CN113891579A - Manufacturing method of HDI board deep V blind hole - Google Patents

Manufacturing method of HDI board deep V blind hole Download PDF

Info

Publication number
CN113891579A
CN113891579A CN202111107250.1A CN202111107250A CN113891579A CN 113891579 A CN113891579 A CN 113891579A CN 202111107250 A CN202111107250 A CN 202111107250A CN 113891579 A CN113891579 A CN 113891579A
Authority
CN
China
Prior art keywords
layer
blind hole
laser
pad
hole
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202111107250.1A
Other languages
Chinese (zh)
Inventor
陈志新
邹金龙
位珍光
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yixing Silicon Valley Electronic Technology Co Ltd
Original Assignee
Yixing Silicon Valley Electronic Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yixing Silicon Valley Electronic Technology Co Ltd filed Critical Yixing Silicon Valley Electronic Technology Co Ltd
Priority to CN202111107250.1A priority Critical patent/CN113891579A/en
Publication of CN113891579A publication Critical patent/CN113891579A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/429Plated through-holes specially for multilayer circuits, e.g. having connections to inner circuit layers
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/0011Working of insulating substrates or insulating layers
    • H05K3/0017Etching of the substrate by chemical or physical means
    • H05K3/0026Etching of the substrate by chemical or physical means by laser ablation
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/40Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42Plated through-holes or plated via connections
    • H05K3/421Blind plated via connections

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Production Of Multi-Layered Print Wiring Board (AREA)
  • Laser Beam Processing (AREA)

Abstract

The invention discloses a method for manufacturing a deep V blind hole of an HDI (high Density interconnection) plate, which comprises the following steps: cutting-inner layer circuit (including PAD), pressing-brown thin copper-laser drilling-mechanical drilling-hole filling electroplating-resin hole filling, wherein: (1) when the inner layer circuit is used, a blind hole is arranged on the L3 layer to receive PAD, and a blind hole limiting PAD is arranged on the L2 layer; (2) the laser alignment target inner target design is firstly carried out before laser drilling, and specifically comprises the following steps: the design is carried out by adopting an L1-2-3 mode, the L1 layer and the L3 layer are all copper sheets, and a round hole of 0.8mm is etched on the L2 layer; (3) the laser drilling operation comprises the following steps: adopting laser drilling, firstly windowing and ablating 3.5 × 3.5mm step holes on the L1 layer until the step holes penetrate through 0.8mm round hole holes on the L2 layer to ablate to the bearing PAD on the L3 layer, and then automatically grabbing the round hole holes on the L2 layer by a laser drilling machine to carry out alignment laser operation; the manufacturing method is simple and easy to implement, the quality risk of laser leakage can be avoided, and the quality requirement of cross-layer laser L1-3 blind hole telecommunication energy can be met.

Description

Manufacturing method of HDI board deep V blind hole
Technical Field
The invention relates to a manufacturing method of a blind hole, in particular to a manufacturing method of a cross-layer deep V blind hole of a high-density interconnection HDI board, and belongs to the technical field of printed circuit board manufacturing.
Background
Based on printed circuit high density interconnection HDI board, cross deep V blind hole structure, dielectric layer thickness and hole depth, blind hole accept PAD and the key technical field of aperture aspect ratio little. In the prior art, an exaggerated blind hole of L1-3 is disassembled into L1-2 and L2-3 to be subjected to laser, copper filling and electroplating, and a blind hole is stacked to be manufactured, wherein the aperture of the required laser blind hole exceeds the processing capacity of hole filling and electroplating due to the fact that the PP medium of a laser layer is thicker (more than 6-8 mil). The size of a blind PAD bearing layer L3 is only 10 mils, the aperture of a laser blind hole needs to be larger than 6-8 mils, the hole ring is only 2 mils, and the potential large laser blind hole step leakage quality risk exists if the conventional L1-3 blind hole design is adopted.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a manufacturing method of a deep V blind hole of an HDI plate, which is simple and feasible, can avoid the quality risk of laser leakage steps and can meet the telecommunication energy quality requirement of a cross-layer laser L1-3 blind hole.
In order to solve the technical problem, the invention provides a method for manufacturing a deep V blind hole of an HDI board, which specifically comprises the following steps: cutting-inner layer circuit (including PAD), pressing-brown thin copper-laser drilling-mechanical drilling-hole filling electroplating-resin hole filling, wherein:
(1) when the inner layer circuit is used, a blind hole is arranged on the L3 layer to receive PAD, and a blind hole limiting PAD is arranged on the L2 layer;
(2) the laser alignment target inner target design is firstly carried out before laser drilling, and specifically comprises the following steps:
the design is carried out by adopting an L1-2-3 mode, the L1 layer and the L3 layer are both all copper sheets, and a round hole of 0.8mm is etched on the L2 layer;
(3) the specific operation of laser drilling is as follows:
and (3) adopting laser drilling, windowing and ablating 3.5-by-3.5-mm step holes on the L1 layer until the step holes penetrate through the 0.8-mm round hole on the L2 layer to ablate to the bearing PAD on the L3 layer, and then automatically grabbing the round hole on the L2 layer by a laser drilling machine to carry out alignment laser operation.
The technical scheme of the invention is further defined as follows:
furthermore, in the manufacturing method of the deep V blind hole of the HDI board, the diameter of the blind hole on the L3 layer for bearing the PAD is 10mil, the aperture of the blind hole is 6mil, and the ring of the blind hole is less than or equal to 2 mil.
In the manufacturing method of the deep V blind hole of the HDI board, the size of the blind hole limiting PAD on the L2 layer is 14mil, a circular hole with the diameter of 6mil is arranged in the middle of the limiting PAD, and the ring is 4 mil.
The technical effect, design has 6 mil's round hole and 4 mil's ring in the middle of L2 layer blind hole spacing PAD, and at laser's in-process, laser energy does not burn the principle that the copper only ablates the substrate, and when laser drilling appeared harmomegathus off normal, laser energy sees through the accurate landing on L3 layer of the round hole of 6mil in the spacing PAD on the PAD of accepting.
In the manufacturing method of the HDI board deep V blind hole, the browned thin copper adopts an LDD browned process.
The laser drilling process has the advantages that laser energy is relatively small, and damage to inner-layer copper cannot be caused, so that when laser is deflected, laser energy is focused again by using the blind hole limiting PAD of the L2 layer, and the quality problem of missed connection when the blind hole hits the L3 layer is solved.
The invention has the beneficial effects that:
the design of the invention is mainly that the size of the blind hole of the L3 layer for bearing the PAD is insufficient, and direct laser drilling through the L1-3 layer cannot be carried out, so that the limit PAD of the blind hole is designed on the L2 layer. The method aims to solve the problem that blind holes of the L3 th layer are missed (deviated) when the L1-3 layers are radiussed.
Even if the laser drilling tool is used for drilling in a wrong way at the beginning, the laser drilling tool is used for drilling the blind hole bottom PAD of the L3 layer due to the existence of the blind hole limiting PAD of the L2 layer, and therefore the purpose that the blind hole of the L3 layer is not missed is achieved.
According to the manufacturing method of the HDI board deep V blind hole, the quality requirement that the size of the PAD hole ring is less than or equal to 2mil and no missing connection is realized; the invention greatly improves the precision of laser drilling and the reliability of blind hole quality.
Drawings
Fig. 1 is a schematic view of an L1-3 deep V blind via manufactured by an embodiment of the present invention.
FIG. 2 is a schematic cross-sectional view of a deep V-shaped blind hole fabricated in an embodiment of the present invention;
FIG. 3 is a schematic diagram of the layer L3 in FIG. 2 bearing a PAD;
FIG. 4 is a schematic diagram of a limiting PAD layer L2 in FIG. 2;
FIG. 5 is a cross-sectional view of an inner target in an embodiment of the present invention.
FIG. 6 is a schematic view of a normal L1-3 deep V blind via manufactured according to an embodiment of the present invention.
FIG. 7 is a schematic view of another L1-3 deep V blind via manufactured according to an embodiment of the present invention;
FIG. 8 is a schematic diagram of an L1-3 deep V blind via leakage step fabricated by a prior art method.
Detailed Description
Example 1
In the method for manufacturing the HDI board deep V blind hole provided in this embodiment, taking a 10-layer HDI board as an example, an L1-2 common blind hole, an L1-3 deep V blind hole & L10-9 common blind hole, and an L10-8 deep V blind hole are designed (the L10-8 blind hole is manufactured as L1-3), and the thicknesses of the L2 and L9 layers of copper are designed as 2oz thick copper, and the method for manufacturing the blind hole specifically includes the following steps: cutting-inner layer circuit (including PAD), pressing-brown thin copper-laser drilling-mechanical drilling-hole filling electroplating-resin hole filling, wherein:
(1) when the inner layer circuit is used, a blind hole is arranged on the L3 layer to receive PAD, and a blind hole limiting PAD is arranged on the L2 layer;
(2) the laser alignment target inner target design is firstly carried out before laser drilling, as shown in fig. 5, specifically:
the design is carried out by adopting an L1-2-3 mode, the L1 layer and the L3 layer are both all copper sheets, and a round hole of 0.8mm is etched on the L2 layer;
(3) the specific operation of laser drilling is as follows:
laser drilling is adopted, 3.5-3.5 mm stepped holes are firstly windowed and ablated on the L1 layer until the stepped holes penetrate through 0.8mm round hole holes of the L2 layer and are ablated to the bearing PAD of the L3 layer, then a laser drilling machine automatically grabs the round hole holes of the L2 layer to carry out alignment laser operation to form blind holes as shown in the figure 1-2, so that the blind holes are matched with the design height, the precision of laser drilling is greatly improved, and the reliability of the quality of the blind holes is improved.
The laser drilling method comprises the steps of pre-positioning by utilizing a target-seeing pattern during laser drilling, burning out a laser inner target, wherein the inner target is shown in fig. 5, then grabbing a 0.8mm round hole in the inner target for re-positioning, performing laser drilling operation, wherein the position of the grabbed 0.8mm round hole pattern is on the layer L2, laser energy penetrates through the layer L2 blind hole limiting PAD, and the laser drilling is performed on the layer L3 blind hole bottom PAD, so that the aim of preventing the L3 blind holes from being missed is fulfilled.
In this embodiment, other processes such as cutting, inner layer circuit, and pressing are performed according to the prior art.
In the present embodiment, as shown in FIG. 3, the diameter of the blind via PAD on the L3 layer is 10mil, the aperture of the blind via is 6mil, and the ring of the blind via ring is less than or equal to 2 mil.
In this embodiment, as shown in fig. 4, the size of the blind-hole PAD on the L2 layer is 14mil, and a circular hole with a diameter of 6mil is formed in the middle of the PAD, and the ring is 4 mil.
In this example, the thin copper brown is formed using an LDD brown process.
The blind holes manufactured by the manufacturing method of the invention are as follows:
a. normally as shown in fig. 6;
b. with the PAD in place, the L1-2 layer is laser biased, but the L3 layer has no leakage step, as shown in fig. 7.
Blind holes manufactured by the prior art:
without a PAD, the blind via has a leakage step, as shown in fig. 8.
The blind holes are manufactured by the manufacturing method, the limit PAD of the blind hole is designed on the L2 layer, the purpose is to avoid the problem that the blind hole of the L3 th layer is missed (deviated) when the laser of the L1-3 layers is carried out, even under the condition that the laser of the L1-2 layers is deviated, the laser is drilled to the PAD at the bottom of the blind hole of the L3 layer due to the existence of the limit PAD of the blind hole on the L2 layer, so that the purpose that the blind hole of the L3 layer is not missed is achieved, the quality requirement that the blind hole of the blind hole ring with the size of the blind hole carrying the PAD being less than or equal to 2 mils is met, the precision of laser drilling is greatly improved, and the reliability of the quality of the blind hole is improved.
In addition to the above embodiments, the present invention may have other embodiments. All technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the protection scope of the claims of the present invention.

Claims (4)

1. The manufacturing method of the HDI board deep V blind hole is characterized by comprising the following steps: cutting-inner layer circuit (including PAD), pressing-brown thin copper-laser drilling-mechanical drilling-hole filling electroplating-resin hole filling, wherein:
(1) when the inner layer circuit is used, a blind hole is arranged on the L3 layer to receive PAD, and a blind hole limiting PAD is arranged on the L2 layer;
(2) the laser alignment target inner target design is firstly carried out before laser drilling, and specifically comprises the following steps:
the design is carried out by adopting an L1-2-3 mode, the L1 layer and the L3 layer are both all copper sheets, and a round hole of 0.8mm is etched on the L2 layer;
(3) the specific operation of laser drilling is as follows:
and (3) adopting laser drilling, windowing and ablating 3.5-by-3.5-mm step holes on the L1 layer until the step holes penetrate through the 0.8-mm round hole on the L2 layer to ablate to the bearing PAD on the L3 layer, and then automatically grabbing the round hole on the L2 layer by a laser drilling machine to carry out alignment laser operation.
2. The method for manufacturing the HDI board deep V blind hole according to claim 1, wherein the method comprises the following steps: the diameter of a blind hole on the L3 layer for receiving the PAD is 10mil, the aperture of the blind hole is 6mil, and the ring of the blind hole is less than or equal to 2 mil.
3. The method for manufacturing the HDI board deep V blind hole according to claim 1, wherein the method comprises the following steps: the size of the blind hole limiting PAD on the L2 layer is 14mil, a circular hole with the diameter of 6mil is arranged in the middle of the limiting PAD, and the ring is 4 mil.
4. The method for manufacturing the HDI board deep V blind hole according to claim 1, wherein the method comprises the following steps: the browned thin copper adopts an LDD browning process.
CN202111107250.1A 2021-09-22 2021-09-22 Manufacturing method of HDI board deep V blind hole Pending CN113891579A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202111107250.1A CN113891579A (en) 2021-09-22 2021-09-22 Manufacturing method of HDI board deep V blind hole

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202111107250.1A CN113891579A (en) 2021-09-22 2021-09-22 Manufacturing method of HDI board deep V blind hole

Publications (1)

Publication Number Publication Date
CN113891579A true CN113891579A (en) 2022-01-04

Family

ID=79009700

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111107250.1A Pending CN113891579A (en) 2021-09-22 2021-09-22 Manufacturing method of HDI board deep V blind hole

Country Status (1)

Country Link
CN (1) CN113891579A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114945251A (en) * 2022-04-15 2022-08-26 奥士康科技股份有限公司 Method for manufacturing cross-layer blind hole with high thickness-diameter ratio

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101745744A (en) * 2008-12-18 2010-06-23 北大方正集团有限公司 Direct laser pore-forming method
US20180332717A1 (en) * 2015-10-28 2018-11-15 Akm Electronics Technology (Suzhou) Co., Ltd. Method for full filling inter-layer blind hole of hdi rigid-flex laminate with copper
CN110213912A (en) * 2019-06-26 2019-09-06 江门市众阳电路科技有限公司 The radium-shine blind hole alignment method of HDI multi-layer board
CN111615265A (en) * 2020-06-01 2020-09-01 景旺电子科技(龙川)有限公司 Blind hole processing method of LCP multilayer board
CN111757602A (en) * 2020-06-02 2020-10-09 胜宏科技(惠州)股份有限公司 Manufacturing method of blind hole
CN113286434A (en) * 2021-05-14 2021-08-20 宜兴硅谷电子科技有限公司 Alignment method of HDI (high Density interconnection) boards in any interconnection

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101745744A (en) * 2008-12-18 2010-06-23 北大方正集团有限公司 Direct laser pore-forming method
US20180332717A1 (en) * 2015-10-28 2018-11-15 Akm Electronics Technology (Suzhou) Co., Ltd. Method for full filling inter-layer blind hole of hdi rigid-flex laminate with copper
CN110213912A (en) * 2019-06-26 2019-09-06 江门市众阳电路科技有限公司 The radium-shine blind hole alignment method of HDI multi-layer board
CN111615265A (en) * 2020-06-01 2020-09-01 景旺电子科技(龙川)有限公司 Blind hole processing method of LCP multilayer board
CN111757602A (en) * 2020-06-02 2020-10-09 胜宏科技(惠州)股份有限公司 Manufacturing method of blind hole
CN113286434A (en) * 2021-05-14 2021-08-20 宜兴硅谷电子科技有限公司 Alignment method of HDI (high Density interconnection) boards in any interconnection

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114945251A (en) * 2022-04-15 2022-08-26 奥士康科技股份有限公司 Method for manufacturing cross-layer blind hole with high thickness-diameter ratio

Similar Documents

Publication Publication Date Title
CN106973493B (en) The production method and PCB of PCB
CN104244584B (en) Laser drilling alignment method
TWI403242B (en) Production method of multilayer printed wiring board
CN100484372C (en) Printed-wiring board and method of producing the same
CN108696995B (en) Preparation method of stepped circuit board and stepped circuit board
CN113891579A (en) Manufacturing method of HDI board deep V blind hole
CN113286434A (en) Alignment method of HDI (high Density interconnection) boards in any interconnection
KR101726714B1 (en) Boring method for printed substrate
CN108323002B (en) Printed circuit board and method
KR20140146675A (en) Printed Circuit Board
JP5073395B2 (en) Manufacturing method of multilayer printed wiring board
JP2019176068A (en) Printed-circuit board and method for manufacturing printed-circuit board
CN105491818A (en) Manufacturing method for buried circuit board with high alignment precision
CN111465219B (en) Circuit board processing method
CN111263523B (en) FPC pad hole manufacturing method and FPC product
JPH043676B2 (en)
CN112504183B (en) Hole deviation detection method
CN112584609A (en) Step plate and manufacturing process thereof
CN217789988U (en) Deep V-shaped via hole structure
CN221058496U (en) Microwave multilayer board
JP3497789B2 (en) Method for processing through holes in ceramic green sheets
CN114727486B (en) Circuit board preparation method
CN213694285U (en) Step plate
KR100328252B1 (en) A method of fabricating multi printed circuit board using yag laser
CN102833962A (en) Interconnected circuit board and method for manufacturing same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination