CN216288453U - Semiconductor circuit having a plurality of transistors - Google Patents
Semiconductor circuit having a plurality of transistors Download PDFInfo
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- CN216288453U CN216288453U CN202122450247.1U CN202122450247U CN216288453U CN 216288453 U CN216288453 U CN 216288453U CN 202122450247 U CN202122450247 U CN 202122450247U CN 216288453 U CN216288453 U CN 216288453U
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- detection unit
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- thermistor
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Abstract
The utility model discloses a semiconductor circuit, which comprises a heat dissipation substrate and a circuit wiring layer arranged on the heat dissipation substrate, wherein a driving chip, a temperature detection module and a power device module are arranged on the circuit wiring layer; the temperature detection module comprises a first temperature detection unit and at least one second temperature detection unit, the first temperature detection unit is arranged close to the driving chip, and the second temperature detection unit is arranged close to the power device module; the driving chip is electrically connected with the first temperature detection units and the second temperature detection units. According to the technical scheme, when a power device or a driving chip in the module instantly generates a large amount of heat, the heat can be detected and fed back in time, so that the module can trigger over-temperature protection in time, and the module is prevented from being damaged.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a semiconductor circuit.
Background
The conventional smart power module generally employs a temperature sensor disposed therein to detect the temperature of the heat dissipation substrate. When the temperature reaches a certain temperature, the temperature sensor feeds back a corresponding signal to the driving chip, the module triggers an over-temperature protection mechanism, and the module stops working. The scheme for detecting the feedback temperature has the following defects: when the load of the module suddenly changes or the running current suddenly increases, a power device or a driving chip in the module instantly generates a large amount of heat which can not be timely transmitted to the temperature sensor, so that the module can not trigger over-temperature protection in time, and the module is damaged.
SUMMERY OF THE UTILITY MODEL
The utility model mainly aims to provide a semiconductor circuit, which can realize timely detection and feedback when a power device or a driving chip in a module generates a large amount of heat instantly, so that the module can trigger over-temperature protection in time, and the damage of the module is avoided.
In order to achieve the above object, the semiconductor circuit provided by the present invention includes a heat dissipation substrate and a circuit wiring layer disposed on the heat dissipation substrate, wherein a driving chip, a temperature detection module and a power device module are disposed on the circuit wiring layer, and the driving chip is electrically connected to the power device module and drives and controls the power device module to operate; the temperature detection module comprises a first temperature detection unit and at least one second temperature detection unit, the first temperature detection unit is arranged close to the driving chip, and the second temperature detection unit is arranged close to the power device module; the driving chip is electrically connected with the first temperature detection unit and each second temperature detection unit.
Preferably, the power device module includes three-phase inverter bridges, the number of the second temperature detection units corresponds to the number of transistors of the three-phase inverter bridges one to one, and each of the second temperature detection units is disposed adjacent to its corresponding transistor.
Preferably, the power device module includes a three-phase inverter bridge, the number of the second temperature detection units is one, and each transistor of the three-phase inverter bridge is disposed around the second temperature detection unit.
Preferably, the power device module further includes a PFC switching tube, and the temperature detection module further includes the second temperature detection unit disposed adjacent to the PFC switching tube.
Preferably, the first temperature detection unit adopts a first thermistor, and the second temperature detection unit adopts a second thermistor.
Preferably, a fault signal pin of the driving chip is connected with a high-level power supply through a pull-up resistor, one end of the first thermistor is electrically connected with the fault signal pin, and the other end of the first thermistor is grounded; each second thermistor is connected with the first thermistor in parallel.
Preferably, the first thermistor and the second thermistor are both NTC resistors.
Preferably, the pull-up resistor is embedded in the driving chip, and the high-level power supply is a power pin of the driving chip.
Preferably, the driving chip includes a driving unit and a processing unit electrically connected to the driving unit, the driving unit is electrically connected to the power device module, and the driving unit drives and controls the power device module; and the fault signal pin of the driving chip is electrically connected with the processing unit, and the processing unit is electrically connected with the first temperature detection unit and each second temperature detection unit.
According to the technical scheme of the semiconductor circuit, the temperature detection module respectively detects the temperature near the driving chip and the temperature near the power device module by adopting the first temperature detection unit adjacent to the driving chip and the second temperature detection unit adjacent to the power device module, so that when the driving chip or the power device module generates a large amount of heat instantly due to load sudden change or running current sudden increase and other abnormalities in the semiconductor circuit, the driving chip can timely detect the internal overheating condition through the first temperature detection unit or the second temperature detection unit and output a fault signal to an external MCU (micro control unit) to enable the external MCU to control the driving chip to stop working, the internal circuit and the device of the semiconductor circuit are protected from being damaged, and the overheating protection effect is effectively improved.
Drawings
FIG. 1 is a block diagram of a semiconductor circuit according to an embodiment of the present invention;
fig. 2 is a schematic layout view of a first temperature detection unit and a second temperature detection unit according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of the layout of the components of a semiconductor circuit in accordance with an embodiment of the present invention;
FIG. 4 is a schematic diagram of the layout of the components of a semiconductor circuit in an embodiment of the present invention;
FIG. 5 is a schematic diagram of the layout of the components of a semiconductor circuit in an embodiment of the present invention;
FIG. 6 is a partial circuit schematic of a semiconductor circuit according to an embodiment of the present invention;
FIG. 7 is a block diagram of a semiconductor circuit according to an embodiment of the present invention;
fig. 8 is a partial circuit schematic diagram of the semiconductor circuit in the embodiment of fig. 7.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that all the directional indicators (such as up, down, left, right, front, and rear … …) in the embodiment of the present invention are only used to explain the relative position relationship between the components, the movement situation, etc. in a specific posture (as shown in the drawing), and if the specific posture is changed, the directional indicator is changed accordingly.
It will also be understood that when an element is referred to as being "secured to" or "disposed on" another element, it can be directly on the other element or intervening elements may also be present. When an element is referred to as being "connected" to another element, it can be directly connected to the other element or intervening elements may also be present.
In addition, the descriptions related to "first", "second", etc. in the present invention are for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The semiconductor circuit provided by the utility model is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc. In the following embodiments of the present invention, collectively referred to as a Modular Intelligent Power System (MIPS).
The utility model provides an MIPS.
In this embodiment, the MIPS includes a heat dissipation substrate and a circuit wiring layer disposed on the heat dissipation substrate, wherein the heat dissipation substrate is made of a metal material, specifically, a rectangular plate made of aluminum or other metal materials with good heat dissipation performance; a circuit wiring layer is disposed on the heat dissipation substrate, the circuit wiring layer including an insulating layer disposed on the heat dissipation substrate and conductive layer traces (e.g., copper traces) formed on the insulating layer.
Referring to fig. 1 and 2, the driving chip 10, the temperature detecting module 20, and the power device module 30 are disposed on the circuit wiring layer of the MIPS of this embodiment. The driving chip 10 is electrically connected to the power device module 30, drives and controls the power device module 30 to work, and the driving chip 10 controls the on-off state switching of the power device in the power device module 30 by outputting a pulse driving signal. The temperature detection module 20 comprises a first temperature detection unit 21 and at least one second temperature detection unit 22; the first temperature detection unit 21 is disposed adjacent to the driving chip 10 to detect a temperature of a position near the driving chip 10; the second temperature detection unit 22 is disposed adjacent to the power device module 30 to detect a temperature near the power device module 30. The driving chip 10 is electrically connected to the first temperature detecting unit 21 and each of the second temperature detecting units 22, when the driving chip 10 detects that the temperature of the first temperature detecting unit 21 or any one of the second temperature detecting units 22 exceeds a preset temperature, that is, when the driving chip 10 detects that the temperature of the driving chip is overheated near the driving chip 10 or the power device module 30 is overheated near the driving chip, the driving chip 10 enables the fault signal pin F of the driving chip to output a fault signal, and the external MCU sends a corresponding control signal (for example, a shutdown signal) to the driving chip 10 after receiving the fault signal output by the driving chip 10, so that the driving chip 10 stops working, thereby effectively protecting the MIPS.
In the MIPS of this embodiment, the temperature detection module 20 employs the first temperature detection unit 21 adjacent to the driving chip 10 and the second temperature detection unit 22 adjacent to the power device module 30 to detect the temperature near the driving chip 10 and the temperature near the power device module 30, respectively, so that when a large amount of heat is instantaneously generated in the driving chip 10 or the power device module 30 due to abnormal conditions such as sudden load change or sudden increase of operating current in the MIPS, the driving chip 10 can detect an internal overheating condition in time through the first temperature detection unit 21 or the second temperature detection unit 22, and output a fault signal to the external MCU, and the external MCU controls the driving chip 10 to stop working, thereby protecting internal circuits and devices of the MIPS from being damaged, and effectively improving an overheating protection effect.
Referring to fig. 3, in the present embodiment, the power device module 30 includes three-phase inverter bridges, the number of the second temperature detection units 22 corresponds to the number of transistors 31 of the three-phase inverter bridges one by one, and each second temperature detection unit 22 is disposed adjacent to its corresponding transistor 31. The three-phase inverter bridge has 6 transistors 31 (MOS transistors), that is, 6 second temperature detection units 22; the driving chip 10 may adopt an HVIC chip to drive the six transistors 31 of the three-phase inverter bridge by outputting six driving signals, respectively. The second temperature detection unit 22 is correspondingly arranged near each transistor 31 of the three-phase inverter bridge to detect the temperature near each transistor 31, so that when an overheating condition occurs to a certain transistor 31 due to sudden load change, sudden increase of running current or other abnormal reasons in the circuit, the second temperature detection unit 22 near the transistor 31 can detect the overheating condition of the transistor 31 in time and feed the overheating condition back to the driving chip 10, and the driving chip 10 outputs a fault signal in time, so that the MIPS triggers a protection mechanism in time, and the safety of the MIPS is improved.
Referring to fig. 4, in the present embodiment, the power device module 30 includes a three-phase inverter bridge, the number of the second temperature detection units 22 is one, and each transistor 31 of the three-phase inverter bridge is disposed around the second temperature detection unit 22. Each transistor 31 of the three-phase inverter bridge is arranged around one second temperature detection unit 22, so that the second temperature detection unit 22 is in a neighboring state relative to each transistor 31, and when any transistor 31 of the three-phase inverter bridge is overheated, the overheating protection processing can be timely detected through the second temperature detection unit 22 and fed back to the driving chip 10 for overheating protection processing. In this embodiment, the transistors 31 of the three-phase inverter bridge and the second temperature detecting unit 22 are distributed reasonably, so that the number of the second temperature detecting units 22 can be reduced, the cost can be reduced, and the module size of the MIPS can be reduced.
Referring to fig. 5, in this embodiment, the power device module 30 further includes a PFC switch tube 32, the driving chip 10 drives and controls the on-off state of the PFC switch tube 32 by outputting a driving signal, and the temperature detection module 20 further includes a second temperature detection unit 22 disposed adjacent to the PFC switch tube 32. The second temperature detecting unit 22 adjacent to the PFC switch tube 32 detects the temperature near the PFC switch tube 32, and detects and feeds back the detected temperature to the driving chip 10 in time when the PFC switch tube 32 is overheated abnormally.
In some embodiments, the power device module 30 may further include other power devices, such as an H-bridge structure composed of 4 MOS transistors, a single-phase bridge structure composed of two MOS transistors, and so on.
Referring to fig. 6, in the present embodiment, the first temperature detecting unit 21 employs a first thermistor Rt1, and the second temperature detecting unit 22 employs a second thermistor Rt 2. Of course, in other embodiments, other temperature detection devices, temperature detection circuits, and the like may be used for the first temperature detection unit 21 and the second temperature detection unit 22.
In this embodiment, the fault signal pin F is connected to the high-level power supply VDD through the first pull-up resistor Rs1, one end of the first thermistor Rt1 is electrically connected to the fault signal pin F, and the other end is grounded VSS; each of the second thermistors Rt2 is connected in parallel with the first thermistor Rt1 (in the present embodiment, 1 second thermistor Rt2 is taken as an example). In this embodiment, the principle of the output signal of the fault signal pin F of the driver chip 10 is as follows: the voltage of the fault signal pin F is a divided voltage value of the resistance value of the first thermistor Rt1 connected in parallel with each second thermistor Rt2 to the high-level power supply VDD, the resistance values of the first thermistor Rt1 and the second thermistor Rt2 change along with the temperature change of the setting position, and when the resistance value of the first thermistor Rt1 and/or the second thermistor Rt2 exceeds a preset resistance value along with the temperature change, the resistance value of the first thermistor Rt1 connected in parallel with each second thermistor Rt2 to the divided voltage value of the high-level power supply VDD exceeds a potential change critical value, so that the potential output by the fault signal pin F changes (for example, the high level changes to the low level, or the low level changes to the high level), that is, a fault signal (low level or high level) is output.
Further, in the present embodiment, the first thermistor Rt1 and the second thermistor Rt2 both use NTC (Negative Temperature Coefficient) resistors; the resistance of the NTC resistor gradually becomes smaller with the rise of temperature. In this way, when the driving chip 10 is overheated, the resistance of the first thermistor Rt1 is decreased, so that the overall resistance of the first thermistor Rt1 connected in parallel with each second thermistor Rt2 is decreased, the divided voltage value of the resistance of the first thermistor Rt1 connected in parallel with each second thermistor Rt2 to the high-level power supply VDD is changed from the high-level voltage to the low-level voltage, and the low level (i.e. the fault signal) is output by the fault signal pin F; similarly, when any one of the power devices in the power device module 30 is overheated, the resistance of the corresponding second thermistor Rt2 decreases, so that the overall resistance of the parallel connection of the first thermistor Rt1 and each second thermistor Rt2 is reduced, the divided value of the resistance of the parallel connection of the first thermistor Rt1 and each second thermistor Rt2 to the high-level power supply VDD changes from the high-level voltage to the low-level voltage, and the fault signal pin F outputs a low level (i.e., a fault signal).
Of course, in other embodiments, the first thermistor Rt1 and the second thermistor Rt2 can also adopt PTC resistors, and the fault signal output can be realized by the same principle.
In some embodiments, the first pull-up resistor Rs1 is embedded in the driver chip 10, and the high-level power supply VDD is a power supply pin of the driver chip 10, so that the integration level of the MIPS module is improved, the number of internal devices is reduced, and the MIPS module is more intelligent.
Referring to fig. 7, in the present embodiment, the driving chip 10 includes a driving unit 11 and a processing unit 12 electrically connected to the driving unit 11, the driving unit 11 is electrically connected to the power device module 30, and the driving unit 11 drives and controls the power device module 30; the fault signal pin F of the driving chip 10 is electrically connected to the processing unit 12, the processing unit 12 is electrically connected to the first temperature detecting unit 21 and each of the second temperature detecting units 22, and the processing unit 12 enables the fault signal pin F to output a fault signal when the first temperature detecting unit 21 or any one of the second temperature detecting units 22 detects that the temperature exceeds a preset temperature.
Referring to fig. 8, in an embodiment, the detection pin of the processing unit 12 may be connected to a high-level power supply VDD through a second pull-up resistor Rs2, one end of the first thermistor Rt1 is electrically connected to the detection pin, and the other end is grounded to VSS; each second thermistor Rt2 is connected in parallel with the first thermistor Rt 1; the fault signal pin F is electrically connected to the processing unit 12. In this way, the processing unit 12 determines whether the temperature detected by the first temperature detecting unit 21 or any one of the second temperature detecting units 22 exceeds the preset temperature according to the voltage value of the detection pin (the principle refers to the above embodiment), and the processing unit 12 controls whether the fault signal pin F outputs the fault signal.
Further, the processing unit 12 adjusts the driving frequency of the driving unit 11 according to the temperature signals fed back by the first temperature detecting unit 21 and the respective second temperature detecting units 22. For example, when it is determined that the temperatures do not exceed the preset temperature according to the temperature signals fed back by the first temperature detection unit 21 and the respective second temperature detection units 22, the overall driving frequency of the driving unit 11 is adjusted to be decreased according to the temperature signals fed back by the first temperature detection unit 21, or the driving frequencies of the driving unit 11 to the respective power devices of the power device module 30 are adjusted according to the temperature signals fed back by the respective second temperature detection units 22, so as to decrease the overall temperature of the MIPS.
The above description is only a part of or preferred embodiments of the present invention, and neither the text nor the drawings should be construed as limiting the scope of the present invention, and all equivalent structural changes, which are made by using the contents of the present specification and the drawings, or any other related technical fields, are included in the scope of the present invention.
Claims (9)
1. A semiconductor circuit is characterized by comprising a heat dissipation substrate and a circuit wiring layer arranged on the heat dissipation substrate, wherein a driving chip, a temperature detection module and a power device module are arranged on the circuit wiring layer, and the driving chip is electrically connected with the power device module and drives and controls the power device module to work; the temperature detection module comprises a first temperature detection unit and at least one second temperature detection unit, the first temperature detection unit is arranged close to the driving chip, and the second temperature detection unit is arranged close to the power device module; the driving chip is electrically connected with the first temperature detection unit and each second temperature detection unit.
2. The semiconductor circuit according to claim 1, wherein the power device module comprises three-phase inverter bridges, the number of the second temperature detection units corresponds to the number of transistors of the three-phase inverter bridges one to one, and each of the second temperature detection units is disposed adjacent to its corresponding transistor.
3. The semiconductor circuit according to claim 1, wherein the power device module includes a three-phase inverter bridge, the number of the second temperature detection units is one, and each transistor of the three-phase inverter bridge is disposed around the second temperature detection unit.
4. The semiconductor circuit according to claim 2 or 3, wherein the power device module further comprises a PFC switch tube, and the temperature detection module further comprises the second temperature detection unit disposed adjacent to the PFC switch tube.
5. The semiconductor circuit according to any one of claims 1 to 3, wherein the first temperature detection unit employs a first thermistor, and the second temperature detection unit employs a second thermistor.
6. The semiconductor circuit according to claim 5, wherein a fault signal pin of the driver chip is connected to a high-level power supply through a pull-up resistor, one end of the first thermistor is electrically connected to the fault signal pin, and the other end is grounded; each second thermistor is connected with the first thermistor in parallel.
7. The semiconductor circuit according to claim 6, wherein the first thermistor and the second thermistor are both NTC resistors.
8. The semiconductor circuit according to claim 6, wherein the pull-up resistor is built in the driver chip, and the high-level power supply is a power supply pin of the driver chip.
9. The semiconductor circuit according to any one of claims 1 to 3, wherein the driving chip includes a driving unit and a processing unit electrically connected to the driving unit, the driving unit is electrically connected to the power device module, and the driving unit drives and controls the power device module; and the fault signal pin of the driving chip is electrically connected with the processing unit, and the processing unit is electrically connected with the first temperature detection unit and each second temperature detection unit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122450247.1U CN216288453U (en) | 2021-10-11 | 2021-10-11 | Semiconductor circuit having a plurality of transistors |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202122450247.1U CN216288453U (en) | 2021-10-11 | 2021-10-11 | Semiconductor circuit having a plurality of transistors |
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| CN216288453U true CN216288453U (en) | 2022-04-12 |
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| CN202122450247.1U Active CN216288453U (en) | 2021-10-11 | 2021-10-11 | Semiconductor circuit having a plurality of transistors |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117040247A (en) * | 2023-10-10 | 2023-11-10 | 广东汇芯半导体有限公司 | Intelligent power module |
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2021
- 2021-10-11 CN CN202122450247.1U patent/CN216288453U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117040247A (en) * | 2023-10-10 | 2023-11-10 | 广东汇芯半导体有限公司 | Intelligent power module |
| CN117040247B (en) * | 2023-10-10 | 2023-12-12 | 广东汇芯半导体有限公司 | Intelligent power module |
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