CN113913782B - Self-adaptive hot filament chemical vapor deposition structure and hot filament chemical vapor deposition equipment - Google Patents
Self-adaptive hot filament chemical vapor deposition structure and hot filament chemical vapor deposition equipment Download PDFInfo
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- CN113913782B CN113913782B CN202111236039.XA CN202111236039A CN113913782B CN 113913782 B CN113913782 B CN 113913782B CN 202111236039 A CN202111236039 A CN 202111236039A CN 113913782 B CN113913782 B CN 113913782B
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- 238000004050 hot filament vapor deposition Methods 0.000 title claims abstract description 66
- 238000006243 chemical reaction Methods 0.000 claims abstract description 53
- 238000001816 cooling Methods 0.000 claims description 74
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 35
- 230000003044 adaptive effect Effects 0.000 claims description 8
- 239000000498 cooling water Substances 0.000 claims description 8
- 238000007789 sealing Methods 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 6
- 238000009423 ventilation Methods 0.000 claims description 5
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000005276 aerator Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 31
- 238000000151 deposition Methods 0.000 abstract description 19
- 230000008021 deposition Effects 0.000 abstract description 18
- 229910003460 diamond Inorganic materials 0.000 abstract description 11
- 239000010432 diamond Substances 0.000 abstract description 11
- 238000004519 manufacturing process Methods 0.000 abstract description 8
- 239000012495 reaction gas Substances 0.000 abstract description 8
- 238000005229 chemical vapour deposition Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 8
- 238000000034 method Methods 0.000 description 8
- 238000009434 installation Methods 0.000 description 5
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 239000002826 coolant Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 150000001721 carbon Chemical class 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000017525 heat dissipation Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000003028 elevating effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000002028 premature Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/271—Diamond only using hot filaments
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention discloses a self-adaptive hot wire chemical vapor deposition structure and hot wire chemical vapor deposition equipment, wherein when the self-adaptive hot wire chemical vapor deposition structure works, reaction gas in a reaction cavity reacts with a hot wire to generate chemical vapor deposition on a workpiece, so that a diamond film is formed on the workpiece; the temperature field of the hot wire can be changed along with the repeated reaction, or the requirement for the temperature field can be changed along with the replacement of the workpiece type; at this time, the distance between the workpiece clamping unit and the hot wire mounting fixture can be adjusted through the lifting device, namely, the workpiece clamping unit can be moved towards the direction close to or far from the first wall surface according to the temperature field of the hot wire, so that the height of the workpiece clamping unit is adjusted to match the changed temperature field under the condition that the temperature field of the hot wire is changed, the deposition effect is ensured, and the hot wire mounting fixture does not need to be cleaned or replaced, namely, the self-adaptive hot wire chemical vapor deposition structure and the hot wire chemical vapor deposition equipment can simultaneously ensure the deposition effect and the production efficiency.
Description
Technical Field
The invention relates to the field of hot wire chemical vapor deposition equipment, in particular to a self-adaptive hot wire chemical vapor deposition structure and hot wire chemical vapor deposition equipment.
Background
The hot wire chemical vapor deposition method (Hot filament Chemical Vapor Deposition, HFCVD) is an important method for artificially synthesizing the diamond film, has the advantages of mature process, simple equipment, convenient operation, low preparation cost, high deposition rate, large deposition area and the like, is very suitable for large-scale industrial production, and is widely applied to a series of mechanical processing tools such as diamond coating cutters, drawing dies, mechanical seals and the like and wear-resistant devices in industry in recent years. The hot wire chemical vapor deposition method generally uses hydrogen and methane as gas source gases, and the hydrogen and the methane are mixed according to a certain proportion and introduced into a reaction chamber which is vacuumized in advance, and the chemical reaction is carried out under the action of a high-temperature metal hot wire (higher than 2000 ℃) to generate carbon clusters, then the carbon clusters are further nucleated and slowly grown, and finally a diamond film is formed on the surface of the polished substrate.
Among them, the development and research of hot filament chemical vapor deposition equipment is an important precondition for depositing high quality diamond film. The hot wire chemical vapor deposition equipment in the prior art mainly adopts a mode that a workpiece mounting seat is arranged in a vacuum cavity, hot wire clamping devices are arranged on two sides of the workpiece mounting seat to fix the relative positions of hot wires and workpieces, and finally reaction gas is introduced to realize the hot wire chemical vapor deposition process. In the actual use process, the inventor finds that the temperature field generated by the hot wire can be changed due to the fact that the diamond film is deposited on the hot wire clamping device along with the increase of the use time, so that the deposition effect of the hot wire chemical vapor deposition equipment is reduced; in the prior art, a mode of timely replacing or cleaning the hot wire clamping device is mainly adopted to avoid the decline of the deposition effect, but the mode can certainly influence the whole production flow, so that the production efficiency is low.
Disclosure of Invention
The invention aims to provide a self-adaptive hot wire chemical vapor deposition structure and hot wire chemical vapor deposition equipment, which solve the problem that the conventional hot wire chemical vapor deposition equipment cannot ensure the deposition effect and the production efficiency at the same time.
To achieve the purpose, the invention adopts the following technical scheme:
the self-adaptive hot wire chemical vapor deposition structure comprises a frame and a hot wire mounting fixture, wherein a reaction cavity is formed in the frame;
the hot wire mounting clamp extends towards the inside of the reaction cavity through the first wall surface of the reaction cavity, and a hot wire is clamped at the extending end of the hot wire mounting clamp;
the reaction chamber is internally provided with a workpiece clamping unit, the workpiece clamping unit is connected with a lifting device, and the lifting end of the lifting device is connected with the workpiece clamping unit and used for driving the workpiece clamping unit to move towards a direction close to or far away from the first wall surface.
Optionally, the workpiece clamping unit includes a workpiece placing tray and a cooling base, the cooling base is disposed on one side of the workpiece placing tray, which is close to the first wall surface, the cooling base carries the workpiece placing tray, and cooling water flows in the cooling base;
a water circulation assembly is arranged on one side, away from the workpiece placing plate, of the cooling base, one end of the water circulation assembly is communicated with the cooling base, and the other end of the water circulation assembly penetrates through the first wall surface of the reaction cavity;
the lifting device is arranged outside the reaction cavity, and the lifting end of the lifting device is fixedly connected with the other end of the water circulation assembly.
Optionally, a flow channel is formed in the cooling base, the flow channel comprises a flow channel inlet and a flow channel outlet, and the water circulation assembly comprises a water inlet pipe and a water outlet pipe; the water inlet pipe is communicated with the runner inlet, and the water outlet pipe is communicated with the runner outlet.
Optionally, the caliber of the runner inlet is larger than the caliber of the runner outlet.
Optionally, the reaction cavity corresponds the position of hydrologic cycle subassembly has seted up dodges the hole, hydrologic cycle subassembly passes the one end cover of the first wall of reaction cavity is equipped with sealed thermal-insulated subassembly, sealed thermal-insulated subassembly shutoff dodges the hole is kept away from the one end of reaction cavity.
Optionally, the extending end of the hot wire installation fixture comprises a first hot wire clamping seat and a second hot wire clamping seat which are oppositely arranged; one end of the hot wire is clamped on the first hot wire clamping seat, and the other end of the hot wire is clamped on the second hot wire clamping seat.
Optionally, the hot wire mounting fixture further comprises four cooling supports, and the cooling supports are arranged along the extending direction of the hot wire mounting fixture;
the two cooling supports are respectively arranged at two ends of the first hot wire clamping seat, and one end far away from the first hot wire clamping seat penetrates through the first wall surface of the reaction cavity; the other two cooling supports are respectively arranged at two ends of the second hot wire clamping seat, and one end far away from the second hot wire clamping seat penetrates through the first wall surface of the reaction cavity.
Optionally, the cooling support comprises a heat conducting piece and a cooling pipeline, the cooling pipeline comprises a runner cooling inlet and a runner cooling outlet, and a heat exchange medium flows in the cooling runner;
one end of the heat conducting piece is fixedly connected with the first hot wire clamping seat or the second hot wire clamping seat, and the other end of the heat conducting piece is inserted into the cooling pipeline and exchanges heat with a heat exchange medium in the cooling pipeline.
Optionally, the first hot wire clamping seat is connected with the hot wire through a tension spring.
The hot filament chemical vapor deposition equipment comprises a ventilation device, a vacuumizing device and the self-adaptive hot filament chemical vapor deposition structure; the ventilation device and the vacuumizing device are respectively communicated with the reaction cavity of the self-adaptive hot wire chemical vapor deposition structure.
Compared with the prior art, the invention has the following beneficial effects:
according to the self-adaptive hot wire chemical vapor deposition structure and the hot wire chemical vapor deposition equipment, when the self-adaptive hot wire chemical vapor deposition structure and the hot wire chemical vapor deposition equipment are in operation, reaction gas is introduced into the reaction cavity, then the reaction gas in the reaction cavity reacts with the hot wire, and chemical vapor deposition occurs on a workpiece, so that a diamond film is formed on the workpiece; the temperature field of the hot wire can be changed along with the repeated reaction, or the requirement for the temperature field can be changed along with the replacement of the workpiece type; at this time, the distance between the workpiece clamping unit and the hot wire mounting fixture can be adjusted through the lifting device, namely, the workpiece clamping unit can be moved towards the direction close to or far from the first wall surface according to the temperature field of the hot wire, so that the height of the workpiece clamping unit is adjusted to match the changed temperature field under the condition that the temperature field of the hot wire is changed, the deposition effect is ensured, and the hot wire mounting fixture does not need to be cleaned or replaced, namely, the self-adaptive hot wire chemical vapor deposition structure and the hot wire chemical vapor deposition equipment can simultaneously ensure the deposition effect and the production efficiency.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from these drawings without inventive faculty for a person skilled in the art.
The structures, proportions, sizes, etc. shown in the drawings are shown only in connection with the present disclosure, and are not intended to limit the scope of the invention, since any modification, variation in proportions, or adjustment of the size, etc. of the structures, proportions, etc. should be considered as falling within the spirit and scope of the invention, without affecting the effect or achievement of the objective.
FIG. 1 is a schematic diagram of an overall structure of a self-adaptive hot filament chemical vapor deposition structure according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of an adaptive hot filament chemical vapor deposition structure according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a self-adaptive hot filament chemical vapor deposition structure according to an embodiment of the present invention;
FIG. 4 is a schematic view of the partial enlarged structure of FIG. 3 at A;
FIG. 5 is a schematic top view of a self-adaptive hot filament chemical vapor deposition structure according to an embodiment of the present invention;
FIG. 6 is a schematic cross-sectional view of FIG. 5 taken along line B-B;
FIG. 7 is a schematic cross-sectional view of FIG. 5 taken along line C-C;
fig. 8 is a schematic cross-sectional view of a cooling base according to the first embodiment.
Illustration of: 1. a frame; 11. a reaction chamber; 2. a hot wire mounting fixture; 21. a hot wire; 22. the first hot wire clamping seat; 23. the second hot wire clamping seat; 24. cooling the support; 241. a heat conductive member; 242. a cooling pipe; 243. a flow passage cooling inlet; 244. a flow passage cooling outlet; 25. a tension spring; 3. a work placement tray; 4. cooling the base; 41. a flow passage; 411. a flow channel inlet; 412. a flow channel outlet; 5. a water circulation assembly; 51. a water inlet pipe; 52. a water outlet pipe; 6. sealing the heat insulation assembly; 7. and a lifting device.
Detailed Description
In order to make the objects, features and advantages of the present invention more comprehensible, the technical solutions in the embodiments of the present invention are described in detail below with reference to the accompanying drawings, and it is apparent that the embodiments described below are only some embodiments of the present invention, but not all embodiments of the present invention. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the directions or positional relationships indicated by the terms "upper", "lower", "top", "bottom", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention. It is noted that when one component is referred to as being "connected" to another component, it can be directly connected to the other component or intervening components may also be present.
The technical scheme of the invention is further described below by the specific embodiments with reference to the accompanying drawings.
Referring to fig. 1 to 8, fig. 1 is a schematic overall structure diagram of an adaptive hot wire chemical vapor deposition structure according to an embodiment of the present invention, fig. 2 is a schematic front view of an adaptive hot wire chemical vapor deposition structure according to an embodiment of the present invention, fig. 3 is a schematic partial structure diagram of an adaptive hot wire chemical vapor deposition structure according to an embodiment of the present invention, fig. 4 is a schematic partial enlarged structure diagram of an embodiment of the present invention at a, fig. 5 is a schematic top view of an adaptive hot wire chemical vapor deposition structure according to an embodiment of the present invention, fig. 6 is a schematic cross-sectional structure diagram of an embodiment of the present invention at B-B, fig. 7 is a schematic cross-sectional structure diagram of an embodiment of a cooling base according to an embodiment of the present invention at C-C.
Example 1
The self-adaptive hot wire chemical vapor deposition structure provided by the embodiment is applied to hot wire chemical vapor deposition equipment, particularly to a scene of a diamond film of a cutter, and can adjust the position between a workpiece and the hot wire 21 according to the temperature field change of the hot wire 21 by improving the structure, so that the processing effect of the workpiece is ensured.
As shown in fig. 1 to 2, the self-adaptive hot filament chemical vapor deposition structure provided in this embodiment includes a frame 1 and a hot filament installation fixture 2, a reaction cavity 11 is formed in the frame 1, and a reaction gas is filled in the reaction cavity 11.
The hot wire mounting fixture 2 extends towards the inside of the reaction cavity 11 through the first wall surface of the reaction cavity 11, and the hot wire 21 is clamped at the extending end of the hot wire mounting fixture 2. In the present embodiment, the filament installation jig 2 is extended from the bottom wall of the reaction chamber 11 to the inside, wherein the extended end of the filament installation jig 2 can tension the filament 21 and electrically heat the filament 21.
The reaction cavity 11 is also internally provided with a workpiece clamping unit for clamping a workpiece, the workpiece clamping unit is connected with a lifting device 7, the lifting end of the lifting device 7 is connected with the workpiece clamping unit and is used for driving the workpiece clamping unit to move towards a direction close to or far away from the first wall surface, namely, the workpiece clamping unit can lift relative to the hot wire mounting fixture 2 according to the temperature field of the hot wire 21. In this embodiment, the workpiece refers to a tool, and the workpiece clamping unit is used for loading the tool and has the capability of preventing overheating.
Specifically, in operation, the reaction gas in the reaction chamber 11 reacts with the hot wire 21, chemical vapor deposition occurs on the workpiece, and thus a diamond film is formed on the workpiece; the temperature field of the hot wire 21 changes with the repeated reaction, or the demand for the temperature field changes with the replacement of the workpiece type; at this time, the distance between the workpiece clamping unit and the hot wire mounting fixture 2 can be adjusted through the lifting device 7, namely, the workpiece clamping unit can be moved towards the direction close to or far away from the first wall surface according to the temperature field of the hot wire 21, so that the height of the workpiece clamping unit is adjusted to match the changed temperature field under the condition that the temperature field of the hot wire 21 is changed, the deposition effect is ensured, and the hot wire mounting fixture 2 does not need to be cleaned or replaced, namely, the self-adaptive hot wire chemical vapor deposition structure and the hot wire chemical vapor deposition equipment can simultaneously ensure the deposition effect and the production efficiency.
Illustratively, as the process proceeds, a part of diamond film is deposited on the hot wire mounting fixture 2, the diamond film changes the resistance of the hot wire mounting fixture 2, the hot wire 21 is heated by the electric heating type of the heating reaction gas, and under the condition of changing the resistance, the heat generated by the hot wire 21 changes, and the temperature field also changes; at this time, the change of the temperature field of the hot wire 21 can be judged by an infrared detection mode or a resistance value detection mode, the height of the workpiece clamping unit relative to the hot wire mounting fixture 2 is adjusted according to the change, the temperature environment where the workpiece is located is ensured to be a standard value, and the deposition effect of the hot wire chemical vapor deposition equipment is ensured.
Further, as shown in fig. 2, 5, 6 and 8, the workpiece clamping unit includes a workpiece placing tray 3 and a cooling base 4, the cooling base 4 is disposed at one side of the workpiece placing tray 3 near the first wall surface, the cooling base 4 carries the workpiece placing tray 3, and cooling water flows in the cooling base 4; wherein, offered a plurality of mounting holes on the work piece placement tray 3, the work piece can be placed on the work piece placement tray 3 through this mounting hole, and the cooling water is through cooling base 4 to the cooling of work piece placement tray 3.
The cooling base 4 is kept away from one side of work piece and places the dish 3 and install hydrologic cycle subassembly 5, and the one end and the cooling base 4 intercommunication of hydrologic cycle subassembly 5, the reaction cavity 11 is passed to the other end of hydrologic cycle subassembly 5. The lifting device 7 is arranged outside the reaction cavity 11, and the lifting end of the lifting device 7 is fixedly connected with the other end of the water circulation assembly 5.
In this embodiment, the lifting device 7 refers to a ball screw module driven by a motor, the ball screw module comprises a slide rail, a slide block, a threaded sleeve and a ball screw, the slide block is in sliding connection with the slide rail, the slide block is fixedly connected with the threaded sleeve, the threaded sleeve is sleeved on the ball screw, the ball screw is driven to rotate by the motor, and the slide block is indirectly driven to lift by the threaded sleeve, so that the water circulation assembly 5 is driven to lift. It will be appreciated that other lifting arrangements can be used for the lifting device 7, for example by means of a motor-driven rack and pinion assembly, to effect a height adjustment of the workpiece placement tray 3.
Wherein, the self-adaptation hot wire chemical vapor deposition structure of this embodiment drives hydrologic cycle subassembly 5 through elevating gear 7 to indirectly drive work piece and place the dish 3 and go up and down, hydrologic cycle subassembly 5 had both played the effect that provides the radiating effect for the work piece promptly this moment, played the effect of guaranteeing the deposition effect again, played the effect of simplifying structure and reduce cost promptly, guaranteed the deposition effect of self-adaptation hot wire chemical vapor deposition structure again.
Further, as shown in fig. 6 and 8, a flow passage 41 is formed in the cooling base 4, the flow passage 41 includes a flow passage inlet 411 and a flow passage outlet 412, and the water circulation assembly 5 includes a water inlet pipe 51 and a water outlet pipe 52; the inlet pipe 51 communicates with the flow channel inlet 411, and the outlet pipe 52 communicates with the flow channel outlet 412. In this embodiment, the water circulation assembly 5 adopts a structure that the water inlet pipe 51 is nested in the water outlet pipe 52; in other alternative embodiments, the water inlet pipe 51 and the water outlet pipe 52 may be separately disposed.
In a specific embodiment, as shown in FIG. 8, the aperture of the flow channel inlet 411 is greater than the aperture of the flow channel outlet 412. Illustratively, when cooling water enters the flow channel 41 from the flow channel inlet 411, the cooling water indirectly exchanges heat with the workpiece placement tray 3 through the cooling base 4 and is discharged through the flow channel outlet 412, and due to the reduction of the caliber, the discharging speed of the cooling water is reduced, so that the cooling water can exchange heat with the workpiece placement tray 3 sufficiently in the cooling base 4, and the heat exchange effect of the workpiece placement tray 3 is ensured.
Further, as shown in fig. 2 and 3, the reaction cavity 11 is provided with an avoidance hole corresponding to the position of the water circulation assembly 5, one end of the water circulation assembly 5 penetrating through the reaction cavity 11 is sleeved with a sealing heat insulation assembly 6, and the sealing heat insulation assembly 6 seals one end of the avoidance hole far away from the reaction cavity 11. By sealing the heat insulation assembly 6, the tightness in the reaction cavity 11 can be improved, and the stability of a temperature field in the reaction cavity 11 can be ensured. In addition, in the following embodiment, similarly, the reaction chamber 11 is provided with a avoiding hole at a position corresponding to the cooling support 24, and the cooling support 24 is also sleeved with the sealing and heat insulating assembly 6, so that the stability of the temperature field in the reaction chamber 11 is ensured.
Further, as shown in fig. 3, the extending end of the hot wire mounting fixture 2 includes a first hot wire clamping seat 22 and a second hot wire clamping seat 23; one end of the hot wire 21 is clamped on the first hot wire clamping seat 22, and the other end of the hot wire 21 is clamped on the second hot wire clamping seat 23. The first hot wire clamping seat 22 and the second hot wire clamping seat 23 at least comprise tensioning units positioned at the outermost sides, the tensioning units are used for tensioning the hot wires 21, one side, close to the other tensioning unit, of each tensioning unit is also connected with a guide column, a guide groove is formed in each guide column, and the hot wires 21 sequentially penetrate through the tensioning units at one end, the guide column at the other end and the tensioning unit at the other end; it should be noted that, the guide groove has the effect of limiting the hot wire 21, preventing the hot wire 21 from deviating, and improving the positioning accuracy of the hot wire 21; the tensioning unit comprises a base and a bolt, wherein the base is used for clamping the hot wire 21, the bolt is connected with the base, the head of the bolt can compress the hot wire 21 on the base, meanwhile, the distance between the tensioning units at two sides is larger than the length of the hot wire 21, so that the hot wire 21 is tensioned, when the hot wire 21 is installed, one end of the hot wire 21 is installed on the left base and compressed on the base through the bolt, then the other end of the hot wire 21 passes through a guide groove on a guide post at the left side and then passes through a guide groove on a guide post at the right side, and finally, the hot wire 21 is compressed on the right base through the bolt, the distance between the bases at two sides is larger than the length of the hot wire 21, so that the hot wire 21 is stretched and deformed, and the tensioning effect of the hot wire 21 is ensured; in addition, the bolt has conductivity, and the power supply can be connected to the hot wire 21 through the electric wire, so that when the bolt works, the power supply energizes the hot wire 21 through the electric wire and the bolt, the hot wire 21 generates heat under the thermal resistance effect, and the reaction gas generates chemical reaction under the action of the heat and is deposited on the workpiece of the workpiece placing plate 3.
In a specific embodiment, as shown in fig. 4, 5 and 7, the hot wire mounting fixture 2 further includes four cooling abutments 24. The cooling support 24 is provided along the extending direction of the hot wire installation jig 2.
The two cooling supports 24 are respectively arranged at two ends of the first hot wire clamping seat 22, and one end far away from the first hot wire clamping seat 22 passes through the reaction cavity 11; the other two cooling supports 24 are respectively installed at two ends of the second hot wire clamping seat 23, and one end far away from the second hot wire clamping seat 23 penetrates through the reaction cavity 11. By adopting the layout mode, the middle hot wire 21 can be cooled through the first hot wire clamping seat 22 or the second hot wire clamping seat 23 from two sides respectively, so that the first hot wire clamping seat 22 or the second hot wire clamping seat 23 is prevented from being deformed due to overheating, the condition of temperature field deviation is avoided, and the deposition effect is ensured.
It should be understood that only two cooling support 24 may be adopted, where one cooling support 24 is disposed at the left end of the first filament clamping seat 22, and the other cooling support 24 is disposed at the right end of the second filament clamping seat 23, and the whole is diagonally arranged, so that the method is suitable for the situation that the number of filaments 21 is small, and can reduce the cost of the adaptive filament chemical vapor deposition structure.
Further, as shown in fig. 7, the cooling support 24 includes a heat conductive member 241 and a cooling duct 242, and the cooling duct 242 includes a flow passage cooling inlet 243 and a flow passage cooling outlet 244, in which a heat exchange medium flows.
One end of the heat conducting piece 241 is fixedly connected with the first hot wire clamping seat 22 or the second hot wire clamping seat 23, and the other end of the heat conducting piece 241 is inserted into the cooling pipeline 242 and exchanges heat with a heat exchange medium in the cooling pipeline 242. The heat conducting piece 241 is used for transmitting the cooling capacity of the heat exchange medium to the first hot wire clamping seat 22 or the second hot wire clamping seat 23, so that the cooling medium can be prevented from leaking on the first hot wire clamping seat 22 or the second hot wire clamping seat 23 accidentally, the occurrence of short circuit is further avoided, and the stability of the self-adaptive hot wire chemical vapor deposition structure is improved; meanwhile, the heat conduction of the heat conduction piece 241 can enable the temperature of the heat conduction piece 241 to gradually rise along the direction away from the cooling pipeline 242, so that the premature transfer of the cold in the cooling medium to the first hot wire clamping seat 22 or the second hot wire clamping seat 23 can be avoided, the cooling medium is prevented from interfering with the temperature field of the hot wire 21, and the deposition effect of the hot wire chemical vapor deposition structure is ensured.
Further, as shown in fig. 4, the first filament clamping seat 22 is connected with the filament 21 through a tension spring 25. The tension spring 25 tightens the hot wire 21 to ensure the tightening amount of the hot wire 21, thereby avoiding the deviation of the temperature field. It should be understood that the tension spring 25 may also be disposed between the second filament holder 23 and the filament 21.
In summary, the hot filament chemical vapor deposition structure of the embodiment can simultaneously ensure the deposition effect and the production efficiency, and has the advantages of high stability, low cost, simple structure, good heat dissipation effect, strong adaptability and the like.
Example two
The embodiment provides hot filament chemical vapor deposition equipment, which comprises a ventilation device, a vacuumizing device and a self-adaptive hot filament chemical vapor deposition structure as in the first embodiment; the ventilation device and the vacuumizing device are respectively communicated with the reaction cavity of the self-adaptive hot wire chemical vapor deposition structure. In the first embodiment, a specific structure and technical effects related to the self-adaptive hot filament chemical vapor deposition structure are described, and the hot filament chemical vapor deposition apparatus in this embodiment refers to the structure and has the technical effects as well.
In summary, the hot filament chemical vapor deposition device of the embodiment can ensure the deposition effect and the production efficiency at the same time, and has the advantages of high stability, low cost, simple structure, good heat dissipation effect, strong adaptability and the like.
The above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some technical features thereof can be replaced by equivalents; such modifications and substitutions do not depart from the spirit and scope of the technical solutions of the embodiments of the present invention.
Claims (6)
1. The self-adaptive hot wire chemical vapor deposition structure is characterized by comprising a frame (1) and a hot wire mounting clamp (2), wherein a reaction cavity (11) is formed in the frame (1);
the hot wire mounting clamp (2) extends towards the inside of the reaction cavity (11) through the first wall surface of the reaction cavity (11), and a hot wire (21) is clamped at the extending end of the hot wire mounting clamp (2);
a workpiece clamping unit is further arranged in the reaction cavity (11), the workpiece clamping unit is connected with a lifting device (7), and the lifting end of the lifting device (7) is connected with the workpiece clamping unit and is used for driving the workpiece clamping unit to move towards a direction approaching or far away from the first wall surface;
the extending end of the hot wire mounting clamp (2) comprises a first hot wire clamping seat (22) and a second hot wire clamping seat (23) which are oppositely arranged; one end of the hot wire (21) is clamped on the first hot wire clamping seat (22), and the other end of the hot wire (21) is clamped on the second hot wire clamping seat (23);
the hot wire mounting fixture (2) further comprises four cooling supports (24), and the cooling supports (24) are arranged along the extending direction of the hot wire mounting fixture (2);
the two cooling supports (24) are respectively arranged at two ends of the first hot wire clamping seat (22), and one end far away from the first hot wire clamping seat (22) penetrates through the first wall surface of the reaction cavity (11); the other two cooling supports (24) are respectively arranged at two ends of the second hot wire clamping seat (23), and one end far away from the second hot wire clamping seat (23) penetrates through the first wall surface of the reaction cavity (11);
the cooling support (24) comprises a heat conducting piece (241) and a cooling pipeline (242), the cooling pipeline (242) comprises a runner cooling inlet (243) and a runner cooling outlet (244), and a heat exchange medium flows in a cooling runner;
one end of the heat conducting piece (241) is fixedly connected with the first hot wire clamping seat (22) or the second hot wire clamping seat (23), and the other end of the heat conducting piece (241) is inserted into the cooling pipeline (242) and exchanges heat with a heat exchange medium in the cooling pipeline (242); the workpiece clamping unit comprises a workpiece placing disc (3) and a cooling base (4), a flow channel (41) is formed in the cooling base (4), the flow channel (41) comprises a flow channel inlet (411) and a flow channel outlet (412), and the caliber of the flow channel inlet (411) is larger than that of the flow channel outlet (412).
2. The self-adaptive hot wire chemical vapor deposition structure according to claim 1, wherein the cooling base (4) is arranged on one side of the workpiece placement plate (3) close to the first wall surface, the cooling base (4) carries the workpiece placement plate (3), and cooling water flows in the cooling base (4);
a water circulation assembly (5) is arranged on one side, far away from the workpiece placing plate (3), of the cooling base (4), one end of the water circulation assembly (5) is communicated with the cooling base (4), and the other end of the water circulation assembly (5) penetrates through a first wall surface of the reaction cavity (11);
the lifting device (7) is arranged outside the reaction cavity (11), and the lifting end of the lifting device (7) is fixedly connected with the other end of the water circulation assembly (5).
3. The adaptive hot filament chemical vapor deposition structure according to claim 2, wherein the water circulation assembly (5) comprises a water inlet pipe (51) and a water outlet pipe (52); the water inlet pipe (51) is communicated with the runner inlet (411), and the water outlet pipe (52) is communicated with the runner outlet (412).
4. The self-adaptive hot wire chemical vapor deposition structure according to claim 2, wherein the reaction cavity (11) is provided with an avoidance hole corresponding to the position of the water circulation assembly (5), one end of the water circulation assembly (5) penetrating through the first wall surface of the reaction cavity (11) is sleeved with a sealing heat insulation assembly (6), and the sealing heat insulation assembly (6) seals one end of the avoidance hole far away from the reaction cavity (11).
5. The self-adaptive hot wire chemical vapor deposition structure according to claim 1, wherein the first hot wire clamping seat (22) is connected with the hot wire (21) through a tension spring (25).
6. A hot filament chemical vapor deposition apparatus comprising an aerator, a vacuum extractor, and an adaptive hot filament chemical vapor deposition structure according to any one of claims 1-5; the ventilation device and the vacuumizing device are respectively communicated with the reaction cavity of the self-adaptive hot wire chemical vapor deposition structure.
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|---|---|---|---|
| CN202111236039.XA CN113913782B (en) | 2021-10-22 | 2021-10-22 | Self-adaptive hot filament chemical vapor deposition structure and hot filament chemical vapor deposition equipment |
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| CN202111236039.XA CN113913782B (en) | 2021-10-22 | 2021-10-22 | Self-adaptive hot filament chemical vapor deposition structure and hot filament chemical vapor deposition equipment |
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109371380A (en) * | 2018-12-05 | 2019-02-22 | 中国科学院金属研究所 | A kind of hot-wire chemical gas-phase deposition device of Multifunctional diamond film |
| CN213388887U (en) * | 2020-08-31 | 2021-06-08 | 广东鼎泰机器人科技有限公司 | Coating machine |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109371380A (en) * | 2018-12-05 | 2019-02-22 | 中国科学院金属研究所 | A kind of hot-wire chemical gas-phase deposition device of Multifunctional diamond film |
| CN213388887U (en) * | 2020-08-31 | 2021-06-08 | 广东鼎泰机器人科技有限公司 | Coating machine |
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