CN113903830A - Manufacturing method and manufacturing system of solar cell - Google Patents

Manufacturing method and manufacturing system of solar cell Download PDF

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Publication number
CN113903830A
CN113903830A CN202111148814.6A CN202111148814A CN113903830A CN 113903830 A CN113903830 A CN 113903830A CN 202111148814 A CN202111148814 A CN 202111148814A CN 113903830 A CN113903830 A CN 113903830A
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China
Prior art keywords
substrate
film
station
layer
frame
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CN202111148814.6A
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Chinese (zh)
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CN113903830B (en
Inventor
雷仲礼
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Dehong Semiconductor Equipment Zhejiang Co ltd
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Dehong Semiconductor Equipment Zhejiang Co ltd
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Priority to CN202111148814.6A priority Critical patent/CN113903830B/en
Priority to CN202310715463.5A priority patent/CN116960217A/en
Priority to US17/539,912 priority patent/US11888082B2/en
Publication of CN113903830A publication Critical patent/CN113903830A/en
Priority to TW111107726A priority patent/TW202315152A/en
Priority to US18/085,344 priority patent/US11894482B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Abstract

The invention provides a solar cell manufacturing system, a solar cell manufacturing method and a solar cell module, wherein the solar cell manufacturing system comprises: a transport cavity in which a longitudinally shaped transfer rail is disposed, the longitudinally shaped transfer rail having a first side and a second side located at both sides of the transfer rail; a movable frame and having a frame opening; the membrane is adhered to the movable frame and has a plurality of membrane openings, the frame opening exposing a plurality of membrane openings, each membrane opening exposing a corresponding substrate attached to the membrane, the method reducing a footprint of the solar cell manufacturing system, saving costs.

Description

Manufacturing method and manufacturing system of solar cell
Technical Field
The present invention relates to the field of solar cells, and in particular, to a method and a system for manufacturing a solar cell.
Background
Solar cells, also known as photovoltaic cells, are power generation technologies that directly convert solar radiation into electrical energy using the photovoltaic effect, have the advantages of sufficient resources, cleanliness, safety, long service life, and the like, and are considered to be one of the most promising renewable energy technologies.
At present, a silicon heterojunction cell in a solar cell has the advantages of low-temperature preparation, simple process steps, superior temperature coefficient, good product stability and the like, and is expected to become one of mainstream technologies in the photovoltaic industry. The silicon heterojunction cell comprises: the single crystal silicon substrate comprises a single crystal silicon substrate, intrinsic layers positioned on the front surface and the back surface of the single crystal silicon substrate, an N-type doped layer on the intrinsic layer on the front surface, a P-type doped layer on the intrinsic layer on the back surface, a conductive transparent layer positioned on the N-type doped layer and a conductive transparent layer positioned on the P-type doped layer.
However, current systems for fabricating silicon heterojunction cells are large in footprint and costly because they break down the system into segments of reaction chambers and require automated equipment to dispense substrates onto substrate carriers and then collect the substrates back after reprocessing.
Disclosure of Invention
The invention provides a substrate processing system and a method thereof, which can avoid turning over the substrate so as to reduce the floor area of a solar cell manufacturing system and save the cost.
In a first aspect, the present invention provides a system for substrate processing, comprising: a frame including a frame opening; and a membrane configured to be coupled to the frame and cover at least a portion of the frame opening, the membrane comprising a membrane opening, wherein the membrane opening has a membrane opening area that is equal to or less than a frame opening area of the frame opening; wherein the membrane is configured for coupling with the substrate, wherein the substrate covers the membrane opening when the substrate is coupled with the membrane and wherein the membrane is configured to maintain the substrate in a set position relative to the frame, and wherein the membrane opening area is less than the total area of the substrate.
The substrate processing system provided by the invention has the beneficial effects that: through set up the film around the substrate, the film plays the barrier effect, can avoid in the positive plasma deposition process of substrate plasma diffusion to the substrate back to and avoid in the substrate back plasma deposition process plasma diffusion to the substrate front, moreover, because be equipped with the film on the frame, so can accomplish plasma deposition in the front and the back of the substrate on the frame, thereby can avoid overturning the substrate, with the finished product quality that improves solar module.
Optionally, the system further comprises the substrate, wherein the substrate is coupled to the film and covers the film opening.
Optionally, the substrate is coupled to the film via an adhesive or via one or more clips.
Optionally, the membrane is in tension when the membrane is coupled to the frame.
Optionally, at least a portion of the thin film is a component of a solar cell.
Optionally, the system further comprises a transport track configured to transport the frame when the film is coupled to the frame and to transport the frame when the substrate is coupled to the film. The transport rails enable the frames to be transported along a transport path or, in other words, the transport rails enable the frames to be moved from one processing station to the next.
Optionally, the frame comprises a first magnet, and wherein the transport track comprises a second magnet configured to interact with the first magnet of the frame to hold the frame in a certain position relative to the transport track, the first and second magnets acting to hold the frame in a vertical orientation.
Optionally, the system further comprises a plurality of processing stations, wherein the transport track is configured to sequentially move the frame, the film and the substrate to the processing stations.
Optionally, the processing station comprises at least two of the etch station, a Plasma Enhanced Chemical Vapor Deposition (PECVD) station, and a Physical Vapor Deposition (PVD) station. An etching station configured to provide a dry etch for the substrate; a Plasma Enhanced Chemical Vapor Deposition (PECVD) station configured to provide PECVD deposition for the substrate; a Physical Vapor Deposition (PVD) station configured to provide PVD deposition for the substrate; .
Optionally, the system further comprises a memory configured to receive a plurality of frames carrying a plurality of substrates, wherein one of the plurality of frames is a frame having the frame opening, and wherein one of the plurality of substrates is a substrate coupled to the membrane.
Optionally, the membrane is configured to form a seal around the substrate. The sealing structure can prevent plasma from diffusing.
Optionally, the film comprises an additional film opening, wherein the film is configured to couple with an additional substrate such that the additional substrate covers the additional film opening.
Optionally, the system is configured to process the substrate to manufacture one or more solar cells.
Optionally, the frame includes a plasma resistant coating that protects the frame from plasma erosion.
Optionally, the system further comprises a first isolation grid disposed on a first surface of the membrane, and a second isolation grid disposed on a second surface of the membrane, wherein the second surface of the membrane is opposite the first surface of the membrane. The first and second isolation grids function to isolate adjacent substrates.
Optionally, the system further comprises a vertical holding mechanism configured to hold the frame vertically. In some cases, the vertical retention mechanism may include a magnet that interacts with another magnet at the frame. The vertical holding mechanism is used for keeping the frame in a vertical orientation, so that the front deposition and the back deposition of the substrate can be completed, and compared with the horizontal orientation, the planar area occupied in the frame is smaller, so that the occupied area of a solar cell manufacturing system is reduced, and the cost is saved.
Optionally, the system further comprises a vertical holding mechanism, and the vertical holding mechanism on the top of the frame can also be a transmission rail or a restraining mechanism, namely, the vertical holding mechanism on the top of the frame is not provided with a magnet, but is provided with the transmission rail or the restraining mechanism, so as to avoid the magnet from influencing plasma deposition.
In a second aspect, the present invention provides a substrate processing method comprising: providing a frame comprising a frame opening, wherein a film having a film opening is coupled to the frame covering at least a portion of the frame opening, wherein a substrate is coupled to the film covering the film opening; holding the frame, the membrane and the substrate together vertically; forming a first I layer over a first surface of a substrate when the substrate is vertically oriented; forming a second I layer over a second surface of the substrate when the substrate is vertically oriented, the second surface of the substrate being opposite the first surface; forming an N layer over the first I layer when the substrate is vertically oriented; and forming a P layer over the second I layer when the substrate is vertically oriented.
The substrate processing method provided by the invention has the beneficial effects that: the vertical orientation may allow for a smaller footprint during substrate processing and the method allows for substrate processing on two opposing surfaces of the substrate in a vertical orientation from opposite sides of the transport path. Therefore, the substrate does not need to be turned over during the manufacturing process of the solar cell module, the substrate is prevented from being clamped, the product quality can be effectively improved, moreover, the film can play a role of a barrier, the plasma can be prevented from diffusing to the back side of the substrate in the plasma deposition process of the front side of the substrate, and the plasma can be prevented from diffusing to the front side of the substrate in the plasma deposition process of the back side of the substrate.
Optionally, the method further comprises: forming a first conductive layer over the first surface of the substrate; and forming a second conductive layer over the second surface of the substrate.
Optionally, the first conductive layer comprises a first ITO layer and the second conductive layer comprises a second ITO layer.
Optionally, the method further comprises: forming a first conductive line on the first surface of the substrate while the substrate is coupled to the film, the first conductive line connected to a surface of the first conductive layer; and forming a second conductive line on the second surface of the substrate while the substrate is coupled to the film, the second conductive line connected to a surface of the second conductive layer.
Optionally, the first conductive line extends beyond the first edge of the substrate.
Optionally, the second conductive line extends beyond a second edge of the substrate, the second edge being opposite the first edge of the substrate.
Optionally, the substrate, at least a portion of the film, the first I layer, the N layer, the second I layer, the P layer, the first conductive layer and the second conductive layer together form a first module; and wherein the method further comprises connecting the first module and second module to form an assembly.
Optionally, the first module and the second module are connected using an adhesive.
Optionally, the first module comprises a first substrate, a first conductive line over a first surface of the first substrate, and a second conductive line over a second surface of the first substrate, the second surface of the first substrate being opposite the first surface of the first substrate; the second module includes a second substrate, a first conductive line over a first surface of the second substrate, and a second conductive line over a second surface of the second substrate, the second surface of the second substrate being opposite the first surface of the second substrate; and wherein the first conductive lines on the first surface of the first substrate are electrically connected to the second conductive lines on the second surface of the second substrate when the first module and the second module are connected.
Optionally, the method further comprises: placing a first polymeric film and a second polymeric film on opposite surfaces of the component; and sandwiching the first polymeric film, the assembly and the second polymeric film between a first glass and a second glass.
Optionally, the first module comprises a solar cell module.
Optionally, the method further comprises texturing the first surface and the second surface of the substrate when the substrate is vertically oriented, wherein the act of texturing is performed before the first I-layer, the N-layer, the second I-layer, and the P-layer.
Optionally, the method further comprises moving the frame, the film and the substrate together to a plurality of processing stations, wherein the moving action is performed with the substrate vertically oriented.
Optionally, the method further comprises removing the film from the frame.
Optionally, the substrate is used to manufacture a solar module, and wherein the method further comprises coupling another membrane to the frame, and coupling another substrate to the membrane to manufacture another solar module.
Optionally, a peripheral portion of the membrane is coupled to the portion of the membrane defining the membrane opening and forms a seal with the portion of the membrane defining the membrane opening, the seal helping to prevent plasma diffusion and thereby contamination.
Optionally, the film comprises an additional film opening, wherein an additional substrate is coupled to the film covering the additional film opening.
Optionally, the method further comprises providing a texturing treatment on the opposite surface of the substrate. The texturing process may be achieved using dry etching.
Optionally, the method further comprises coupling the thin film with a first isolation grid prior to the act of providing the texturing process, wherein the first isolation grid is coupled to the first surface of the thin film.
Optionally, the method further comprises coupling the thin film with a second isolation grid, wherein the second isolation grid is coupled to a second surface of the thin film, the second surface of the thin film being opposite the first surface of the thin film.
Optionally, the first isolation grid is configured to isolate the substrate from an additional substrate that is also coupled to the thin film, wherein at least a portion of the first isolation grid is located between the substrate and the additional substrate.
Optionally, the method further comprises: forming a first conductive layer over the N layer and a second conductive layer over the P layer, wherein the first conductive layer extends over the substrate, across the space between the substrate and the additional substrate, and over the additional substrate.
Optionally, the method further comprises removing the first isolation grid, wherein removing the first isolation grid removes portions of the first conductive layer that extend over the space between the substrate and the additional substrate, thereby electrically isolating the substrate and the additional substrate.
Optionally, the method further comprises removing a portion of the first conductive layer spanning the gap between the substrate and the additional substrate using a laser device.
Optionally, the substrate is processed to form a first module, and the method further comprises: forming a second module using the additional substrate; and electrically coupling conductive lines on a first surface of the first module with conductive lines on a second surface of the second module.
Optionally, the act of electrically coupling includes stacking a portion of the second module on a portion of the first module such that the conductive lines on the first surface of the first module are in contact with the conductive lines on the second surface of the second module.
Optionally, the act of electrically coupling comprises: creating a hole through the thickness of the film at a location between the substrate and the additional substrate; and forming an electrical conductor in the hole.
In a third aspect, the present invention provides a solar cell module comprising: a first module having a first substrate having a first surface and a second surface opposite the first surface, the first module further having a first conductive line disposed on the first surface of the first substrate and a second conductive line disposed on the second surface of the first substrate; a second module having a first surface and a second surface opposite the first surface, the second module further having a first conductive line disposed on the first surface of the second substrate and a second conductive line disposed on the second surface of the second substrate; and a film comprising a first film opening and a second film opening, wherein the first substrate and the second substrate are coupled to a first surface of the film, wherein the first substrate covers the first film opening, and wherein the second substrate covers the second film opening; wherein the thin film comprises a through hole at a position between the first substrate and the second substrate; and wherein the first conductive lines of the first module are electrically connected to the second conductive lines of the second module via conductive lines located in the vias of the thin film.
The solar cell module provided by the invention has the beneficial effects of high finished product quality and high energy conversion efficiency.
Optionally, the first module further comprises a first I layer disposed on the first surface of the first substrate, a second I layer disposed on the second surface of the first substrate, an N layer disposed on the first I layer, and a P layer disposed on the second I layer.
Optionally, the solar module further comprises a first polymer film and a second polymer film, wherein the first module, the second module and the film are located between the first polymer film and the second polymer film.
Optionally, the solar cell module further comprises a first glass and a second glass, wherein the first polymer film and the second polymer film are between the first glass and the second glass.
In a fourth aspect, the present invention provides a solar cell module comprising: a first module comprising a first membrane provided with a first membrane opening; and a first substrate covering the first thin film opening, wherein the first substrate has a first surface and a second surface opposite the first surface, wherein the first module further has a first conductive line disposed on the first surface of the first substrate, and a second conductive line disposed on the second surface of the first substrate; and a second substrate covering the second thin film opening, wherein the second substrate has a first surface and a second surface opposite to the first surface, wherein the second module further has a first conductive line disposed on the first surface of the second substrate, and a second conductive line disposed on the second surface of the second substrate; wherein a portion of the first conductive lines of the first module extend beyond an edge of the first substrate and are located on the first film; wherein a portion of the second conductive lines of the second module extend beyond an edge of the second substrate and are located on the second film; and wherein a portion of the second film overlaps a portion of the first film such that the first conductive line of the first module is electrically coupled to the second conductive line of the second module.
Optionally, the first module further comprises a first I layer disposed on the first surface of the first substrate, an N layer disposed on the I layer, a second I layer disposed on the second surface of the first substrate, and a P layer disposed on the second I layer.
Optionally, the solar module further comprises a first polymer film and a second polymer film, wherein the first module, the second module and the film are located between the first polymer film and the second polymer film.
Optionally, the solar cell module further comprises a first glass and a second glass, wherein the first polymer film and the second polymer film are between the first glass and the second glass.
In a fifth aspect, the present invention provides a system for manufacturing one or more solar cells, comprising a transport cavity, wherein a longitudinal shaped transport rail is arranged in the transport cavity, and the longitudinal shaped transport rail has a first side and a second side which are positioned at two sides of the transport rail; wherein the frame (carrier) is movable and has a frame opening; wherein a membrane (e.g., an adhesive membrane) is adhered to a movable frame and has a plurality of membrane openings, the frame opening exposing a plurality of membrane openings, each membrane opening exposing a corresponding substrate attached to the membrane.
The manufacturing system provided by the invention has the beneficial effects that: the method can reduce the floor area of a solar cell manufacturing system, save cost, avoid pollution caused by plasma diffusion and avoid turning over a substrate so as to improve the quality of a finished product of a solar cell module.
Optionally, the manufacturing system further comprises a front film station having a first electrode located on a first side of the transport track and a second electrode located on a second side of the transport track, the first and second electrodes being configured to move towards the transport track to form an enclosed space containing the substrate.
Optionally, the front film station is configured to form a front film layer on the first surface of the substrate.
Optionally, the manufacturing system further comprises a back film station having a first electrode on the second side of the transport track and a second electrode on the first side of the transport track, the first electrode of the back film station and the second electrode of the back film station being configured to move towards the transport track to form an enclosed space containing the substrate.
Optionally, the back film station is configured to form a back film layer on the back surface of the substrate.
Optionally, the front film station is configured to form the front film layer before the back film station forms the back film layer.
Optionally, the back film station is configured to form the back film layer before the front film station forms the front film layer.
Optionally, the manufacturing system further comprises a preparation station and a texturing station, wherein both the preparation station and the texturing station are arranged before the front film station and the back film station, and the texturing station is configured to provide a texturing treatment on the front surface and the back surface of the substrate.
Optionally, the manufacturing system further comprises a magnetron sputtering station configured to process the substrate after the substrate is processed by the front film station and the back film station.
Optionally, the magnetron sputtering station comprises a first magnetron sputtering device and a second magnetron sputtering device.
Optionally, the first magnetron sputtering device is configured to face the first surface of the substrate and to form a front conductive layer on the first surface of the substrate.
Optionally, the second magnetron sputtering device is configured to face a back surface of the substrate and to form a back conductive layer on the back surface of the substrate.
Optionally, the manufacturing system further comprises an isolation gate station configured to arrange isolation grid devices on the first and rear surfaces of the thin film between adjacent substrates, respectively.
Optionally, the manufacturing system further comprises a texturing station, wherein the texturing station is located before a preparation station, and the barrier gate station is arranged between the texturing station and the preparation station.
Optionally, the manufacturing system comprises a texturing station configured to provide a texturing process on the substrate.
Optionally, the texturing station comprises a dry etching apparatus.
Optionally, the texturing station is located between the preparation station and the front/back film station.
Optionally, the material of the isolation grid device comprises a conductor material and/or a tape material.
Optionally, the manufacturing system further comprises a stamping station configured to form a through-hole through the film between adjacent substrates.
Optionally, the manufacturing system further comprises a bus bar connection station located after the stamping station, the bus bar connection station configured to form electrical conductors in the through-holes (and optionally also on the front side and the back surface of the substrates) such that electrically conductive wires (bus bars) on the front surface of one substrate are electrically connected with electrically conductive wires (bus bars) on the back surface of an adjacent substrate.
Optionally, the manufacturing system further comprises a laser device configured to remove a portion of the front conductive layer and a portion of the back conductive layer between adjacent substrates.
Optionally, the manufacturing system further comprises a loading station located after the preparation station and before the front film station and the back film station.
Optionally, the manufacturing system further comprises a buffer chamber located after the front film station and the back film station and before the magnetron sputtering station.
Optionally, the manufacturing system further comprises a pre-heat station located after the texturing station and before the front film station and the back film station.
Optionally, the manufacturing system further comprises an unloading station located after the magnetron sputtering station and before the stamping station.
Optionally, the film comprises polyimide, polyester or polypropylene.
Optionally, only a portion of the film surrounding the film window has adhesive properties.
Optionally, the film comprises two planar pieces, one or each of the planar pieces having an adhesive surface, wherein the planar pieces are attached to each other via a last portion of the adhesive surface, wherein the film openings of one of the two planar pieces are in one-to-one correspondence with the film openings of the other of the two planar pieces.
Optionally, the substrate is sandwiched between respective portions of two planar sheets of the film.
In a sixth aspect, the present invention provides a method of manufacturing one or more solar cells performed by a manufacturing system, the method comprising: providing a plurality of substrates including a first substrate adhered to a film (e.g., an adhesive film), wherein a film opening in the film exposes a portion of the first substrate; attaching the membrane to a movable frame; and transporting the frame in a transport chamber along a transport track.
Optionally, the frame is transported to a first position in which opposing surfaces of the first substrate, including a front surface and a back surface, face the first electrode and the second electrode of the front film station, respectively; wherein the method further comprises: moving the first and second electrodes toward the frame to form an enclosed space containing the first substrate; and forming a front thin film layer on the front surface of the first substrate.
Optionally, the method further comprises: transporting the frame to a second position in which the opposing surfaces of the first substrate face the first and second electrodes of the back film station, respectively; moving the first electrode and the second electrode of the back film station toward the frame to form an enclosed space containing the first substrate; and forming a back film layer on the rear surface of the first substrate.
Optionally, the method further comprises texturing the front side and the back surface of the first substrate prior to forming the front or back film layer.
Optionally, after forming the front thin film layer and the back thin film layer, the method further comprises forming a front conductive layer on the front thin film layer; and forming a back conductive layer on the back film layer.
Optionally, the first and rear surfaces of the film are provided with an isolation grid device, respectively, prior to forming the front and rear conductive layers.
Optionally, at least a portion of the front conductive layer extends over a gap between the first and second substrates, and the method further comprises removing the portion of the front conductive layer.
Optionally, at least a portion of the back conductive layer extends over a gap between the first substrate and the second substrate, and the method further comprises removing the portion of the back conductive layer.
Optionally, portions of the front conductive layer and/or portions of the back conductive layer are removed by removing the isolated grid device from the thin film.
Optionally, a laser is used to remove portions of the front conductive layer and/or portions of the back conductive layer.
Optionally, after removing the portion of the front conductive layer between the first substrate and the second substrate, and after removing the portion of the back conductive layer between adjacent substrates, the method further comprises forming a through-hole between the first substrate and the second substrate through the thin film.
Optionally, the first substrate and the second substrate are both connected to the membrane, and the method further comprises forming an electrical conductor in the via to connect a first bus bar at a first surface of the first substrate to a second bus bar at a second surface of the second substrate.
Optionally, the method further comprises cutting a first portion of the film comprising the first substrate from a second portion of the film attached to the frame.
Optionally, the method further comprises: removing a remaining portion of the film coupled to the frame; and reattaching a new film to the frame for fabrication of a next solar cell after the remaining portion of the film is removed from the frame.
In a seventh aspect, the present invention provides a solar cell module, which includes at least one substrate unit, wherein the substrate unit includes a plurality of substrates connected together by an adhesive film, the plurality of substrates includes a first substrate and a second substrate, a first surface of each substrate has a front thin film layer, a back thin film layer is disposed on a back surface of each substrate, at least a portion of the substrate is exposed from an opening of the substrate, a through hole penetrating through the adhesive film is disposed on the adhesive film between adjacent substrates, a conductive wire is disposed on a surface of the front thin film layer, another conductive wire is disposed on a surface of the back thin film layer, and a front surface of the first substrate is electrically connected to a back surface of the second substrate.
Optionally, a front conductive layer is disposed between the front thin film layer and the conductive wires associated with the front thin film layer; and the rear conductive layer is disposed between the back film layer and another conductive line associated with the back film layer.
Optionally, the substrate has a thickness of between 50 microns and 1.5 millimeters.
Optionally, the solar cell module further comprises a first plastic encapsulant layer and a second plastic encapsulant layer.
The manufacturing system includes a movable frame and a transport track for manufacturing the solar cell, wherein the frame includes a frame opening, the frame around the frame opening configured to couple with a film (e.g., an adhesive film), the film including a plurality of film openings, wherein each film opening is configured to expose a corresponding one of the substrates.
Optionally, the material of the bearing frame comprises an aluminium alloy, stainless steel, carbon composite or titanium.
Optionally, the surface of the carrier frame comprises a plasma resistant coating.
Optionally, the manufacturing system further comprises a detachable mechanism configured to detachably connect the frame with the first spacer grid device on one side of the membrane.
Optionally, the detachable mechanism is further configured to detachably connect the frame with a second isolation grid arrangement on the other, opposite side of the membrane.
Optionally, the manufacturing system further comprises a transport track.
Optionally, the transport track comprises pulleys, belts or magnetic levitation mechanisms.
Optionally, the manufacturing system further comprises a vertical holding mechanism for vertically holding the frame.
Optionally, the top of the vertical retention mechanism includes a magnet.
Optionally, the vertical holding mechanism at the top of the movable frame has a first magnet, a concave magnetic shield is disposed on an inner side wall of the top of the transportation chamber, the concave is toward the movable frame, the top of the movable frame is transferable in the groove, a second magnet is disposed on the inner side wall opposite to the groove, the second magnet is opposite to the first magnet, the opposite second magnet is opposite to the first magnet, and a gap is formed between the top of the movable frame and the bottom of the groove.
The solar cell includes a plurality of substrates connected together by a film (e.g., an adhesive film), so that the plurality of substrates can be formed and/or processed together at once without strictly controlling the shape and position of the conductive lines on each substrate, and the electrical connection between the front side of one substrate and the second surface of an adjacent substrate can be better achieved.
Other features will be described in the detailed description.
Drawings
The foregoing and other features and advantages will become apparent to those skilled in the art from the following detailed description of exemplary embodiments thereof, which proceeds with reference to the accompanying drawings, wherein:
FIG. 1A illustrates a system for substrate processing provided by the present invention;
FIG. 1B illustrates additional processing provided by the present invention after processing performed by the system of FIG. 1A;
FIG. 2 illustrates a framework provided by the present invention configured for use with the system of FIG. 1A;
FIG. 3 illustrates one of the frames of FIG. 2 provided by the present invention, particularly illustrating the frame movably coupled to the transport track;
FIG. 4 shows a cross-section of one of the transport tracks of FIG. 3 provided by the present invention;
FIG. 5 illustrates a membrane provided by the present invention for coupling with the frame of FIG. 2;
FIGS. 6A-6C illustrate different variations of the membranes provided by the present invention for coupling with the frame of FIG. 2;
FIG. 6D illustrates a method of attaching a substrate to a film provided by the present invention;
FIG. 6E illustrates a frame having multiple subframes for carrying respective membranes and respective sets of substrates provided by the present invention;
FIG. 6F illustrates an isolation grid configured to isolate substrates from one another provided by the present invention;
FIG. 6G illustrates isolation of a group of substrates provided by the present invention;
FIG. 6H illustrates another method of attaching a substrate to a film provided by the present invention;
FIG. 7 illustrates a process chamber in one mode of processing provided by the present invention;
FIG. 8 illustrates the relative positioning of the components of the processing chamber of FIG. 7 and the frame of FIG. 2 provided by the present invention;
FIG. 9 illustrates the process chamber of FIG. 7 in a transfer mode provided by the present invention;
FIG. 10A illustrates another process chamber provided by the present invention;
FIG. 10B shows two film stations provided by the present invention, each having the configuration shown in FIG. 10A and being in processing mode;
FIG. 10C shows the two film stations of FIG. 10B in a transport mode provided by the present invention;
FIG. 11 illustrates a sputtering module with an open shutter provided by the present invention;
FIG. 12 illustrates a sputtering module with a closed shutter provided by the present invention;
FIG. 13 illustrates a technique provided by the present invention to remove a processed substrate from the frame of FIG. 2;
fig. 14 shows a cross-sectional view of a solar cell module provided by the present invention;
FIG. 15A illustrates a module provided by the present invention having a thin film of a plurality of substrates coupled thereto;
FIG. 15B shows two modules provided by the present invention coupled together to form an assembly;
FIG. 15C shows twelve modules provided by the present invention coupled together to form an assembly;
FIG. 16 illustrates the mounting of polymer films and glass to a plurality of modules provided by the present invention;
FIG. 17 illustrates a technique of two modules coupled to each other by thin film electrical connections provided by the present invention;
FIG. 18 illustrates a method of processing a substrate provided by the present invention;
figure 19 illustrates another system for substrate processing provided by the present invention.
Detailed Description
The technical solution in the embodiment of the present invention is described below with reference to the drawings in the embodiment of the present invention. In the description of the embodiments of the present invention, the terminology used in the following embodiments is for the purpose of describing particular embodiments only and is not intended to be limiting of the present application. As used in the specification of the present application and the appended claims, the singular forms "a", "an", "the" and "the" are intended to include the plural forms as well, such as "one or more", unless the context clearly indicates otherwise. It should also be understood that in the following embodiments of the present application, "at least one", "one or more" means one or more than two (including two). The term "and/or" is used to describe an association relationship that associates objects, meaning that three relationships may exist; for example, a and/or B, may represent: a alone, both A and B, and B alone, where A, B may be singular or plural. The character "/" generally indicates that the former and latter associated objects are in an "or" relationship.
Various exemplary embodiments and details are described below in relation to the figures. It should be noted that the figures may or may not be drawn to scale and that elements of similar structures or functions are represented by like reference numerals throughout the figures. It should also be noted that the drawings are only intended to facilitate the description of the embodiments. They are not intended as an exhaustive description of the invention or as a limitation on the scope of the invention. In addition, the illustrated embodiments need not have all aspects or advantages shown. An aspect or advantage described in connection with a particular embodiment is not necessarily limited to that embodiment, and may be practiced in any other embodiment, even if not so shown, or if not explicitly described.
According to the technical scheme of the invention, the manufacturing system and the transportation cavity of the solar cell are provided with a longitudinal-shaped transportation rail, and the transportation cavity is provided with a first side and a second side which are positioned on two sides of the transportation rail. A membrane (e.g., an adhesive membrane) is adhered to the movable frame and has a plurality of membrane windows (also known as membrane openings). The frame has a frame opening exposing the film and at least a portion of the film opening. Each film opening is configured to expose a respective substrate. The manufacturing system has a front film station for forming a front film layer on a first surface of the substrate and a back film station for forming a back film layer on a second surface of the substrate. The invention has small occupied area and is beneficial to saving cost.
In order that the above objects, features and advantages of the present invention will become more apparent, specific embodiments thereof will be described in detail below with reference to the accompanying drawings.
Manufacturing system and method
Fig. 1A illustrates a manufacturing system 10 for manufacturing one or more solar cells. As shown in fig. 1A, a solar cell manufacturing system 10 is provided for forming one or more heterojunction solar cells and includes a preparation station 107, a loading station 108, a texturing station 104, two front film stations 102 (each having a front Plasma Enhanced Chemical Vapor Deposition (PECVD) chamber), two back film stations 103 (each having a back PECVD chamber), and a magnetron sputtering station 106 (having a first magnetron sputtering apparatus 106a and a second magnetron sputtering apparatus 106 b). The manufacturing system 10 also includes a slit valve 130, the slit valve 130 being configured to interface between atmospheric pressure and vacuum involved in different processes performed by the manufacturing system 10.
The preparation station 107, loading station 108, texturing station 104, front film station 102, back film station 103 and magnetron sputtering apparatus 106 are configured to cooperate spatially and temporally with one another. This avoids the need to have separate film guides to achieve spatial and temporal matching between processing stations, and the solar cell manufacturing system is relatively simple and small in footprint. Furthermore, the substrate is less susceptible to particle generation because the substrate does not require the use of a manipulator to enter and exit any thin film leader.
The texturing station 104 is configured to texture the front and back surfaces of the substrate (also referred to as a base plate) to form a texture on the front surface (e.g., a first surface) and the back surface (e.g., a second surface) of the substrate. The front thin-film station 102 is configured to form a front thin-film layer on the front surface of the substrate, wherein the front thin-film layer includes a front intrinsic layer and a front doped layer located on the front intrinsic layer. The back-film station 103 is configured for forming a back-film layer on the back surface of the substrate (also referred to as a substrate), wherein the back-film layer includes a back intrinsic layer and a back-doped layer on the back intrinsic layer. Magnetron sputtering station 106 is configured to form a front conductive layer and a back conductive layer on the front side and back side, respectively, of a substrate (also referred to as a substrate). In some embodiments, each conductive layer may be an Indium Tin Oxide (ITO) layer. In other embodiments, each conductive layer may be made of other materials.
As shown in fig. 1A, the solar cell manufacturing system 10 further includes a buffer chamber 110 and a magnetron sputtering station 106 after the front thin film station 102 and the back thin film station 103, and the pressure in the magnetron sputtering station 106 may be different from the pressure in the chamber of the front thin film station 102 or the pressure in the chamber of the back thin film station 103 after the buffer chamber 110. The buffer chamber 110 is configured such that the pressure in the buffer chamber 110 can reach the pressure in the magnetron sputtering station 106.
The material of the front intrinsic layer and the back intrinsic layer includes amorphous silicon (A-SI: H). In some cases, each of the front and back intrinsic layers may include one or more (e.g., 2, 3, etc.) layers of amorphous silicon: the material of the front doped layer may be amorphous silicon or stacked layers of microcrystalline silicon, or both doped with N-type ions. The material of the rear doped layer is amorphous silicon doped with P-type ions. In some cases, the front doped intrinsic layer may be a phosphorus doped intrinsic layer and the back doped intrinsic layer may be a boron doped intrinsic layer. In this case, the N layer may be formed using phosphorus, and the P layer may be formed using boron. The material of the front conductive layer and the rear conductive layer is a transparent conductive oxide. In other embodiments, other materials may be used for the different layers.
In some cases, the N layer and the P layer may be made of microcrystalline silicon. Additionally, in some embodiments, any or all of the I, N, and P layers may be comprised of multiple deposited layers of similar materials deposited under different processing conditions to improve the conversion efficiency of the solar cell.
The solar cell manufacturing system 10 further includes a transmission path 100. In some cases, the transfer path 100 may include rails, guides, transfer surfaces, etc. that extend along one or more transfer cavities that provide a vacuum environment. The elongated track L is arranged in the transfer chamber 1014. The elongated track L is configured to allow the frame 101 to move therealong, thereby placing the frame 101 at different processing stations for processing substrates carried by the frame 101.
As shown in fig. 1B, during use, a frame 101 having a frame opening is provided (item 170). Then, the film 120 with the film opening is coupled to the frame 101 (item 171). When the membrane 120 is coupled to the frame 101, the membrane 120 covers at least a portion of the frame opening, thereby allowing the frame opening to expose the membrane 120 and the membrane opening. Next, a plurality of substrates 20 (also referred to as substrates) are coupled to the film 120 such that the substrates respectively cover the film openings (item 172). In other embodiments, the substrate may be coupled to the membrane 120 first, and then the membrane 120 may be coupled to the frame 101. When the film 120 is coupled to the frame 101, the film 120 is under tension (e.g., in at least two orthogonal directions).
Next, the frame 101 with the film 120 and the substrate 20 is inserted into the preparation station 107 (item 174). The manufacturing system 10 then sequentially conveys the frame 101 (along with the film 120 and the substrate 20) to different stations to arrange the solar cell components onto the substrate (item 176). The processing of substrate 20 by manufacturing system 10 in item 176 will be described in detail with reference to fig. 1A. The processed substrates (modules) are then provided to the storage station 112 (item 178), as shown in FIG. 1B.
The processed substrate is then retrieved from the storage station 112 (item 180). In some embodiments, interconnect holes are then punched through the film 120 at locations between the processed substrates. Furthermore, in some embodiments, if an isolation grid device is provided to isolate processed substrates (a.k.a. substrates) or groups of substrates from each other during processing by manufacturing system 10, the isolation grid device may also be removed during item 180. The isolation grid devices may be configured to be disposed on the membrane 120 at locations between the processed substrates. Thus, when a layer is formed on a substrate by manufacturing system 10, a portion of the layer may be formed on a surface of the substrate, extend over an isolation gate device disposed between the substrate and an adjacent substrate, and extend over a surface of an adjacent substrate. When the isolation grid devices are later removed, a portion of the layers located above the isolation grid devices will also be removed accordingly, breaking up the formed layers into individual layer portions of the respective substrates. The removal of the isolation grid devices will also expose the film 120 at locations between the processed substrates, allowing the film 120 at these locations to be perforated to enable the interconnect holes.
Next, electrical conductors (e.g., conductive wires of a bus bar) are then disposed on the processed substrate (item 181). In the illustrated embodiment, the bus bars and cell connections are formed on the processed substrate. In some embodiments, the bus bar may be formed using printing techniques. Further, in some embodiments, a set of front bus bars may be formed on the front surface of each processed substrate (also referred to as a substrate), and a set of back bus bars may be formed on the back surface of each processed substrate (also referred to as a substrate). Bus bars are formed to connect the ITO surface at the processed substrate, and in the final product, these bus bars are configured to collect electrons from the ITO surface. In some embodiments, the bus bars may be made of silver or silver coated copper wires or bars. In another embodiment, the bus bar may be made of copper plating. In further embodiments, the bus bars may be made of other materials. In item 181, electrical conductors can also be formed in the interconnect holes described with reference to item 180 to connect the front bus bars of a substrate to the back bus bars of an adjacent substrate (as shown in fig. 17, which will be described in further detail below).
The processed substrate (module) is then removed from the frame 101 (item 182). In some embodiments, removing the module from the frame 101 can be accomplished by cutting the film 120 such that a first portion of the film 120 to which the module is attached can be removed from the frame 101 while leaving a second portion of the film 120 coupled to the frame 101 (item 190). A second portion of the film 120 can be removed from the frame 101 to allow the frame 101 to be reused (for another film and other substrates) (item 170).
Next, the module connected to the cut-off film 120 is placed in an oven and heat-treated (item 183). The heat treatment is to harden the silver paste that can be used to form the bus bar (in item 181). In some cases, a solvent may be added to make the silver flexible to allow bus bar formation (e.g., via screen printing), and the applied heat is used to evaporate the solvent. In some cases, there may be multiple frames 101, with multiple frames 101 having multiple respective films 120 for processing by the manufacturing system 10. In this case, a plurality of cut films 120 (with corresponding module groups) may be heat treated together.
The thermally processed module sets (coupled to respective cut films 120) are then connected to one another to form an assembly (item 184). For example, a first set of modules on a first cut-off film 120 may be connected to a second set of modules on a second cut-off film 120. In some embodiments, an outer portion of the second cut-off film 120 may overlap an outer portion of the first cut-off film 120 to form electrical connections between the first set of modules and the second set of modules (as shown in fig. 15B and 15C, which will be described in further detail). The overlap technique allows a top bus bar at the top surface of one module to be electrically connected to a bottom bus bar at the bottom surface of an adjacent module via an overlap region.
Next, a polymer layer (e.g., an ethylene vinyl acetate copolymer (EVA) layer) is then disposed on the opposite side of the assembly, and glass is disposed on the opposite side comprising the polymer layer and the assembly, thereby forming a completed solar panel assembly (item 186). The completed solar panel assembly is then connected to a junction box (item 187). The junction box is configured to collect and output a Direct Current (DC) voltage of the entire solar panel assembly. The solar cells in the solar panel assembly are connected in series along a first direction of the solar panel assembly. The horizontal busbars collect the outputs of the respective columns and form a counterweight connection. The DC voltage supplied by both sides of the solar cells in the solar panel assembly is collected at the junction box by parallel connection and series connection.
In some embodiments, features described with reference to item 170, item 171, item 172, item 180, item 181, item 182, item 183, item 184, item 186, item 187, or any combination of the preceding may be automatically performed by a processing station, which may be considered a part of the manufacturing system 10. For example, the manufacturing system 10 may optionally include: a frame processing station for providing a frame 101 (described with reference to item 170); a film mounting station configured to couple film 120 to frame 101 (described with reference to item 171); a substrate mounting station configured to couple a substrate to the film 120 (described with reference to item 172), an isolated grid removal station configured to remove one or more isolated grid devices (described with reference to item 180) from the frame 101 and/or from the film 120, a punch (or punch) station configured to form through holes (described with reference to item 180) in the film 120, a bus bar printing station configured to form bus bars on opposite sides of a substrate, and a bus bar connecting station configured to form electrical conductors to connect bus bars from one side of a substrate to bus bars from an opposite side of an adjacent substrate (described with reference to item 181), a trimming station configured to remove a portion of the film 120 containing a processed substrate (described with reference to item 182), a heating station (described with reference to item 183) for thermally processing the processed substrate 20, an assembly station configured to join the plurality of processed substrates (baseplates) 20 to form an assembly (described with reference to item 184), an encapsulation station configured to provide a polymer layer and glass (described with reference to item 186) on opposite sides of the assembly, a film removal station configured to remove the remaining portion of film 120 (described with reference to items 170, 190) from frame 101, or any combination of the foregoing.
In some embodiments, any of the processing stations described herein may include mechanical components, electrical components, electromechanical components, or any combination thereof configured to provide the features described herein. Further, in some embodiments, any of the processing stations described herein may optionally include a control component, a feedback component (e.g., one or more sensors), or any other mechanical and/or electrical component.
The processing of the substrate of item 176 by manufacturing system 10 will now be described with reference to fig. 1A. First, the frame 101 carrying the substrate 20 is transferred from the preparation chamber 107 to a loading chamber (LL)108, the loading chamber 108 being configured to transfer the substrate 20 from an atmospheric environment to a vacuum environment. The frame 101 carrying the substrate 20 is transferred from the loading station 108 to the texturing station 104. The texturing stations 104 include a front texturing station 104a and a rear texturing station 104 b. In some embodiments, each of the texturing stations 104 a/104 b may be an inductively coupled plasma etching apparatus. In other embodiments, each of the texturing stations 104 a/104 b may be a capacitively coupled plasma etching apparatus. Further, in some embodiments, each of the texturing stations 104 a/104 b may include a cavity in which texturing may be performed on the substrate 20. The texturing process performed by the texturing station 104 is to roughen the opposing surface of each substrate 20 to reduce reflection from the surface of the substrate 20 so that more photons can be absorbed by the substrate 20.
In the illustrated example, the surface of the substrate 20 is textured by dry etching in the texturing station 104 such that the degree of texturing is relatively easy to control and the texture is not too deep. Thus, the substrate 20 need not be thick (as compared to wet etching techniques). In other words, since the dry etching technique is used, the substrate 20 having a thinner thickness can be used to form the solar cell. The cost of the substrate is reduced due to the relatively thin thickness of the substrate. In this embodiment, the thickness of the substrate (also referred to as a base plate) can be anywhere from 50 microns to 180 microns. In some embodiments, the dry etch may be achieved using Reactive Ion Etching (RIE).
It is advantageous to use a dry etch in the same vacuum environment prior to PECVD deposition. This is because there is no oxidation of the silicon surface and therefore covering the exposed silicon surface may not be as urgent as in current processing sequences. In the current processing sequence, the silicon surface after wet etching has the requirement of a waiting time to complete PECVD deposition on the bare silicon surface to prevent oxidation.
In the example shown, after the substrate 20 carried by the frame 101 is processed by the texturing station 104, the frame 101 carrying the substrate 20 is conveyed into the preheating station 109 before entering the first pre-film station 102, the preheating station 109 being configured to preheat the substrate 20 to a certain temperature before being processed by the first pre-film station 102, since the temperature in the first pre-film station 102 is different from the temperature in the texturing station 104. By way of non-limiting example, the preheat station 109 may be configured to preheat the substrate 20 to a temperature greater than 100 degrees celsius, greater than 150 degrees celsius, or the like. The temperature may reach above the preheat temperature during processing by the film station 102.
A first front film station 102 (e.g., the leftmost film station 102 in fig. 1A)) is configured to overlay an I-layer over (or disposed to) the front surface of the substrate 20, and a first back film station 103 (e.g., the leftmost film station 103 in fig. 1A)) is configured to dispose an I-layer over (or disposed to) the back surface of the substrate 20. Further, the second front film station 102 is configured to provide N layers on the front surface of the substrate 20, and the second back film station 103 is configured to provide P layers on the second surface of the substrate 20. In some cases, each of the front film station 102 and the back film station 103 may be configured to perform PECVD to create I, N, and P layers, respectively, onto the substrate 20. In one implementation, a PECVD deposition may be performed to form the I layer, the N layer, and the P layer. By orienting the substrate 20 vertically, the individual stations may sequentially deposit respective materials onto opposite surfaces of the substrate 20 from opposite sides of the transport path 100, which is advantageous because it prevents doping chemicals from contaminating one side of the substrate to the other side of the substrate.
In other embodiments, two front film stations 102 may be configured to process the front surface (also referred to as a first surface) of the substrate, and then two back film stations 102 then process the back surface (also referred to as a second surface) of the substrate. For example, the first front thin film station 102 may form an I layer on the front surface of the substrate 20, and then the second front thin film station 102 may form an N layer on the front surface of the substrate 20. Next, the first back film station 103 may form an I layer on the rear surface of the substrate 20, and then the second back film station 103 may form a P layer on the rear surface of the substrate 20.
In some embodiments, the front thin film station 102 may have two substations for forming the first I and N layers, respectively. In this case, manchester system 10 may not include second front film station 102. Further, the back film station 103 may have two sub-stations for forming the second I layer and the P layer, respectively. In this case, the manufacturing system 10 may not include the second back film station 103. Furthermore, in some embodiments, the substations may be arranged to form first an I-layer, then a second I-layer, and then the N-and P-layers. In other embodiments, the substations may be arranged to form layers in other orders. For example, in other embodiments, the substations may be arranged to form first an I layer, then an N layer, then a second I layer, then a P layer. In other embodiments, manufacturing system 10 may include additional thin film stations or substations to form additional layers on the front surface of substrate 20 and/or additional layers on the back surface of substrate 20.
In the embodiment shown, the frame 101 carrying the substrate 20 enters first the first front film station 102 and then the first back film station 103, and in other embodiments the frame 101 enters first the first back film station 103 and then the first front film station 102.
As shown in fig. 1A, after being processed by the front film station 102 and the back film station 103, the substrate 20 carried by the frame 101 is transferred to the buffer chamber 110 before being processed by the magnetron sputtering station 106, and the pressure in the magnetron sputtering station 106 may be different from the pressure in the chamber of the front film station 102 or the pressure in the chamber of the back film station 103. The buffer chamber 110 is configured for: causing the pressure in the buffer chamber 110 to reach the pressure in the magnetron sputtering station 106 and/or heating the substrate 204. For example, in some embodiments, the buffer chamber 110 may provide a buffer for different pressures between PECVD processes and PVD processes. Alternatively or additionally, the buffer chamber 110 may include a substrate heating mechanism configured to heat the substrate to maintain the substrate 20 at a particular temperature in the buffer chamber 110. In some cases, the heating mechanism may be configured to maintain the temperature in the buffer chamber 110 at 100c, which is lower than the temperature associated with PECVD processes (e.g., anywhere from 200 ℃ to 250 ℃).
The magnetron sputtering station 106 includes a first magnetron sputtering device 106a and a second magnetron sputtering device 106 b. The first magnetron sputtering apparatus 106a is configured to deposit material onto a first surface of the respective processed substrate 20 to create a first conductive layer (e.g., a front conductive layer or a back conductive layer). Similarly, the second magnetron sputtering apparatus 106b is configured to deposit material onto a second surface (opposite the respective first surface) of the respective processed substrate 20 to create a second conductive layer (e.g., a front conductive layer or a back conductive layer). In some cases, each of the first and second magnetron sputtering apparatuses 106a and 106b can be configured to perform Physical Vapor Deposition (PVD) to produce the conductive layer. In some embodiments, each conductive layer may be an ITO layer/film. The ITO layer includes indium, tin, and oxygen, and may be optically transparent.
With continued reference to FIG. 1A, after being processed by the magnetron sputtering station 106, the frame 101 carrying the substrate 20 is then transported to an unload chamber 111 for converting the substrate from a vacuum environment to an atmospheric environment. The frame 101 is then transported from the unload chamber 111 to the storage station 112, and the storage station 112 stores the frame 101 together with the processed substrate 20.
When the frame 101 carrying the substrate 20 is transported along the transport path 100, the frame 101 is oriented vertically (e.g. the normal of the plane of the frame 101/substrate is approximately parallel to the floor, wherein approximately parallel refers to an angle of 0 degrees plus/minus 10 degrees). Thus, when the substrate 20 is oriented vertically, the substrate 20 is processed by the texturing station 104, the front film station 102, the back film station 103 and the sputtering station 106. This feature is advantageous because it allows the transmission path 100 to occupy a smaller area (in a horizontal system, substrates are processed horizontally, as compared to a horizontal system). Furthermore, orienting the substrate vertically may enable the texturing station 10 to perform texturing on opposite surfaces of the substrate without resorting to turning tools (which occupy a large area, resulting in relatively high costs) to effect treatment of the different surfaces. It should be noted that in this embodiment, instead of using the transfer path 100, the frame 101 may be transferred using a slit valve located in a chamber of the processing station. Wherein slit valves may separate different chambers of different processing stations.
In manufacturing system 10, processing of substrate 20 does not require flipping the substrate. This is because the substrate 20 is vertically oriented when being processed by the manufacturing system 10. In particular, manufacturing system 10 has various processing stations disposed on opposite sides of transport path 100, which allow two opposing surfaces of vertically oriented substrate 20 to be processed from opposite sides of transport path 100. Thus, the substrate 20 need not be flipped during the manufacturing process.
Substrate carrying frame
Fig. 2 shows the frame 101 in more detail. As shown in fig. 2, the frame 101 includes a peripheral portion 1010 defining a frame opening 1011 and a transfer rail 1012 for enabling the frame 1010 to move along a predetermined rail. By way of non-limiting example, the transfer track 1012 may be one or more wheels, one or more rollers, one or more bearings, one or more gliders, one or more mechanical interfaces configured to couple with a track or belt, and the like.
In some embodiments, the transfer rail 1012 may be disposed at the bottom of the frame 101. In other embodiments, the transfer rail 1012 may be arranged at one side of the frame 101 or at the top of the frame 101. In other embodiments, the transport track 1012 may also be provided at other locations.
By way of non-limiting example, the material of the frame 101 may include an aluminum alloy, stainless steel, carbon composite, titanium, polymer, or any other metal or alloy. The surface of the frame 1010 may be coated with a plasma resistant coating, and the plasma resistant coating protects the bearing frame 1010 from plasma erosion.
Referring to fig. 3, the transport track 1012 enables the frame 101 to be transported along the transport path 100 such that the frame 101 (with the film 120 and the substrate 20) can be placed in different stations of the manufacturing system 10, as shown in fig. 2, the frame 101 with carrier function being transported along the transport path 100 in a vertical direction. Since substrate 20 and pellicle film 120 are coupled to frame 101 (where the major surfaces of substrate 20 and pellicle film 120 are parallel to the plane of frame 101), substrate 20 also has a vertical orientation during processing by manufacturing system 10 due to the vertical orientation of frame 101. This configuration is advantageous because the footprint of the frame 101 is small. In particular, the footprint occupied by the vertically oriented frame 101 is approximately L times t, where L is the length of the frame 101 and t is the thickness of the frame 101. If the frame 101 is oriented horizontally, the planar area occupied in the frame 101 (in this case, the occupied area would be L multiplied by L). Thus, the transport tracks in the manufacturing system 10 occupy less area (compared to a horizontal system that processes substrates horizontally) and reduce manufacturing costs.
In some embodiments, the transport path 100 may include a pulley configured to be removably and mechanically coupled to the transport track 1012. In other embodiments, the transport path 100 may include a conveyor belt or magnetic suspension mechanism configured to interface with the transport track 1012. In further embodiments, the transport path 100 may simply provide a surface for allowing the transport track 1012 to move thereon. Further, in some embodiments, the transport path 100 may include tracks, and the transport track 1012 and tracks may be implemented using a tongue and groove mechanism or any mechanical coupler that allows the frame 101 to be movably and detachably coupled to the tracks.
As shown in fig. 2-4, the frame 101 further includes a vertical retention mechanism 1013 for maintaining the frame 101 vertical while a substrate coupled to the frame 101 is being processed by the manufacturing system 10. The vertical retention mechanism 1013 is configured to interface with the channel 402 of the rail 404 coupled to the support structure 118 (fig. 4). In particular, the channel 402 is configured to receive a vertical mechanism 1013 such that the frame 101 can slide relative to the rails 404 and remain in a vertical orientation.
In the illustrated embodiment, the vertical retention mechanism 1013 includes a magnet (referred to herein as a "first magnet"). As shown in fig. 4 (fig. 4 is a side view of fig. 3), the first magnet of the vertical holding mechanism 1013 has an N pole and an S pole. The rail 404 is provided with a magnetic shield 150 of concave or c-shaped cross-sectional shape. The rail 404 also has a second magnet 151 and a third magnet 152, the second magnet 151 having an N pole facing the vertical holding mechanism 1013, the third magnet 152 having an S pole facing the vertical holding mechanism 1013, the frame 101 (and the substrate) being held upright by repulsion between the first magnet and the second magnet 151 of the vertical holding mechanism 1013 during processing of the substrate 20 carried by the frame 101, the top of the vertical holding mechanism 1013 being spaced from the inner surface of the rail 404 such that the top of the vertical holding mechanism 1013 is not in contact with the inner surface of the rail 404. The opposite side of the vertical retention mechanism 1013 is also spaced from the inside surface of the rail 404 due to the opposite pole of the docking magnet. Thus, the movement of the frame 101 with respect to the rails 404 does not generate any particles and contamination problems are avoided.
In other embodiments, the vertical retention mechanism 1013 at the top of the frame 101 can also be a transfer rail or a confinement mechanism, i.e., the vertical retention mechanism 1013 at the top of the frame 101 is not provided with magnets, but is similar to the transfer rail or confinement mechanism of the transfer rail 1012 to avoid the magnets from affecting the plasma deposition.
In the illustrated embodiment, the vertical retention mechanism 1013 is disposed at the top of the frame 101. In other embodiments, the vertical retention mechanism 1013 may also be disposed at other locations, such as at the bottom of the frame 101, at the sides of the frame 101, and so forth.
In other embodiments, the frame 101 does not include the transport track 1012. For example, in some embodiments, the conveyance path 100 may include a transport track 1012, such as one or more wheels, one or more rollers, or the like, that mechanically supports the frame 101 and allows the frame 101 to move along the conveyance path 100. In further embodiments, the bottom of the frame 101 may not be in contact with any rails, and rails may not be needed. In such cases, the top rail 118 may include mechanical components configured to be removably coupled to the frame 101 while keeping the frame 101 upright and supporting the weight of the frame 101.
Fig. 5 shows an example of a membrane (e.g., adhesive membrane) 120 configured to be coupled to the frame 101 of fig. 3, the membrane 120 having a plurality of membrane openings 1201 corresponding to respective substrates to be coupled to the membrane 120. The frame opening 1011 of the frame 101 exposes the film 120 and also exposes the film opening 1201. The frame openings 1011 and the film openings 1201 also cooperate with each other to expose substrates coupled to the respective film openings 1201 during the manufacturing process.
The material of the membrane 120 may be made of a material that is resistant to high temperatures and/or large temperature changes without significant deformation, and that is chemically resistant to plasma reactions. In this manner, the film 120 may be able to withstand high temperatures while being processed by the manufacturing system 10. In some cases, the temperature in one or more stations of the manufacturing system 10 is not greater than 250 degrees celsius, and the film 120 is not easily deformed at such temperatures. Furthermore, in some cases, the adhesion effect of substrate 20 on film 120 is not adversely affected by the high temperatures reached during the manufacturing process performed by manufacturing system 10. In some embodiments, a silicone-based adhesive or any other adhesive capable of withstanding high temperatures (e.g., greater than 150 degrees celsius, such as 200 degrees celsius and 250 degrees celsius, an adhesive greater than 250 degrees celsius, etc.) may be used to attach the substrate 20 to the film 120. In some embodiments, the material of the film 120 may be polyimide, polyester polypropylene, or the like. In some embodiments, the thin film 120 may be made of a material capable of withstanding the heat involved during the plasma process to form a layer on the substrate. In some embodiments, the thin film 120 will become a component of the solar cell module after the fabrication process is completed. In this case, the membrane 120 may be made of a transparent or translucent material that is part of the solar module and that, after assembly, is part of the future light path.
In the example shown, each thin-film opening 1201 has a majority area configured to expose a respective substrate 20 to be attached to the thin film 120, which is advantageous because it allows the thin-film opening 1201 to expose a majority of the surface area of the two opposing surfaces of the substrate 20. Thus, the manufacturing system 10 may form layers of a solar cell assembly on opposite sides of the substrate 20 when the substrate 20 is being carried by the frame 101 and the film 120.
In the example of fig. 5, the membrane 120 has 36 membrane openings 1201. In one possible way, the film openings can be formed by cutting the film, as shown in FIG. 5; alternatively, the film openings can also be formed by adhering a strip-shaped film transversely and a strip-shaped film vertically to the frame. In other examples, the membrane 120 may have other numbers of membrane openings 1201. For example, in other examples, the membrane 120 may have less than 36 membrane openings 1201, such as two rows of six membrane openings (i.e., 12 membrane openings), one membrane opening, and so on. In other examples, the membrane 120 may have more than 36 membrane openings 1201.
It should be noted that the frame 101 is not limited to carrying one membrane 120. The frame 101 may be configured to couple to one membrane 120 (fig. 6A) or a plurality of membranes 120 (fig. 6B-6C). Fig. 6B shows a frame 101 carrying three membranes 120, each membrane 120 having 12 substrates 20 coupled thereto. Fig. 6C shows a frame 101 carrying 6 membranes 120, each membrane 120 having 6 substrates 20 coupled thereto. The frame 101 may carry other numbers of membranes 120. In addition, each film 120 may carry other numbers of substrates 20.
Fig. 6D illustrates a method of coupling substrate 20 to film 120. As shown in the top view, the membrane 120 has a membrane opening 1201. Each film opening 120 has a dimension (area)) having a total area that is less than the total area of the corresponding substrate 20 in the illustrated example, the cross-sectional dimension of the film opening 120 being less than the cross-sectional dimension of the substrate 20, which allows the substrate 20 to overlap the film 120 by 1mm at each of the two opposing sides of the substrate 20. Next, referring to the middle view of fig. 6D, an adhesive is applied to the portion of the film 120 surrounding the film opening 1201. In some cases, the application of adhesive may be performed by an adhesive device (e.g., an automated dispensing dispenser), and the adhesive device may be part of the manufacturing system 10. Next, referring to the bottom view of fig. 6D, the substrate 20 is coupled to the film 120 by an adhesive to form a substrate strip. When the substrate 20 is coupled to the thin film 120, the substrate 20 covers the corresponding thin film opening 1201, and the thin film opening 1201 exposes a large area of the corresponding substrate 20.
In other embodiments, the width of the overlap (measured in a direction perpendicular to the perimeter of the film opening) between the substrate 20 and the portion of the film 120 adjacent the film opening may be other than 1 mm. For example, the width of the overlap may be from between 0.3mm to 3mm, or 0.4mm to 2mm, or 0.5mm to 1.5 mm.
As discussed above, the membrane 120 may be configured to be coupled to the frame 101. In some cases, the membrane 120 may be directly coupled to the frame 101. In some embodiments, the coupling may be achieved using an adhesive (e.g., a silicone-based adhesive). The adhesive may be applied by manufacturing system 10, or film 120 may be contacted with the adhesive on its surface (e.g., at one or more locations along the outer peripheral portion of film 120). In other cases, the membrane 120 may be indirectly coupled to the frame 101. For example, as shown in fig. 6E, in some cases, each membrane 120 may be coupled to a subframe 610, and subframe 610 is coupled to frame 101.
In some cases, an isolation grid may be coupled to membrane 120 to isolate a substrate or group of substrates after substrate 20 is mounted to membrane 120 and after membrane 120 is coupled to frame 101. Referring to fig. 6F, which shows an example of an isolation grid device 160, isolation grid device 160 has a frame 1601 and a grid opening 1602 defined by an isolation grid 1603 disposed on frame 1602. Isolation grid arrangement 160 is configured for placement over pellicle film 120 in a stacked configuration (with the major plane of isolation grid arrangement 160 parallel to the major plane of the pellicle film) such that isolation grid 1603 is disposed between adjacent substrates 20, isolation frame device 160 may optionally further comprise a detachable mechanism for detachably connecting frame 1601 to frame 101 and/or to pellicle film 120. The frame 1601 and the isolation gate 1603 may be made of metal or alloy, such as aluminum alloy. The surfaces of frame 1601 and isolation barrier 1603 may be coated with a plasma resistant coating for protecting the surfaces of frame 1601 and isolation barrier 1603 (e.g., to prevent the surfaces of frame 1601 and isolation barrier 1603 from being eroded by plasma).
Although one isolation grid device 160 is shown, during use, there may be two isolation grid devices 160 disposed on opposite sides of the membrane 120. The isolation grid device 160 may be coupled to the frame 101 and/or the membrane 120.
During the deposition process performed by manufacturing system 10, a conductive material is deposited over the opposing surface of substrate 20 to form a conductive layer (a front conductive layer, and a back conductive layer over the back/second side of substrate 20) on the front/first side of substrate 20. For example, the front conductive layer may comprise a conductive material extending across the front surface of the first substrate, across the region between the first substrate and the adjacent (second substrate) and across the front surface of the second substrate. The isolation grid arrangement 160 prevents deposition of conductive material onto the opposing surfaces of the thin film 120 at locations between the substrates 20, as these locations are covered by the isolation gates 1603 of the isolation gate devices 160. After forming the conductive layers on the opposite surfaces of substrate 20, isolation grid devices 160 on the opposite sides of film 120 may then be removed.
When the isolation gates 1603 are subsequently removed, the deposited conductive material on the isolation gates 1603 on the opposite sides of the thin film 120 between adjacent processed substrates is also removed along with the isolation gates 16023. As a result, the conductive layers on both sides of the treated substrate are broken down into separate smaller conductive layers of the respective treated substrates. Thus, the initial electrical connection provided by the front conductive layer between the substrates 20 is broken, and the initial electrical connection provided by the back conductive layer between the substrates 20 is also broken. The substrates 20 may then be electrically connected in a different manner, for example, a front bus bar formed on a front conductive layer of a first processed substrate (first substrate) may be electrically connected to a rear bus bar formed on a rear conductive layer of a second processed substrate (second substrate) adjacent to the first processed substrate (first substrate). In some cases, the material of isolation gate 1603 may be a conductive material such that plasma utilized during the manufacturing process may be continuously directed. This facilitates continuous deposition on the surface of the substrate to form a conductive layer having a desired thickness. The isolation grid arrangement 160 may also help to achieve a uniform thickness of the conductive layer formed on each substrate.
It should be noted that isolation grid device 160 is not limited to the configuration shown, and in other embodiments, isolation grid device 160 may have other configurations. For example, in other embodiments, the isolation grid device 160 may be a magnetic tape configured as one or more (sized and/or shaped) for placement between adjacent substrates 20. During use, the tape is placed on the film 120 between the substrates 20. It may be that a first tape is placed on a first surface of the film 120 and a second tape is placed on a second surface (opposite the first surface) of the film 120. The magnetic tape prevents the deposition of conductive material on the opposite surfaces of the film 120 between the substrates 20. After the conductive layers are formed on the opposite surfaces of the substrate 20, the tape is removed to break up the conductive layers on each side into separate smaller conductive layers of the respective processed substrate 20.
In some cases, fig. 6H illustrates a method of coupling substrate 20 to film 120. As shown in fig. 6H (a), the frame 101 is prepared. Next, as shown in (b) of fig. 6H, the first film 120 is coupled to the upper and lower edges of the frame 101, and it can be seen that the first film 120 has a band shape. Then, referring to (c) of fig. 6H, the second film 120 is coupled vertically at the opening of the frame 101, and it can be seen that the second film 120 has a band shape and intersects the first film 120 at 90 °. Thus, a film opening is formed by the first film 120 and the second film 120. As can be seen, the second films 120 are uniformly distributed, so that the formed film openings 1201 are equal in size. As shown in fig. 6H (d), an adhesive is applied to the film 120 at the film opening 1201, and the substrate 20 is coupled to the film 120 by the adhesive to form a substrate strip. When substrate 20 is coupled to film 120, substrate 20 covers the respective film openings 1201, and substrate 20 covers the areas exposed by film openings 1201. Compared with the method shown in fig. 6D, the method shown in fig. 6H in which the substrate is coupled to the film can save more film material and help to reduce production cost because the film opening formed by cutting the film is avoided.
In some cases, two isolation grids 160 are provided for two opposing sides of the frame 120 to isolate the substrate 20 prior to placing the frame 120 within the preparation station 107. Specifically, a first isolation grid device 160 is disposed on a first surface of the film 120 to isolate the substrate 20 coupled to the first surface of the film 120, and a second isolation grid device 160 is disposed on a second surface (opposite the first surface) to isolate the space behind the respective wafer 20. The frame 120, along with the two isolation grids 160, is then transferred to different stations of the manufacturing system 10 for processing the substrates. After processing the substrates, the processed substrates are output to the storage station 112 along with the frame 120 and the isolation grid 160.
In some embodiments, frame 101 optionally includes one or more mechanical connectors configured to couple to one or more isolation grid devices 160. In some non-limiting examples, the mechanical connector may be a screw, a clamp, a snap-fit connector, a friction coupler, a clip, or the like.
In other cases, the frame 120 carrying the substrate 20 without the isolation grid arrangement 160 may be inserted into the preparation station 107. In this case, after inserting frame 120 into staging station 107, manufacturing system 10 may provide a load-bearing isolation grid arrangement 160. For example, one or more isolation grid devices 160 may be provided to couple to the frame 101 before/in/after the front film station 102, before/in/after the back film station 103, in the buffer station 110, or in the magnetron sputtering station 106. The isolated grid device (S)160 may then be separated from the frame 101 after the magnetron sputtering station 106 has formed the front and back conductive layers on the respective front and back surfaces of the processed substrate. Removal of the isolation grid device 160 from the frame 101 breaks up the front conductive layer into a separate smaller front conductive layer for the respective substrate and also breaks up the back conductive layer into a separate smaller back conductive layer for the respective substrate, as similarly discussed.
In other embodiments, isolation grid arrangement 160 is optional and manufacturing system 10 is not required to process substrate 20. If the spacer grid arrangement 160 is not disposed between the substrates 20, the front and back conductive layers would extend over the area between adjacent substrates 20. In this case, the front conductive layer can be decomposed using a laser device into individual smaller front conductive layers for the respective substrates 20. Similarly, the back conductive layer can also be broken down into separate smaller back conductive layers for the respective substrates 20 using a laser device or a separate laser device. By controlling the amount of energy of the laser, the depth of removal can be well controlled so that the front and back conductive layers between adjacent substrates 20 can be removed without damaging the thin film 120.
As previously discussed, the adhesive may be applied to the film 120 when the substrate is attached to the film 120. In some cases, some of the adhesive may extend to areas on the film 120 between the substrates. In this case, the adhesive at this region may be removed from the surface of the film 120 of the substrate before the spacer grid arrangement 160 is disposed on the film 120. Such a technique would prevent the spacer grid assembly 160 from adhering to the membrane 120. In an alternative technique, the adhesive is applied only to the areas of the film 120 configured to engage the substrates 20, thereby providing areas of the film 120 between the substrates 20 without adhesive. In another alternative technique, if some of the adhesive extends to an area on the film 120 between the substrates 20, an adhesive tape can be placed over the area to cover the adhesive (with the adhesive side of the adhesive tape in contact with the adhesive on the film 120). In other embodiments, another film may be placed over the area to cover the adhesive. In one embodiment, the substrate 20 may be coupled to the first film 120, and the second film 120 may be adhered to the first film 120 to cover the area between the substrates 20 that may include adhesive. The first film 120 may have a plurality of film openings, and the second film 120 may also have a plurality of film openings respectively corresponding to the film openings of the first film 120. The film openings of the second film 120 may be sized to accommodate the respective substrates 20 coupled to the first film 120. The film opening of the first film 120 may be smaller in size than the film opening of the second film 120 because the first film 120 needs to provide some area around the film opening to allow the substrate 20 to be coupled to the film opening.
It is noted that the isolation grid device 160 is not limited to the example of the configuration shown, and the isolation grid device 160 may have other configurations. For example, as shown in fig. 6G, in other embodiments, the isolation grid arrangement 160 may have an isolation grid configured to isolate groups of substrates 20.
Film station
As discussed above, the film station 102/103 is configured to dispose one or more layers on the surface of the substrate 20. The one or more layers (or films) may include an I layer and an N layer. In other cases, the layers may include I layers and P layers. Fig. 7 shows a top view of the film station 102/103, in particular showing the film station 102/103 with the first electrode 102a and the second electrode 102b, the first electrode 102a and the second electrode 102b being in an operative position for a substrate carried by the frame 101 for processing; FIG. 8 is a front view of the film station 102/103 of FIG. 7; fig. 9 illustrates a top view of film station 102/103, particularly illustrating first electrode 102a and second electrode 102b in a non-operative position.
As shown in fig. 7 and 8, the first electrode 102a and the second electrode 102b of the film station 102/103 are located on opposite sides of the frame 101. The first electrode 102a and the second electrode 102b may be moved toward the transfer rail 1012 or toward the frame 101 to form an enclosed space covering the substrate 20 to be processed. Movement of the first electrode 102a and the second electrode 102b may be accomplished by one or more drive devices in the manufacturing system 10. When the first electrode 102a and the second electrode 102b are in their respective operative positions, an enclosed space is formed overlying the substrate 20, and the first electrode 102a and the second electrode 102b are operated to deposit one or more layers onto the front surface of the substrate 20. The distance between the first electrode 102a and the substrate 20 can be adjusted to meet different processing requirements.
In some embodiments, the first electrode 102a (e.g., showerhead) may be independently movable relative to the front housing to adjust the process gap. The front housing may be grounded and may be disposed in contact with the frame 101 to form a closed loop for plasma (ground return). The second electrode 102b (e.g., heater) can be moved into close proximity to the membrane 120, but not in contact with the membrane 120 (e.g., this can be accomplished by using ceramic pins to ensure a small but fixed gap therebetween), preventing the heater from contacting the frame to avoid the heater from heating the frame. In some cases, the structure coupled to the second electrode 102b may be in contact with the frame 101 to provide support and seal the frame 101 against the front housing.
As shown in fig. 1A, the front film station 102 is configured to form a layer on a front surface of a substrate and the back film station 103 is configured to form a layer on the back surface of the substrate, wherein the frame 101 carrying the substrate is transported to a different film station 102/103. Thus, the deposition sources associated with the front and back film stations 102 and 102 are located on opposite sides of the transport path 100, respectively, and the back film station 103 has the same configuration as the front film station 103, since the front and back film stations 102 and 103 are configured to operate on opposite surfaces of the substrate, except that the electrodes 102a/102b of the back film station 103 are reversed (compared to the configuration of the front film station 102), and the configuration of the back film station 103 is the same as the configuration of the front film station 102. Thus, while the substrate is being processed (when the back surface of the substrate faces the second electrode 102b of the front film station 102), the front surface of the substrate faces the first electrode 102a of the front film station 102, and after the substrate is conveyed to the back film station 103, the front surface of the substrate faces the second electrode 102b of the back film station 103 (the back surface of the substrate faces the first electrode 102a of the back film station 103).
In some embodiments, electrodes 102a, 102b of film station 102/103 may not be configured with deposited films. The type of gas that is introduced into the processing station determines the type of thin film layer that is deposited. In conventional HIJ type PECVD, an I layer is typically deposited on both sides of the substrate prior to depositing the dopant layer (N or P) in order to passivate the exposed silicon surface in time to prevent oxidation or contamination of the dopants. In this embodiment, however, the deposition of both sides of the substrate with the I layer may occur in a relatively short time (by arranging the I layers in sequence on both sides of the substrate), so that the latency between the deposition of the intrinsic layer and the doped layer is short. Another advantage is that if the dry etch texture is performed in situ and then deposited by PECVD (without air ingress), there is less likelihood of oxide formation on the new silicon surface and, therefore, more consistent cell performance.
In some embodiments, electrodes 102a/102b of thin-film station 102/103 may be configured to form a back intrinsic layer (I-layer) on the back side of substrate 20 and a back doped layer (e.g., N-layer or P-layer) on the back side of substrate 20). In other embodiments, thin-film station 102/103 may include a back intrinsic station configured to form a back intrinsic layer (I-layer) and a back doping station configured to form a back doped layer (e.g., N-layer or P-layer) on the back surface of substrate 20. In this case, the back intrinsic station may have an electrode dedicated to forming the I layer (as shown in fig. 7), and the back doping station may also have an electrode dedicated to forming the doped layer (as shown in fig. 7).
In some cases, the first electrode 102a of the film station 102/103 may include a gas showerhead. In one embodiment, only the gas injection head is movable and bellows are provided on the periphery of the gas injection head to effect the seal. In another embodiment, the enclosure defining the chamber of the film station 102/103 and the gas showerhead may be independently moved to adjust the processing distance (e.g., gap).
In film station 102/103 of FIG. 7, the gas distribution plate serves as a powered electrode and the heater serves as a grounded electrode, where the heater may be movable or fixed. In some embodiments, the film station 102/103 may include a PECVD chamber.
As shown in fig. 9, when material deposition is not performed, the first electrode 102a and the second electrode 102b are moved away from each other and away from the frame 101. In this configuration, the frame 101 may be transported along the transport path 100 to another processing station. The process chamber of fig. 9 includes a central column or support through which the heater base is moved. In another embodiment, the enclosure defining the chamber of the film station 102/103 and the gas showerhead in FIG. 9 may be independently moved to adjust the processing distance (e.g., gap).
In other embodiments, film station 102/103 may have other configurations, and illustratively, FIGS. 10A, 10B, and 10C show a processing station having four legs around the heater base that provide a more uniform pressure to seal the heater from the upper portion of the chamber. In another embodiment, the enclosure defining the chamber of the film station 102/103 and the gas showerhead in fig. 10A, 10B, and 10C may be independently moved to adjust the processing distance (e.g., gap). Fig. 10A shows another film station 102. The film station 102 of fig. 10A is similar to the film station 102 of fig. 7, except that the film station 102 of fig. 10A also has heaters supported at the four corners (rather than the middle) of the heaters. A heater supporting four corners is advantageous because it allows the application of force at the periphery of the heater. The configuration of the membrane station 102/103 shown in FIG. 10A also allows for radio frequency return to be achieved on the grounded portion at the front chamber body and for a semi-seal to be formed to contain the reactive gas in the confined space between the upper and lower electrodes. Semi-hermetic means that the reactive gas is contained in the chamber with the pumping port also inside. External purge gas may be pushed inside this volume through some cracks/slots/openings on the frame 101, heaters and mechanical ground contacts.
Fig. 10B shows two film stations 102/103, each having the configuration shown in fig. 10A. In the illustrated embodiment, each film station is in processing mode. When in the processing mode, the housings of each film station located on opposite sides of the substrate 20, one housing having a heater and the other housing having a showerhead, are moved toward the frame 101 carrying the substrate 20. The showerhead is then operated to deposit material onto the substrate 20.
Fig. 10C shows film station 102/103 of fig. 10B in a transfer mode. When in the transfer mode, the housing of each film station on the opposite side of the substrate 20 moves away from the frame 101 and carries the substrate 20. The frame 101 carrying the substrate 20 may then be transported out of the film station.
In some embodiments, thin-film stations 102 may be configured to form intrinsic layers on a first side of the respective substrates, and thin-film stations 103 may be configured to form intrinsic layers on a second side (opposite the respective first side) of the respective substrates.
In other embodiments, thin-film station 102 may be configured to form a doped layer (e.g., an N-layer or a P-layer) on a first side of the respective substrate, and thin-film station 103 may be configured to form a doped layer (e.g., an N-layer or a P-layer) on a second side of the respective substrate (opposite the respective first side).
Magnetron sputtering station
As shown in fig. 1A, the magnetron sputtering station 106 includes a first magnetron sputtering device 106a and a second magnetron sputtering device 106b, wherein the first magnetron sputtering device 106a faces the front surface of the substrate (substrate) being processed, and the second magnetron sputtering device 106b faces the back surface of the substrate (substrate) being processed. Thus, the first magnetron sputtering device 106a and the second magnetron sputtering device 106b are located on opposite sides of the transport path 100. The first magnetron sputtering device 106a is configured to form a first conductive layer on the front surface of the processed substrate, and the second magnetron sputtering device 106b is configured to form a second conductive layer on the back surface (opposite to the first surface) of the processed substrate.
FIG. 11 is a schematic structural view of the magnetron sputtering devices 106a/106b of FIG. 1A, particularly illustrating the magnetron sputtering devices 106a/106b with the shutters 106c open. FIG. 12 is a schematic diagram of the structure of the magnetron sputtering devices 106a/106b, particularly illustrating that the magnetron sputtering devices 106a/106b do not deposit material because the shutters 106c are closed (i.e., the physical shielding of the shutters 106c prevents sputtered material from reaching the substrate). In particular, when the shutter 106c is opened, particles from the magnetron sputtering device 106a (or the magnetron sputtering device 106b) can reach the surface of the processed substrate (substrate) (fig. 11). When the shutter 106c is closed, particles from the magnetron sputtering device 106a or the magnetron sputtering device 106b cannot reach the surface of the processed substrate (fig. 12).
During use, the frame 101 carrying the substrate 20 (with the intrinsic and doped layers formed thereon) is transported to a first magnetron sputtering apparatus 106 a. The shutter 106c of the first magnetron sputtering apparatus 106a is opened to allow particles to be sputtered onto the front surface of the substrate 20, and then a front conductive layer is formed on the front surface of the substrate. The frame 101 carrying the substrate 20 is then transferred to a second magnetron sputtering apparatus 106 b. The shutter 106c of the second magnetron sputtering device 106b is opened to allow the particles to be sputtered onto the back surface of the substrate 20, and then a back conductive layer is formed on the back surface of the substrate.
In other embodiments, instead of forming the conductive front and back conductive layers on the front and back surfaces of the substrate 20, respectively, the magnetron sputtering devices 106a/106b can be arranged opposite to each other, thereby allowing the front and back conductive layers to be formed simultaneously on the front and back surfaces of the substrate 20, respectively.
In some embodiments, the front conductive layer is formed first, and the back conductive layer is formed. In other embodiments, the back conductive layer is formed first, and the front conductive layer is formed. It should be noted that the terms "front" and "back" are used to refer to two opposing sides of a planar object (e.g., substrate, module, etc.). The front conductive layer may be a first conductive layer and the back conductive layer may be a second conductive layer, or vice versa.
In some embodiments, the front conductive layer provided by magnetron sputtering device 106a may be an ITO layer and may have a conductive material attached to multiple substrates. Further, the back conductive layer provided by the magnetron sputtering device 106b may also be an ITO layer and may have a conductive material connected to a plurality of substrates. Because the substrates are connected to the membrane 120, the conductive layers on each side are formed to have a uniform configuration across the plurality of substrates. Subsequently, the conductive material is decomposed into individual conductive portions of the individual substrates, for example by removing the separate substrates and/or by means of laser-based isolation grid devices.
In some embodiments, the front conductive layer may extend to the edge of the front surface of the substrate. Further, in some embodiments, the back conductive layer can extend to a position on the back surface of the substrate away from the edge of the second surface of the substrate, thereby resulting in a gap between the end of the back conductive layer and the edge of the second surface of the substrate. The gap reduces the risk of the front conductive layer (e.g., ITO layer) contacting the back conductive layer (e.g., ITO layer) to create a short circuit. In some embodiments, the gap between the end of the back conductive layer and the edge of the substrate may be achieved by covering a peripheral portion of the second surface of the substrate to achieve a gap between the end of the back conductive layer and the edge of the base. Thus, the back conductive layer extends to the edge of the film opening (which exposes the second surface of the substrate). In other embodiments, the front conductive layer can extend onto the front surface of the substrate to a position away from the edge of the substrate, resulting in a gap between the end of the front conductive layer and the edge of the front surface of the substrate.
Substrate removal and frame preparation
As discussed with reference to item 182 in fig. 1B, after the substrates 20 carried by the frame 101 are processed into respective corresponding modules, the modules (which are coupled together by the membrane 120) are then removed from the frame 101. As shown in fig. 13, the substrate region in the middle of the film 120 is cut. The cut-out portion (e.g., first portion) of the membrane 120 becomes part of the module 30, which also includes the substrate (processed substrate 20). The substrates are joined together by a first (cut-out) portion of the film 120.
It should be noted that the substrate need not be removed from the cut-out portion of the film 120, and the cut-out portion of the film 120 will become part of the solar cell being formed. In particular, the modules 30 (including the substrates connected by the cut-off film 120) may be connected to other modules 30, and/or may be subjected to plastic encapsulation to form solar cells.
As shown in fig. 13, after the first portion of the film 120 is removed, the remaining (second) portion 40 of the film 120 remains attached to the peripheral portion 1010 of the frame 101. The remaining portion 40 of the membrane 120 is removed in order to prepare the frame 101 for processing the next set of substrates. The new film 120 is then coupled to the frame 101 for fabrication of the next solar cell. Therefore, the frame 101 can be used multiple times. This has the benefit of reducing manufacturing costs.
Solar cell
Referring to fig. 14, to form the solar cell 50, a first plastic layer 502 and a second plastic layer 503 may be deposited on opposing surfaces of the module 30. First plastic layer 502 and second plastic layer 503 may be plastic sealant layers. In one embodiment, first plastic layer 502 and second plastic layer 503 may be respective EVA films. A first glass 501 and a second glass 504 may also be placed on opposite sides of the module 30 to form the solar cell 50.
As discussed above, the module 30 includes a cut-off film 120 that becomes part of the solar cell 50. The cut-off film 120 has a plurality of film openings covered by respective substrates (the substrate 20 on which the intrinsic layer and the doped layer are formed), and the film openings are connected together by the cut-off film 120.
In some cases, each substrate of module 30 has a first intrinsic layer (I layer) and an N layer on a first I layer, where the first I layer and the N layer together can be considered a first (or front) thin film layer. Each substrate of module 30 also has a second intrinsic layer (I-layer) and a P-layer on the second I-layer, where the second I-layer and P-layer together can be considered a second (or back) thin film layer. In some embodiments, the first I layer and the second I layer may be made of amorphous silicon. Further, in some embodiments, the N layer may be a doped layer comprising amorphous and/or crystalline silicon doped with N-type ions, and the P layer may be a doped layer comprising amorphous and/or crystalline silicon doped with P-type ions.
In some cases, the solar cell 50 may be formed by connecting a plurality of modules 30 together to form an assembly. Fig. 15A shows a module 30 having a cut-off film 120 and a plurality of substrates 20 (processed substrates having intrinsic and doped layers) connected together by the cut-off film 120. Bus bars may be formed on opposite sides of the module 30 prior to connecting the module 30 with another module 30 (as similarly discussed with reference to item 181 of fig. 1B). In some embodiments, the bus bar is configured to collect and transmit charge from the solar cell. In the example shown, a first set of bus bars is formed on a first surface of the module 30, wherein the bus bars extend in parallel and to a first edge of the module 30. A second set of bus bars is formed on a second surface (opposite the first surface)) wherein the bus bars extend in parallel and to a second edge (opposite the first edge) of the module 30 the first and second sets of bus bars are parallel to each other. In other embodiments, the first set of bus bars and the second set of bus bars may form a non-zero angle with respect to each other.
FIG. 15B shows two modules 30a/30B coupled together to form an assembly 32. As shown in fig. 15B, the second module 30a overlaps the first module 30B along the side. Specifically, the second set of bus bars at the rear side of the second module 30b extend.
It should be noted that the assembly 32 is not limited to having two modules 30 coupled to each other, and the assembly 32 may have other numbers of modules 30. Fig. 15C shows 12 modules 30 coupled together to form an assembly 32, each module 30 having six substrates. Each module 30 has a first side (a first set of bus bars (e.g., top bus bar) extensions) that overlaps a first adjacent module 30, and also has a second side (a second set of bus bars (e.g., bottom bus bar) extensions) that overlaps a second adjacent module 30.
In some embodiments, because the top bus bar of one module 30 is aligned with the bottom bus bar of an adjacent module 30, when two modules 30 overlap each other, the top bus bar of one module 30 will be in electrical contact with the bottom bus bar of the adjacent module 30. in other embodiments, adhesive may be required, nor is adhesive required, and adjacent modules 30 may simply overlap each other.
After a plurality of modules 30 are coupled to one another to form an assembly 32, the assembly 32 may be further processed to form a solar cell 50. Fig. 16 shows the mounting of polymer film (e.g., EVA film) and glass to an assembly 32 having a plurality of modules 30. The polymer film is first disposed on the opposite surface of the module 32 and then the glass is disposed on the opposite side to accommodate the polymer film and the module 32. the thickness of the solar cell 50 may be between 50 microns and 300 microns, for example, between 100 microns and 180 microns.
In the embodiment described above and corresponding to fig. 15A-16, a plurality of modules 30 (each module 30 having a single row of processed substrates) are coupled together by stacking. In some embodiments, module 30 may have multiple rows of processed substrates coupled to a common membrane 120. In such cases, adjacent rows of processed substrates (substrates) on the same film 120 may be electrically connected to each other using. Fig. 17 shows a technique for making an electrical connection between two modules coupled to each other through a membrane. As shown in fig. 17, the film 120 connects the first substrate 20a and the second substrate 20 b. The first substrate 20a is coupled to the film 120 and covers the first film opening 1201 a. The second substrate 20b is coupled to the film 120 and connected on the second film opening 1201 b.
The first substrate 20a has been processed and includes an I layer and an N layer on a first surface of the first substrate 20a, and it further includes an I layer and a P layer on a second surface (opposite to the first surface) of the first substrate 20 a. The first substrate 20a further includes a front conductive layer and a back conductive layer.
Similarly, the second substrate 20b has been processed and includes an I layer and an N layer on a first surface of the second substrate 20b, and it further includes an I layer and a P layer on a second surface (opposite to the first surface) of the second substrate 20 b. The second substrate 20b further includes a front conductive layer and a back conductive layer. In some embodiments, each conductive layer may be an ITO layer.
As shown in fig. 17, a first set of bus bars (e.g., top bus bars) 36a and a second set of bus bars (e.g., bottom bus bars) 38a are formed by printing on opposite surfaces of the first substrate 20 a. Similarly, a first set of bus bars (e.g., top bus bars) 36b and a second set of bus bars (bottom bus bars) 38b are formed by printing on opposite surfaces of the second substrate 20 b. In some embodiments, the first set of bus bars 36a is connected to a surface of the front conductive layer (e.g., an ITO layer) and the second set of bus bars 38a is connected to a surface of the back conductive layer (e.g., an ITO layer).
To connect the top bus bar 36a of a first substrate 20a (also referred to as a base plate) to the bottom bus bar 38b of an adjacent second substrate 20b (also referred to as a base plate), a set of through holes 39 may be formed, for example, through the substrates 20a, 20b (also referred to as base plates). Next, conductive lines may be formed in the vias (and optionally on the surface of the substrates) to electrically connect the top bus bar 36a of the first substrate 20a to the bottom bus bar 38b of the second substrate 20 b.
In one embodiment, vias are formed in the film 120, and then top bus bars 36a/36b are formed on the top surface of the substrates 20a/20b (e.g., using printing techniques). Top bus bar 36a may overlap aperture 1201a and top bus bar 36b may overlap aperture 1201b such that the material of bus bars 36a/36b will sink into apertures 1201a/1201b, respectively. Material may pass completely through the holes 1201a/1201 b. Next, the substrates 20a/20b may be flipped. Bottom bus bars 38a/38b are then formed on the bottom surface of substrates 20a/20b (e.g., using printing techniques). Bottom bus bar 38b overlaps aperture 1201a to connect to top bus bar 36 a. In some cases, the material of bottom bus bar 38b may sink into hole 1201a (e.g., if the material of top bus bar 36a extends only partially within hole 1201a) to connect to top bus bar 36 a. In other cases, the material of bottom bus bar 38b may not sink into hole 1201a (e.g., if the material of bus bar 36a extends through hole 1201a) to connect to top bus bar 36 a. The bottom bus bar 38a is connected to the top bus bar of a previous substrate (not shown) in front of the substrate 20 a. The hole 1201b connects the top bus bar 36b of the substrate 20b to the bottom bus bar (not shown) of the next substrate. In some cases, each bus bar may be a printed silver wire.
Method
Fig. 18 illustrates a substrate processing method 1800 according to some embodiments. The substrate processing method 1800 includes:
s1802, providing a frame provided with a frame opening, a film configured to be coupled to the frame and cover at least a portion of the frame opening, coupling a substrate to the film provided with a film opening.
S1804, maintaining the frame, the film, and the substrate in a vertical orientation.
S1806, forming a first I layer on the first surface of the substrate when the substrate is in a vertical orientation.
S1808, forming a second I layer over a second surface of the substrate, the second surface of the substrate being opposite the first surface, when the substrate is in the vertical orientation.
S1810, forming an N layer over the first I layer of the substrate when the substrate is in a vertical orientation.
S1812, forming a P layer on the second I layer when the substrate is vertically oriented.
Alternatively, in method 1800, the first I layer, the N layer, the second I layer, and the P layer are formed by performing Plasma Enhanced Chemical Vapor Deposition (PECVD).
Optionally, the method 1800 further comprises: forming a first conductive layer over a first surface of a substrate; and forming a second conductive layer over the second surface of the substrate.
Optionally, in method 1800, the first conductive layer comprises a first ITO layer and the second conductive layer comprises a second ITO layer.
Optionally, the method 1800 further comprises: forming a first conductive line on a first surface of the substrate while the substrate is coupled to the film, the first conductive line being connected to a surface of the first conductive layer; and forming a second conductive line on a second surface of the substrate while the substrate is coupled to the film, the second conductive line being connected to a surface of the second conductive layer.
Optionally, in method 1800, the first conductive line extends beyond the first edge of the substrate.
Optionally, in the method 1800, the second conductive line extends beyond a second edge of the substrate, the second edge being opposite the first edge of the substrate.
Optionally, in method 1800, the substrate, at least a portion of the film, the first I layer, the N layer, the second I layer, the P layer, the first conductive layer and the second conductive layer together form a first module; and wherein the method further comprises connecting the first module and second module to form an assembly.
Optionally, in method 1800, the first module and the second module are connected using an adhesive.
Optionally, in the method 1800, the second module includes a second substrate, first conductive lines over a first surface of the second substrate, and second conductive lines over a second surface of the second substrate, the second surface of the second substrate being opposite the first surface of the second substrate; and wherein the first conductive lines on the first surface of the first substrate are electrically connected to the second conductive lines on the second surface of the second substrate when the first module and the second module are connected.
Optionally, method 1800 further comprises: placing a first polymer film and a second polymer film on opposite surfaces of a component; and clamping the first polymer film, the assembly and the second polymer film between the first glass and the second glass.
Optionally, in method 1800, the first module comprises a solar cell module.
Optionally, method 1800 further comprises texturing the first and second surfaces of the substrate while the substrate is in the vertical orientation, wherein the act of texturing is performed prior to the formation of the first I-layer, N-layer, second I-layer, and P-layer.
Optionally, method 1800 further includes moving the frame/film/substrate together to a plurality of processing stations, wherein the moving action is performed while the substrate is vertically oriented.
Optionally, method 1800 further comprises removing the film from the frame.
Optionally, in method 1800, the substrate is used to fabricate a solar module, and wherein the method further comprises coupling another membrane to the frame, and coupling another substrate to the membrane to fabricate another solar module.
Optionally, in method 1800, a peripheral portion of the membrane is coupled to and forms a seal with a portion of the membrane defining the membrane opening.
Optionally, in method 1800, the film includes an additional film opening, wherein an additional substrate is coupled to the film covering the additional film opening.
Optionally, method 1800 further includes providing a texturing process on the opposing surface of the substrate, the texturing process being accomplished using dry etching.
Optionally, method 1800 further includes, prior to the act of providing the texturing process, coupling the thin film with a first isolation grid, wherein the first isolation grid is coupled to the first surface of the thin film.
Optionally, method 1800 further includes coupling the thin film with a second isolation grid, wherein the second isolation grid is coupled to a second surface of the thin film, the second surface of the thin film being opposite the first surface of the thin film.
Optionally, in method 1800, a first isolation grid is configured to isolate the substrate from an additional substrate that is also coupled to the membrane, wherein at least a portion of the first isolation grid is located between the substrate and the additional substrate.
Optionally, method 1800 further includes forming a first conductive layer over the N layer and a second conductive layer over the P layer, wherein the first conductive layer extends over the substrate, across the space between the substrate and the additional substrate, and over the additional substrate.
Optionally, method 1800 further comprises removing the first isolation grid, wherein removing the first isolation grid removes portions of the first conductive layer that extend over the space between the substrate and the additional substrate, thereby electrically isolating the substrate and the additional substrate.
Optionally, method 1800 further includes removing a portion of the first conductive layer that spans the gap between the substrate and the additional substrate using a laser device.
Optionally, in method 1800, the substrate is processed to form a first module, and the method further comprises: forming a second module using the additional substrate; and electrically coupling conductive lines on the front surface of the first module with conductive lines on the second surface of the second module.
Optionally, in method 1800, the act of electrically coupling includes stacking a portion of the second module on a portion of the first module such that the conductive lines on the front surface of the first module are in contact with the conductive lines on the second surface of the second module.
Optionally, in method 1800, the act of electrically coupling comprises: creating a hole through the thickness of the film at a location between the substrate and the additional substrate; and forming an electrical conductor in the hole.
Variations of manufacturing systems
FIG. 19 shows a variation of manufacturing system 10, except that manufacturing system 10 depicted in FIG. 19 does not include a texturing station 104, and manufacturing system 10 of FIG. 19 is identical to manufacturing system 10 shown in FIG. 1A. In the manufacturing system 10 of fig. 19, there is a first pre-film station 102 configured to form an I layer on a first side of the substrate, and a second pre-film station 102 configured to form an N layer on the first side of the substrate. The system 10 also has a first film-backing station 103 configured to form an I layer on the second side of the substrate, and a second film-backing station 103 configured to form a P layer on the second side of the substrate. In some embodiments, the first front film station 102 and the first back film station 103 may be configured as microcrystalline layers of N-doped and P-doped layers. Furthermore, in some embodiments, the I layer may be an amorphous silicon (SI: H) layer. During use of the system 10 of fig. 19, a substrate carried by the frame 101 is subjected to a texturing process prior to entering the preparation chamber 107. In some cases, the texturing process is performed on the front and back surfaces of the substrate by dry etching in a dry etching chamber. In other cases, texturing is performed on the front and back surfaces of the substrate by wet etching.
The use of the terms first, second, third and fourth do not imply any particular order, but are included to identify individual elements. Moreover, the use of the terms first, second, etc. do not denote any order or importance, but rather the terms first, second, etc. are used to distinguish one element from another. Note that the first and second terms are used herein and elsewhere for purposes of notation, and are not intended to imply any particular spatial or temporal ordering. Furthermore, the labeling of a first element does not imply the presence of a second element and vice versa.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (49)

1. A system for manufacturing a solar cell, comprising:
a transport cavity in which a longitudinally shaped transfer rail is disposed, the longitudinally shaped transfer rail having a first side and a second side located at both sides of the transfer rail;
a movable frame and having a frame opening;
the membrane is adhered to the movable frame and has a plurality of membrane openings, the frame opening exposing a plurality of membrane openings, each membrane opening exposing a corresponding substrate attached to the membrane.
2. The manufacturing system of claim 1, further comprising a pre-film station;
the front film station has a first electrode on a first side of the transport track and a second electrode on a second side of the transport track, the first and second electrodes configured to move toward the transport track to form an enclosed space containing the substrate.
3. The manufacturing system of claim 2, wherein the front film station is configured to form a front film layer on the first surface of the substrate.
4. The manufacturing system of claim 2, further comprising a back film station;
the back film station has a first electrode on the second side of the transport track and a second electrode on the first side of the transport track, the first electrode of the back film station and the second electrode of the back film station being configured to move toward the transport track to form an enclosed space containing the substrate.
5. The manufacturing system of claim 4, wherein the back film station is configured to form a back film layer on the back surface of the substrate.
6. The manufacturing system of claim 5, wherein the front film station is configured to form the front film layer before the back film station forms the back film layer.
7. The manufacturing system of claim 5, wherein the back film station is configured to form the back film layer before the front film station forms the front film layer.
8. The manufacturing system of claim 5, further comprising a preparation station and a texturing station;
wherein the preparation station and the texturing station are both disposed before the front film station and the back film station, and the texturing station is configured to provide a texturing treatment on the front and back surfaces of the substrate.
9. The manufacturing system of claim 5, further comprising a magnetron sputtering station configured to process the substrate after the substrate is processed by the front film station and the back film station.
10. The manufacturing system of claim 9, wherein the magnetron sputtering station comprises a first magnetron sputtering device and a second magnetron sputtering device.
11. The manufacturing system of claim 10, wherein the first magnetron sputtering device is configured to face the first surface of the substrate and is configured to form a front conductive layer on the first surface of the substrate.
12. The manufacturing system of claim 11, wherein the second magnetron sputtering device is configured to face a back surface of the substrate and is configured to form a back conductive layer on the back surface of the substrate.
13. The manufacturing system of claim 1, further comprising an isolation gate station configured to dispose an isolation grid device on the first surface and the back surface of the thin film between adjacent substrates, respectively.
14. The manufacturing system of claim 8, wherein the texturing station comprises a dry etching apparatus.
15. The manufacturing system of claim 14, wherein the texturing station is located between the preparation station and the front/back film station.
16. The manufacturing system of claim 13, wherein the material of the isolation grid device comprises a conductor material and/or a tape material.
17. The manufacturing system of claim 9, further comprising a stamping station configured to form a through-hole through the film between adjacent substrates.
18. The manufacturing system of claim 17, further comprising a bus bar connection station located after the stamping station, the bus bar connection station configured to form electrical conductors in the through-holes such that conductive lines on a front surface of one substrate are electrically connected with conductive lines on a back surface of an adjacent substrate.
19. The manufacturing system of claim 12, further comprising a laser device configured to remove a portion of the front conductive layer and a portion of the back conductive layer between adjacent substrates.
20. The manufacturing system of claim 4, further comprising a loading station located after the preparation station and prior to the front film station and the back film station.
21. The manufacturing system of claim 9, further comprising a buffer chamber located after the front film station and the back film station and before the magnetron sputtering station.
22. The manufacturing system of claim 8, further comprising a pre-heat station located after the texturing station and before the front film station and the back film station.
23. The manufacturing system of claim 17, further comprising an unloading station located after the magnetron sputtering station and before the stamping station.
24. The manufacturing system of claim 1, wherein the film comprises polyimide, polyester, or polypropylene.
25. The manufacturing system of claim 1, wherein only a portion of the film around the film opening has adhesive properties.
26. The manufacturing system of claim 1, wherein the film comprises two planar pieces, one or each of the planar pieces having an adhesive surface, wherein the planar pieces are attached to each other via a last portion of the adhesive surface, wherein the film openings of one of the two planar pieces are in one-to-one correspondence with the film openings of the other of the two planar pieces.
27. The manufacturing system of claim 26, wherein the substrate is clamped between respective portions of two planar members of the film.
28. A method of manufacturing a solar cell, the method comprising:
providing a plurality of substrates, the plurality of substrates including a first substrate adhered to a film, a film opening in the film exposing a portion of the first substrate;
attaching the membrane to a movable frame;
and transporting the frame in a transport chamber along a transport track.
29. The manufacturing method according to claim 28, wherein the frame is transported to a first position where the opposing surfaces of the first substrate, including the front surface and the back surface, face the first electrode and the second electrode of the front film station, respectively; wherein the method further comprises: moving the first and second electrodes toward the frame to form an enclosed space containing the first substrate; and forming a front thin film layer on the front surface of the first substrate.
30. The manufacturing method according to claim 29, wherein the frame is transported to a second position where the opposite surfaces of the first substrate face the first electrode and the second electrode of the back film station, respectively; moving the first electrode and the second electrode of the back film station toward the frame to form an enclosed space containing the first substrate; and forming a back film layer on the rear surface of the first substrate.
31. The method of manufacturing of claim 30, further comprising texturing the front side and the back surface of the first substrate prior to forming the front or back film layer.
32. The method of manufacturing according to claim 30, wherein after forming the front thin film layer and the back thin film layer, the method further comprises forming a front conductive layer on the front thin film layer; and forming a back conductive layer on the back film layer.
33. A method of manufacturing according to claim 30, wherein the first and rear surfaces of the film are provided with an isolated grid device, respectively, prior to forming the front and rear conductive layers.
34. The method of manufacturing of claim 32, wherein at least a portion of the front conductive layer extends over a gap between the first and second substrates, and further comprising removing the portion of the front conductive layer.
35. The method of manufacturing of claim 34, wherein at least a portion of the back conductive layer extends over a gap between the first substrate and the second substrate, and further comprising removing the portion of the back conductive layer.
36. A method of manufacturing according to claim 33, wherein the portions of the front conductive layer and/or the portions of the back conductive layer are removed by removing the spacer grid device from the film.
37. The method of manufacturing according to claim 28, wherein a laser is used to remove a portion of the front conductive layer and/or a portion of the back conductive layer.
38. The method of manufacturing of claim 28, wherein after removing the portion of the front conductive layer between the first substrate and the second substrate, and after removing the portion of the back conductive layer between adjacent substrates, the method further comprises forming a through-hole between the first substrate and the second substrate that extends through the thin film.
39. The method of manufacturing of claim 38, wherein the first substrate and the second substrate are both connected to the film, and further comprising forming an electrical conductor in the via to connect a first bus bar at a first surface of the first substrate to a second bus bar at a second surface of the second substrate.
40. The method of manufacturing of claim 28, further comprising cutting a first portion of the film comprising the first substrate from a second portion of the film attached to the frame.
41. The method of manufacturing of claim 40, further comprising:
removing a remaining portion of the film coupled to the frame;
and reattaching a new film to the frame for fabrication of a next solar cell after the remaining portion of the film is removed from the frame.
42. A solar cell module comprising:
a first module having a first substrate having a first surface and a second surface opposite the first surface, the first module further having a first conductive line disposed on the first surface of the first substrate and a second conductive line disposed on the second surface of the first substrate;
a second module having a second substrate having a first surface and a second surface opposite the first surface, the second module further having a first conductive line disposed on the first surface of the second substrate and a second conductive line disposed on the second surface of the second substrate; and
a film comprising a first film opening and a second film opening, wherein the first substrate and the second substrate are coupled to a first surface of the film, wherein the first substrate covers the first film opening and the second substrate covers the second film opening;
wherein the thin film comprises a through hole at a position between the first substrate and the second substrate; and
wherein the first conductive lines of the first module are electrically connected to the second conductive lines of the second module via conductive lines located in the vias of the thin film.
43. The solar cell assembly of claim 42 wherein the first module further comprises a first I layer disposed on the first surface of the first substrate, a second I layer disposed on the second surface of the first substrate, an N layer disposed over the first I layer, and a P layer disposed over the second I layer.
44. The solar cell assembly of claim 43 further comprising a first polymer film and a second polymer film, wherein the first module, the second module and the film are positioned between the first polymer film and the second polymer film.
45. The solar cell assembly of claim 44 further comprising a first glass and a second glass, wherein the first polymer film and the second polymer film are between the first glass and the second glass.
46. A solar cell module, comprising:
a first module including a first film provided with a first film opening, and a first substrate covering the first film opening, wherein the first substrate has a first surface and a second surface opposite to the first surface, wherein the first module further has a first conductive line provided on the first surface of the first substrate, and a second conductive line provided on the second surface of the first substrate; and
a second module including a second film provided with a second film opening, and a second substrate covering the second film opening, wherein the second substrate has a first surface and a second surface opposite to the first surface, wherein the second module further has a first conductive line provided on the first surface of the second substrate, and a second conductive line provided on the second surface of the second substrate;
wherein a portion of the first conductive lines of the first module extend beyond an edge of the first substrate and are located on the first film;
wherein a portion of the second conductive lines of the second module extend beyond an edge of the second substrate and are located on the second film; and
wherein a portion of the second film overlaps a portion of the first film such that the first conductive line of the first module is electrically coupled to the second conductive line of the second module.
47. The solar cell assembly of claim 46 wherein the first module further comprises a first I layer disposed on the first surface of the first substrate, an N layer disposed on the I layer, a second I layer disposed on the second surface of the first substrate, and a P layer disposed on the second I layer.
48. The solar cell assembly of claim 47 further comprising a first polymer film and a second polymer film, wherein the first module, the second module, and the film are positioned between the first polymer film and the second polymer film.
49. The solar cell assembly of claim 48 further comprising a first glass and a second glass, wherein the first polymer film and the second polymer film are positioned between the first glass and the second glass.
CN202111148814.6A 2021-09-29 2021-09-29 Manufacturing method and manufacturing device of solar cell Active CN113903830B (en)

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US17/539,912 US11888082B2 (en) 2021-09-29 2021-12-01 Systems and methods for making solar panels or components thereof
TW111107726A TW202315152A (en) 2021-09-29 2022-03-03 Manufacturing method and manufacturing system of solar cell
US18/085,344 US11894482B2 (en) 2021-09-29 2022-12-20 Systems and methods for making solar panels or components thereof

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