CN113948383A - Method and system for cutting wafer from back surface of wafer - Google Patents
Method and system for cutting wafer from back surface of wafer Download PDFInfo
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- CN113948383A CN113948383A CN202111211917.2A CN202111211917A CN113948383A CN 113948383 A CN113948383 A CN 113948383A CN 202111211917 A CN202111211917 A CN 202111211917A CN 113948383 A CN113948383 A CN 113948383A
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- 238000000034 method Methods 0.000 title claims abstract description 31
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 claims description 5
- 238000012795 verification Methods 0.000 claims 4
- 238000004806 packaging method and process Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000010354 integration Effects 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67294—Apparatus for monitoring, sorting or marking using identification means, e.g. labels on substrates or labels on containers
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Dicing (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a method and a system for cutting a wafer from the back of the wafer, wherein the method specifically comprises the following steps: (1) grinding and thinning the wafer, placing the wafer in a fixed ring of a chip mounting platform with the front side facing upwards, and covering a film on the front side of the wafer to finish chip mounting; (2) taking down the wafer pasted in the step (1), removing redundant films, and placing the wafer on a cutting platform with the front face facing downwards; (3) an IR camera is arranged above the back surface of the wafer and connected with a controller, the IR camera is aligned with the back surface of the wafer to shoot images and send the images to the controller, the controller analyzes the images to obtain a graph of the back surface of the wafer, and the graph corresponds to a cutting channel on the front surface of the wafer; (4) and (4) cutting the wafer according to the pattern on the back surface of the wafer obtained in the step (3). The method for cutting the wafer from the back surface of the wafer improves the productivity of the wafer.
Description
Technical Field
The invention belongs to the technical field of semiconductor packaging, and particularly relates to a method and a system for cutting a wafer from the back side of the wafer.
Background
With the development of semiconductor technology, the integration level of chips is higher and higher. The wafer comprises a front surface and a back surface which are opposite, a longitudinal cutting channel and a transverse cutting channel are carved on the front surface, and the minimum unit enclosed by the cutting channels is a chip. In the semiconductor packaging process, the wafer needs to be cut into individual chips, and then the chips are made into different semiconductor packaging structures. Therefore, dicing is a critical process in semiconductor packaging.
The fan-out wafer level package (fowlp) technology has become an important packaging method for high-demand electronic devices such as mobile/wireless networks due to its advantages of miniaturization, low cost, high integration, better performance, and higher energy efficiency, and is one of the most promising packaging technologies.
When a fan-out wafer level package (fowlp) technology is used for chip packaging, a single chip obtained by cutting is required to be Face-down flipped (Flip chip Face down) on the surface of a carrier board. Because the scribe lines are disposed on the front surface of the wafer, the scribe lines are not shown on the back surface of the wafer. Therefore, in the prior art, the wafer is almost cut with the front side of the wafer facing upward. That is to say, when chip packaging is performed by using a fan-out wafer level package (fowlp) technology, the chip needs to be turned over in the process of chip mounting after the wafer is cut, and then the chip mounting can be performed. The wafer is turned over and handed over, so that the productivity of equipment is wasted, the processing time of the wafer is delayed, and the productivity of the wafer is reduced. In addition, during the wafer turning and transferring process, the chip position is easy to shift, the chip surface is easy to scratch, and the chip is contaminated by foreign matters.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a novel method for cutting a wafer from the back side of the wafer.
In order to achieve the above object, the present invention provides a method for cutting a wafer from a back side of the wafer, the method specifically comprises the following steps:
(1) grinding and thinning the wafer, placing the wafer in a fixed ring of a chip mounting platform with the front side facing upwards, and covering a film on the front side of the wafer to finish chip mounting;
(2) taking down the wafer pasted in the step (1), removing redundant films, and placing the wafer on a cutting platform with the front face facing downwards;
(3) an IR camera is arranged above the back surface of the wafer and connected with a controller, the IR camera is aligned with the back surface of the wafer to shoot images and send the images to the controller, the controller analyzes the images to obtain a graph of the back surface of the wafer, and the graph corresponds to a cutting channel on the front surface of the wafer;
(4) and (4) cutting the wafer according to the pattern on the back surface of the wafer obtained in the step (3).
In some embodiments, after the wafer is mounted in step (1), the wafer is rolled at a constant speed by using a roller. The film and the product are combined closely.
In some embodiments, the film is determined based on the wafer thickness and the wafer front side metal line thickness. Selecting an appropriate film can improve wafer mount quality.
In some embodiments, the lamp light intensity is adjusted before the IR camera images in step (3).
In some embodiments, the proper blade is determined according to the width of the cutting track when the wafer is cut in the step (4).
In some embodiments, the IR camera employs an InGaAs infrared camera.
The invention also provides a system for implementing the method, which comprises the following steps: a patch platform, a cutting platform, an IR camera and a controller; the chip mounting platform is used for bearing the wafer so as to finish chip mounting of the wafer; the cutting platform is used for bearing the wafer after the chip mounting, and the front side of the wafer is placed on the cutting platform downwards; the IR camera is arranged above the cutting platform and connected with the controller, and the controller is connected with the cutting platform; the method comprises the steps that an IR camera is aligned with the back of a wafer to shoot images, the images are sent to a controller, the controller analyzes the images to obtain graphs of the back of the wafer, and the graphs correspond to cutting channels on the front of the wafer; the controller sends the image to the cutting platform, and the cutting platform presets a cutting position according to the image in the image and cuts the wafer according to the preset cutting position.
In some embodiments, the cutting platform includes a calibration module, the calibration module adjusts the wafer position to make the preset cutting position consistent with the wafer position, and after the calibration module calibrates, the cutting platform cuts the wafer according to the preset cutting position.
Compared with the prior art, the invention has the beneficial effects that: according to the method and the system, the cutting channels on the front side of the wafer are identified from the back side of the wafer by using the IR camera and are cut, and in the subsequent chip mounting process of the wafer, the chip mounting equipment only needs to absorb the original piece from the cutting film and then directly attaches the original piece to the substrate, so that the turning and handing-over actions of the wafer are reduced, the surface of a chip is not easy to scratch, the chip is not polluted by foreign matters, and the productivity of the wafer is also improved.
Drawings
FIG. 1 is a schematic diagram of a wafer and a mounting platform in a system;
FIG. 2 is a schematic diagram of the IR camera and cutting platform of the system;
FIG. 3 is a schematic diagram of an IR camera emitting infrared light from the back side of a wafer.
Detailed Description
The present disclosure is described in detail below with reference to various embodiments, but it should be understood that these embodiments are not intended to limit the present disclosure, and a person skilled in the art may make functional, methodological, or structural equivalent changes or substitutions based on these embodiments within the scope of the present disclosure.
As shown in fig. 1 and fig. 2, the present invention provides a method for cutting a wafer 1 from a back surface of the wafer 1, which specifically includes the following steps:
(1) grinding and thinning the wafer 1, placing the wafer 1 with the front side facing upwards in a fixing ring 30 of a chip mounting platform 3, and covering a film 2 on the front side of the wafer 1 to finish chip mounting;
(2) taking down the wafer 1 subjected to the surface mounting in the step (1), removing the redundant film 2, and placing the wafer 1 on a cutting platform 4 with the front surface facing downwards;
(3) an IR camera 5 is arranged above the back surface of the wafer 1, the IR camera 5 is connected with a controller 6, and the IR camera 5 is aligned with the back surface of the wafer 1 to shoot images and send the images to the controller 6. The controller 6 analyzes the image to obtain a pattern on the back surface of the wafer 1, which corresponds to the scribe lines 11 on the front surface of the wafer 1.
Specifically, the IR camera 5 receives reflected light from the metal line 10 on the front surface of the wafer 1, and a pattern is formed on the back surface of the wafer 1 at a position where the reflected light is not received, where the pattern corresponds to the scribe line 11 on the front surface of the wafer 1; in the step (3), the light intensity needs to be adjusted before the IR camera 5 images.
(4) And (4) cutting the wafer 1 according to the pattern of the back surface of the wafer 1 obtained in the step (3).
According to the invention, the IR camera 5 is used for identifying the cutting channel 11 on the front side of the wafer 1 from the back side of the wafer 1 and cutting the wafer, and the method ensures that the chip mounting equipment only needs to absorb an original from the cutting film 2 and then directly attaches the original to the substrate in the subsequent chip mounting process of the wafer 1, so that the overturning and handing-over actions of the wafer 1 are reduced, the surface of a chip is not easy to scratch, the chip is not polluted by foreign matters, and the productivity of the wafer 1 is also improved. The whole method has simple steps and is easy to operate.
The invention also provides a system for implementing the method, which comprises the following steps: a patch platform 3, a cutting platform 4, an IR camera 5 and a controller 6; the chip mounting platform 3 is used for bearing the wafer 1 to complete chip mounting of the wafer 1; the cutting platform 4 is used for bearing the wafer 1 after the chip mounting, and the front surface of the wafer 1 is downwards placed on the cutting platform 4; the IR camera 5 is arranged above the cutting platform 4, the IR camera 5 is connected with the controller 6, and the controller 6 is connected with the cutting platform 4; the IR camera 5 shoots an image aiming at the back of the wafer 1 and sends the image to the controller 6, and the controller 6 analyzes the image to obtain a pattern of the back of the wafer 1, wherein the pattern corresponds to the cutting channel 11 on the front of the wafer 1; the controller 6 sends the image to the cutting platform 4, and the cutting platform 4 presets a cutting position according to the image in the image and cuts the wafer 1 according to the preset cutting position.
The cutting platform 4 further comprises a checking module, the checking module adjusts the position of the wafer 1 to enable the preset cutting position to be consistent with the position of the wafer 1, and after the checking module checks, the cutting platform 4 cuts the wafer 1 according to the preset cutting position. The arrangement of the module can ensure that the wafer cutting is more accurate. The check module belongs to the prior art, and can be selected by a person skilled in the art according to needs.
In the invention, the IR camera 5 adopts a C12741-03 InGaAs infrared camera of HAMAMATSU. Indium gallium arsenide (InGaAs) sensors are the main sensors used in the near infrared, and can observe light rays of 950nm to 1700 nm.
The near infrared is generally defined as light in the wavelength range of 700-1600nm, and also obeys the laws of linear propagation, reflection and refraction of light. Because the wavelength of the light in the near infrared region is short, the light is not absorbed by the silicon material of the wafer 1, the light is reflected by the metal circuit on the front surface of the wafer 1 after passing through the silicon material of the wafer 1, the IR camera 5 is used for observing the back surface of the wafer 1, the IR camera 5 can receive the reflected light of the metal circuit 10 on the front surface of the wafer 1, and the position where the reflected light is not received forms a pattern on the back surface of the wafer 1, wherein the pattern corresponds to the cutting street 11 on the front surface of the wafer 1.
When the method is implemented specifically, after the wafer 1 is pasted with the patches in the step (1), the wafer is rolled at a constant speed by using the roller 7. The film 2 and the product are intimately bonded.
The film 2 is determined according to the thickness of the wafer 1 and the thickness of the metal circuit 10 on the front surface of the wafer 1. Selecting an appropriate film 2 can improve the wafer 1 patch quality. When the thickness of the metal lines 10 on the front surface of the wafer 1 is less than 11um, the UV film 2 with the thickness of 170um is preferentially used for pasting, and if the product is a UV sensitive product, the 370 film 2 of Non-UV is used for pasting. When the thickness of the metal circuit 10 on the front surface of the wafer 1 is larger than 11um, the UV film 2 of 595 is preferentially used for pasting, and if the product is a UV sensitive product, the film 2 of Non-UV 595 is used for pasting.
Aligning the IR camera 5 to the back of the wafer 1 and starting the IR camera 5, wherein the IR camera 5 emits infrared light toward the back of the wafer 1, as shown in fig. 3, the infrared light encounters the metal circuit 10 on the front of the wafer 1 and reflects the light to the IR camera 5, and the scribe line 11 and the film 2 on the front of the wafer 1 encounter the infrared light and do not reflect the light, so that the infrared light encounters the scribe line 11 and the film 2 on the front of the wafer 1 and is directly penetrated, and the IR camera 5 does not receive the reflected light; thus, the pattern formed on the back surface of the wafer 1 corresponds to the scribe line 11 on the front surface of the wafer 1; the scribe lines 11 on the front surface of the wafer 1 are clearly and accurately recognized from the back surface of the wafer 1 by the IR camera 5.
After the scribe lines 11 are identified, the wafer 1 is diced by determining an appropriate blade according to the width of the scribe lines 11. Selecting a combination of CB and BA when the width of the cutting path 11 is less than 60 um; when the width of the cutting channel 11 is between 60um and 80um, the blade combination of the DD matched with the CC can be selected; when the width of the cutting channel 11 is larger than 80um, a blade combination of FE and DC can be selected. In the actual use process, the thickness of the wafer 1 and the thickness of the metal circuit on the front surface of the wafer 1 need to be considered, and the blade corresponding to the particle number is selected, which belongs to the prior art and is not described in detail in the invention.
The undescribed parts of the present invention are the same as or implemented using prior art.
What has been described above is merely some embodiments of the present disclosure. It will be apparent to those skilled in the art that various changes and modifications can be made without departing from the inventive concept of the present disclosure, which falls within the scope of the disclosure.
Claims (8)
1. A method for cutting a wafer from the back side of the wafer is characterized by comprising the following steps:
(1) grinding and thinning the wafer, placing the wafer in a fixed ring of a chip mounting platform with the front side facing upwards, and covering a film on the front side of the wafer to finish chip mounting;
(2) taking down the wafer pasted in the step (1), removing redundant films, and placing the wafer on a cutting platform with the front face facing downwards;
(3) an IR camera is arranged above the back surface of the wafer and connected with a controller, the IR camera is aligned with the back surface of the wafer to shoot images and send the images to the controller, the controller analyzes the images to obtain a graph of the back surface of the wafer, and the graph corresponds to a cutting channel on the front surface of the wafer;
(4) and (4) cutting the wafer according to the pattern on the back surface of the wafer obtained in the step (3).
2. The method as claimed in claim 1, wherein the wafer is rolled at a constant speed by a roller after being mounted in the step (1).
3. The method as claimed in claim 1, wherein the film is determined according to the thickness of the wafer and the thickness of the metal circuit on the front surface of the wafer.
4. A method as claimed in any one of claims 1 to 3, wherein the lamp light intensity is adjusted before the IR camera image in step (3).
5. The method as claimed in claim 4, wherein the wafer is diced in step (4) by determining the proper blade according to the width of the scribe line.
6. The method of claim 1, wherein the IR camera is an InGaAs infrared camera.
7. A system for implementing the method of claim 1, the system comprising: a patch platform, a cutting platform, an IR camera and a controller;
the chip mounting platform is used for bearing the wafer to complete chip mounting of the wafer;
the cutting platform is used for bearing the wafer after the chip mounting, and the front side of the wafer is placed on the cutting platform downwards;
the IR camera is arranged above the cutting platform and connected with the controller, and the controller is connected with the cutting platform;
the IR camera is aligned with the back of the wafer to shoot images and sends the images to the controller, and the controller analyzes the images to obtain graphs of the back of the wafer, wherein the graphs correspond to cutting channels on the front of the wafer;
the controller sends the image to the cutting platform, and the cutting platform presets a cutting position according to the image in the image and cuts the wafer according to the preset cutting position.
8. The system of claim 7, wherein the dicing platform comprises a verification module, the verification module adjusts the wafer position to make the preset dicing position consistent with the wafer position, and after the verification by the verification module, the dicing platform dices the wafer according to the preset dicing position.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111211917.2A CN113948383A (en) | 2021-10-18 | 2021-10-18 | Method and system for cutting wafer from back surface of wafer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111211917.2A CN113948383A (en) | 2021-10-18 | 2021-10-18 | Method and system for cutting wafer from back surface of wafer |
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| CN113948383A true CN113948383A (en) | 2022-01-18 |
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| CN202111211917.2A Pending CN113948383A (en) | 2021-10-18 | 2021-10-18 | Method and system for cutting wafer from back surface of wafer |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117020446A (en) * | 2023-10-09 | 2023-11-10 | 江苏芯德半导体科技有限公司 | Cutting method of silicon substrate gallium nitride wafer |
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| JPH06232255A (en) * | 1993-01-29 | 1994-08-19 | Disco Abrasive Syst Ltd | Method of dicing wafer |
| JPH10335271A (en) * | 1997-06-02 | 1998-12-18 | Texas Instr Japan Ltd | Wafer pasting sheet and manufacture of semiconductor device |
| CN104124176A (en) * | 2013-04-24 | 2014-10-29 | 万国半导体股份有限公司 | Method for preparation of semiconductor device used in flip installing process |
| CN104668782A (en) * | 2013-12-02 | 2015-06-03 | 光环科技股份有限公司 | Laser cutting method for semiconductor wafer |
| CN106711091A (en) * | 2017-01-20 | 2017-05-24 | 中国科学院微电子研究所 | MEMS wafer cutting method and MEMS chip manufacturing method |
| CN109524352A (en) * | 2017-09-19 | 2019-03-26 | 株式会社迪思科 | The processing method of chip |
| CN111463160A (en) * | 2019-01-18 | 2020-07-28 | 芯恩（青岛）集成电路有限公司 | Semiconductor device and manufacturing method thereof |
| CN112885720A (en) * | 2021-01-14 | 2021-06-01 | 江西译码半导体有限公司 | Wafer cutting method |
-
2021
- 2021-10-18 CN CN202111211917.2A patent/CN113948383A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06232255A (en) * | 1993-01-29 | 1994-08-19 | Disco Abrasive Syst Ltd | Method of dicing wafer |
| JPH10335271A (en) * | 1997-06-02 | 1998-12-18 | Texas Instr Japan Ltd | Wafer pasting sheet and manufacture of semiconductor device |
| CN104124176A (en) * | 2013-04-24 | 2014-10-29 | 万国半导体股份有限公司 | Method for preparation of semiconductor device used in flip installing process |
| CN104668782A (en) * | 2013-12-02 | 2015-06-03 | 光环科技股份有限公司 | Laser cutting method for semiconductor wafer |
| CN106711091A (en) * | 2017-01-20 | 2017-05-24 | 中国科学院微电子研究所 | MEMS wafer cutting method and MEMS chip manufacturing method |
| CN109524352A (en) * | 2017-09-19 | 2019-03-26 | 株式会社迪思科 | The processing method of chip |
| CN111463160A (en) * | 2019-01-18 | 2020-07-28 | 芯恩（青岛）集成电路有限公司 | Semiconductor device and manufacturing method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117020446A (en) * | 2023-10-09 | 2023-11-10 | 江苏芯德半导体科技有限公司 | Cutting method of silicon substrate gallium nitride wafer |
| CN117020446B (en) * | 2023-10-09 | 2023-12-26 | 江苏芯德半导体科技有限公司 | Cutting method of silicon substrate gallium nitride wafer |
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