CN113933768B - AMR reluctance structure and Wheatstone bridge - Google Patents
AMR reluctance structure and Wheatstone bridge Download PDFInfo
- Publication number
- CN113933768B CN113933768B CN202111067618.6A CN202111067618A CN113933768B CN 113933768 B CN113933768 B CN 113933768B CN 202111067618 A CN202111067618 A CN 202111067618A CN 113933768 B CN113933768 B CN 113933768B
- Authority
- CN
- China
- Prior art keywords
- magnetic resistance
- semicircular magnetic
- semicircular
- resistance strips
- strips
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000007246 mechanism Effects 0.000 claims description 3
- 238000001514 detection method Methods 0.000 abstract description 6
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- 230000008859 change Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004804 winding Methods 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000005415 magnetization Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
- G01R33/096—Magnetoresistive devices anisotropic magnetoresistance sensors
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Measuring Magnetic Variables (AREA)
Abstract
The invention discloses an AMR magnetic resistance structure and a Wheatstone bridge, wherein the AMR magnetic resistance structure comprises: a first resistor and a third resistor; the first resistor comprises a plurality of first semicircular magnetic resistance strips and a plurality of second semicircular magnetic resistance strips; the third resistor comprises a plurality of third semicircular magnetic resistance strips and a plurality of fourth semicircular magnetic resistance strips; the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips have the same circle center; the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips form a plurality of circles which are sequentially arranged and have different radius sizes. The AMR reluctance structure and the Wheatstone bridge provided by the invention can improve the matching property of AMR, reduce the chip area and avoid interference to the detection of an external magnetic field.
Description
Technical Field
The invention belongs to the technical field of microelectronics, and relates to a magneto-resistive element, in particular to an AMR magneto-resistive structure and a Wheatstone bridge.
Background
Anisotropic magnetoresistive elements (Anisotropic Magneto-Resistive, AMR for short) are important magnetic sensor elements for detecting magnetic fields. The device is widely applied to automobiles, industrial control, household appliances and communication equipment and is used for detecting information such as speed, angle and position. Compared with the traditional Hall effect element, the AMR has the excellent characteristics of low power consumption, high sensitivity and the like. The structure of AMR itself can have a significant impact on output amplitude and OFFSET.
Fig. 1 shows a wheatstone (Wheatstone bridge) bridge consisting of 4 AMR elements. The working principle is that after a certain voltage VDD is loaded, the differential voltage output VOUT=VP-VN of the voltage regulator can change along with the intensity of an external magnetic field. By detecting the magnitude of VOUT, the strength of an external magnetic field can be detected.
FIG. 2 is a schematic diagram of a conventional two-dimensional AMR sensor element (CN 111433620A), wherein two spiral resistors 320a,320b and two polygonal resistors 330a,330b form a Wheatstone bridge, respectively. The bridge responds to the magnetic field in the two-dimensional plane of the sensor and converts it into a differentially output electrical signal, wherein 320a,320b can produce a magneto-resistive effect on the magnetic field in any direction in the plane of the sensor, while 330a,330b can be considered as a fixed resistor.
However, this technique has the following drawbacks: (1) The two spiral magnetic resistances are separately placed, and the technological error in the production process can cause mismatch of the resistance values, so that offset is caused, that is, an output signal is generated when an external magnetic field is not applied, and the performance of the magnetic head is seriously affected. (2) The two helical magneto-resistances are placed apart, resulting in a loss of chip area and increased cost.
In view of this, there is an urgent need to design a new anisotropic magneto-resistive element so as to overcome at least some of the above-mentioned drawbacks of the existing anisotropic magneto-resistive elements.
Disclosure of Invention
The invention provides an AMR magnetic resistance structure and a Wheatstone bridge, which can improve AMR matching performance, reduce chip area and avoid interference to detection of an external magnetic field.
In order to solve the technical problems, according to one aspect of the present invention, the following technical scheme is adopted:
an AMR magnetoresistive structure, the AMR magnetoresistive structure comprising: a first resistor and a third resistor; the first resistor comprises a plurality of first semicircular magnetic resistance strips and a plurality of second semicircular magnetic resistance strips; the third resistor comprises a plurality of third semicircular magnetic resistance strips and a plurality of fourth semicircular magnetic resistance strips;
the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips have the same circle center;
the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips form a plurality of circles which are sequentially arranged and have different radius sizes;
the partial ring is formed by a first semicircular magnetic resistance strip and a third semicircular magnetic resistance strip, and the partial ring is formed by a second semicircular magnetic resistance strip and a fourth semicircular magnetic resistance strip;
the radius of each first semicircular magnetic resistance strip is different, the first semicircular magnetic resistance strips are arranged in the direction of the circle center in the order of the radius from large to small, the adjacent first semicircular magnetic resistance strips are connected end to end, and the adjacent first semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; adjacent first semicircular magnetic resistance strips are arranged at intervals of one circular ring;
the radius of each second semicircular magnetic resistance strip is different, the second semicircular magnetic resistance strips are arranged in the circumferential direction in the order from small to large in radius, the adjacent second semicircular magnetic resistance strips are connected end to end, and the adjacent second semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the innermost first semicircular magnetic resistance strip is connected with the innermost second semicircular magnetic resistance strip; adjacent second semicircular magnetic resistance strips are arranged at intervals of one circular ring;
the third semicircular magnetic resistance strips are arranged in the circle center direction in the order of the radius from large to small, the adjacent third semicircular magnetic resistance strips are connected end to end, and the adjacent third semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; adjacent third semicircular magnetic resistance strips are arranged at intervals of one circular ring;
the radius of each fourth semicircular magnetic resistance strip is different, the fourth semicircular magnetic resistance strips are arranged in the circumferential direction in the order from small to large in radius, the adjacent fourth semicircular magnetic resistance strips are connected end to end, and the adjacent fourth semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the third semicircular magnetic resistance strip at the innermost side is connected with the fourth semicircular magnetic resistance strip at the innermost side; the adjacent fourth semicircular magnetic resistance strips are arranged at intervals of one circular ring.
As one embodiment of the present invention, the AMR magnetoresistive structure further includes a second resistor, a fourth resistor;
the first end of the first resistor is connected with the power supply voltage, the second end of the first resistor is connected with the first end of the second resistor, and the second end of the second resistor is grounded;
the first end of the fourth resistor is connected with the power supply voltage, the second end of the fourth resistor is connected with the first end of the third resistor, and the second end of the third resistor is grounded.
As one embodiment of the invention, the second resistor comprises a plurality of cross-shaped magnetic resistance strips, and the cross-shaped magnetic resistance strips are connected end to end in sequence; the fourth resistor comprises a plurality of cross-shaped magnetic resistance strips, and the cross-shaped magnetic resistance strips are sequentially connected end to end.
As one embodiment of the present invention, the innermost first semicircular magnetoresistive strip is connected to the innermost second semicircular magnetoresistive strip through an L-shaped first connecting line; the innermost third semicircular magnetic resistance strip is connected with the innermost fourth semicircular magnetic resistance strip through an L-shaped second connecting wire.
As one embodiment of the present invention, the first resistor includes six first semicircular magnetoresistive strips and six second semicircular magnetoresistive strips; the third resistor comprises six third semicircular magnetic resistance strips and six fourth semicircular magnetic resistance strips;
the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips form twelve circles which are sequentially arranged and have different radius sizes.
As an embodiment of the present invention, the first resistor is centrosymmetric with the third resistor.
In one embodiment of the present invention, among the rings formed by the first semicircular magnetoresistive strips, the second semicircular magnetoresistive strips, the third semicircular magnetoresistive strips, and the fourth semicircular magnetoresistive strips, adjacent rings are arranged at intervals by an insulating mechanism.
As one embodiment of the present invention, the centers of the first semicircular magnetoresistive strips and the centers of the third semicircular magnetoresistive strips are on the same straight line, and the centers of the second semicircular magnetoresistive strips and the centers of the fourth semicircular magnetoresistive strips are on the same straight line.
As one embodiment of the present invention, each of the first semicircular magnetoresistive strips, each of the second semicircular magnetoresistive strips, each of the third semicircular magnetoresistive strips, and each of the fourth semicircular magnetoresistive strips have the same width.
According to another aspect of the invention, the following technical scheme is adopted: a wheatstone bridge comprising the AMR magnetoresistive structure described above.
The invention has the beneficial effects that: the AMR reluctance structure and the Wheatstone bridge provided by the invention can improve the matching property of AMR, reduce the chip area and avoid interference to the detection of an external magnetic field.
In a use scene of the invention, each magnetic stripe of the first resistor R1 and the third resistor R3 in the AMR magnetic resistance structure has the same width, is positioned in the same center of a circle and has the same distance, and each magnetic resistance stripe of the R1 and the R3 are mutually alternated, so that the matching of the R1 and the R3 is better due to the physical structure, and the OFFSET of two paths of signals is reduced.
Because AMR magnetic resistance structure is 360 degrees annular structures, so can detect 360 degrees arbitrary magnetic field's on the plane change, a set of AMR structure just can reach 2D's effect, has greatly reduced the chip area, reduce cost.
In addition, when the magnetic resistance is electrified, the current directions of two adjacent magnetic resistances are opposite, and magnetic fields generated by the currents can cancel each other, so that interference to detection of external magnetic fields is avoided.
Drawings
FIG. 1 is a schematic diagram of a prior art Wheatstone bridge comprised of AMR elements.
Fig. 2 is a layout of an entire wheatstone bridge of the prior art.
FIG. 3 is a schematic diagram of an AMR magnetoresistive structure according to an embodiment of the invention.
Fig. 4 is a schematic structural diagram of a second resistor and a fourth resistor according to an embodiment of the invention.
FIG. 5 is a layout of a Wheatstone bridge in accordance with an embodiment of the present invention.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
For a further understanding of the present invention, preferred embodiments of the invention are described below in conjunction with the examples, but it should be understood that these descriptions are merely intended to illustrate further features and advantages of the invention, and are not limiting of the claims of the invention.
The description of this section is intended to be illustrative of only a few exemplary embodiments and the invention is not to be limited in scope by the description of the embodiments. It is also within the scope of the description and claims of the invention to interchange some of the technical features of the embodiments with other technical features of the same or similar prior art.
"connected" in the specification includes both direct and indirect connections.
FIG. 3 is a schematic diagram illustrating an AMR magnetoresistive structure according to an embodiment of the present invention; referring to fig. 3, the AMR magnetoresistive structure includes: a first resistor R1 and a third resistor R3; the first resistor R1 comprises a plurality of first semicircular magnetic resistance strips 11 and a plurality of second semicircular magnetic resistance strips 12; the third resistor 3 includes a plurality of third semicircular magnetoresistive strips 31 and a plurality of fourth semicircular magnetoresistive strips 32.
The first semicircular magnetoresistive strips 11, the second semicircular magnetoresistive strips 12, the third semicircular magnetoresistive strips 31 and the fourth semicircular magnetoresistive strips 32 have the same center. The first semicircular magnetic resistance strips 11, the second semicircular magnetic resistance strips 12, the third semicircular magnetic resistance strips 31 and the fourth semicircular magnetic resistance strips 32 form a plurality of circles with different radius sizes which are sequentially arranged. The partial ring is formed by a first semicircular magnetoresistive strip 11 and a third semicircular magnetoresistive strip 31, and the partial ring is formed by a second semicircular magnetoresistive strip 12 and a fourth semicircular magnetoresistive strip 32.
The radius of each first semicircular magnetic resistance strip 11 is different, each first semicircular magnetic resistance strip 11 is arranged in the direction of the circle center in the order of the radius from large to small, the adjacent first semicircular magnetic resistance strips 11 are connected end to end, and the adjacent first semicircular magnetic resistance strips 11 are respectively positioned at two sides of the common circle center; adjacent first semicircular magnetoresistive strips 11 are arranged with a circular spacing.
The radius of each second semicircular magnetic resistance strip 12 is different, each second semicircular magnetic resistance strip 12 is arranged in the circumferential direction in the order from the smaller radius to the larger radius, the adjacent second semicircular magnetic resistance strips 12 are connected end to end, and the adjacent second semicircular magnetic resistance strips 12 are respectively positioned at two sides of the common center; the innermost first semicircular magnetic resistance strip is connected with the innermost second semicircular magnetic resistance strip; adjacent second semicircular magnetoresistive strips 12 are arranged with a spacing of one annular ring.
The third semicircular magnetic resistance strips 31 are different in radius, the third semicircular magnetic resistance strips 31 are arranged in the direction of the circle center in the order of the radius from large to small, the adjacent third semicircular magnetic resistance strips 31 are connected end to end, and the adjacent third semicircular magnetic resistance strips 31 are respectively positioned at two sides of the common circle center; adjacent third semicircular magnetoresistive strips 31 are arranged with a circular spacing.
The radius of each fourth semicircular magnetic resistance strip 32 is different, the fourth semicircular magnetic resistance strips 32 are arranged in the circumferential direction in the order from small to large in radius, the adjacent fourth semicircular magnetic resistance strips 32 are connected end to end, and the adjacent fourth semicircular magnetic resistance strips 32 are respectively positioned at two sides of the common center; the third semicircular magnetic resistance strip at the innermost side is connected with the fourth semicircular magnetic resistance strip at the innermost side; adjacent fourth semicircular magnetoresistive strips 32 are arranged with a circular spacing.
In an embodiment of the present invention, adjacent rings among the rings formed by the first semicircular magnetoresistive strips 11, the second semicircular magnetoresistive strips 12, the third semicircular magnetoresistive strips 31 and the fourth semicircular magnetoresistive strips 32 are spaced apart by an insulating mechanism.
In an embodiment of the present invention, the centers of the first semicircular magnetoresistive strips 11 and the third semicircular magnetoresistive strips 31 are on the same straight line, and the centers of the second semicircular magnetoresistive strips 12 and the fourth semicircular magnetoresistive strips 32 are on the same straight line. In an embodiment, the first resistor and the third resistor are centrosymmetric.
With continued reference to fig. 3, in an embodiment of the present invention, the innermost first semicircular magnetoresistive strip is connected to the innermost second semicircular magnetoresistive strip through the L-shaped first connecting line 13; the innermost third semicircular magnetoresistive strip is connected to the innermost fourth semicircular magnetoresistive strip by an L-shaped second connecting line 33.
As shown in fig. 3, in an embodiment of the present invention, the first resistor R1 includes six first semicircular magnetoresistive strips 11 and six second semicircular magnetoresistive strips 12; the third resistor R3 includes six third semicircular magnetoresistive strips 31 and six fourth semicircular magnetoresistive strips 32. The first semicircular magnetic resistance strips 11, the second semicircular magnetic resistance strips 12, the third semicircular magnetic resistance strips 31 and the fourth semicircular magnetic resistance strips 32 form twelve circles which are sequentially arranged and have different radius sizes.
Referring to fig. 3, in a usage scenario of the present invention, the first resistor R1 and the third resistor R3 are set as follows:
one end of the first resistor R1 is connected with VDD from the left side, is wound around 180 degrees anticlockwise, jumps wire inside (one turn in the middle), and is continued to be wound around 180 degrees anticlockwise; the jumper … … is continued counterclockwise around 6 semicircular arcs to the lateral end point of the lower left L-shape at the center of the figure, whereby the L-shaped wiring is connected to the next end point. Starting to wind 180 degrees of ring clockwise, and winding a jumper wire outwards (one ring apart) to continue to wind 180 degrees of ring clockwise; the jumper … … to the outer ring (one turn apart) goes continuously clockwise around 6 half-arcs to the VP under the pattern, i.e. the other port of the R1 reluctance.
One end of the third resistor R3 is connected with the VN from the right side, is wound around a 180-degree ring anticlockwise, jumps wire to the inner side (one ring in the middle), and is continued to be wound around the 180-degree ring anticlockwise; the jumper … … to the inner ring (one turn apart) goes continuously counterclockwise around 6 semicircular arcs to the lateral end point of the L shape on the upper right of the center of the figure, whereby the L-shaped wiring is connected to the next end point. Starting to wind 180 degrees of ring clockwise, and winding a jumper wire outwards (one ring apart) to continue to wind 180 degrees of ring clockwise; the jumper … … to the outer ring (one turn apart) goes continuously clockwise around 6 half-arcs to GND above the pattern, the other port of the R3 reluctance.
In an embodiment of the present invention, the AMR magnetoresistive structure further includes a second resistor R2 and a fourth resistor R4. FIG. 4 is a schematic diagram of the structure of the second resistor and the fourth resistor according to an embodiment of the invention; referring to fig. 1 and 4, a first end of the first resistor R1 is connected to a power voltage, a second end of the first resistor R1 is connected to a first end of the second resistor R2, and a second end of the second resistor R2 is grounded. The first end of the fourth resistor R4 is connected with the power supply voltage, the second end of the fourth resistor R4 is connected with the first end of the third resistor R3, and the second end of the third resistor R3 is grounded.
In an embodiment of the present invention, the second resistor R2 includes a plurality of cross-shaped magnetoresistive strips, and each cross-shaped magnetoresistive strip is connected end to end in sequence; the fourth resistor R4 comprises a plurality of cross-shaped magnetic resistance strips, and the cross-shaped magnetic resistance strips are sequentially connected end to end.
Fig. 4 discloses layout structures of a second resistor R2 and a fourth resistor R4, wherein the second resistor R2 and the fourth resistor R4 are formed by cross-shaped magnetic resistance strips, and the length of each section of magnetic resistance is very short and has no uniform magnetization direction, so that the magnetic resistance effect on an external magnetic field is very weak and can be regarded as a fixed resistor.
The invention further discloses a Wheatstone bridge, and FIG. 5 is a layout of the Wheatstone bridge in an embodiment of the invention; referring to fig. 5, the wheatstone bridge includes the AMR magnetoresistive structure described above.
FIG. 5 is a complete layout of a Wheatstone bridge of the present invention, wherein the first resistor R1 and the third resistor R3 are ring structures in the middle region, and induce 360 DEG magnetic field variation; the second resistor R2 and the fourth resistor R4 are cross-shaped folding structures at the upper left corner and the lower right corner. The above structure is designed for a specific one of the magnetoresistive structures. The circles corresponding to the magnetic resistance strips of the first resistor R1 and the third resistor R3 are concentric, and the corresponding magnetic resistance strips are completely symmetrical and are interwoven with each other. Of course, the number of turns, the width, the pitch, and the rotation angle of the first resistor R1 and the third resistor R3 may be set as needed.
In summary, the AMR reluctance structure and the Wheatstone bridge provided by the invention can improve AMR matching property, reduce chip area and avoid interference to detection of external magnetic field.
In a use scene of the invention, each magnetic stripe of the first resistor R1 and the third resistor R3 in the AMR magnetic resistance structure has the same width, is positioned in the same center of a circle and has the same distance, and each magnetic resistance stripe of the R1 and the R3 are mutually alternated, so that the matching of the R1 and the R3 is better due to the physical structure, and the OFFSET of two paths of signals is reduced.
Because AMR magnetic resistance structure is 360 degrees annular structures, so can detect 360 degrees arbitrary magnetic field's on the plane change, a set of AMR structure just can reach 2D's effect, has greatly reduced the chip area, reduce cost.
In addition, when the magnetic resistance is electrified, the current directions of two adjacent magnetic resistances are opposite, and magnetic fields generated by the currents can cancel each other, so that interference to detection of external magnetic fields is avoided.
The technical features of the above-described embodiments may be arbitrarily combined, and all possible combinations of the technical features in the above-described embodiments are not described for brevity of description, however, as long as there is no contradiction between the combinations of the technical features, they should be considered as the scope of the description.
The description and applications of the present invention herein are illustrative and are not intended to limit the scope of the invention to the embodiments described above. Effects or advantages referred to in the embodiments may not be embodied in the embodiments due to interference of various factors, and description of the effects or advantages is not intended to limit the embodiments. Variations and modifications of the embodiments disclosed herein are possible, and alternatives and equivalents of the various components of the embodiments are known to those of ordinary skill in the art. It will be clear to those skilled in the art that the present invention may be embodied in other forms, structures, arrangements, proportions, and with other assemblies, materials, and components, without departing from the spirit or essential characteristics thereof. Other variations and modifications of the embodiments disclosed herein may be made without departing from the scope and spirit of the invention.
Claims (10)
1. An AMR magnetoresistive structure, the AMR magnetoresistive structure comprising: a first resistor and a third resistor; the first resistor comprises a plurality of first semicircular magnetic resistance strips and a plurality of second semicircular magnetic resistance strips; the third resistor comprises a plurality of third semicircular magnetic resistance strips and a plurality of fourth semicircular magnetic resistance strips;
the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips have the same circle center;
the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips form a plurality of circles which are sequentially arranged and have different radius sizes;
the partial ring is formed by a first semicircular magnetic resistance strip and a third semicircular magnetic resistance strip, and the partial ring is formed by a second semicircular magnetic resistance strip and a fourth semicircular magnetic resistance strip;
the radius of each first semicircular magnetic resistance strip is different, the first semicircular magnetic resistance strips are arranged in the direction of the circle center in the order of the radius from large to small, the adjacent first semicircular magnetic resistance strips are connected end to end, and the adjacent first semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; adjacent first semicircular magnetic resistance strips are arranged at intervals of one circular ring;
the radius of each second semicircular magnetic resistance strip is different, the second semicircular magnetic resistance strips are arranged in the circumferential direction in the order from small to large in radius, the adjacent second semicircular magnetic resistance strips are connected end to end, and the adjacent second semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the innermost first semicircular magnetic resistance strip is connected with the innermost second semicircular magnetic resistance strip; adjacent second semicircular magnetic resistance strips are arranged at intervals of one circular ring;
the third semicircular magnetic resistance strips are arranged in the circle center direction in the order of the radius from large to small, the adjacent third semicircular magnetic resistance strips are connected end to end, and the adjacent third semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; adjacent third semicircular magnetic resistance strips are arranged at intervals of one circular ring;
the radius of each fourth semicircular magnetic resistance strip is different, the fourth semicircular magnetic resistance strips are arranged in the circumferential direction in the order from small to large in radius, the adjacent fourth semicircular magnetic resistance strips are connected end to end, and the adjacent fourth semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the third semicircular magnetic resistance strip at the innermost side is connected with the fourth semicircular magnetic resistance strip at the innermost side; the adjacent fourth semicircular magnetic resistance strips are arranged at intervals of one circular ring.
2. The AMR magnetoresistive structure of claim 1, wherein:
the AMR reluctance structure further comprises a second resistor and a fourth resistor;
the first end of the first resistor is connected with the power supply voltage, the second end of the first resistor is connected with the first end of the second resistor, and the second end of the second resistor is grounded;
the first end of the fourth resistor is connected with the power supply voltage, the second end of the fourth resistor is connected with the first end of the third resistor, and the second end of the third resistor is grounded.
3. The AMR magnetoresistive structure of claim 2, wherein:
the second resistor comprises a plurality of cross-shaped magnetic resistance strips, and the cross-shaped magnetic resistance strips are sequentially connected end to end; the fourth resistor comprises a plurality of cross-shaped magnetic resistance strips, and the cross-shaped magnetic resistance strips are sequentially connected end to end.
4. The AMR magnetoresistive structure of claim 1, wherein:
the innermost first semicircular magnetic resistance strip is connected with the innermost second semicircular magnetic resistance strip through an L-shaped first connecting wire; the innermost third semicircular magnetic resistance strip is connected with the innermost fourth semicircular magnetic resistance strip through an L-shaped second connecting wire.
5. The AMR magnetoresistive structure of claim 1, wherein:
the first resistor comprises six first semicircular magnetic resistance strips and six second semicircular magnetic resistance strips; the third resistor comprises six third semicircular magnetic resistance strips and six fourth semicircular magnetic resistance strips;
the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips form twelve circles which are sequentially arranged and have different radius sizes.
6. The AMR magnetoresistive structure of claim 1, wherein:
the first resistor and the third resistor are centrally symmetrical.
7. The AMR magnetoresistive structure of claim 1, wherein:
among the rings formed by the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips, adjacent rings are arranged at intervals through an insulating mechanism.
8. The AMR magnetoresistive structure of claim 1, wherein:
the centers of the first semicircular magnetic resistance strips and the third semicircular magnetic resistance strips are on the same straight line, and the centers of the second semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips are on the same straight line.
9. The AMR magnetoresistive structure of claim 1, wherein:
the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips have the same width.
10. A wheatstone bridge, characterized in that it comprises an AMR magnetoresistive structure according to any of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111067618.6A CN113933768B (en) | 2021-09-13 | 2021-09-13 | AMR reluctance structure and Wheatstone bridge |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111067618.6A CN113933768B (en) | 2021-09-13 | 2021-09-13 | AMR reluctance structure and Wheatstone bridge |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113933768A CN113933768A (en) | 2022-01-14 |
| CN113933768B true CN113933768B (en) | 2024-01-30 |
Family
ID=79275576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111067618.6A Active CN113933768B (en) | 2021-09-13 | 2021-09-13 | AMR reluctance structure and Wheatstone bridge |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113933768B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116699482A (en) * | 2023-08-08 | 2023-09-05 | 北京智芯微电子科技有限公司 | Magnetic sensor and anti-fraudulent use electric energy meter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110531286A (en) * | 2019-07-26 | 2019-12-03 | 西安交通大学 | A kind of AMR sensor and preparation method thereof of anti-high-intensity magnetic field interference |
| CN110662978A (en) * | 2017-06-26 | 2020-01-07 | 德州仪器公司 | Tilt segmented anisotropic magnetoresistive angle sensor |
| CN110914697A (en) * | 2017-07-21 | 2020-03-24 | 德克萨斯仪器股份有限公司 | Anisotropic Magnetoresistive (AMR) angle sensor |
| CN111065882A (en) * | 2017-07-17 | 2020-04-24 | 德克萨斯仪器股份有限公司 | Anisotropic Magnetoresistive (AMR) angle sensor die with AMR angle sensor |
-
2021
- 2021-09-13 CN CN202111067618.6A patent/CN113933768B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110662978A (en) * | 2017-06-26 | 2020-01-07 | 德州仪器公司 | Tilt segmented anisotropic magnetoresistive angle sensor |
| CN111065882A (en) * | 2017-07-17 | 2020-04-24 | 德克萨斯仪器股份有限公司 | Anisotropic Magnetoresistive (AMR) angle sensor die with AMR angle sensor |
| CN110914697A (en) * | 2017-07-21 | 2020-03-24 | 德克萨斯仪器股份有限公司 | Anisotropic Magnetoresistive (AMR) angle sensor |
| CN110531286A (en) * | 2019-07-26 | 2019-12-03 | 西安交通大学 | A kind of AMR sensor and preparation method thereof of anti-high-intensity magnetic field interference |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113933768A (en) | 2022-01-14 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US7876091B2 (en) | Magnetic encoder | |
| EP2284555B1 (en) | Magnetic sensor including a bridge circuit | |
| US9915706B2 (en) | Magnetic sensor | |
| CN105783684B (en) | Magnetic Sensor comprising the electric resistance array containing multiple resistive element portions | |
| US10281532B2 (en) | Magnetic sensor | |
| US9891293B2 (en) | Magnetic sensor device preventing concentration of magnetic fluxes to a magnetic sensing element | |
| CN101995558A (en) | Magnetic sensor | |
| US20140292313A1 (en) | Magnetic sensor system including three detection circuits | |
| CN113933768B (en) | AMR reluctance structure and Wheatstone bridge | |
| US20140292314A1 (en) | Magnetic sensor system including two detection circuits | |
| JP6853277B2 (en) | Magnetically balanced current sensor and its manufacturing method | |
| US11022632B2 (en) | Electric current sensor | |
| CN205861754U (en) | A kind of anisotropic magnetoresistance current sensor without set and resetting means | |
| CN114236436B (en) | AMR magnetic resistance structure | |
| CN219108134U (en) | Anisotropic magneto-resistive element and wheatstone bridge | |
| JP3609645B2 (en) | Rotation detection sensor | |
| CN205246739U (en) | Current sensor | |
| JP2014202704A (en) | Magnetic field detection device | |
| JP6127271B2 (en) | Giant magnetoresistive element | |
| WO2015124976A1 (en) | Electric current measurement device | |
| JPWO2016013347A1 (en) | Magnetic sensor | |
| US11719772B2 (en) | AMR (XMR) sensor with increased linear range | |
| WO2013042336A1 (en) | Magnetic sensor | |
| JP3016468B2 (en) | Magnetoelectric converter | |
| JPS61711A (en) | Magnetic head |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |