CN113913919A

CN113913919A - Single crystal silicon furnace

Info

Publication number: CN113913919A
Application number: CN202111198541.6A
Authority: CN
Inventors: 邱香
Original assignee: Shenzhen Yanruixin Mould Plastic Co ltd
Current assignee: Shenzhen Yanruixin Mould Plastic Co ltd
Priority date: 2021-10-14
Filing date: 2021-10-14
Publication date: 2022-01-11
Anticipated expiration: 2041-10-14
Also published as: CN113913919B

Abstract

The invention discloses a monocrystalline silicon furnace, which comprises a furnace body and a rotary lifting driving assembly, wherein a quartz crucible and a heater are arranged in the furnace body; the rotary lifting driving assembly comprises a lifting cylinder, an air guide box, a rotating component and a lifting pipe, wherein the air guide box is arranged outside the furnace body, an air guide cavity is arranged in the air guide box, a first joint communicated with the air guide cavity is arranged on the outer wall of the air guide box, the first joint is used for being connected with a counterweight source device, the lifting pipe is of a hollow long pipe structure, one end of the lifting pipe is communicated with the air guide cavity, the other end of the lifting pipe is provided with a lifting head for closing the opening of the hollow long pipe, and the lifting head extends into the furnace body; the rotating part is used for driving the lifting pipe to rotate, and the output end of the lifting cylinder is connected with the air guide box and used for driving the lifting head to complete a pulling process; the invention provides a single crystal silicon furnace, which overcomes the defect that the conventional crystal is easy to shake when growing under high crystal rotation, and effectively improves the radial uniformity of the crystal.

Description

Single crystal silicon furnace

Technical Field

The application belongs to the technical field of processing of single crystal silicon rods, and particularly relates to a single crystal silicon furnace.

Background

Note that the contents described in this section do not represent all the related art.

Monocrystalline silicon is a relatively active non-metallic element, is an important component of crystal materials, and is in the front of the development of new materials. The solar photovoltaic power generation and heat supply semiconductor material is mainly used as a semiconductor material and utilizes solar photovoltaic power generation, heat supply and the like. Since solar energy has the advantages of cleanness, environmental protection, convenience and the like, in recent thirty years, solar energy utilization technology has been developed greatly in the aspects of research and development, commercial production and market development, and becomes one of the emerging industries of rapid and stable development in the world. Among the processing steps of the silicon single crystal, there is a step of pulling the silicon single crystal in a crystal growth furnace to form a silicon single crystal rod. Specifically, the daughter crystal descends to the central liquid level point of the crucible, a light spot appears when the daughter crystal point reaches the liquid level, the daughter crystal slowly rotates, is pulled upwards, is shouldered, rotates shoulders, normally pulls a rod, and is closed.

In the crystal pulling process, the problem is that when the crystal is pulled and melted back, the crystal needs to be lifted, the crucible is descended, and the lifted crystal is unevenly stressed due to the fact that the surface tension of the liquid adsorbs the crystal, so that the crystal shakes; in addition, after the furnace is shut down, the crystal rises in the furnace for cooling and oxidation, the crystal bar shakes due to the excessive flow rate when argon gas is filled, and the crystal bar shakes, which causes the defect of radial uniformity of the crystal, therefore, a stable production environment is needed to be provided to solve the problems.

Disclosure of Invention

The invention mainly aims at the problems, provides a single crystal silicon furnace, overcomes the defect that the conventional crystal is easy to shake when growing under high crystal rotation, and effectively improves the radial uniformity of the crystal.

In order to achieve the above object, the present invention provides a single crystal silicon furnace comprising:

the furnace comprises a furnace body, wherein a quartz crucible and a heater are arranged in the furnace body; and

the rotary lifting driving assembly comprises a lifting cylinder, an air guide box, a rotating component and a lifting pipe, wherein the air guide box is arranged outside the furnace body, an air guide cavity is formed in the air guide box, a first joint communicated with the air guide cavity is arranged on the outer wall of the air guide box, the first joint is used for being connected with a counterweight source device, the lifting pipe is of a hollow long pipe structure, one end of the lifting pipe is communicated with the air guide cavity, the other end of the lifting pipe is provided with a lifting head for closing the opening of the hollow long pipe, and the lifting head extends into the furnace body; the rotating part is used for driving the lifting pipe to rotate, and the output end of the lifting cylinder is connected with the air guide box and used for driving the lifting head to complete a pulling process.

Furthermore, the number of the pulling tubes and the number of the pulling heads are two, a partition plate is arranged in the air guide box to divide the air guide cavity into a first cavity and a second cavity which are respectively communicated with the two pulling tubes correspondingly, a second joint communicated with the second cavity is further arranged on the outer wall of the air guide box and is used for connecting a counterweight source device, the first joint is communicated with the first cavity, the rotating component comprises a first motor fixed on the outer wall of the air guide box, a first gear and a second gear which are respectively arranged on the outer walls of the two pulling tubes and a third gear which is respectively meshed with the first gear and the second gear, and an output shaft of the first motor is connected with the third gear.

Further, the furnace body comprises an upper furnace cover and a lower furnace cover, a guide cylinder is arranged on the lower furnace cover, and an opening of the guide cylinder faces the quartz crucible and is arranged in an inclined mode.

Furthermore, a partition section for dividing the melting cavity into a first pulling cavity and a second pulling cavity is arranged in the quartz crucible.

Further, the bottom of the quartz crucible is also provided with a rotating table for driving the quartz crucible to rotate, and the other end of the rotating table is connected with a second motor through a driving belt.

Furthermore, a feeding port and a vacuum suction port are also arranged on the outer wall of the upper furnace cover.

Further, the lower furnace cover is provided with a bearing seat, and a ball bearing is arranged between the bearing seat and the quartz crucible.

The furnace further comprises a rack, the counterweight source device is arranged on the rack, and the lifting cylinder, the furnace body and the second motor are all fixed on the rack.

Further, the heater is annularly arranged along the outer wall of the quartz crucible.

Compared with the prior art, the monocrystalline silicon furnace provided by the invention eliminates the influences of traditional crystal pulling and seeding and other shaking and vibration generation, enables the ascending and descending motion in the crystal pulling and seeding process to be stable and smooth and have no impact, reduces the hysteresis quality of overcoming shaking in the traditional weighing mode, and can greatly improve the radial uniformity of crystals.

Drawings

FIG. 1 is a cross-sectional view of a single crystal silicon furnace as disclosed in the present application.

FIG. 2 is a diagram of an equilibrium configuration for resolving crystal wobble as disclosed herein.

Fig. 3 is a schematic structural view of a furnace body disclosed in the present application.

Reference numerals shown in the drawings: 1. a frame; 2. a counterweight source device; 3. a rotary pull-up drive assembly; 4. a furnace body; 5. a quartz crucible; 6. a heater; 7. a draft tube; 8. a rotating table; 9. a drive belt; 10. a second motor; 30. a pulling cylinder; 31. a gas guiding box; 32. a rotating member; 33. lifting the tube; 34. a first joint; 35. a second joint; 36. lifting the pull head; 37. a partition plate; 40. putting a furnace cover; 41. a lower furnace cover; 42. a bearing seat; 43. a ball bearing; 300. a gas conducting cavity; 301. a first cavity; 302. a second cavity; 320. a first motor; 321. a first gear; 322. a second gear; 323. a third gear; 400. a first pull chamber; 401. a second pull chamber; 402. and (4) partitioning.

Detailed Description

The present invention will be described in detail below with reference to the attached drawings, and the technical solutions in the embodiments of the present invention will be clearly and completely described. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.

It will be understood that when an element is referred to as being "secured to" another element, it can be directly on the other element or intervening elements may also be present. When a component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may also be present. When a component is referred to as being "disposed on" another component, it can be directly on the other component or intervening components may also be present. The terms "vertical," "horizontal," "left," "right," and the like as used herein are for illustrative purposes only.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.

The technical scheme of the disclosure will be described by taking a single crystal silicon furnace of the application as an example.

According to an example of the present disclosure, as can be seen from the overall sectional view of fig. 1 and the enlarged views of each part of fig. 2 and fig. 3, the single crystal silicon furnace comprises a frame 1, a furnace body 4 and a rotary lifting driving assembly 3 are mounted and fixed on the frame 1, wherein the furnace body 4 is formed by mutually covering an upper furnace cover 40 and a lower furnace cover 41, a quartz crucible 5 and a heater 6 are arranged in the lower furnace cover 41, the heater 6 is annularly arranged along the outer wall of the quartz crucible 5, and the end part of the heater is connected with a power supply through an electrode column, so that a uniform heating thermal field is provided for the quartz crucible 5, and the heating quality is ensured.

As shown in fig. 1 and 2, the rotary pulling driving assembly 3 includes a pulling cylinder 30, a gas guiding box 31, a rotating component 32 and a pulling pipe 33, wherein the gas guiding box 31 is disposed outside the furnace body 4 and connected to an output end of the pulling cylinder 30, the pulling cylinder 30 drives the gas guiding box 31 to ascend and descend, in this embodiment, a gas guiding cavity 300 is disposed inside the gas guiding box 31, and a first connector 34 communicated with the gas guiding cavity 300 is disposed outside the gas guiding box 31 for connecting with the external counterweight source device 2, so that the external counterweight source device 2 can enter the gas guiding cavity 300 by introducing counterweight gas or counterweight liquid.

With reference to fig. 2, the pulling tube 33 is a hollow long tube structure, one end of which is connected to the air guiding chamber 300 and is connected to the air guiding box 31 via a bearing, and the other end of which is provided with a pulling head 36 for closing the opening of the hollow long tube, wherein the pulling head 36 extends into the furnace body 4; the rotating member 32 is connected to the outside of the pulling tube 33, and the rotating member 32 rotates the pulling tube 33.

It is understood that in the above embodiment, the hollow pulling tube 33 is equivalent to a weighted tube, and when the shaking occurs, the weighted gas or weighted liquid can be provided by the external weighted source device 2 to enter the pulling tube 33 through the first connector 34 and the gas guiding chamber 300, so as to generate a downward pressure to balance the shaking caused by the rotation of the pulling tube 33 or other factors, thereby enabling the ascending and descending movement of the crystal pulling process to be smooth and free from impact.

In the disclosed example, the number of the pulling tubes 33 and the pulling heads 36 is two, a partition plate 37 is arranged in the air guide box 31, the partition plate 37 divides the air guide chamber 300 into a first cavity 301 and a second cavity 302 which are respectively communicated with the two pulling tubes 33, a second joint 35 is further arranged on the outer wall of the air guide box 31, the first joint 34 and the second joint 35 are respectively used for connecting the counterweight source device 2, the first joint 34 is communicated with the first cavity 301, and the second joint 35 is communicated with the second cavity 302.

When a plurality of crystal pulls are carried out simultaneously, the rotating part 32 can comprise a first motor 320 fixed on the outer wall of the gas guide box 31, a first gear 321 and a second gear 322 respectively arranged on the outer walls of the two pulling pipes 33, and a third gear 323 respectively meshed with the first gear 321 and the second gear 322, wherein an output shaft of the first motor 320 is connected with the third gear 323, namely, the first motor 320 can drive the two or more pulling pipes 33 to rotate simultaneously, the phenomenon of different seeding sizes and weights can be generated in the seeding process, and bidirectional balance can be realized by introducing different gases or liquids through a separately arranged counterweight system.

In some embodiments, as shown in fig. 3, a guide cylinder 7 is disposed on the inner wall of the lower furnace cover 41, and an opening of the guide cylinder 7 is inclined toward the quartz crucible 5 to facilitate the guide of the material into the quartz crucible.

For the two pulling tubes 33 and the pulling head 36, in order to avoid interference caused by the seeding process, a partition 402 may be provided in the quartz crucible 5, the partition 402 dividing the melting chamber into a first pulling chamber 400 and a second pulling chamber 401.

Preferably, as shown in fig. 1 and 3, the bottom of the quartz crucible 5 is further provided with a rotating table 8 for driving the quartz crucible 5 to rotate, the other end of the rotating table 8 is connected with a second motor 10 through a driving belt 9, the second motor 10 is fixedly installed on the frame 1, and the quartz crucible 5 is driven to rotate by the second motor 10 during seeding.

Preferably, as shown in fig. 3, the lower furnace cover 41 is provided with a bearing housing 42, and a ball bearing 43 is provided between the bearing housing 42 and the quartz crucible 5.

In addition, a feeding port and a vacuum suction port are also arranged on the outer wall of the upper furnace cover 40.

From a reading of the foregoing detailed description, it will be appreciated by those skilled in the art that the invention can be readily implemented. It should be understood, however, that the intention is not to limit the invention to the particular embodiments described. On the basis of the embodiments disclosed, a person skilled in the art can combine different features at will, so as to implement different solutions, and can combine different forms of additional functions to form other solutions. The scope of protection of the application is therefore only limited by the scope of the appended claims.

The present invention has been described in terms of specific examples, which are provided to aid understanding of the invention and are not intended to be limiting. For a person skilled in the art to which the invention pertains, several simple deductions, modifications or substitutions may be made according to the idea of the invention.

Claims

1. A single crystal silicon furnace, comprising:

2. A single crystal silicon furnace as claimed in claim 1 wherein the number of the pulling tubes and the pulling heads is two, the gas guiding box is internally provided with a partition plate to divide the gas guiding cavity into a first cavity and a second cavity which are respectively communicated with the two pulling tubes, the outer wall of the gas guiding box is further provided with a second joint communicated with the second cavity, the second joint is used for connecting a counterweight source device, the first joint is communicated with the first cavity, the rotating component comprises a first motor fixed on the outer wall of the gas guiding box, a first gear and a second gear which are respectively arranged on the outer wall of the two pulling tubes and a third gear which is respectively meshed with the first gear and the second gear, and an output shaft of the first motor is connected with the third gear.

3. A monocrystalline silicon furnace according to claim 2, wherein the furnace body comprises an upper furnace cover and a lower furnace cover, a guide cylinder is arranged on the lower furnace cover, and an opening of the guide cylinder is obliquely arranged towards the quartz crucible.

4. A single crystal silicon furnace according to claim 2, wherein a partition section partitioning the melting chamber into a first pulling chamber and a second pulling chamber is provided in the quartz crucible.

5. A furnace as claimed in claim 2, wherein the bottom of the crucible is further provided with a rotary table for driving the crucible to rotate, and the other end of the rotary table is connected to a second motor by a driving belt.

6. A monocrystalline silicon furnace according to claim 3, wherein the outer wall of the upper furnace cover is further provided with a feeding port and a vacuum suction port.

7. A monocrystalline silicon furnace according to claim 3 wherein the lower furnace cover is provided with a bearing seat, and a ball bearing is arranged between the bearing seat and the quartz crucible.

8. The monocrystalline silicon furnace of claim 3, further comprising a frame, wherein the counterweight source device is arranged on the frame, and the pulling cylinder, the furnace body and the second motor are all fixed on the frame.

9. A furnace as claimed in claim 2 wherein the heater is arranged annularly along the outer wall of the quartz crucible.