CN109116638B

CN109116638B - Pixel structure

Info

Publication number: CN109116638B
Application number: CN201811031369.3A
Authority: CN
Inventors: 龚晏瑩; 王奕筑; 郑伟成
Original assignee: AU Optronics Corp
Current assignee: AU Optronics Corp
Priority date: 2018-06-25
Filing date: 2018-09-05
Publication date: 2021-12-14
Anticipated expiration: 2038-09-05
Also published as: TW202001381A; CN109116638A; CN113900306A; CN113900306B; TWI668504B

Abstract

The invention discloses a pixel structure which comprises a substrate and a pixel electrode. The pixel electrode is disposed on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The tail end of the first main pattern and the tail end of the second main pattern are connected with part of the peripheral pattern. The first main pattern and the second main pattern are staggered to distinguish at least four areas. The plurality of branch patterns are respectively positioned in at least four areas. One end of each branch pattern in each region is connected with at least one of the first main pattern and the second main pattern. A plurality of first slits having a plurality of widths are formed between the other ends of the plurality of branch patterns and a portion of the peripheral pattern in each region. Any two adjacent branch patterns are separated.

Description

Pixel structure

Technical Field

The present invention relates to a semiconductor structure, and more particularly, to a pixel structure.

Background

With the rapid development of large-sized liquid crystal display panels, the liquid crystal display panels must have wide viewing angle characteristics to meet the requirements of use. In order to achieve higher contrast and wider viewing angle of the lcd panel, the pixel electrodes usually include different alignment directions, so that the liquid crystal molecules in different alignment regions can tilt toward different directions under the applied voltage. However, the electric field at the boundary of different alignment directions causes the liquid crystal molecules to tilt to the extending direction of the boundary of different alignment directions due to the excessive fringe field effect, thereby generating dark fringes and reducing the liquid crystal efficiency when forming a display screen, and further reducing the transmittance and seriously affecting the display quality.

Disclosure of Invention

The present invention provides a pixel structure with high resolution (e.g., 4K, 6K, 8K), which can reduce the dark fringe area and improve the transmittance.

An embodiment of the invention provides a pixel structure. The pixel structure of the embodiment includes a substrate and a pixel electrode. The pixel electrode is arranged on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The tail end of the first main pattern and the tail end of the second main pattern are connected with part of the peripheral pattern. The first main pattern and the second main pattern are staggered to distinguish at least four areas. The plurality of branch patterns are respectively positioned in at least four areas. One end of each branch pattern in each region is connected with at least one of the first main pattern and the second main pattern. A plurality of first slits having a plurality of widths are formed between the other ends of the plurality of branch patterns and a portion of the peripheral pattern in each region. Any two adjacent branch patterns are separated.

Another embodiment of the present invention provides a pixel structure. The pixel structure of the embodiment includes a substrate and a pixel electrode. The pixel electrode is arranged on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The peripheral patterns include at least two first peripheral patterns and at least two second peripheral patterns spaced apart from the first peripheral patterns. The first main pattern and the second main pattern are staggered to distinguish at least four areas. The plurality of branch patterns are respectively positioned in at least four areas. One end of each branch pattern in each region is connected with at least one of the first main pattern and the second main pattern. Any two adjacent branch patterns are separated. Each of the first peripheral patterns is connected to at least one of the other ends of the first portions of the plurality of branch patterns farther from the second main pattern and each of the ends of the first main pattern. And a plurality of first slits are respectively arranged between the peripheral patterns and other branch patterns which are not connected with the first peripheral patterns in the first parts of the plurality of branch patterns. Each of the second peripheral patterns is connected to at least one other end of the second portion of the plurality of branch patterns farther from the first main pattern and each of the ends of the second main pattern.

Yet another embodiment of the present invention provides a pixel structure. The pixel structure of the embodiment includes a substrate and a pixel electrode. The pixel electrode is arranged on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The peripheral patterns include at least two first peripheral patterns and at least two second peripheral patterns spaced apart from the first peripheral patterns. The first main pattern and the second main pattern are staggered to distinguish at least four areas. The plurality of branch patterns are respectively positioned in at least four areas. One end of each branch pattern in each region is connected with at least one of the first main pattern and the second main pattern. Any two adjacent branch patterns are separated to form a gap between each first peripheral pattern and the other end of the branch patterns in two of the at least four regions. Each second peripheral pattern is located in each gap.

Yet another embodiment of the present invention provides a pixel structure. The pixel structure of the embodiment includes a substrate and a pixel electrode. The pixel electrode is arranged on the substrate. The pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern. The first main pattern and the second main pattern are staggered to distinguish at least four areas. The plurality of branch patterns are respectively positioned in at least four areas. One end of each branch pattern in each region is connected with at least one of the first main pattern and the second main pattern. Any two adjacent branch patterns are separated. The plurality of branch patterns are provided with a plurality of first slits between at least two other ends adjacent to at least one of the first main pattern and the second main pattern, and the other ends of the rest branch patterns are connected with the peripheral pattern.

In view of the above, the present invention, since the plurality of first slits are disposed between the plurality of branch patterns and the peripheral pattern, can prevent the liquid crystal molecules from excessively tilting toward the second direction (and the direction opposite to the second direction) at the intersection of the peripheral pattern and the first main pattern (i.e., at the boundary of the first main pattern) when aligning, thereby improving the dark line (misalignment line) problem at the intersection of the peripheral pattern and the first main pattern. In addition, since the widths of the plurality of first slits in the second direction are gradually reduced from the maximum width portion along the direction of the first direction or the direction opposite to the first direction to form the minimum width at the intersection of the first side and the second side of the peripheral pattern, the liquid crystal molecules at the intersection of the first side and the second side adjacent to the peripheral pattern are less affected by the first slits during alignment, and the alignment of the liquid crystal molecules is substantially uniform and consistent. Therefore, the pixel structure of at least one embodiment of the invention has high resolution (e.g., 4K, 6K, 8K).

In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1 is a schematic top view of a pixel structure according to a first embodiment of the invention.

Fig. 2 is a schematic top view of a pixel structure according to a second embodiment of the invention.

Fig. 3 is a schematic top view illustrating a pixel structure according to a third embodiment of the invention.

Fig. 4 is a schematic top view illustrating a pixel structure according to a fourth embodiment of the invention.

Fig. 5 is a schematic top view illustrating a pixel structure according to a fifth embodiment of the invention.

Fig. 6 is a schematic top view illustrating a pixel structure according to a sixth embodiment of the invention.

Fig. 7 is a schematic top view illustrating a pixel structure according to a seventh embodiment of the invention.

Fig. 8 is a schematic top view of a pixel structure according to a first comparative example.

Fig. 9 is a schematic top view of a pixel structure according to a second comparative example.

Fig. 10 is a schematic top view of a pixel structure according to a third comparative example.

Fig. 11A is an optical simulation of the pixel structure of fig. 1 under an optical microscope according to the first embodiment of the invention.

Fig. 11B is an optical simulation of the pixel structure of the first comparative example of fig. 8 taken under an optical microscope.

FIG. 11C is an optical simulation of the pixel structure of the second comparative example of FIG. 9 taken under an optical microscope.

Fig. 11D is an optical simulation of the pixel structure of the fifth embodiment of the invention shown in fig. 5 under an optical microscope.

Fig. 11E is an optical simulation of the pixel structure of the sixth embodiment of the invention shown in fig. 6 under an optical microscope.

Fig. 11F is an optical simulation of the pixel structure of the seventh embodiment of the invention shown in fig. 7 under an optical microscope.

Fig. 11G is an optical simulation of the pixel structure according to the third comparative example of fig. 10 taken under an optical microscope.

Wherein, the reference numbers:

10. 20, 30, 40, 50, 60, 70, 10 ', 20 ', 30 ': pixel structure

100: substrate

200: pixel electrode

200a1, 200a2, 200a3, 200a 4: region(s)

210: first main pattern

210a, 220a, 230a _1, 230a _2, 232a _1, 232a _2, 232b _1, 232b _ 2: tail end of the tube

220: second main pattern

230. 230p1_1, 230p2_1, 232: branch pattern

230p 1: the first part

230p 2: the second part

230S 1: a first slit

230S 2: second slit

230S3, 230S3_ 1: third slit

232a, 232 b: long strip pattern

240: peripheral pattern

240L, 242L: first side

240O: gap

240S, 242S: second side

242: first peripheral pattern

244: second peripheral pattern

244S: outer side edge

300: common electrode

300G: gap

CL: signal line

D: drain electrode

DL: data line

D1: a first direction

D2: second direction

G: grid electrode

L1: length of

R1, R2, R3, R4, R5: region(s)

S: source electrode

And SE: semiconductor layer

SL: scanning line

W1, W2, W3, W4, W31, W32, W42: width of

W1_max、W2_max、W3_max、W4_max: maximum width

W1_min、W2_min、W3_min、W4_min: minimum width

W5: distance between each other

Z: direction of vertical projection

Detailed Description

In the drawings, the thickness of layers, films, panels, regions, etc. have been exaggerated for clarity. Like reference numerals refer to like elements throughout the specification. It will be understood that when an element such as a layer, film, region, or substrate is referred to as being "on" or "connected to" another element, it can be directly on or connected to the other element or intervening elements may also be present. In contrast, when an element is referred to as being "directly on" or "directly connected to" another element, there are no intervening elements present. As used herein, "connected" may refer to physical and/or electrical connections. Further, "electrically connected" or "coupled" may mean that there are additional elements between the elements.

As used herein, "about", "approximately", or "substantially" includes the stated value and the average value within an acceptable range of deviation of the specified value as determined by one of ordinary skill in the art, taking into account the measurement in question and the specified amount of error associated with the measurement (i.e., the limitations of the measurement system). For example, "about" may mean within one or more standard deviations of the stated value, or within ± 30%, ± 20%, ± 10%, ± 5%. Further, as used herein, "about", "approximately" or "substantially" may be selected based on optical properties, etch properties, or other properties, with a more acceptable range of deviation or standard deviation, and not all properties may be applied with one standard deviation.

Unless defined otherwise, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the relevant art and the present invention and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The illustrations presented herein are merely exemplary for the purpose of illustrating some aspects of the invention. Therefore, the shapes, the numbers and the proportional sizes of the respective elements shown in the schematic drawings should not be construed as limiting the present invention.

Fig. 1 is a schematic top view of a pixel structure according to a first embodiment of the invention. Referring to fig. 1, a pixel structure 10 of the present embodiment may include a substrate 100 and a pixel electrode 200. The substrate 100 may include a rigid substrate or a flexible substrate, and the material thereof may be, for example, glass, plastic, or other suitable materials, or a combination thereof, but not limited thereto.

The pixel electrode 200 is disposed on the substrate 100. The pixel electrode 200 can be, for example, a transmissive pixel electrode, a reflective pixel electrode, or a transflective pixel electrode. The transmissive pixel electrode may be a single layer or multiple layers, and the material of the transmissive pixel electrode includes indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, carbon nanotubes/rods, metal or alloy with a thickness of less than 60 angstroms, or other suitable materials. The reflective pixel electrode may be a single layer or multiple layers, and the material thereof includes metal, alloy, or other suitable materials.

In one embodiment, the pixel electrode 200 includes a first main pattern 210, a second main pattern 220, a plurality of branch patterns 230, and a peripheral pattern 240. It should be noted that the "pattern" may refer to a convex portion after the patterning process, and taking the pixel electrode 200 of the present embodiment as an example, the first main pattern 210, the second main pattern 220, the plurality of branch patterns 230 and the peripheral pattern 240 are convex portions of the pixel electrode 200 respectively, and a slit (slit) is formed between adjacent convex portions, so that the first main pattern 210, the second main pattern 220, the plurality of branch patterns 230 and the peripheral pattern 240 may also be referred to as a first main electrode, a second main electrode, a branch electrode and a peripheral electrode respectively. In addition, "pattern" may also mean a recessed portion after patterning process, such as: the first main pattern 210, the second main pattern 220, the plurality of branch patterns 230, and the peripheral pattern 240 are recessed portions of the pixel electrode 200, respectively, and an electrode having a raised portion between adjacent recessed portions may be, for example. In other embodiments, the "pattern" may also include a concave portion and a convex portion.

The end 210a of the first main pattern 210 and the end 220a of the second main pattern 220 are connected to a portion of the peripheral pattern 240, and the first main pattern 210 and the second main pattern 220 are interlaced (interleaved) to separate (or define) at least four regions 200a 1-200 a4 of the pixel electrode 200. In one embodiment, the first main patterns 210 and the second main patterns 220 are, for example, stripe patterns, but are not limited thereto, and may also be other polygons or other suitable shapes. The first and second

main patterns

210 and 220 may have two

tail ends

210a and 220a, respectively, farthest from the centroid. In one embodiment, the intersection of the first and second

main patterns

210 and 220 may be the centroid of each other. The first main pattern 210 extends substantially along the first direction D1, for example, and the second main pattern 220 extends along the second direction D2 that is not parallel to the first direction D1, for example. In the present embodiment, the first direction D1 and the second direction D2 are substantially perpendicular to each other, but not limited thereto. In one embodiment, the peripheral pattern 240 is a pattern having an outer frame, which has two first sides 240L (or may be referred to as a first sub-peripheral pattern and a second sub-peripheral pattern from left to right in fig. 1) and two second sides 240S (or may be referred to as a third sub-peripheral pattern and a fourth sub-peripheral pattern from top to bottom in fig. 1), the two first sides 240L of the peripheral pattern 240 are respectively connected to the two ends 220a of the second main pattern 220, and the two second sides 240S of the peripheral pattern 240 are respectively connected to the two ends 210a of the first main pattern 210, in this embodiment, the width W1 of the two first sides 240L of the peripheral pattern 240 is substantially the same in the direction D1 or the opposite direction D1 at the intersection of the ends 220a of the second main pattern 220 and the first sides 240L of the peripheral pattern 240, and the widths W2 of the two second sides 240S of the peripheral pattern 240 are substantially the same in a direction along the second direction D2 or a direction opposite to the second direction D2 at the intersection of the tail end 210a of the first main pattern 210 and the second side 240S of the peripheral pattern 240. In some embodiments, it is preferable that the width W1 of the two first sides 240L of the peripheral pattern 240 is substantially the same as the width W2 of the two second sides 240S of the peripheral pattern 240, but the disclosure is not limited thereto. The peripheral pattern 240 may be, for example, a substantially rectangular outer frame, but the invention is not limited thereto, and may also be other polygons, or other suitable shapes.

The branch patterns 230 are respectively located in the four regions 200a 1-200 a4 (or may be respectively referred to as a first region 200a1, a second region 200a4, a third region 200a3 and a fourth region 200a4 according to the sequence of the reference numerals). One end of each of the branch patterns 230 located in each of the regions 200a 1-200 a4 is connected to at least one of the first main pattern 210 and the second main pattern 220. In one embodiment, the plurality of branch patterns 230 may have any extending direction. In the present embodiment, the angle between the extending direction of the branch patterns 230 and the first direction D1 and/or the angle between the extending direction of the branch patterns 230 and the second direction D2 is about 45 degrees, but not limited thereto. In other embodiments, the angle between the branch pattern 230 and the first direction D1 and/or the second direction D2 may be about 0 degree to 90 degrees, and is not 0 degree or 90 degrees. In one embodiment, the plurality of branch patterns 230 are substantially strip-shaped patterns, but are not limited thereto, and may be other polygons or other suitable shapes. The plurality of branch patterns 230 may have two tail ends 230a _1, 230a _2 farthest from the centroid. In the present embodiment, one end 230a _1 of the plurality of branch patterns 230 is connected to the first main pattern 210 or the second main pattern 220. A plurality of first slits 230S1 having a plurality of widths W3 are formed between the other end 230a _2 of the plurality of branch patterns 230 and a portion of the peripheral pattern 240.For example, the other end 230a _2 of the branch patterns 230 and the two first sides 240L (e.g., the first sub-peripheral pattern and the second sub-peripheral pattern) of the peripheral pattern 240 have a plurality of first slits 230S1 therebetween, the first slits 230S1 have a plurality of widths W3 in the second direction D2, and at least one of the widths W3 may be the maximum width W3_max. In an embodiment, the maximum width W3 of each of the plurality of first slits 230S1_maxRespectively adjacent to the intersection of the tail end 220a of the second main pattern 220 and the first side 240L of the peripheral pattern 240. In addition, in the present embodiment, the width W3 of the plurality of first slits 230S1 is gradually decreased along the direction D1 or the direction opposite to the first direction D1 at the intersection of the tail end 220a of the second main pattern 220 and the first side 240L of the peripheral pattern 240. Accordingly, the width W3 of the plurality of first slits 230S1 in the second direction D2 is from the maximum width W3_maxA minimum width W3 formed by being tapered in a direction substantially along the first direction D1 or in a direction opposite to the first direction D1_min. Viewed from another aspect, the width W3 of the first slit 230S1 varies, for example, from the trailing end 220a of the second main pattern 220 along a direction substantially parallel to the extending direction of the first main pattern 210 (e.g., the first direction D1 or the direction opposite to the first direction D1).

In one embodiment, the plurality of second slits 230S2 having a width W4 are formed between the other end 230a _2 of the plurality of branch patterns 230 and a portion of the peripheral pattern 240. For example, a plurality of second slits 230S2 are formed between another end 230a _2 of the plurality of branch patterns 230 and two second sides 240S of the peripheral pattern 240 (e.g., the third sub-peripheral pattern and the fourth sub-peripheral pattern). In the embodiment, the widths W4 of the plurality of second slits 230S2 in the first direction D1 are substantially the same, but the invention is not limited thereto.

In one embodiment, any two adjacent branch patterns 230 are separated. That is, a plurality of third slits 230S3 are formed between any two adjacent branch patterns 230 of the four regions 200a 1-200 a 4. For example, the third slits 230S3 extend from the first main pattern 210 or the second main pattern 220 substantially along the extending direction of the adjacent branch pattern 230 and are respectively connected to at least one of the first slits 230S1 and the second slits 230S2 of the four regions 200a 1-200 a4, but the invention is not limited thereto. The plurality of third slits 230S3 have substantially the same width in the extending direction, for example, but not limited thereto. In other embodiments, the plurality of third slits 230S3 may have different widths in the extending direction, such as: progressively larger, progressively smaller, multiple segments of varying width, or other suitable width designs.

The pixel structure 10 of the present invention may optionally further include a common electrode 300. The common electrode 300 is disposed on the substrate 100 and adjacent to at least a portion of the periphery of the pixel electrode 200, for example. For example, the common electrode 300 may be disposed at least on two sides of the pixel electrode 200. In the present embodiment, the common electrode 300 is disposed on three sides of the pixel electrode 200, but not limited thereto. The common electrode 300 and the pixel electrode 200 may have a gap 300G therebetween, for example, such that the common electrode 300 and the pixel electrode 200 are separated from each other. In addition, the common electrode 300 and the pixel electrode 200 may be formed by, for example, the same patterned conductive layer, but are not limited thereto. For example, the patterned conductive layer may include transparent conductive materials, such as: indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium germanium zinc oxide, carbon nanotubes/rods, metals or alloys less than 60 angstroms, or other suitable materials, but are not limited thereto. In one embodiment, a portion of the common electrode 300 may at least partially overlap the data line DL in the vertical projection direction Z and be separated from the data line DL by an insulating layer (not shown) disposed therebetween.

The pixel structure 10 of the present invention may further include an active device T. The active device T is disposed on the substrate 100 and electrically connected to at least one signal line CL. The active device T includes a gate G, a semiconductor layer SE, a source S and a drain D. The at least one signal line CL includes, for example, at least one scan line SL, at least one data line DL, at least one common electrode line (not shown), at least one power supply line (not shown), or other suitable lines, or at least one of the foregoing lines. Each of the at least one data line DL is interlaced with a corresponding at least one scan line SL and at least one common electrode line. For example, but not limited to, at least one of the at least one scan line SL and the at least one common electrode line DL may extend substantially along the first direction D1, and the at least one data line DL may extend substantially along the second direction D2. In other embodiments, at least one of the at least one scan line SL and the at least one common electrode line DL may extend substantially along the second direction D2, for example, and the at least one data line DL may extend substantially along the first direction D1, for example. The gate G and the source S are electrically connected to the scan line SL and the data line DL, respectively. In one embodiment, the drain D may partially overlap with the common electrode line, for example, but the invention is not limited thereto. In an embodiment, the gate G, the scan line SL and the common electrode line of the active device T may be formed by the same first patterned conductive layer, but are not limited thereto. The scan lines SL may be separated from each other by common electrode lines. The source S, the drain D and the data line DL of the active device T may be formed by the same second patterned conductive layer, but are not limited thereto.

In the present embodiment, since the plurality of first slits 230S1 or the plurality of second slits 230S2 are disposed between the one tail end 230_2 of the plurality of branch patterns 230 and the peripheral pattern 240, the liquid crystal molecules can be prevented from excessively tilting toward the second direction D2 (and the direction opposite to the second direction D2) at the intersection of the peripheral pattern 240 and the first main pattern 210 or excessively tilting toward the first direction D1 (and the direction opposite to the first direction D1) at the intersection of the peripheral pattern 240 and the second main pattern 220 when being aligned, thereby improving the problem of dark stripes (misalignment lines) at the intersections between the peripheral pattern 240 and the first main pattern 210 and between the second main pattern 220 and the peripheral electrode 240.

Furthermore, the width W3 of the plurality of first slits 230S1 in the second direction D2 is from the maximum width W3_maxSubstantially along the first direction D1 or opposite to the first direction D1, and preferably, a minimum width W3 is formed at the intersection of the first side 240L (or referred to as the first and second sub-peripheral patterns) and the second side 240S (or referred to as the third and fourth sub-peripheral patterns) of the peripheral pattern 240_minThus in the vicinity of the peripheryThe liquid crystal molecules at the intersection of the first side 240L and the second side 240S of the pattern 240 are less affected by the first slit 230S1 when being aligned, so that the liquid crystal molecules still have the original preferred tilt direction (substantially the extending direction of the branch pattern 230) at the intersection, and the alignment of the liquid crystal molecules is substantially uniform and consistent. Therefore, the pixel structure of the embodiment can reduce the dark fringe area and improve the penetration rate.

Fig. 2 is a schematic top view of a pixel structure according to a second embodiment of the invention. It should be noted that the embodiment of fig. 2 follows the element numbers and partial contents of the embodiment of fig. 1, wherein the same or similar element numbers are used to indicate the same or similar elements, and the description of the same technical contents is omitted. In addition, the active devices and the signal lines are omitted from fig. 2, so as to more clearly show the pixel structure of the present embodiment. For the description of the omitted portions, reference may be made to the description and effects of the foregoing embodiments, and the following embodiments are not repeated, and at least a portion of the description in the embodiment of fig. 2 that is not omitted may refer to the following contents.

Referring to FIG. 2, in the embodiment shown in FIG. 2, the width W1 of the two first sides 240L of the peripheral pattern 240 (or may be referred to as the first peripheral pattern and the second peripheral pattern from left to right in FIG. 2) has a minimum width W1 at an intersection adjacent to the tail end 220a of the second main pattern 220 and the first side 240L of the peripheral pattern 240_minAnd the width W1 of the peripheral pattern 240 at the intersection of the first side 240L of the peripheral pattern 240 and the tail end 220a adjacent to the second main pattern 220 is gradually increased to have a maximum width W1 substantially along the direction of the first direction D1 or the direction opposite to the first direction D1_max. The width W1 may be, for example, about 0.5um to 6um, but is not limited thereto. Viewed from another aspect, the width W1 of the first side 240L of the peripheral pattern 240 varies, for example, from the tail end 220a of the second main pattern 220 along a direction substantially parallel to the extending direction of the first main pattern 210 (e.g., the first direction D1 or the direction opposite to the first direction D1). Furthermore, the plurality of first slits 230S1 of the pixel structure 20 of the embodiment may also have a plurality of widths W3 selectively in the second direction D2, and at least one of the plurality of widths W3 is the maximum widthDegree W3_maxBut is not limited thereto. In the present embodiment, the width W3 of the plurality of first slits 230S1 is gradually decreased along the direction D1 or the direction opposite to the first direction D1 at the intersection of the tail end 220a of the second main pattern 220 and the first side 240L of the peripheral pattern 240. Accordingly, the width W3 of the plurality of first slits 230S1 in the second direction D2 is from the maximum width W3_maxA minimum width W3 formed by being tapered in a direction substantially along the first direction D1 or in a direction opposite to the first direction D1_min. For example, the width W3 of the first slit 230S1 varies from the end 220a of the second main pattern 220 along a direction substantially parallel to the extending direction of the first main pattern 210 (e.g., the first direction D1 or the direction opposite to the first direction D1). In some embodiments, the minimum width W1 is preferably_minAnd a maximum width W3_maxSubstantially corresponds to and has a maximum width W1_maxAnd a minimum width W3_minIn essence, reference is made to the preceding for the remaining detailed description and related elements.

In the present embodiment, the width W2 of the two second sides 240S of the peripheral pattern 240 (or may be referred to as the third peripheral pattern and the fourth peripheral pattern from top to bottom) has a minimum width W2 at the intersection of the second side 240S of the peripheral pattern 240 and the end 210a adjacent to the first main pattern 210_minAnd the width W2 of the peripheral pattern 240 at the intersection of the second side 240S of the peripheral pattern 240 and the neighboring end 210a of the first main pattern 210 becomes gradually larger along the direction of the second direction D2 or the direction opposite to the second direction D2 to have the maximum width W2_max. Viewed from another aspect, the width W2 of the second side 240S of the peripheral pattern 240 varies, for example, from the trailing end 210a of the first main pattern 210 along a direction substantially parallel to the extending direction of the second main pattern 220 (e.g., the second direction D2 or the direction opposite to the second direction D2). Moreover, the plurality of second slits 230S2 of the pixel structure 20 of the embodiment may also have a plurality of widths W4 selectively in the first direction D1, and at least one of the plurality of widths W4 may be a maximum width W4_maxBut is not limited thereto. In the present embodiment, the width W4 of the second slits 230S2 is greater than that of the first main pattern 210Substantially along the direction of the second direction D2 or the direction opposite to the second direction D2, the intersection of the tail end 210a and the second side 240S of the peripheral pattern 240 is gradually reduced to form a minimum width W4_min. Viewed from another aspect, the widths W4 of the plurality of second slits 230S2 vary, for example, from the trailing end 210a of the first main pattern 210 along a direction substantially parallel to the extending direction of the second main pattern 220 (e.g., the second direction D2 or the direction opposite to the second direction D2). In some embodiments, the minimum width W2 is preferably_minAnd a maximum width W4_maxSubstantially corresponds to and has a maximum width W2_maxAnd a minimum width W4_minIn essence, reference is made to the preceding for the remaining detailed description and related elements.

In the present embodiment, the width W4 of the plurality of second slits 230S2 in the first direction D1 is from the maximum width W4_maxIs formed with a minimum width W4 at an intersection of the first side 240L and the second side 240S of the peripheral pattern 240 substantially along a direction of the second direction D2 or a direction opposite to the second direction D2 to be gradually reduced_minTherefore, the liquid crystal molecules at the intersection of the first side 240L and the second side 240S adjacent to the peripheral pattern 240 are less affected by the second slit 230S2 when being aligned, i.e., the liquid crystal molecules can have a better tilting direction (substantially the extending direction of the branch pattern 230) at the intersection, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. Therefore, the pixel structure of the embodiment can further reduce the dark fringe area and improve the penetration rate.

Fig. 3 is a schematic top view illustrating a pixel structure according to a third embodiment of the invention. It should be noted that the embodiment of fig. 3 follows the element numbers and partial contents of the embodiment of fig. 1, wherein the same or similar element numbers are used to indicate the same or similar elements, and the description of the same technical contents is omitted. In addition, the active devices and signal lines are omitted from fig. 3, so as to more clearly show the pixel structure of the present embodiment. For the description of the omitted portions, reference may be made to the description and effects of the foregoing embodiments, and the following embodiments are not repeated, and at least a portion of the description in the embodiment of fig. 3 that is not omitted may refer to the following contents.

In the present embodiment, the peripheral pattern 240 has at least two first peripheral patterns 242 and at least two second peripheral patterns 244 separated from the first peripheral patterns 242, but is not limited thereto. In other embodiments, the first peripheral pattern 242 and the first peripheral pattern 242 may be partially connected. The first peripheral pattern 242 is, for example, two first sides 240L of the peripheral pattern 240 (or may be referred to as a first sub-peripheral pattern and a second sub-peripheral pattern from left to right), and the second peripheral pattern 244 is, for example, two second sides 240S of the peripheral pattern 240 (or may be referred to as a third sub-peripheral pattern and a fourth sub-peripheral pattern from top to bottom). The two first peripheral patterns 242 of the peripheral pattern 240 are connected to the two tail ends 220a of the second main pattern 220, respectively, and the two second peripheral patterns 244 of the peripheral pattern 240 are connected to the two tail ends 210a of the first main pattern 210, respectively. In the present embodiment, the width W1 of the two first peripheral patterns 242 of the peripheral pattern 240 is substantially the same along the first direction D1 or opposite to the first direction D1 at the intersection of the tail end 220a of the second main pattern 220 and the first peripheral pattern 242 of the peripheral pattern 240, but is not limited thereto. The widths W2 of the two second peripheral patterns 244 of the peripheral pattern 240 are substantially the same in the direction along the second direction D2 or the direction opposite to the second direction D2 at the intersection of the tail end 210a of the first main pattern 210 and the second peripheral pattern 244 of the peripheral pattern 240, but are not limited thereto.

In one embodiment, the first peripheral pattern 242 is connected to the other end 230a _2 of at least one of the first portion 230p1 of the branch pattern 230 farther from the second main pattern 220 (or closer to the first main pattern 210) and each end 220a of the second main pattern 220. The first portion 230p1 of the branch pattern 230 in one of the regions 200a 1-200 a4 may have more than one branch pattern. The term "distant" in this paragraph means that the intersection and/or connection between the first peripheral pattern 242 and the tail end 220a of the second main pattern 220 is counted as the starting point. In the present embodiment, taking the left side of fig. 3 as an example, the first portion 230p1 of the branch pattern 230 has at least five branch patterns, and the first peripheral pattern 242 is connected to the other end 230a _2 of the at least two branch patterns 230p1_1 of the first portion 230p1 of the branch pattern 230 farther from the second main pattern 220 and the end 220a of the second main pattern, but the invention is not limited thereto. Similarly, the description of the relevant elements on the right of fig. 3 is repeated and so on. In one embodiment, a plurality of first slits 230S1 are respectively formed between the first peripheral pattern 242 and other branch patterns not connected to the first peripheral pattern 242 in the first portion 230p1 of the branch pattern 230. The plurality of first slits 230S1 have substantially the same width W3 in the second direction D2, but the invention is not limited thereto.

In one embodiment, the second peripheral pattern 244 connects the other end 230a _2 of at least one of the second portions 230p2 of the branch patterns 230 farther from the first host pattern 210 (or closer to the second host pattern 220) and each end 210a of the first host pattern 210. "distant" in this paragraph means that the point at which the second peripheral pattern 244 meets and/or connects with the end 210a of the first main pattern 210 is the starting point. For example, the second peripheral pattern 244 may be connected to the other end 230a _2 of at least one of the second portions 230p2 of the branch pattern 230 to form a closed region therein. The second portion 230p2 of the branch pattern 230 in one of the regions 200a 1-200 a4 may have more than one branch pattern. In the present embodiment, taking the upper side of fig. 3 as an example, the second portion 230p2 of the branch pattern 230 has two branch patterns, and the second peripheral pattern 244 is connected to the other end 230a _2 of one branch pattern 230p2_1 of the second portion 230p2 of the branch pattern 230 farther from the first main pattern 210 and the end 210a of the first main pattern 210, but the invention is not limited thereto. Similarly, the description of the related elements below in fig. 3 is repeated. In one embodiment, a plurality of second slits 230S2 are respectively formed between the second peripheral pattern 244 and other branch patterns not connected with the second peripheral pattern 244 in the second portion 230p2 of the branch pattern 230. The plurality of second slits 230S2 have substantially the same width W4 in the first direction D1, but the invention is not limited thereto.

From another perspective, since the tail ends 230a _2 of the branch patterns 230p1_1, 230p2_1 adjacent to the corners of the pixel structure 30 are connected to the first peripheral pattern 242 and the second peripheral pattern 244, respectively, at least one of the plurality of third slits 230S3 between the branch patterns 230p1_1, 230p2_1 is connected to the gap 300G between the common electrode 300 and the pixel electrode 200. For example, in a single region, the third slit 230S3_1 of the plurality of third slits 230S3 adjacent to the corner of the pixel structure 30 between the branch patterns 230p1_1 and 230p2_1 is connected to the gap 300G between the common electrode 300 and the pixel electrode 200, and the other slits 230S3 except for the third slit 230S3_1 are connected to the first slit 230S 1.

In the embodiment, since the third slit 230S3_1 adjacent to the corner of the pixel structure 30 (e.g., the intersection of the tail of the first peripheral pattern 242 and the tail of the second peripheral pattern 244) is connected to the gap 300G between the common electrode 300 and the pixel electrode 200, the liquid crystal molecules adjacent to the corner of the pixel structure 30 are less affected by the first slit 230S1 or the second slit 230S2 during alignment, i.e., the liquid crystal molecules can have a better tilt direction (substantially the extending direction of the branch pattern 230) therein, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. Therefore, the pixel structure 30 of the present embodiment can further reduce the dark fringe area and improve the transmittance.

Fig. 4 is a schematic top view illustrating a pixel structure according to a fourth embodiment of the invention. It should be noted that the embodiment of fig. 4 follows the element numbers and partial contents of the embodiment of fig. 3, wherein the same or similar element numbers are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted portions, reference may be made to the description and effects of the foregoing embodiments, and the following embodiments are not repeated, and at least a portion of the description in the embodiment of fig. 4 that is not omitted may refer to the following contents.

Referring to fig. 4, in the embodiment shown in fig. 4, the plurality of first slits 230S1 have a plurality of widths W3 in the second direction D2, and at least one of the plurality of widths W3 is the maximum width W3_max. In the present embodiment, the plurality of first slits 230S1 have a plurality of widths W3 in the second direction D2, for example: the branch pattern 230 has a length L1 substantially in the second direction D2 from the firstThe intersection of the main pattern 210 and the second main pattern 220 is substantially gradually enlarged along the direction of the first direction D1 or the direction opposite to the first direction D1. In an embodiment, the maximum width W3 of each of the plurality of first slits 230S1_maxRespectively adjacent to the intersection of the tail end 220a of the second main pattern 220 and the first peripheral pattern 242 (or the first side 240L as described in the previous embodiments) of the peripheral pattern 240. In addition, in the present embodiment, the width W3 of the plurality of first slits 230S1 is gradually decreased along the direction of the first direction D1 or the direction opposite to the first direction D1 at the intersection of the tail end 220a of the second main pattern 220 and the first side 240L of the peripheral pattern 240. Accordingly, the width W3 of the plurality of first slits 230S1 in the second direction D2 is from the maximum width W3_maxA minimum width W3 formed by being tapered in a direction substantially along the first direction D1 or in a direction opposite to the first direction D1_min。

In the present embodiment, in addition to the connection of the third slit 230S3_1 adjacent to the corner of the pixel structure 40 (e.g., the intersection of the tail end of the first peripheral pattern 242 and the tail end of the second peripheral pattern 244) and the gap 300G between the common electrode 300 and the pixel electrode 200, the width W3 of the plurality of first slits 230S1 in the second direction D2 is from the maximum width W3_maxIs substantially tapered along a direction of the first direction D1 or a direction opposite to the first direction D1 to form a minimum width W3 adjacent to a corner of the pixel structure 40_minTherefore, the liquid crystal molecules adjacent to the corners of the pixel structure 40 are less affected by the first slit 230S1 or the second slit 230S2 when being aligned, i.e., the liquid crystal molecules still have the original preferred tilt direction (substantially the extending direction of the branch pattern 230), so that the alignment of the liquid crystal molecules is substantially uniform and consistent. In other words, the pixel structure 40 of the present embodiment can reduce the dark fringe area and improve the transmittance.

Fig. 5 and 6 are schematic top views of a pixel structure according to a fifth embodiment and a pixel structure according to a sixth embodiment of the invention. It should be noted that the embodiment of fig. 5 and 6 follows the element numbers and partial contents of the embodiment of fig. 1, wherein the same or similar elements are denoted by the same or similar reference numbers, and the description of the same technical contents is omitted. In addition, fig. 5 and 6 omit the active devices and signal lines to more clearly show the pixel structure of the present embodiment. For the description of the omitted portions, reference may be made to the description and effects of the foregoing embodiments, and the following embodiments are not repeated, and at least a portion of the description in the embodiments of fig. 5 and 6 that is not omitted may refer to the following contents.

Referring to fig. 5 and 6, in the embodiment shown in fig. 5 and 6, the plurality of branch patterns 230 and the peripheral pattern 240 do not have any first slits 230S1 and second slits 230S2 therebetween. Also, the peripheral pattern 240 has at least two first peripheral patterns 242 and at least two second peripheral patterns 244 spaced apart from the first peripheral patterns 242. For example, the first peripheral pattern 242 is composed of a second side 242S and two first sides 242L connected to two ends of the second side 242S, i.e., the first peripheral pattern 242 has a shape like a "n" or "ㄩ". In one embodiment, each of the first peripheral patterns 242 is connected to the other ends 230a _2 of the branch patterns 230 located in at least two of the regions 200a 1-200 a4 to form a gap. For example, the branch pattern 232 closest to the second main pattern 220 is composed of two

bar patterns

232a and 232 b. The extending direction of the elongated pattern 232a is substantially parallel to the extending direction of one of the other branch patterns 230 and has two ends 232a _1 and 232a _2, the end 232a _1 of the elongated pattern 232a is connected to the second main pattern 220, for example, and the end 232a _2 of the elongated pattern 232a is connected to the first peripheral pattern 242, for example. The elongated pattern 232b extends substantially parallel to the first direction D1 and has two ends 232b _1 and 232b _2, the end 232b _1 of the elongated pattern 232b is connected to the elongated pattern 232a, for example, and the end 232b _2 of the elongated pattern 232b is connected to the second main pattern 220, for example. The tail end 232b _1 of the bar pattern 232b may be connected to the centroid of the bar pattern 232a, for example, but the invention is not limited thereto. Accordingly, the first peripheral pattern 242 may constitute the notch 240O with the branch pattern 232 located closer to the second main pattern 220 in the regions 200a1, 200a3 and the regions 200a2, 200a4, for example. The gap 240O is, for example, adjacent to the tail end of at least one of the first and second

main patterns

210 and 220. In the present embodiment, the gap 240O is adjacent to the tail end 220a of the second main pattern 220. The second peripheral pattern 244 is, for example, located in the gap 240O and connected to the second main pattern 220. In the present embodiment, the second peripheral pattern 244 is a ladder-type pattern, but not limited thereto, and the second peripheral pattern 244 may be a triangle, a rectangle, or other geometric shapes that can be disposed in the gap 240O. In the present embodiment, the second peripheral pattern 244 has a distance W5 with the branch pattern 232 closest to the second main pattern 220, and the distance W5 may be about 0.5um to 3um, but is not limited thereto. The second peripheral pattern 244 has an outer side 244S closer to the common electrode 300, and the first peripheral pattern 242 has a first side 242L closer to the common electrode 300 (e.g., an outer side of the first peripheral pattern 242 extending substantially along the first direction D1). In the embodiment shown in fig. 5, the outer side 244S of each second peripheral pattern 244 is substantially aligned with the first side 242L of each first peripheral pattern 242, but not limited thereto. In the embodiment shown in fig. 6, the outer side 244S of each second peripheral pattern 244 is not aligned with the first side 242L of each first peripheral pattern 242. For example, the second peripheral pattern 244 extends and protrudes from a connection with the second main pattern 220 in the second direction D2 or a direction opposite to the second direction D2.

In the embodiment, since the first peripheral pattern 242 and the branch pattern 232 closer to the second main pattern 244 form the notch 240O, and the second peripheral pattern 244 is located in the notch 240O and separated from the first peripheral pattern 242 and the branch pattern 232 closer to the second main pattern 244, the liquid crystal molecules can be prevented from being excessively inclined toward the second direction D2 (and the direction opposite to the second direction) at the intersection of the second peripheral pattern 244 and the second main pattern 220 when being aligned, so that the problem of dark stripes (misalignment line) at the intersection of the peripheral pattern and the second main pattern 220 can be improved.

Fig. 7 is a schematic top view illustrating a pixel structure according to a seventh embodiment of the invention. It should be noted that the embodiment of fig. 7 follows the element numbers and partial contents of the embodiment of fig. 1, wherein the same or similar element numbers are used to indicate the same or similar elements, and the description of the same technical contents is omitted. In addition, the active devices and the signal lines are omitted from fig. 7, so as to more clearly show the pixel structure of the present embodiment. For the description of the omitted portions, reference may be made to the description and effects of the foregoing embodiments, and the following embodiments are not repeated, and at least a portion of the description in the embodiment of fig. 7 that is not omitted may refer to the following contents.

Referring to fig. 7, in the embodiment shown in fig. 7, one end 232a _1 of the branch pattern 232 adjacent to the second main pattern 220 (or away from the first main pattern 210) among the plurality of branch patterns 230 is connected to the second main pattern 220, and a first slit 230S1 is formed between the other end 232a _2 of the branch pattern 232 and the peripheral pattern 240. The branch pattern 232 may include at least one bar pattern (or bar electrode), but the invention is not limited thereto, and may also be other polygonal shapes, or other suitable shapes. On the other hand, one end 230a _1 of the other of the plurality of branch patterns 230 than the branch pattern 232 is connected to the first main pattern 210 or the second main pattern 220, and the other end 230a _2 of the branch pattern 230 is connected to the peripheral pattern 240. Therefore, the other branch patterns 230 except the branch pattern 232 of the plurality of branch patterns 230 do not have a slit (e.g., the first slit 230S1 and the second slit 230S2 of the previous embodiment) with the peripheral pattern 240, but a third slit 230S3 still exists between two adjacent branch patterns 230.

In the present embodiment, since the first slit 230S1 is disposed between the branch pattern 232 adjacent to the second main pattern 220 and the peripheral pattern 240, the liquid crystal molecules can be prevented from excessively tilting toward the first direction D1 (and the direction opposite to the first direction D1) at the intersection of the peripheral pattern 240 and the second main pattern 220 during alignment, thereby improving the dark line (dark line) problem at the intersection of the peripheral pattern 240 and the second main pattern 220.

Moreover, since there is no slit (e.g., the first slit 230S1 and the second slit 230S2) between the branch pattern 230 and the peripheral pattern 240 away from the second main pattern 220, the liquid crystal molecules at the intersection of the first side 240L and the second side 240S of the peripheral pattern 240 still have a preferred tilting direction (substantially the extending direction of the branch pattern 230) when aligned, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. Thus, the pixel structure 70 of the present embodiment can reduce the dark fringe area and improve the transmittance.

Fig. 8 is a schematic top view of a pixel structure according to a first comparative example. It should be noted that the embodiment of fig. 8 follows the element numbers and partial contents of the embodiment of fig. 1, wherein the same or similar element numbers are used to indicate the same or similar elements, and the description of the same technical contents is omitted. In addition, the active devices and the signal lines are omitted from fig. 8.

Referring to fig. 1 and 8, the first comparative pixel structure 10' is substantially the same as the pixel structure 10 of the first embodiment of the invention, and the main difference between the first comparative pixel structure and the pixel structure is that the width W31 of the first comparative first slit 230S1 in the second direction D2 is substantially the same.

Fig. 9 is a schematic top view of a pixel structure according to a second comparative example. It should be noted that the embodiment of fig. 9 follows the element numbers and partial contents of the embodiment of fig. 8, wherein the same or similar elements are denoted by the same or similar reference numbers, and the description of the same technical contents is omitted.

Referring to fig. 1, 8 and 9, the second comparative pixel structure 20' is substantially the same as the pixel structure 10 of the first embodiment of the invention, and the main difference between the two is that the width W32 of the second comparative first slit 230S1 in the second direction D2 is substantially the same. Also, the width W32 of the second comparative first slit 230S1 in the second direction D2 is greater than the width W3 of the first slit 230S1 of the first embodiment of the present invention in the second direction D2. In addition, the widths W42 of the second comparative second slits 230S2 in the first direction D1 are substantially the same. Also, the width W42 of the second comparative second slit 230S2 in the first direction D1 is greater than the width W4 of the second slit 230S2 of the first embodiment of the present invention in the first direction D1. In other words, the width W32 of the second comparative first slit 230S1 in the second direction D2 is greater than the width W31 of the first comparative first slit 230S1 in the second direction D2. Further, the width W42 of the second comparative second slit 230S2 in the first direction D1 is greater than the width W4 of the first comparative second slit 230S2 in the first direction D1.

Fig. 10 is a schematic top view of a pixel structure according to a third comparative example. It should be noted that the embodiment of fig. 10 follows the element numbers and partial contents of the embodiment of fig. 7, wherein the same or similar elements are denoted by the same or similar reference numbers, and the description of the same technical contents is omitted.

Referring to fig. 7 and 10, the pixel structure 30 'of the third comparative example is substantially the same as the pixel structure 70 of the seventh embodiment of the present invention, and the main difference between the two is that the pixel structure 30' of the third comparative example does not have the first slit 230S 1. Viewed from another aspect, the pixel structure 30' of the third comparative example does not have the first slit 230S1 and the second slit 230S2, but has only the closed third slit 230S 3.

Fig. 11A is an optical simulation of the pixel structure of fig. 1 under an optical microscope according to the first embodiment of the invention. Fig. 11B is an optical simulation of the pixel structure of the first comparative example of fig. 8 taken under an optical microscope. FIG. 11C is an optical simulation of the pixel structure of the second comparative example of FIG. 9 taken under an optical microscope.

In order to compare the pixel structure of the first embodiment of the present invention with the first comparative pixel structure and the second comparative pixel structure, the design parameters and the liquid crystal efficiency of each pixel structure are summarized as follows. Wherein, the liquid crystal efficiency is percentage and has no unit.

[ Table 1]

Referring to fig. 11A to 11C, an image of the first embodiment of the present invention is shown in fig. 11AIn the optical simulation diagram of the pixel structure 10, compared with the optical simulation diagrams of the first and second comparative pixel structures 10 ', 20' of fig. 11B and 11C, it is clear that the region R1 of the pixel structure 10 of the first embodiment has a fine dark fringe and a bright region in the region R2. However, the first and second contrast pixel structures 10 ', 20' both exhibit thicker or thicker dark fringes in the region R1, and exhibit fewer or less bright regions in the region R2. This is because the width of the first slit 230S1 in the second direction D2 in the pixel structure 10 of the first embodiment gradually decreases from the portion of the maximum width along the direction of the first direction D1 or the direction opposite to the first direction D1 to form the minimum width W3 at the intersection of the first side 240L and the second side 240S of the peripheral pattern 240_minTherefore, the liquid crystal molecules are prevented from being excessively tilted toward the first direction D1 (and the direction opposite to the first direction D1) at the intersection of the peripheral pattern 240 and the second main pattern 220 during alignment. In addition, it can be seen from table 1 that the pixel structure 10 of the first embodiment has significantly higher liquid crystal efficiency than the pixel structures 10 ', 20' of the first and second comparative examples. Moreover, the liquid crystal molecules at the intersection of the first side 240L and the second side 240S (e.g., the region R2) adjacent to the peripheral pattern 240 are less affected by the first slit 230S1, so that the liquid crystal molecules still have a better tilt direction at the intersection (e.g., the region R2), and the alignment of the liquid crystal molecules is substantially uniform and consistent. Accordingly, the pixel structure 10 of the first embodiment of the invention has a small dark fringe area and a large bright area, so that the transmittance can be improved.

FIG. 11D is an optical microscope photograph of the pixel structure of the fifth embodiment of the invention shown in FIG. 5. FIG. 11E is a drawing of a pixel structure under an optical microscope according to the sixth embodiment of the invention shown in FIG. 6. The optical microscope drawings refer to the

pixel structures

50 and 60 of the embodiments in combination with orthogonal polarizers, and the angles of the orthogonal polarizers are, for example, about 45 degrees and about 135 degrees.

Referring to fig. 11D and 11E, in the optical diagrams of the

pixel structures

50 and 60 of the fifth and sixth embodiments of the invention illustrated in fig. 11D and 11E, it is obvious that the alignment of the liquid crystal molecules at the regions R3 and R4 is substantially uniform and consistent, because the notch 240O is formed by the first peripheral pattern 242 and the branch pattern 232 closer to the second main pattern 244, and the second peripheral pattern 244 is located in the notch 240O and is separated from the first peripheral pattern 242 and the branch pattern 232 closer to the second main pattern 244, so that the liquid crystal molecules can be prevented from being excessively tilted toward the second direction D2 (and the direction opposite to the second direction D2) at the intersection of the second peripheral pattern 244 and the second main pattern 220 during alignment. Accordingly, the

pixel structures

50 and 60 according to the fifth and sixth embodiments of the present invention have small dark fringe areas and large bright area areas, so that the transmittance can be improved.

Fig. 11F is an optical simulation of the pixel structure of the seventh embodiment of the invention shown in fig. 7 under an optical microscope. Fig. 11G is an optical simulation of the pixel structure according to the third comparative example of fig. 10 taken under an optical microscope. In order to compare the performances of the pixel structure 70 of the seventh embodiment of the present invention and the pixel structure 30' of the third comparative example, the design parameters and liquid crystal efficiency of the respective pixel structures described above are collated in the following table.

[ Table 2]

Referring to fig. 11F and 11G, in the optical simulation diagram of the pixel structure 70 of the seventh embodiment of the present invention shown in fig. 11F, compared with the optical simulation diagram of the pixel structure 30 'of the third comparative example shown in fig. 11G, a region R5 of the pixel structure 70 of the seventh embodiment is clearly seen to have a fine dark fringe, and a region R6 of the pixel structure 30' of the third comparative example is relatively seen to have a dark fringe, because the first slit 230S1 is disposed between the branch pattern 232 and the peripheral pattern 240 adjacent to the second main pattern 220, the liquid crystal molecules are prevented from being excessively inclined toward the second direction D2 (and the direction opposite to the second direction D2) at the intersection of the peripheral pattern 240 and the second main pattern 220 when being aligned. In addition, it can be seen from table 2 that the pixel structure 70 of the seventh embodiment has significantly higher liquid crystal efficiency than the pixel structure 30' of the third comparative example. That is, the liquid crystal molecules have a better tilt direction at the position, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. Based on the foregoing embodiments and comparative examples, it is preferable that the pixel structure 70 of the seventh embodiment of the present invention has a smaller dark fringe area and a larger bright area, so that the transmittance is improved.

Furthermore, the active device T of the foregoing embodiments may be a bottom-gate transistor (e.g., the gate G is below the semiconductor layer SE), a top-gate transistor (e.g., the gate G is above the semiconductor layer SE), a three-dimensional transistor (e.g., the semiconductor layer SE is at a different level), or other suitable type of transistor. The semiconductor layer SE may be a single-layer or multi-layer structure, and its material includes amorphous silicon, nanocrystalline silicon, microcrystalline silicon, polycrystalline silicon, single crystal silicon, carbon nanotubes (rods), an oxide semiconductor material, an organic semiconductor material, perovskite, or other suitable semiconductor material.

In summary, in the present invention, since the plurality of first slits are disposed between the plurality of branch patterns and the peripheral pattern, the liquid crystal molecules can be prevented from excessively tilting toward the first direction (and the direction opposite to the first direction) at the intersection of the peripheral pattern and the first main pattern when being aligned, so as to improve the dark line (shading line) problem at the intersection of the peripheral pattern and the first main pattern. In addition, since the widths of the plurality of first slits in the second direction are gradually reduced from the maximum width portion along the direction of the first direction or the direction opposite to the first direction to form the minimum width at the intersection of the first edge and the second edge of the peripheral pattern, the liquid crystal molecules at the intersection of the first edge and the second edge adjacent to the peripheral pattern can be aligned less affected by the first slits, i.e., the liquid crystal molecules still have the original preferred tilt direction (substantially the extension direction of the branch pattern) at the intersection, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. In other words, the pixel structure of the invention can reduce the dark fringe area and improve the penetration rate. Therefore, the pixel structure of at least one embodiment of the invention has high resolution (e.g., 4K, 6K, 8K).

In addition, in some embodiments of the present invention, the first peripheral pattern and the branch pattern closer to the second main pattern form a notch, and the second peripheral pattern is located in the notch and separated from the first peripheral pattern and the branch pattern closer to the second main pattern, so that the liquid crystal molecules can be prevented from excessively tilting toward the second direction (and the direction opposite to the second direction) at the intersection of the second peripheral pattern and the second main pattern when being aligned, thereby improving the dark line (misalignment line) problem at the intersection of the peripheral pattern and the second main pattern. That is, the liquid crystal molecules have a better tilt direction at the position, so that the alignment of the liquid crystal molecules is substantially uniform and consistent. In other words, the pixel structure of the invention can reduce the dark fringe area and improve the penetration rate.

Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.

Claims

1. A pixel structure, comprising:

a substrate; and

a pixel electrode disposed on the substrate, wherein the pixel electrode includes a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern, the tail end of the first main pattern and the tail end of the second main pattern are connected to a portion of the peripheral pattern, the first main pattern and the second main pattern are interlaced to distinguish at least four regions, the branch patterns are respectively disposed in the regions, one end of each branch pattern disposed in each region is connected to at least one of the first main pattern and the second main pattern, a plurality of first slits having a plurality of widths are disposed between the other end of each branch pattern and a portion of the peripheral pattern, and any two adjacent branch patterns are separated.

2. The pixel structure of claim 1, wherein the widths of the first slits decrease from the second main pattern of each region to a direction away from the second main pattern of each region.

3. The pixel structure of claim 1, wherein the width of the peripheral pattern in each of the regions is substantially the same from the second main pattern in each of the regions toward a direction away from the second main pattern in each of the regions.

4. The pixel structure of claim 1 wherein a plurality of second slits are formed between the other end of the branch patterns in another portion of each of the regions and the peripheral pattern in another portion of each of the regions.

5. The pixel structure of claim 4 wherein the widths of the second slits are substantially the same.

6. The pixel structure of claim 1, wherein the width of the portion of the peripheral pattern in each of the regions increases from the width of the second main pattern in each of the regions to a direction away from the width of the second main pattern in each of the regions.

7. The pixel structure of claim 4, wherein the second slits have widths that decrease from the first main pattern of each region to the first main pattern away from each region.

8. The pixel structure of claim 7, wherein the width of the peripheral pattern at another portion of each of the regions is gradually increased from the first main pattern of each of the regions to a direction away from the first main pattern of each of the regions.

9. A pixel structure, comprising:

a substrate; and

a pixel electrode disposed on the substrate, wherein the pixel electrode comprises a first main pattern, a second main pattern, a plurality of branch patterns and a peripheral pattern, the peripheral pattern comprises at least two first peripheral patterns and at least two second peripheral patterns separated from the first peripheral patterns, the first main pattern and the second main pattern are staggered to separate at least four regions, the branch patterns are respectively disposed in the regions, one end of each branch pattern in each region is connected with at least one of the first main pattern and the second main pattern, any two adjacent branch patterns are separated, wherein each first peripheral pattern is connected with at least one other end of the first portion of the branch patterns far away from the second main pattern and each tail end of the first main pattern, and the other branch patterns not connected with the first peripheral patterns in the first portion of the branch patterns are respectively connected with the peripheral patterns A plurality of first slits having a plurality of widths therebetween, each of the second peripheral patterns being connected to at least one of the other ends of the second portions of the branch patterns farther from the first main pattern and each of the ends of the second main pattern.

10. The pixel structure of claim 9, wherein a width of at least one of the branch patterns at each of the regions changes from one of the first host pattern or the second host pattern to a direction away from one of the first host pattern or the second host pattern.

11. The pixel structure of claim 9, wherein each of the second peripheral patterns is connected to the first ends of the second portions of the branch patterns farther from the first main pattern and to the ends of the first main pattern.

12. The pixel structure of claim 9, wherein each of the first peripheral patterns is connected to the first ends of the first portions of the branch patterns farther from the second main pattern and to the ends of the second main pattern.

13. The pixel structure of claim 9, wherein the peripheral pattern comprises two first sides and two second sides, the second sides are connected to the second portion of the branch pattern of the first main pattern and the tail of the first main pattern to form a first pattern having a closed space, and the second sides are not connected to the first sides and the first peripheral pattern.

14. The pixel structure of claim 13, wherein the first side is connected to the first portion of the branch pattern of the second main pattern and the second main pattern to form two second patterns having a closed space, the first side is not connected to the second portion of the branch pattern of the first main pattern and the end of the first main pattern, and the first pattern is embedded in the space formed by the two second patterns without contact.

15. The pixel structure of claim 1 or 9, further comprising a common electrode disposed on the substrate, wherein the common electrode is spaced apart from the pixel electrode and is located on at least two outer sides of the pixel electrode.