CN113933768A - AMR magnetoresistive structure and Wheatstone bridge - Google Patents
AMR magnetoresistive structure and Wheatstone bridge Download PDFInfo
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Abstract
The invention discloses an AMR (adaptive multi-rate) magnetoresistive structure and a Wheatstone bridge, wherein the AMR magnetoresistive structure comprises: a first resistor and a third resistor; the first resistor comprises a plurality of first semicircular magnetic resistance strips and a plurality of second semicircular magnetic resistance strips; the third resistor comprises a plurality of third semicircular magnetic resistance strips and a plurality of fourth semicircular magnetic resistance strips; each first semicircular magnetic resistance strip, each second semicircular magnetic resistance strip, each third semicircular magnetic resistance strip and each fourth semicircular magnetic resistance strip have the same circle center; each first semicircular magnetic resistance strip, each second semicircular magnetic resistance strip, each third semicircular magnetic resistance strip and each fourth semicircular magnetic resistance strip form a plurality of circular rings which are arranged in sequence and have different radiuses. The AMR magnetoresistive structure and the Wheatstone bridge provided by the invention can improve the matching performance of the AMR, reduce the area of a chip and simultaneously avoid the interference on the detection of an external magnetic field.
Description
Technical Field
The invention belongs to the technical field of microelectronics, relates to a magnetoresistive element, and particularly relates to an AMR magnetoresistive structure and a Wheatstone bridge.
Background
Anisotropic magnetoresistive elements (AMR) are important magnetic sensor elements for detecting magnetic fields. It is widely used in automobile, industrial control, household electrical appliance and communication equipment for detecting speed, angle, position and other information. AMR has excellent characteristics of low power consumption, high sensitivity, and the like, compared to conventional hall effect elements. The structure of AMR itself can have a significant impact on output amplitude and OFFSET.
FIG. 1 shows a Wheatstone bridge consisting of 4 AMR elements. The working principle of the device is that after a certain voltage VDD is loaded, the differential voltage output VOUT of the device is equal to VP-VN and can change along with the intensity of an external magnetic field. By detecting the magnitude of VOUT, the strength of an external magnetic field can be detected.
Fig. 2 is a schematic diagram of a conventional two-dimensional AMR sensor element (CN111433620A), which is a wheatstone bridge formed by two spiral resistors 320a,320b and two polygonal resistors 330a,330b, respectively. 320a,320b can produce a magneto-resistive effect on a magnetic field in any direction in the plane of the sensor, and 330a,330b can be regarded as a fixed resistor, so that the bridge can respond to the magnetic field in the two-dimensional plane of the sensor and convert the magnetic field into an electrical signal of differential output.
However, this technique has the following drawbacks: (1) the two spiral magnetic resistances are separately arranged, and the resistance values can be mismatched due to process errors in the production process, so that offset is caused, namely, an output signal can be generated when no external magnetic field exists, and the performance of the magnetic head is seriously influenced. (2) The two spiral magnetoresistors are separately placed, resulting in a loss of chip area and increased cost.
In view of the above, there is a need to design a new anisotropic magnetoresistive element so as to overcome at least some of the above-mentioned disadvantages of the existing anisotropic magnetoresistive element.
Disclosure of Invention
The invention provides an AMR (adaptive multi-rate) magnetoresistive structure and a Wheatstone bridge, which can improve the matching of AMR, reduce the area of a chip and simultaneously avoid the interference on the detection of an external magnetic field.
In order to solve the technical problem, according to one aspect of the present invention, the following technical solutions are adopted:
an AMR magnetoresistive structure, the AMR magnetoresistive structure comprising: a first resistor and a third resistor; the first resistor comprises a plurality of first semicircular magnetic resistance strips and a plurality of second semicircular magnetic resistance strips; the third resistor comprises a plurality of third semicircular magnetic resistance strips and a plurality of fourth semicircular magnetic resistance strips;
each first semicircular magnetic resistance strip, each second semicircular magnetic resistance strip, each third semicircular magnetic resistance strip and each fourth semicircular magnetic resistance strip have the same circle center;
each first semicircular magnetic resistance strip, each second semicircular magnetic resistance strip, each third semicircular magnetic resistance strip and each fourth semicircular magnetic resistance strip form a plurality of sequentially arranged circular rings with different radiuses;
the partial circular ring is formed by a first semicircular magnetic resistance strip and a third semicircular magnetic resistance strip, and the partial circular ring is formed by a second semicircular magnetic resistance strip and a fourth semicircular magnetic resistance strip;
the radius of each first semicircular magnetic resistance strip is different, the first semicircular magnetic resistance strips are arranged towards the direction of the circle center in the order of the radius from large to small, the adjacent first semicircular magnetic resistance strips are connected end to end, and the adjacent first semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the adjacent first semicircular magnetic resistance strips are arranged at intervals of a circular ring;
the radius of each second semicircular magnetic resistance strip is different, the second semicircular magnetic resistance strips are arranged in the circumferential direction from small radius to large radius, adjacent second semicircular magnetic resistance strips are connected end to end, and the adjacent second semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the innermost first semicircular magnetic resistance strip is connected with the innermost second semicircular magnetic resistance strip; the adjacent second semicircular magnetic resistance strips are arranged in a circular ring at intervals;
the radius of each third semicircular magnetic resistance strip is different, each third semicircular magnetic resistance strip is arranged towards the direction of the circle center in the order of the radius from large to small, the adjacent third semicircular magnetic resistance strips are connected end to end, and the adjacent third semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the adjacent third semicircular magnetic resistance strips are arranged in a circular ring at intervals;
the radius of each fourth semicircular magnetic resistance strip is different, the fourth semicircular magnetic resistance strips are arranged in the circumferential direction from small radius to large radius, adjacent fourth semicircular magnetic resistance strips are connected end to end, and the adjacent fourth semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the innermost third semicircular magnetic resistance strip is connected with the innermost fourth semicircular magnetic resistance strip; and the adjacent fourth semicircular magnetic resistance strips are arranged at intervals of a circular ring.
As an embodiment of the present invention, the AMR magnetoresistive structure further comprises a second resistor, a fourth resistor;
the first end of the first resistor is connected with a power supply voltage, the second end of the first resistor is connected with the first end of the second resistor, and the second end of the second resistor is grounded;
the first end of the fourth resistor is connected with the power supply voltage, the second end of the fourth resistor is connected with the first end of the third resistor, and the second end of the third resistor is grounded.
As an implementation manner of the invention, the second resistor comprises a plurality of cross-shaped magnetic resistance strips, and the cross-shaped magnetic resistance strips are connected end to end in sequence; the fourth resistor comprises a plurality of cross-shaped magnetic resistance strips, and the cross-shaped magnetic resistance strips are sequentially connected end to end.
As an embodiment of the present invention, the innermost first semicircular magnetic resistance strip is connected to the innermost second semicircular magnetic resistance strip through an L-shaped first connecting line; the innermost third semicircular ring magnetic resistance strip is connected with the innermost fourth semicircular ring magnetic resistance strip through an L-shaped second connecting line.
As an embodiment of the present invention, the first resistor includes six first semicircular magnetoresistive strips and six second semicircular magnetoresistive strips; the third resistor comprises six third semicircular magnetic resistance strips and six fourth semicircular magnetic resistance strips;
each first semicircular magnetic resistance strip, each second semicircular magnetic resistance strip, each third semicircular magnetic resistance strip and each fourth semicircular magnetic resistance strip form twelve circular rings which are arranged in sequence and have different radiuses.
In one embodiment of the present invention, the first resistor and the third resistor are symmetric with respect to each other.
In one embodiment of the present invention, among the rings formed by the first semicircular magnetoresistive strips, the second semicircular magnetoresistive strips, the third semicircular magnetoresistive strips and the fourth semicircular magnetoresistive strips, adjacent rings are spaced apart from each other by an insulating mechanism.
In one embodiment of the present invention, the centers of the first semicircular magnetoresistive strips and the centers of the third semicircular magnetoresistive strips are on the same straight line, and the centers of the second semicircular magnetoresistive strips and the centers of the fourth semicircular magnetoresistive strips are on the same straight line.
In one embodiment of the present invention, each of the first semicircular magnetoresistive strips, each of the second semicircular magnetoresistive strips, each of the third semicircular magnetoresistive strips, and each of the fourth semicircular magnetoresistive strips have the same width.
According to another aspect of the invention, the following technical scheme is adopted: a wheatstone bridge comprising an AMR magnetoresistive structure as described above.
The invention has the beneficial effects that: the AMR magnetoresistive structure and the Wheatstone bridge provided by the invention can improve the matching performance of the AMR, reduce the area of a chip and simultaneously avoid the interference on the detection of an external magnetic field.
In a use scenario of the invention, each magnetic stripe of the first resistor R1 and the third resistor R3 in the AMR magnetoresistive structure has the same width, is located in the same circle center, and has the same distance, and each magnetoresistive stripe of R1 and R3 are alternated with each other, so that the physical structure can make the matching performance of R1 and R3 better, and reduce the OFFSET of two signals.
Because the AMR magnetoresistive structure is a 360-degree annular structure, the change of 360-degree arbitrary magnetic fields on a plane can be detected, a group of AMR magnetoresistive structures can achieve the 2D effect, the chip area is greatly reduced, and the cost is reduced.
In addition, when the magnetic resistances are electrified, the current directions of two adjacent magnetic resistances are opposite, magnetic fields generated by the currents can be mutually offset, and interference on detection of an external magnetic field is avoided.
Drawings
Fig. 1 is a schematic diagram of a wheatstone bridge composed of AMR elements according to the prior art.
Fig. 2 is a layout of a whole wheatstone bridge in the prior art.
FIG. 3 is a schematic diagram of an AMR magnetoresistive structure according to an embodiment of the invention.
Fig. 4 is a schematic structural diagram of a second resistor and a fourth resistor according to an embodiment of the invention.
FIG. 5 is a layout of a Wheatstone bridge according to an embodiment of the present invention.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
For a further understanding of the invention, reference will now be made to the preferred embodiments of the invention by way of example, and it is to be understood that the description is intended to further illustrate features and advantages of the invention, and not to limit the scope of the claims.
The description in this section is for several exemplary embodiments only, and the present invention is not limited only to the scope of the embodiments described. It is within the scope of the present disclosure and protection that the same or similar prior art means and some features of the embodiments may be interchanged.
The term "connected" in the specification includes both direct connection and indirect connection.
The present invention discloses an AMR magnetoresistive structure, fig. 3 is a schematic structural diagram of the AMR magnetoresistive structure according to an embodiment of the present invention; referring to fig. 3, the AMR magnetoresistive structure comprises: a first resistor R1 and a third resistor R3; the first resistor R1 comprises a plurality of first semicircular magnetoresistive strips 11 and a plurality of second semicircular magnetoresistive strips 12; the third resistor 3 comprises a plurality of third semicircular magnetic resistance strips 31 and a plurality of fourth semicircular magnetic resistance strips 32.
Each first semicircular magnetic resistance strip 11, each second semicircular magnetic resistance strip 12, each third semicircular magnetic resistance strip 31 and each fourth semicircular magnetic resistance strip 32 have the same circle center. Each first semicircular magnetic resistance strip 11, each second semicircular magnetic resistance strip 12, each third semicircular magnetic resistance strip 31 and each fourth semicircular magnetic resistance strip 32 form a plurality of sequentially arranged circular rings with different radiuses. The partial ring is formed by a first semicircular magnetic resistance strip 11 and a third semicircular magnetic resistance strip 31, and the partial ring is formed by a second semicircular magnetic resistance strip 12 and a fourth semicircular magnetic resistance strip 32.
The radius of each first semicircular magnetic resistance strip 11 is different, each first semicircular magnetic resistance strip 11 is arranged towards the direction of the center of a circle in the order of the radius from large to small, the adjacent first semicircular magnetic resistance strips 11 are connected end to end, and the adjacent first semicircular magnetic resistance strips 11 are respectively positioned at two sides of the common center of a circle; the adjacent first semi-circular magnetoresistive strips 11 are arranged by one circular ring.
The radius of each second semicircular magnetic resistance strip 12 is different, each second semicircular magnetic resistance strip 12 is arranged in the circumferential direction from small radius to large radius, adjacent second semicircular magnetic resistance strips 12 are connected end to end, and the adjacent second semicircular magnetic resistance strips 12 are respectively positioned at two sides of the common circle center; the innermost first semicircular magnetic resistance strip is connected with the innermost second semicircular magnetic resistance strip; adjacent second semi-circular magnetoresistive strips 12 are arranged one circular ring apart.
The radius of each third semicircular magnetic resistance strip 31 is different, each third semicircular magnetic resistance strip 31 is arranged in the circle center direction from the radius from large to small, the adjacent third semicircular magnetic resistance strips 31 are connected end to end, and the adjacent third semicircular magnetic resistance strips 31 are respectively positioned at two sides of the common circle center; the adjacent third semicircular magnetic resistance strips 31 are arranged at intervals of a circle.
The radius of each fourth semicircular magnetic resistance strip 32 is different, the fourth semicircular magnetic resistance strips 32 are arranged in the circumferential direction from small radius to large radius, the adjacent fourth semicircular magnetic resistance strips 32 are connected end to end, and the adjacent fourth semicircular magnetic resistance strips 32 are respectively positioned at two sides of the common circle center; the innermost third semicircular magnetic resistance strip is connected with the innermost fourth semicircular magnetic resistance strip; the adjacent fourth semicircular magnetic resistance strips 32 are arranged in a circular ring at intervals.
In an embodiment of the invention, among the circular rings formed by the first semicircular magnetoresistive strips 11, the second semicircular magnetoresistive strips 12, the third semicircular magnetoresistive strips 31 and the fourth semicircular magnetoresistive strips 32, adjacent circular rings are arranged at intervals by an insulating mechanism.
In an embodiment of the invention, the centers of the first semicircular magnetoresistive strips 11 and the third semicircular magnetoresistive strips 31 are on the same straight line, and the centers of the second semicircular magnetoresistive strips 12 and the fourth semicircular magnetoresistive strips 32 are on the same straight line. In one embodiment, the first resistor and the third resistor are centrosymmetric.
Referring to fig. 3, in an embodiment of the invention, the innermost first semicircular magnetoresistive strip is connected to the innermost second semicircular magnetoresistive strip through the L-shaped first connecting line 13; the innermost third semicircular magnetic resistance strip is connected with the innermost fourth semicircular magnetic resistance strip through an L-shaped second connecting line 33.
As shown in fig. 3, in an embodiment of the present invention, the first resistor R1 includes six first semicircular magnetoresistive strips 11, six second semicircular magnetoresistive strips 12; the third resistor R3 includes six third semicircular magnetoresistive strips 31 and six fourth semicircular magnetoresistive strips 32. Each first semicircular magnetic resistance strip 11, each second semicircular magnetic resistance strip 12, each third semicircular magnetic resistance strip 31 and each fourth semicircular magnetic resistance strip 32 form twelve circular rings which are arranged in sequence and have different radiuses.
Referring to fig. 3, in a usage scenario of the present invention, the first resistor R1 and the third resistor R3 are arranged as follows:
one end of the magnetic resistance of the first resistor R1 is connected to VDD from the left side, winds around the 180-degree ring anticlockwise, jumps towards the inner ring (with one circle in between) and continues to wind around the 180-degree ring anticlockwise; the inner circle (one turn at a distance) is jumped … …, and the transverse end point of the L shape is reached by continuously winding 6 semi-circular arcs anticlockwise to the left lower L shape of the center of the graph, so that the L shape connecting line is connected to the next end point. Starting to clockwise wind the 180-degree ring, jumping wires to the outer ring (the middle is separated by one circle), and continuing to clockwise wind the 180-degree ring; the jumper … … continuously clockwise winds 6 semi-circular arcs to reach the VP below the graph, namely the other port of the R1 magnetic resistance.
One end of the reluctance of the third resistor R3 is connected to VN from the right side, winds around the 180-degree ring anticlockwise, jumps towards the inner ring (with one circle in between) and continues to wind around the 180-degree ring anticlockwise; the jumper … … continuously winds 6 semicircular arcs counterclockwise to the inner circle (every other circle) to reach the transverse end point of the L shape near the upper right of the center of the figure, and the L-shaped connecting line is connected to the next end point. Starting to clockwise wind the 180-degree ring, jumping wires to the outer ring (the middle is separated by one circle), and continuing to clockwise wind the 180-degree ring; the jumper … … continuously and clockwise turns 6 semi-circular arcs to the GND above the figure, namely the other port of the R3 magnetic resistance.
In an embodiment of the present invention, the AMR magnetoresistive structure further comprises a second resistor R2 and a fourth resistor R4. FIG. 4 is a schematic structural diagram of a second resistor and a fourth resistor according to an embodiment of the present invention; referring to fig. 1 and 4, a first terminal of the first resistor R1 is connected to a power voltage, a second terminal of the first resistor R1 is connected to a first terminal of the second resistor R2, and a second terminal of the second resistor R2 is grounded. The first end of the fourth resistor R4 is connected with a power supply voltage, the second end of the fourth resistor R4 is connected with the first end of the third resistor R3, and the second end of the third resistor R3 is grounded.
In an embodiment of the present invention, the second resistor R2 includes a plurality of cross-shaped magnetoresistive strips, and the cross-shaped magnetoresistive strips are connected end to end in sequence; fourth resistance R4 includes a plurality of cross magnetic resistance strip, and each cross magnetic resistance strip end to end connects gradually.
Fig. 4 reveals layout structures of the second resistor R2 and the fourth resistor R4, the second resistor R2 and the fourth resistor R4 are formed by cross-shaped magnetoresistive strips, the length of each segment of the magnetoresistive strip is short, and the magnetoresistive strip has no uniform magnetization direction, so that the magnetoresistive effect on an external magnetic field is weak, and the magnetoresistive strip can be regarded as a fixed resistor.
The invention further discloses a Wheatstone bridge, and FIG. 5 is a layout of the Wheatstone bridge according to an embodiment of the invention; referring to FIG. 5, the Wheatstone bridge includes the AMR magnetoresistive structures described above.
FIG. 5 is a complete layout of the Wheatstone bridge of the invention, wherein the first resistor R1 and the third resistor R3 are ring-shaped structures in the middle region, and induce 360 DEG magnetic field variation; the second resistor R2 and the fourth resistor R4 are in a cross-shaped folding structure with the upper left corner and the lower right corner. The structure is designed for a particular one of the magnetoresistive structures. The circles corresponding to the magnetoresistive strips of the first resistor R1 and the third resistor R3 are concentric, and the corresponding magnetoresistive strips are completely symmetrical and are mutually interwoven. Of course, the number of turns, the width, the spacing and the rotation angle of the first resistor R1 and the third resistor R3 can be set as required.
In summary, the AMR magnetoresistance structure and the wheatstone bridge according to the present invention can improve the matching of the AMR, reduce the chip area, and simultaneously avoid the interference to the detection of the external magnetic field.
In a use scenario of the invention, each magnetic stripe of the first resistor R1 and the third resistor R3 in the AMR magnetoresistive structure has the same width, is located in the same circle center, and has the same distance, and each magnetoresistive stripe of R1 and R3 are alternated with each other, so that the physical structure can make the matching performance of R1 and R3 better, and reduce the OFFSET of two signals.
Because the AMR magnetoresistive structure is a 360-degree annular structure, the change of 360-degree arbitrary magnetic fields on a plane can be detected, a group of AMR magnetoresistive structures can achieve the 2D effect, the chip area is greatly reduced, and the cost is reduced.
In addition, when the magnetic resistances are electrified, the current directions of two adjacent magnetic resistances are opposite, magnetic fields generated by the currents can be mutually offset, and interference on detection of an external magnetic field is avoided.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The description and applications of the invention herein are illustrative and are not intended to limit the scope of the invention to the embodiments described above. Effects or advantages referred to in the embodiments may not be reflected in the embodiments due to interference of various factors, and the description of the effects or advantages is not intended to limit the embodiments. Variations and modifications of the embodiments disclosed herein are possible, and alternative and equivalent various components of the embodiments will be apparent to those skilled in the art. It will be clear to those skilled in the art that the present invention may be embodied in other forms, structures, arrangements, proportions, and with other components, materials, and parts, without departing from the spirit or essential characteristics thereof. Other variations and modifications of the embodiments disclosed herein may be made without departing from the scope and spirit of the invention.
Claims (10)
1. An AMR magnetoresistive structure, comprising: a first resistor and a third resistor; the first resistor comprises a plurality of first semicircular magnetic resistance strips and a plurality of second semicircular magnetic resistance strips; the third resistor comprises a plurality of third semicircular magnetic resistance strips and a plurality of fourth semicircular magnetic resistance strips;
each first semicircular magnetic resistance strip, each second semicircular magnetic resistance strip, each third semicircular magnetic resistance strip and each fourth semicircular magnetic resistance strip have the same circle center;
each first semicircular magnetic resistance strip, each second semicircular magnetic resistance strip, each third semicircular magnetic resistance strip and each fourth semicircular magnetic resistance strip form a plurality of sequentially arranged circular rings with different radiuses;
the partial circular ring is formed by a first semicircular magnetic resistance strip and a third semicircular magnetic resistance strip, and the partial circular ring is formed by a second semicircular magnetic resistance strip and a fourth semicircular magnetic resistance strip;
the radius of each first semicircular magnetic resistance strip is different, the first semicircular magnetic resistance strips are arranged towards the direction of the circle center in the order of the radius from large to small, the adjacent first semicircular magnetic resistance strips are connected end to end, and the adjacent first semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the adjacent first semicircular magnetic resistance strips are arranged at intervals of a circular ring;
the radius of each second semicircular magnetic resistance strip is different, the second semicircular magnetic resistance strips are arranged in the circumferential direction from small radius to large radius, adjacent second semicircular magnetic resistance strips are connected end to end, and the adjacent second semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the innermost first semicircular magnetic resistance strip is connected with the innermost second semicircular magnetic resistance strip; the adjacent second semicircular magnetic resistance strips are arranged in a circular ring at intervals;
the radius of each third semicircular magnetic resistance strip is different, each third semicircular magnetic resistance strip is arranged towards the direction of the circle center in the order of the radius from large to small, the adjacent third semicircular magnetic resistance strips are connected end to end, and the adjacent third semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the adjacent third semicircular magnetic resistance strips are arranged in a circular ring at intervals;
the radius of each fourth semicircular magnetic resistance strip is different, the fourth semicircular magnetic resistance strips are arranged in the circumferential direction from small radius to large radius, adjacent fourth semicircular magnetic resistance strips are connected end to end, and the adjacent fourth semicircular magnetic resistance strips are respectively positioned at two sides of the common circle center; the innermost third semicircular magnetic resistance strip is connected with the innermost fourth semicircular magnetic resistance strip; and the adjacent fourth semicircular magnetic resistance strips are arranged at intervals of a circular ring.
2. The AMR magnetoresistive structure of claim 1, wherein:
the AMR magnetoresistive structure further comprises a second resistor and a fourth resistor;
the first end of the first resistor is connected with a power supply voltage, the second end of the first resistor is connected with the first end of the second resistor, and the second end of the second resistor is grounded;
the first end of the fourth resistor is connected with the power supply voltage, the second end of the fourth resistor is connected with the first end of the third resistor, and the second end of the third resistor is grounded.
3. The AMR magnetoresistive structure of claim 2, wherein:
the second resistor comprises a plurality of cross-shaped magnetic resistance strips, and the cross-shaped magnetic resistance strips are sequentially connected end to end; the fourth resistor comprises a plurality of cross-shaped magnetic resistance strips, and the cross-shaped magnetic resistance strips are sequentially connected end to end.
4. The AMR magnetoresistive structure of claim 1, wherein:
the innermost first semicircular magnetic resistance strip is connected with the innermost second semicircular magnetic resistance strip through an L-shaped first connecting line; the innermost third semicircular ring magnetic resistance strip is connected with the innermost fourth semicircular ring magnetic resistance strip through an L-shaped second connecting line.
5. The AMR magnetoresistive structure of claim 1, wherein:
the first resistor comprises six first semicircular magnetic resistance strips and six second semicircular magnetic resistance strips; the third resistor comprises six third semicircular magnetic resistance strips and six fourth semicircular magnetic resistance strips;
each first semicircular magnetic resistance strip, each second semicircular magnetic resistance strip, each third semicircular magnetic resistance strip and each fourth semicircular magnetic resistance strip form twelve circular rings which are arranged in sequence and have different radiuses.
6. The AMR magnetoresistive structure of claim 1, wherein:
the first resistor and the third resistor are centrosymmetric.
7. The AMR magnetoresistive structure of claim 1, wherein:
in the rings formed by the first semicircular magnetic resistance strips, the second semicircular magnetic resistance strips, the third semicircular magnetic resistance strips and the fourth semicircular magnetic resistance strips, adjacent rings are arranged at intervals through an insulating mechanism.
8. The AMR magnetoresistive structure of claim 1, wherein:
the centers of the first semicircular magnetic resistance strips and the centers of the third semicircular magnetic resistance strips are on the same straight line, and the centers of the second semicircular magnetic resistance strips and the centers of the fourth semicircular magnetic resistance strips are on the same straight line.
9. The AMR magnetoresistive structure of claim 1, wherein:
each first semicircular ring magnetic resistance strip, each second semicircular ring magnetic resistance strip, each third semicircular ring magnetic resistance strip and each fourth semicircular ring magnetic resistance strip have the same width.
10. A wheatstone bridge comprising an AMR magnetoresistive structure according to any of claims 1 to 9.
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| CN110662978A (en) * | 2017-06-26 | 2020-01-07 | 德州仪器公司 | Tilt segmented anisotropic magnetoresistive angle sensor |
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| CN110914697A (en) * | 2017-07-21 | 2020-03-24 | 德克萨斯仪器股份有限公司 | Anisotropic Magnetoresistive (AMR) angle sensor |
| CN110531286A (en) * | 2019-07-26 | 2019-12-03 | 西安交通大学 | A kind of AMR sensor and preparation method thereof of anti-high-intensity magnetic field interference |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116699482A (en) * | 2023-08-08 | 2023-09-05 | 北京智芯微电子科技有限公司 | Magnetic sensor and anti-fraudulent use electric energy meter |
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