CN117526892A - Film bulk acoustic resonator, manufacturing method thereof and electronic equipment - Google Patents
Film bulk acoustic resonator, manufacturing method thereof and electronic equipment Download PDFInfo
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- CN117526892A CN117526892A CN202311538897.9A CN202311538897A CN117526892A CN 117526892 A CN117526892 A CN 117526892A CN 202311538897 A CN202311538897 A CN 202311538897A CN 117526892 A CN117526892 A CN 117526892A
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention provides a thin film bulk acoustic resonator, a manufacturing method thereof and electronic equipment. And an acoustic wave limiting layer is arranged between the first electrode layer and the second electrode layer so as to limit the acoustic wave at the active area of the film bulk acoustic resonator, and the influence of the part of the second electrode layer corresponding to the acoustic wave limiting layer on the performance of the film bulk acoustic resonator is avoided. In addition, the dielectric layer is arranged on the second electrode layer, the protection layer is covered on the exposed surface of the dielectric layer for protection, the purpose of protecting the second electrode layer by the lamination of the dielectric layer and the protection layer is achieved, meanwhile, the dielectric layer can also provide a certain temperature compensation effect, the function of inhibiting the temperature drift effect is achieved, and the performance of the film bulk acoustic resonator is improved.
Description
Technical Field
The invention relates to the technical field of filters, in particular to a film bulk acoustic resonator, a manufacturing method thereof and electronic equipment.
Background
FBAR (Film Bulk Acoustics Resonator, thin film bulk acoustic resonator) is a resonator currently widely used in the radio frequency field and is manufactured using MEMS (Micro Electro Mechanical Systems, microelectromechanical system) semiconductor surface processing technology and thin film technology. The piezoelectric effect and the inverse piezoelectric effect are utilized, and the signal gating characteristic is combined, so that the signal filtering effect can be realized by a topological structure formed by cascading a plurality of film bulk acoustic resonators. The performance of the existing film bulk acoustic resonator is poor and needs to be improved.
Disclosure of Invention
In view of the above, the invention provides a thin film bulk acoustic resonator, a manufacturing method thereof and electronic equipment, which effectively solve the technical problems existing in the prior art and improve the performance of the thin film bulk acoustic resonator.
In order to achieve the above purpose, the technical scheme provided by the invention is as follows:
a thin film bulk acoustic resonator comprising: a substrate, a lower electrode, a piezoelectric layer, and an upper electrode which are sequentially stacked in the thickness direction;
at least one of the upper electrode and the lower electrode includes a first electrode layer and a second electrode layer superimposed in the thickness direction, and the first electrode layer is located on a side close to the piezoelectric layer; the electrode comprises a first electrode layer, a second electrode layer, a dielectric layer, a protective layer and a protective layer, wherein the first electrode layer and the second electrode layer are arranged between the dielectric layer and the dielectric layer; wherein the sound wave limiting layer is contacted with part of the first electrode layer through the lamination of the dielectric layer and the protective layer.
Correspondingly, the invention also provides a manufacturing method of the film bulk acoustic resonator, which is used for manufacturing the film bulk acoustic resonator and comprises the following steps:
providing a substrate;
sequentially superposing a lower electrode, a piezoelectric layer and an upper electrode on one side of the substrate in the thickness direction; wherein at least one of the upper electrode and the lower electrode includes a first electrode layer and a second electrode layer superimposed in the thickness direction, and the first electrode layer is located on an electrical side close to the piezoelectric layer; the electrode comprises a first electrode layer, a second electrode layer, a dielectric layer, a protective layer and a protective layer, wherein the first electrode layer and the second electrode layer are arranged between the dielectric layer and the dielectric layer; wherein the sound wave limiting layer is contacted with part of the first electrode layer through the lamination of the dielectric layer and the protective layer.
Correspondingly, the invention also provides electronic equipment which comprises the film bulk acoustic resonator.
Compared with the prior art, the technical scheme provided by the invention has at least the following advantages:
The invention provides a film bulk acoustic resonator, a manufacturing method thereof and electronic equipment, wherein the film bulk acoustic resonator comprises: a substrate, a lower electrode, a piezoelectric layer, and an upper electrode which are sequentially stacked in the thickness direction; at least one of the upper electrode and the lower electrode includes a first electrode layer and a second electrode layer superimposed in the thickness direction, and the first electrode layer is located on a side close to the piezoelectric layer; the electrode comprises a first electrode layer, a second electrode layer, a dielectric layer, a protective layer and a protective layer, wherein the first electrode layer and the second electrode layer are arranged between the dielectric layer and the dielectric layer; wherein the sound wave limiting layer is contacted with part of the first electrode layer through the lamination of the dielectric layer and the protective layer.
From the above, it can be seen that in the technical solution provided by the present invention, at least one of the upper electrode and the lower electrode is configured as a stacked structure of the first electrode layer and the second electrode layer, and the Q value of the thin film bulk acoustic resonator can be improved by reducing the resistance value of the electrode. Meanwhile, an acoustic wave limiting layer is arranged between the first electrode layer and the second electrode layer so as to limit the acoustic wave at the active area of the film bulk acoustic resonator, and the influence of the part of the second electrode layer corresponding to the acoustic wave limiting layer on the performance of the film bulk acoustic resonator is avoided. The acoustic wave limiting layer is in contact with the first electrode layer through the lamination of the dielectric layer and the protective layer, and the effect of limiting the acoustic wave to the active region can be better achieved.
In addition, the dielectric layer is arranged on the second electrode layer, the protection layer is covered on the exposed surface of the dielectric layer for protection, the purpose of protecting the second electrode layer by the lamination of the dielectric layer and the protection layer is achieved, meanwhile, the dielectric layer can also provide a certain temperature compensation effect, the function of inhibiting the temperature drift effect is achieved, and the performance of the film bulk acoustic resonator is improved.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 4 is a flowchart of a method for fabricating a thin film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 5 is a schematic diagram of a structure of another thin film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 6 is a flowchart of another method for fabricating a thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 7a to 7j are schematic structural views corresponding to each step in fig. 6;
FIG. 8 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 9 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 10 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 12 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 13 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 14 is a schematic diagram of a structure of another thin film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 15 is a schematic diagram of a structure of another film bulk acoustic resonator according to an embodiment of the present invention;
FIG. 16 is a schematic diagram of a structure of another thin film bulk acoustic resonator according to an embodiment of the present invention;
fig. 17 is a schematic structural diagram of another film bulk acoustic resonator according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
As described in the background art, the performance of the existing film bulk acoustic resonator is poor and needs to be improved.
In particular, the rapid development of communication technology requires that the operating frequency of resonators be continually increased, for example, the frequency of the 5G communication band (sub-6G) is between 3GHz and 6GHz. To accommodate higher operating frequencies, the thickness of the piezoelectric layer of the thin film bulk acoustic resonator needs to be made thinner, however, too thin a piezoelectric layer may result in a decrease in the quality factor (i.e., Q value) of the resonator, which may be increased by increasing the thickness of the electrode to decrease the resistance of the electrode. However, thickened electrodes affect the resonant and antiresonant frequencies of the resonator, potentially compromising the performance of the resonator.
Based on the above, the embodiment of the invention provides a film bulk acoustic resonator, a manufacturing method thereof and electronic equipment, which effectively solve the technical problems existing in the prior art and improve the performance of the film bulk acoustic resonator.
In order to achieve the above objective, the technical solutions provided by the embodiments of the present invention are described in detail below, with reference to fig. 1 to 17.
As described with reference to fig. 1, a schematic structural diagram of a thin film bulk acoustic resonator according to an embodiment of the present invention is provided, where the thin film bulk acoustic resonator includes: the substrate 100, the lower electrode 201, the piezoelectric layer 300, and the upper electrode 202 are stacked in this order in the thickness direction.
At least one of the upper electrode 202 and the lower electrode 201 includes a first electrode layer 210 and a second electrode layer 220 stacked in the thickness direction, and the first electrode layer 210 is located on a side close to the piezoelectric layer 300; the first electrode layer 210 and the second electrode layer 220 include an acoustic wave limiting layer 230 therebetween, a dielectric layer 240 between the acoustic wave limiting layer 230 and the first electrode layer 210, and a protective layer 250 between the dielectric layer 240 and the acoustic wave limiting layer 230, the protective layer 250 covering an exposed surface of the dielectric layer 240; wherein the acoustic wave confining layer 230 is in contact with a portion of the first electrode layer 210 through the stack of the dielectric layer 240 and the protective layer 250.
As shown in fig. 1, the upper electrode 202 provided in the embodiment of the present invention may be configured as a stacked structure of a first electrode layer 210 and a second electrode layer 220. Alternatively, as shown in fig. 2, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is provided, where the lower electrode 201 provided in the embodiment of the present invention may also be configured as a stacked structure of the first electrode layer 210 and the second electrode layer 220. Alternatively, as shown in fig. 3, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is provided, where the lower electrode 201 and the upper electrode 202 provided in the embodiment of the present invention may be configured as a stacked structure of the first electrode layer 210 and the second electrode layer 220.
It can be appreciated that in the technical solution provided by the embodiment of the present invention, at least one of the upper electrode and the lower electrode is configured as a stacked structure of the first electrode layer and the second electrode layer, so that the Q value of the thin film bulk acoustic resonator can be improved by reducing the resistance value of the electrode. Meanwhile, an acoustic wave limiting layer is arranged between the first electrode layer and the second electrode layer so as to limit the acoustic wave at the active area of the film bulk acoustic resonator, and the influence of the part of the second electrode layer corresponding to the acoustic wave limiting layer on the performance of the film bulk acoustic resonator is avoided. The acoustic wave limiting layer is in contact with the first electrode layer through the lamination of the dielectric layer and the protective layer, and the effect of limiting the acoustic wave to the active region can be better achieved.
In addition, according to the technical scheme provided by the embodiment of the invention, the dielectric layer is arranged on the second electrode layer, and the protective layer is covered on the exposed surface of the dielectric layer for protection, so that the purpose of protecting the second electrode layer by the lamination of the dielectric layer and the protective layer is realized, meanwhile, the dielectric layer can also provide a certain temperature compensation effect, the function of inhibiting the temperature drift effect is achieved, and the performance of the film bulk acoustic resonator is improved.
Correspondingly, the embodiment of the invention also provides a manufacturing method of the film bulk acoustic resonator. Referring specifically to fig. 4, a flowchart of a method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention is shown, where the manufacturing method is used to manufacture the thin film bulk acoustic resonator provided in any one of the foregoing embodiments, and the manufacturing method includes:
s1, providing a substrate.
S2, sequentially stacking a lower electrode, a piezoelectric layer and an upper electrode on one side of the substrate in the thickness direction. Wherein at least one of the upper electrode and the lower electrode includes a first electrode layer and a second electrode layer superimposed in the thickness direction, and the first electrode layer is located on an electrical side close to the piezoelectric layer; the electrode comprises a first electrode layer, a second electrode layer, a dielectric layer, a protective layer and a protective layer, wherein the first electrode layer and the second electrode layer are arranged between the dielectric layer and the dielectric layer; wherein the sound wave limiting layer is contacted with part of the first electrode layer through the lamination of the dielectric layer and the protective layer.
The structure and the manufacturing method of the thin film bulk acoustic resonator according to the embodiments of the present invention are described in more detail below with reference to the accompanying drawings. As shown in any one of fig. 1 to 3, the thin film bulk acoustic resonator provided in the embodiment of the present invention includes an acoustic mirror 400 located between the substrate 100 and the lower electrode 201, and in the thickness direction, an overlapping area of the acoustic mirror 400, the lower electrode 201, the piezoelectric layer 300, and the upper electrode 202 is an active area.
As shown in any of fig. 1 to 3, an acoustic mirror 400 provided in an embodiment of the present invention may be located on a surface of the substrate 100 facing the side of the lower electrode 201. Alternatively, as shown in fig. 5, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is provided, where the acoustic mirror 400 may be located in the substrate 100, that is, the substrate 100 includes a recess at a set area, and the acoustic mirror 400 is located in the recess.
Optionally, the acoustic mirror provided by the embodiment of the present invention includes an air cavity or a bragg acoustic mirror. The manufacturing method of the acoustic mirror provided by the embodiment of the invention can be as follows: firstly, forming a first material layer on a substrate (or forming a groove in a set area of the substrate when the acoustic mirror is positioned in the substrate, then forming the first material layer in the groove), and then sequentially superposing to form a lower electrode, a piezoelectric layer, an upper electrode and the like; when the acoustic mirror is an air cavity, the first material layer is finally removed to form the air cavity; or when the acoustic mirror is a bragg acoustic mirror, the first material layer is directly manufactured into the bragg acoustic mirror when the first material layer is formed, and finally the first material layer is not required to be removed.
Referring to fig. 6 to 7j, fig. 6 is a flowchart of another method for manufacturing a thin film bulk acoustic resonator according to an embodiment of the present invention, and fig. 7a to 7j are schematic structural diagrams corresponding to each step in fig. 6, where the electrode 202 above fig. 6 to 7j includes the related structures of the first electrode layer 210 and the second electrode layer 220, and the acoustic mirror is an air cavity and is located on the surface of the substrate 100 for illustration.
As shown in fig. 7a, a substrate 100 is provided corresponding to step S10.
The substrate provided in the embodiment of the present invention may be made of silicon (Si), germanium (Ge), germanium silicon (SiGe), silicon carbide (SiC), silicon germanium carbide (SiGeC), indium arsenide (InAs), gallium arsenide (GaAs), indium phosphide (InP) or other III/V compound semiconductors, or may include a multilayer structure formed by these semiconductors (i.e., the substrate may be a laminated structure of multiple sublayers, and any one of the sublayers may be formed by the above materials), or may be a ceramic substrate, a quartz or glass substrate, etc. of Silicon On Insulator (SOI), silicon on insulator (SSOI), silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI), or germanium on insulator (GeOI), or may be a double-sided polished silicon wafer (Double Side Polished Wafers, DSP), or may be a ceramic substrate, quartz or glass substrate, etc. without specific limitation.
As shown in fig. 7b, a first material layer 410 is formed on the surface of the substrate 100 corresponding to step S20.
It can be appreciated that when the acoustic mirror provided in the embodiment of the present invention is an air cavity and is located on the surface of the substrate, the first material layer may be formed on the surface of the substrate, and the first material layer is a sacrificial material, which is removed in a subsequent process.
Optionally, the acoustic mirror provided in the embodiment of the present invention may be a bragg reflector, so that the first material layer is a relevant material of the bragg reflector. In addition, when the acoustic mirror is located within the substrate, a recess needs to be formed in the substrate, then a sacrificial material or a material associated with the Bragg reflector is fabricated in the recess, and then the sacrificial material is removed in a subsequent step to obtain an air cavity or the Bragg reflector is retained in the material associated with the Bragg reflector.
As shown in fig. 7c, corresponding to step S30, the lower electrode 201 is formed on the side of the first material layer 410 facing away from the substrate 100.
The lower electrode provided by the embodiment of the invention can be a single-layer electrode, and the single-layer electrode can be made of metal or alloy, and specifically can comprise at least one of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium and the like. Alternatively, the bottom electrode may include a first electrode layer and a second electrode layer, and any one of the first electrode layer and the second electrode layer may be made of metal or alloy, and specifically may include at least one of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, and the like.
Optionally, when the lower electrode provided in the embodiment of the present invention includes a first electrode layer, a second electrode layer, and a related dielectric layer, a protective layer, and a sound wave limiting layer, the manufacturing method of the lower electrode is: firstly, forming a second electrode layer on one side of the first material layer, which is away from the substrate; then forming a second material layer in a set area of one side of the second electrode layer, which is away from the substrate; forming a first groove on the second material layer, and forming a protective layer in the first groove; forming a second groove on the protective layer, and forming a dielectric layer in the second groove; and finally, forming a first electrode layer on one side of the dielectric layer, which is away from the substrate.
In an embodiment of the present invention, the acoustic wave limiting layer provided in the embodiment of the present invention is a vacuum layer, a gas layer, or a high acoustic impedance material layer. Thus, when the acoustic wave confining layer is a vacuum layer or a gas layer, the second material layer may be a sacrificial material that is removed in a subsequent removal process and inflated or evacuated. And when the sound wave limiting layer is a high acoustic impedance material layer, the second material layer is the high acoustic impedance material, and the high acoustic impedance material layer is obtained by reserving the layer in the subsequent removing process.
In an embodiment of the present invention, the first electrode layer is located on a side close to the piezoelectric layer, and the second electrode layer is located on a side far away from the piezoelectric layer, where the thickness of the second electrode layer is greater than that of the first electrode layer, so that the effect of the portion of the thicker second electrode layer corresponding to the acoustic wave limiting layer on the performance of the thin film bulk acoustic resonator is better avoided while the resistance of the whole electrode is reduced by overlapping the thinner first electrode layer and the thicker second electrode layer. And, the materials of the first electrode layer and the second electrode layer provided by the embodiment of the invention may be the same. Alternatively, the materials of the first electrode layer and the second electrode layer provided by the embodiment of the invention may be different, and the resistivity of the first electrode layer and the second electrode layer may be different, where the resistivity of the second electrode layer is smaller than that of the first electrode layer, and the second electrode layer may preferably be a material such as silver, copper, gold, aluminum, etc. with a small resistivity, so that the resistance of the overall electrode may be further reduced.
As shown in fig. 7d, corresponding to step S40, a piezoelectric layer 300 is formed on the side of the lower electrode 201 facing away from the substrate 100.
The piezoelectric layer provided by the embodiment of the invention can be made of aluminum nitride (AlN), zinc oxide (ZnO), lead zirconate titanate (PZT), lithium niobate (LiNbO 3), quartz (Quartz), potassium niobate (KNbO 3), lithium tantalate (LiTaO 3) or the like. Furthermore, rare earth element doped materials with a certain atomic ratio can be doped in the piezoelectric layer so as to improve the electromechanical coupling coefficient of the resonator.
As shown in fig. 7e, corresponding to step S50, a first electrode layer 210 of an upper electrode is formed on the side of the piezoelectric layer 300 facing away from the substrate 100.
The material of the first electrode layer of the upper electrode provided by the embodiment of the invention can be metal or alloy, and specifically can comprise at least one of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium and the like.
As shown in fig. 7f, in step S60, the dielectric layer 240 is formed in the set region of the first electrode layer 210.
The material of the dielectric layer provided by the embodiment of the invention can be SiO 2 ，Si 3 N 4 ，SiO 2 F, etc., and the embodiment of the present invention is not particularly limited.
As shown in fig. 7g, a protective layer 250 is formed on the dielectric layer 240 on the side facing away from the substrate 100, corresponding to step S70.
The material of the protective layer provided by the embodiment of the invention can be AlN material. Alternatively, the protective layer may be a conductive protective layer, and the material of the conductive protective layer may be a metal or alloy material, which may specifically include at least one of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, and the like.
It can be understood that when the protective layer provided by the embodiment of the invention covers the dielectric layer, the protective layer contacts the first electrode layer, and when the protective layer is made of metal or alloy, the dielectric layer can also play a role in sound wave limitation, so that the performance of the film bulk acoustic resonator is further improved.
As shown in fig. 7h, in correspondence to step S80, a second material layer 231 is formed on the side of the protective layer 250 facing away from the substrate 100.
In an embodiment of the present invention, the acoustic wave limiting layer provided in the embodiment of the present invention is a vacuum layer, a gas layer, or a high acoustic impedance material layer. Thus, when the acoustic wave confining layer is a vacuum layer or a gas layer, the second material layer may be a sacrificial material that is removed in a subsequent removal process and inflated or evacuated. And when the sound wave limiting layer is a high acoustic impedance material layer, the second material layer is the high acoustic impedance material, and the high acoustic impedance material layer is obtained by reserving the layer in the subsequent removing process.
As shown in fig. 7i, in step S90, a second electrode layer 220 is formed on a side of the second material layer 231 facing away from the substrate 100.
According to the embodiment of the invention, the second electrode layer and the first electrode layer are in overlapped contact, so that the resistance of the whole electrode is reduced, and the Q value of the resonator is improved. The material of the second electrode layer may be metal or alloy, and specifically may include at least one of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, and the like.
According to the embodiment of the invention, the first electrode layer is positioned on the side close to the piezoelectric layer, and the second electrode layer is positioned on the side far away from the piezoelectric layer, wherein the thickness of the second electrode layer is larger than that of the first electrode layer, so that the influence of the part of the thicker second electrode layer corresponding to the sound wave limiting layer on the performance of the film bulk acoustic resonator is better avoided while the integral resistance of the electrode is reduced through superposition of the thinner first electrode layer and the thicker second electrode layer. And, the materials of the first electrode layer and the second electrode layer provided by the embodiment of the invention may be the same. Alternatively, the materials of the first electrode layer and the second electrode layer provided by the embodiment of the invention may be different, and the resistivity of the first electrode layer and the second electrode layer may be different, where the resistivity of the second electrode layer is smaller than that of the first electrode layer, and the second electrode layer may preferably be a material such as silver, copper, gold, aluminum, etc. with a small resistivity, so that the resistance of the overall electrode may be further reduced.
As shown in fig. 7j, the first material layer 410 and the second material layer 231 are removed, corresponding to step S100, resulting in the air cavity 400 and the acoustic wave confinement layer 230.
It can be appreciated that when the acoustic mirror provided in the embodiment of the present invention is a bragg mirror, the bragg mirror material of the first material layer is preserved to obtain the bragg mirror. And when the acoustic wave limiting layer provided by the embodiment of the invention is a high acoustic impedance material layer, retaining the high acoustic impedance material of the second material layer to obtain the high acoustic impedance material layer, which needs to be specifically analyzed according to practical application, and the embodiment of the invention is not particularly limited.
In an embodiment of the present invention, the thin film bulk acoustic resonator provided in the embodiment of the present invention may be provided with an independent acoustic mirror; in addition, when the lower electrode provided by the embodiment of the invention comprises the related structures of the first electrode layer and the second electrode layer, the function of the acoustic mirror can be multiplexed by the sound wave limiting layer, and the acoustic mirror does not need to be prepared. As shown in fig. 8, a schematic structural diagram of a further thin film bulk acoustic resonator according to an embodiment of the present invention is provided, where the lower electrode 201 provided by the embodiment of the present invention includes the first electrode layer 210 and the second electrode layer 220, where there is no acoustic mirror between the substrate 100 and the lower electrode 201, and in the thickness direction, an overlapping area of the lower electrode 201, the acoustic wave limiting layer 230, the piezoelectric layer 300, and the upper electrode 202 is an active area. Further, the function of the multiplexing acoustic mirror is replaced by the acoustic wave confinement layer 230, thereby simplifying the structure of the thin film bulk acoustic resonator.
In order to improve the performance of the film bulk acoustic resonator, the embodiment of the invention can further optimize the structure of the film bulk acoustic resonator. As shown in fig. 9, a schematic structural diagram of a further film bulk acoustic resonator according to an embodiment of the present invention is provided, where, on at least one side of the active area, the film bulk acoustic resonator further includes a boundary ring 260 located at the upper electrode 202 and extending along a side of the active area and disposed in a ring shape, and a stray mode of an acoustic wave can be reflected by the boundary ring 260 and the acoustic wave is confined at the active area, so as to improve performance of the film bulk acoustic resonator.
As further shown in fig. 9, when the upper electrode 202 includes the first electrode layer 210 and the second electrode layer 220, the boundary ring 260 is located between the first electrode layer 210 and the second electrode layer 220 and is in communication with the acoustic wave limiting layer 230.
In an embodiment of the present invention, the material of the boundary ring provided in the embodiment of the present invention may be the same as the material of the acoustic wave limiting layer, for example, the boundary ring may be a vacuum boundary ring when the acoustic wave limiting layer is a vacuum layer, the boundary ring is a gas boundary ring when the acoustic wave limiting layer is a gas layer, and the boundary ring is a high acoustic impedance material boundary ring when the acoustic wave limiting layer is a high acoustic impedance material. In addition, the material of the boundary ring provided by the embodiment of the invention can be different from that of the sound wave limiting layer, and the invention is not particularly limited.
Referring to fig. 10, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is shown, where the dielectric layer 240 further includes a supporting protrusion 241 at the boundary ring 260. At the supporting protrusion 241, the stack of the supporting protrusion 241 and the protective layer 250 contacts with the surface of the second electrode layer 220 facing the first electrode layer 210, so that stability of the boundary ring 260 is improved by the supporting protrusion 241, and a suppression effect of a stray mode of an acoustic wave is more realized.
As shown in fig. 11, a schematic structural diagram of a thin film bulk acoustic resonator according to an embodiment of the present invention is provided, where when the upper electrode 202 includes the first electrode layer 210 and the second electrode layer 220, the boundary ring 260 is located between the first electrode layer 210 and the second electrode layer 220, and the boundary ring 260 is isolated from the acoustic wave limiting layer 230 by the first electrode layer 210 and the second electrode layer 220.
Or, when the upper electrode provided by the embodiment of the invention includes the first electrode layer and the second electrode layer, the boundary ring may also be located between the upper electrode and the piezoelectric layer, which is not particularly limited, so long as the effect of forming the boundary ring on the upper electrode side is satisfied, so as to achieve the effect of suppressing the stray mode of the acoustic wave.
As shown in fig. 1, the contact area between the acoustic wave limiting layer 230 and the first electrode layer 210 provided in the embodiment of the present invention is located in the stack of the dielectric layer 240 and the protective layer 250, and faces the edge area of the contact interface of at least one side of the first electrode layer 210 and the second electrode layer 220.
It should be noted that, the acoustic mirror, the active region and the dielectric layer provided in the embodiment of the present invention are all annular in a top view angle of the thin film bulk acoustic resonator (i.e., a direction from the substrate to the piezoelectric layer), and an edge of the dielectric layer is an inner ring edge or an outer ring edge of the annular dielectric layer. According to the technical scheme provided by the embodiment of the invention, the contact area of the sound wave limiting layer and the first electrode layer is arranged in the edge area of at least one side of the dielectric layer, so that sound waves can be better limited in the active area, and the performance of the resonator is improved.
In an embodiment of the present invention, the dielectric layer may be patterned, so that the dielectric layer forms a structure with a plurality of protruding portions. As shown in fig. 12, the dielectric layer 240 provided in the embodiment of the present invention includes a plurality of protruding portions 242, and by using the support of the protruding portions 242, the problem that the first electrode layer 210 contacts with the second electrode layer 220 caused when the acoustic wave limiting layer 230 collapses during the working process of the film bulk acoustic resonator can be avoided, thereby improving the stability of the working performance of the film bulk acoustic resonator.
As further shown in fig. 12, at least some of the plurality of protrusions 242 provided in the embodiment of the present invention have the same size. Alternatively, as shown in fig. 13, a schematic structural diagram of another thin film bulk acoustic resonator according to an embodiment of the present invention is provided, where at least some of the plurality of protruding portions 242 provided in the embodiment of the present invention have different sizes from the remaining protruding portions.
As further shown in fig. 12, the spacing between at least some adjacent two of the plurality of protruding portions 242 is the same. Alternatively, as further shown in fig. 13, the interval between at least some adjacent two protrusions 242 of the plurality of protrusions 242 is different from the interval between the other adjacent two protrusions 242.
It can be understood that the sizes of all the protruding portions and the intervals between the adjacent protruding portions provided by the embodiment of the invention can be the same, and all the protruding portions can be arranged in an array, so that the manufacturing of the dielectric layer is facilitated. Or, the sizes and the rest sizes of part of the protruding parts are different, and the intervals between the adjacent protruding parts are different from the intervals between the rest protruding parts, so that discontinuity of acoustic impedance change is realized, and better sound wave reflection and energy limiting effects are realized.
Further, the protruding portion provided by the embodiment of the invention can also play a role in supporting a gap between the first electrode layer and the second electrode layer. As shown in fig. 13, a schematic structural diagram of another film bulk acoustic resonator according to an embodiment of the present invention is provided, where, at the protrusion 242, the stack of the protrusion 242 and the protection layer 250 is in contact with the surface of the second electrode layer 220 facing the first electrode layer 210, so as to improve the structural stability of the film bulk acoustic resonator.
Referring to fig. 15, a schematic structural diagram of another film bulk acoustic resonator according to an embodiment of the present invention is shown, where the second electrode layer 220 is in an arch shape protruding toward a side of the second electrode layer facing away from the first electrode layer 210 at the acoustic wave limiting layer 230, so that strength of the second electrode layer 220 at the acoustic wave limiting layer 230 is improved, collapse probability of the second electrode layer 220 is reduced, and structural stability of the film bulk acoustic resonator is improved.
Referring to fig. 16, a schematic structural diagram of another film bulk acoustic resonator according to an embodiment of the present invention is shown, where the film bulk acoustic resonator according to the embodiment of the present invention further includes: at least one auxiliary layer 270 between the protective layer 250 and the acoustic wave defining layer 230 and sequentially stacked in the thickness direction, the auxiliary layer 270 including an auxiliary dielectric layer 271 near one side of the protective layer 250 and an auxiliary protective layer 272 far from one side of the protective layer 250.
It can be understood that the embodiment of the invention provides the same lamination of the auxiliary layer and the dielectric layer as the protective layer, so that the performance of the film bulk acoustic resonator can be improved by arranging more lamination structures of the dielectric layer and the protective layer. Optionally, the material of the auxiliary dielectric layer and the material of the dielectric layer are the same, and the material of the auxiliary protective layer and the material of the protective layer are the same, which is not particularly limited.
In any of the above embodiments of the present invention, the thin film bulk acoustic resonator provided in the embodiment of the present invention further includes a passivation layer covering one side of the upper electrode, and the passivation layer protects the thin film bulk acoustic resonator from being damaged. Referring to fig. 17, a schematic structural diagram of another film bulk acoustic resonator according to an embodiment of the present invention is shown, where the film bulk acoustic resonator according to the embodiment of the present invention includes a passivation layer 500 disposed on one side of the upper electrode 202.
Correspondingly, the embodiment of the invention also provides electronic equipment, which comprises the film bulk acoustic resonator provided by the embodiment.
The embodiment of the invention provides a film bulk acoustic resonator, a manufacturing method thereof and electronic equipment, wherein the film bulk acoustic resonator comprises: a substrate, a lower electrode, a piezoelectric layer, and an upper electrode which are sequentially stacked in the thickness direction; at least one of the upper electrode and the lower electrode includes a first electrode layer and a second electrode layer superimposed in the thickness direction, and the first electrode layer is located on a side close to the piezoelectric layer; the electrode comprises a first electrode layer, a second electrode layer, a dielectric layer, a protective layer and a protective layer, wherein the first electrode layer and the second electrode layer are arranged between the dielectric layer and the dielectric layer; wherein the sound wave limiting layer is contacted with part of the first electrode layer through the lamination of the dielectric layer and the protective layer.
As can be seen from the above, in the technical solution provided in the embodiments of the present invention, at least one of the upper electrode and the lower electrode is configured as a stacked structure of the first electrode layer and the second electrode layer, so that the Q value of the thin film bulk acoustic resonator can be improved by reducing the resistance value of the electrode. Meanwhile, an acoustic wave limiting layer is arranged between the first electrode layer and the second electrode layer so as to limit the acoustic wave at the active area of the film bulk acoustic resonator, and the influence of the part of the second electrode layer corresponding to the acoustic wave limiting layer on the performance of the film bulk acoustic resonator is avoided. The acoustic wave limiting layer is in contact with the first electrode layer through the lamination of the dielectric layer and the protective layer, and the effect of limiting the acoustic wave to the active region can be better achieved.
In addition, according to the technical scheme provided by the embodiment of the invention, the dielectric layer is arranged on the second electrode layer, and the protective layer is covered on the exposed surface of the dielectric layer for protection, so that the purpose of protecting the second electrode layer by the lamination of the dielectric layer and the protective layer is realized, meanwhile, the dielectric layer can also provide a certain temperature compensation effect, the function of inhibiting the temperature drift effect is achieved, and the performance of the film bulk acoustic resonator is improved.
In the description of the present invention, it should be understood that the directions or positional relationships as indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", "axial", "radial", "circumferential", etc., are based on the directions or positional relationships shown in the drawings are merely for convenience of description and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the invention.
Furthermore, the terms "first," "second," and the like, as used herein, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include at least one such feature. In the description of the present invention, the meaning of "plurality" means at least two, for example, two, three, etc., unless specifically defined otherwise.
In the present invention, unless explicitly specified and limited otherwise, terms such as "mounted," "connected," "secured," and the like are to be construed broadly and may be, for example, fixedly attached, detachably attached, or integrally formed; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly, through intermediaries, or both, may be in communication with each other or in interaction with each other, unless expressly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be the first and second features in direct contact, or the first and second features in indirect contact via an intervening medium. Moreover, a first feature being "above," "over" and "on" a second feature may be a first feature being directly above or obliquely above the second feature, or simply indicating that the first feature is level higher than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is less level than the second feature.
In the present disclosure, the terms "one embodiment," "some embodiments," "examples," "specific examples," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the present disclosure. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
While embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and not to be construed as limiting the invention, and that variations, modifications, alternatives and variations may be made to the above embodiments by one of ordinary skill in the art within the scope of the invention.
Claims (19)
1. A thin film bulk acoustic resonator, comprising: a substrate, a lower electrode, a piezoelectric layer, and an upper electrode which are sequentially stacked in the thickness direction;
At least one of the upper electrode and the lower electrode includes a first electrode layer and a second electrode layer superimposed in the thickness direction, and the first electrode layer is located on a side close to the piezoelectric layer; the electrode comprises a first electrode layer, a second electrode layer, a dielectric layer, a protective layer and a protective layer, wherein the first electrode layer and the second electrode layer are arranged between the dielectric layer and the dielectric layer; wherein the sound wave limiting layer is contacted with part of the first electrode layer through the lamination of the dielectric layer and the protective layer.
2. The thin film bulk acoustic resonator of claim 1, wherein an acoustic mirror is included between the substrate and the lower electrode, and an overlapping region of the acoustic mirror, the lower electrode, the piezoelectric layer, and the upper electrode in the thickness direction is an active region.
3. The thin film bulk acoustic resonator of claim 2 wherein the acoustic mirror comprises an air cavity or a bragg acoustic mirror.
4. The thin film bulk acoustic resonator according to claim 1, characterized in that the lower electrode comprises the first electrode layer and the second electrode layer, wherein there is no acoustic mirror between the substrate and the lower electrode, wherein in the thickness direction, overlapping areas of the lower electrode, the acoustic wave confining layer, the piezoelectric layer and the upper electrode are active areas.
5. The thin film bulk acoustic resonator of claim 1, wherein the first electrode layer is located on a side closer to the piezoelectric layer and the second electrode layer is located on a side farther from the piezoelectric layer, wherein a thickness of the second electrode layer is greater than a thickness of the first electrode layer.
6. The thin film bulk acoustic resonator of claim 1, wherein the first electrode layer and the second electrode layer are the same material;
alternatively, the materials of the first electrode layer and the second electrode layer are different, and the resistivities of the first electrode layer and the second electrode layer are different.
7. The thin film bulk acoustic resonator of claim 1 wherein the acoustic confinement layer is a vacuum layer, a gas layer, or a layer of high acoustic impedance material.
8. The thin film bulk acoustic resonator of any of claims 2-4, further comprising a boundary ring at the upper electrode and extending in a ring-shape along a side of the active region on at least one side of the active region.
9. The thin film bulk acoustic resonator of claim 8, wherein when the upper electrode comprises the first electrode layer and the second electrode layer, the boundary ring is located between the first electrode layer and the second electrode layer and is in communication with the acoustic wave confinement layer.
10. The thin film bulk acoustic resonator of claim 9, wherein at the boundary ring, the dielectric layer further comprises a support bump;
at the supporting projections, the stack of the supporting projections and the protective layer is in contact with a side surface of the second electrode layer facing the first electrode layer.
11. The thin film bulk acoustic resonator of claim 8, wherein when the upper electrode comprises the first electrode layer and the second electrode layer, the boundary ring is located between the first electrode layer and the second electrode layer, and the boundary ring is in contact isolation from the acoustic wave confining layer by the first electrode layer and the second electrode layer;
alternatively, when the upper electrode includes the first electrode layer and the second electrode layer, the boundary ring is located between the upper electrode and the piezoelectric layer.
12. The thin film bulk acoustic resonator of claim 1, wherein the protective layer is a conductive protective layer.
13. The thin film bulk acoustic resonator of claim 1, wherein a contact area of the acoustic wave confining layer with the first electrode layer is located in a stack of the dielectric layer and the protective layer towards an edge area of at least one side contact interface of the first electrode layer and the second electrode layer.
14. The thin film bulk acoustic resonator of claim 1, wherein the dielectric layer comprises a plurality of bosses, at least some of the bosses being the same size; alternatively, at least a portion of the plurality of bosses are sized differently than the remaining bosses;
and, at least part of the adjacent two protruding parts in the plurality of protruding parts have the same interval; alternatively, the spacing between at least some adjacent two of the plurality of lobes is different from the spacing between the remaining adjacent two lobes.
15. The thin film bulk acoustic resonator according to claim 14, characterized in that at the convex portion, the lamination of the convex portion and the protective layer is in contact with a side surface of the second electrode layer facing the first electrode layer.
16. The thin film bulk acoustic resonator of claim 1, wherein at the acoustic wave confining layer, the second electrode layer has an arch shape protruding toward a side thereof facing away from the first electrode layer.
17. The thin film bulk acoustic resonator of claim 1, further comprising: and the auxiliary layer comprises an auxiliary medium layer close to one side of the protective layer and an auxiliary protective layer far away from one side of the protective layer.
18. A method for manufacturing a thin film bulk acoustic resonator according to any one of claims 1 to 17, the method comprising:
providing a substrate;
sequentially superposing a lower electrode, a piezoelectric layer and an upper electrode on one side of the substrate in the thickness direction; wherein at least one of the upper electrode and the lower electrode includes a first electrode layer and a second electrode layer superimposed in the thickness direction, and the first electrode layer is located on an electrical side close to the piezoelectric layer; the electrode comprises a first electrode layer, a second electrode layer, a dielectric layer, a protective layer and a protective layer, wherein the first electrode layer and the second electrode layer are arranged between the dielectric layer and the dielectric layer; wherein the sound wave limiting layer is contacted with part of the first electrode layer through the lamination of the dielectric layer and the protective layer.
19. An electronic device comprising the thin film bulk acoustic resonator of any one of claims 1-17.
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| CN117013985A (en) * | 2022-04-29 | 2023-11-07 | 锐石创芯(重庆)科技有限公司 | Filter, multiplexer, radio frequency front end module and preparation method of filter |
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| CN117013985A (en) * | 2022-04-29 | 2023-11-07 | 锐石创芯(重庆)科技有限公司 | Filter, multiplexer, radio frequency front end module and preparation method of filter |
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