CN113933685A - Method, apparatus, device and storage medium for detecting overheat of semiconductor circuit - Google Patents
Method, apparatus, device and storage medium for detecting overheat of semiconductor circuit Download PDFInfo
- Publication number
- CN113933685A CN113933685A CN202111154833.XA CN202111154833A CN113933685A CN 113933685 A CN113933685 A CN 113933685A CN 202111154833 A CN202111154833 A CN 202111154833A CN 113933685 A CN113933685 A CN 113933685A
- Authority
- CN
- China
- Prior art keywords
- semiconductor circuit
- thermistor
- resistance value
- power system
- internal temperature
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 89
- 238000000034 method Methods 0.000 title claims description 27
- 238000001514 detection method Methods 0.000 claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 239000002184 metal Substances 0.000 claims abstract description 24
- 238000013021 overheating Methods 0.000 claims description 11
- 238000004590 computer program Methods 0.000 claims description 10
- 230000035772 mutation Effects 0.000 abstract description 3
- 230000020169 heat generation Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 3
- 238000010168 coupling process Methods 0.000 description 3
- 238000005859 coupling reaction Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000008094 contradictory effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/28—Testing of electronic circuits, e.g. by signal tracer
- G01R31/2851—Testing of integrated circuits [IC]
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
- G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor
Abstract
The invention discloses an overheat detection method, device, equipment and storage medium of a semiconductor circuit, wherein the semiconductor circuit comprises a metal substrate, a power chip and a thermistor, heat generated by the power chip is transferred to the thermistor through the metal substrate, and the overheat detection method comprises the following steps: acquiring the resistance value of the thermistor and the fluctuation value of the thermistor within preset time; if the resistance value of the thermistor is larger than a preset threshold value, judging that the internal temperature of the semiconductor circuit is overhigh; and/or judging that the internal temperature of the semiconductor circuit is too high if the fluctuation value exceeds a preset fluctuation range. The overheat detection method of the semiconductor circuit can judge whether the temperature of the semiconductor circuit is too high according to the resistance value of the thermistor, and can judge whether the temperature of the semiconductor circuit is too high according to the fluctuation value of the resistance value of the thermistor in the preset time, so that the damage of a power device caused by temperature mutation can be avoided, and the use safety of the semiconductor circuit is ensured.
Description
Technical Field
The present invention relates to the field of power semiconductors, and in particular, to a method, an apparatus, a device, and a storage medium for detecting overheating of a semiconductor circuit.
Background
A semiconductor circuit is a power drive type product combining power electronics and integrated circuit technology, and integrates a power switching device and a high-voltage drive circuit, and incorporates a fault detection circuit such as overvoltage, overcurrent, and overheat.
In general, some semiconductor circuits do not have thermistors and do not have corresponding sampling control functions. Some schemes have a thermistor placed inside, and can transfer heat generated by the power chip through the substrate and the plastic package material, so as to change the resistance value of the power chip. The internal driving chip or the external MCU detects the resistance value of the thermistor through the pin, and judges whether the temperature of the semiconductor circuit is too high or not through software comparison operation.
However, in some abnormal situations, the temperature rise does not increase slowly, but there is a sudden jump. For example, a load is short-circuited, an input voltage is abnormal, and the like, which causes a rapid temperature rise of the power device, if the measurement is made by monitoring the absolute temperature detected by the thermistor at this time, because the temperature conduction time difference exists, the power device may be damaged before the thermistor reaches the upper temperature limit.
Disclosure of Invention
The invention mainly aims to provide an overheat detection method of a semiconductor circuit, aiming at solving the technical problem that the conventional overheat detection method of the semiconductor circuit can cause damage to a power device.
In order to achieve the above object, the present invention provides an overheat detection method for a semiconductor circuit, the semiconductor circuit including a metal substrate, a power chip and a thermistor, the power chip and the thermistor being respectively disposed on the metal substrate and electrically connected thereto, heat generated by the power chip being transferred to the thermistor through the metal substrate, the overheat detection method for a semiconductor circuit including:
acquiring the resistance value of the thermistor and the fluctuation value of the thermistor within preset time;
if the resistance value of the thermistor is larger than a preset threshold value, judging that the internal temperature of the semiconductor circuit is too high; and/or the presence of a gas in the gas,
and if the fluctuation value exceeds a preset fluctuation range, judging that the internal temperature of the semiconductor circuit is overhigh.
Preferably, when it is judged that the internal temperature of the semiconductor circuit is excessively high, the overheat detection method of the semiconductor circuit further includes:
and controlling the semiconductor circuit to reduce the frequency.
Preferably, when it is judged that the internal temperature of the semiconductor circuit is excessively high, the overheat detection method of the semiconductor circuit further includes:
controlling the semiconductor circuit to reduce current.
Preferably, when it is judged that the internal temperature of the semiconductor circuit is excessively high, the overheat detection method of the semiconductor circuit further includes:
controlling the semiconductor circuit to be turned off.
The invention also provides an overheat detection device of a semiconductor circuit, wherein the semiconductor circuit comprises a metal substrate, a power chip and a thermistor, the power chip and the thermistor are respectively arranged on the metal substrate and electrically connected with the metal substrate, heat generated by the power chip is transferred to the thermistor through the metal substrate, and the overheat detection device of the semiconductor circuit comprises:
the data acquisition module is used for acquiring the resistance value of the thermistor and the fluctuation value of the thermistor within preset time;
the first judgment module is used for judging that the internal temperature of the semiconductor circuit is overhigh if the resistance value of the thermistor is larger than a preset threshold value; and/or the presence of a gas in the gas,
and the second judgment module is used for judging that the internal temperature of the semiconductor circuit is overhigh if the fluctuation value exceeds a preset fluctuation range.
Preferably, the overheat detection apparatus of a semiconductor circuit further includes:
the first control module is used for controlling the semiconductor circuit to reduce the frequency.
Preferably, the overheat detection apparatus of a semiconductor circuit further includes:
and the second control module is used for controlling the semiconductor circuit to reduce the current.
Preferably, the overheat detection apparatus of a semiconductor circuit further includes:
and the third control module is used for controlling the semiconductor circuit to be turned off.
The present invention further provides an overheat detection apparatus of a semiconductor circuit, the overheat detection apparatus of the semiconductor circuit comprising:
a memory for storing a computer program;
a processor for implementing the method for detecting overheating of a semiconductor circuit described above when executing the computer program, the method for detecting overheating of a semiconductor circuit comprising at least the steps of:
acquiring the resistance value of the thermistor and the fluctuation value of the thermistor within preset time;
if the resistance value of the thermistor is larger than a preset threshold value, judging that the internal temperature of the semiconductor circuit is too high; and/or the presence of a gas in the gas,
and if the fluctuation value exceeds a preset fluctuation range, judging that the internal temperature of the semiconductor circuit is overhigh.
The present invention further provides a storage medium storing a computer program which, when executed by a processor, implements the method for detecting overheating of a semiconductor circuit described above, the method for detecting overheating of a semiconductor circuit including at least the steps of:
acquiring the resistance value of the thermistor and the fluctuation value of the thermistor within preset time;
if the resistance value of the thermistor is larger than a preset threshold value, judging that the internal temperature of the semiconductor circuit is too high; and/or the presence of a gas in the gas,
and if the fluctuation value exceeds a preset fluctuation range, judging that the internal temperature of the semiconductor circuit is overhigh.
Compared with the prior art, the embodiment of the invention has the beneficial technical effects that:
the overheat detection method of the semiconductor circuit can judge whether the temperature of the semiconductor circuit is too high according to the resistance value of the thermistor, and can judge whether the temperature of the semiconductor circuit is too high according to the fluctuation value of the resistance value of the thermistor in the preset time, so that the damage of a power device caused by temperature mutation can be avoided, and the use safety of the semiconductor circuit is ensured.
Drawings
FIG. 1 is a flow chart of a method for detecting overheating of a semiconductor circuit according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a semiconductor circuit according to an embodiment of the present invention;
FIG. 3 is a functional block diagram of an overheat detection apparatus for a semiconductor circuit according to an embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be illustrative of the present invention and should not be construed as limiting the present invention, and all other embodiments that can be obtained by one skilled in the art based on the embodiments of the present invention without inventive efforts shall fall within the scope of protection of the present invention.
It will be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The semiconductor circuit provided by the invention is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc. In the following embodiments of the present invention, collectively referred to as a Modular Intelligent Power System (MIPS).
Example one
Referring to fig. 1-2, an embodiment of the present invention provides an overheat detection method for a modular intelligent power system, where the overheat detection method for the modular intelligent power system includes the following steps:
s10, acquiring the resistance value of the thermistor and the fluctuation value of the thermistor in a preset time;
s20, if the resistance value of the thermistor is larger than the preset threshold value, judging that the internal temperature of the semiconductor circuit is too high; and/or the presence of a gas in the gas,
and S30, if the fluctuation value exceeds the preset fluctuation range, judging that the internal temperature of the semiconductor circuit is too high.
In this embodiment, the modular smart power system includes a metal substrate 10, a power chip 20 and a thermistor 30, wherein the power chip 20 and the thermistor 30 are respectively disposed on the metal substrate 10 and electrically connected thereto, and heat generated by the power chip 20 is transferred to the thermistor 30 through the metal substrate 10.
Preferably, the thermistor 30 proposed in the present embodiment may be disposed at a position close to the power chip 20, so that the heat generated by the power chip 20 can be timely conducted to the thermistor 30, the resistance value of the thermistor 30 is timely changed, and the detection accuracy of the thermistor 30 is improved.
Further, the modular smart power system provided in this embodiment is generally provided with a plurality of power chips 20, in order to enable the modular smart power system to accurately detect the temperature of each power chip 20, a plurality of thermistors 30 may be correspondingly disposed on the metal substrate 10, the plurality of thermistors 30 correspond to the plurality of power chips 20 one by one, and each thermistor 30 is disposed at a position close to the corresponding power chip 20.
Furthermore, the resistance of the thermistor 30 provided in this embodiment can be detected by an internal IC of the modular smart power system, and can also be detected by an external MCU of the modular smart power system, and those skilled in the art can design the resistance according to actual situations. If the detection is performed by the external MCU of the modular smart power system, the MCU needs to be electrically connected to the thermistor 30 through a pin of the modular smart power system.
When the modular intelligent power system is in use, the power chip 20 will generate heat continuously, the generated heat will be transferred to the thermistor 30 through the metal substrate 10, and the resistance value of the thermistor 30 will be changed accordingly. The resistance value of the thermistor 30 can be detected by an internal IC or an external MCU of the modular intelligent power system, and after the resistance value of the thermistor 30 is detected, the internal IC or the external MCU of the modular intelligent power system can determine the magnitude of the resistance value and a preset threshold value accordingly. If the resistance value of the thermistor 30 is greater than the preset threshold value, it indicates that the internal temperature of the modular intelligent power system is too high and exceeds the safe temperature, and the modular intelligent power system needs to be controlled to perform over-temperature protection. On the contrary, if the resistance value of the thermistor 30 is smaller than the preset threshold, it indicates that the internal temperature of the semiconductor is normal and does not exceed the safe temperature, and there is no need to perform over-temperature protection on the modular intelligent power system.
The thermistor 30 is divided into a positive temperature coefficient thermistor 30 and a negative temperature coefficient thermistor 30, the positive temperature coefficient thermistor 30, that is, the temperature, is in direct proportion to the resistance value, the temperature rises, the resistance value of the thermistor 30 increases, the negative temperature coefficient thermistor 30, that is, the temperature, is in inverse proportion to the resistance value, the temperature rises, and the resistance value of the thermistor 30 decreases. The thermistor 30 of the present embodiment is preferably a negative temperature coefficient thermistor 30, which is only exemplary and not limiting, and can be designed by those skilled in the art according to the actual situation.
When the resistance value of the thermistor 30 is obtained, the fluctuation value of the resistance value of the thermistor 30 within the preset time is obtained at the same time, so that whether the temperature mutation exists in the modular intelligent power system or not is judged. Specifically, the built-in IC or the external MCU of the modular intelligent power system may obtain a fluctuation value of the resistance value of the thermistor 30 within a preset time, after obtaining the fluctuation value, compare the fluctuation value with a preset fluctuation range, if the fluctuation value is within the preset fluctuation range, it indicates that the modular intelligent power system does not have a temperature sudden change, otherwise, it indicates that the modular intelligent power system has a temperature sudden change, and it is necessary to control the modular intelligent power system to perform over-temperature protection.
More specifically, assuming that the preset fluctuation range of the resistance value of the thermistor 30 is 5-10 ohms/minute, and the temperature fluctuation range of the thermistor 30 is 5-10 degrees celsius/minute, if the built-in IC or the external MCU of the modular intelligent power system detects that the change value of the resistance value of the thermistor 30 in one minute is 7, it indicates that the modular intelligent power system does not have a temperature sudden change, and if the built-in IC or the external MCU of the modular intelligent power system detects that the change value of the resistance value of the thermistor 30 in one minute is 15, it indicates that the modular intelligent power system has a temperature sudden change, and it is necessary to control the modular intelligent power system to perform over-temperature protection.
Example two
The overheat detection method of the modular intelligent power system provided by the embodiment of the invention further comprises the following steps:
and controlling the modularized intelligent power system to reduce the frequency. In this embodiment, when the condition that the temperature of the modular intelligent power system is too high and/or suddenly changes is determined according to the resistance value of the thermistor 30 and/or the fluctuation value of the resistance value of the thermistor 30 within the preset time, the built-in IC or the external MCU of the modular intelligent power system controls the frequency of the modular intelligent power system to be reduced, so as to reduce the heat generation of the power chip 20 of the modular intelligent power system.
EXAMPLE III
The overheat detection method of the modular intelligent power system provided by the embodiment of the invention further comprises the following steps:
and controlling the modular intelligent power system to reduce the current. In this embodiment, when the situation that the temperature of the modular intelligent power system is too high and/or sudden temperature change exists is determined according to the resistance value of the thermistor 30 and/or the fluctuation value of the resistance value of the thermistor 30 within the preset time, the built-in IC or the external MCU of the modular intelligent power system controls the modular intelligent power system to reduce the current, so as to reduce the heat generation of the power chip 20 of the modular intelligent power system.
Example four
The overheat detection method of the modular intelligent power system provided by the embodiment of the invention further comprises the following steps:
and controlling the modularized intelligent power system to be switched off. In this embodiment, when the situation that the temperature of the modular intelligent power system is too high and/or suddenly changes in temperature is determined according to the resistance value of the thermistor 30 and/or the fluctuation value of the resistance value of the thermistor 30 within the preset time, the built-in IC or the external MCU of the modular intelligent power system controls the modular intelligent power system to be turned off, so that the power chip 20 of the modular intelligent power system stops heating.
EXAMPLE five
Referring to fig. 3, based on the aforementioned method for detecting an overcurrent in a modular intelligent power system, an embodiment of the present invention further provides an overcurrent detecting apparatus for a modular intelligent power system, where the overcurrent detecting apparatus for a modular intelligent power system includes:
a data acquisition module 100, configured to acquire a resistance value of the thermistor 30 and a fluctuation value thereof within a preset time;
the first judging module 200 is configured to judge that the internal temperature of the modular intelligent power system is too high if the resistance value of the thermistor 30 is greater than a preset threshold; and/or the presence of a gas in the gas,
and the second judging module 300 is configured to judge that the internal temperature of the modular intelligent power system is too high if the fluctuation value exceeds a preset fluctuation range.
In this embodiment, the modular smart power system includes a metal substrate 10, a power chip 20 and a thermistor 30, wherein the power chip 20 and the thermistor 30 are respectively disposed on the metal substrate 10 and electrically connected thereto, and heat generated by the power chip 20 is transferred to the thermistor 30 through the metal substrate 10.
Preferably, the thermistor 30 proposed in the present embodiment may be disposed at a position close to the power chip 20, so that the heat generated by the power chip 20 can be timely conducted to the thermistor 30, the resistance value of the thermistor 30 is timely changed, and the detection accuracy of the thermistor 30 is improved.
Further, the modular smart power system provided in this embodiment is generally provided with a plurality of power chips 20, in order to enable the modular smart power system to accurately detect the temperature of each power chip 20, a plurality of thermistors 30 may be correspondingly disposed on the metal substrate 10, the plurality of thermistors 30 correspond to the plurality of power chips 20 one by one, and each thermistor 30 is disposed at a position close to the corresponding power chip 20.
Furthermore, the resistance of the thermistor 30 provided in this embodiment can be detected by an internal IC of the modular smart power system, and can also be detected by an external MCU of the modular smart power system, and those skilled in the art can design the resistance according to actual situations. If the detection is performed by the external MCU of the modular smart power system, the MCU needs to be electrically connected to the thermistor 30 through a pin of the modular smart power system.
EXAMPLE six
The over-current detection device of the modular intelligent power system provided by the embodiment of the invention further comprises:
and the first control module is used for controlling the modularized intelligent power system to reduce the frequency. In this embodiment, when the first determining module determines that the modular intelligent power system has an over-temperature condition and/or a sudden temperature change condition according to the resistance value of the thermistor 30 and/or the fluctuation value of the resistance value of the thermistor 30 within the preset time, the first control module controls the modular intelligent power system to reduce the frequency of the modular intelligent power system, so as to reduce the heat generation of the power chip 20 of the modular intelligent power system.
EXAMPLE seven
The over-current detection device of the modular intelligent power system provided by the embodiment of the invention further comprises:
and the second control module is used for controlling the modular intelligent power system to reduce the current. In this embodiment, when the first determining module determines that the modular intelligent power system has an over-temperature condition and/or a sudden temperature change condition according to the resistance value of the thermistor 30 and/or the second determining module determines that the modular intelligent power system has the over-temperature condition and/or the sudden temperature change condition according to the fluctuation value of the resistance value of the thermistor 30 within the preset time, the second control module controls the modular intelligent power system to reduce the current, so as to reduce the heat generation of the power chip 20 of the modular intelligent power system.
Example eight
The over-current detection device of the modular intelligent power system provided by the embodiment of the invention further comprises:
and the third control module is used for controlling the modular intelligent power system to be turned off. In this embodiment, when the first determining module determines that the modular intelligent power system has an over-high temperature and/or a sudden temperature change according to the resistance value of the thermistor 30 and/or the second determining module determines that the modular intelligent power system has a fluctuation value of the resistance value of the thermistor 30 within a preset time, the third controlling module controls the modular intelligent power system to turn off, so that the power chip 20 of the modular intelligent power system stops heating.
Example nine
Based on the aforementioned method for detecting an overcurrent in a modular intelligent power system, an embodiment of the present invention further provides an overcurrent detection device in a modular intelligent power system, where the overcurrent detection device in the modular intelligent power system includes:
a memory for storing a computer program;
a processor, configured to implement the method for detecting overheating of a modular smart power system described above when executing a computer program, the method for detecting overheating of a modular smart power system at least includes the following steps:
s10, acquiring the resistance value of the thermistor 30 and the fluctuation value thereof in a preset time;
s20, if the resistance value of the thermistor 30 is larger than a preset threshold value, judging that the internal temperature of the modular intelligent power system is too high; and/or the presence of a gas in the gas,
and S30, if the fluctuation value exceeds the preset fluctuation range, judging that the internal temperature of the modular intelligent power system is too high.
Example ten
Based on the aforementioned method for detecting an overcurrent in a modular intelligent power system, an embodiment of the present invention further provides a storage medium, where a computer program is stored, and when the computer program is executed by a processor, the method for detecting an overheat in a modular intelligent power system described above is implemented, where the method for detecting an overheat in a modular intelligent power system at least includes the following steps:
s10, acquiring the resistance value of the thermistor 30 and the fluctuation value thereof in a preset time;
s20, if the resistance value of the thermistor 30 is larger than a preset threshold value, judging that the internal temperature of the modular intelligent power system is too high; and/or the presence of a gas in the gas,
and S30, if the fluctuation value exceeds the preset fluctuation range, judging that the internal temperature of the modular intelligent power system is too high.
In the several embodiments provided in the present application, it should be understood that the disclosed method and apparatus may be implemented in other ways. For example, the above-described apparatus embodiments are merely illustrative, and for example, a division of modules is merely a division of logical functions, and an actual implementation may have another division, for example, a plurality of modules or components may be combined or integrated into another apparatus, or some features may be omitted, or not executed. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, devices or modules, and may be in an electrical, mechanical or other form.
Modules described as separate parts may or may not be physically separate, and parts displayed as modules may or may not be physical modules, may be located in one place, or may be distributed on a plurality of network modules. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment.
In addition, functional modules in the embodiments of the present invention may be integrated into one processing module, or each of the modules may exist alone physically, or two or more modules are integrated into one module. The integrated module can be realized in a hardware mode, and can also be realized in a software functional module mode.
The integrated module, if implemented in the form of a software functional module and sold or used as a separate product, may be stored in a computer readable storage medium. Based on such understanding, the technical solution of the present invention may be embodied in the form of a software product, which is stored in a storage medium and includes instructions for causing a computer device (which may be a personal computer, a server, or a network device) to execute all or part of the steps of the method according to the embodiments of the present invention. And the aforementioned storage medium includes: a U-disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk or an optical disk, and other various media capable of storing program codes.
The above is only a part or preferred embodiment of the present invention, and neither the text nor the drawings should limit the scope of the present invention, and all equivalent structural changes made by the present specification and the contents of the drawings or the related technical fields directly/indirectly using the present specification and the drawings are included in the scope of the present invention.
Claims (10)
1. A method for detecting overheating of a semiconductor circuit, the semiconductor circuit comprising a metal substrate, a power chip and a thermistor, the power chip and the thermistor being respectively disposed on the metal substrate and electrically connected thereto, heat generated by the power chip being transferred to the thermistor through the metal substrate, the method comprising:
acquiring the resistance value of the thermistor and the fluctuation value of the thermistor within preset time;
if the resistance value of the thermistor is larger than a preset threshold value, judging that the internal temperature of the semiconductor circuit is too high; and/or the presence of a gas in the gas,
and if the fluctuation value exceeds a preset fluctuation range, judging that the internal temperature of the semiconductor circuit is overhigh.
2. The method of claim 1, wherein when the internal temperature of the semiconductor circuit is determined to be too high, the method further comprises:
and controlling the semiconductor circuit to reduce the frequency.
3. The method of claim 1, wherein when the internal temperature of the semiconductor circuit is determined to be too high, the method further comprises:
controlling the semiconductor circuit to reduce current.
4. The method of claim 1, wherein when the internal temperature of the semiconductor circuit is determined to be too high, the method further comprises:
controlling the semiconductor circuit to be turned off.
5. An overheat detection device for a semiconductor circuit, the semiconductor circuit including a metal substrate, a power chip and a thermistor, the power chip and the thermistor being respectively provided on the metal substrate and electrically connected thereto, heat generated by the power chip being transferred to the thermistor through the metal substrate, the overheat detection device for a semiconductor circuit comprising:
the data acquisition module is used for acquiring the resistance value of the thermistor and the fluctuation value of the thermistor within preset time;
the first judgment module is used for judging that the internal temperature of the semiconductor circuit is overhigh if the resistance value of the thermistor is larger than a preset threshold value; and/or the presence of a gas in the gas,
and the second judgment module is used for judging that the internal temperature of the semiconductor circuit is overhigh if the fluctuation value exceeds a preset fluctuation range.
6. The apparatus for detecting overheat of a semiconductor circuit according to claim 5, further comprising:
the first control module is used for controlling the semiconductor circuit to reduce the frequency.
7. The apparatus for detecting overheat of a semiconductor circuit according to claim 5, further comprising:
and the second control module is used for controlling the semiconductor circuit to reduce the current.
8. The apparatus for detecting overheat of a semiconductor circuit according to claim 5, further comprising:
and the third control module is used for controlling the semiconductor circuit to be turned off.
9. An overheat detection apparatus for a semiconductor circuit, comprising:
a memory for storing a computer program;
a processor for implementing the method of detecting overheating of a semiconductor circuit as claimed in any one of claims 1 to 4 when executing said computer program.
10. A storage medium storing a computer program which, when executed by a processor, implements the method for detecting overheating in a semiconductor circuit according to any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111154833.XA CN113933685A (en) | 2021-09-29 | 2021-09-29 | Method, apparatus, device and storage medium for detecting overheat of semiconductor circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111154833.XA CN113933685A (en) | 2021-09-29 | 2021-09-29 | Method, apparatus, device and storage medium for detecting overheat of semiconductor circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113933685A true CN113933685A (en) | 2022-01-14 |
Family
ID=79277317
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111154833.XA Pending CN113933685A (en) | 2021-09-29 | 2021-09-29 | Method, apparatus, device and storage medium for detecting overheat of semiconductor circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113933685A (en) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005043162A (en) * | 2003-07-25 | 2005-02-17 | Toyota Industries Corp | Overheat detecting circuit and temperature monitoring method |
| CN103674314A (en) * | 2013-12-06 | 2014-03-26 | 小米科技有限责任公司 | Power source, electronic device and temperature detection method |
| CN207280619U (en) * | 2017-07-20 | 2018-04-27 | 深圳拓邦股份有限公司 | A kind of temperature sensing circuit, control panel and cooking appliance |
| CN208015355U (en) * | 2017-10-19 | 2018-10-26 | 深圳市壹优新能源有限公司 | A kind of temperature protection circuit |
| CN110602298A (en) * | 2019-09-24 | 2019-12-20 | 上海南芯半导体科技有限公司 | Method for effectively detecting overheat burning of USB C port of mobile phone |
| CN111262288A (en) * | 2018-12-03 | 2020-06-09 | 法雷奥日本株式会社 | Charging device |
| CN111799761A (en) * | 2020-06-24 | 2020-10-20 | 华源智信半导体(深圳)有限公司 | Temperature protection method and circuit based on pin multiplexing |
| CN211982174U (en) * | 2020-05-20 | 2020-11-20 | 株洲利德英可电子科技有限公司 | Temperature measurement feedback electromagnetic induction heating body based on thick film technology |
-
2021
- 2021-09-29 CN CN202111154833.XA patent/CN113933685A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005043162A (en) * | 2003-07-25 | 2005-02-17 | Toyota Industries Corp | Overheat detecting circuit and temperature monitoring method |
| CN103674314A (en) * | 2013-12-06 | 2014-03-26 | 小米科技有限责任公司 | Power source, electronic device and temperature detection method |
| CN207280619U (en) * | 2017-07-20 | 2018-04-27 | 深圳拓邦股份有限公司 | A kind of temperature sensing circuit, control panel and cooking appliance |
| CN208015355U (en) * | 2017-10-19 | 2018-10-26 | 深圳市壹优新能源有限公司 | A kind of temperature protection circuit |
| CN111262288A (en) * | 2018-12-03 | 2020-06-09 | 法雷奥日本株式会社 | Charging device |
| CN110602298A (en) * | 2019-09-24 | 2019-12-20 | 上海南芯半导体科技有限公司 | Method for effectively detecting overheat burning of USB C port of mobile phone |
| CN211982174U (en) * | 2020-05-20 | 2020-11-20 | 株洲利德英可电子科技有限公司 | Temperature measurement feedback electromagnetic induction heating body based on thick film technology |
| CN111799761A (en) * | 2020-06-24 | 2020-10-20 | 华源智信半导体(深圳)有限公司 | Temperature protection method and circuit based on pin multiplexing |
Non-Patent Citations (1)
| Title |
|---|
| 刘丽等: "《传感器与自动检测技术》", 31 August 2012, 中国铁道出版社, pages: 227 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102656763B (en) | Apparatus and method for protecting power semiconductor switch element | |
| CN104935026B (en) | Battery cell arrangement with battery cells and current limiting circuit and corresponding method | |
| JP2011258623A (en) | Power semiconductor system | |
| CN106679076B (en) | Temperature control method and control device for frequency converter power module | |
| US20060010330A1 (en) | Power monitoring circuit having automatic feedback and overload protection | |
| CN104332954A (en) | Circuit for Thermal Protection and Power Regulation of Electric Motors | |
| US11043830B2 (en) | Vehicle and electric power control device for vehicle | |
| KR20190124473A (en) | Apparatus and Method for measuring temperature of relay | |
| JPWO2017175326A1 (en) | Power module | |
| CN102301553B (en) | At the method and apparatus had for overload detection in the equipment of motor that battery pack is run | |
| US10367345B2 (en) | Temperature detection device | |
| KR20130055892A (en) | Inverter igbt gate driving apparatus | |
| US6141199A (en) | Device for protecting a braking resistor for locomotives | |
| JP6260710B2 (en) | Semiconductor module | |
| JP6844702B2 (en) | Equipment protection device and equipment protection method | |
| CN113933685A (en) | Method, apparatus, device and storage medium for detecting overheat of semiconductor circuit | |
| CN216288453U (en) | Semiconductor circuit having a plurality of transistors | |
| JPH1038964A (en) | Apparatus for detecting temperature of semiconductor module | |
| US11146221B2 (en) | Method for overtemperature protection and audio apparatus | |
| CN109560746B (en) | Overload protection method and device for electric vehicle driving system | |
| CN113990859A (en) | Semiconductor circuit having a plurality of transistors | |
| JP2001086764A (en) | Inverter | |
| CN116601471A (en) | Method and device for over-temperature protection of power device of motor controller | |
| CN106482859B (en) | Method and device for determining the temperature of a plurality of switching units of a switching device of a control unit, and switching device of a control unit | |
| CN112000913A (en) | Resistance temperature identification method, chopping control method, electronic device and storage medium |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |