CN113872555A - Piezoelectric resonator and method for manufacturing same - Google Patents
Piezoelectric resonator and method for manufacturing same Download PDFInfo
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 238000000034 method Methods 0.000 title abstract description 17
- 239000000463 material Substances 0.000 claims description 32
- 239000000758 substrate Substances 0.000 claims description 26
- 230000007547 defect Effects 0.000 claims description 19
- 238000000151 deposition Methods 0.000 claims description 19
- 238000000059 patterning Methods 0.000 claims description 12
- 230000007704 transition Effects 0.000 claims description 11
- 238000002161 passivation Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 238000005498 polishing Methods 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 3
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052593 corundum Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 3
- 238000009413 insulation Methods 0.000 claims description 2
- 230000008878 coupling Effects 0.000 abstract description 11
- 238000010168 coupling process Methods 0.000 abstract description 11
- 238000005859 coupling reaction Methods 0.000 abstract description 11
- 230000009643 growth defect Effects 0.000 abstract description 5
- 230000009467 reduction Effects 0.000 description 19
- 230000008569 process Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 230000003071 parasitic effect Effects 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 230000035772 mutation Effects 0.000 description 5
- 230000001902 propagating effect Effects 0.000 description 5
- 230000017525 heat dissipation Effects 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000013461 design Methods 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000000746 purification Methods 0.000 description 2
- 238000010897 surface acoustic wave method Methods 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- H—ELECTRICITY
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- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/08—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of resonators or networks using surface acoustic waves
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
- H03H9/02543—Characteristics of substrate, e.g. cutting angles
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02535—Details of surface acoustic wave devices
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Abstract
The invention provides a piezoelectric resonator, comprising a bottom electrode; the piezoelectric layer is stacked on the bottom electrode; the top electrode is stacked on one side of the piezoelectric layer, which is far away from the bottom electrode; the acoustic wave reflecting layer structure is formed on one side of the bottom electrode, which is far away from the piezoelectric layer; the top electrode lead-out structure is positioned on one side of the piezoelectric layer, which is far away from the bottom electrode; a space area formed by overlapping and superposing the bottom electrode, the piezoelectric layer, the top electrode and the acoustic wave reflecting layer structure is defined as a resonance area; the top electrode lead-out structure is connected with the top electrode in the resonance area and extends out of the resonance area from the resonance area, and the top electrode lead-out structure is overlapped with the orthographic projection part of the top electrode to the piezoelectric layer. The invention also provides a manufacturing method of the piezoelectric resonator. Compared with the related art, the method for manufacturing the piezoelectric resonator can reduce the influence of the growth defect of the piezoelectric layer on the performance of the device, so that the piezoelectric resonator structure has higher quality factor Q and higher effective electromechanical coupling coefficient.
Description
[ technical field ] A method for producing a semiconductor device
The invention relates to the technical field of piezoelectricity, in particular to a piezoelectric resonator and a manufacturing method thereof.
[ background of the invention ]
With the increasing of intelligent devices and the constant popularization of the internet of things and 5G technologies, the demand for high-performance filters and multi-functional devices is increasing. Acoustic resonators, which are important components of filters and multiplexers, have been the subject of considerable research in recent years. The currently mainstream Acoustic resonance technologies include surface Acoustic wave technology saw (surface Acoustic wave) and bulk Acoustic wave technology baw (bulk Acoustic wave). The resonator adopting the SAW technology occupies the mainstream market of middle and low frequency (below 2 GHz) due to simple manufacturing process and low cost. SAW resonators have the disadvantages of low quality factor values, poor temperature drift of the material and poor compatibility with semiconductor processes. The filter formed by the resonators has the defects of rectangular coefficient difference, high insertion loss and large temperature drift of the center frequency. More fatal is that as the frequency increases, the spacing between the SAW resonator fingers decreases, and the reliability of the device deteriorates while higher demands are placed on the process, and these disadvantages are hindering the SAW resonator from being applied to higher frequency bands. The appearance of the BAW resonator improves the defects of many SAW resonators, and mature semiconductor processes have good compatibility for manufacturing the BAW resonator, but the BAW resonator has complex process and high manufacturing difficulty, so that the cost is high, the BAW resonator is difficult to completely replace the SAW resonator in a middle-high frequency band, and the BAW resonator has low frequency or even no competitiveness. In addition to the development in the field of communications, BAW resonators are also widely used in the field of piezoelectric microphones, pressure sensors or other sensors due to their excellent performance.
The BAW resonator is different from the SAW resonator in that resonance is generated in the piezoelectric thin film by a longitudinal wave, and the propagation direction of the longitudinal wave is the thickness direction of the piezoelectric material. The resonant frequency of the resonator can be conveniently adjusted by adjusting the thicknesses of the piezoelectric material and the electrode material. In order to generate resonance, in addition to the piezoelectric material and the electrode layers arranged above and below it for generating electrical excitation, there are usually acoustic mirrors which reflect wave energy at the interface. Air or Bragg mirrors are the most commonly used mirror structures. The Bragg reflector adopts a laminated structure of a plurality of groups of low-acoustic-impedance materials and high-acoustic-impedance materials which are alternated to realize the reflection of the wave. Such mirrors, although highly reflective, still do not avoid energy leakage along the mirror. Compared with a Bragg reflector, the air has better wave reflection effect and blocks an energy leakage path, so that a resonator with a higher quality factor can be manufactured. In order to introduce air into the resonant structure as a reflector, the related technology is to fabricate a cavity structure in or on a substrate before depositing an electrode layer and a piezoelectric layer, for example, to form a cavity in the substrate, to fill a sacrificial material in the cavity to flatten the surface, to deposit the electrode layer and the piezoelectric layer above the cavity and the substrate, and to contact the sacrificial material with an etchant or an atmosphere capable of corroding the sacrificial material through a pre-reserved release channel to release the cavity, thereby forming the air reflector structure.
When the BAW resonator works, high-frequency voltage is respectively applied to the top electrode and the bottom electrode, under the action of an alternating electric field, the piezoelectric material deforms, a suspended film layer on the cavity or the acoustic reflector vibrates, and longitudinal waves parallel to the thickness direction and clutter propagating along the direction perpendicular to the thickness direction (transverse direction) are generated. Under the alternating voltage of the specific frequency, the suspended film can resonate, and the device has special electrical characteristics, so that the transmission of the specific frequency signal is realized.
In the prior art, although the main mode at the time of resonance is a longitudinal wave mode in principle, some parasitic modes are formed with excitation of the longitudinal wave. The parasitic modes can be standing waves, and form a hybrid peak on the electrical characteristic curve of the device, so that the in-band ripple and insertion loss of the filter are increased; and can also be a clutter propagating laterally, causing energy leakage, increasing filter insertion loss, and reducing the quality factor (Q value) of the device.
Starting from a typical resonator structure, the disadvantages of the prior art are represented by: 1. in the top electrode lead-out area, a defect area is easily generated in the forming process of the part of the piezoelectric layer which is transited from the bottom electrode to the outside of the bottom electrode, so that the acoustic energy loss and the Q value are reduced; 2. since the connection of the top electrode and the top electrode lead-out structure is usually a left-right (transverse) structure, part of the accompanying transverse noise still leaks out of the resonance region through the bridge part/electrode lead-out part; 3. because the top electrode and the bottom electrode can have a superposition area outside the cavity, the area of a non-resonance area is increased, which is equivalent to a parasitic capacitor connected in parallel, and the effective electromechanical coupling coefficient is reduced; on the other hand, as the area of the non-resonance region is increased, the acoustic loss is increased, and the Q value is reduced; 4. in the prior art, the bottom electrode is shortened to the inner side of the cavity, but a defect area generated by the piezoelectric layer in the transition area is close to the tail end of the resonance area, the defect areas still cause energy loss in practical application, the area of the resonance area is reduced due to the shortening of the bottom electrode, the effective electromechanical coupling coefficient keff ^2 is still reduced, meanwhile, the contact area of the bottom electrode and the substrate is also reduced, and the heat dissipation capacity and the structural strength of the device are reduced. 5. When a bridge structure is constructed by a piezoelectric resonator in the related art, a sacrificial layer or a low-acoustic-impedance material is often deposited on a piezoelectric layer, the sacrificial layer or the low-acoustic-impedance material is patterned, and then a top electrode is deposited.
Therefore, it is necessary to provide a new piezoelectric resonator and electronic device to solve the above technical problems.
[ summary of the invention ]
The present invention provides a piezoelectric resonator having a higher quality factor Q and a higher effective electromechanical coupling coefficient, and a method for manufacturing the same.
In order to achieve the above object, the present invention provides a piezoelectric resonator comprising:
a bottom electrode;
a piezoelectric layer stacked on the bottom electrode;
the top electrode is stacked on one side, far away from the bottom electrode, of the piezoelectric layer;
the acoustic wave reflecting layer structure is formed on one side, far away from the piezoelectric layer, of the bottom electrode; and the number of the first and second groups,
the top electrode lead-out structure is only positioned on one side of the piezoelectric layer, which is far away from the bottom electrode;
a space area formed by overlapping and superposing the bottom electrode, the piezoelectric layer, the top electrode and the acoustic wave reflecting layer structure is defined as a resonance area; the top electrode lead-out structure is connected with the top electrode in the resonance area and extends out of the resonance area from the resonance area, and the top electrode lead-out structure and the top electrode are partially overlapped towards the orthographic projection of the piezoelectric layer.
Preferably, the top electrode lead-out structure comprises an electrode connecting end which is at least partially positioned in the resonance area and is overlapped on one side of the top electrode away from the piezoelectric layer to form electric connection, a bridge structure which extends from the electrode connecting end to the outside of the resonance area towards the side away from the top electrode, and a lead-out end which extends from the bridge structure and is connected to an external circuit or a signal wire; the top electrode leading-out structure is connected with the top electrode through the electrode connecting end.
Preferably, the bridge structure is spaced from the piezoelectric layer to form a first air gap, and/or the bridge structure is spaced from the top electrode to form a second air gap.
Preferably, the piezoelectric resonator further includes a substrate supported on a side of the bottom electrode away from the top electrode, the acoustic wave reflection layer structure is a cavity formed by recessing a side of the substrate close to the bottom electrode, and the cavity is at least partially located in the resonance region.
Preferably, the bottom electrode completely covers the cavity.
Preferably, the acoustic wave reflection layer structure is an acoustic reflection mirror which is stacked on one side of the bottom electrode, which is far away from the top electrode, and at least part of the acoustic reflection layer structure is located in the resonance region.
Preferably, the piezoelectric layer forms a defect region, and the defect region is formed in a partial region where the piezoelectric layer abuts against an edge of the bottom electrode and transitions into a partial region outside the bottom electrode.
Preferably, the orthographic projection of the first air gap and the second air gap to the piezoelectric layer completely covers the defect area to prevent the top electrode lead-out structure from contacting the defect area of the piezoelectric layer.
Preferably, the first air gap and/or the second air gap are filled with a functional material for reflecting sound waves and/or isolating insulation.
Preferably, the functional material is AlN or SiO2、SiN、Si、SiC、Al2O3At least one of (1).
Preferably, the piezoelectric resonator further comprises a passivation layer, and the passivation layer is stacked on one side of the top electrode far away from the piezoelectric layer and at least partially covers the top electrode.
Preferably, the piezoelectric resonator further comprises a mass load which is formed on a side of the top electrode away from the piezoelectric layer and can cause acoustic impedance mismatch, and the mass load and a forward projection of the top electrode to the piezoelectric layer respectively at least partially overlap.
Preferably, the piezoelectric resonator further comprises a mass load which is formed on a side of the passivation layer away from the piezoelectric layer and can cause acoustic impedance mismatch, and the mass load and the orthographic projection of the top electrode to the piezoelectric layer are at least partially overlapped.
Preferably, the mass load is arranged at the edge of the top electrode and at least partially located in the resonance region.
Preferably, the mass load and the top electrode lead-out structure together enclose a closed or non-closed annular structure.
The invention also provides a manufacturing method of the piezoelectric resonator, which comprises the following steps:
providing the substrate, and etching the surface of the substrate to form the cavity;
filling the cavity with a sacrificial material, and polishing the cavity by chemical mechanical polishing to make the sacrificial material flush with the substrate;
depositing the bottom electrode on the sacrificial material and the surface of the substrate, and patterning the bottom electrode;
depositing the piezoelectric layer on a side of the bottom electrode away from the substrate;
depositing the top electrode on a side of the piezoelectric layer away from the bottom electrode and patterning the top electrode;
simultaneously depositing sacrificial layers on one side of the top electrode, which is far away from the piezoelectric layer, and one side of the piezoelectric layer, which is far away from the bottom electrode, and patterning the sacrificial layers;
depositing the top electrode lead-out structure on one side of the sacrificial layer far away from the piezoelectric layer, and enabling two ends of the top electrode lead-out structure to respectively extend and be connected to one side of the top electrode far away from the piezoelectric layer and one side of the piezoelectric layer far away from the bottom electrode;
etching a contact hole in the piezoelectric layer such that the contact hole extends from a layer of the piezoelectric layer remote from the bottom electrode to the bottom electrode;
depositing and patterning interconnection metal on one side of the piezoelectric layer, which is far away from the bottom electrode, so that the interconnection metal fills the contact hole and is connected with the bottom electrode;
and releasing the sacrificial layer.
Compared with the prior art, the piezoelectric resonator manufacturing method and the piezoelectric resonator have the advantages that the top electrode and the top electrode leading-out structure are connected in an up-down (longitudinal) connection structure through the traditional left-right (transverse) structure design, and the top electrode edge is provided with the air gap or the functional material for transversely isolating the top electrode and the top electrode leading-out structure, so that the propagation medium mutation is caused in the transverse clutter propagation process, the sound wave energy can be reflected back to the resonance area, part of the transverse clutter is prevented from leaking out of the resonance area through the top electrode leading-out structure area, and the quality factor Q value of the resonator is improved; meanwhile, the top electrode and the top electrode lead-out structure are designed to be in a vertical (longitudinal) connection structure mode, so that the connecting end of the electrode lead-out structure is stacked on the top electrode to form mass load, acoustic impedance mutation and mismatching are caused, acoustic waves transmitted to the area can be reflected back to the resonance area, acoustic wave energy is prevented from leaking out of the resonance area, and the Q value of the resonator is improved; the introduction of the top electrode lead-out structure can reduce the area of a non-resonance region, eliminate the problem of reduction of effective electromechanical coupling coefficient caused by parasitic capacitance, reduce the area of the non-resonance region, reduce acoustic loss and further reduce the reduction of Q value; the bottom electrode extends to the outside of the sound wave reflecting layer structure (cavity), so that the transition area of the piezoelectric layer is far away from the resonance area, the energy loss caused by the growth defect of the piezoelectric layer in the transition area is reduced, the strength and the heat dissipation capacity of the piezoelectric resonator are effectively increased, the reduction of the resonance area is avoided, and the reduction of the effective electromechanical coupling coefficient is not caused.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without inventive efforts, wherein:
FIG. 1 is a schematic structural diagram of a first embodiment of a piezoelectric resonator according to the present invention;
FIG. 2 is a schematic structural diagram of a second embodiment of a piezoelectric resonator according to the present invention;
fig. 3 is a schematic structural diagram of a third piezoelectric resonator embodiment of the present invention;
fig. 4 is a schematic structural view of a fourth piezoelectric resonator embodiment of the present invention;
fig. 5 is a schematic structural diagram of a fifth embodiment of the piezoelectric resonator of the present invention;
fig. 6 is a flow chart of a method of fabricating a piezoelectric resonator according to the present invention.
[ detailed description ] embodiments
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The following description of the embodiments refers to the accompanying drawings for illustrating the specific embodiments in which the invention may be practiced. Directional phrases used herein, such as, for example, upper, lower, front, rear, left, right, inner, outer, lateral, and the like, refer only to the orientation of the appended drawings. Accordingly, the directional terms used are used for explanation and understanding of the present invention, and are not used for limiting the present invention.
Example one
Fig. 1 is a schematic structural diagram of a piezoelectric resonator according to a first embodiment of the invention. The present invention provides a piezoelectric resonator 100 including: bottom electrode 1, piezoelectric layer 2, top electrode 3, acoustic wave reflection layer structure 42, top electrode extraction structure 5.
The piezoelectric layer 2 is stacked on the bottom electrode 1.
The top electrode 3 is stacked on one side of the piezoelectric layer 2 far away from the bottom electrode 1.
The acoustic wave reflecting layer structure 42 is formed on the side of the bottom electrode 1 away from the piezoelectric layer 2. That is, the acoustic wave reflection layer structure 42 is formed under the top electrode 3, the piezoelectric layer 2, and the bottom electrode 1.
The top electrode lead-out structure 5 is located on one side of the piezoelectric layer 2 far away from the bottom electrode 1.
A space region formed by overlapping and overlapping the bottom electrode 1, the piezoelectric layer 2, the top electrode 3, and the acoustic wave reflection layer structure 42 is defined as a resonance region a, i.e., an effective active region. Specifically, the direction in which the bottom electrode 1, the piezoelectric layer 2, and the top electrode 3 are sequentially stacked is defined as the thickness direction of the piezoelectric resonator, the overlapped parts of the bottom electrode 1, the piezoelectric layer 2, the top electrode 3, and the acoustic wave reflection layer structure 42 form a layer structure, and the space covered by the layer structure and the projection of the layer structure along the thickness direction form the resonance area a. In the present embodiment, the top electrode 3 is completely located in the resonance region a, and the bottom electrode 1 is partially located in the resonance region a and partially extends out of the resonance region a. Of course, the top electrode may also be partially located outside the resonance region, and the bottom electrode may not completely cover the acoustic wave reflective layer structure, as desired.
The top electrode lead-out structure 5 is connected with the top electrode 3 in the resonance area A and extends from the resonance area A to the outside of the resonance area A, and the orthographic projection of the top electrode lead-out structure 5 to the piezoelectric layer 2 is partially overlapped with the orthographic projection of the top electrode 3 to the piezoelectric layer 2. The structural arrangement is such that the interconnecting portions of the top electrode 3 and the top electrode lead-out structure 5 are not in a lateral configuration from the left to the right, but in a longitudinal configuration stacked one on top of the other. That is, the top electrode lead-out structure 5 and the top electrode 3 are not of the same layer structure, but may be of the same material, and the top electrode lead-out structure 5 and the top electrode 3 are not formed in the same step process.
Specifically, in this embodiment, the top electrode lead-out structure 5 includes an electrode connecting end 51 at least partially located in the resonance region a and stacked on a side of the top electrode 3 away from the piezoelectric layer 2 to form an electrical connection, a bridge structure 52 extending from the electrode connecting end 51 to the outside of the resonance region a toward the top electrode 3, and a lead-out end 53 extending from the bridge structure 52 and connected to an external circuit or a signal line, and the top electrode lead-out structure 5 is connected to the top electrode 3 through the electrode connecting end 51. The structural electrode connecting end 51 forms a structure longitudinally superposed on the top electrode 3 in the resonance area a, the electrode connecting end 51 formed in the longitudinal vertical structural mode is stacked on the top electrode 3 to form a mass load structure, so that acoustic impedance mutation and mismatching are caused, sound waves transmitted to the area are reflected, sound wave energy is prevented from leaking out of the resonance area a, and the Q value of the piezoelectric resonator 100 is improved.
In addition, in the structure, the top electrode is firstly formed on the piezoelectric layer 2, and then the top electrode lead-out structure 5 is formed, so that the complicated process treatment is not directly carried out on the piezoelectric layer 2 in the resonance area A, the surface quality of the piezoelectric layer 2 can be ensured to the maximum extent, and the energy loss and the Q value reduction caused by the reduction of the surface quality of the piezoelectric layer 2 can be prevented.
The terminals 53 are used for connecting an external circuit or signal line to realize the connection of an external electrical signal to the top electrode 3. And the bottom electrode 1 forms a bottom electrode lead-out structure 11 at the part outside the resonance area similarly, and is used for connecting an external circuit or a signal wire and also realizing the connection of an external electric signal to the bottom electrode 1.
Preferably, in this embodiment, the bridge structure 52 is spaced from the piezoelectric layer 2 to form a first air gap 61, and/or the bridge structure 52 is spaced from the top electrode 3 to form a second air gap 62.
The introduction of the bridge structure 52 and the first air gap 61 can reduce the area of a non-resonance region, reduce the problem of reduction of effective electromechanical coupling coefficient caused by parasitic capacitance, and improve electromechanical conversion capability; meanwhile, the area of a non-resonance region is reduced, so that the acoustic loss is reduced, and the reduction of the Q value of a quality factor is reduced;
the second air gap 62 is configured to provide an air gap structure at the edge of the top electrode 3 to laterally isolate the top electrode 3 from the bridge structure 52, thereby causing abrupt changes in the propagation medium during the propagation of the lateral noise, and the acoustic energy can be reflected back to the resonance region to prevent a portion of the lateral noise from leaking out of the resonance region a through the region, thereby improving the Q value of the piezoelectric resonator 100.
In this embodiment, the piezoelectric resonator 100 further includes a substrate 41 supported on a side of the bottom electrode 1 away from the top electrode 3, the acoustic wave reflection layer structure 42 is a cavity 421 formed by recessing a side of the substrate 41 close to the bottom electrode 1, and at least a portion of the cavity 421 is located in the resonance area a. Preferably, the bottom electrode 1 completely covers the cavity 421. The structural arrangement enables the bottom electrode 1 to extend out of the cavity 421, namely, out of the resonance area A, so that the transition area between the piezoelectric layer 2 and the bottom electrode 1 is far away from the resonance area A, thereby reducing the energy loss caused by the growth defect (formed defect area) of the piezoelectric layer in the transition area and improving the overall performance; the structural strength and heat dissipation capability of the piezoelectric resonator 100 can also be increased; meanwhile, the reduction of the resonance area A is avoided, so that the reduction of the effective electromechanical coupling coefficient caused by the reduction of the resonance area is avoided.
Of course, the acoustic wave reflection layer structure 42 may also be another structure, for example, the acoustic wave reflection layer 42 is an acoustic reflection mirror stacked on the side of the bottom electrode 1 away from the top electrode 3 and at least partially located in the resonance area a, which is easily conceivable, and the principle thereof is the same as that of the structure of the substrate 41 provided with the cavity 421. Further, when the piezoelectric layer 2 is deposited on the bottom electrode 1, a step structure with a slope is formed at a position of the piezoelectric layer 2 corresponding to an edge of the bottom electrode 1, so that a defect region is formed in the piezoelectric layer 2, and the defect region is formed in a partial region where the piezoelectric layer 2 abuts against the edge of the bottom electrode 1 and transits to a partial region outside the bottom electrode 1. In the present embodiment, the defective region is formed in a partial region in the piezoelectric layer 2 disposed opposite to the bridge structure 52.
Preferably, the orthographic projection of the first air gap 61 and the second air gap 62 to the piezoelectric layer 2 completely covers the defect area to prevent the top electrode lead-out structure 5 from contacting the defect area of the piezoelectric layer 2. In this embodiment, the defect region is separated from the bridge structure 52 by the first space gap 61, and in combination with the structure that the bottom electrode 1 extends out of the cavity 421, the transition region of the piezoelectric layer 2 is far from the resonance region, so that the energy loss caused by the piezoelectric layer growth defect (i.e., the defect region) in the transition region is reduced.
Second embodiment
Fig. 2 is a schematic structural diagram of a second embodiment of a piezoelectric resonator according to the present invention. The structure of the piezoelectric resonator 200 is substantially the same as that of the first embodiment, except that:
the second air gap 262 is filled with the functional material 20, which can isolate the bridge structure from the top electrode, reflect the sound wave energy back to the resonance area, and prevent part of the transverse noise waves from leaking out of the resonance area 2A through the area, thereby improving the Q value of the piezoelectric resonator 200.
The functional material 20 is filled in the first air gap 261, so that the area of a non-resonance region can be reduced, and the problem of reduction of an effective electromechanical coupling coefficient caused by parasitic capacitance is solved; meanwhile, the area of the non-resonance region is reduced, so that the acoustic loss is reduced, and the reduction of the Q value is reduced.
Specifically, in the present embodiment, the functional material 20 may be a material having certain acoustic or/and electrical properties, such as AlN, SiO2 SiN、Si、SiC、Al2O3At least one of (1).
Except for the above differences, the structure is the same as that of the first embodiment, and the technical problems to be solved and the technical effects to be achieved are also the same, which are not described herein again.
EXAMPLE III
Fig. 3 is a schematic structural diagram of a third embodiment of a piezoelectric resonator according to the present invention. The structure of the piezoelectric resonator 300 is substantially the same as that of the first embodiment described above, except that:
the piezoelectric resonator 300 further includes a passivation layer 30, and the passivation layer 30 is stacked on a side of the top electrode 303 away from the piezoelectric layer 302 and at least partially covers the top electrode 303. Of course, the electrode connecting terminal 351 needs to be connected to the top electrode 303 through the passivation layer 30.
The top electrode 303 and the piezoelectric layer 302 can be effectively protected by the purification layer 30, and the structural reliability is improved.
Except for the above differences, the structure is the same as that of the first embodiment, and the technical problems to be solved and the technical effects to be achieved are also the same, which are not described herein again.
Example four
Fig. 4 is a schematic structural diagram of a fourth embodiment of a piezoelectric resonator according to the present invention. The structure of the piezoelectric resonator 400 is substantially the same as that of the first embodiment described above, except that:
the piezoelectric resonator 400 further comprises a mass load 40 formed on a side of the top electrode 403 remote from the piezoelectric layer 402, wherein an orthogonal projection of the mass load 40 onto the piezoelectric layer 402 at least partially overlaps an orthogonal projection of the top electrode 403 onto the piezoelectric layer 402. That is, the mass load 40 is formed on the top electrode 403 in a longitudinal stacked structure. The mass load 40 is set to mismatch the acoustic impedance so that the wave propagating in the left-right lateral direction is reflected back into the resonance region 4A when passing to the position, preventing the acoustic energy from leaking out of the resonance region 4A, thereby increasing the Q value of the piezoelectric resonator 400.
In this embodiment, the mass load 40 is disposed at the edge of the top electrode 403 and at least partially located in the resonance region 4A.
Preferably, the mass load 40 and the top electrode lead-out structure 405 jointly enclose an annular structure, specifically, the mass load 40 and the electrode connection end 4051 of the top electrode lead-out structure 405 jointly enclose an annular structure.
The ring structure may be a closed ring or an incompletely closed ring, for example, the mass load 40 is connected to the top electrode lead-out structure 405 so as to jointly enclose a closed ring structure. Alternatively, it is possible that the mass load 40 is spaced from the top electrode lead-out structure 405 and together enclose an incompletely closed ring-like structure.
The mass load 40 is set to mismatch the acoustic impedance so that left and right laterally propagating waves are reflected back to the resonant region 4A when loaded by the mass load 40. That is, the mass load 40 causes a change in acoustic impedance of the piezoelectric resonator 400, so that the acoustic impedance of the position where the mass load 40 is set by the piezoelectric resonator 400 is different from the acoustic impedance of the position where the mass load 40 is not set, and therefore, the acoustic impedances of the position where the mass load 40 is set by the piezoelectric resonator 400 and the position where the mass load 40 is not set are discontinuous, so that the mass load 40 functions as a transverse acoustic wave reflecting structure.
Except for the above differences, the structure is the same as that of the first embodiment, and the technical problems to be solved and the technical effects to be achieved are also the same, which are not described herein again.
EXAMPLE five
Fig. 5 is a schematic structural diagram of a fifth embodiment of a piezoelectric resonator according to the present invention. The structure of the piezoelectric resonator 500 is basically the same as the third embodiment, except that:
the piezoelectric resonator 500 further comprises a mass load 50 formed on a side of the passivation layer 530 remote from the piezoelectric layer 502, wherein the mass load 50 and an orthogonal projection of the top electrode 503 onto the piezoelectric layer at least partially overlap. That is, the mass load 50 is located above the top electrode 503.
The orthographic projection of the mass load 50 onto the piezoelectric layer 502 at least partially overlaps the orthographic projection of the top electrode 503 onto the piezoelectric layer 502. That is, the mass load 50 is formed on the purification layer 530 and on the top electrode 503 in a longitudinal stacked structure. The mass load 50 is set to mismatch the acoustic impedance so that the wave propagating in the left-right lateral direction is reflected back into the resonance region 5A when passing to the position, preventing the acoustic energy from leaking out of the resonance region 5A, thereby increasing the Q value of the piezoelectric resonator 500. Specifically, the structure and the function of the mass load 50 are the same as those in the fourth embodiment, and are not described again here.
Except for the above differences, the structure is the same as that of the third embodiment, and the technical problems to be solved and the technical effects to be achieved are also the same, which are not described herein again.
The present invention further provides a method for manufacturing a piezoelectric resonator, which is described by taking the piezoelectric resonator of the first embodiment shown in fig. 1 as an example, and with reference to fig. 1 and fig. 6, the method includes the following steps:
and step S1, providing the substrate, and etching the surface of the substrate to form the cavity.
Step S2, filling the cavity with a sacrificial material, and polishing the cavity with a chemical mechanical polishing to make the sacrificial material flush with the substrate.
Step S3, depositing the bottom electrode on the sacrificial material and the surface of the substrate, and patterning the bottom electrode.
Step S4, depositing the piezoelectric layer on a side of the bottom electrode away from the substrate.
Step S5, depositing the top electrode on a side of the piezoelectric layer away from the bottom electrode, and patterning the top electrode.
Step S6, depositing sacrificial layers on the side of the top electrode away from the piezoelectric layer and the side of the piezoelectric layer away from the bottom electrode, and patterning the sacrificial layers.
Step S7, depositing the top electrode lead-out structure on the side of the sacrificial layer away from the piezoelectric layer, and respectively extending and connecting two ends of the top electrode lead-out structure to the side of the top electrode away from the piezoelectric layer and the side of the piezoelectric layer away from the bottom electrode.
And step S8, etching a contact hole in the piezoelectric layer, and enabling the contact hole to extend from the layer, far away from the bottom electrode, of the piezoelectric layer to the bottom electrode.
Step S9, depositing and patterning an interconnection metal on a side of the piezoelectric layer away from the bottom electrode, so that the interconnection metal fills the contact hole and is connected with the bottom electrode.
And step S10, releasing the sacrificial layer.
In the piezoelectric resonator manufactured by the method, the top electrode is firstly formed on the piezoelectric layer, and then the top electrode lead-out structure is formed, so that the piezoelectric layer in the resonance area is not directly subjected to complex process treatment, the surface quality of the piezoelectric layer can be ensured to the maximum extent, and the energy loss and the Q value reduction caused by the reduction of the surface quality are prevented.
Compared with the prior art, the piezoelectric resonator manufacturing method and the piezoelectric resonator have the advantages that the top electrode and the top electrode leading-out structure are connected in an up-down (longitudinal) connection structure through the traditional left-right (transverse) structure design, and the top electrode edge is provided with the air gap or the functional material for transversely isolating the top electrode and the top electrode leading-out structure, so that the propagation medium mutation is caused in the transverse clutter propagation process, the sound wave energy can be reflected back to the resonance area, part of the transverse clutter is prevented from leaking out of the resonance area through the top electrode leading-out structure area, and the quality factor Q value of the resonator is improved; meanwhile, the top electrode and the top electrode lead-out structure are designed to be in a vertical (longitudinal) connection structure mode, so that the connecting end of the electrode lead-out structure is stacked on the top electrode to form mass load, acoustic impedance mutation and mismatching are caused, acoustic waves transmitted to the area can be reflected back to the resonance area, acoustic wave energy is prevented from leaking out of the resonance area, and the Q value of the resonator is improved; the introduction of the top electrode lead-out structure can reduce the area of a non-resonance region, eliminate the problem of reduction of effective electromechanical coupling coefficient caused by parasitic capacitance, reduce the area of the non-resonance region, reduce acoustic loss and further reduce the reduction of Q value; the bottom electrode extends to the outside of the sound wave reflecting layer structure (cavity), so that the transition area of the piezoelectric layer is far away from the resonance area, the energy loss caused by the growth defect of the piezoelectric layer in the transition area is reduced, the strength and the heat dissipation capacity of the piezoelectric resonator are effectively increased, the reduction of the resonance area is avoided, and the reduction of the effective electromechanical coupling coefficient is not caused.
While the foregoing is directed to embodiments of the present invention, it will be understood by those skilled in the art that various changes may be made without departing from the spirit and scope of the invention.
Claims (16)
1. A piezoelectric resonator, comprising:
a bottom electrode;
a piezoelectric layer stacked on the bottom electrode;
the top electrode is stacked on one side, far away from the bottom electrode, of the piezoelectric layer;
the acoustic wave reflecting layer structure is formed on one side, far away from the piezoelectric layer, of the bottom electrode; and the number of the first and second groups,
the top electrode lead-out structure is positioned on one side of the piezoelectric layer, which is far away from the bottom electrode;
a space area formed by overlapping and superposing the bottom electrode, the piezoelectric layer, the top electrode and the acoustic wave reflecting layer structure is defined as a resonance area; the top electrode lead-out structure is connected with the top electrode in the resonance area and extends out of the resonance area from the resonance area, and the top electrode lead-out structure and the top electrode are partially overlapped towards the orthographic projection of the piezoelectric layer.
2. The piezoelectric resonator according to claim 1, wherein the top electrode lead-out structure includes an electrode connection end located at least partially within the resonance region and stacked on a side of the top electrode away from the piezoelectric layer to form an electrical connection, a bridge structure extending from the electrode connection end toward the side away from the top electrode to outside the resonance region, and a lead-out extending from the bridge structure and connected to an external circuit or a signal line; the top electrode leading-out structure is connected with the top electrode through the electrode connecting end.
3. The piezoelectric resonator of claim 2, wherein the bridge structure is spaced from the piezoelectric layer to form a first air gap, and/or wherein the bridge structure is spaced from the top electrode to form a second air gap.
4. The piezoelectric resonator of claim 1, further comprising a substrate supported on a side of the bottom electrode remote from the top electrode, wherein the acoustic wave reflecting layer structure is a cavity formed by a recess in a side of the substrate adjacent to the bottom electrode, and wherein the cavity is at least partially located in the resonance region.
5. The piezoelectric resonator of claim 4, wherein the bottom electrode completely covers the cavity.
6. The piezoelectric resonator of claim 1, wherein the acoustic wave reflecting layer structure is an acoustic mirror stacked on a side of the bottom electrode away from the top electrode and at least partially located in the resonance region.
7. The piezoelectric resonator according to claim 3, wherein the piezoelectric layer forms a defect region formed in a partial region where the piezoelectric layer abuts an edge of the bottom electrode and transitions into a partial region outside the bottom electrode.
8. The piezoelectric resonator of claim 7, wherein orthographic projections of the first and second air gaps to the piezoelectric layer completely cover the defect area to prevent contact between the top electrode lead-out structure and the defect area of the piezoelectric layer.
9. The piezoelectric resonator according to claim 3, wherein the first air gap and/or the second air gap are filled with a functional material for reflecting an acoustic wave and/or isolating insulation.
10. The piezoelectric resonator of claim 9, wherein the functional material is AlN, SiO2、SiN、Si、SiC、Al2O3At least one of (1).
11. The piezoelectric resonator of claim 1, further comprising a passivation layer disposed on a side of the top electrode remote from the piezoelectric layer and at least partially covering the top electrode.
12. The piezoelectric resonator of claim 1, further comprising a mass load formed on a side of the top electrode away from the piezoelectric layer that can cause an acoustic impedance mismatch, the mass load at least partially overlapping an orthographic projection of the top electrode onto the piezoelectric layer, respectively.
13. The piezoelectric resonator of claim 11, further comprising a mass load formed on a side of the passivation layer away from the piezoelectric layer to create an acoustic impedance mismatch, the mass load at least partially overlapping an orthographic projection of the top electrode onto the piezoelectric layer, respectively.
14. The piezoelectric resonator of claim 12 or 13, wherein the mass load is disposed at an edge of the top electrode and at least partially within the resonance region.
15. The piezoelectric resonator of claim 12 or 13, wherein the mass load and the top electrode lead-out structure together enclose a closed or non-closed ring structure.
16. A method of fabricating a piezoelectric resonator as claimed in claim 4, comprising the steps of:
providing the substrate, and etching the surface of the substrate to form the cavity;
filling the cavity with a sacrificial material, and polishing the cavity by chemical mechanical polishing to make the sacrificial material flush with the substrate;
depositing the bottom electrode on the sacrificial material and the surface of the substrate, and patterning the bottom electrode;
depositing the piezoelectric layer on a side of the bottom electrode away from the substrate;
depositing the top electrode on a side of the piezoelectric layer away from the bottom electrode and patterning the top electrode;
simultaneously depositing sacrificial layers on one side of the top electrode, which is far away from the piezoelectric layer, and one side of the piezoelectric layer, which is far away from the bottom electrode, and patterning the sacrificial layers;
depositing the top electrode lead-out structure on one side of the sacrificial layer far away from the piezoelectric layer, and enabling two ends of the top electrode lead-out structure to respectively extend and be connected to one side of the top electrode far away from the piezoelectric layer and one side of the piezoelectric layer far away from the bottom electrode;
etching a contact hole in the piezoelectric layer such that the contact hole extends from a layer of the piezoelectric layer remote from the bottom electrode to the bottom electrode;
depositing and patterning interconnection metal on one side of the piezoelectric layer, which is far away from the bottom electrode, so that the interconnection metal fills the contact hole and is connected with the bottom electrode;
and releasing the sacrificial layer.
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