CN117277986A - Bulk acoustic wave resonator integrated with capacitor and preparation method thereof - Google Patents
Bulk acoustic wave resonator integrated with capacitor and preparation method thereof Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title abstract description 8
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- 229910000679 solder Inorganic materials 0.000 claims description 10
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/25—Constructional features of resonators using surface acoustic waves
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/58—Structural electrical arrangements for semiconductor devices not otherwise provided for, e.g. in combination with batteries
- H01L23/64—Impedance arrangements
- H01L23/642—Capacitive arrangements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/704—Piezoelectric or electrostrictive devices based on piezoelectric or electrostrictive films or coatings
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
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- Acoustics & Sound (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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Abstract
The invention provides a bulk acoustic wave resonator integrating a capacitor and a preparation method thereof, wherein the bulk acoustic wave resonator comprises the following components: the device comprises a bulk acoustic wave resonator carrier, a piezoelectric layer, a bulk acoustic wave resonator cover body, a first electrode layer, a second electrode layer, a capacitance medium layer and a capacitance electrode unit; the first electrode layer, the piezoelectric layer and the second electrode layer form an effective resonance area, and the second electrode layer, the capacitance medium layer and the capacitance electrode unit form a capacitance; the bulk acoustic wave resonator and the capacitor are integrated on the same wafer, and the effective resonance area and the capacitor share one second electrode layer for electric signal connection, so that the area of the filter is not increased due to the fact that the capacitor is additionally increased; in addition, the bulk acoustic wave resonator integrating the capacitor can realize the change of the capacitance value in the whole circuit through the serial-parallel capacitance of the bulk acoustic wave resonator, so that the parallel resonance frequency and the serial resonance frequency of the bulk acoustic wave resonator are changed, and the effective electromechanical coupling coefficient of the bulk acoustic wave resonator can be flexibly adjusted.
Description
Technical Field
The invention relates to the technical field of bulk acoustic wave resonators, in particular to a bulk acoustic wave resonator integrated with a capacitor and a preparation method thereof.
Background
The fifth generation cellular technology (5G) can improve the speed, reduce delay and enhance flexibility for wireless service, and the 5G communication technology is an important research topic in the current technological industry; along with the continuous expansion and the increasing density of communication frequency bands, great crosstalk can be generated between adjacent frequency bands, and the filter needs to be rapidly attenuated in the adjacent frequency bands while meeting the passband performance, so that the effect of inhibiting the signals of the adjacent frequency bands is achieved.
Bulk acoustic wave resonators are widely used in high frequency filters because of their effective electromechanical coupling coefficient (k 2 eff ) Determines the bandwidth of the high-frequency filter and the roll-off of the passband edge by reducing the effective electromechanical coupling coefficient (k 2 eff ) The rapid attenuation of the high-frequency filter at the edge of the passband can be realized; reducing the effective electromechanical coupling coefficient (k 2 eff ) The method includes connecting the bulk acoustic wave resonator in series or parallel with a capacitor, but this method will add additional capacitance and thus increase the area of the high frequency filter.
Therefore, how to develop a method capable of reducing the effective electromechanical coupling coefficient (k 2 eff ) The method without increasing the filter area is a technical problem to be solved by the person skilled in the art.
Disclosure of Invention
In view of the above, the present invention provides a bulk acoustic wave resonator with integrated capacitance and a method for manufacturing the same, which comprises the following steps:
a bulk acoustic wave resonator integrating capacitance, the bulk acoustic wave resonator comprising:
a bulk acoustic wave resonator carrier;
the piezoelectric layer and the bulk acoustic wave resonator cover body are sequentially positioned on one side of the bulk acoustic wave resonator carrier in a first direction, wherein the first direction is perpendicular to the plane of the bulk acoustic wave resonator carrier and the bulk acoustic wave resonator carrier points to the piezoelectric layer;
the first electrode layer is positioned on one side of the piezoelectric layer facing the bulk acoustic wave resonator cover body, and exposes a first area of a first surface of the piezoelectric layer, wherein the first surface is the surface of the piezoelectric layer facing one side of the bulk acoustic wave resonator cover body;
a second electrode layer located on one side of the piezoelectric layer facing the bulk acoustic wave resonator carrier, the second electrode layer exposing a second region of a second surface of the piezoelectric layer, the second surface being a surface of the piezoelectric layer facing one side of the bulk acoustic wave resonator carrier, in the first direction, there being no overlap between an orthographic projection of the first region on the bulk acoustic wave resonator carrier and an orthographic projection of the second region on the bulk acoustic wave resonator carrier;
The capacitive medium layer is positioned at one side of the second electrode layer away from the piezoelectric layer;
and the at least one capacitance electrode unit is positioned on one side of the capacitance dielectric layer, which is away from the second electrode layer, wherein the second electrode layer, the capacitance dielectric layer and the capacitance electrode unit form a capacitance.
Preferably, in the bulk acoustic wave resonator of integrated capacitance, the bulk acoustic wave resonator carrier includes:
a first substrate positioned on one side of the piezoelectric layer away from the bulk acoustic wave resonator cover body;
a first bonding layer located on a side of the first substrate facing the piezoelectric layer, the first bonding layer having a first bump and a second bump;
a cut-off boundary layer located on a side of the first bonding layer facing away from the first substrate;
in the first direction, the height of the first bulge is larger than that of the second bulge, the first bulge covered with the cut-off boundary layer is connected with the second area of the piezoelectric layer, and the second bulge covered with the cut-off boundary layer is connected with the capacitance medium layer.
Preferably, in the bulk acoustic wave resonator of the integrated capacitor, a first groove is formed between the first protrusion and the second protrusion;
In the first direction, an orthographic projection of the first recess on the first substrate covers an orthographic projection of a portion of the second electrode layer on the first substrate, and an orthographic projection of a second region of the cover portion of the piezoelectric layer on the first substrate.
Preferably, in the above-described bulk acoustic wave resonator integrating capacitance, the second electrode layer includes a third region located between the first bump and the second bump;
the edge area of the third area is of a step structure.
Preferably, in the bulk acoustic wave resonator of integrated capacitance, the bulk acoustic wave resonator carrier further includes: a sacrificial layer;
a part of the sacrificial layer is positioned on one side of the first bulge away from the second bulge and is positioned between the piezoelectric layer and the cut-off boundary layer;
and part of the sacrificial layer is positioned on one side of the second bulge away from the first bulge and is positioned between the capacitance medium layer and the cut-off boundary layer.
Preferably, in the bulk acoustic wave resonator of integrated capacitance, the bulk acoustic wave resonator cover includes:
the first electrode layer is positioned between the piezoelectric layer and the second bonding layer;
The second bonding layer is provided with a second groove, the second groove penetrates through the second bonding layer in the first direction, a part of the surface of the first electrode layer facing the cover plate side is exposed, and a part of the first area of the piezoelectric layer is exposed.
Preferably, in the bulk acoustic wave resonator of integrated capacitance, the bulk acoustic wave resonator further includes:
a passivation layer located on a side of the first electrode layer facing the second bonding layer;
the passivation layer is provided with a third groove, the third groove penetrates through the passivation layer in the first direction, and a part of the first electrode layer is exposed;
the first region of the piezoelectric layer is provided with a fourth groove, and the fourth groove penetrates through the piezoelectric layer in the first direction to expose part of the second electrode layer;
the first conducting layer is positioned in the third groove and is connected with the first electrode layer through the third groove;
and the second conducting layer is positioned in the fourth groove and is connected with the second electrode layer through the fourth groove.
Preferably, in the bulk acoustic wave resonator of integrated capacitance, the bulk acoustic wave resonator cover further includes:
A first via penetrating the cap plate and the second bonding layer in the first direction, the first via exposing a portion of the first conductive layer;
a first metal layer covering the sidewall of the first via hole and covering the surface of the first conductive layer exposed by the first via hole;
a first metal filling layer filling at least the first through hole, the first metal layer being located between the first metal filling layer and a sidewall of the first through hole;
and the first solder balls are positioned on one side of the first metal filling layer, which is away from the first conducting layer.
Preferably, in the bulk acoustic wave resonator of integrated capacitance, the bulk acoustic wave resonator cover further includes:
a second through hole penetrating through the cover plate and the second bonding layer in the first direction, wherein a part of the second conducting layer is exposed by the second through hole;
the second metal layer covers the side wall of the second through hole and covers the surface of the second conducting layer exposed by the second through hole;
a second metal filling layer filling at least the second through hole, the second metal layer being located between the second metal filling layer and a sidewall of the second through hole;
And the second solder balls are positioned on one side of the second metal filling layer, which is away from the second conducting layer.
The embodiment of the invention also provides a preparation method of the bulk acoustic wave resonator with integrated capacitance, which is used for preparing the bulk acoustic wave resonator with integrated capacitance, and comprises the following steps:
providing a bulk acoustic wave resonator carrier;
forming a piezoelectric layer and a bulk acoustic wave resonator cover body on one side of the bulk acoustic wave resonator carrier in sequence in a first direction, wherein the first direction is perpendicular to a plane where the bulk acoustic wave resonator carrier is located, and the bulk acoustic wave resonator carrier points to the piezoelectric layer;
forming a first electrode layer on one side of the piezoelectric layer facing the bulk acoustic wave resonator cover body, wherein the first electrode layer exposes a first area of a first surface of the piezoelectric layer, and the first surface is the surface of the piezoelectric layer facing one side of the bulk acoustic wave resonator cover body;
forming a second electrode layer on one side of the piezoelectric layer facing the bulk acoustic wave resonator carrier, wherein the second electrode layer exposes a second area of a second surface of the piezoelectric layer, the second surface is a surface of one side of the piezoelectric layer facing the bulk acoustic wave resonator carrier, and in the first direction, the orthographic projection of the first area on the bulk acoustic wave resonator carrier and the orthographic projection of the second area on the bulk acoustic wave resonator carrier are not overlapped;
Forming a capacitance medium layer on one side of the second electrode layer, which is away from the piezoelectric layer;
and forming at least one capacitance electrode unit on one side of the capacitance dielectric layer, which is away from the second electrode layer, wherein the second electrode layer, the capacitance dielectric layer and the capacitance electrode unit form a capacitance.
Compared with the prior art, the invention has the following beneficial effects:
the invention provides a bulk acoustic wave resonator integrating a capacitor and a preparation method thereof, wherein the bulk acoustic wave resonator comprises the following components: a bulk acoustic wave resonator carrier; the piezoelectric layer and the bulk acoustic wave resonator cover body are sequentially positioned on one side of the bulk acoustic wave resonator carrier in the first direction; the piezoelectric resonator comprises a piezoelectric layer, a first electrode layer, a second electrode layer, a capacitance medium layer and at least one capacitance electrode unit, wherein the piezoelectric layer faces to the cover body of the bulk acoustic wave resonator; the first electrode layer, the piezoelectric layer and the second electrode layer in the bulk acoustic wave resonator form an effective resonance area, and the second electrode layer, the capacitance medium layer and the capacitance electrode unit form a capacitance; compared with the series-parallel connection of a discrete resonator and a capacitor, the invention does not increase the area of a filter due to the additional capacitance, and the effective resonance area and the capacitor share a second electrode layer for electric signal connection, thereby omitting the lead wire of a capacitor electrode unit and reducing the area of the filter; in addition, the bulk acoustic wave resonator integrated with the capacitor is equivalent to the series connection or parallel connection of the bulk acoustic wave resonator and the capacitor, and the bulk acoustic wave resonator can realize the change of the value of the capacitor in the whole circuit through the series-parallel connection capacitor, so that the parallel resonance frequency and the series resonance frequency of the bulk acoustic wave resonator are changed, and the effective electromechanical coupling coefficient of the bulk acoustic wave resonator can be flexibly adjusted.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings that are required to be used in the embodiments or the description of the prior art will be briefly described below, and it is obvious that the drawings in the following description are only embodiments of the present invention, and that other drawings can be obtained according to the provided drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of a bulk acoustic wave resonator with integrated capacitance according to an embodiment of the present invention;
fig. 2 is a schematic circuit diagram of a bulk acoustic wave resonator and a capacitor connected in series according to an embodiment of the present invention;
FIG. 3 is a graph showing the characteristics of a bulk acoustic wave resonator before and after a series capacitance of the bulk acoustic wave resonator according to an embodiment of the present invention;
fig. 4 is a schematic circuit diagram of a bulk acoustic wave resonator and a capacitor connected in parallel according to an embodiment of the present invention;
FIG. 5 is a graph showing the characteristics of a bulk acoustic wave resonator before and after a parallel capacitor of the bulk acoustic wave resonator according to an embodiment of the present invention;
fig. 6 is a schematic circuit diagram of a plurality of bulk acoustic wave resonators connected in parallel with a plurality of capacitors according to an embodiment of the present invention;
FIG. 7 is a diagram showing a comparison of filter characteristics before and after a plurality of bulk acoustic wave resonators are connected in parallel with a plurality of capacitors according to an embodiment of the present invention;
Fig. 8 is a schematic flow chart of a method for manufacturing a bulk acoustic wave resonator with integrated capacitor according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a second electrode layer formed according to an embodiment of the present invention;
fig. 10 is a schematic structural diagram of a capacitor electrode unit according to an embodiment of the present invention;
FIG. 11 is a schematic diagram of a structure after forming a sacrificial layer according to an embodiment of the present invention;
FIG. 12 is a schematic view of a structure after forming a boundary layer according to an embodiment of the present invention;
fig. 13 is a schematic structural diagram of a first substrate according to an embodiment of the present invention;
fig. 14 is a schematic structural diagram of a sixth groove according to an embodiment of the present invention;
fig. 15 is a schematic structural diagram of a first conductive layer and a second conductive layer after forming according to an embodiment of the present invention;
fig. 16 is a schematic structural diagram of a cover plate according to an embodiment of the present invention.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Based on the background, the inventors found in the inventive process of the present invention that, due to the effective electromechanical coupling coefficient (k 2 eff ) Determines the bandwidth of the high-frequency filter and the roll-off of the passband edge by reducing the effective electromechanical coupling coefficient (k 2 eff ) The rapid attenuation of the high-frequency filter at the edge of the passband can be realized; while the reduction of the effective electromechanical coupling coefficient (k 2 eff ) The method of (a) includes connecting a bulk acoustic wave resonator in series or parallel with a capacitor, but this method increases the capacitor additionally and thus the area of the high frequency filter, and thus, how to develop a method of reducing the effective electromechanical coupling coefficient (k 2 eff ) The method without increasing the filter area is a technical problem to be solved by the person skilled in the art.
Based on the above, the application provides a bulk acoustic wave resonator integrating capacitance and a preparation method thereof, which can reduce the effective electromechanical coupling coefficient (k 2 eff ) Without increasing the area of the high frequency filter.
In order that the above-recited objects, features and advantages of the present invention will become more readily apparent, a more particular description of the invention will be rendered by reference to the appended drawings and appended detailed description.
An embodiment of the present invention provides a bulk acoustic wave resonator with integrated capacitance, and referring to fig. 1, fig. 1 is a schematic structural diagram of a bulk acoustic wave resonator with integrated capacitance provided in an embodiment of the present invention, and in combination with fig. 1, the bulk acoustic wave resonator includes:
a bulk acoustic wave resonator carrier 1; the piezoelectric layer 2 and the bulk acoustic wave resonator cover 3 are sequentially positioned on one side of the bulk acoustic wave resonator carrier 1 in a first direction A, wherein the first direction A is perpendicular to the plane of the bulk acoustic wave resonator carrier 1 and is directed to the piezoelectric layer 2 by the bulk acoustic wave resonator carrier 1.
The first electrode layer 4 is located on the side of the piezoelectric layer 2 facing the bulk acoustic wave resonator cover 3, and the first electrode layer 4 exposes a first area of a first surface of the piezoelectric layer 2, where the first surface is the surface of the piezoelectric layer 2 facing the bulk acoustic wave resonator cover 3.
And a second electrode layer 5 positioned on the side of the piezoelectric layer 2 facing the bulk acoustic wave resonator carrier 1, wherein the second electrode layer 5 exposes a second area of a second surface of the piezoelectric layer 2, the second surface being a surface of the piezoelectric layer 2 facing the bulk acoustic wave resonator carrier 1, and in the first direction a, an orthographic projection of the first area on the bulk acoustic wave resonator carrier 1 and an orthographic projection of the second area on the bulk acoustic wave resonator carrier 1 do not overlap.
A capacitive dielectric layer 6 positioned on the side of the second electrode layer 5 facing away from the piezoelectric layer 2; at least one capacitive electrode unit 7 located on the side of the capacitive dielectric layer 6 facing away from the second electrode layer 5, wherein the second electrode layer 5, the capacitive dielectric layer 6 and the capacitive electrode unit 7 form a capacitance 8.
Specifically, in the embodiment of the present invention, the front projections of the first electrode layer 4 and the second electrode layer 5 on the piezoelectric layer 2 overlap; the capacitor dielectric layer 6 can be used as a dielectric layer of the capacitor 8 and can also protect the second electrode layer 5 from oxidization; the capacitor electrode units 7 may be capacitor electrode units 7 in the form of film layers, where the capacitor electrode units 7 include, but are not limited to, one capacitor electrode unit 7 as shown in fig. 1, and may also be a plurality of capacitor electrode units 7, where the plurality of capacitor electrode units 7 are all distributed at intervals on a side of the capacitor dielectric layer 6 away from the second electrode layer 5, and as indicated by the dashed line frame 8 in fig. 1, each capacitor electrode unit 7, the capacitor dielectric layer 6 corresponding to each capacitor electrode unit 7, and the second electrode layer 5 corresponding to each capacitor electrode unit 7 together form a capacitor 8.
As can be seen from the above description, the embodiment of the present invention provides a bulk acoustic wave resonator with integrated capacitance, including: a bulk acoustic wave resonator carrier 1; a piezoelectric layer 2 and a bulk acoustic wave resonator cover 3 which are positioned on one side of the bulk acoustic wave resonator carrier 1 in sequence in a first direction a; a first electrode layer 4 on the side of the piezoelectric layer 2 facing the bulk acoustic wave resonator cover 3, a second electrode layer 5 on the side of the piezoelectric layer 2 facing the bulk acoustic wave resonator carrier 1, a capacitive dielectric layer 6 on the side of the second electrode layer 5 facing away from the piezoelectric layer 2, and at least one capacitive electrode unit 7 on the side of the capacitive dielectric layer 6 facing away from the second electrode layer 5; wherein the first electrode layer 4, the piezoelectric layer 2 and the second electrode layer 5 in the bulk acoustic wave resonator form an effective resonance area, and the second electrode layer 5, the capacitance medium layer 6 and the capacitance electrode unit 7 form a capacitance 8; compared with the mode that a discrete resonator and a capacitor 8 are connected in series and parallel, the embodiment of the invention does not increase the area of the filter due to the fact that the capacitor 8 is additionally added, and because the effective resonance area and the capacitor 8 share the second electrode layer 5 for electric signal connection, the lead wire of the capacitor electrode unit 7 is omitted, and the area of the filter can be reduced; in addition, the bulk acoustic wave resonator integrated with the capacitor is equivalent to the series connection or parallel connection of the bulk acoustic wave resonator and the capacitor 8, and the bulk acoustic wave resonator can realize the change of the capacitance value in the whole circuit through the series-parallel connection capacitor 8, so that the parallel resonance frequency and the series resonance frequency of the bulk acoustic wave resonator are changed, and the effective electromechanical coupling coefficient of the bulk acoustic wave resonator can be flexibly adjusted.
Alternatively, in another embodiment of the present invention, referring to fig. 1, the bulk acoustic wave resonator carrier 1 includes: a first substrate 9 positioned on a side of the piezoelectric layer 2 facing away from the bulk acoustic wave resonator cover 3; a first bonding layer 10 located on a side of the first substrate 9 facing the piezoelectric layer 2, the first bonding layer 10 having a first bump 10a and a second bump 10b; a cut-off boundary layer 11 on the side of the first bonding layer 10 facing away from the first substrate 9; in the first direction a, the height of the first protrusion 10a is greater than the height of the second protrusion 10b, the first protrusion 10a covered with the cut-off boundary layer 11 is connected to the second region of the piezoelectric layer 2, and the second protrusion 10b covered with the cut-off boundary layer 11 is connected to the capacitive dielectric layer 6.
A first groove 12 is arranged between the first protrusion 10a and the second protrusion 10b; in the first direction a, the orthographic projection of the first recess 12 onto the first substrate 9 covers part of the orthographic projection of the second electrode layer 5 onto the first substrate 9, and covers part of the orthographic projection of the second region of the piezoelectric layer 2 onto the first substrate 9.
The second electrode layer 5 includes a third region between the first protrusion 10a and the second protrusion 10b; the edge area of the third area is a step structure 13.
Specifically, in the embodiment of the present invention, the first groove 12 is a first resonant cavity, and the first resonant cavity is formed by combining the first protrusion 10a, the second protrusion 10b, the piezoelectric layer 2, the second electrode layer 5, and the capacitive medium layer 6; a part of the second electrode layer 5 covered by the orthographic projection of the first groove 12 on the first substrate 9 is a third area, and a part of the third area close to the first protrusion 10a and a part of the third area close to the second protrusion 10b are step structures 13, that is, in the first direction a, orthographic projections of the first groove 12 on the first substrate 9 completely cover orthographic projections of the step structures 13 on the first substrate 9; the first resonant cavity includes the boundary of the second electrode layer 5 and the step structure 13 to form a boundary condition of sound wave reflection, so that the first resonant cavity can vibrate better, and the performance of the bulk acoustic wave resonator is improved; in addition, the side of the second electrode layer 5 facing the cut-off boundary layer 11 is provided with a capacitance dielectric layer 6, and the capacitance electrode unit 7 may be located on the side of the capacitance dielectric layer 6 in the first resonant cavity, which is away from the second electrode layer 5, and may also be located on the side of the capacitance dielectric layer 6 outside the first resonant cavity, which is away from the second electrode layer 5.
The bulk acoustic wave resonator carrier 1 further comprises: a sacrificial layer 14; a part of the sacrificial layer 14 is located on a side of the first protrusion 10a away from the second protrusion 10b and between the piezoelectric layer 2 and the cut-off boundary layer 11; a part of the sacrificial layer 14 is positioned on one side of the second protrusion 10b away from the first protrusion 10a and is positioned between the capacitance medium layer 6 and the cut-off boundary layer 11; the capacitive electrode unit 7 is located between the sacrificial layer 14 and the capacitive dielectric layer 6.
Alternatively, in another embodiment of the present invention, referring to fig. 1, the bulk acoustic wave resonator cover 3 includes: a second bonding layer 15 and a cover plate 16, which are positioned in sequence on the side of the piezoelectric layer 2 facing away from the bulk acoustic wave resonator carrier 1 in the first direction a, the first electrode layer 4 being positioned between the piezoelectric layer 2 and the second bonding layer 15; the second bonding layer 15 has a second groove 17, and the second groove 17 penetrates the second bonding layer 15 in the first direction a to expose a portion of the surface of the first electrode layer 4 facing the cover plate 16, and a portion of the first region of the piezoelectric layer 2.
Specifically, in the embodiment of the present invention, the second groove 17 is a second resonant cavity, and the second resonant cavity is formed by combining the cover plate 16, the second bonding layer 15, the first electrode layer 4 and the piezoelectric layer 2; the second resonant cavity includes the boundary of the first electrode layer 4 to form a boundary condition of sound wave reflection, so that the second resonant cavity can vibrate better, and the performance of the bulk acoustic wave resonator is improved.
The bulk acoustic wave resonator further includes: a passivation layer 18 on a side of the first electrode layer 4 facing the second bonding layer 15; the passivation layer 18 has a third recess penetrating the passivation layer 18 in the first direction a exposing a portion of the first electrode layer 4; a first conducting layer 19 located in the third groove, wherein the first conducting layer 19 is connected with the first electrode layer 4 through the third groove; a first region of the piezoelectric layer 2 has a fourth recess penetrating the piezoelectric layer 2 in the first direction a exposing a portion of the second electrode layer 5; and the second conducting layer 20 is positioned in the fourth groove, and the second conducting layer 20 is connected with the second electrode layer 5 through the fourth groove.
The bulk acoustic wave resonator cover 3 further includes: a first through hole penetrating the cover plate 16 and the second bonding layer 15 in the first direction a, the first through hole exposing a portion of the first conductive layer 19; a first metal layer 21, wherein the first metal layer 21 covers the side wall of the first through hole and covers the surface of the first conducting layer 19 exposed by the first through hole; a first metal filling layer 22, wherein the first metal filling layer 22 at least fills the first through hole, and the first metal layer 21 is positioned between the first metal filling layer 22 and the side wall of the first through hole; and the first solder balls 23 are positioned on the side of the first metal filling layer 22, which is away from the first conducting layer 19.
The bulk acoustic wave resonator cover 3 further includes: a second through hole penetrating the cover plate 16 and the second bonding layer 15 in the first direction a, the second through hole exposing a portion of the second conductive layer 20; a second metal layer 24, wherein the second metal layer 24 covers the sidewall of the second via hole and covers the surface of the second conductive layer 20 exposed by the second via hole; a second metal filling layer 25, wherein the second metal filling layer 25 at least fills the second through hole, and the second metal layer 24 is located between the second metal filling layer 25 and the side wall of the second through hole; and the second solder balls 26 are positioned on the side of the second metal filling layer 25, which is away from the second conducting layer 20.
Specifically, in the embodiment of the present invention, the bulk acoustic wave resonator structure with integrated capacitance may implement series connection of the capacitance 8 and the bulk acoustic wave resonator, and implement parallel connection of the capacitance 8 and the bulk acoustic wave resonator; fig. 2 is a schematic circuit diagram of series connection of a bulk acoustic wave resonator and a capacitor, fig. 3 is a characteristic comparison diagram of bulk acoustic wave resonators before and after series connection of capacitors of the bulk acoustic wave resonator, which is provided In the embodiment of the present invention, and fig. 2 is an example of series connection between two bulk acoustic wave resonator structures of integrated capacitors, wherein the structures of a first bulk acoustic wave resonator and a second bulk acoustic wave resonator are identical, the second electrode layer 5 of the first bulk acoustic wave resonator is connected to an In end In fig. 2, the second electrode layer 5 of the first bulk acoustic wave resonator is also connected to a capacitor electrode unit 7, the capacitor electrode unit 7 of the first bulk acoustic wave resonator is connected to the second capacitor electrode unit 7 of the second bulk acoustic wave resonator without connection by a lead wire, and the series connection between the bulk acoustic wave resonator and the capacitor 8 is realized by the second electrode layer 5 of the second bulk acoustic wave resonator, as shown In fig. 3, the series connection frequency of the bulk acoustic wave resonator after the series connection of the capacitor 8 is reduced, and the series-connection frequency is reduced due to the series-connection frequency and the effective coupling coefficient (k 2 eff ) Is positively correlated, the parallel resonant frequency is unchanged, so that the effective electromechanical coupling coefficient (k 2 eff ) A reduction; referring to fig. 4 and 5, fig. 4 is a schematic circuit diagram of parallel connection of a bulk acoustic wave resonator and a capacitor provided In an embodiment of the present invention, fig. 5 is a characteristic comparison diagram of the bulk acoustic wave resonator before and after parallel connection of the bulk acoustic wave resonator and the capacitor provided In the embodiment of the present invention, in which the parallel connection between two bulk acoustic wave resonator structures integrated with the capacitor is exemplified In the embodiment of the present invention, the structures of the first bulk acoustic wave resonator and the second bulk acoustic wave resonator are identical, the second electrode layer 5 of the first bulk acoustic wave resonator is connected to the In terminal In fig. 4, the second electrode layer 5 of the first bulk acoustic wave resonator is also connected to the first capacitor electrode unit 7, the first capacitor electrode unit 7 and the second capacitor electrode unit 7 of the second bulk acoustic wave resonator are connected without wire connection, and the first electrode layer 4 and the second electrode layer 5 of the second bulk acoustic wave resonator are connected through the piezoelectric layer 2The second conductive layer 20 in the fourth recess is connected to the ground through the first electrode layer 4 in the second bulk acoustic wave resonator to realize the parallel connection of the bulk acoustic wave resonator and the capacitor 8, as shown in fig. 5, it can be seen that the parallel resonance frequency decreases after the bulk acoustic wave resonator connects the capacitor 8 in parallel, due to the fact that the parallel resonance frequency is connected with the effective electromechanical coupling coefficient (k 2 eff ) Is positively correlated, the series resonant frequency is unchanged, so that the effective electromechanical coupling coefficient (k 2 eff ) A reduction; because the filter includes a plurality of bulk acoustic wave resonators and a plurality of capacitors 8, as shown in fig. 6, fig. 6 is a schematic circuit diagram of a plurality of parallel capacitors of a plurality of bulk acoustic wave resonators according to an embodiment of the present invention, and fig. 7 is a comparison diagram of filter characteristics before and after a plurality of parallel capacitors of a plurality of bulk acoustic wave resonators according to an embodiment of the present invention, based on the above principle, when a filter formed by a plurality of parallel capacitors 8 and a plurality of bulk acoustic wave resonators may exhibit the effect shown in fig. 7, the filter after parallel capacitors 8 in fig. 7 exhibits a fast roll-off on the right side of a passband, and high rejection is rapidly achieved at 2.6GHz without changing the passband performance.
Optionally, based on the foregoing embodiment of the present invention, in another embodiment of the present invention, there is further provided a method for manufacturing a bulk acoustic wave resonator with integrated capacitance, which is used for manufacturing the bulk acoustic wave resonator with the foregoing embodiment, with reference to fig. 8, fig. 8 is a schematic flow diagram of a method for manufacturing a bulk acoustic wave resonator with integrated capacitance, provided in the embodiment of the present invention, and with reference to fig. 8, the method includes:
S100: a second substrate 27 is provided, and a transition layer 28, a passivation layer 18, a first electrode layer 4, a piezoelectric layer 2 and a second electrode layer 5 are formed on the second substrate 27 in this order in a second direction B, wherein the second direction B is perpendicular to the plane of the second substrate 27 and is directed by the second substrate 27 to the transition layer 28.
Specifically, in the step S100, as shown in fig. 9, fig. 9 is a schematic structural diagram of a second electrode layer formed according to an embodiment of the present invention, which includes, but is not limited to, a portion where the second electrode layer 5 is etched by Reactive Ion Etching (RIE) or the likeForming a step structure 13 and a fifth groove 29, wherein the fifth groove 29 penetrates through the second electrode layer 5 in the second direction B to expose a second area of a second surface of the piezoelectric layer 2, and the second surface is a surface of one side of the piezoelectric layer 2 away from the first electrode layer 4; the material of the second substrate 27 includes, but is not limited to, silicon, glass, siC, gaAs, or the like; the material of the transition layer 28 includes, but is not limited to, silicon oxide or silicon nitride; the material of the passivation layer 18 includes, but is not limited to, aluminum nitride (AlN) or the like; the material of the first electrode layer 4 includes, but is not limited to, al, cu, mo, au, pt, or the like; the material of the piezoelectric layer 2 includes, but is not limited to, aluminum nitride (AlN), al x Sc 1-x N, lithium niobate (LiNbO) 3 ) Lithium tantalate (LiTaO) 3 ) Or quartz, etc., the material of the piezoelectric layer 2 may be polycrystalline or monocrystalline; the material of the second electrode layer 5 includes, but is not limited to, al, cu, mo, au, pt, or the like; the formation of the transition layer 28 includes, but is not limited to, thermal oxidation, physical Vapor Deposition (PVD), chemical Vapor Deposition (CVD), or the like; the passivation layer 18 is formed by magnetron sputtering; the forming of the first electrode layer 4 includes, but is not limited to, forming by Physical Vapor Deposition (PVD) or the like; the piezoelectric layer 2 is formed by Physical Vapor Deposition (PVD) or Metal Organic Chemical Vapor Deposition (MOCVD); the forming of the second electrode layer 5 includes, but is not limited to, forming by Physical Vapor Deposition (PVD) or the like.
S200: a capacitive dielectric layer 6 is formed on the side of the second electrode layer 5 facing away from the piezoelectric layer 2, and at least one capacitive electrode unit 7 is formed on the side of the capacitive dielectric layer 6 facing away from the second electrode layer 5.
Specifically, in the step S200, as shown in fig. 10, fig. 10 is a schematic structural diagram of a capacitor electrode unit formed according to an embodiment of the present invention, where the capacitor dielectric layer 6 covers a side of the second electrode layer 5 facing away from the piezoelectric layer 2, and the capacitor dielectric layer 6 also covers a surface of the step structure 13; in the embodiment of the present invention, a plurality of the capacitance electrode units 7 may also be provided; the material of the capacitance medium layer 6 includes, but is not limited to, silicon oxide, silicon nitride, aluminum nitride, etc.; the formation of the capacitance dielectric layer 6 includes, but is not limited to, physical Vapor Deposition (PVD) or Chemical Vapor Deposition (CVD); the material of the capacitive electrode unit 7 includes, but is not limited to, al, cu, mo, au, pt, or the like.
S300: a sacrificial layer 14 is formed, the sacrificial layer 14 covering a second area of the second surface of the piezoelectric layer 2 and covering the side of the capacitive dielectric layer 6 where the capacitive electrode unit 7 is provided.
Specifically, in this step S300, as shown in fig. 11, fig. 11 is a schematic structural diagram of a sacrificial layer formed according to an embodiment of the present invention, after the sacrificial layer 14 is formed, the embodiment of the present invention includes, but is not limited to, etching the sacrificial layer 14 by etching to form a third through hole 30 and a fourth through hole 31 penetrating the sacrificial layer 14 in the second direction B, where the third through hole 30 exposes a portion of the second area of the second surface of the piezoelectric layer 2, and the fourth through hole 31 exposes a portion of the capacitance medium layer 6; the material of the sacrificial layer 14 includes, but is not limited to, siO 2 PSG, USG, a-Si, photoresist, etc.
S400: a cut-off boundary layer 11 is formed on a side of the sacrificial layer 14 facing away from the piezoelectric layer 2, where the cut-off boundary layer 11 covers the side wall of the third through hole 30, a portion of the piezoelectric layer 2 exposed by the third through hole 30, a portion of the side wall of the fourth through hole 31, a portion of the capacitive medium layer 6 exposed by the fourth through hole 31, and a surface of the sacrificial layer 14 facing away from the side of the piezoelectric layer 2.
Specifically, in this step S400, as shown in fig. 12, fig. 12 is a schematic structural diagram of the embodiment of the present invention after forming a cut-off boundary layer, where the material of the cut-off boundary layer 11 includes, but is not limited to, siO 2 Or polysilicon (poly-Si), etc.; the cut-off boundary layer 11 and the sacrifice layer 14 are made of different materials; and the chemical used in etching the sacrificial layer 14 in step S300 does not damage the cut-off boundary layer 11.
S500: in the second direction B, a first bonding layer 10 and a first substrate 9 are formed in sequence on the side of the cut-off boundary layer 11 facing away from the sacrificial layer 14.
Specifically, in this step S500, as shown in fig. 13, fig. 13 is a schematic structural diagram of the first substrate after forming the first substrate, where the first bonding layer 10 at least fills the third through hole 30 and the fourth through hole 31, the first bonding layer 10 in the third through hole 30 forms a first bump 10a, and the first bonding layer 10 in the fourth through hole 31 forms a second bump 10b; the first substrate 9 is located on the side of the first bonding layer 10 facing away from the piezoelectric layer 2; the material of the first bonding layer 10 includes, but is not limited to, siO 2 Etc.
S600: the second substrate 27 and the transition layer 28 are removed, and the passivation layer 18 is processed to form the sixth groove 32, where the sixth groove 32 penetrates through the passivation layer 18 and the first electrode layer 4 in a first direction a, and exposes a first area of a first surface of the piezoelectric layer 2, where the first surface is a surface of a side of the piezoelectric layer 2 facing away from the second electrode layer 5, and the first direction a is perpendicular to a plane where the piezoelectric layer 2 is located and is directed by the piezoelectric layer 2 to the first electrode layer 4.
Specifically, in the step S600, as shown in fig. 14, fig. 14 is a schematic structural diagram of a sixth recess formed according to an embodiment of the present invention, by turning over a wafer, thinning and polishing away the second substrate 27 and the transition layer 28; in the first direction a, there is no overlap between the orthographic projection of the first region of the piezoelectric layer 2 on the first substrate 9 and the orthographic projection of the second region of the piezoelectric layer 2 on the first substrate 9; further, the embodiment of the present invention includes, but is not limited to, releasing the sacrificial layer 14 between the first bump 10a and the second bump 10b by liquid phase etching or vapor phase etching or the like, leaving the sacrificial layer 14 between the piezoelectric layer 2 and the cutoff boundary layer 11 on the side of the first bump 10a away from the second bump 10b, and leaving the sacrificial layer 14 between the capacitance medium layer 6 and the cutoff boundary layer 11 on the side of the second bump 10b away from the first bump 10 a; after releasing the sacrificial layer 14 between the first bump 10a and the second bump 10b, this part is the first recess 12 between the first bump 10a and the second bump 10b, i.e. the first resonant cavity of the bulk acoustic wave resonator.
S700: processing the passivation layer 18 to form a third groove, and forming a first conducting layer 19 in the third groove; the first region of the piezoelectric layer 2 is processed to form a fourth recess, and a second conductive layer 20 is formed in the fourth recess.
Specifically, in this step S700, as shown in fig. 15, fig. 15 is a schematic structural diagram of the first conductive layer and the second conductive layer after forming the first conductive layer, where the third groove penetrates through the passivation layer 18 in the first direction a to expose a portion of the first electrode layer 4, and the first conductive layer 19 is connected to the first electrode layer 4 through the third groove in this embodiment of the present invention; the fourth groove penetrates through the piezoelectric layer 2 in the first direction a to expose part of the second electrode layer 5, and the second conducting layer 20 is connected with the second electrode layer 5 through the fourth groove; the material of the first conductive layer 19 includes, but is not limited to, au, cu, al, or the like; the material of the second conductive layer 20 includes, but is not limited to, au, cu, al, or the like.
S800: a second bonding layer 15 is formed in the first direction a, and the second bonding layer 15 is processed to form a second recess 17, and a cover plate 16 is formed on a side of the second bonding layer 15 facing away from the piezoelectric layer 2.
Specifically, in this step S800, as shown in fig. 16, fig. 16 is a schematic structural diagram of a cover plate formed according to an embodiment of the present invention, where the second groove 17 penetrates the second bonding layer 15 in the first direction a, and exposes a portion of the surface of the passivation layer 18 on the side facing away from the first electrode layer 4, and a portion of the first region of the piezoelectric layer 2; forming a second resonant cavity of the bulk acoustic resonator by bonding a cover plate 16 on a side of the second bonding layer 15 facing away from the piezoelectric layer 2; the material of the second bonding layer 15 includes, but is not limited to, siO 2 Dry film materials of SiN or photoresist-like materials, and the like; embodiments of the invention include, but are not limited toThe second bonding layer 15 is formed by spin coating, and then the second bonding layer 15 is processed by photolithography to form the second groove 17.
S900: processing the cover plate 16 to form a first through hole and a second through hole; forming a first metal layer 21, a first metal filling layer 22 and a first solder ball 23 in the first through hole; a second metal layer 24, a second metal filling layer 25 and a second solder ball 26 are formed in the second via.
Specifically, in this step S900, as shown in fig. 1, the first through hole penetrates the cover plate 16 and the second bonding layer 15 in the first direction a, exposing a portion of the first conductive layer 19; the second through hole penetrates through the cover plate 16 and the second bonding layer 15 in the first direction a, and exposes a portion of the second conductive layer 20; the first metal layer 21 covers the sidewall of the first via hole and covers the surface of the first conductive layer 19 exposed by the first via hole; the first metal filling layer 22 at least fills the first through hole, and the first metal layer 21 is located between the first metal filling layer 22 and the side wall of the first through hole; the first solder balls 23 are located on the side of the first metal filling layer 22 facing away from the first conducting layer 19; the second metal layer 24 covers the sidewall of the second via hole and covers the surface of the second conductive layer 20 exposed by the second via hole; the second metal filling layer 25 at least fills the second through hole, and the second metal layer 24 is located between the second metal filling layer 25 and the sidewall of the second through hole; the second solder balls 26 are located on a side of the second metal filling layer 25 facing away from the second conductive layer 20.
The bulk acoustic wave resonator with integrated capacitor and the preparation method thereof provided by the invention are described in detail, and specific examples are applied to illustrate the principles and the implementation modes of the invention, and the description of the examples is only used for helping to understand the method and the core idea of the invention; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present invention, the present description should not be construed as limiting the present invention in view of the above.
It should be noted that, in the present specification, each embodiment is described in a progressive manner, and each embodiment is mainly described as different from other embodiments, and identical and similar parts between the embodiments are all enough to be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant points refer to the description of the method section.
It is further noted that relational terms such as first and second, and the like are used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Moreover, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include, or is intended to include, elements inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A bulk acoustic wave resonator integrating capacitance, the bulk acoustic wave resonator comprising:
a bulk acoustic wave resonator carrier;
the piezoelectric layer and the bulk acoustic wave resonator cover body are sequentially positioned on one side of the bulk acoustic wave resonator carrier in a first direction, wherein the first direction is perpendicular to the plane of the bulk acoustic wave resonator carrier and the bulk acoustic wave resonator carrier points to the piezoelectric layer;
the first electrode layer is positioned on one side of the piezoelectric layer facing the bulk acoustic wave resonator cover body, and exposes a first area of a first surface of the piezoelectric layer, wherein the first surface is the surface of the piezoelectric layer facing one side of the bulk acoustic wave resonator cover body;
A second electrode layer located on one side of the piezoelectric layer facing the bulk acoustic wave resonator carrier, the second electrode layer exposing a second region of a second surface of the piezoelectric layer, the second surface being a surface of the piezoelectric layer facing one side of the bulk acoustic wave resonator carrier, in the first direction, there being no overlap between an orthographic projection of the first region on the bulk acoustic wave resonator carrier and an orthographic projection of the second region on the bulk acoustic wave resonator carrier;
the capacitive medium layer is positioned at one side of the second electrode layer away from the piezoelectric layer;
and the at least one capacitance electrode unit is positioned on one side of the capacitance dielectric layer, which is away from the second electrode layer, wherein the second electrode layer, the capacitance dielectric layer and the capacitance electrode unit form a capacitance.
2. The bulk acoustic wave resonator according to claim 1, characterized in that the bulk acoustic wave resonator carrier comprises:
a first substrate positioned on one side of the piezoelectric layer away from the bulk acoustic wave resonator cover body;
a first bonding layer located on a side of the first substrate facing the piezoelectric layer, the first bonding layer having a first bump and a second bump;
a cut-off boundary layer located on a side of the first bonding layer facing away from the first substrate;
In the first direction, the height of the first bulge is larger than that of the second bulge, the first bulge covered with the cut-off boundary layer is connected with the second area of the piezoelectric layer, and the second bulge covered with the cut-off boundary layer is connected with the capacitance medium layer.
3. The bulk acoustic wave resonator of claim 2, wherein the first protrusion and the second protrusion have a first groove therebetween;
in the first direction, an orthographic projection of the first recess on the first substrate covers an orthographic projection of a portion of the second electrode layer on the first substrate, and an orthographic projection of a second region of the cover portion of the piezoelectric layer on the first substrate.
4. A bulk acoustic wave resonator according to claim 3, characterized in that the second electrode layer comprises a third region between the first and second protrusions;
the edge area of the third area is of a step structure.
5. The bulk acoustic wave resonator according to claim 2, characterized in that the bulk acoustic wave resonator carrier further comprises: a sacrificial layer;
a part of the sacrificial layer is positioned on one side of the first bulge away from the second bulge and is positioned between the piezoelectric layer and the cut-off boundary layer;
And part of the sacrificial layer is positioned on one side of the second bulge away from the first bulge and is positioned between the capacitance medium layer and the cut-off boundary layer.
6. The bulk acoustic wave resonator according to claim 1, characterized in that the bulk acoustic wave resonator cover comprises:
the first electrode layer is positioned between the piezoelectric layer and the second bonding layer;
the second bonding layer is provided with a second groove, the second groove penetrates through the second bonding layer in the first direction, a part of the surface of the first electrode layer facing the cover plate side is exposed, and a part of the first area of the piezoelectric layer is exposed.
7. The bulk acoustic wave resonator of claim 6, further comprising:
a passivation layer located on a side of the first electrode layer facing the second bonding layer;
the passivation layer is provided with a third groove, the third groove penetrates through the passivation layer in the first direction, and a part of the first electrode layer is exposed;
the first region of the piezoelectric layer is provided with a fourth groove, and the fourth groove penetrates through the piezoelectric layer in the first direction to expose part of the second electrode layer;
The first conducting layer is positioned in the third groove and is connected with the first electrode layer through the third groove;
and the second conducting layer is positioned in the fourth groove and is connected with the second electrode layer through the fourth groove.
8. The bulk acoustic wave resonator of claim 7, wherein the bulk acoustic wave resonator cover further comprises:
a first via penetrating the cap plate and the second bonding layer in the first direction, the first via exposing a portion of the first conductive layer;
a first metal layer covering the sidewall of the first via hole and covering the surface of the first conductive layer exposed by the first via hole;
a first metal filling layer filling at least the first through hole, the first metal layer being located between the first metal filling layer and a sidewall of the first through hole;
and the first solder balls are positioned on one side of the first metal filling layer, which is away from the first conducting layer.
9. The bulk acoustic wave resonator of claim 7, wherein the bulk acoustic wave resonator cover further comprises:
A second through hole penetrating through the cover plate and the second bonding layer in the first direction, wherein a part of the second conducting layer is exposed by the second through hole;
the second metal layer covers the side wall of the second through hole and covers the surface of the second conducting layer exposed by the second through hole;
a second metal filling layer filling at least the second through hole, the second metal layer being located between the second metal filling layer and a sidewall of the second through hole;
and the second solder balls are positioned on one side of the second metal filling layer, which is away from the second conducting layer.
10. A method of manufacturing a bulk acoustic wave resonator of integrated capacitance, for manufacturing a bulk acoustic wave resonator according to any of the preceding claims 1-9, characterized in that the method of manufacturing comprises:
providing a bulk acoustic wave resonator carrier;
forming a piezoelectric layer and a bulk acoustic wave resonator cover body on one side of the bulk acoustic wave resonator carrier in sequence in a first direction, wherein the first direction is perpendicular to a plane where the bulk acoustic wave resonator carrier is located, and the bulk acoustic wave resonator carrier points to the piezoelectric layer;
Forming a first electrode layer on one side of the piezoelectric layer facing the bulk acoustic wave resonator cover body, wherein the first electrode layer exposes a first area of a first surface of the piezoelectric layer, and the first surface is the surface of the piezoelectric layer facing one side of the bulk acoustic wave resonator cover body;
forming a second electrode layer on one side of the piezoelectric layer facing the bulk acoustic wave resonator carrier, wherein the second electrode layer exposes a second area of a second surface of the piezoelectric layer, the second surface is a surface of one side of the piezoelectric layer facing the bulk acoustic wave resonator carrier, and in the first direction, the orthographic projection of the first area on the bulk acoustic wave resonator carrier and the orthographic projection of the second area on the bulk acoustic wave resonator carrier are not overlapped;
forming a capacitance medium layer on one side of the second electrode layer, which is away from the piezoelectric layer;
and forming at least one capacitance electrode unit on one side of the capacitance dielectric layer, which is away from the second electrode layer, wherein the second electrode layer, the capacitance dielectric layer and the capacitance electrode unit form a capacitance.
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| CN117478098A (en) * | 2023-12-28 | 2024-01-30 | 深圳新声半导体有限公司 | Lamb wave resonator |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN117478098A (en) * | 2023-12-28 | 2024-01-30 | 深圳新声半导体有限公司 | Lamb wave resonator |
| CN117478098B (en) * | 2023-12-28 | 2024-04-02 | 深圳新声半导体有限公司 | Lamb wave resonator |
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