CN113885641A - High-low temperature compensation circuit for band gap reference source - Google Patents

High-low temperature compensation circuit for band gap reference source Download PDF

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CN113885641A
CN113885641A CN202111250905.0A CN202111250905A CN113885641A CN 113885641 A CN113885641 A CN 113885641A CN 202111250905 A CN202111250905 A CN 202111250905A CN 113885641 A CN113885641 A CN 113885641A
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circuit
temperature
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low
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CN113885641B (en
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刘晓轩
李海松
曹天骄
李婷
杨靓
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Xian Microelectronics Technology Institute
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Xian Microelectronics Technology Institute
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    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
    • G05F1/10—Regulating voltage or current
    • G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
    • G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
    • G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
    • G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation

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Abstract

The invention discloses a high and low temperature compensation circuit for a band gap reference source.A positive electrode of a high temperature current comparator is connected with a first output end of a PTAT current mirror circuit, a negative electrode of the high temperature current comparator is connected with a first output end of a CTAT current mirror circuit, and an output end of the high temperature current comparator is connected with a PTAT compensation current source through a high temperature compensation branch switch; the positive electrode of the low-temperature current comparator is connected with the first output end of the PTAT current mirror circuit, the negative electrode of the low-temperature current comparator is connected with the second output end of the CTAT current mirror circuit, and the output end of the low-temperature current comparator is connected with the CTAT compensation current source through the low-temperature compensation branch switch; the first input end of the current summing circuit is connected with the high-temperature compensation branch switch, the second input end of the current summing circuit is connected with the low-temperature compensation branch switch, and the second output end of the PTAT current mirror circuit and the third output end of the CTAT current mirror circuit are both connected with the third input end of the current summing circuit.

Description

High-low temperature compensation circuit for band gap reference source
Technical Field
The invention belongs to the field of band gap reference sources, and particularly relates to a high-low temperature compensation circuit for a band gap reference source.
Background
In high precision large gaugeIn a modular integrated circuit, a reference module is usually used as an important reference module for establishing an internal power supply, and the precision of reference output is closely related to the precision of the whole system. The band-gap reference is the most widely used and most widely marketed reference type at present, and due to the advantages of simple structure, excellent performance, convenience for integration and the like, the shadow of the band-gap reference can be seen almost in every large-scale integrated circuit, usually in a high-performance analog-to-digital conversion circuit, the required accuracy of the internal power supply voltage is lower than +/-0.5%, but the traditional first-order band-gap reference source cannot reach the required accuracy formula [1 ] in a working temperature range due to the influence of a high-order temperature item]Showing an off-center temperature T0The farther away, the larger the error, so it is necessary to eliminate the influence of the temperature-related high-order term on the output voltage by providing a compensation circuit, which is the basic principle of the compensation circuit.
Formula [1]VBE＝Vg0+α1(T-T0)+α2(T-T0)2+α3(T-T0)3+L+αn(T-T0)n
Fig. 1 is a circuit structure diagram of a conventional bandgap reference source, which is composed of a PTAT generation branch, an operational amplifier circuit, a mirror circuit, and a reference generation branch, and the basic structure uses a current-voltage mode superposition method to generate a reference voltage, but inevitably introduces operational amplifier imbalance, current mirror mismatch and other error factors, and the reference precision is seriously affected by the process. Fig. 2 is a band gap reference compensation structure diagram adopting a segmented compensation structure, in a full working temperature interval, the start voltage of a triode BE junction is reduced by-2 mV/DEG C along with the temperature, the change amount of the reference voltage compared with the reference voltage can BE ignored, and by arranging two compensation branches N2 and N3, more current is drawn from a reference core after the reference circuit enters high temperature, so that the compensation purpose is achieved. However, the compensation method in fig. 2 has the limitation that low temperature cannot be compensated, and the compensation temperature point is seriously influenced by the process, which easily causes excessive or insufficient compensation.
Disclosure of Invention
The invention aims to overcome the defect of low precision of the traditional reference and provides a high-low temperature compensation circuit for a band-gap reference source.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
a high and low temperature compensation circuit for a band gap reference source comprises a high temperature current comparator, a low temperature current comparator, a PTAT current mirror circuit, a CTAT compensation current source, a PTAT compensation current source and a current summation circuit;
the positive pole of the high-temperature current comparator is connected with the first output end of the PTAT current mirror circuit, the negative pole of the high-temperature current comparator is connected with the first output end of the CTAT current mirror circuit, and the output end of the high-temperature current comparator is connected with the PTAT compensation current source through the high-temperature compensation branch switch;
the positive pole of the low-temperature current comparator is connected with the first output end of the PTAT current mirror circuit, the negative pole of the low-temperature current comparator is connected with the second output end of the CTAT current mirror circuit, and the output end of the low-temperature current comparator is connected with the CTAT compensation current source through the low-temperature compensation branch switch;
the first input end of the current summing circuit is connected with the high-temperature compensation branch switch, the second input end of the current summing circuit is connected with the low-temperature compensation branch switch, and the second output end of the PTAT current mirror circuit and the third output end of the CTAT current mirror circuit are both connected with the third input end of the current summing circuit.
Preferably, the high-temperature current comparator includes a first circuit unit and a second circuit unit;
the first circuit unit comprises a PMOS with a first two-stage diode short circuit and a PMOS with a first cascode connection method which are connected with each other, and the drain end of the PMOS with the first two-stage diode short circuit is connected with the first output end of the PTAT current mirror circuit;
the second circuit unit comprises an NMOS (N-channel metal oxide semiconductor) with a short-circuited second two-stage diode and an NMOS with a second cascode connection method which are mutually connected, and the drain end of the NMOS with the short-circuited second two-stage diode is connected with the first output end of the CTAT current mirror circuit;
and the output end of the NMOS of the first cascode connection method and the output end of the NMOS of the second cascode connection method are connected and are used as the output end of the high-temperature current comparator together.
Preferably, the low-temperature current comparator includes a third circuit unit and a fourth circuit unit;
the third circuit unit comprises a PMOS with a short-circuited third two-stage diode and a PMOS with a third cascode connection method which are mutually connected, and the drain end of the PMOS with the short-circuited third two-stage diode is connected with the first output end of the PTAT current mirror circuit;
the fourth circuit unit comprises an NMOS (N-channel metal oxide semiconductor) short-circuited by a fourth two-stage diode and an NMOS (N-channel metal oxide semiconductor) in a fourth cascode method which are mutually connected, and the drain end of the NMOS short-circuited by the fourth two-stage diode is connected with the second output end of the CTAT current mirror circuit;
and the output end of the PMOS in the third cascode connection mode and the output end of the NMOS in the fourth cascode connection mode are connected and are used as the output end of the low-temperature current comparator together.
Preferably, the PTAT current mirror circuit is provided with two sets of cascode mirror circuits and a set of diode-connected cascode mirror source circuit.
Preferably, the CTAT current mirror circuit is provided with three sets of cascode mirror circuits and a set of diode-connected cascode mirror source circuit.
Preferably, the high-temperature compensation branch switch is a large-size PMOS transistor, a source end of the large-size PMOS transistor is connected with the PTAT compensation current source, a gate end of the large-size PMOS transistor is connected with an output end of the high-temperature current comparator, and a drain end of the large-size PMOS transistor is connected with a first input end of the current summing circuit.
Preferably, the low-temperature compensation branch switch adopts a large-size PMOS transistor, the source end of the large-size PMOS transistor is connected with the CTAT compensation current source, the gate end of the large-size PMOS transistor is connected with the output end of the low-temperature current comparator, and the drain end of the large-size PMOS transistor is connected with the second input end of the current summing circuit.
Preferably, the current summing circuit comprises a first cascode current mirror, a second cascode current mirror and a first-order band-gap reference current source, an input end of the first cascode current mirror is connected with the high-temperature compensation branch switch, an input end of the second cascode current mirror is connected with the low-temperature compensation branch switch, a second output end of the PTAT current mirror circuit and a third output end of the CTAT current mirror circuit are both connected with an input end of the first-order band-gap reference current source, and an output end of the first cascode current mirror, an output end of the second cascode current mirror and an output end of the first-order band-gap reference current source are connected and serve as an output end of the whole current summing circuit.
Compared with the prior art, the invention has the following beneficial effects:
the high-temperature and low-temperature compensation circuit for the band-gap reference source adopts the high-temperature and low-temperature current comparator, can compare currents with different temperature coefficients, and generates control signals for controlling corresponding branches to compensate an output node. In a low-temperature region, the PTAT current is smaller than the CTAT current, the enabling of an output node is high due to the fact that the pull-up current and the pull-down current of the high-temperature current comparator and the pull-down current of the low-temperature current comparator are not matched, the CTAT current branch is gated to perform curvature compensation on the output node, so that a first-order band-gap reference in the current summing circuit is compensated in the low-temperature region, the temperature and the compensation quantity are in inverse proportion, and a band-gap reference low-temperature drift coefficient can be extremely large by adopting a proper current proportion; in a high-temperature area, the process is similar, the PTAT current is larger than the CTAT current, the PTAT current branch is gated to compensate the output node, and different from the low-temperature area, the high-temperature area uses the first-order positive temperature coefficient current for compensation, so that the situation that in the traditional process, the high temperature deviates from the central reference temperature value farther, and the first-order positive temperature coefficient current is introduced on the basis of the original first-order compensation band gap reference current, so that the influence of high-temperature errors on the reference current is reduced; the high-low temperature compensation circuit of the invention adopts a current mode to compensate the reference current, so that the low-voltage high-precision reference can be realized.
Drawings
FIG. 1 is a block diagram of a conventional first-order bandgap reference circuit;
FIG. 2 is a diagram of a conventional bandgap reference compensation scheme using a segmented compensation structure;
FIG. 3 is a schematic diagram of the high and low temperature compensation circuit for bandgap reference according to the present invention;
FIG. 4 is a circuit diagram of the high and low temperature current comparator of the present invention;
FIG. 5 is a schematic diagram of the operation of the current comparator in the present invention;
FIG. 6 is a schematic diagram of the system compensation of the present invention;
fig. 7 is a block diagram of a current summing circuit according to the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
the high-low temperature compensation circuit disclosed by the invention belongs to the field of reference current sources, has the advantages of large compensation interval, high realization precision and excellent applicability, and can be matched with most current mode reference sources. The invention provides a compensation scheme using a current comparison structure, which compensates a first-order band-gap reference current in a high-temperature range and a low-temperature range, greatly reduces the temperature drift coefficient of the reference current, has a flexible structure, and is suitable for band-gap reference current sources in most high-precision power supplies.
Referring to fig. 3-7, the high and low temperature compensation circuit for the bandgap reference source of the present invention is characterized by comprising a high temperature current comparator, a low temperature current comparator, a PTAT current mirror circuit, a CTAT current mirror circuit, a compensation branch switch, a CTAT compensation current source, a PTAT compensation current source, and a current summation circuit; the high-temperature current comparator and the low-temperature current comparator are respectively used for comparing a high-temperature region K and a low-temperature region K1ICTATCurrent, K2ICTATAnd MIPTATOutputting a high level and a low level according to the comparison result, generating HEN and LEN signals after the control signal passes through two NOT buffers, directly outputting the signals to respective corresponding compensation branch switches, controlling the compensation branches to be opened, and compensating the output node by a PTAT compensation current source and a CTAT compensation current source; as shown in fig. 3, wherein the magnification factor K is1、K2M is obtained by mirroring PTAT current and CTAT current through three sets of cascode current mirrors, and the mirrored current is used for being input into a current comparator ICOMP1 (i.e. the high temperature current comparator) and a comparator ICOMP2 (i.e. the low temperature current comparator); m, K1、K2Numerical value is composed ofThe compensation temperature points TL, TH. On the premise of ensuring the optimal precision, TL and TH are set to be one fourth and three quarters of a full-temperature interval (the highest service temperature is reduced by the lowest service temperature), and K is finely adjusted according to an actual circuit1、K2(see fig. 6, adjustment to change the number of cascode current mirrors to this value) meets the requirement for an optimized temperature coefficient. The HEN and LEN signals are high and low level signals output after being compared by the two current comparators and are used for controlling the compensation branch switch;
MI at the input end of the high-temperature current comparator when the output signal HEN of the high-temperature current comparator ICOMP1 is highPTATLess than K1ICTATThe comparator outputs high level, in this stage, the controlled compensation branch switch is not started, and the PTAT current source does not compensate the output node; as the temperature continues to rise, the high temperature current comparator input MIPTATGreater than K1ICTATThe high temperature current comparator outputs a low level, and in this stage, the controlled compensation branch switch S1 is turned on, and the PTAT compensation current source compensates the output node.
When the output signal LEN of the low-temperature current comparator ICOMP2 is high, the input end MI of the low-temperature current comparatorPTATGreater than K2ICTATThe low-temperature current comparator outputs high level, in the stage, the controlled compensation branch switch S2 is not switched on, and the CTAT current source does not compensate the output node; low temperature current comparator input MI as temperature continues to decreasePTATLess than K2ICTATThe comparator outputs low level, and in this stage, the controlled compensation branch switch is turned on, and the CTAT compensation current source compensates the output node.
Wherein the PTAT current mirror circuit comprises two groups of cascode mirror circuits; a first group of cascode mirror circuits, a PTAT current source mirrored to the input terminal of the high-low temperature current comparator via a diode-connected cascode circuit to generate MIPTATCurrent flow; a second set of cascode mirror circuits, a PTAT current source mirrored to a PTAT compensation current source via a diode-connected cascode circuit to generate ITHThe current is compensated.
The CTAT current mirror circuit comprises three groups of cascode mirror circuits; a first group of cascode mirror image circuits, wherein a CTAT current source is mirrored to the input end of the high-temperature current comparator through the diode-connected cascode circuit to generate K1ICTATCurrent flow; a second group of cascode mirror circuits, wherein a CTAT current source is mirrored to the input end of the low-temperature current comparator through the diode-connected cascode circuit to generate K2ICTATCurrent flow; a third group of cascode mirror image circuits, wherein the CTAT current source is mirrored to the CTAT compensation current source through the diode-connected cascode circuit to generate ITLThe current is compensated.
The compensation branch switch is composed of large-size PMOS transistors (PMOS transistors with the width-length ratio being more than or equal to 5) S1 and S2 and voltage-stabilizing capacitors C1 and C2, wherein S1 controls a PTAT compensation current source, and S2 controls a CTAT compensation current source; the source ends of S1 and S2 are connected with a current source, the grid end is connected with the output of a current comparator, and the drain end is directly connected with an output compensation node; the C1 and C2 are used for filtering high-frequency noise in the HEN and LEN signals and preventing the noise from being coupled to the output compensation node through the grid end.
The current summing circuit is composed of a 05 circuit, a 06 circuit and a first-order band-gap reference current source. 05 cascode current mirror in circuit provides high temperature compensation current ITHA first input terminal of a current summation circuit; 06 cascode current mirror in circuit provides low temperature compensation current ITLA second input terminal of the current summing circuit; the first-order band-gap reference current source provides a first-order uncompensated reference current which is the third input end of the current summing circuit. The three are interconnected through a wire to form an output node of the whole invention.
All the proportionality coefficients in the system are realized by high-precision current mirrors, and the cascode circuit is adopted to accurately mirror the current, so that the process error between the design and the actual current chip is reduced.
Referring to fig. 3, the positive and negative ends of the two current comparators are respectively connected to currents with opposite temperature coefficients, the high-temperature and low-temperature current comparators output signals of HEN and LEN which are opposite to each other, and when HEN is 0 and LEN is 1, the high-temperature compensation current compensates the output node; when HEN is 1 and LEN is 0, the low temperature compensation current compensates the output node. An uncompensated interval is newly added by adopting a plurality of groups of comparison curves, and HEN is equal to LEN is equal to 1 in the interval.
Referring to fig. 4, the current comparators ICOMP1, ICOMP2 of the present invention are circuit diagrams; CTAT and PTAT currents with different temperature coefficients are input into the current comparator, and a 01 circuit is a PMOS with two-stage diodes in short circuit; the 02 circuit is a PMOS with a cascode connection method, and the proportion of two PMOS tubes close to a power supply determines the current pull-up size; the 03 circuit is similar to the 02 circuit and the 01 circuit, and the proportion of two NMOS tubes close to logic ground determines the magnitude of current pull-down. The structure utilizes the mismatch of current up-and-down-pulling to make the output nodes HEN and LEN fall to the logic ground voltage and rise to the power voltage under different input comparison results.
Referring to fig. 5, fig. 5 is a schematic diagram of the operation of the current comparator of the present invention; the functional module utilizes the serial connection of multistage cascode current mirrors, and switches the compensation circuit on two sides of a temperature point Tr to achieve the compensation effect by setting a positive temperature coefficient current intersection point Tr and a negative temperature coefficient current intersection point Tr as a compensation temperature point.
Referring to fig. 6, fig. 6 is a schematic diagram of the system compensation of the present invention; two I with different amplitudes are mirrored by means of a cascode current mirror circuitCTATCurrent K1ICTAT、K2ICTATRespectively comparing the above I with current comparatorCTATCurrent is equal to MIPTATAnd forming control signals HEN and LEN to start corresponding compensation branches, and explaining the compensation method and the compensation interval of the invention and the temperature characteristic difference of the compensation current in the high-low temperature interval of the invention by describing the compensation current in the 04 circuit.
Referring to fig. 7, fig. 7 is a block diagram of a current summing circuit of the present invention; the compensation current source adopts a cascode current mirror using external bias, so that the channel length effect is greatly reduced, the mirror image precision is ensured, and the swing amplitude boundary of an output node is improved. Fig. 7 also illustrates that the final output current is composed of three parts, respectively: first-order band-gap reference current source and high-temperature compensation current ITHLow temperature compensation current ITL. The PMOS tube connected with the HEN in the 05 circuit is a switch S1, when the HEN is in a deep linear region from high jump to low jump S1, the upper current source is the output nodePoint output high temperature compensation current ITHThe current exhibits a first order positive temperature characteristic; the PMOS tube connected with the LEN in the 06 circuit is a switch S2, when the LEN is in a deep linear region from high jump to low jump S2, the upper current source outputs low temperature compensation current I to the output nodeTLThe current exhibits a high order negative temperature characteristic. The capacitors C1 and C2 are used as noise filtering and voltage stabilizing capacitors to filter high-frequency noise in the switch control signals, enable the falling edge to be slowly changed and prevent current overshoot caused by rapid switching action.
In summary, the invention is improved on the basis of the existing traditional band gap reference source, and the proposed high-low temperature compensation circuit adopting the current comparison structure compensates the band gap reference source in both low-temperature and high-temperature regions, thereby reducing the influence of the high-order temperature coefficient of the band gap reference on the reference current value and reducing the temperature drift coefficient of the band gap reference source. According to the invention, the compensation current is controlled to compensate the reference current in different temperature intervals by virtue of different temperature characteristics of CTAT and PTAT, so that the high-low temperature characteristics of the reference source are optimized, and the output accuracy of the band-gap reference source in the full temperature range is greatly improved. The invention is particularly suitable for high-precision integrated circuits sensitive to temperature.

Claims (8)

1. A high and low temperature compensation circuit for a band-gap reference source is characterized by comprising a high temperature current comparator, a low temperature current comparator, a PTAT current mirror circuit, a CTAT compensation current source, a PTAT compensation current source and a current summation circuit;
the positive pole of the high-temperature current comparator is connected with the first output end of the PTAT current mirror circuit, the negative pole of the high-temperature current comparator is connected with the first output end of the CTAT current mirror circuit, and the output end of the high-temperature current comparator is connected with the PTAT compensation current source through the high-temperature compensation branch switch;
the positive pole of the low-temperature current comparator is connected with the first output end of the PTAT current mirror circuit, the negative pole of the low-temperature current comparator is connected with the second output end of the CTAT current mirror circuit, and the output end of the low-temperature current comparator is connected with the CTAT compensation current source through the low-temperature compensation branch switch;
the first input end of the current summing circuit is connected with the high-temperature compensation branch switch, the second input end of the current summing circuit is connected with the low-temperature compensation branch switch, and the second output end of the PTAT current mirror circuit and the third output end of the CTAT current mirror circuit are both connected with the third input end of the current summing circuit.
2. The high-low temperature compensation circuit for the bandgap reference source according to claim 1, wherein the high-temperature current comparator comprises a first circuit unit and a second circuit unit;
the first circuit unit comprises a PMOS with a first two-stage diode short circuit and a PMOS with a first cascode connection method which are connected with each other, and the drain end of the PMOS with the first two-stage diode short circuit is connected with the first output end of the PTAT current mirror circuit;
the second circuit unit comprises an NMOS (N-channel metal oxide semiconductor) with a short-circuited second two-stage diode and an NMOS with a second cascode connection method which are mutually connected, and the drain end of the NMOS with the short-circuited second two-stage diode is connected with the first output end of the CTAT current mirror circuit;
the output end of the PMOS with the first cascode connection method and the output end of the NMOS with the second cascode connection method are connected and are used as the output end of the high-temperature current comparator together.
3. The high-low temperature compensation circuit for the bandgap reference source according to claim 1, wherein the low-temperature current comparator comprises a third circuit unit and a fourth circuit unit;
the third circuit unit comprises a PMOS with a short-circuited third two-stage diode and a PMOS with a third cascode connection method which are mutually connected, and the drain end of the PMOS with the short-circuited third two-stage diode is connected with the first output end of the PTAT current mirror circuit;
the fourth circuit unit comprises an NMOS (N-channel metal oxide semiconductor) short-circuited by a fourth two-stage diode and an NMOS (N-channel metal oxide semiconductor) in a fourth cascode method which are mutually connected, and the drain end of the NMOS short-circuited by the fourth two-stage diode is connected with the second output end of the CTAT current mirror circuit;
and the output end of the PMOS in the third cascode connection mode and the output end of the NMOS in the fourth cascode connection mode are connected and are used as the output end of the low-temperature current comparator together.
4. The high-low temperature compensation circuit for the bandgap reference source as claimed in claim 1, wherein the PTAT current mirror circuit comprises two sets of cascode mirror circuits and a set of diode-connected cascode mirror source circuits.
5. The high and low temperature compensation circuit for band gap reference source as claimed in claim 1, wherein there are three sets of cascode mirror circuits and one set of diode-connected cascode mirror source circuit in the CTAT current mirror circuit.
6. The high-low temperature compensation circuit for the bandgap reference source as claimed in claim 1, wherein the high-temperature compensation branch switch is a large-sized PMOS transistor, a source terminal of the large-sized PMOS transistor is connected to the PTAT compensation current source, a gate terminal of the large-sized PMOS transistor is connected to the output terminal of the high-temperature current comparator, and a drain terminal of the large-sized PMOS transistor is connected to the first input terminal of the current summation circuit.
7. The high-low temperature compensation circuit for the bandgap reference source as claimed in claim 1, wherein the low-temperature compensation branch switch is a large-sized PMOS transistor, the source terminal of the large-sized PMOS transistor is connected to the CTAT compensation current source, the gate terminal of the large-sized PMOS transistor is connected to the output terminal of the low-temperature current comparator, and the drain terminal of the large-sized PMOS transistor is connected to the second input terminal of the current summation circuit.
8. The high-low temperature compensation circuit for the bandgap reference source as claimed in claim 1, wherein the current summation circuit comprises a first cascode current mirror, a second cascode current mirror and a first-order bandgap reference current source, an input terminal of the first cascode current mirror is connected to the high-temperature compensation branch switch, an input terminal of the second cascode current mirror is connected to the low-temperature compensation branch switch, a second output terminal of the PTAT current mirror circuit and a third output terminal of the CTAT current mirror circuit are both connected to an input terminal of the first-order bandgap reference current source, and an output terminal of the first cascode current mirror, an output terminal of the second cascode current mirror and an output terminal of the first-order bandgap reference current source are connected as an output terminal of the whole current summation circuit.
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