CN113909700B - Multilayer structure with embedded circuit inside and non-contact laser processing method thereof - Google Patents

Multilayer structure with embedded circuit inside and non-contact laser processing method thereof Download PDF

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CN113909700B
CN113909700B CN202111267641.XA CN202111267641A CN113909700B CN 113909700 B CN113909700 B CN 113909700B CN 202111267641 A CN202111267641 A CN 202111267641A CN 113909700 B CN113909700 B CN 113909700B
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layer
light absorption
multilayer structure
substrate
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CN113909700A (en
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黄永安
余海洋
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Huazhong University of Science and Technology
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Huazhong University of Science and Technology
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36Removing material
    • B23K26/362Laser etching
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B23MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23KSOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00Working by laser beam, e.g. welding, cutting or boring
    • B23K26/08Devices involving relative movement between laser beam and workpiece
    • B23K26/082Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head

Abstract

The invention belongs to the technical field related to laser processing and circuit preparation, and discloses a multilayer structure with an embedded circuit inside and a non-contact laser processing method thereof, wherein the non-contact laser processing method comprises the following steps: (1) providing a composite film, wherein the composite film is of a laminated structure and comprises a substrate, a light-absorbing polymerization layer formed on the substrate and an encapsulation layer formed on the light-absorbing polymerization layer; (2) and scanning the composite film by adopting laser, irradiating the light absorption polymerization layer after the laser penetrates through the substrate, carbonizing and decomposing the area of the light absorption polymerization layer irradiated by the laser, and forming a patterned conductive circuit by using residues obtained by carbonizing and decomposing, so that the aim that the area of the light absorption polymerization layer is selectively carbonized by the laser in the interlayer to form the patterned conductive circuit is realized, and the embedded circuit is prepared in the multilayer structure. The method has simple process and lower cost, and solves the problem of electrode fracture caused by larger stamp deformation and stress mismatching effect in the packaging process in the traditional transfer printing process.

Description

Multilayer structure with embedded circuit inside and non-contact laser processing method thereof
Technical Field
The invention belongs to the technical field related to laser processing and circuit preparation, and particularly relates to a multilayer structure with an embedded circuit inside and a non-contact laser processing method thereof.
Background
The processing of different material surfaces to form conductive circuits plays a very important role both in academic research and in industrial technology. As early as the fifties of the last century, the uk scientists g.w.a.dummer first proposed the concept of integrated circuits, which in the last few years became realistic by Clair Kilby and Robert Noyce. The core of integrated circuit fabrication is the interconnection of different devices, different materials and different structures on a silicon substrate by a certain process to achieve their corresponding functions. With the continuous progress of technology, flexible electronics and curved electronics have come into play, and the use of a transfer process to transfer a circuit prepared by an IC process on a silicon substrate to a polymer substrate to achieve the flexibility and curvature of the circuit has received much attention and development. In recent years, the company LPKF, germany, has proposed a novel three-dimensional circuit processing technique, which can process a conductive circuit on a plastic surface. While the new processing methods of flexible electronics, curved electronics and three-dimensional circuitry have been proposed to some extent to overcome the limitations of conventional IC processes that can only form circuits on silicon substrates, they have introduced a series of inherent disadvantages: the multi-layer structure has the advantages of easy breakage of electrodes in the transfer printing and packaging processes, difficult micro-electrode transfer printing alignment, higher and complex process cost, larger environmental pollution, difficult broken electrode repair and the like.
The existing process faces a series of problems when a circuit is prepared on the surface of a polymer, wherein the more remarkable problems are as follows: when a stamp is used to transfer an electrode prepared on a silicon substrate using a conventional process to a polymer surface, the stamp is separated from the silicon substrate by a very large amount of deformation due to its small modulus, resulting in the deformation of the metal electrode adhered to the stamp exceeding its strain fracture limit (-1%); for interconnected microelectrodes, it is very difficult to align using a stamp to transfer them from a source substrate prepared using conventional IC processes to a target substrate, and small deviations will cause the entire circuit to fail; the elastic modulus and the thermal expansion coefficient of the polymer and the metal electrode are greatly different, and debonding and slipping are easily caused at the interface of the metal and the polymer due to the effects of stress concentration and thermal stress mismatching in the packaging process; when electrode breakage occurs in the transfer process, the broken electrode can be replaced, if electrode breakage occurs in the packaging process, unsealing and welding treatment are needed, and the destructive repair method is complex in process and high in cost.
Disclosure of Invention
In order to overcome the defects or the improvement requirements of the prior art, the invention provides a multilayer structure with an embedded circuit inside and a non-contact laser processing method thereof, wherein the laser processing method is used for preparing a composite film sample, and adjusting the energy density, the scanning speed and the irradiation frequency of laser so as to ensure that the laser penetrates through a laser transparent material of a composite film and then carbonizes a light-absorbing polymer inside a layer to obtain a patterned conductive circuit.
To achieve the above object, according to one aspect of the present invention, there is provided a non-contact laser processing method of a multi-layer structure having an embedded circuit therein, the method mainly comprising the steps of:
(1) providing a composite film, wherein the composite film is a laminated structure and comprises a substrate, a light-absorbing polymerization layer formed on the substrate and an encapsulation layer formed on the light-absorbing polymerization layer;
(2) and scanning the composite film by using laser, irradiating the light absorption polymer layer after the laser penetrates through the substrate, carbonizing and decomposing the area of the light absorption polymer layer irradiated by the laser, and forming a patterned conductive circuit by using residues obtained by carbonizing and decomposing, so that the area of the light absorption polymer layer is selectively carbonized by the laser inside the interlayer to form the patterned conductive circuit, thereby obtaining the multilayer structure.
Further, the laser power density of the laser is more than 3000W/cm 2 The scanning speed is 1 mm/s-4 mm/s.
Further, the laser used in the step (2) is an infrared laser with the wavelength of 808 nm.
Further, the material of the substrate is quartz glass; the packaging layer is made of epoxy resin; the material of the light-absorbing polymeric layer is PI.
Further, a wire is arranged at the edge of the polymerization layer.
Further, another light absorption polymerization layer is further arranged on the surface, away from the substrate, of the packaging layer, and another substrate is formed on the surface, away from the substrate, of the corresponding light absorption polymerization layer; and a light absorption polymerization connecting column is formed in the packaging layer and connects the two light absorption polymerization layers, namely the corresponding composite film has a five-layer structure.
Further, in the step (2), one substrate of the composite film is irradiated by laser, so that the corresponding light-absorbing polymeric layer is partially carbonized to form a patterned conductive circuit; and then, turning over the composite film, selectively carbonizing another light absorption polymer layer by using laser to form a patterned conductive circuit, and electrically connecting the carbonized light absorption polymer connecting column with the upper conductive circuit and the lower conductive circuit so as to interconnect the conductive circuits.
Further, scanning the light-absorbing polymerThe laser power density adopted by the area outside the combined connecting column is 3183W/cm 2 The scanning speed was 2 mm/s.
Further, when the laser is irradiated to the light absorbing polymer connection column, the laser power density and the scanning speed are respectively adjusted to 8542W/cm 2 And 1 mm/s.
According to another aspect of the present invention, there is provided a multilayer structure having embedded circuitry therein, characterized in that: the multilayer structure is prepared by adopting the non-contact laser processing method of the multilayer structure with the embedded circuit inside.
Generally, compared with the prior art, the multilayer structure with the embedded circuit therein and the non-contact laser processing method thereof provided by the invention have the following beneficial effects:
1. the laser penetrates through the substrate and then irradiates the light absorption polymerization layer, the area of the light absorption polymerization layer irradiated by the laser is carbonized and decomposed, and the residue obtained by carbonization and decomposition forms a patterned conductive circuit, so that the problem that the microelectrode is difficult to align in the transfer printing process can be solved, meanwhile, the process is simple and convenient, and the environmental pollution in the preparation process is small.
2. When the patterned conductive circuit is prepared, the conductive circuit can be prepared by firstly packaging and then using a laser embedded processing mode, so that the problem that an electrode is easy to break in the packaging process due to the effect of thermal stress mismatch in the traditional processing method is solved, the method avoids using an expensive metal electrode, and the process cost is reduced.
3. The method can process and generate the conductive circuit in a large area, and meanwhile, the selection range of the laser transparent material, the light absorption polymer and the laser type for forming the patterned conductive circuit through carbonization is wide.
4. The method provided by the invention can effectively form a circuit in a complex curvature component, and meanwhile, after the electrode is broken, the circuit can be repaired by adopting a laser embedded processing method on the premise of not damaging the structural integrity of the circuit.
5. The patterned conductive circuit obtained by the invention has the properties of high temperature resistance, stability, strong acid and alkali resistance and the like, and has potential application in the fields of biosensing, soft robots, intelligent skins, laser repair circuits and the like.
6. The laser power density of the laser is more than 3000W/cm 2 The scanning speed is 1 mm/s-4 mm/s, and the proper laser energy and scanning speed ensure that the residues obtained by carbonizing and decomposing the light-absorbing polymer have better conductivity, and the light-absorbing polymer which is not irradiated by the laser is still the original material, so that the light-absorbing polymer material is carbonized in the interlayer by the laser to form a patterned conductive circuit.
Drawings
Fig. 1 is a schematic flow chart of a laser processing method according to the present invention for preparing a multilayer structure embedded with a single-layer patterned conductive circuit (a) → (b) → (c) → (d);
fig. 2 (a) → (b) → (c) → (d) → (e) → (f) are schematic illustrations of a process flow for preparing a multilayer structure having a multilayer interconnect patterned conductive circuit embedded therein by the laser processing method of the present invention;
FIG. 3 is a graph showing the relationship between the resistance value after PI carbonization and the laser power density and scanning speed;
fig. 4 (a) and (b) are a perspective view and an exploded view of a multi-layered structure with a single-layered patterned conductive circuit embedded therein, respectively;
FIG. 5 is a Raman spectrum of a laser-carbonized PI product;
fig. 6 (a) and (b) are a perspective view and an exploded view of a multilayer structure with a multilayer interconnection patterned conductive circuit embedded therein, respectively.
The same reference numbers will be used throughout the drawings to refer to the same or like elements or structures, wherein: the sensor comprises a substrate 1, a light absorption polymerization layer 2, an encapsulation layer 3, a strain sensor circuit 4, a mask 5, a light absorption polymerization connecting column 6, an inductance capacitance circuit 7 and a thin wire 8.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention is further described in detail below with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention. In addition, the technical features involved in the embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
The invention provides a laser processing method of a multilayer structure with an embedded circuit, which is characterized in that a sample of the multilayer structure is firstly prepared, the sample can be a plane, a curved surface or a three-dimensional structure according to the requirement, laser irradiates the surface of a light absorption polymer in an interlayer through a laser transparent material on a top layer to carbonize the light absorption polymer to form a conductive circuit, the difficult problem of microelectrode transfer printing alignment is avoided, the problems of electrode fracture caused by large stamp deformation and stress mismatching effect in the packaging process in the traditional transfer printing process are solved, meanwhile, the processing sequence of processing the electrode after packaging can simplify the process, the laser has small pollution to the environment, and the laser processing method is a green processing mode. In addition, the method for processing the conductive circuit in the laser embedded mode can directly form the conductive circuit in the interlayer, so that broken electrodes are connected again, and lossless repair is achieved. Due to the advantages of the aspects, the laser embedded processing conductive circuit can be potentially applied to the fields of biosensing, soft robots, intelligent skin, laser repair circuits and the like.
The laser processing method mainly comprises the following steps:
step one, preparing a composite film.
The composite film is of a laminated structure and comprises a substrate, a light absorption polymerization layer formed on the substrate and an encapsulation layer formed on the light absorption polymerization layer, wherein two thin wires are arranged at the edge of the light absorption polymerization layer. In other embodiments, another light-absorbing polymeric layer is further disposed on a surface of the encapsulation layer away from the substrate, and another substrate is formed on a corresponding surface of the light-absorbing polymeric layer away from the substrate; and a light absorption polymerization connecting column is formed in the packaging layer and connects the two light absorption polymerization layers.
The preparation of the composite film for preparing the single-layer conductive circuit (the single-layer conductive circuit composite film for short) comprises the following steps:
firstly, a substrate is cleaned, and the material of the substrate can be penetrated by laser with specific wavelength and then irradiated to the interface of the substrate and the light absorption polymerization layer. Next, a light absorbing polymeric layer is prepared on the surface of the substrate, and two thin wires are placed at the edges of the light absorbing polymeric layer. For a plane substrate, spin-coating a layer of light-absorbing polymer material on the surface of the substrate by adopting a spin-coating mode to obtain a light-absorbing polymer layer; and for a curved substrate, depositing a layer of light-absorbing polymer on the surface of the substrate in a spraying manner to obtain a light-absorbing polymeric layer. The light-absorbing polymeric layer is capable of absorbing laser light of a particular wavelength to cause carbonization. And finally, depositing a layer of packaging material on the surface of the light absorption polymerization layer to obtain a packaging layer, thereby obtaining the single-layer conductive circuit composite film. The material of the packaging layer has good waterproof and dustproof characteristics, and the material of the substrate also has good packaging characteristics, so that the composite film can be prepared into a sandwich circuit with a good self-packaging effect.
The preparation method of the composite film for preparing the multilayer interconnected conductive circuit (the multilayer interconnected conductive circuit composite film for short) comprises the following steps:
firstly, preparing a light-absorbing polymeric layer on a substrate in the manner described above to obtain a two-layer structure; and then, attaching a mask with a single hole on the surface of a light absorption polymer layer with a two-layer structure, depositing a layer of light absorption polymer material on the mask, removing the mask to ensure that only the position corresponding to the single hole is deposited with the light absorption polymer material, and then curing to form a light absorption polymer connecting column. And then, preparing an encapsulation layer on the surface of the light absorption polymerization layer with the light absorption polymerization connecting column formed on the surface (the encapsulation layer mainly plays a role of bonding an upper layer and a lower layer), wherein the light absorption polymerization connecting column is positioned in the encapsulation layer. And finally, attaching the other light absorption polymerization layer with a two-layer structure to the packaging layer to obtain the five-layer multilayer interconnected conductive circuit composite film.
In this embodiment, the material of the encapsulation layer is PDMS, PET, epoxy resin or Ecoflex, preferably epoxy resin, and the light absorbing polymer may be PI, PBI, PES, or an organic polymer doped with nickel or copper, preferably PI; the substrate is made of silicon dioxide, sapphire, quartz glass, glass sheets, PET, PU, PE, PDMS or Ecoflex.
And step two, scanning the composite film by adopting laser to obtain the multilayer structure.
Specifically, the composite film is scanned with laser light in accordance with the shape of the circuit to be prepared, the light-absorbing polymeric layer region irradiated with the laser light undergoes carbonization decomposition, and the residue obtained by the carbonization decomposition forms a patterned conductive circuit. Wherein, the residue obtained by carbonization and decomposition has better conductivity.
The composite film is placed on a working table surface of a laser XY motion platform, the height position of the XY motion platform is firstly adjusted, then the horizontal position of the XY motion platform is adjusted, a laser spot is located at the position of one thin wire of the composite film, two ends of a laser scanning pattern are overlapped with the two thin wires, and therefore a circuit in the interlayer can be connected with external equipment through the thin wires.
For the single-layer conductive circuit composite film, turning on a laser, adjusting the laser to a required energy density value, and selecting a proper scanning speed and an appropriate irradiation frequency; thereafter, laser scanning may be performed. Laser can penetrate through the substrate on the top to irradiate the surface of the light absorption polymer layer in the interlayer, the irradiated area of the light absorption polymer layer can absorb the energy of photons to generate photothermal or photochemical decomposition, when the laser energy and the scanning speed are proper, the residue obtained by carbonizing and decomposing the light absorption polymer has better conductivity, and the light absorption polymer which is not irradiated by the laser is still the original material, so that the light absorption polymer material is carbonized in the interlayer by the laser to form a patterned conductive circuit.
For the multilayer interconnected conductive circuit composite film, firstly, laser is adopted to irradiate one substrate of the composite film, so that a patterned conductive circuit is generated at the interface of the substrate and the light absorption polymerization layer, then the composite film is turned over, and laser is adopted to carbonize the interface of the other substrate and the light absorption polymerization layer. In order to realize the interconnection of two layers of conductive circuits, when laser irradiates a light absorption polymer connecting column in a packaging layer, the power of a laser is increased, and meanwhile, the scanning speed is reduced, so that the ablation depth of a light absorption polymer is increased, the light absorption polymer at the cross-linking part is completely ablated and penetrated, and the interconnection of multiple layers of conductive circuits is realized. The material of the substrate is preferably quartz glass.
The single-layer patterned conductive circuit is preferably a planar strain sensor, and the multi-layer interconnected conductive circuit is preferably a planar inductor and a planar capacitor; the laser power density of the laser is more than 3000W/cm 2 The scanning speed is 1 mm/s-4 mm/s; the laser used can be ultraviolet laser, infrared laser or laser with visible light wave band, preferably infrared laser with wavelength of 808 nm; the patterned conductive circuit may be a dot, a line, a dot plane, or a plane; the height position of the XY motion platform can be at any position, so that the focal plane of the laser can be positioned on the surface of the light-absorbing polymer in the interlayer, or the focal plane of the laser can be positioned at other positions, and the height position of the XY motion platform is preferably that the focal plane of the laser is positioned on the interface of the substrate and the light-absorbing polymer layer in the interlayer.
The invention also provides a multilayer structure with an embedded circuit inside, which is characterized in that: the multilayer structure is prepared by adopting the non-contact laser processing method of the multilayer structure with the embedded circuit inside.
The present invention will be described in further detail with reference to specific examples. The method can be used for laser embedded processing of the strain sensor and the multilayer interconnected planar inductor and planar capacitor in the multilayer structure.
Example 1
For the single-layer strain sensor, firstly, a layer of PI is spin-coated on a cleaned quartz glass sheet by adopting a spin-coating process, two thin wires are placed at the edge of the cleaned quartz glass sheet, and then a layer of epoxy resin film is spin-coated on the surface of the obtained quartz glass/PI film by continuously adopting the spin-coating process; then, the obtained film sample is placed on an XY motion platform of a laser experiment table, the height position and the horizontal position of the XY motion platform are adjusted to enable a laser spot to be located at the position of one thin wire of the film sample, and two ends of a laser scanning pattern are overlapped with the two thin wires; then, the energy density and the scanning speed of the laser are adjusted, the laser irradiates the surface of the light absorption polymer in the interlayer through the laser transparent substrate material on the top, the irradiated polymer absorbs the energy of photons to generate photothermal or photochemical decomposition, the residue obtained by the carbonization decomposition of the light absorption polymer has better conductivity, and the light absorption polymer which is not irradiated by the laser is still the original material, so that the carbonization of the light absorption polymer material in the interlayer by the laser can be realized to form a patterned conductive circuit. Referring to fig. 1, a laser processing method of a multilayer structure embedded with a strain sensor circuit according to embodiment 1 of the present invention includes the following steps:
(1) soaking the unsealed quartz glass substrate (namely the substrate 1) in a culture dish with the ratio of concentrated sulfuric acid to hydrogen peroxide being 2:1 for 10 minutes, then clamping quartz glass in the culture dish by using tweezers and washing the quartz glass by using deionized water, then placing the washed quartz glass in the culture dish containing the deionized water, then placing the culture dish containing the deionized water in an ultrasonic cleaning machine for continuous cleaning, then placing the obtained quartz glass in the culture dish containing ethanol, continuously placing the culture dish containing the ethanol in the ultrasonic cleaning machine for cleaning, finally clamping the quartz glass by using the tweezers, and drying the quartz glass by using nitrogen for later use.
(2) Placing the cleaned quartz glass at the center of a spin coater, dripping a PI solution by using a dropper, setting spin coating parameters of the spin coater, starting the spin coater to spin coat, then placing the spin coater on a hot plate to cure to obtain a light absorption polymerization layer 2, and finally placing two thin wires 8 at the edge of the PI.
(3) Mixing the epoxy resin AB sealant according to the proportion of 1:1, then uniformly stirring, and then spin-coating the prepared mixed solution on the surface of a structure formed by quartz glass and PI on a spin coater to form a packaging layer 3.
(4) A composite film sample formed by quartz glass, PI and epoxy resin is placed on a working table surface of an XY motion platform of a laser experiment table, the height position of the XY motion platform is adjusted, laser changes the light direction through a reflector and then is focused on the PI surface in a film sample interlayer through a converging lens, and after the height position and the horizontal position of the XY motion platform are adjusted, a CAD model of a strain sensor can be directly input into the motion platform for scanning. The laser of this embodiment is a spot laser, and the relationship curve between the resistance value after PI carbonization and the laser power density and the scanning speed is shown in fig. 3, and for a line spot laser, a mask having a strain sensor pattern is attached to the surface of quartz glass, and then scanning is performed.
(5) The laser was turned on and the energy density adjusted to 3183W/cm 2 The scanning speed was 2 mm/s. The laser can penetrate through the laser transparent material on the top to irradiate the surface of the light absorption polymer PI in the interlayer, the irradiated PI can absorb the energy of photons to generate photothermal or photochemical decomposition, substances obtained by PI carbonization have good conductivity, and the PI which is not irradiated by the laser is still the original material, so that the PI is carbonized in the interlayer by the laser to form a circuit of a strain sensor, namely a strain sensor circuit 4.
(6) As shown in fig. 4, the strain sensor circuit 4 obtained by laser scanning can realize connection between the interlayer internal circuit and an external device through two preset thin wires 8, so that the corresponding functions can be realized.
For analyzing the multilayer structure, the laser transparent material on the surface layer of the composite film structure is peeled off, the strain sensor circuit in the interlayer is placed on an objective table of a Raman spectrometer, the wavelength of a Raman light source is 532nm, the Raman spectrum at the position of laser carbonization PI is obtained as shown in figure 5, the spectrum has three peaks of a D peak (1350), a G peak (1570) and a 2D peak (2680), wherein the D peak is a defect peak and represents the defect degree of the generated graphene, and the G peak is sp 2 The 2D peak is formed by two phonon double resonance transitions of opposite momentum in the carbon atoms. Infrared laser carbonization PI generation with wavelength of 808nmThe characteristic peak of the substance is the same as that of graphene, and thus it is known that the substance formed by carbonizing PI with 808nm infrared laser is graphene.
Example 2
Referring to fig. 2, a laser processing method for a multilayer structure with embedded multilayer interconnected planar inductor and planar capacitor according to embodiment 2 of the present invention mainly includes the following steps:
(1) cleaning quartz glass by adopting a method in the step (1) of processing a single-layer patterned conductive circuit in an embedded mode by using laser and preparing two quartz glass/PI samples by adopting a spin coating method in the step (2);
(2) and sticking a mask with a single hole on the surface of the PI of one sample, spin-coating a layer of PI on the surface of the PI, tearing off the mask to ensure that only the position of the single hole contains the PI, and then curing to obtain the light-absorbing polymerization connecting column 6.
(3) Preparing epoxy resin by adopting the method in the step (3) of processing the single-layer patterned conductive circuit in the laser embedded mode, then spin-coating a layer of epoxy resin on the surface of the quartz glass/PI sample, and attaching the other quartz glass/PI prepared in the step (1) to the surface of the sample to obtain a sample with a five-layer structure.
(4) The laser was turned on and the energy density was adjusted to 3183W/cm 2 The scanning speed is 2mm/s, one piece of quartz glass of a sample is irradiated by laser, so that a planar inductance coil, one end face of a flat capacitor and a lead are generated at the interface of the quartz glass and a PI (polyimide), then the other piece of quartz glass and the surface of the PI are carbonized by the laser to form the other end face of the flat capacitor and the lead, and in order to realize the interconnection of two layers of conductive circuits, when the laser is irradiated to the PI position wrapped by epoxy resin, the power and the scanning speed of a laser are respectively adjusted to 8542W/cm 2 And 1mm/s, the ablation depth of the PI is increased, so that the PI at the cross-linking part is completely ablated and penetrated, the interconnection of the multilayer conductive circuit is realized, and the obtained multilayer interconnection plane inductor and the plate capacitor (namely the inductance-capacitance circuit 7) further have a five-layer structure. As shown in fig. 6.
The patterned flexible graphene circuit obtained by the invention has the properties of high temperature resistance, stability, strong acid and alkali resistance and the like, and has potential application in the fields of biosensing, soft robots, intelligent skins, laser repair circuits and the like.
It will be understood by those skilled in the art that the foregoing is only a preferred embodiment of the present invention, and is not intended to limit the invention, and that any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the scope of the present invention.

Claims (8)

1. A method of non-contact laser machining of a multilayer structure having embedded circuitry therein, the method comprising the steps of:
(1) providing a composite film, wherein the composite film is a laminated structure and comprises a substrate, a light-absorbing polymerization layer formed on the substrate and an encapsulation layer formed on the light-absorbing polymerization layer;
(2) scanning the composite film by using laser, irradiating the light absorption polymerization layer after the laser penetrates through the substrate, performing carbonization decomposition on the region of the light absorption polymerization layer irradiated by the laser, and forming a patterned conductive circuit by using residues obtained by carbonization decomposition, so that the region of the light absorption polymerization layer is selectively carbonized by the laser in the interlayer to form the patterned conductive circuit, and an embedded circuit is prepared in the multilayer structure;
the surface of the packaging layer, which is far away from the substrate, is also provided with another light absorption polymerization layer, and the surface, which is far away from the substrate, of the corresponding light absorption polymerization layer is provided with another substrate; a light absorption polymerization connecting column is formed in the packaging layer and connects the two light absorption polymerization layers, namely the corresponding composite film has a five-layer structure; in the step (2), one substrate of the composite film is irradiated by laser, so that the corresponding light absorption polymerization layer is locally carbonized to form a patterned conductive circuit; and then, turning over the composite film, selectively carbonizing another light absorption polymer layer by using laser to form a patterned conductive circuit, and electrically connecting the carbonized light absorption polymer connecting column with the upper conductive circuit and the lower conductive circuit so as to interconnect the conductive circuits.
2. The method of claim 1 for laser processing a multilayer structure having embedded circuitry therein, wherein: the laser power density of the laser is more than 3000W/cm 2 The scanning speed is 1 mm/s-4 mm/s.
3. The method of claim 1 for laser processing a multilayer structure having embedded circuitry therein, wherein: the laser adopted in the step (2) is an infrared laser with the wavelength of 808 nm.
4. The method of claim 1 for laser processing a multilayer structure having embedded circuitry therein, wherein: the substrate is made of quartz glass; the packaging layer is made of epoxy resin; the material of the light-absorbing polymeric layer is PI.
5. The method of claim 1 for non-contact laser processing of a multilayer structure having embedded circuitry therein, wherein: and the edge of the polymerization layer is provided with a lead.
6. The method of claim 1 for laser processing a multilayer structure having embedded circuitry therein, wherein: the laser power density adopted for scanning the area outside the light absorption polymer connecting column is 3183W/cm 2 The scanning speed was 2 mm/s.
7. The method of claim 1 for laser processing a multilayer structure having embedded circuitry therein, wherein: when the laser irradiates the light absorption polymerization connecting column, the laser power density and the scanning speed are respectively adjusted to 8542W/cm 2 And 1 mm/s.
8. A multilayer structure with embedded circuits inside, characterized in that: the multilayer structure is produced by a non-contact laser processing method of the multilayer structure with embedded circuits therein according to any one of claims 1 to 7.
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