CN1138635A - Method and appts. for low temp plating diamond thin film - Google Patents
Method and appts. for low temp plating diamond thin film Download PDFInfo
- Publication number
- CN1138635A CN1138635A CN 95111077 CN95111077A CN1138635A CN 1138635 A CN1138635 A CN 1138635A CN 95111077 CN95111077 CN 95111077 CN 95111077 A CN95111077 A CN 95111077A CN 1138635 A CN1138635 A CN 1138635A
- Authority
- CN
- China
- Prior art keywords
- diamond thin
- thin film
- reaction chamber
- gas
- carbon monoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
A method and its apparatus for plating diamond film on the surface of substrate (plastics, steel, iron, etc.) comprise by using high-frequency plasma chemical gas deposition technology, in which CO and N2 are used as gas source and the plating takes place at ordinary temp to 500 deg.C. Its apparatus is suitable for the workpieces in different sizes and shapes.
Description
The present invention relates to the technology and equipment of PCVD (Plasma Chemical Vapor Deposition) at metal or other materials surface plating diamond thin film.
Because the diamond thin excellent performance is widely used, and has caused people's attention.The method for preparing at present diamond thin is a lot, method commonly used is that the methane hydrocarbon that dilutes with hydrogen is a reactant gases, use heat wire chemical vapor deposition method, arc discharge chemical vapor deposition method, arc spraying method, burning flame method or microwave plasma chemical vapor deposition method etc.
When adopting hot wire chemical vapor deposition method, arc discharge chemical vapor deposition method, arc spraying method and burning flame method plating diamond thin film, because the underlayer temperature very high (800-1000 ℃) during plated film, used reactant gases is the methane hydrocarbon, so there is following shortcoming:
1. on the low melting material surface, can not plating diamond thin film;
2. some material plated film under such high temperature, this body structure can change, and has influenced their original performances;
3. under hot conditions, carbon atom is at some material, and for example the diffusibility in steel and iron is very strong, therefore on the surface of steel and iron-based material, and can not plating diamond thin film;
4. general diamond thin is different with the thermal expansivity of plated body body, plated film at high temperature, and when object plated film postcooling during to room temperature, because temperature fluctuation is bigger, coating easily breaks even comes off;
5. owing in the reactant gases hydrogen atom is arranged, in coating process, exist hydrogen atom to being plated the disadvantageous effect of material and coating, hydrogen embrittlement easily takes place to be plated material, and coating also easily breaks even comes off.
The microwave plasma chemical vapor deposition method, though can be under lower temperature plating diamond thin film, it has following shortcoming:
1. apparatus expensive;
Therefore 2. reaction chamber is generally all less, can not the big workpiece of lining;
3. owing to also there being hydrogen to exist in the coating process, so also have hydrogen atom to being plated the disadvantageous effect of material and coating.
The purpose of this invention is to provide a kind of plating diamond thin film at low temperatures thereby can both plating diamond thin film and do not have the method for plating diamond thin film of hydrogen disadvantageous effect and an inexpensive filming equipment at low melting material, steel, iron surface.
The technical solution of the method for plating diamond thin film of the present invention is:
The method of plating diamond thin film of the present invention is to be source of the gas with carbon monoxide and nitrogen mixture gas, uses the high frequency plasma chemical vapor deposition method at the substrate surface plating diamond thin film.Just under the rough vacuum condition, between the two poles of the earth in reaction chamber, carbon monoxide and nitrogen mixture gas decompose through the high frequency discharge effect, and carbon atom is deposited at substrate surface, form diamond thin.Concrete way is: under the air pressure of carbon monoxide that is lower than 1000Pa and nitrogen mixture gas, under the high frequency discharge effect of 500-1000 volt voltage, 1MHz-50MHz, carbon monoxide and nitrogen decompose between two electrodes, make the carbon atom in the carbon monoxide plasma body, mainly condense and growth at substrate surface, at the substrate surface plating diamond thin film with adamantine frame mode.The component of used mixed gas is the carbon monoxide portion, nitrogen 2-10 part (V/V).In order to reduce sparking voltage, can in mixed gas, add the argon gas of 1-3%.
The technical solution of the equipment of plating diamond thin film of the present invention is:
Lining equipment mainly contains a reaction chamber, and reaction chamber is the metallic cavity structure, and two electrodes are wherein arranged, and intake ducting is arranged, and by intake ducting, mixed gas can enter in the reaction chamber, and an extraction pipe is arranged, and by extraction pipe, reaction chamber can be evacuated.In order to adapt to different shape of workpiece to be plated and size, two distance between electrodes can be regulated.In order to make on the substrate sedimentary diamond thin thickness even, can add in the exit of inlet pipe and put a gas distributing device.The well heater that heated substrate can be arranged outside reaction chamber, with the temperature of control coating process, plated film can carry out between room temperature to 500 ℃.Between two electrodes in addition 500-1000 volt voltage, frequency be the power supply of 1MHz-50MHz, to reach discharge effect.Mixed gas flow is 20-120SCCM.
Adopt the method and apparatus of plating diamond thin film of the present invention that following advantage and effect are arranged:
1. equipment is simple, and is easy to operate, less investment, and the construction period is short;
2. the plated film area is big and even, and reaction chamber can be according to the shape and the size design of workpiece to be plated;
3. because coating temperature is low, can be on the low melting material surface even the frosting plating diamond thin film, can at iron and steel the rapid tool steel tool surface plating diamond thin film of base material also.
4. low owing to coating temperature, temperature fluctuation is little, can be not different because of the thermal expansivity of film and substrate material, and coating breaks even comes off.Adhere to very firm between coating and the substrate.
5. because the present invention uses is the mixed gas that carbon monoxide and nitrogen are formed, stop hydrogen atom, avoided hydrogen atom to by the disadvantageous effect of plating material and coating.
Use the present invention, at differing materials surface plating diamond thin film, its hardness and work-ing life all are significantly increased, and as at the thick diamond thin of high-speed tool spray of molten steel roller slotting cutter surface lining 0.2um, its HRC hardness surpasses 70, and increase by 500 work-ing life.
Description of drawings:
Fig. 1 is the synoptic diagram of an embodiment of plating diamond thin film reaction chamber.
Plating diamond thin film equipment is made up of reaction chamber and housing.Reaction chamber as shown in Figure 1, make by stainless steel, internal diameter is 515mm, the circular cylindrical cavity (1) of high 400mm, on having in the cavity (1), the plate electrode (2 and 3) that following two diameters are 400mm, top electrode (2) is fixed together by teflon insulation post (4) and inlet pipe (5), teflon insulation post (4) has 6 induction trunks (6), inlet pipe (5) adopts with the top of cavity (1) and flexibly connects, inlet pipe (5) can be moved up and down, regulate the distance between top electrode (2) and the lower electrode (3), be lined with rubber sealing ring (7) to reach hermetic seal between inlet pipe (5) and the cavity (1).There is a gas distributing device (8) in the exit of induction trunk (6), and it is made of a circular plate washer moving up and down.A pipeline (9) and a well heater (10) of can skewer going into thermopair are arranged at lower electrode (3) bottom, for the ease of lower electrode dismounting and cleaning, reach hermetic seal for removable jew is connected and is lined with rubber washer (11) between the end of cavity and the lower electrode.In order to prevent the rubber cradle heat damaging, adopt contact water-cooled device (12), extraction pipe (13) links to each other with an annulus (14), and annulus (14) communicates with cavity (1) inside by narrow annular channel (15), is drawn out of equably to guarantee the gas in the cavity (1).In cavity (1) side one side door (16) is arranged, be convenient to put, get workpiece to be plated.
Housing is the versatility housing, can control reaction chamber temperature, gas flow, reach vacuum tightness etc.
The cutter for fluting twist drills of diameter 50mm is placed on the lower electrode (3), closes side door (16), and reaction chamber is vacuumized, and when vacuum tightness reaches 10Pa when following, puts into carbon monoxide and nitrogen mixture gas and cleans, and is evacuated to vacuum again, to get rid of the intravital residual air in chamber.Feed mixed gas then, carbon monoxide is 1 to 3 with the ratio of nitrogen, and total gas flow rate is 100SCCM.Air pressure 800Pa.Heated substrate, the control substrate temperature is 300 ℃.Connect 800 volts high frequency electric source, the high frequency electric source frequency is 13.56MHz, makes gas discharge decomposition.Plated film 2 hours, the thick 0.2um of diamond thin, and can reach five times of former milling cutter the work-ing life of milling cutter.
Embodiment 3. is at the glass surface plating diamond thin film.
At glass and silica glass surface plating diamond thin film, adopt the technical process identical with embodiment 2, but wherein carbon monoxide is 1 to 5 with the ratio of nitrogen, add 3% argon in the gas, the total flux of gas is 50SCCM, and reaction chamber temperature is 400 ℃, voltage is 600 volts, lining 3 hours, the thick 0.2um of coating, plate film water white transparency diamond thin.
Embodiment 4. is at glass lens surface plating diamond thin film.
At glass lens surface plating diamond thin film, adopt the technical process identical with embodiment 2, but wherein the ratio of carbon monoxide and nitrogen is 1 to 7, total gas flow rate is 30SCCM, reaction chamber temperature is 70 ℃, high-frequency voltage is 1000 volts, and lining 3 hours can obtain the lining effect glass lens of diamond thin preferably.
Claims (10)
1. the method for a plating diamond thin film is characterized in that with carbon monoxide and nitrogen mixture gas be source of the gas, uses the high frequency plasma chemical vapor deposition method at the substrate surface plating diamond thin film.
2. film coating method according to claim 1 is characterized in that under rough vacuum, and between two electrodes, carbon monoxide and nitrogen mixture gas decompose through the high frequency discharge effect, and carbon atom is deposited at substrate surface, forms diamond thin.
3. film coating method according to claim 1 and 2 is characterized in that under the air pressure of carbon monoxide that is lower than 1000Pa and nitrogen mixture gas, under the high frequency discharge effect of 1MHz-50MHz, at substrate surface lining diamond film having.
4. film coating method according to claim 1 and 2 is characterized in that in carbon monoxide and the nitrogen mixture gas, and carbon monoxide is 1 to 2 to 1 to 10 with the volume ratio of nitrogen.
5. film coating method according to claim 4 is characterized in that can adding argon gas in mixed gas, to reduce the voltage breakdown of reactant gases.
6. film coating method according to claim 1 and 2 is characterized in that plated film can carry out under room temperature to 500 ℃.
7. the equipment of a plating diamond thin film, it is characterized in that mainly containing a reaction chamber, reaction chamber is the metallic cavity structure, two electrodes are wherein arranged, intake ducting is arranged, pass through intake ducting, mixed gas can enter in the reaction chamber, one extraction pipe is arranged,, reaction chamber can be evacuated by extraction pipe.
8. filming equipment according to claim 7 is characterized in that two distance between electrodes can regulate.
9. according to claim 7 and 8 described filming equipments, it is characterized in that to add and put a gas distributing device in the exit of inlet pipe.
10. according to claim 7 and 8 described filming equipments, it is characterized in that outside reaction chamber the well heater of heated substrate can be arranged.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95111077 CN1138635A (en) | 1995-06-16 | 1995-06-16 | Method and appts. for low temp plating diamond thin film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 95111077 CN1138635A (en) | 1995-06-16 | 1995-06-16 | Method and appts. for low temp plating diamond thin film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN1138635A true CN1138635A (en) | 1996-12-25 |
Family
ID=5078395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 95111077 Pending CN1138635A (en) | 1995-06-16 | 1995-06-16 | Method and appts. for low temp plating diamond thin film |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1138635A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101089221B (en) * | 2006-06-14 | 2010-05-12 | 中国砂轮企业股份有限公司 | Manufacturing method of diamond coating film and its application |
| CN101591775B (en) * | 2009-06-18 | 2010-12-08 | 天津理工大学 | Thin film deposition system device suitable for diamond heat-sink membrane |
| CN102112651B (en) * | 2008-08-28 | 2013-05-22 | 东京毅力科创株式会社 | Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film and method for manufacturing semiconductor device |
| CN106367729A (en) * | 2015-07-24 | 2017-02-01 | 友技科株式会社 | plasma chemical vapor deposition device (CVD) and film formation method |
-
1995
- 1995-06-16 CN CN 95111077 patent/CN1138635A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101089221B (en) * | 2006-06-14 | 2010-05-12 | 中国砂轮企业股份有限公司 | Manufacturing method of diamond coating film and its application |
| CN102112651B (en) * | 2008-08-28 | 2013-05-22 | 东京毅力科创株式会社 | Method for forming amorphous carbon nitride film, amorphous carbon nitride film, multilayer resist film and method for manufacturing semiconductor device |
| CN101591775B (en) * | 2009-06-18 | 2010-12-08 | 天津理工大学 | Thin film deposition system device suitable for diamond heat-sink membrane |
| CN106367729A (en) * | 2015-07-24 | 2017-02-01 | 友技科株式会社 | plasma chemical vapor deposition device (CVD) and film formation method |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4924061A (en) | Microwave plasma torch, device comprising such a torch and process for manufacturing powder by the use thereof | |
| CN101522941B (en) | Method and device for plasma-assisted chemical vapour deposition on the inner wall of a hollow body | |
| US8383210B2 (en) | Method of forming a film by deposition from a plasma | |
| US4434742A (en) | Installation for depositing thin layers in the reactive vapor phase | |
| KR101514479B1 (en) | Plasma system | |
| US20030072881A1 (en) | Apparatus and method for large area chemical vapor deposition using multiple expanding thermal plasma generators | |
| TW261689B (en) | Method and apparatus for producing thin films by low temperature plasma-enhanced chemical vapor deposition using a rotating susceptor reactor | |
| US5951742A (en) | Processes for the scrubbing of exhaust gas streams | |
| Rudder et al. | Direct deposition of polycrystalline diamond films on Si (100) without surface pretreatment | |
| JPH1060652A (en) | Method for plasma treatment of surface and apparatus therefor | |
| WO2021109377A1 (en) | Coating equipment for preparing dlc and use thereof | |
| CN1138635A (en) | Method and appts. for low temp plating diamond thin film | |
| US20120222617A1 (en) | Plasma system and method of producing a functional coating | |
| JPH03183781A (en) | Method and device for forming thin membrane | |
| CN1696340A (en) | Chemical vapor deposition equipment and deposition method | |
| US5667852A (en) | Plasma jet CVD method of depositing diamond or diamond-like films | |
| CN86106364A (en) | The method and apparatus of preparation of protective layer by plasma deposition | |
| CN207276694U (en) | A kind of heating furnace being surface-treated by ion bombardment | |
| US3950479A (en) | Method of producing hollow semiconductor bodies | |
| CN215365974U (en) | Chemical vapor deposition equipment for preparing carbon material | |
| Girshick | Diamond CVD using radio-frequency plasmas | |
| US6623802B1 (en) | Process and installation for forming a layer on a substrate | |
| RU2040600C1 (en) | Method for precipitation of diamond coatings in plasma jet | |
| Bárdoš et al. | Deposition of carbonaceous films onto internal walls of tubes | |
| CN1041445C (en) | Method for gas phase synthetizing diamond |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C01 | Deemed withdrawal of patent application (patent law 1993) | ||
| WD01 | Invention patent application deemed withdrawn after publication |