curing temperature of the second hot melt adhesive material.
In an optional embodiment, before spin-coating a second hot-melt adhesive material on a second glass substrate, spin-coating a second transition material on the second glass substrate, where the second transition material forms a second transition layer, the second hot-melt adhesive material is spin-coated on the second transition layer, and the second transition material is a photosensitive material;
peeling the second glass substrate from the second hot melt adhesive layer comprises:
and irradiating the second transition layer through a second light source matched with the second transition material to remove the second transition material, wherein the second glass substrate is separated from the second hot melt adhesive layer.
In an alternative embodiment, the second transition material is a PI system material or a UV system material.
In an optional embodiment, before the second hot melt adhesive material is spin-coated on the second transition layer, a second pattern with a preset depth is etched on the surface of the second transition layer based on a photolithography process.
In an optional embodiment, before spin-coating a first hot-melt adhesive material on a first glass substrate, spin-coating a first transition material on the first glass substrate, where the first transition material forms a first transition layer, the first hot-melt adhesive material is spin-coated on the first transition layer, and the first transition material is a photosensitive material;
peeling the first glass substrate from the first hot melt adhesive layer comprises:
and irradiating the first transition layer through a first light source matched with the first transition material to remove the second transition material, wherein the first glass substrate is separated from the first hot melt adhesive layer.
In an optional embodiment, before the first hot melt adhesive material is spin-coated on the first transition layer, a first pattern with a preset depth is etched on the surface of the first transition layer based on a photolithography process.
In an optional embodiment, the hot-pressing the wafer into the first hot melt adhesive layer comprises:
and hot-pressing the wafer into the first hot melt adhesive layer through vacuum laminating equipment.
In an optional embodiment, hot-pressing the second glass substrate onto the first glass substrate to bond the second hot-melt adhesive layer to the first hot-melt adhesive layer includes:
and hot-pressing the second glass substrate on the first glass substrate through vacuum laminating equipment to laminate the second hot-melt adhesive layer with the first hot-melt adhesive layer.
In summary, the present invention provides a MICRO LED chip transfer method, which comprises transferring a MICRO LED chip on a substrate to a first hot melt adhesive layer, transferring the MICRO LED chip from the first hot melt adhesive layer to a second hot melt adhesive layer, and transferring and bonding the MICRO LED chip to a target object by using the second hot melt adhesive layer; in the whole transfer process, the MICRO LED chip is fixed and released by utilizing the characteristic that the state of the hot melt adhesive material changes along with the temperature, and in each transfer process of the MICRO LED chip, the position fixity of the MICRO LED chip is ensured by utilizing the outstanding advantage of the fixing capacity of the hot melt adhesive material to the MICRO LED chip; in addition, in the aspect of removing the redundant materials contacted with the MICRO LED chip, the materials are prevented from being removed in a relative action mode of rigid force transmission, and the effect that large external force is not applied to the MICRO LED chip can be ensured as far as possible, so that the position of the MICRO LED chip is prevented from moving, and the position stability of the MICRO LED chip is improved; the transfer yield of the MICRO LED chip transfer method can be improved by reasonably selecting the types of the first hot melt adhesive material and the second hot melt adhesive material; the MICRO LED chip transfer method can effectively transfer a large number of MICRO LED chips on a wafer to a target object, and has the advantages of low implementation difficulty, high transfer success rate and the like.
Drawings
Fig. 1 is a flowchart illustrating a MICRO LED chip transfer method according to an embodiment of the present invention.
Fig. 2 is a schematic diagram illustrating the principle of step S101 of the MICRO LED chip transfer method according to the embodiment of the present invention.
Fig. 3 is a schematic diagram illustrating the principle of step S102 of the MICRO LED chip transfer method according to the embodiment of the present invention.
Fig. 4 is a schematic diagram illustrating the principle of step S104 of the MICRO LED chip transfer method according to the embodiment of the present invention.
Fig. 5 is a schematic diagram illustrating the principle of step S105 of the MICRO LED chip transferring method according to the embodiment of the present invention.
Fig. 6 is a schematic diagram illustrating the principle of step S106 of the MICRO LED chip transfer method according to the embodiment of the present invention.
Fig. 7 is a schematic diagram illustrating the principle of step S107 of the MICRO LED chip transfer method according to the embodiment of the present invention.
Fig. 8 is a schematic view of the principle of step S109 of the MICRO LED chip transfer method according to the embodiment of the present invention.
Fig. 9 is a schematic diagram illustrating the principle of step S110 of the MICRO LED chip transferring method according to the embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
fig. 1 is a flowchart illustrating a MICRO LED chip transfer method according to an embodiment of the present invention.
The invention provides a MICRO LED chip transfer method, which comprises the following steps:
s101: spin-coating a first hot-melt adhesive material on a first glass substrate 1, wherein the first hot-melt adhesive material is solidified to form a first hot-melt adhesive layer 2;
fig. 2 is a schematic diagram illustrating the principle of step S101 of the MICRO LED chip transferring method according to the embodiment of the present invention, specifically, the top surface of the first glass substrate 1 is cleaned to make the surface cleanliness of the first glass substrate 1 meet the requirement, then the spin coating of the first hot melt adhesive material is performed on the top surface of the first glass substrate 1, and after the spin coating of the first hot melt adhesive material is completed, the desired first hot melt adhesive layer 2 is formed on the top surface of the first glass substrate 1.
S102: hot-pressing a wafer 5 into the first hot melt adhesive layer 2, wherein the MICRO LED chip 4 on the wafer 5 is wholly sunk into the first hot melt adhesive layer 2;
referring to fig. 2 of the drawings, in particular, a bare chip on which a MICRO LED chip 4 is processed on a wafer 5, in particular, the MICRO LED chip 4 is processed on a substrate 3 in a state of not being peeled off from the substrate 3.
Fig. 3 is a schematic diagram illustrating the principle of step S102 of the MICRO LED chip transferring method according to the embodiment of the invention, in which the substrate 3 drives the wafer 5 to move integrally, and the wafer 5 is hot-pressed into the first hot-melt adhesive layer 2; under a thermal environment satisfying the requirement, the first hot-melt adhesive material on the first hot-melt adhesive layer 2 melts (has a certain deformability, and is not in a liquid state), and the MICRO LED chip 4 on the wafer 5 sinks into the first hot-melt adhesive layer 2. Specifically, the main material of the substrate of the wafer can be sapphire, silicon carbide, silicon, gallium nitride, zinc oxide, ZnSe zinc selenide and other materials, and in practical implementation, the lattice mismatch rate of sapphire and gallium nitride is low, the processing technology of sapphire and gallium nitride is mature, the processing cost is low, and the sapphire and gallium nitride are the main substrate materials in the existing wafer manufacturing.
Specifically, in order to avoid the overflow of the first hot-melt adhesive material, a shielding mold may be disposed around the first glass substrate 1; accordingly, since the MICRO LED chip 4 is sunk in the first hot melt adhesive layer 2, the height of the first hot melt adhesive layer 2 is increased accordingly.
S103: after the first hot melt adhesive layer 2 is re-solidified, the MICRO LED chip 4 is embedded and fixed in the first hot melt adhesive layer 2;
referring to fig. 3 of the drawings, specifically, after the first hot melt adhesive layer 2 is re-solidified, since the MICRO LED chip 4 is embedded in the first hot melt adhesive layer 2, the MICRO LED chip 4 can be well fixed by the first hot melt adhesive layer 2.
S104: peeling off the substrate 3 on the wafer 5 to separate the substrate 3 from the MICRO LED chip 4, wherein the first surface of the MICRO LED chip is exposed out of the first hot melt adhesive layer;
fig. 4 is a schematic view of the principle of step S104 of the MICRO LED chip transfer method according to the embodiment of the present invention, in which the MICRO LED chip is fixed by the first hot melt adhesive layer 2, and under this condition, the substrate 3 is peeled off from the MICRO LED chip 4 by means of laser peeling or the like, the MICRO LED chip 4 remains embedded in the first hot melt adhesive layer 2, and the first surface of the MICRO LED chip (i.e., the top surface of the illustrated MICRO LED chip) is exposed to the first hot melt adhesive layer. It should be noted that, in the embodiment of the present invention, the structure of the wafer is different from the structure of the wafer in the prior art, in the wafer structure of the embodiment of the present invention, the gallium nitride material is only in contact with the substrate to maintain the connection, and after the laser lift-off, a desired chip structure (a chip structure in a non-final form) is formed in the first hot melt adhesive layer 2.
S105: spin-coating a second hot-melt adhesive material on the second glass substrate 6, wherein the second hot-melt adhesive material is solidified to form a second hot-melt adhesive layer 8;
fig. 5 is a schematic view illustrating the principle of step S105 of the MICRO LED chip transfer method according to the embodiment of the present invention, specifically, preparing the second glass substrate 6 and spin-coating the second hot-melt adhesive material on the second glass substrate 6, wherein the second hot-melt adhesive material is cured to form the second hot-melt adhesive layer 8.
Further, because follow-up needs separate second glass substrate 6 and second hot melt adhesive layer 8, in order to reduce the separation degree of difficulty of second glass substrate 6 and second hot melt adhesive layer 8 before spin-coating second hot melt adhesive material on second glass substrate 6 spin-coating second transition material on second glass substrate 6, second transition material forms second transition layer 7, the second hot melt adhesive material is spin-coated on second transition layer 7, second transition material is photosensitive characteristic material.
The second transition material is a PI system material or a UV system material. Specifically, the PI system material is a polyimide material which has laser sensitivity; the UV system material refers to a material with purple light sensitive characteristic.
Further, before the second hot melt adhesive material is spin-coated on the second transition layer 7, a second pattern with a preset depth may be etched on the surface of the second transition layer 7 based on a photolithography process. Typically, the depth of the second pattern is about 1 um.
The second pattern is arranged on the surface of the second transition layer 7, so that the uniform glue of the second hot melt adhesive material on the second transition layer 7 is favorably solidified into a film, and the success rate of LLO stripping and the transfer yield can be better ensured.
S106: hot-pressing the second glass substrate 6 on the first glass substrate 1 to enable the second hot-melt adhesive layer 8 to be attached to the first hot-melt adhesive layer 2, and attaching the first surface of the MICRO LED chip to the second hot-melt adhesive layer 8;
fig. 6 is a schematic diagram illustrating the principle of step S106 of the MICRO LED chip transferring method according to the embodiment of the present invention, specifically, the second glass substrate 6 drives the second hot-melt adhesive layer 8 to be attached to the first hot-melt adhesive layer 2, and the first surface of the MICRO LED chip 4 is exposed outside the first hot-melt adhesive layer 2, so that when the second hot-melt adhesive layer 8 is attached to the first hot-melt adhesive layer 2, the surface of the MICRO LED chip 4 contacts the second hot-melt adhesive layer 8, and the second hot-melt adhesive layer 8 can generate a certain fixing capacity for the MICRO LED chip 4 after being cured.
Further, in order to avoid the displacement of the MICRO LED chip, the curing temperature of the first hot-melt adhesive material is higher than that of the second hot-melt adhesive material, and through the embodiment, when the second hot-melt adhesive material is melted to fix the MICRO LED chip, the first hot-melt adhesive material can also keep a relatively stable solid state, so that the movement of the MICRO LED chip is avoided.
S107: peeling the first glass substrate 1 from the first hot melt adhesive layer 2, and removing the first hot melt adhesive layer 2 with a first cleaning solution;
fig. 7 is a schematic view illustrating the principle of step S107 of the MICRO LED chip transfer method according to the embodiment of the present invention, specifically, the first glass substrate 1 is peeled off from the first hot melt adhesive layer 2 by mechanical peeling or the like, and the first hot melt adhesive layer 2 is removed by using a first cleaning solution. After this step, the MICRO LED chip 4 is fixed by the second hot melt adhesive layer 8, and the electrode of the MICRO LED chip 4 is exposed for external bonding of the MICRO LED chip 4.
S108: the MICRO LED chip is driven to be transferred to a target object 9 through the second glass substrate 6;
fixing the MICRO LED chip 4 by using a second hot melt adhesive layer 8, and driving the MICRO LED chip 4 to be transferred to a preset position of a target object 9 through a second glass substrate 6.
S109: bonding the MICRO LED chip to the target object 9;
fig. 8 is a schematic conceptual diagram of step S109 of the MICRO LED chip transfer method according to the embodiment of the present invention, in which the MICRO LED chip 4 is bonded to the target object 9 through a specific process, after which the MICRO LED chip 4 is connected to the target object 9.
Specifically, the bonding temperature of the MICRO LED chip 4 bonded to the target object 9 is lower than the curing temperature of the second hot melt adhesive layer 8, so that the second hot melt adhesive layer 8 is not softened during the bonding process of the MICRO LED chip 4, and the MICRO LED chip 4 is prevented from being dislocated.
S110: peeling the second glass substrate 6 from the second hot melt adhesive layer 8, and removing the second hot melt adhesive layer 8 with a second cleaning solution;
fig. 9 is a schematic view illustrating the principle of step S110 of the MICRO LED chip transfer method according to the embodiment of the present invention, specifically, the second glass substrate 6 is peeled off from the second hot melt adhesive layer 8, and the second hot melt adhesive layer 8 is removed by the second cleaning solution.
Specifically, in the embodiment of the present invention, since the second transition layer 7 is disposed between the second glass substrate 6 and the second hot melt adhesive layer 8, and the material of the second transition layer 7 is a photosensitive material, in this step, the glass manner of the second glass substrate 6 may be that the second transition layer 7 is irradiated by a second light source matched with the second transition material to remove the second transition material, and the second glass substrate 6 is separated from the second hot melt adhesive layer 8.
Referring to the schematic structure of fig. 9 of the drawings, after the processing of steps S101 to S110, the MICRO LED chip 4 on the wafer 5 is transfer bonded from the substrate 3 to the target object 9.
Specifically, the target object 9 may be an external component such as a circuit board to which a MICRO LED chip is to be bonded.
Example two:
similar to the implementation of the second transition layer 7, specifically, since the first glass substrate 1 needs to be peeled off from the first hot melt adhesive layer 2 in step S107 of the first embodiment, in order to reduce the peeling difficulty of the first glass substrate 1, in the embodiment of the present invention, before the first hot melt adhesive material is spin-coated on the first glass substrate 1, a first transition material is spin-coated on the first glass substrate 1, the first transition material forms a first transition layer, the first hot melt adhesive material is spin-coated on the first transition layer, and the first transition material is a light-sensitive material;
correspondingly, the peeling the first glass substrate 1 from the first hot melt adhesive layer 2 includes:
and irradiating the first transition layer by a first light source matched with the first transition material to remove the second transition material, wherein the first glass substrate 1 is separated from the first hot melt adhesive layer 2.
Further, before the first hot melt adhesive material is coated on the first transition layer in a spinning mode, a first pattern with a preset depth is etched on the surface of the first transition layer on the basis of a photoetching process.
To sum up, the embodiment of the present invention provides a MICRO LED chip transfer method, which comprises transferring a MICRO LED chip on a substrate to a first hot melt adhesive layer, transferring the MICRO LED chip from the first hot melt adhesive layer to a second hot melt adhesive layer, and transferring and bonding the MICRO LED chip to a target object by using the second hot melt adhesive layer; in the whole transfer process, the MICRO LED chip is fixed and released by utilizing the characteristic that the state of the hot melt adhesive material changes along with the temperature, and in each transfer process of the MICRO LED chip, the position fixity of the MICRO LED chip is ensured by utilizing the outstanding advantage of the fixing capacity of the hot melt adhesive material to the MICRO LED chip; in addition, in the aspect of removing the redundant materials contacted with the MICRO LED chip, the materials are prevented from being removed in a relative action mode of rigid force transmission, and the effect that large external force is not applied to the MICRO LED chip can be ensured as far as possible, so that the position of the MICRO LED chip is prevented from moving, and the position stability of the MICRO LED chip is improved; the transfer yield of the MICRO LED chip transfer method can be improved by reasonably selecting the types of the first hot melt adhesive material and the second hot melt adhesive material; the MICRO LED chip transfer method can effectively transfer a large number of MICRO LED chips on a wafer to a target object, and has the advantages of low implementation difficulty, high transfer success rate and the like.
The above detailed description of the MICRO LED chip transfer method provided by the embodiment of the present invention is provided, and the principle and the embodiment of the present invention are explained herein by applying specific examples, and the above description of the embodiment is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for a person skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.

Claims (10)

1. A MICRO LED chip transfer method, comprising:
spin-coating a first hot-melt adhesive material on a first glass substrate, wherein the first hot-melt adhesive material is solidified to form a first hot-melt adhesive layer;
hot-pressing a wafer into the first hot-melt adhesive layer, wherein the MICRO LED chip on the wafer is wholly sunk into the first hot-melt adhesive layer;
after the first hot melt adhesive layer is solidified, the MICRO LED chip is embedded and fixed in the first hot melt adhesive layer;
peeling off the substrate on the wafer to separate the substrate from the MICRO LED chip, wherein the first surface of the MICRO LED chip is exposed out of the first hot melt adhesive layer;
spin-coating a second hot-melt adhesive material on the second glass substrate, wherein the second hot-melt adhesive material is solidified to form a second hot-melt adhesive layer;
hot-pressing the second glass substrate on the first glass substrate to enable the second hot-melt adhesive layer to be attached to the first hot-melt adhesive layer, wherein the first surface of the MICRO LED chip is attached to the second hot-melt adhesive layer;
peeling the first glass substrate from the first hot melt adhesive layer, and removing the first hot melt adhesive layer by using a first cleaning solution;
driving the MICRO LED chip to be transferred to a target object through the second glass substrate;
bonding the MICRO LED chip to the target object;
and peeling the second glass substrate from the second hot melt adhesive layer, removing the second hot melt adhesive layer by using a second cleaning solution, and transferring the MICRO LED chip from the substrate to the target object.
2. The MICRO LED chip transfer method of claim 1, wherein the first hot melt adhesive material is a polar material, and the first cleaning solution is a polar material cleaning solution; the second hot-melt adhesive material is a non-polar material, and the second cleaning solution is a non-polar material cleaning solution;
or the first hot-melt adhesive material is a non-polar material, and the first cleaning solution is a non-polar material cleaning solution; the second hot-melt adhesive material is a polar material, and the second cleaning solution is a polar material cleaning solution.
3. The MICRO LED chip transfer method of claim 1, wherein the curing temperature of the first hot melt adhesive material is higher than the curing temperature of the second hot melt adhesive material.
4. The method for transferring a MICRO LED chip according to claim 1, wherein before the second glass substrate is spin-coated with the second hot melt adhesive material, a second transition material is spin-coated on the second glass substrate, the second transition material forms a second transition layer, the second hot melt adhesive material is spin-coated on the second transition layer, and the second transition material is a photosensitive material;
peeling the second glass substrate from the second hot melt adhesive layer comprises:
and irradiating the second transition layer through a second light source matched with the second transition material to remove the second transition material, wherein the second glass substrate is separated from the second hot melt adhesive layer.
5. The MICRO LED chip transfer method of claim 4, wherein the second transition material is a PI system material or a UV system material.
6. The MICRO LED chip transfer method of claim 4, wherein a second pattern having a predetermined depth is etched on the surface of the second transition layer based on a photolithography process before the second hot melt adhesive material is spin-coated on the second transition layer.
7. The method for transferring a MICRO LED chip according to claim 1, wherein a first transition material is spin-coated on the first glass substrate before the first hot-melt adhesive material is spin-coated on the first glass substrate, the first transition material forming a first transition layer, the first hot-melt adhesive material being spin-coated on the first transition layer, the first transition material being a photosensitive material;
peeling the first glass substrate from the first hot melt adhesive layer comprises:
and irradiating the first transition layer through a first light source matched with the first transition material to remove the second transition material, wherein the first glass substrate is separated from the first hot melt adhesive layer.
8. The MICRO LED chip transfer method of claim 7, wherein a first pattern having a preset depth is etched on the surface of the first transition layer based on a photolithography process before the first hot melt adhesive material is spin-coated on the first transition layer.
9. The MICRO LED chip transfer method of claim 1, wherein the hot pressing the wafer into the first layer of hot melt adhesive comprises:
and hot-pressing the wafer into the first hot melt adhesive layer through vacuum laminating equipment.
10. The MICRO LED chip transfer method of claim 1, wherein hot pressing the second glass substrate onto the first glass substrate to bond the second hot melt adhesive layer to the first hot melt adhesive layer comprises:
and hot-pressing the second glass substrate on the first glass substrate through vacuum laminating equipment to laminate the second hot-melt adhesive layer with the first hot-melt adhesive layer.
CN202111095379.5A 2021-09-17 2021-09-17 MICRO LED chip transfer method Pending CN113948432A (en)

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