CN113933671B - MOS device temperature detection device - Google Patents
MOS device temperature detection device Download PDFInfo
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- CN113933671B CN113933671B CN202111020176.XA CN202111020176A CN113933671B CN 113933671 B CN113933671 B CN 113933671B CN 202111020176 A CN202111020176 A CN 202111020176A CN 113933671 B CN113933671 B CN 113933671B
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- 238000001514 detection method Methods 0.000 title claims abstract description 70
- 238000005070 sampling Methods 0.000 claims abstract description 53
- 238000004891 communication Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 12
- 238000012545 processing Methods 0.000 claims description 4
- 238000012795 verification Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 3
- 230000002427 irreversible effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/26—Testing of individual semiconductor devices
- G01R31/2607—Circuits therefor
- G01R31/2621—Circuits therefor for testing field effect transistors, i.e. FET's
- G01R31/2628—Circuits therefor for testing field effect transistors, i.e. FET's for measuring thermal properties thereof
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/08—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors
- H02H7/085—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for dynamo-electric motors against excessive load
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/02—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess current
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Measurement Of Current Or Voltage (AREA)
Abstract
The embodiment of the invention provides a temperature detection device for a MOS device. The MOS device temperature detection device comprises: the voltage detection component is used for detecting the voltage of the MOS device and obtaining a voltage sampling value; the current detection component is used for detecting the current of the MOS device and obtaining a current sampling value; the processor is respectively connected with the voltage detection assembly and the current detection assembly in a communication way, and is used for calculating a current calculation value of the MOS device according to the voltage sampling value and a preset resistance value corresponding to the MOS device, and carrying out comparison and verification according to the current calculation value and the current sampling value to obtain an accurate current value; and calculating the resistance value of the MOS device according to the accurate current value and the voltage sampling value, and determining the current temperature value of the MOS device according to the resistance value and the preset corresponding relation between the resistance and the temperature of the MOS device. By adopting the technical scheme of the embodiment of the invention, the temperature of the MOS device can be timely and accurately detected, and the MOS device is prevented from being damaged due to overhigh temperature.
Description
Technical Field
The invention relates to the technical field of MOSFET devices, in particular to a temperature detection device for an MOS device.
Background
The temperature monitoring method in the motor controller generally uses a thermistor to sample the temperature, the method can detect the temperature of each component, but for MOSFET devices (hereinafter referred to as MOS devices), the detected temperature data is different from the actual working temperature of the MOS devices, when extreme working conditions such as motor locked rotor and the like occur, the MOS devices can rapidly generate heat, and the thermistor cannot timely and accurately reflect the actual temperature of the MOS devices, so that the MOS devices can fail and break down, and irreversible damage can occur to the motor and the controller thereof.
Disclosure of Invention
The embodiment of the invention provides a temperature detection device for an MOS device, which can timely and accurately detect the temperature of the MOS device and prevent the MOS device from being damaged due to overhigh temperature.
To achieve the above object, an embodiment of the present invention provides a MOS device temperature detection apparatus, including: the voltage detection component is used for detecting the voltage of the MOS device and obtaining a voltage sampling value; the current detection component is used for detecting the current of the MOS device and obtaining a current sampling value; the processor is respectively connected with the voltage detection assembly and the current detection assembly in a communication way, and is used for calculating a current calculation value of the MOS device according to the voltage sampling value and a preset resistance value corresponding to the MOS device, and carrying out comparison and verification according to the current calculation value and the current sampling value to obtain an accurate current value; and calculating the resistance value of the MOS device according to the accurate current value and the voltage sampling value, and determining the current temperature value of the MOS device according to the resistance value and the preset corresponding relation between the resistance and the temperature of the MOS device.
Optionally, the MOS device temperature detecting apparatus further includes: the temperature detection component is used for detecting the temperature of the MOS device and obtaining a temperature sampling value; the processor is also in communication connection with the temperature detection assembly and is used for executing over-temperature protection processing when the temperature sampling value and the current temperature value are both greater than a preset temperature threshold value.
Optionally, the processor is further configured to perform an over-temperature protection process when a difference between the temperature sampling value and the current temperature value is greater than a second preset threshold.
Optionally, performing a comparison check according to the current calculation value and the current sampling value to obtain an accurate current value, including: and when the difference value between the current calculated value and the current sampling value is smaller than a first preset threshold value, taking the current sampling value as an accurate current value.
Optionally, the processor is further configured to perform current limiting protection processing when the current sampling value and the current calculation value both exceed a preset current threshold value.
Optionally, the preset resistance value is a typical value corresponding to the MOS device in the specification.
Optionally, the preset correspondence relationship includes a resistance versus temperature curve corresponding to the MOS device in the specification.
Optionally, the MOS device is one of MOS devices in upper and lower bridge arms of any phase of the three-phase MOS device; the voltage detection component and the current detection component are used for respectively detecting the voltage and the current of the MOS device when the driver of the MOS device is started.
According to the MOS device temperature detection device provided by the embodiment of the invention, the voltage and the current of the MOS device are detected, the current calculation value of the MOS device is calculated according to the voltage sampling value and the preset resistance value, then the current calculation value and the current sampling value are compared and checked to obtain the accurate current value of the MOS device, the resistance value of the MOS device is calculated according to the accurate current value and the voltage sampling value, and the current temperature value of the MOS device is determined according to the preset corresponding relation between the resistance of the MOS device and the temperature, so that the temperature detection of the MOS device is realized in an indirect detection mode, the timeliness and the accuracy of the temperature detection of the MOS device are effectively improved, and the problem that the MOS device is damaged due to inaccurate detection temperature by methods such as a thermistor is solved.
Drawings
Fig. 1 is a schematic structural diagram of a MOS device temperature detecting apparatus according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a part of a temperature detection apparatus for a MOS device according to an embodiment of the present invention.
Reference numerals illustrate:
1. a processor; 2. a voltage detection assembly; 3. a current detection assembly; 4. a temperature detection assembly; 5. a driver.
Detailed Description
The following description of embodiments of the present invention will be made in further detail with reference to the drawings (like numerals designate like elements throughout the several views) and examples. The following examples are illustrative of the invention and are not intended to limit the scope of the invention.
Fig. 1 shows a schematic structural diagram of a MOS device temperature detection apparatus according to an embodiment of the present invention, where the MOS device temperature detection apparatus according to the embodiment of the present invention may be disposed in a device such as a motor controller, and is used for detecting a temperature of a MOS device in the device, so as to accurately detect the temperature of the MOS device in real time, prevent the MOS device from being damaged due to an excessively high temperature, and ensure a normal operation of the device.
Referring to fig. 1, a MOS device temperature detection apparatus according to an embodiment of the present invention includes a processor 1, a voltage detection component 2, and a current detection component 3. The voltage detection component 2 is electrically connected with the MOS device to be detected in a voltage detection circuit manner, and is used for detecting the voltage of the MOS device to obtain a voltage sampling value. The current detection component 3 can be electrically connected with the MOS device to be detected in a current detection circuit mode and is used for detecting the current of the MOS device to obtain a current sampling value. The processor 1 is respectively connected with the voltage detection assembly 2 and the current detection assembly 3 in a communication way, and is used for receiving a voltage sampling value detected by the voltage detection assembly 2 and a current sampling value detected by the current detection assembly 3, calculating a current calculation value of the MOS device according to the voltage sampling value and a preset resistance value corresponding to the MOS device, and carrying out comparison and verification according to the current calculation value and the current sampling value to obtain an accurate current value; and calculating the resistance value of the MOS device according to the accurate current value and the voltage sampling value, determining the temperature value corresponding to the calculated resistance value according to the preset corresponding relation between the resistance value and the resistance and the temperature of the MOS device, and determining the temperature value as the current temperature value of the MOS device.
According to the MOS device temperature detection device, the voltage and the current of the MOS device are detected, the current calculation value of the MOS device is calculated according to the voltage sampling value and the preset resistance value, then the current calculation value and the current sampling value are compared and checked to obtain the accurate current value of the MOS device, the resistance value of the MOS device is calculated according to the accurate current value and the voltage sampling value, and the current temperature value of the MOS device is determined according to the preset corresponding relation between the resistance of the MOS device and the temperature, so that the temperature detection of the MOS device is realized in an indirect detection mode, the temperature detection accuracy of the MOS device is effectively improved, and the problem that the MOS device is damaged due to inaccurate detection temperature by methods such as a thermistor is solved.
As shown in fig. 1 and fig. 2, the MOS device to be tested may be one of MOS devices in upper and lower arms of any phase of the three-phase MOS device; the voltage detection component 2 and the current detection component 3 are used for respectively detecting the voltage and the current when the MOS device is turned on when the driver 6 of the MOS device is started. In an actual application scenario, the MOS device to be tested may include two of the three-phase MOS devices, that is, the current and the voltage of the two-phase MOS device are detected, and the current and the voltage of the third-phase MOS device may be obtained through calculation. Specifically, as shown in fig. 2, when detecting a u-phase electrical MOS device, the detected voltage sample value may be referred to as a detected current sample value.
In an alternative embodiment, when calculating the current value of the MOS device, the preset resistance value is a typical value corresponding to the MOS device in the specification. For example, for a u-phase electrical MOS device, the current is calculated, where it is typical in the specification corresponding to the MOS device under test.
Optionally, the comparison and verification is performed according to the current calculation value and the current sampling value, and when the difference between the current calculation value and the current sampling value is smaller than the first preset threshold value, the current sampling value is taken as an accurate current value. That is, when the difference between the current calculation value and the current sampling value is smaller than the first preset threshold value, the current calculation value and the current sampling value are taken as accurate current values. The first preset threshold value can be set according to the actual working conditions of the MOS device and the equipment where the MOS device is located.
Optionally, when calculating the temperature value of the MOS device, the preset correspondence relationship adopted includes a resistance and temperature curve corresponding to the MOS device in the specification. Specifically, for the u-phase electric MOS device, the calculated resistance value is used for determining the corresponding temperature value as the current temperature value of the MOS device to be tested through the resistance and temperature curve corresponding to the MOS device to be tested in the specification.
In an alternative embodiment, the MOS device temperature detecting apparatus further includes: the temperature detection assembly 4, the temperature detection assembly 4 may specifically include a thermistor temperature measuring element, which is used for detecting the temperature of the MOS device to be detected, and obtaining a temperature sampling value; the processor 1 is also in communication connection with the temperature detection assembly 4, and is used for executing over-temperature protection processing when the temperature sampling value and the current temperature value are both greater than a preset temperature threshold value, so as to prevent damage to the MOS device caused by over-temperature.
In addition, the processor 1 is further configured to perform an over-temperature protection process when the difference between the temperature sampling value and the current temperature value is greater than a second preset threshold value. The preset temperature threshold and the second preset threshold can be determined according to the performance of the MOS device to be tested. Here, the over-temperature protection process may include derating the power device, and shutting down the drive and shutting down the power device.
Optionally, the processor is further configured to perform a current limiting protection process when the current sampling value and the current calculation value both exceed a preset current threshold value, so as to prevent damage to the MOS device due to the power meter. The preset current threshold value can be determined according to the performance of the MOS device to be tested and the actual working condition of the equipment. Here, the current limiting protection process may include derating the power device, and shutting down the drive and shutting down the power device.
According to the MOS device temperature detection device provided by the embodiment of the invention, the voltage and the current of the MOS device are detected, the current calculation value of the MOS device is calculated according to the voltage sampling value and the preset resistance value, then the current calculation value and the current sampling value are compared and checked to obtain the accurate current value of the MOS device, the resistance value of the MOS device is calculated according to the accurate current value and the voltage sampling value, and the current temperature value of the MOS device is determined according to the preset corresponding relation between the resistance of the MOS device and the temperature, so that the temperature detection of the MOS device is realized in an indirect detection mode, the timeliness and the accuracy of the temperature detection of the MOS device are effectively improved, and the problem that the MOS device is damaged due to inaccurate detection temperature by methods such as a thermistor is solved; moreover, the method has the advantages of reliable performance, simple equipment, lower cost and the like.
It should be noted that each component described in the embodiments of the present invention may be split into more components according to the implementation needs, and two or more components or parts of components may be combined into new components to achieve the objects of the embodiments of the present invention.
The above embodiments are only for illustrating the embodiments of the present invention, but not for limiting the embodiments of the present invention, and various changes, modifications or substitutions can be made by one of ordinary skill in the relevant art without departing from the spirit and scope of the embodiments of the present invention, so that all equivalent technical solutions also fall within the scope of the embodiments of the present invention, and the scope of the embodiments of the present invention is defined by the claims.
Claims (5)
1. A MOS device temperature detection apparatus, characterized in that the MOS device temperature detection apparatus comprises:
the voltage detection component (2) is used for detecting the voltage of the MOS device and obtaining a voltage sampling value;
The current detection component (3) is used for detecting the current of the MOS device and obtaining a current sampling value;
The temperature detection component (4) is used for detecting the temperature of the MOS device and obtaining a temperature sampling value;
The processor (1) is respectively in communication connection with the voltage detection assembly (2), the current detection assembly (3) and the temperature detection assembly (4), and is used for calculating a current calculation value of the MOS device according to the voltage sampling value and a preset resistance value corresponding to the MOS device, comparing and checking the current calculation value and the current sampling value to obtain an accurate current value, and taking the current sampling value as the accurate current value when the difference value between the current calculation value and the current sampling value is smaller than a first preset threshold value; calculating the resistance value of the MOS device according to the accurate current value and the voltage sampling value, and determining the current temperature value of the MOS device according to the resistance value and the preset corresponding relation between the resistance and the temperature of the MOS device; and when the temperature sampling value and the current temperature value are both larger than a preset temperature threshold value, or when the difference value between the temperature sampling value and the current temperature value is larger than a second preset threshold value, performing over-temperature protection processing.
2. A MOS device temperature detection apparatus according to claim 1, wherein the processor (1) is further configured to perform a current limiting protection process when both the current sampling value and the current calculation value exceed a preset current threshold value.
3. The MOS device temperature detection apparatus of claim 1, wherein the preset resistance value is a typical value corresponding to the MOS device in a specification.
4. The MOS device temperature detection apparatus of claim 1, wherein the preset correspondence relationship includes a resistance versus temperature curve corresponding to the MOS device in a specification.
5. The MOS device temperature detection apparatus according to any one of claims 1 to 4, wherein the MOS device is one of MOS devices in upper and lower arms of any one of three phases of MOS devices;
The voltage detection component (2) and the current detection component (3) are used for respectively detecting the voltage and the current of the MOS device when the driver (5) of the MOS device is started.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111020176.XA CN113933671B (en) | 2021-09-01 | 2021-09-01 | MOS device temperature detection device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111020176.XA CN113933671B (en) | 2021-09-01 | 2021-09-01 | MOS device temperature detection device |
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| CN113933671A CN113933671A (en) | 2022-01-14 |
| CN113933671B true CN113933671B (en) | 2024-08-23 |
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