CN113900306B

CN113900306B - Pixel structure

Info

Publication number: CN113900306B
Application number: CN202111213833.2A
Authority: CN
Inventors: 龚晏瑩; 王奕筑; 郑伟成
Original assignee: AU Optronics Corp
Current assignee: AU Optronics Corp
Priority date: 2018-06-25
Filing date: 2018-09-05
Publication date: 2023-06-16
Anticipated expiration: 2038-09-05
Also published as: TW202001381A; CN109116638A; CN113900306A; CN109116638B; TWI668504B

Abstract

The invention discloses a pixel structure, which comprises a substrate and a pixel electrode. The pixel electrode is disposed on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The first main pattern and the second main pattern are staggered to distinguish at least four areas, the branch patterns are respectively positioned in the areas, one end of each branch pattern positioned in each area is connected with at least one of the first main pattern and the second main pattern, any two adjacent branch patterns are separated, a plurality of first slits are arranged between the other ends of the branch patterns which are most adjacent to at least one of the first main pattern and the second main pattern and the peripheral pattern, and the other ends of the rest branch patterns are connected with the peripheral pattern.

Description

Pixel structure

The application is a divisional application, the application number of the main application is 201811031369.3, the application is by the photoelectric share company, the application date is 2018, 9, 5 and the name of the invention is a pixel structure.

Technical Field

The present invention relates to a semiconductor structure, and more particularly, to a pixel structure.

Background

With the rapid development of large-sized liquid crystal display panels, the liquid crystal display panels must have a wide viewing angle characteristic, so as to meet the use requirements. In order to provide a liquid crystal display panel with a higher contrast ratio and a wider viewing angle, the pixel electrodes generally include different alignment directions, so that the liquid crystal molecules in the different alignment regions can tilt toward different directions under an applied voltage. However, the electric field at the boundary of different alignment directions may cause the liquid crystal molecules to tilt too much toward the extending direction at the boundary of different alignment directions due to the excessive fringe electric field effect, so that dark lines may be generated and the liquid crystal efficiency may be reduced when forming the display screen, and the transmittance may be reduced to seriously affect the display quality.

Disclosure of Invention

The invention provides a pixel structure with high resolution (such as 4K, 6K and 8K), which can reduce the area of dark fringes and improve the transmittance.

An embodiment of the invention provides a pixel structure. The pixel structure of the present embodiment includes a substrate and a pixel electrode. The pixel electrode is disposed on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The tail end of the first main pattern and the tail end of the second main pattern are connected with part of the peripheral pattern. The first main pattern is staggered with the second main pattern to distinguish at least four areas. The plurality of branch patterns are respectively positioned in at least four areas. One end of each branch pattern located in each region is connected with at least one of the first main pattern and the second main pattern. And a plurality of first slits having a plurality of widths between the other ends of the partial plurality of branch patterns and the partial peripheral pattern in each region. Any two adjacent multiple branch patterns are separated.

Another embodiment of the present invention provides a pixel structure. The pixel structure of the present embodiment includes a substrate and a pixel electrode. The pixel electrode is disposed on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The peripheral pattern includes at least two first peripheral patterns and at least two second peripheral patterns spaced apart from the first peripheral patterns. The first main pattern is staggered with the second main pattern to distinguish at least four areas. The plurality of branch patterns are respectively positioned in at least four areas. One end of each branch pattern located in each region is connected with at least one of the first main pattern and the second main pattern. Any two adjacent multiple branch patterns are separated. Each first peripheral pattern is connected with at least one other end of the first part of the plurality of branch patterns which are far away from the second main pattern and each tail end of the first main pattern. And the other branch patterns which are not connected with each first peripheral pattern in the first part of the plurality of branch patterns are respectively provided with a plurality of first slits between the other branch patterns and the peripheral patterns. Each second peripheral pattern is connected with at least one other end of the second part of the plurality of branch patterns which are far away from the first main pattern and each tail end of the second main pattern.

Yet another embodiment of the present invention provides a pixel structure. The pixel structure of the present embodiment includes a substrate and a pixel electrode. The pixel electrode is disposed on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The peripheral pattern includes at least two first peripheral patterns and at least two second peripheral patterns spaced apart from the first peripheral patterns. The first main pattern is staggered with the second main pattern to distinguish at least four areas. The plurality of branch patterns are respectively positioned in at least four areas. One end of each branch pattern located in each region is connected with at least one of the first main pattern and the second main pattern. Any two adjacent branch patterns are separated to form a notch between each first peripheral pattern and the other ends of the branch patterns located in two of at least four areas. Each second peripheral pattern is located in each notch.

Still another embodiment of the present invention provides a pixel structure. The pixel structure of the present embodiment includes a substrate and a pixel electrode. The pixel electrode is disposed on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The first main pattern is staggered with the second main pattern to distinguish at least four areas. The plurality of branch patterns are respectively positioned in at least four areas. One end of each branch pattern located in each region is connected with at least one of the first main pattern and the second main pattern. Any two adjacent multiple branch patterns are separated. The plurality of branch patterns are adjacent to at least two other ends of at least one of the first main pattern and the second main pattern, a plurality of first slits are arranged between the other ends of at least one of the first main pattern and the second main pattern, and the other ends of the rest branch patterns are connected with the peripheral pattern.

Based on the above, the present invention can avoid the problem that the liquid crystal molecules excessively topple over in the second direction (and the opposite direction) at the intersection of the peripheral pattern and the first main pattern (i.e. at the boundary of the first main pattern) when aligning, due to the plurality of first slits arranged between the plurality of branch patterns and the peripheral pattern, thereby improving the dark streak (disclination line) at the intersection of the peripheral pattern and the first main pattern. In addition, since the width of the plurality of first slits in the second direction gradually decreases from the portion of the maximum width along the direction of the first direction or the direction opposite to the first direction, and the minimum width is formed at the intersection of the first side and the second side of the peripheral pattern, the liquid crystal molecules at the intersection of the first side and the second side adjacent to the peripheral pattern can be less affected by the first slits in alignment, and thus the alignment of the liquid crystal molecules is substantially uniform and consistent. Therefore, the pixel structure of at least one embodiment of the invention has high resolution (e.g., 4K, 6K, 8K).

In order to make the above features and advantages of the present invention more comprehensible, embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1 is a schematic top view of a pixel structure according to a first embodiment of the invention.

Fig. 2 is a schematic top view of a pixel structure according to a second embodiment of the invention.

Fig. 3 is a schematic top view of a pixel structure according to a third embodiment of the invention.

Fig. 4 is a schematic top view of a pixel structure according to a fourth embodiment of the invention.

Fig. 5 is a schematic top view of a pixel structure according to a fifth embodiment of the invention.

Fig. 6 is a schematic top view of a pixel structure according to a sixth embodiment of the invention.

Fig. 7 is a schematic top view of a pixel structure according to a seventh embodiment of the invention.

Fig. 8 is a schematic top view of a pixel structure according to a first comparative example.

Fig. 9 is a schematic top view of a pixel structure according to a second comparative example.

Fig. 10 is a schematic top view of a pixel structure according to a third comparative example.

Fig. 11A is an optical simulation image of the pixel structure according to the first embodiment of the invention of fig. 1 taken under an optical microscope.

Fig. 11B is an optical simulation image taken under an optical microscope of the pixel structure according to the first comparative example of fig. 8.

Fig. 11C is an optical simulation image taken under an optical microscope of the pixel structure according to the second comparative example of fig. 9.

Fig. 11D is an optical simulation image of the pixel structure according to the fifth embodiment of the invention shown in fig. 5 taken under an optical microscope.

Fig. 11E is an optical simulation image of the pixel structure according to the sixth embodiment of the invention shown in fig. 6 taken under an optical microscope.

Fig. 11F is an optical simulation image of the pixel structure according to the seventh embodiment of the invention shown in fig. 7 taken under an optical microscope.

Fig. 11G is an optical simulation image taken under an optical microscope of the pixel structure according to the third comparative example of fig. 10.

Wherein, the reference numerals:

10. 20, 30, 40, 50, 60, 70, 10', 20', 30': pixel structure

100: substrate board

200: pixel electrode

200a1, 200a2, 200a3, 200a4: region(s)

210: first main pattern

210a, 220a, 230a_1, 230a_2, 232a_1, 232a_2, 232b_1, 232b_2: tail end 220: second main pattern

230. 230p1_1, 230p2_1, 232: branching pattern

230p1: first part

230p2: second part

230S1: first slit

230S2: second slit

230S3, 230s3_1: third slit

232a, 232b: stripe pattern

240: peripheral pattern

240L, 242L: first edge

240O: notch

240S, 242S: second edge

242: first peripheral pattern

244: second peripheral pattern

244S: outer side edge

300: common electrode

300G: gap of

CL: signal line

D: drain electrode

DL: data line

D1: first direction

D2: second direction

G: grid electrode

L1: length of

R1, R2, R3, R4, R5: region(s)

S: source electrode

SE: semiconductor layer

SL: scanning line

W1, W2, W3, W4, W31, W32, W42: width of (L)

W1 _max 、W2 _max 、W3 _max 、W4 _max : maximum width of

W1 _min 、W2 _min 、W3 _min 、W4 _min : minimum width of

W5: spacing of

Z: vertical projection direction

Detailed Description

In the drawings, the thickness of layers, films, panels, regions, etc. are exaggerated for clarity. Like numbers refer to like elements throughout. It will be understood that when an element such as a layer, film, region or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connection. Furthermore, "electrically connected" or "coupled" may mean that there are other elements between the elements.

As used herein, "about," "approximately," or "substantially" includes both the values and average values within an acceptable deviation of the particular values as determined by one of ordinary skill in the art, taking into account the particular number of measurements and errors associated with the measurements in question (i.e., limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the values, or within ±30%, ±20%, ±10%, ±5%. Further, as used herein, "about," "approximately," or "substantially" may be used to select a more acceptable range of deviations or standard deviations depending on the optical, etching, or other properties, and may not be used with one standard deviation for all properties.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The schematic drawings are meant to illustrate only some of the embodiments of the present invention. Accordingly, the shape, number, and proportional size of the individual elements shown in the schematic drawings should not be used to limit the invention.

Fig. 1 is a schematic top view of a pixel structure according to a first embodiment of the invention. Referring to fig. 1, a pixel structure 10 of the present embodiment may include a substrate 100 and a pixel electrode 200. The substrate 100 may comprise a hard substrate or a flexible substrate, and the material thereof is, for example, glass, plastic, or other suitable materials, or a combination thereof, but is not limited thereto.

The pixel electrode 200 is disposed on the substrate 100. The pixel electrode 200 may be, for example, a transmissive pixel electrode, a reflective pixel electrode, or a transflective pixel electrode. The transmissive pixel electrode may be a single layer or multiple layers, and the material may include indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, carbon nanotubes/rods, metals or alloys less than 60 angstroms, or other suitable materials. The reflective pixel electrode may be a single layer or multiple layers, and the material may comprise a metal, an alloy, or other suitable materials.

In one embodiment, the pixel electrode 200 includes a first main pattern 210, a second main pattern 220, a plurality of branch patterns 230, and a peripheral pattern 240. It should be noted that, the "pattern" may refer to the protruding portion after the patterning process, and the first main pattern 210, the second main pattern 220, the plurality of branch patterns 230 and the peripheral pattern 240 are respectively protruding portions of the pixel electrode 200, and have slits (slots) between adjacent protruding portions, so that the first main pattern 210, the second main pattern 220, the plurality of branch patterns 230 and the peripheral pattern 240 may also be respectively referred to as a first main electrode, a second main electrode, a branch electrode and a peripheral electrode. In addition, "pattern" may also mean a recessed portion after a patterning process, for example: the first main pattern 210, the second main pattern 220, the plurality of branch patterns 230, and the peripheral pattern 240 are concave portions of the pixel electrode 200, respectively, and electrodes having convex portions may be, for example, provided between adjacent concave portions. In other embodiments, the "pattern" may also include concave portions and convex portions.

The tail end 210a of the first main pattern 210 and the tail end 220a of the second main pattern 220 are connected to a portion of the peripheral pattern 240, and the first main pattern 210 and the second main pattern 220 are staggered (interlaced manner) to distinguish (or define) at least four regions 200a1 to 200a4 of the pixel electrode 200. In an embodiment, the first main pattern 210 and the second main pattern 220 are, for example, stripe patterns, but not limited thereto, and may be other polygons or other suitable shapes. The first main pattern 210 and the second main pattern 220 may have two

tail ends

210a, 220a, respectively, which are farthest from the centroid. In an embodiment, the intersection of the first and second

main patterns

210 and 220 may be the centroid of each other. The first main pattern 210 extends, for example, substantially along a first direction D1, and the second main pattern 220 extends, for example, along a second direction D2 that is not parallel to the first direction D1. In the present embodiment, the first direction D1 and the second direction D2 are substantially perpendicular to each other, but not limited thereto. In one embodiment, the peripheral pattern 240 is a pattern having an outer frame with two first sides 240L (or may be referred to as a first sub-peripheral pattern and a second sub-peripheral pattern from left to right in FIG. 1) and two second sides 240S (or may be referred to as a third sub-peripheral pattern and a fourth sub-peripheral pattern from top to bottom in FIG. 1). In this embodiment, the two first sides 240L of the peripheral pattern 240 are respectively connected with the two tail ends 220a of the second main pattern 220, and the two second sides 240S of the peripheral pattern 240 are respectively connected with the two tail ends 210a of the first main pattern 210. In this embodiment, the width W1 of the two first sides 240L of the peripheral pattern 240 is substantially the same along the direction of the first direction D1 or the direction opposite to the first direction D1 as the first side 240L, and the width W2 of the two second sides 240S of the peripheral pattern 240 is substantially the same along the direction D1 or substantially the same along the second side 240L as the second side 240A of the second main pattern 240, but other embodiments may be other shapes such as the rectangular outer frame 240S, and other embodiments may be other shapes, such that the width W2 of the width of the two sides 240S is substantially the same along the direction of the first side 240S and the direction is substantially the same along the direction of the first side 240D.

The plurality of branch patterns 230 are respectively located in the four regions 200a1 to 200a4 (or may be respectively referred to as a first region 200a1, a second region 200a4, a third region 200a3 and a fourth region 200a4 according to the order of reference numerals). One end of the branch patterns 230 located in each of the regions 200a1 to 200a4 is connected to at least one of the first main pattern 210 and the second main pattern 220. In an embodiment, the plurality of branch patterns 230 may have any extending direction. In the present embodiment, an angle between the extending direction of the plurality of branch patterns 230 and the first direction D1 and/or an angle between the extending direction of the plurality of branch patterns 230 and the second direction D2 is about 45 degrees, but is not limited thereto. In other embodiments, branchesThe angle between the pattern 230 and the first direction D1 and/or the second direction D2 may be between about 0 degrees and 90 degrees, and not 0 degrees or 90 degrees. In one embodiment, the plurality of branch patterns 230 are approximately elongated patterns, but not limited thereto, and may be other polygonal shapes or other suitable shapes. The plurality of branch patterns 230 may have two tail ends 230a_1, 230a_2 furthest from the centroid. In the present embodiment, one tail end 230a_1 of the plurality of branch patterns 230 is connected to the first main pattern 210 or the second main pattern 220. The other tail ends 230a_2 of the plurality of branch patterns 230 and the portion of the peripheral pattern 240 have a plurality of first slits 230S1 having a plurality of widths W3 therebetween. For example, a plurality of first slits 230S1 are provided between the other tail end 230a_2 of the plurality of branch patterns 230 and two first sides 240L (e.g. a first sub-peripheral pattern and a second sub-peripheral pattern) of the peripheral pattern 240, and the plurality of first slits 230S1 have a plurality of widths W3 in the second direction D2, and at least one of the plurality of widths W3 may be a maximum width W3 _max . In one embodiment, the maximum width W3 of each of the plurality of first slits 230S1 _max Adjacent to the intersection of the tail end 220a of the second main pattern 220 and the first side 240L of the peripheral pattern 240, respectively. In addition, in the present embodiment, the width W3 of the plurality of first slits 230S1 is gradually smaller along the direction of the first direction D1 or the direction opposite to the first direction D1 at the intersection of the tail end 220a of the second main pattern 220 and the first edge 240L of the peripheral pattern 240. Therefore, the width W3 of the first slits 230S1 in the second direction D2 is greater than the maximum width W3 _max The minimum width W3 is formed to be gradually smaller along the direction of the first direction D1 or the direction opposite to the first direction D1 _min . Viewed from another aspect, the width W3 of the first slit 230S1 varies, for example, from the trailing end 220a of the second main pattern 220 along a direction substantially parallel to the extending direction of the first main pattern 210 (e.g., the first direction D1 or a direction opposite to the first direction D1).

In an embodiment, a plurality of second slits 230S2 having a width W4 are provided between another tail end 230a_2 of the plurality of branch patterns 230 and a portion of the peripheral pattern 240. For example, a plurality of second slits 230S2 are provided between the other end 230a_2 of the plurality of branch patterns 230 and two second sides 240S (e.g., a third sub-peripheral pattern and a fourth sub-peripheral pattern) of the peripheral pattern 240. In the present embodiment, the widths W4 of the plurality of second slits 230S2 in the first direction D1 are substantially the same, but the present invention is not limited thereto.

In one embodiment, any two adjacent branch patterns 230 are separated. That is, a plurality of third slits 230S3 are provided between any two adjacent plurality of branch patterns 230 of the four regions 200a1 to 200a 4. The plurality of third slits 230S3 extend from the first main pattern 210 or the second main pattern 220 substantially along the extending direction of the adjacent branch patterns 230 and are connected to at least one of the first slits 230S1 and the second slits 230S2 located in the four regions 200a 1-200 a4, but the invention is not limited thereto. The plurality of third slits 230S3 have, for example, substantially the same width in the extending direction, but are not limited thereto. In other embodiments, the plurality of third slits 230S3 may have different widths in the extending direction, for example: gradual increase, gradual decrease, multiple segment width change, or other suitable width design.

The pixel structure 10 of the present invention may optionally further comprise a common electrode 300. The common electrode 300 is disposed on the substrate 100 and is adjacent to at least a portion of the periphery of the pixel electrode 200. For example, the common electrode 300 may be disposed at least on both sides of the pixel electrode 200, for example. In the present embodiment, the common electrode 300 is disposed on three sides of the pixel electrode 200, but not limited thereto. The common electrode 300 and the pixel electrode 200 may have a gap 300G therebetween, for example, such that the common electrode 300 and the pixel electrode 200 are separated from each other. In addition, the common electrode 300 and the pixel electrode 200 may be formed of, for example, the same patterned conductive layer, but are not limited thereto. For example, the patterned conductive layer may include a transparent conductive material, such as: indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, carbon nanotubes/rods, metals or alloys of less than 60 angstroms, or other suitable materials, but are not limited thereto. In one embodiment, a portion of the common electrode 300 may at least partially overlap the data line DL in the vertical projection direction Z and be separated from the data line DL by an insulating layer (not shown) disposed therebetween.

The pixel structure 10 of the present invention may further include an active device T. The active device T is disposed on the substrate 100 and electrically connected to at least one signal line CL. The active device T includes, for example, a gate G, a semiconductor layer SE, a source S and a drain D. The at least one signal line CL includes, for example, at least one scan line SL, at least one data line DL, at least one common electrode line (not shown), at least one power supply line (not shown), or other suitable line, or at least one of the above-mentioned lines. The at least one data line DL is interleaved with the corresponding at least one scan line SL and at least one common electrode line (interlaced manner). For example, at least one of the at least one scan line SL and the at least one common electrode line may extend substantially along the first direction D1, and at least one data line DL may extend substantially along the second direction D2, but is not limited thereto. In other embodiments, at least one of the at least one scan line SL and the at least one common electrode line may extend substantially along the second direction D2, for example, and the at least one data line DL may extend substantially along the first direction D1, for example. The gate G and the source S are electrically connected to the scan line SL and the data line DL, respectively. In an embodiment, the drain D may be partially overlapped with the common electrode line, but the invention is not limited thereto. In an embodiment, the gate G of the active device T, the scan line SL and the common electrode line may be formed by the same first patterned conductive layer, but is not limited thereto. The scan lines SL may be separated from the common electrode lines. The source S, the drain D and the data line DL of the active device T may be formed by the same layer of the second patterned conductive layer, but is not limited thereto.

In the present embodiment, since the plurality of first slits 230S1 or the plurality of second slits 230S2 are disposed between the tail end 230_2 of the plurality of branch patterns 230 and the peripheral pattern 240, the problem of dark marks (disclination line) at the intersections between the peripheral pattern 240 and the first main pattern 210 and the second main pattern 220 and the peripheral electrode 240 can be avoided when the liquid crystal molecules are aligned, or the liquid crystal molecules can be prevented from being excessively tilted in the second direction D2 (and the opposite direction to the second direction D2) at the intersections between the peripheral pattern 240 and the second main pattern 220 and the first direction D1 (and the opposite direction to the first direction D1).

And, since the width W3 of the plurality of first slits 230S1 in the second direction D2 is from the maximum width W3 _max Substantially decreasing along the direction of the first direction D1 or in the direction opposite to the first direction D1, preferably, a minimum width W3 is formed at the intersection of the first side 240L (or the first and second sub-peripheral patterns) and the second side 240S (or the third and fourth sub-peripheral patterns) of the peripheral pattern 240 _min Therefore, the alignment of the liquid crystal molecules at the intersection of the first side 240L and the second side 240S adjacent to the peripheral pattern 240 is less affected by the first slit 230S1, and the liquid crystal molecules still have the original preferred tilt direction (substantially the extending direction of the branched pattern 230) at the location, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. Therefore, the pixel structure of the embodiment can reduce the area of dark fringes and improve the transmittance.

Fig. 2 is a schematic top view of a pixel structure according to a second embodiment of the invention. It should be noted that the embodiment of fig. 2 uses the element numbers and part of the content of the embodiment of fig. 1, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. In addition, fig. 2 omits the illustration of the active device and the signal line to more clearly show the pixel structure of the present embodiment. For the description and effects of the foregoing embodiments, the following embodiments will not be repeated, and at least a part of the descriptions not omitted in the embodiment of fig. 2 will be referred to later.

Referring to fig. 2, in the embodiment shown in fig. 2, the width W1 of the two first sides 240L of the peripheral pattern 240 (or may be referred to as a first peripheral pattern and a second peripheral pattern from left to right in fig. 2) has a minimum width W1 adjacent to the intersection of the tail end 220a of the second main pattern 220 and the first side 240L of the peripheral pattern 240 _min And the width W1 of the peripheral pattern 240 at the intersection of the tail end 220a adjacent to the second main pattern 220 and the first edge 240L of the peripheral pattern 240 is substantially along the first edgeThe direction of one direction D1 or the direction opposite to the first direction D1 is gradually increased to have the maximum width W1 _max . The width W1 may be, for example, about 0.5um to 6um, but is not limited thereto. Viewed from another aspect, the width W1 of the first side 240L of the peripheral pattern 240 varies, for example, from the tail end 220a of the second main pattern 220 along a direction substantially parallel to the extending direction of the first main pattern 210 (e.g., the first direction D1 or a direction opposite to the first direction D1). Furthermore, the first slits 230S1 of the pixel structure 20 of the present embodiment may also have a plurality of widths W3 in the second direction D2, and at least one of the widths W3 is the maximum width W3 _max But is not limited thereto. In the present embodiment, the width W3 of the first slits 230S1 is substantially gradually smaller along the direction of the first direction D1 or the direction opposite to the first direction D1 at the intersection of the tail end 220a of the second main pattern 220 and the first edge 240L of the peripheral pattern 240. Therefore, the width W3 of the first slits 230S1 in the second direction D2 is greater than the maximum width W3 _max The minimum width W3 is formed to be gradually smaller along the direction of the first direction D1 or the direction opposite to the first direction D1 _min . For example, the width W3 of the first slit 230S1 varies, for example, from the tail end 220a of the second main pattern 220 along a direction substantially parallel to the extending direction of the first main pattern 210 (e.g., the first direction D1 or a direction opposite to the first direction D1). In some embodiments, preferably, the minimum width W1 _min And maximum width W3 _max Substantially corresponds to and has a maximum width W1 _max And minimum width W3 _min Essentially, the remaining detailed description and related elements may be found in the foregoing.

In the present embodiment, the widths W2 of the two second sides 240S of the peripheral pattern 240 (or may be referred to as the third peripheral pattern and the fourth peripheral pattern from top to bottom) have the smallest width W2 at the intersection between the tail end 210a adjacent to the first main pattern 210 and the second side 240S of the peripheral pattern 240 _min And the width W2 of the peripheral pattern 240 at the intersection of the tail end 210a adjacent to the first main pattern 210 and the second side 240S of the peripheral pattern 240 is substantially gradually along the direction of the second direction D2 or the direction opposite to the second direction D2Become larger and have a maximum width W2 _max . Viewed from another aspect, the width W2 of the second side 240S of the peripheral pattern 240 varies, for example, from the trailing end 210a of the first main pattern 210 along a direction substantially parallel to the extending direction of the second main pattern 220 (e.g., the second direction D2 or a direction opposite to the second direction D2). Furthermore, the second slits 230S2 of the pixel structure 20 of the present embodiment may also have a plurality of widths W4 in the first direction D1, and at least one of the widths W4 may be the maximum width W4 _max But is not limited thereto. In the present embodiment, the width W4 of the plurality of second slits 230S2 is gradually reduced along the direction of the second direction D2 or the direction opposite to the second direction D2 at the intersection of the tail end 210a of the first main pattern 210 and the second edge 240S of the peripheral pattern 240 to form a minimum width W4 _min . Viewed from another aspect, the width W4 of the plurality of second slits 230S2 varies, for example, from the trailing end 210a of the first main pattern 210 along a direction substantially parallel to the extending direction of the second main pattern 220 (e.g., the second direction D2 or a direction opposite to the second direction D2). In some embodiments, preferably, the minimum width W2 _min And maximum width W4 _max Substantially corresponds to and has a maximum width W2 _max And minimum width W4 _min Essentially, the remaining detailed description and related elements may be found in the foregoing.

In the present embodiment, since the width W4 of the plurality of second slits 230S2 in the first direction D1 is from the maximum width W4 _max Is substantially tapered along the second direction D2 or in a direction opposite to the second direction D2 to form a minimum width W4 at the intersection of the first side 240L and the second side 240S of the peripheral pattern 240 _min Therefore, the liquid crystal molecules at the intersection of the first side 240L and the second side 240S adjacent to the peripheral pattern 240 are less affected by the second slit 230S2 during alignment, i.e., the liquid crystal molecules can have a better tilt direction (substantially the extending direction of the branched pattern 230) therein, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. Therefore, the pixel structure of the embodiment can further reduce the area of dark fringes and improve the transmittance.

Fig. 3 is a schematic top view of a pixel structure according to a third embodiment of the invention. It should be noted that the embodiment of fig. 3 uses the element numbers and part of the content of the embodiment of fig. 1, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. In addition, fig. 3 omits the illustration of the active device and the signal line to more clearly show the pixel structure of the present embodiment. For the description and effects of the foregoing embodiments, the following embodiments will not be repeated, and at least a part of the descriptions not omitted in the embodiment of fig. 3 will be referred to later.

In the present embodiment, the peripheral pattern 240 has at least two first peripheral patterns 242 and at least two second peripheral patterns 244 spaced apart from the first peripheral patterns 242, but is not limited thereto. In other embodiments, the first peripheral pattern 242 and the first peripheral pattern 242 may be partially connected. The first peripheral pattern 242 is, for example, two first sides 240L of the peripheral pattern 240 (or may be referred to as a first sub-peripheral pattern and a second sub-peripheral pattern in a left-to-right manner), and the second peripheral pattern 244 is, for example, two second sides 240S of the peripheral pattern 240 (or may be referred to as a third sub-peripheral pattern and a fourth sub-peripheral pattern in a top-to-bottom manner). The two first peripheral patterns 242 of the peripheral pattern 240 are connected to the two tail ends 220a of the second main pattern 220, respectively, and the two second peripheral patterns 244 of the peripheral pattern 240 are connected to the two tail ends 210a of the first main pattern 210, respectively. In the present embodiment, the widths W1 of the two first peripheral patterns 242 of the peripheral patterns 240 are substantially the same along the direction of the first direction D1 or the direction opposite to the first direction D1 at the intersection of the tail end 220a of the second main pattern 220 and the first peripheral pattern 242 of the peripheral patterns 240, but is not limited thereto. The widths W2 of the two second peripheral patterns 244 of the peripheral pattern 240 are substantially the same in the direction along the second direction D2 or the direction opposite to the second direction D2 at the intersection of the tail end 210a of the first main pattern 210 and the second peripheral pattern 244 of the peripheral pattern 240, but is not limited thereto.

In one embodiment, the first peripheral pattern 242 is connected to another tail end 230a_2 of at least one of the first portions 230p1 of the branch patterns 230 farther from the second main pattern 220 (or closer to the first main pattern 210) and each tail end 220a of the second main pattern 220. The first portion 230p1 of the branch pattern 230 located in one of the regions 200a 1-200 a4 may have more than one branch pattern. "away from" in this section means starting at the intersection and/or connection of the first peripheral pattern 242 and the tail end 220a of the second main pattern 220. In the present embodiment, taking the left side of fig. 3 as an example, the first portion 230p1 of the branch pattern 230 has at least five branch patterns, and the first peripheral pattern 242 is connected to the other end 230a_2 of at least two branch patterns 230p1_1 in the first portion 230p1 of the branch pattern 230 further away from the second main pattern 220 and the end 220a of the second main pattern, but the invention is not limited thereto. Similarly, the relevant elements on the right of fig. 3 are described and so on. In an embodiment, the other branch patterns of the first portion 230p1 of the branch pattern 230, which are not connected to the first peripheral pattern 242, have a plurality of first slits 230S1 respectively with the first peripheral pattern 242. The plurality of first slits 230S1 have substantially the same width W3 in the second direction D2, but the invention is not limited thereto.

In one embodiment, the second peripheral pattern 244 is connected to the other tail end 230a_2 of at least one of the second portions 230p2 of the branch patterns 230 farther from the first main pattern 210 (or closer to the second main pattern 220) and each tail end 210a of the first main pattern 210. "away from" in this section means starting at the intersection and/or connection of the second peripheral pattern 244 with the tail end 210a of the first main pattern 210. For example, the second peripheral pattern 244 may be connected with another tail end 230a_2 of at least one of the second portions 230p2 of the branch pattern 230 to form a closed region therein. The second portion 230p2 of the branch pattern 230 located in one of the regions 200a 1-200 a4 may have more than one branch pattern. In the present embodiment, taking the upper side of fig. 3 as an example, the second portion 230p2 of the branch pattern 230 has two branch patterns, and the second peripheral pattern 244 is connected with one branch pattern 230p2_1 of the second portion 230p2 of the branch pattern 230 further away from the first main pattern 210, and the other tail end 230a_2 and the tail end 210a of the first main pattern 210, but the invention is not limited thereto. Similarly, the relevant elements below in fig. 3 are described and so on. In an embodiment, the other branch patterns of the second portion 230p2 of the branch pattern 230, which are not connected to the second peripheral pattern 244, have a plurality of second slits 230S2 respectively with the second peripheral pattern 244. The plurality of second slits 230S2 have substantially the same width W4 in the first direction D1, but the invention is not limited thereto.

From another perspective, since the tail ends 230a_2 of the branch patterns 230p1_1, 230p2_1 adjacent to the corners of the pixel structure 30 are connected with the first and second

peripheral patterns

242, 244, respectively, at least one of the plurality of third slits 230S3 between the branch patterns 230p1_1, 230p2_1 is connected with the gap 300G between the common electrode 300 and the pixel electrode 200. For example, a single region is used to connect the third slit 230s3_1 of the plurality of third slits 230S3 between the branch patterns 230p1_1 and 230p2_1 adjacent to the corners of the pixel structure 30 with the gap 300G between the common electrode 300 and the pixel electrode 200, and the other of the plurality of third slits 230S3 except the third slit 230s3_1 is connected with the first slit 230S 1.

In the present embodiment, since the third slit 230S3_1 adjacent to the corner of the pixel structure 30 (e.g. the intersection of the tail end of the first peripheral pattern 242 and the tail end of the second peripheral pattern 244) is connected to the gap 300G between the common electrode 300 and the pixel electrode 200, the alignment of the liquid crystal molecules adjacent to the corner of the pixel structure 30 is less affected by the first slit 230S1 or the second slit 230S2, i.e. the liquid crystal molecules can have a better tilt direction (substantially the extending direction of the branch pattern 230) at the corner, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. Thus, the pixel structure 30 of the present embodiment can further reduce the area of dark fringes and improve the transmittance.

Fig. 4 is a schematic top view of a pixel structure according to a fourth embodiment of the invention. It should be noted that the embodiment of fig. 4 uses the element numbers and part of the content of the embodiment of fig. 3, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. For the description and effects of the foregoing embodiments, the following embodiments will not be repeated, and at least a part of the descriptions not omitted in the embodiment of fig. 4 will be referred to later.

Referring to fig. 4, in the embodiment shown in fig. 4, the first slits 230S1 have a plurality of widths W3 in the second direction D2, and at least one of the widths W3 is a maximum width W3 _max . In the present embodiment, the plurality of first slits 230S1 have a plurality of widths W3 in the second direction D2, for example: the length L1 of the branch pattern 230 substantially in the second direction D2 is gradually increased from the intersection of the first main pattern 210 and the second main pattern 220 substantially along the direction of the first direction D1 or the direction opposite to the first direction D1. In one embodiment, the maximum width W3 of each of the plurality of first slits 230S1 _max Adjacent the intersection of the trailing end 220a of the second main pattern 220 and the first peripheral pattern 242 (or the first side 240L as in the previous embodiment) of the peripheral pattern 240, respectively. In addition, in the present embodiment, the width W3 of the plurality of first slits 230S1 gradually decreases along the direction of the first direction D1 or the direction opposite to the first direction D1 at the intersection of the tail end 220a of the second main pattern 220 and the first edge 240L of the peripheral pattern 240. Therefore, the width W3 of the first slits 230S1 in the second direction D2 is greater than the maximum width W3 _max The minimum width W3 is formed to be gradually smaller along the direction of the first direction D1 or the direction opposite to the first direction D1 _min 。

In the present embodiment, except that the third slits 230S3_1 adjacent to the corners of the pixel structure 40 (e.g., the intersections of the ends of the first and second peripheral patterns 242 and 244) are connected to the gap 300G between the common electrode 300 and the pixel electrode 200, the width W3 of the first slits 230S1 in the second direction D2 is greater than the maximum width W3 _max Is substantially tapered along the direction of the first direction D1 or the direction opposite to the first direction D1 to form a minimum width W3 adjacent to the corner of the pixel structure 40 _min Therefore, the liquid crystal molecules at the corners adjacent to the pixel structure 40 are less likely to be affected by the first slit 230S1 or the second slit 2 during alignmentThe 30S2 effect, i.e., the liquid crystal molecules remain there in the original preferred tilt direction (substantially the extending direction of the branch pattern 230), thereby making the alignment of the liquid crystal molecules substantially uniform and consistent. In other words, the pixel structure 40 of the present embodiment can reduce the dark streak area and improve the transmittance.

Fig. 5 and 6 are schematic top views of a pixel structure according to a fifth embodiment of the invention and a pixel structure according to a sixth embodiment of the invention, respectively. It should be noted that the embodiments of fig. 5 and fig. 6 use the element numbers and part of the content of the embodiment of fig. 1, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. In addition, fig. 5 and 6 omit the illustration of the active device and the signal line to more clearly show the pixel structure of the present embodiment. For the description and effects of the omitted parts, reference is made to the foregoing embodiments, and the following embodiments will not be repeated, but at least a part of the descriptions of the embodiments of fig. 5 and 6 are omitted.

Referring to fig. 5 and fig. 6, in the embodiment shown in fig. 5 and fig. 6, the plurality of branch patterns 230 and the peripheral pattern 240 do not have any first slits 230S1 and second slits 230S2 therebetween. And, the peripheral pattern 240 has at least two first peripheral patterns 242 and at least two second peripheral patterns 244 spaced apart from the first peripheral patterns 242. For example, the first peripheral pattern 242 is formed by a second side 242S and two first sides 242L connected to two ends of the second side 242S, i.e., the first peripheral pattern 242 has a shape similar to a "n" or a "ㄩ" shape, for example. In one embodiment, each of the first peripheral patterns 242 is connected to the other ends 230a_2 of the plurality of branch patterns 230 located in at least two of the regions 200a1 to 200a4 to form a notch. For example, the branch pattern 232 closest to the second main pattern 220 is formed by two

elongated patterns

232a, 232b, for example. The extending direction of the elongated pattern 232a is substantially parallel to the extending direction of one of the other branch patterns 230 and has two tail ends 232a_1 and 232a_2, the tail end 232a_1 of the elongated pattern 232a is connected with the second main pattern 220, for example, and the tail end 232a_2 of the elongated pattern 232a is connected with the first peripheral pattern 242, for example. The extending direction of the elongated pattern 232b is substantially parallel to the first direction D1 and has two tail ends 232b_1 and 232b_2, the tail end 232b_1 of the elongated pattern 232b is connected with the elongated pattern 232a, for example, and the tail end 232b_2 of the elongated pattern 232b is connected with the second main pattern 220, for example. The tail end 232b_1 of the elongated pattern 232b may be connected to the centroid of the elongated pattern 232a, but the invention is not limited thereto. Thus, the first peripheral pattern 242 may, for example, form the notch 240O with the branch pattern 232 located closer to the second main pattern 220 in the regions 200a1, 200a3 and the regions 200a2, 200a 4. The notch 240O is, for example, adjacent to a tail end of at least one of the first main pattern 210 and the second main pattern 220. In the present embodiment, the notch 240O is adjacent to the tail end 220a in the second main pattern 220. The second peripheral pattern 244 is, for example, located in the notch 240O and connected to the second main pattern 220. In the present embodiment, the second peripheral pattern 244 is a trapezoid pattern, but the second peripheral pattern 244 is not limited thereto, and may be triangular, rectangular or other geometric shapes that may be disposed in the notch 240O. In the present embodiment, the second peripheral pattern 244 has a space W5 with the branch pattern 232 closest to the second main pattern 220, and the space W5 may be about 0.5um to 3um, but is not limited thereto. The second peripheral pattern 244 has an outer side 244S closer to the common electrode 300, and the first peripheral pattern 242 has a first side 242L (e.g., an outer side of the first peripheral pattern 242 extending substantially along the first direction D1) closer to the common electrode 300. In the embodiment shown in fig. 5, the outer side 244S of each second peripheral pattern 244 is substantially aligned with the first side 242L of each first peripheral pattern 242, but not limited thereto. In the embodiment shown in fig. 6, the outer side 244S of each second peripheral pattern 244 is not aligned with the first side 242L of each first peripheral pattern 242. For example, the second peripheral pattern 244 extends to protrude from the connection with the second main pattern 220 in the second direction D2 or in a direction opposite to the second direction D2.

In the present embodiment, since the first peripheral pattern 242 and the branch pattern 232 closer to the second main pattern 244 form the notch 240O, and the second peripheral pattern 244 is located in the notch 240O and separated from the first peripheral pattern 242 and the branch pattern 232 closer to the second main pattern 244, the liquid crystal molecules can be prevented from excessively toppling in the second direction D2 (and the direction opposite to the second direction) at the intersection of the second peripheral pattern 244 and the second main pattern 220 when aligned, thereby improving the problem of dark streaks (disclination line) at the intersection of the peripheral pattern and the second main pattern 220.

Fig. 7 is a schematic top view of a pixel structure according to a seventh embodiment of the invention. It should be noted that the embodiment of fig. 7 uses the element numbers and part of the content of the embodiment of fig. 1, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. In addition, fig. 7 omits the illustration of the active device and the signal line to more clearly show the pixel structure of the present embodiment. For the description and effects of the foregoing embodiments, the following embodiments will not be repeated, and at least a part of the descriptions not omitted in the embodiment of fig. 7 will be referred to later.

Referring to fig. 7, in the embodiment shown in fig. 7, one tail end 232a_1 of the branch patterns 232 adjacent to the second main pattern 220 (or far from the first main pattern 210) is connected to the second main pattern 220, and a first slit 230S1 is provided between the other tail end 232a_2 of the branch pattern 232 and the peripheral pattern 240. The branched pattern 232 may include at least one elongated pattern (or elongated electrode), but the present invention is not limited thereto, and may be other polygonal shapes or other suitable shapes. On the other hand, one end 230a_1 of the other of the plurality of branch patterns 230 except the branch pattern 232 is connected to the first main pattern 210 or the second main pattern 220, and the other end 230a_2 of the branch pattern 230 is connected to the peripheral pattern 240. Therefore, the other branch patterns 230 except the branch pattern 232 do not have slits (e.g., the first slit 230S1 and the second slit 230S2 of the previous embodiment) with the peripheral pattern 240, but the third slit 230S3 is still present between the two adjacent branch patterns 230.

In the present embodiment, since the first slit 230S1 is disposed between the branch pattern 232 adjacent to the second main pattern 220 and the peripheral pattern 240, excessive tilting of the liquid crystal molecules toward the first direction D1 (and the direction opposite to the first direction D1) at the intersection of the peripheral pattern 240 and the second main pattern 220 can be avoided when the liquid crystal molecules are aligned, thereby improving the problem of dark streaks (disclination line) at the intersection of the peripheral pattern 240 and the second main pattern 220.

Moreover, since there is no slit (e.g., the first slit 230S1 and the second slit 230S 2) between the branch pattern 230 and the peripheral pattern 240 far from the second main pattern 220, the liquid crystal molecules at the intersection of the first side 240L and the second side 240S adjacent to the peripheral pattern 240 still maintain the original preferred tilt direction (substantially the extending direction of the branch pattern 230) during alignment, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. Thus, the pixel structure 70 of the present embodiment can reduce the area of dark fringes and improve the transmittance.

Fig. 8 is a schematic top view of a pixel structure according to a first comparative example. It should be noted that the embodiment of fig. 8 uses the element numbers and part of the content of the embodiment of fig. 1, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted. In fig. 8, the active device and the signal line are omitted.

Referring to fig. 1 and 8, the pixel structure 10' of the first comparative example is substantially the same as the pixel structure 10 of the first embodiment of the present invention, and the main difference between the two is that the width W31 of the first slit 230S1 of the first comparative example in the second direction D2 is substantially the same.

Fig. 9 is a schematic top view of a pixel structure according to a second comparative example. It should be noted that the embodiment of fig. 9 uses the element numbers and part of the content of the embodiment of fig. 8, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted.

Referring to fig. 1, 8 and 9, the pixel structure 20' of the second comparative example is substantially the same as the pixel structure 10 of the first embodiment of the present invention, and the main difference therebetween is that the width W32 of the first slit 230S1 of the second comparative example in the second direction D2 is substantially the same. Also, the width W32 of the first slit 230S1 of the second comparative example in the second direction D2 is larger than the width W3 of the first slit 230S1 of the first embodiment of the present invention in the second direction D2. Further, the width W42 of the second slit 230S2 of the second comparative example in the first direction D1 is substantially the same. Also, the width W42 of the second slit 230S2 of the second comparative example in the first direction D1 is larger than the width W4 of the second slit 230S2 of the first embodiment of the present invention in the first direction D1. In other words, the width W32 of the first slit 230S1 of the second comparative example in the second direction D2 is larger than the width W31 of the first slit 230S1 of the first comparative example in the second direction D2. Further, the width W42 of the second slit 230S2 of the second comparative example in the first direction D1 is larger than the width W4 of the second slit 230S2 of the first comparative example in the first direction D1.

Fig. 10 is a schematic top view of a pixel structure according to a third comparative example. It should be noted that the embodiment of fig. 10 uses the element numbers and part of the content of the embodiment of fig. 7, where the same or similar numbers are used to denote the same or similar elements, and the description of the same technical content is omitted.

Referring to fig. 7 and 10, the pixel structure 30 'of the third comparative example is substantially the same as the pixel structure 70 of the seventh embodiment of the present invention, and the main difference therebetween is that the pixel structure 30' of the third comparative example does not have the first slit 230S1. On the other hand, the pixel structure 30' of the third comparative example does not have the first slit 230S1 and the second slit 230S2, but has only the third slit 230S3 closed.

Fig. 11A is an optical simulation image of the pixel structure according to the first embodiment of the invention of fig. 1 taken under an optical microscope. Fig. 11B is an optical simulation image taken under an optical microscope of the pixel structure according to the first comparative example of fig. 8. Fig. 11C is an optical simulation image taken under an optical microscope of the pixel structure according to the second comparative example of fig. 9.

To facilitate comparison of the pixel structure of the first embodiment of the present invention with the pixel structures of the first and second comparative examples, the design parameters and the liquid crystal efficiency of each pixel structure are summarized in the following table. Wherein the liquid crystal efficiency is a percentage without units.

TABLE 1

Referring to fig. 11A to 11C, in the optical simulation of the pixel structure 10 of the first embodiment of the present invention shown in fig. 11A, it is apparent that the pixel structure 10 of the first embodiment has thinner dark lines in the region R1 and has a significantly bright area in the region R2, compared with the optical simulation of the pixel structures 10', 20' of the first and second comparative examples of fig. 11B and 11C. However, the pixel structures 10', 20' of the first and second comparative examples all exhibit thicker or thicker dark fringes at the region R1, and the region R2 all exhibits less or less bright regions. This is because the width of the first slit 230S1 in the second direction D2 in the pixel structure 10 of the first embodiment gradually decreases from the portion of the maximum width along the direction of the first direction D1 or the direction opposite to the direction of the first direction D1 to form a minimum width W3 at the intersection of the first side 240L and the second side 240S of the peripheral pattern 240 _min Therefore, the liquid crystal molecules are prevented from excessively tilting toward the first direction D1 (and the direction opposite to the first direction D1) at the intersection of the peripheral pattern 240 and the second main pattern 220 when being aligned. In addition, it can be seen from table 1 that the pixel structure 10 of the first embodiment has significantly higher liquid crystal efficiency than the pixel structures 10', 20' of the first and second comparative examples. In addition, the liquid crystal molecules at the intersection (e.g., region R2) between the first edge 240L and the second edge 240S of the peripheral pattern 240 are less affected by the first slit 230S1 during alignment, so that the liquid crystal molecules at the intersection (e.g., region R2) still have the original preferred tilt direction, and thus the alignment of the liquid crystal molecules can be substantially uniform and consistent. Based on this, the pixel structure 10 of the first embodiment of the invention is dark The area of the lines is small and the area of the bright area is large, so that the transmittance can be improved.

Fig. 11D is an optical microscope image of a pixel structure according to the fifth embodiment of the invention shown in fig. 5. Fig. 11E is a view of a pixel structure according to the sixth embodiment of the invention of fig. 6 under an optical microscope. The aforementioned optical microscopy images are all the

pixel structures

50, 60 of each embodiment, which are matched with orthogonal polarizers, and the angle of the orthogonal polarizers is, for example, about 45 degrees and about 135 degrees.

Referring to fig. 11D and 11E, in the optical diagrams of the

pixel structures

50, 60 of the fifth embodiment and the sixth embodiment of the present invention shown in fig. 11D and 11E, it is apparent that the alignment of the liquid crystal molecules at the regions R3, R4 is substantially uniform and consistent, because the first peripheral pattern 242 and the branch pattern 232 closer to the second main pattern 244 form the notch 240O, and the second peripheral pattern 244 is located in the notch 240O and separated from the first peripheral pattern 242 and the branch pattern 232 closer to the second main pattern 244, so that excessive tilting of the liquid crystal molecules at the intersection of the second peripheral pattern 244 and the second main pattern 220 towards the second direction D2 (and the direction opposite to the second direction D2) can be avoided. Based on this, the areas of the dark lines and the areas of the bright areas of the

pixel structures

50 and 60 of the fifth embodiment and the sixth embodiment of the present invention are small, and the transmittance is improved.

Fig. 11F is an optical simulation image of the pixel structure according to the seventh embodiment of the invention shown in fig. 7 taken under an optical microscope. Fig. 11G is an optical simulation image taken under an optical microscope of the pixel structure according to the third comparative example of fig. 10. To facilitate comparison of the performance of the pixel structure 70 of the seventh embodiment of the present invention with the pixel structure 30' of the third comparative example, the design parameters and liquid crystal efficiency of each of the above-described pixel structures are summarized in the following table.

TABLE 2

Referring to fig. 11F and 11G simultaneously, in the optical analog diagram of the pixel structure 70 of the seventh embodiment of the present invention shown in fig. 11F, compared with the optical analog diagram of the pixel structure 30 'of the third comparative example of fig. 11G, the pixel structure 70 of the seventh embodiment has a thinner dark line in the region R5, and in contrast, the pixel structure 30' of the third comparative example has a more obvious dark line in the region R6, because the first slit 230S1 is disposed between the branch pattern 232 adjacent to the second main pattern 220 and the peripheral pattern 240, the liquid crystal molecules are prevented from excessively tilting toward the second direction D2 (and the direction opposite to the second direction D2) at the intersection of the peripheral pattern 240 and the second main pattern 220 when being aligned. In addition, it can be seen from table 2 that the pixel structure 70 of the seventh embodiment has significantly higher liquid crystal efficiency than the pixel structure 30' of the third comparative example. That is, the liquid crystal molecules have a preferred tilt direction thereat, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. Based on the foregoing embodiments and comparative examples, it is preferable that the area of the dark lines of the pixel structure 70 of the seventh embodiment is smaller and the area of the bright region is larger, so that the transmittance is improved.

Furthermore, the active device T of the above embodiment may be a bottom gate transistor (e.g., the gate G is below the semiconductor layer SE), a top gate transistor (e.g., the gate G is above the semiconductor layer SE), a three-dimensional transistor (e.g., the semiconductor layer SE is on a different level), or other suitable type of transistor. The semiconductor layer SE may be a single-layer or multi-layer structure, and its material includes amorphous silicon, nanocrystalline silicon, microcrystalline silicon, polycrystalline silicon, single crystal silicon, carbon nanotubes (rods), oxide semiconductor material, organic semiconductor material, perovskite, or other suitable semiconductor material.

In summary, since the plurality of first slits are disposed between the plurality of branch patterns and the peripheral pattern, the liquid crystal molecules can be prevented from excessively tilting in the first direction (and the opposite direction) at the intersection of the peripheral pattern and the first main pattern when being aligned, thereby improving the problem of dark streaks (disclination line) at the intersection of the peripheral pattern and the first main pattern. In addition, since the width of the plurality of first slits in the second direction gradually decreases from the portion of the maximum width along the direction of the first direction or the direction opposite to the first direction, and the minimum width is formed at the intersection of the first side and the second side of the peripheral pattern, the liquid crystal molecules at the intersection of the first side and the second side of the peripheral pattern can be less affected by the first slits during alignment, i.e., the liquid crystal molecules still maintain the original preferred dumping direction (substantially the extending direction of the branch pattern) at the location, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. In other words, the pixel structure of the invention can reduce the dark fringe area and improve the transmittance. Therefore, the pixel structure of at least one embodiment of the invention has high resolution (e.g., 4K, 6K, 8K).

In addition, in some embodiments of the present invention, the notch is formed between the first peripheral pattern and the branch pattern closer to the second main pattern, and the second peripheral pattern is located in the notch and separated from the first peripheral pattern and the branch pattern closer to the second main pattern, so that the problem of dark streaks (disclination line) at the intersection of the peripheral pattern and the second main pattern can be improved by avoiding excessive tilting of the liquid crystal molecules in the second direction (and the direction opposite to the second direction) at the intersection of the second peripheral pattern and the second main pattern when the liquid crystal molecules are aligned. That is, the liquid crystal molecules have a preferred tilt direction thereat, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. In other words, the pixel structure of the invention can reduce the dark fringe area and improve the transmittance.

Although the present invention has been described with reference to the above embodiments, it should be understood that the invention is not limited thereto, but rather is capable of modification and variation without departing from the spirit and scope of the present invention.

Claims

1. A pixel structure, comprising:

A substrate; and

the pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern, wherein the first main pattern and the second main pattern are staggered to distinguish at least four areas, the branch patterns are respectively positioned in the areas, one end of each branch pattern positioned in each area is connected with at least one of the first main pattern and the second main pattern, any two adjacent branch patterns are separated, a plurality of first slits are formed between the other end of each branch pattern nearest to at least one of the first main pattern and the second main pattern and the peripheral pattern, and the other ends of the other branch patterns are connected with the peripheral pattern.

2. The pixel structure of claim 1, wherein the branch patterns are adjacent to at least two first ends of at least one of the first main pattern and the second main pattern with the first slits therebetween.

3. The pixel structure of claim 1 further comprising a common electrode disposed on the substrate, wherein the common electrode is spaced apart from the pixel electrode and located at least two outer sides of the pixel electrode.