CN113903671A - Preparation method of pre-plastic-sealed semiconductor packaging support - Google Patents
Preparation method of pre-plastic-sealed semiconductor packaging support Download PDFInfo
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- CN113903671A CN113903671A CN202111183641.1A CN202111183641A CN113903671A CN 113903671 A CN113903671 A CN 113903671A CN 202111183641 A CN202111183641 A CN 202111183641A CN 113903671 A CN113903671 A CN 113903671A
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 52
- 239000004065 semiconductor Substances 0.000 title claims abstract description 27
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 67
- 239000002184 metal Substances 0.000 claims abstract description 67
- 239000000463 material Substances 0.000 claims abstract description 60
- 238000005530 etching Methods 0.000 claims abstract description 55
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 40
- 239000011347 resin Substances 0.000 claims abstract description 26
- 229920005989 resin Polymers 0.000 claims abstract description 26
- 238000004519 manufacturing process Methods 0.000 claims abstract description 15
- 238000011049 filling Methods 0.000 claims abstract description 7
- 238000005520 cutting process Methods 0.000 claims abstract description 6
- 238000009713 electroplating Methods 0.000 claims description 10
- 239000011248 coating agent Substances 0.000 claims description 4
- 238000000576 coating method Methods 0.000 claims description 4
- 230000001681 protective effect Effects 0.000 claims description 4
- 229920002120 photoresistant polymer Polymers 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 11
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 8
- 239000010949 copper Substances 0.000 description 8
- 239000000243 solution Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 238000000227 grinding Methods 0.000 description 5
- 238000003466 welding Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 239000007769 metal material Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 229910001020 Au alloy Inorganic materials 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000003353 gold alloy Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 description 1
- 230000008676 import Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000012858 packaging process Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4803—Insulating or insulated parts, e.g. mountings, containers, diamond heatsinks
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
The invention discloses a preparation method of a pre-plastic-sealed semiconductor packaging support, which comprises the following steps of selecting a metal substrate, attaching a photosensitive developing material I on the metal substrate, carrying out exposure and development, exposing an area to be etched, and carrying out manufacturing and forming of the packaging support after the completion: etching the first surface and the second surface of the metal substrate to enable the metal substrate to be etched through to form a plurality of independent support units, and fixing the metal substrate in the etching process to avoid scattering of the plurality of support units; secondly, filling resin into gaps among the support units, and after the resin is cured, reconnecting the originally independent support units to form a whole to form a packaging support section; and thirdly, withdrawing the photosensitive developing material to expose the metal circuit, cutting the packaging support section into required sizes according to actual conditions, and fully wrapping each packaging support by packaging resin, so that the air tightness and reliability of the semiconductor packaging device are greatly improved.
Description
Technical Field
The invention belongs to the technical field of semiconductor packaging, and particularly relates to a preparation method of a pre-plastic-packaged semiconductor packaging support.
Background
The package support is a basic component for manufacturing semiconductor elements of integrated circuits, provides a carrier for chips of the integrated circuits, realizes the connection of the chips with external circuit board electric signals by means of bonding materials, and simultaneously provides heat conduction channels for the chips to release heat. The existing pre-plastic package support is complex in manufacturing process, and specifically comprises the steps of firstly carrying out exposure development, then electroplating an anti-etching layer, then washing a protective layer, and then etching, wherein the protective layer is usually made of a photosensitive developing material, and the quality of the domestic photosensitive developing material is not critical, so that the photosensitive developing material is burnt and scrapped due to high temperature generated during electroplating, and therefore imported materials are usually adopted for replacement, but the imported materials are very expensive, so that the cost is greatly increased, and the situation that a neck is pinched by an overseas supplier and the price is very important in a long day can be met;
in addition, the pre-plastic package injection molding equipment is very expensive, the pre-plastic package body is very easy to crack in the pre-plastic package support in the packaging process, the combination with a finished product plastic package body is not firm, and the like, so that the air tightness and the reliability of a semiconductor packaging device are greatly reduced.
Disclosure of Invention
The invention aims to provide a preparation method of a pre-plastic-encapsulated semiconductor packaging bracket, which aims to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme:
a method for preparing a pre-plastic-sealed semiconductor packaging support comprises the following steps of selecting a metal substrate, attaching a photosensitive developing material I on the metal substrate, carrying out exposure and development, exposing an area to be etched, and carrying out the following steps of manufacturing the packaging support after the completion:
etching the first surface and the second surface of the metal substrate to enable the metal substrate to be etched through to form a plurality of independent support units, and fixing the metal substrate in the etching process to avoid scattering of the plurality of support units;
secondly, filling resin into gaps among the support units, and after the resin is cured, reconnecting the originally independent support units to form a whole to form a packaging support section;
and thirdly, withdrawing the photosensitive developing material to expose the metal circuit, and cutting the packaging support section into required sizes according to actual conditions, so as to facilitate subsequent production and processing.
According to the technical scheme, in the first step, semi-etching treatment is simultaneously carried out on to-be-etched areas of a first surface and a second surface of a metal substrate, a first etching layer with a plurality of first grooves is formed on the first surface, a second etching layer with a plurality of second grooves is formed on the second surface, and the first grooves are not communicated with the second grooves.
In a further technical solution, in the first step, the fixing process of simultaneously etching the first surface and the second surface includes the steps of:
a. pasting a photosensitive developing material II on the surface I;
b. attaching a bearing plate on the second photosensitive imaging material;
and c, after the step a and the step b are finished, continuously etching the second groove to enable the first groove to be communicated with the second groove.
According to a further technical scheme, in the first step, the fixing treatment during the etching of the first surface and the second surface sequentially comprises the following steps:
a. firstly, attaching an anti-etching protective film on the second surface, then etching the area to be etched on the first surface, and forming an etching layer I with a plurality of grooves I on the metal substrate;
b. pasting a second photosensitive developing material on the first surface, and pasting a bearing plate on the second photosensitive developing material;
and c, after the step a and the step b are finished, firstly removing the anti-etching protective film on the second surface, etching the area to be etched on the second surface by using etching solution, forming an etching layer II with a plurality of grooves II on the metal substrate, and connecting the grooves I and II to form a packaging support unit.
In the first step, the surface of the metal substrate exposed after etching is roughened.
According to the further technical scheme, in the second step, resin is filled from the surface II to fill the grooves I and II, then the resin is cured, and the plurality of packaging support units are connected through the resin to form a whole again to form the packaging support section.
According to a further technical scheme, in the third step, grinding treatment is carried out on the second surface, and then the first photosensitive developing material, the second photosensitive developing material and the bearing plate are removed.
In a further technical scheme, in the third step, the metal circuits on the first surface and the second surface are subjected to solderability treatment.
In a further technical scheme, the solderability treatment is electroplating of a bondable metal coating.
According to a further technical scheme, the first photosensitive developing material and the second photosensitive developing material can be photoresist, a photosensitive dry film or photosensitive ink.
The invention has the beneficial effects that:
the invention provides a preparation method of a pre-plastic-sealed semiconductor packaging bracket, which creatively etches directly after exposure and development, does not need to treat an electroplating etching-resistant layer, obviously simplifies the processing steps compared with the prior art, can finish the processing steps by using domestic materials, does not need to import foreign expensive materials, greatly reduces the manufacturing cost, also achieves the corresponding technical effect, solves the cracking problem of the pre-plastic-sealed packaging bracket, solves the air tightness problem of the packaging bracket, and improves the yield and the reliability of a packaging device.
Drawings
FIG. 1: a process diagram of an embodiment of the invention.
FIG. 2: the second embodiment of the invention is a process diagram.
FIG. 3: the third process of the embodiment of the invention is schematically shown.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention,
referring to fig. 1-3 of the drawings,
the first embodiment is as follows:
a method for preparing a pre-plastic-sealed semiconductor packaging bracket comprises the steps of firstly selecting a metal substrate 1, wherein the metal substrate 1 can be made of metal materials such as copper, aluminum or iron, preferably copper is used for facilitating the conduction and heat dissipation of a semiconductor, and the thickness of the metal substrate 1 can be 0.1mm-0.25 mm; then, adhering a photosensitive developing material I2 on the metal substrate 1, carrying out exposure and development, exposing an area to be etched, and after the steps are completed, carrying out the following steps of manufacturing a packaging support:
firstly, etching the first surface 11 and the second surface 12 of the metal substrate 1 to etch the metal substrate 1 through to form a plurality of independent bracket units 6, fixing the metal substrate 1 in the etching process to prevent the plurality of bracket units 6 from scattering, wherein the fixing process in the embodiment is to attach a bearing plate 4 on a first photosensitive imaging material 2 on which the first surface 11 is positioned, and the metal substrate 1 cannot scatter after being etched through;
secondly, filling resin 7 into gaps among the support units 6, and after the resin 7 is cured, reconnecting the originally independent support units 6 to form a whole to form a packaging support section;
and thirdly, withdrawing the photosensitive imaging material I2 to expose the metal circuit, and cutting the packaging support section into required sizes according to actual conditions, so that the subsequent production and processing are facilitated.
In the preparation method, the photosensitive developing material has the etching-resistant effect, so that the etching is creatively directly carried out after the exposure and the development, the treatment of electroplating an etching-resistant layer is not needed, the processing steps are obviously simplified compared with the prior processing steps (the invention only needs to electroplate once when the binding position is manufactured, the electroplating is obviously simplified for a plurality of times compared with the prior processing steps, and the operation is easier), the processing steps can be completed by using domestic materials, the imported foreign materials with high price are not needed, the manufacturing cost is greatly reduced, and the corresponding technical effects are also achieved, namely: the packaging support units 6 which are separated and independent after etching are plastically packaged into an integral packaging support section, so that each support unit 6 does not need to be connected with a lead as a support, and a bearing plate 4 and the like do not need to be additionally arranged as a reinforcing support.
Example two:
a method for preparing a pre-plastic-sealed semiconductor packaging bracket comprises the steps of firstly, selecting a metal substrate 1, wherein the metal substrate 1 can be made of metal materials such as copper, aluminum or iron and the like which are convenient to produce and process, preferably copper is used for facilitating the conduction and heat dissipation of a semiconductor, and the thickness of the metal substrate 1 can be 0.1mm-0.25 mm; then, attaching a photosensitive developing material 2 on the metal substrate 1, and performing exposure and development to take out the circuit of the area to be etched, in this embodiment, the process of performing exposure and development is: respectively pasting a photosensitive developing material one 2 on the first surface 11 and the second surface 12, performing exposure and development processing on one surface, and then processing the other surface, or performing exposure and development processing on the first surface 11 and the second surface 12 simultaneously, printing circuits on the first surface 11 and the second surface 12 by exposure and development, wherein the exposure energy is 70-90mj/cm, the exposure ruler is 7-8 last step, the concentration of a developing solution (Na 2Co 3/H2O) is 0.8-1.2wt%, the temperature is 28-34 degrees, the pressure is 1.5-2.0kg/cm, and the development time is 40-48 seconds, and the parameters of exposure and development can be properly adjusted according to the circuit requirement precision to be in an optimal exposure and development environment, and then performing the following steps of manufacturing and forming a packaging support after completion:
firstly, semi-etching treatment is simultaneously carried out on the areas to be etched of a first surface 11 and a second surface 12 of a metal substrate 1, an etching layer I with a plurality of grooves I3 is formed on the first surface 11, an etching layer II with a plurality of grooves II 5 is formed on the second surface 12, at the moment, the grooves I3 are not communicated with the grooves II 5, then a photosensitive developing material II 8 is pasted on the first surface 11, a bearing plate 4 is pasted on the photosensitive developing material II 8, the fixing treatment of the metal substrate 1 is completed, in the fixing treatment process of the embodiment, after the bearing plate 4 is pasted with the photosensitive developing material II 8, the whole metal substrate 1 is put into a film pressing machine to be pressed, the thickness of the photosensitive developing material II 8 is larger than that of the photosensitive developing material I2, at the moment, part of the photosensitive developing material II 8 enters the grooves I3, second etching treatment is carried out on the second surface 12, so that the grooves I3 are communicated with the grooves II 5, due to the blocking of the photosensitive developing material II 8, the etching solution can be prevented from leaking out of the first groove 3 to corrode the first surface 11,
at the moment, the metal substrate 1 is etched through to form a plurality of independent bracket units 6, and the plurality of bracket units 6 are prevented from scattering because the metal substrate 1 is fixed;
secondly, filling resin 7 from the second surface 12 to make the first groove 3 and the second groove 5 filled with the resin 7, then curing the resin 7, and connecting the plurality of packaging support units 6 through the resin 7 to form a whole again to form a packaging support section;
and thirdly, removing the bearing plate 4, removing the first photosensitive developing material 2 and the second photosensitive developing material 8 by using a film removing liquid, leaving a vacancy in the first groove 3 after the second photosensitive developing material 8 is removed, facilitating subsequent processing and use, grinding the second surface 12 to expose the metal circuit on the second surface 12, performing weldability treatment on the metal circuit on the first surface 11, and roughening the metal circuit on the second surface 12, wherein the weldability treatment is electroplating a bondable metal coating, and finally cutting the packaging support profile into required sizes according to actual conditions, thereby facilitating subsequent production and processing.
In the embodiment, a resin semi-pre-plastic package mode is creatively adopted to package the dispersed and independent packaging support units into an integral packaging support section bar, so that each support unit does not need to be connected with a lead as a support, and a space for embedding a finished product plastic package body is reserved, thereby not only solving the cracking problem of the pre-plastic package support, but also solving the air tightness problem of the packaging support and improving the yield and reliability of the packaging device.
Example three:
a method for preparing a pre-plastic-sealed semiconductor packaging bracket comprises the steps of firstly, selecting a metal substrate 1, wherein the metal substrate 1 can be made of metal materials such as copper, aluminum or iron and the like which are convenient to produce and process, preferably copper is used for facilitating the conduction and heat dissipation of a semiconductor, and the thickness of the metal substrate 1 can be 0.1mm-0.25 mm; then, attaching a photosensitive developing material 2 on the metal substrate 1, and performing exposure and development to take out the circuit of the area to be etched, in this embodiment, the process of performing exposure and development is: respectively attaching a photosensitive developing material one 2 on the first surface 11 and the second surface 12, performing an exposure and development process on one surface, and then processing the other surface, or performing an exposure and development process on the first surface 11 and the second surface 12 simultaneously, printing a circuit on the first surface 11 and the second surface 12 by an exposure and development method, wherein the exposure energy is 70-90mj/cm, the exposure ruler is 7-8 last step, the concentration of a developing solution (Na 2Co 3/H2O) is 0.8-1.2wt%, the temperature is 28-34 degrees, the pressure is 1.5-2.0kg/cm, and the development time is 40-48 seconds, and the parameters of exposure and development can be properly adjusted according to the circuit requirement precision to be in an optimal exposure and development environment, and then performing the following steps of manufacturing a packaging support after completion:
firstly, etching the to-be-etched areas on the first surface 11 and the second surface 12 of the metal substrate 1 in sequence, firstly etching the to-be-etched areas on the first surface 11 to form an etching layer I with a plurality of grooves I3 on the metal substrate 1, then pasting a photosensitive developing material II 8 on the first surface 11, and pasting a bearing plate 4 on the photosensitive developing material II 8, in the fixing treatment process of the embodiment, after the bearing plate 4 is pasted with the photosensitive developing material II 8, putting the bearing plate 4 and the metal substrate 1 together into a film pressing machine for pressing, wherein the thickness of the photosensitive developing material II 8 is larger than that of the photosensitive developing material I2, at the moment, part of the photosensitive developing material II 8 enters the grooves I3, then etching the to-be-etched areas on the second surface 12 by using an etching solution, and forming an etching layer II with a plurality of grooves II 5 on the metal substrate 1, at the moment, the first groove 3 and the second groove 5 are communicated and form a packaging support unit 6, and due to the blocking of the second photosensitive developing material 8, the etching solution can be prevented from leaking out of the first groove 3 and corroding the first surface 11;
at the moment, the metal substrate 1 is etched through to form a plurality of independent bracket units 6, and the plurality of bracket units 6 are prevented from scattering because the metal substrate 1 is fixed;
secondly, filling resin 7 from the second surface 12 to make the first groove 3 and the second groove 5 filled with the resin 7, then curing the resin 7, and connecting the plurality of packaging support units 6 through the resin 7 to form a whole again to form a packaging support section;
and thirdly, removing the bearing plate, the first photosensitive development material 2 and the second photosensitive development material 8, leaving a vacancy in the first groove 3 for facilitating subsequent processing and use, grinding the second surface 12 to expose the metal circuit on the second surface 12, performing weldability treatment on the metal circuit on the first surface 11, performing coarsening treatment on the metal circuit on the second surface 12, wherein the weldability treatment is electroplating of a bondable metal coating, and finally cutting the packaging support profile into required sizes according to actual conditions to facilitate subsequent production and processing.
In addition, high-temperature-resistant plating-resistant protection can be firstly carried out on the second surface, the surface of the metal base material with the exposed first surface 11 is roughened, the resin 7 is filled in the groove 3, then solidification grinding treatment is carried out, and the welding pad with the exposed first surface 11 is subjected to solderability electroplating treatment after grinding, (the welding pad can be electrolytic copper or electrolytic nickel, the welding pad can be electrolytic silver or electrolytic gold, the welding pad can be electrolytic copper or electrolytic nickel, the welding pad can be soft gold, nickel-gold alloy or nickel-palladium-gold alloy).
It will be evident to those skilled in the art that the invention is not limited to the details of the foregoing illustrative embodiments, and that the present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.
Furthermore, it should be understood that although the present description refers to embodiments, not every embodiment may include only a single embodiment, and such description is for clarity only, and those skilled in the art will be able to make the description as a whole, and the embodiments may be appropriately combined to form other embodiments as will be apparent to those skilled in the art.
Claims (10)
1. A preparation method of a pre-plastic-encapsulated semiconductor packaging support is characterized by comprising the following steps: firstly, selecting a metal substrate (1), then attaching a photosensitive developing material I (2) on the metal substrate (1), then carrying out exposure and development, exposing an area to be etched, and then carrying out the following steps of manufacturing a packaging support and forming:
firstly, etching treatment is carried out on a first surface (11) and a second surface (12) of a metal substrate (1) to enable the metal substrate (1) to be etched through to form a plurality of independent support units (6), and the metal substrate (1) is fixed in the etching process to avoid scattering of the plurality of support units (6);
secondly, filling resin (7) into gaps among the support units (6), and after the resin (7) is cured, reconnecting the originally independent support units (6) to form a whole to form a packaging support section;
and thirdly, withdrawing the photosensitive developing material I (2) to expose the metal circuit, and cutting the packaging support section into required sizes according to actual conditions, so that the subsequent production and processing are facilitated.
2. The method for preparing a pre-molded semiconductor package support according to claim 1, wherein the method comprises the following steps: in the first step, half etching treatment is simultaneously carried out on areas to be etched of a first surface (11) and a second surface (12) of a metal substrate (1), an etching layer I with a plurality of first grooves (3) is formed on the first surface (11), an etching layer II with a plurality of second grooves (5) is formed on the second surface (12), and the first grooves (3) are not communicated with the second grooves (5).
3. The method for preparing a pre-molded semiconductor package support according to claim 2, wherein the method comprises the following steps: in a first step, the fixing process for simultaneously etching the first surface (11) and the second surface (12) comprises the following steps:
a. pasting a photosensitive developing material II (8) on the surface I (11);
b. attaching a bearing plate (4) on the second photosensitive developing material (8);
and after the step a and the step b are finished, continuously etching the second groove (5) to enable the first groove (3) to be communicated with the second groove (5).
4. The method for preparing a pre-molded semiconductor package support according to claim 1, wherein the method comprises the following steps: in the first step, the fixing process for sequentially etching the first surface (11) and the second surface (12) includes the steps of:
a. firstly, attaching an anti-etching protective film on the second surface (12), then etching the area to be etched on the first surface (11), and forming an etching layer I with a plurality of grooves I (3) on the metal substrate (1);
b. pasting a second photosensitive developing material (8) on the first surface (11), and pasting the second photosensitive developing material (8) on the bearing plate (4);
and (c) after the step (a) and the step (b) are finished, firstly removing the anti-etching protective film on the second surface, etching the area to be etched on the second surface (12) by using an etching solution, forming a second etching layer with a plurality of second grooves (5) on the metal substrate (1), and communicating the first grooves (3) with the second grooves (5) to form a packaging support unit (6).
5. The method for preparing a pre-molded semiconductor package support according to claim 1, wherein the method comprises the following steps: in the second step, the surface of the metal substrate exposed after etching is roughened.
6. The method for preparing a pre-molded semiconductor package support according to claim 3 or 4, wherein the method comprises the following steps: and in the second step, filling resin (7) from the second surface (12) to make the first groove (3) and the second groove (5) filled with the resin (7), then curing the resin (7), and connecting the plurality of packaging support units (6) through the resin (7) to form a whole again to form the packaging support profile.
7. The method for preparing a pre-molded semiconductor package support according to claim 5, wherein the method comprises the following steps: in the third step, the second surface (12) is ground, and then the first photosensitive developing material (2), the second photosensitive developing material (8) and the bearing plate are removed.
8. The method for preparing a pre-molded semiconductor package support according to claim 6, wherein the method comprises the following steps: in a third step, the metal lines on surface one (11) and surface two (12) are solderable.
9. The method for preparing a pre-molded semiconductor package support according to claim 7, wherein: the solderability treatment is electroplating a bondable metal coating.
10. The method for preparing a pre-molded semiconductor package support according to claim 8, wherein: the first photosensitive developing material (2) and the second photosensitive developing material (8) can be photoresist, photosensitive dry film or photosensitive ink.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117855147A (en) * | 2024-01-05 | 2024-04-09 | 山东瑞启微电子科技有限公司 | Thermal matching type TMV carrier plate and manufacturing method thereof |
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| US20170365534A1 (en) * | 2016-06-17 | 2017-12-21 | J-Devices Corporation | Manufacturing method of semiconductor package |
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