CN113903818A - 一种perc电池的se激光掺杂图形和perc电池制备方法 - Google Patents
一种perc电池的se激光掺杂图形和perc电池制备方法 Download PDFInfo
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Abstract
本发明公开了一种PERC电池的SE激光掺杂图形,包括若干防断栅,所述防断栅在水平激光SE线上均匀排布且与水平激光SE线呈一夹角α,其中,10°≤α≤90°,在所述PERC电池的SE激光掺杂图形的顶部和/或底部还设置有若干降阻图形,所述降阻图形的一条边与水平方向的夹角为β,其中,10°≤β≤90°。本发明同时还提供一种PERC电池的制备方法。本发明通过设置防断栅,并且防断栅与水平激光SE线在水平方向有一夹角,便于丝网印刷,以解决印刷容易断栅和虚印,进而导致产品不良的问题。
Description
技术领域
本发明属于太阳能电池制备领域,更具体地说,涉及一种PERC电池的SE激光掺杂图形和PERC电池制备方法。
背景技术
晶体硅太阳能电池在制造过程中,特别是高效PERC(Passivated EmitterandRear Cell,发射极和背面钝化电池)+SE(选择极发射SelectiveEmitter)电池制作过程中,使用了激光SE技术,此技术的应用是在硅片扩散为高方阻,表面有一层厚的磷硅玻璃,激光打在硅片扩散面磷硅玻璃上,由于短暂的热作用使表面的磷硅玻璃磷扩散进入硅表面,形成磷重掺杂,即P++,印刷过程中P++处与金属接触形成欧姆接触,减少接触电阻,提高电池效率;未经过激光区域为轻掺杂,方阻较高,未有相匹配的浆料,接触性差,印刷浆料接触电阻较大,效率会偏低。
申请公布日为2020年5月19日,申请公布号为CN111180530A,专利名称为一种选择性发射极电池的制备方法的中国专利公开了一种技术方案,包括掺杂源扩散形成PN结和激光掺杂制作选择性发射极的步骤,其特征在于,所述激光掺杂制作选择性发射极的步骤中通过改变照射在硅片上欲金属化的区域激光的能量和光斑大小,使区域内所掺杂的元素富集,形成选择性发射极。该发明通过调整激光的能量和光斑大小,减小激光对电池片的损伤面积,实现SE在栅线接触区域和非接触区域实现不同的掺杂区,同时提升电池效率。
授权公告日为2021年7月27日,授权公告号为CN213798653U,专利名称为一种PERC电池正面DUP副栅对位结构的中国专利公开了一种技术方案,包括设置在电池正面上的SE激光MARK点和三道印刷图形,三道印刷图形包括三道主栅和对位孔,SE激光MARK点与所述三道印刷图形不重合。所述SE激光MARK点位于所述三道印刷图形之外。所述三道印刷图形是三道主栅,即对位孔在三道印刷网版确认位置后被遮挡而不会印刷在电池上。该实用新型的三道印刷图形包括三道主栅和对位孔,SE激光MARK点与三道印刷图形不重合,即为SE激光MARK点不被三道主栅和对位孔遮挡,印刷时,三道主栅和四道副栅均抓取SE激光MARK点,从而防止三道印刷对四道副栅印刷造成干扰,使得副栅印刷精准对位,从而解决EL雾状发黑问题。
此外,现有技术中在正面细栅网版设计采用防断栅和降阻图形设计,但激光SE图形只有水平细栅设计,未有在防断栅线和鱼叉区域打激光SE,但此处丝网印刷有正银浆料,接触处是高主阻,表面浓度低未能形成良好的欧姆接触,接触电阻大,进而影响电池效率的进一步提升。
发明内容
1.要解决的问题
针对现有技术中生产线在激光SE设计的图形的某些区域存在的接触电阻大,复合相对较高,导致电池填充较低,串阻增加,进而影响效率的进一步提升的问题,本发明提供一种PERC电池的SE激光掺杂图形和PERC电池的制备方法。
2.技术方案
为了解决上述问题,本发明所采用的技术方案如下:一种PERC电池的SE激光掺杂图形,包括若干防断栅,所述防断栅在水平激光SE线上均匀排布且与水平激光SE线呈一夹角α,其中,10°≤α≤90°,在所述PERC电池的SE激光掺杂图形的顶部和/或底部还设置有若干降阻图形,所述降阻图形的一条边与水平方向的夹角为β,其中,10°≤β≤90°。本技术方案通过设置防断栅和降阻图形,并且防断栅与水平激光SE线在水平方向有一夹角,降阻图形的一条边与水平方向呈一夹角,便于丝网印刷,能够更好地解决印刷容易断栅和虚印,进而导致产品不良的问题。
进一步地,所述防断栅在竖直方向上间隔设置。
进一步地,所述防断栅在竖直方向上间隔设置。
进一步地,所述降阻图形在竖直方向上的长度为0.5--20mm。
进一步地,所述防断栅与水平激光线的夹角α为30°≤α≤60°,所述降阻图形的一条边与水平方向的夹角β为30°≤β≤60°。
本发明还包括一种PERC电池制备方法,包括以下步骤:
S1:对硅片进行预处理;
S2:制备P-N结;
S3:SE激光掺杂;
S4:对硅片进行再处理;
S5:激光开槽;
S6:对硅片背面进行背电极和背电场的印刷;
S7:烧结测试;
其中,步骤S3具体为:在激光图形中设置防断栅,所述防断栅在水平激光SE线上均匀排布且与水平激光SE线呈一夹角α,其中,10°≤α≤90°。
进一步地,在所述步骤S3中的激光图形的顶部和/或底部还设置有若干降阻图形,所述降阻图形在水平方向上间隔设置,所述降阻图形的一条边与水平方向的夹角为β,其中,10°≤β≤90°。
进一步地,所述步骤S3中的激光器的光斑为方形光斑,光斑宽度40~150um,激光频率10~5000KHz,脉冲能量为10~120uJ/脉冲,单位面积功率为2~80J/cm2。
进一步地,所述步骤S1包括:对硅片表面进行清洗,使硅片表面形成三角形绒面。
进一步地,所述步骤S2包括:将经过步骤S1加工得到的硅片表面进行淀积掺杂源并进行热扩散制备P-N结;所述掺杂源为三氯氧磷和氧气。
进一步地,所述步骤S4包括:
S41、对硅片背面进行抛光、刻蚀和去除杂质处理;
S42、通过等离子体化学气相沉积使硅片正面形成氮化硅薄膜;
S43、通过原子层沉积技术或等离子体增强化学的气相沉积法沉积使硅片背面形成氧化铝薄膜;
S44、通过等离子体化学气相沉积使硅片背面形成氮化硅薄膜。
3.有益效果
相比于现有技术,本发明的有益效果为:
(1)本发明基于常规高效PERC+SE电池结构,在SE激光掺杂图形上,增加防断栅处激光SE、顶部和底部的降阻激光SE,激光参数与原保持一致,能提升电池的填充和降低串阻,进而提升电池效率;
(2)本发明结构简单,设计合理,易于制造。
附图说明
图1为本发明的工艺流程图;
图2为现有技术中SE激光掺杂图形示意图;
图3为本发明的SE激光掺杂图形示意图之一;
图4为本发明的SE激光掺杂图形示意图之二;
图5为本发明的SE激光掺杂图形示意图之三;
图6为本发明的SE激光掺杂图形示意图之四;
图7为本发明中的电池截面图。
图中:1:硅片正面;2;激光SE边框线;3:水平激光SE线;4:防断栅;5:降阻图形;11:铝背场;12:氮化硅层;13:氧化铝层;14:P型硅衬底;15:N型磷扩散层;16:氧化硅层;17:氮化硅减反层叠;18:正电极;19:背电极;20:激光SE掺杂层。
具体实施方式
下面结合具体实施例对本发明进一步进行描述。
如图1所示,本发明包括以下步骤:
步骤1:对硅片进行预处理:利用强酸或强碱对硅片表面进行腐蚀性清洗去损伤和双面制绒,使硅片表面形成三角形绒面,具体为:使用HF、HNO3、H2SO4、KOH、NaOH、Na2SiO3等和DI-water制成化学腐蚀溶液,同时为了优化工艺在碱溶液中加入添加剂,如异丙醇、(NH4)2S2O4、N2H4·H2O等,对硅片进行前清洗和表面制绒;
步骤2:制备P-N结:对硅片三氯氧磷高温扩散高方阻,具体为:将加工得到的硅衬底表面进行淀积掺杂源并进行热扩散制备P-N结;所述掺杂源为三氯氧磷和氧气,在高温扩散条件下时,加热时间30~60分钟,形成P-N结;在扩散过程中,POCl3采用氮气携带,流量携带氮气流量:700~1000sccm,时间:20~35分钟,携带量:POCl3 15~25g,氧气流量:500~700sccm,时间:30~45分钟,温度:830~870℃,制作出低表面浓度的PSG层,使扩散薄层方块电阻达到120Ω/sq提高到180Ω/sq,方块电阻标准差在5%以内;
步骤3:SE激光掺杂:制作SE激光掺杂图形,具体为:使用波长为532nm的激光辐照,根据电池正面电极图形设计SE激光掺杂图形,现有技术中的SE激光掺杂图形如图2所示,图2中,在和硅片正面1相对的硅片背面设置有激光图形,激光SE边框线2和水平激光SE线3,和现有技术相比,本发明在激光图形中增加了如图3所示的防断栅4和降阻图形5,以防止断栅和虚印的效果,进而提升电池的填充和降低串阻。
具体实施时,防断栅4在水平激光线3上均匀排布且与水平激光线3呈一夹角α,其中,10°≤α≤90°,防断栅4在竖直方向上可连续设置,也可间隔设置,所谓的间隔设置指的是在水平方向上,防断栅4排成一行,相邻两行防断栅4之间设置有一空行。在所述PERC电池的SE激光掺杂图形的顶部和底部还设置有若干降阻图形5,当然,也可以只在SE激光掺杂图形的顶部或底部设置若干降阻图形5,所述降阻图形5在水平方向上可连续设置,也可间隔设置,所谓的降阻图形5在水平方向行间隔设置指的是在相邻的两个降阻图形5不接触,当降阻图形5在竖直方向上的长度为0.5--20mm时,具有更好的效果。在本发明中,降阻图形5的作用系将高方阻降为低方阻,本领域技术人员应当理解,在本发明中其为降阻图形5,如果在丝网网版中,可以称为防隐裂图形,其作用是在丝网印刷过程中和印刷后防止电池片隐裂。
具体实施时,可将防断栅4设置成如图4所示的倾斜线,一般来说,当防断栅4与水平激光线3的夹角α为10°≤α≤90°时,有较好的防止断栅和虚印的效果,进一步地,当防断栅4与水平激光线3的夹角α为30°≤α≤60°时,效果更好,而当α为45°时,效果最好。降阻图形5可设置多种图形,包括图3和图4所示的长方形、如图5所示的鱼叉形或梯形、如图6所示的平行四边形,或者三角形、正方形(图中未示出)等等。降阻图形5的其中一条边与水平方向的夹角为β,其中,10°≤β≤90°时,有较好的防止断栅和虚印的效果,具体实施时,当30°≤β≤60°时,效果更好,而当β为45°时,效果最好。在本发明中,防断栅4和降阻图形5的角度可变,便于丝网印刷,以解决印刷容易断栅和虚印,进而导致产品不良的问题。
本发明在SE激光图形新设计增加防断栅4和降阻图形5处进行SE,进行激光局域烧蚀,激光图形改变后,对激光的速率、功率和虚实比做相应调整,在所述硅片的辐照区实现磷的低浓度掺杂而形成N-type发射极,制备得到初步的选择性发射结结构。具体实施时,本发明在扩散引入激光工艺,激光器选用Nd:YAG激光器,波长532nm,激光器安装整形镜,光斑为方形光斑,有利于减少激光对硅片的损伤,扫描速度为10-100000mm/s,光斑宽度40~150um,激光频率10~5000KHz,脉冲能量为10~120uJ/脉冲,单位面积功率为2~80J/cm2。
对硅片进行再处理:具体包括步骤4、步骤5、步骤6和步骤7,其中,
步骤4:对硅片背面进行抛光、刻蚀和去除玻璃杂质处理;具体为:对激光掺杂后的硅片进行清洗和背面抛光,通过HF、HNO3及H2SO4混合溶液和后续碱槽中KOH/NaOH溶液将硅片背面N型层腐蚀去除,并将正面的磷硅玻璃去除,去除背面PN结、周边PN结和磷硅玻璃层;并对硅片背表面进行3~8um抛光处理;
步骤5:通过等离子体化学气相沉积使硅片正面形成氮化硅薄膜;
步骤6:通过ALD(Atomic Layer Deposition,原子层沉积技术)或者PECVD(PlasmaEnhanced Chemical Vapor Deposition,等离子体增强化学的气相沉积法)沉积使硅片背面形成氧化铝薄膜;
步骤7:通过等离子体化学气相沉积使硅片背面形成氮化硅薄膜;具体为:按PERC工艺流程完成氧化退火,背面改进配方制备3~20nm的Al2O3背钝化层及100~150nm背面氮化硅减反射钝化保护膜层,翻转电池片正面PECVD沉积膜厚74~84nm的氮化硅减反射钝化保护膜层;
步骤8:背面激光图形开槽;具体为:在背面氮化硅镀膜层上,根据丝网印刷背面电极图形设计高阻密栅电池背面激光开槽图形,并做激光刻槽;
步骤9:丝网印刷并烧结;具体为:丝网印刷三、四道使用电池专用网版,在网印二、三、四道增加对位相机、升级对位软件,确保正、背面栅线精确印刷到SE区、背面激光开槽区,同时匹配SE+PREC单晶正电极专用浆料,低温快速烧结退火形成低电阻电池;
步骤10:测试并分选,具体为:在线测试电池的电池片电性能和EL,完成效率分档及外观检验,满足客户要求。对电池可靠性验证,测试正电极拉力、PID、LID等可靠性测试。
表1
项目 | 计数 | Eta | Voc | Isc | FF | Rsh | Rse | IRev2 |
BL | 4880 | 23.253 | 0.6862 | 11.401 | 81.54 | 263.3 | 0.00145 | 0.1433 |
实验组 | 7614 | 23.281 | 0.6858 | 11.398 | 81.68 | 314.8 | 0.00142 | 0.1302 |
通过上述结构进行实验得到结果如表1所示,本发明可以有效提升电池填充因子和降低串阻,最终实现提升电池光电转换效率,增加PERC电池在未来光伏市场中竞争力,降低PERC电池的度电成本。
制备完成后的电池截面图如图7所示,包括铝背场11、氮化硅层12、氧化铝层13、P型硅衬底14、N型磷扩散层15、氧化硅层16、氮化硅减反层叠17、正电极18、背电极19、激光SE掺杂层20,其中P型硅衬底14的上方设置有N型磷扩散层15,N型磷扩散层15的上方设置有氧化硅层16,氧化硅层16的上方设置有氮化硅减反层叠17,正电极18设置在N型磷扩散层15上,氧化铝层13设置在P型硅衬底14的下方,氧化铝层13的下方设置有氧化铝层13,氧化铝层13的下方设置有氮化硅层12,氮化硅层12的下方设置有铝背场11,背电极19设置在P型硅衬底14上,激光SE掺杂层20设置在N型磷扩散层15上。
Claims (10)
1.一种PERC电池的SE激光掺杂图形,其特征在于:包括若干防断栅,所述防断栅在水平激光SE线上均匀排布且与水平激光SE线呈一夹角α,其中,10°≤α≤90°,在所述PERC电池的SE激光掺杂图形的顶部和/或底部还设置有若干降阻图形,所述降阻图形的一条边与水平方向的夹角为β,其中,10°≤β≤90°。
2.根据权利要求1所述的PERC电池的SE激光掺杂图形,其特征在于:所述防断栅在竖直方向上间隔设置。
3.根据权利要求1或2所述的PERC电池的SE激光掺杂图形,其特征在于:所述降阻图形在竖直方向上的长度为0.5--20mm。
4.根据权利要求1或2所述的PERC电池的SE激光掺杂图形,其特征在于:所述防断栅与水平激光线的夹角α为30°≤α≤60°,所述降阻图形的一条边与水平方向的夹角β为30°≤β≤60°。
5.一种PERC电池制备方法,其特征在于:包括以下步骤:
S1:对硅片进行预处理;
S2:制备P-N结;
S3:SE激光掺杂;
S4:对硅片进行再处理;
S5:激光开槽;
S6:对硅片背面进行背电极和背电场的印刷;
S7:烧结测试;
其中,步骤S3具体为:在激光图形中设置防断栅,所述防断栅在水平激光SE线上均匀排布且与水平激光SE线呈一夹角α,其中,10°≤α≤90°。
6.根据权利要求5所述的PERC电池制备方法,其特征在于:在所述步骤S3中的激光图形的顶部和/或底部还设置有若干降阻图形,所述降阻图形在水平方向上间隔设置,所述降阻图形的一条边与水平方向的夹角为β,其中,10°≤β≤90°。
7.根据权利要求5或6所述的PERC电池制备方法,其特征在于:所述步骤S3中的激光器的光斑为方形光斑,光斑宽度40~150um,激光频率10~5000KHz,脉冲能量为10~120uJ/脉冲,单位面积功率为2~80J/cm2。
8.根据权利要求5或6所述的PERC电池制备方法,其特征在于:所述步骤S1包括:对硅片表面进行清洗,使硅片表面形成三角形绒面。
9.根据权利要求8所述的PERC电池制备方法,其特征在于:所述步骤S2包括:将经过步骤S1加工得到的硅片表面进行淀积掺杂源并进行热扩散制备P-N结;所述掺杂源为三氯氧磷和氧气。
10.根据权利要求9所述的PERC电池制备方法,其特征在于:所述步骤S4包括:
S41、对硅片背面进行抛光、刻蚀和去除杂质处理;
S42、通过等离子体化学气相沉积使硅片正面形成氮化硅薄膜;
S43、通过原子层沉积技术或等离子体增强化学的气相沉积法沉积使硅片背面形成氧化铝薄膜;
S44、通过等离子体化学气相沉积使硅片背面形成氮化硅薄膜。
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