CN106367729A - plasma chemical vapor deposition device (CVD) and film formation method - Google Patents
plasma chemical vapor deposition device (CVD) and film formation method Download PDFInfo
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- CN106367729A CN106367729A CN201610511764.6A CN201610511764A CN106367729A CN 106367729 A CN106367729 A CN 106367729A CN 201610511764 A CN201610511764 A CN 201610511764A CN 106367729 A CN106367729 A CN 106367729A
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
- C23C16/5096—Flat-bed apparatus
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
- C23C16/27—Diamond only
- C23C16/272—Diamond only using DC, AC or RF discharges
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
- C23C16/325—Silicon carbide
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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Abstract
The invention discloses a plasma CVD device which enables the film to be uniformly formed on the side of a three-dimensional base material. The invention discloses a plasma chemical vapor CVD device. The plasma chemical vapor CVD device has a chamber (11), a high frequency power supply (6) which provides high frequency output and a first electrode (14) which configures a protruding portion (14a) of the base material (12) on the surface and is electrically connected to the high frequency power supply, and a gas guiding port (20) which guides the gas of the raw material to the chamber.
Description
Technical field
The present invention relates to plasma activated chemical vapour deposition be cvd (chemical vapor deposition) device with
And film build method.
Background technology
Figure 12 is the profile schematically showing existing plasma cvd device.
This plasma cvd device has chamber 1, is configured with the electrode of the base material 2 of configuration three-dimensional shape in this chamber 1
3.This electrode 3 is connected with the high frequency electric source (rf power supply) 4 of 50～500khz via adapter (not shown), and electrode 3 is as rf electricity
Pole and play a role.This high frequency electric source 4 applies high frequency via adapter and electrode 3 to base material 2.That is, this plasma cvd dress
Put by high frequency electric source 4, the high frequency electric of 50～500khz is supplied to electrode 3 via adapter so that in three-dimensional shape
The top of base material 2 and the plasma of surrounding generation gas.In addition, chamber 1 is connected with earthing potential.
Configuration having heaters 5 around electrode 3.It is provided with the gas introduction port 10 importing unstrpped gas in chamber 1.Should
Gas introduction port 10 is connected with the gas lead-in path (not shown) importing unstrpped gas into chamber 1.Gas lead-in path has
There is gas pipe (not shown).Additionally, chamber 1 be connected to its inside is carried out vacuum exhaust vacuum pump 13 (referring for example to
Patent documentation 1).
Even if wanting to make dlc (diamond like carbon, diamond-like using above-mentioned existing plasma cvd device
Stone carbon) film equably film forming in the base material of three-dimensional shape, equably film forming is also highly difficult to make dlc film in the side of base material.
Additionally, making the dlc film film forming of high rigidity in the method for base material as using above-mentioned existing plasma cvd device
One of, the method that there is the output improving high frequency electric source 4.But, if improving the output of high frequency electric source 4, electric power becomes easy
Concentrate on the different part of conductance.As a result, become to be susceptible to paradoxical discharge, therefore make the dlc film film forming of high rigidity become tired
Difficult.
Citation
Patent documentation
Patent documentation 1:jp JP 2008-38217 publication
Content of the invention
The problem of one mode of the present invention is, providing a kind of can make film uniformity in the side of the base material of three-dimensional shape
The plasma cvd device of film forming or film build method well.
Additionally, the problem of a mode of the present invention is, provide one kind can make while suppressing paradoxical discharge high hard
The plasma cvd device of film film forming of degree or film build method.
Hereinafter, the various modes of the present invention are described.
[1] a kind of plasma cvd device is it is characterised in that possess:
Chamber；
High frequency electric source, it provides high frequency output；
1st electrode, its configuration, in described within the chamber, is electrically connected with described high frequency electric source, and has for configuring on surface
The protuberance of base material；With
Gas introduction port, it imports unstrpped gas to described within the chamber.
According to above-mentioned plasma cvd device, by configuring base material on protuberance, carried from high frequency electric source to the 1st electrode
For high frequency output such that it is able to producing the plasma of unstrpped gas and making film film forming in base material.
[2] in above-mentioned [1], plasma cvd device is characterised by having:
2nd electrode, its configuration in described within the chamber, electrically connect with described high frequency electric source, and with described 1st electrode contraposition；
With
Control unit, it is controlled so that providing described high frequency output to described 1st electrode and described 2nd electrode.
According to above-mentioned plasma cvd device, by base material is configured on protuberance, from high frequency electric source to the 1st electrode with
And the 2nd electrode provide high frequency output such that it is able between described 1st electrode and described 2nd electrode produce unstrpped gas etc.
Gas ions and make film film forming in described base material.
[3] in above-mentioned [2], plasma cvd device is characterised by,
Described 1st electrode and the respective external diameter of described 2nd electrode are more than 50mm and below 1000mm,
The distance between described 1st electrode and described 2nd electrode are more than 10mm and below 500mm.
[4] in any one of above-mentioned [1]～[3], plasma cvd device is characterised by,
Described high frequency electric source is the power supply of the high frequency output of offer 50～500khz.
[5] in any one of above-mentioned [1]～[4], plasma cvd device is characterised by,
The external diameter of described protuberance is below the external diameter of described base material.
[6] in any one of above-mentioned [1]～[5], plasma cvd device is characterised by,
Described unstrpped gas is the film forming gas of any one in dlc film, silicon carbide film and silicon oxide film.
[7] in above-mentioned [6], plasma cvd device is characterised by,
The film forming gas of described dlc film comprises the hydrocarbon system compound of the c atom containing more than 6.
[8] in above-mentioned [6], plasma cvd device is characterised by,
The film forming gas of described silicon carbide film comprises the silicon compound of the si atom containing more than 2.
[9] in above-mentioned [7], plasma cvd device is characterised by,
The film forming gas of described dlc film comprises toluene.
[10] in above-mentioned [8], plasma cvd device is characterised by,
The film forming gas of described silicon carbide film comprises hmds.
[11] in any one of above-mentioned [1]～[10], plasma cvd device is characterised by,
Described plasma cvd device has the vacuum exhaust mechanism that described within the chamber is carried out with vacuum exhaust.
According to above-mentioned plasma cvd device, vacuum exhaust is carried out within the chamber by vacuum exhaust mechanism, thus, it is possible to
The pressure enough making described within the chamber is more than 0.5pa and below 20pa.
[12] in above-mentioned [11], plasma cvd device is characterised by,
Described vacuum exhaust mechanism has from the group by rotary pump, rotary pump and mechanical booster pump and dry pump, dry type
Pump organizes, with mechanical booster pump, one of them selecting in the group constituting.
[13] a kind of film build method it is characterised in that
There is on surface the 1st electrode of protuberance within the chamber configuration,
In the described protuberance configuration base material of described 1st electrode,
While to described within the chamber importing unstrpped gas, vacuum exhaust is carried out to described within the chamber,
By providing high frequency output to described 1st electrode, thus producing the plasma of described unstrpped gas and so that film is become
Film is in described base material.
[14] in above-mentioned [13], film build method is characterised by,
Configure described 1st electrode in described within the chamber, and configure the 2nd electrode with described 1st electrode contraposition,
By to described 1st electrode and described 2nd electrode provide high frequency output, thus described 1st electrode with described
Produce the plasma of described unstrpped gas between 2nd electrode and make film film forming in described base material.
[15] in above-mentioned [14], film build method is characterised by,
The frequency of the high frequency output providing to described 1st electrode and described 2nd electrode is 50～500khz.
[16] in above-mentioned [14] or [15], film build method is characterised by,
Described 1st electrode and the respective external diameter of described 2nd electrode are more than 50mm and below 1000mm,
The distance between described 1st electrode and described 2nd electrode are more than 10mm and below 500mm.
[17] in any one of above-mentioned [13]～[16], film build method is characterised by,
The external diameter of described protuberance is below the external diameter of described base material.
[18] in any one of above-mentioned [13]～[17], film build method is characterised by,
Described unstrpped gas is the film forming gas of any one in dlc film, silicon carbide film and silicon oxide film.
[19] in above-mentioned [18], film build method is characterised by,
The film forming gas of described dlc film comprises the hydrocarbon system compound of the c atom containing more than 6.
[20] in above-mentioned [18], film build method is characterised by,
The film forming gas of described silicon carbide film comprises the silicon compound of the si atom containing more than 2.
[21] in above-mentioned [19], film build method is characterised by,
The film forming gas of described dlc film comprises toluene.
[22] in above-mentioned [20], film build method is characterised by,
The film forming gas of described silicon carbide film comprises hmds.
[23] in any one of above-mentioned [13]～[22], film build method is characterised by,
By vacuum exhaust is carried out to described within the chamber, so that the pressure of described within the chamber is more than 0.5pa and 20pa
Below.
A mode according to the present invention, using the teaching of the invention it is possible to provide a kind of film uniformity can be made good in the side of the base material of three-dimensional shape
The plasma cvd device of film forming or film build method well.
Additionally, the mode according to the present invention, using the teaching of the invention it is possible to provide one kind can make high rigidity while suppressing paradoxical discharge
The plasma cvd device of film film forming or film build method.
Brief description
Fig. 1 is the pie graph of the plasma cvd device involved by a mode briefly expressing the present invention.
Fig. 2 is the figure more than the situation of external diameter 33 of base material 12 for the external diameter 32 of the protuberance 31a representing electrode 31.
Fig. 3 is the pie graph of the plasma cvd device involved by a mode briefly expressing the present invention.
Fig. 4 is the figure of the film thickness distribution of film thickness measuring result representing embodiment 1 and comparative example 1.
Fig. 5 is the figure of the film thickness ratio distribution of the film thickness measuring result representing embodiment 1 and comparative example 1.
Fig. 6 is the figure of the film thickness distribution of film thickness measuring result representing embodiment 2 and comparative example 2.
Fig. 7 is the figure of the film thickness ratio distribution of the film thickness measuring result representing embodiment 2 and comparative example 2.
Fig. 8 is the figure of the film thickness distribution of film thickness measuring result representing embodiment 3 and comparative example 3.
Fig. 9 is the figure of the film thickness ratio distribution of the film thickness measuring result representing embodiment 3 and comparative example 3.
Figure 10 is the figure of the film thickness distribution of film thickness measuring result representing embodiment 4 and comparative example 4.
Figure 11 is the figure of the film thickness ratio distribution of the film thickness measuring result representing embodiment 4 and comparative example 4.
Figure 12 is the profile schematically showing existing plasma cvd device.
Symbol description
1 ... chamber
2 ... base materials
3 ... electrodes
4 ... high frequency electric sources (rf power supply)
5 ... heaters
6 ... high frequency electric sources (rf power supply)
7 ... adapters
10 ... gas introduction ports
11 ... chambers
12 ... base materials
The side of 12a ... base material
13 ... vacuum pumps
14 ... the 1st electrodes
15 ... the 2nd electrodes
16 ... vacuum pumps
20 ... gas introduction ports
The external diameter of 21 ... the 1st electrodes
The external diameter of 22 ... the 2nd electrodes
The distance between 23 ... the 1st electrodes and the 2nd electrode
31 ... electrodes
31a ... protuberance
The external diameter of the protuberance of 32 ... electrodes
The external diameter of 33 ... base materials
The part that the upper surface of 34 ... protuberances exposes from base material
Specific embodiment
Hereinafter, embodiments of the present invention and embodiment are described in detail using accompanying drawing.But, if art technology
Personnel are then understood that, the present invention is not limited to following explanation, in the purport without departing from the present invention and its scope, energy
Enough various changes are carried out to its form and detailed content.Therefore, the present invention should not be construed as limited to enforcement shown below
The contents of mode and embodiment.
[the 1st embodiment]
Fig. 1 is the pie graph of the plasma cvd device involved by a mode briefly expressing the present invention.This plasma
Cvd device has chamber 11, is configured with the 1st electrode 14 in this chamber 11.1st electrode 14 has protuberance 14a, the 1st electrode 14
It is so-called male electrode.The base material 12 of the protuberance 14a of the 1st electrode 14 surface configuration three-dimensional shape thereon.
In addition, the base material 12 of three-dimensional shape in the present embodiment, is configured on the protuberance 14a of the 1st electrode 14, but also may be used
To be configured to the 1st electrode 14 is set on hold the substrate holder of base material 12, this substrate holder has protuberance, keeps on this protuberance
The base material of three-dimensional shape, in this case substrate holder play the effect of the 1st electrode.
1st electrode 14 is electrically connected with high frequency electric source (rf power supply) 6 via adapter 7, and the frequency of this high frequency electric source 6 exists
It is advisable in the range of 50khz～27mhz, preferably 50khz～500khz.That is, high frequency electric source 6 is via adapter 7, the 1st electrode
The 14 and its protuberance 14a base material 12 applying high frequency outputs to three-dimensional shape.Then, this plasma cvd device passes through high-frequency electrical
Source 6, provides the high frequency of 50khz～27mhz (preferably 50～500khz) via adapter 7 to the 1st electrode 14 and its protuberance 14a
Electric current is so that produce the plasma of unstrpped gas around base material 12.In addition, chamber 11 is connected with earthing potential.Additionally,
Plasma cvd device has the control unit (not shown) controlling high frequency electric source 6, and this control unit is controlled such that to the 1st electricity
Pole 14 provides the high frequency output from high frequency electric source 6.
In addition, in the present embodiment, the preferred scope of the frequency of high frequency electric source has been set to 50～500khz, but more excellent
Elect the high frequency electric source of below usage frequency 400khz as.In the case of employing the high frequency electric source of below 400khz, there is energy
Enough advantages to obtain coupling by using the adapter of the low price of matching transformer etc..If additionally, the frequency of high frequency electric source
Less than 50khz, then can produce and produce the such problem of sensing heating in base material.If additionally, the frequency of high frequency electric source is 500khz
Hereinafter, then the bias putting on base material raises, and has and becomes easily to make the such advantage of insulator film film forming.Additionally, the 1st electrode
14 external diameter 21 is more than 50mm and below 1000mm is advisable.
Additionally, having heaters (not shown) can also be configured around the 1st electrode 14.Can be by this heater to base
Material 12 is heated.
In addition, in the present embodiment, employ the base material 12 of three-dimensional shape but it is also possible to use beyond three-dimensional shape
Base material.
It is provided with the gas introduction port 20 importing unstrpped gas in chamber 11.This gas introduction port 20 is led with into chamber 11
The gas lead-in path entering unstrpped gas is (not shown) connected.Gas lead-in path has gas pipe (not shown).In this gas
Body pipe arrangement, is provided with the effusion meter (not shown) measuring gas flow and controls the gas flow controller of gas flow (not scheme
Show).By effusion meter thus appropriate unstrpped gas (any one in such as dlc film, silicon carbide film and silicon oxide film
Film forming gas) it is provided in chamber 11 from gas introduction port 20.The film forming gas of dlc film comprises the c containing more than 6
The hydrocarbon system compound of atom is advisable, for example, comprise toluene and be advisable.Additionally, the film forming gas of silicon carbide film comprise containing 2 with
On the silicon compound of si atom be advisable, for example comprise hexamethyldisiloxane or hexamethyl disiloxane (below also by these
It is generically and collectively referred to as hmds) it is advisable.
Additionally, in chamber 11, being connected to the vacuum pump 16 as the vacuum exhaust mechanism that its inside is carried out with vacuum exhaust.
This pump 16 do not use high price and safeguard numerous and diverse turbomolecular pump, diffusion pump and by cheap and safeguard that simple pump is constituted and be advisable.
Cheap and safeguard simple pump e.g. from the group by rotary pump, rotary pump and mechanical booster pump and dry pump, dry pump with
The pump selecting in the group that the group of mechanical booster pump is constituted or group.For the pump of such simple composition, only can
Obtain the vacuum of 0.5pa degree, but in the method involved by a mode of the present invention, even if under such coarse vacuum
High-quality epithelium can be manufactured.
The high frequency electric source 6 that frequency is set to 50～500khz has both the advantage of DC source and high frequency electric source, has use
The such advantage of the such industrial also easy to handle frequency of 50～500khz, even if also have productivity under partial vacuum
Also excellent such advantage.Additionally, in the case of the high frequency electric source of 50～500khz, there is the bias effect improving to base material
Such advantage, thus has the advantages that to be capable of low vacuum technology and the high speed of technique.This advantage is capable of low one-tenth
This change.
Then, the method illustrating to make the base material 12 in three-dimensional shape for the film film forming using the plasma cvd device of Fig. 1.
The base material 12 of three-dimensional shape is configured on the protuberance 14a of the 1st electrode 14, leads in gas introduction port 20 is to chamber 11
While entering unstrpped gas, vacuum exhaust is carried out in chamber 11 by vacuum pump 16.By importing and the aerofluxuss of unstrpped gas
Balance and make in chamber 11, to become authorized pressure (more than 0.5pa and below 20pa).In addition, in the present embodiment, by chamber
After being reduced pressure in room 11, film forming is carried out to film, but be not limited to this it is also possible to make the pressure in chamber 11 become normal pressure
Film forming is carried out to film.
Then, provide frequency 50khz～27mhz via adapter 7 to the 1st electrode 14 and its protuberance 14a from high frequency electric source 6
The high frequency output of (preferably 50khz～500khz, such as 380khz).Thus, generation around the base material 12 on protuberance 14a
The plasma of unstrpped gas and make film film forming in base material 12.
By the unstrpped gas importing from gas introduction port 20 being set to the film forming gas of dlc film such that it is able in chamber
Produce the plasma of film forming gas of dlc film in room 11 and make dlc film film forming in base material 12.The film forming gas of dlc film
The hydrocarbon system compound comprising the c atom containing more than 6 is advisable, and comprises toluene and is advisable.
Additionally, by the film forming gas that the unstrpped gas importing from gas introduction port 20 is set to silicon carbide film, thus
The plasma of film forming gas of silicon carbide film can be produced in chamber 11 and make silicon carbide film film forming in base material 12.Carbonization
The silicon compound that the film forming gas of silicon fiml comprises the si atom containing more than 2 is advisable, and comprises hmds and is advisable.
Additionally, by the film forming gas that the unstrpped gas importing from gas introduction port 20 is set to silicon oxide film, thus
The plasma of film forming gas of silicon oxide film can be produced in chamber 11 and make silicon oxide film film forming in base material 12.
According to above-mentioned embodiment, protuberance 14a is set in the 1st electrode 14, the base of three-dimensional shape is configured on this protuberance 14a
Material 12, provides high frequency output by high frequency electric source 6 to the 1st electrode 14 and its protuberance 14a.Therefore, it is possible to the base in three-dimensional shape
The side of material 12 makes film uniformity film forming well.That is, if there is no on the electrode 3 of protuberance to configure three-dimensional shape shown in Figure 12
Base material, then can not make film uniformity film forming well in the side of this base material, if the 1st electrode shown on the other hand in Fig. 1
Configure base material 12 on 14 protuberance 14a, then can make film uniformity film forming well in the side of this base material 12.
Additionally, the external diameter of protuberance 14a is preferably below the external diameter of base material 12.Thereby, it is possible to the base material 12 in three-dimensional shape
Side make film more have good uniformity ground film forming.If its reason may be considered the outer of the protuberance 31a of electrode 31 as shown in Figure 2
Footpath 32 is more than the external diameter 33 of base material 12, then the part 34 exposed from base material 12 in the upper surface generation of protuberance 31a, close to this
The side 12a of the base material 12 of part 34 can not make film uniformity film forming well.But, if as shown in figure 1, there is no protuberance 14a
The upper surface part exposed from base material 12, then can eliminate and can not make film uniformity film forming well in the side of base material 12
One of reason.
[the 2nd embodiment]
Fig. 3 be briefly express the present invention the plasma cvd device involved by a mode pie graph, for Fig. 1
Identical part marks identical symbol, and different parts are only described.
It is configured with the 2nd electrode 15 in the chamber 11 of the plasma cvd device of Fig. 3, the 2nd electrode 15 is configured to and the
1 electrode 14 is opposed.It is right with the 2nd electrode 15 that the base material 12 of the three-dimensional shape configuring on the protuberance 14a of the 1st electrode 14 is positioned to
Put.
1st electrode 14 and the 2nd electrode 15 are respectively via the high frequency electric source (rf power supply) 6 of adapter 7 and 50～500khz
Electrical connection.That is, high frequency electric source 6 is electrically connected with the both sides of the 1st electrode 14 and the 2nd electrode 15 via adapter 7.This plasma
Cvd device passes through high frequency electric source 6, provides the high-frequency electrical of 50～500khz to the 1st and the 2nd electrode 14,15 via adapter 7
Flow so that (i.e. top of base material 12) produces the plasma of unstrpped gas between the 1st electrode 14 and the 2nd electrode 15.In addition,
Chamber 11 is connected with earthing potential.Additionally, plasma cvd device has the control unit (not shown) controlling high frequency electric source 6, should
Control unit is controlled such that the high frequency output providing from high frequency electric source 6 to the 1st and the 2nd electrode 14,15.
The external diameter 22 of the external diameter 21 of the 1st electrode 14 and the 2nd electrode 15 is respectively more than 50mm and below 1000mm is advisable.
Additionally, the distance between the 1st electrode 14 and the 2nd electrode 15 23 is more than 10mm and below 500mm is advisable.Such external diameter 21,
22 and distance 23 be suitable to while suppressing paradoxical discharge make the film film forming of high rigidity.
Then, illustrate to make film film forming in the method for base material 12 using the plasma cvd device of Fig. 3.
The protuberance 14a of the 1st electrode 14 configures base material 12, imports unstrpped gas in gas introduction port 20 is to chamber 11
While, vacuum exhaust is carried out in chamber 11 by vacuum pump 16.Made with the balance of aerofluxuss by the importing of unstrpped gas
Become authorized pressure (more than 0.5pa and below 20pa) in chamber 11.In addition, in the present embodiment, carry out in chamber 11
After decompression, film is carried out with film forming, but be not limited to this it is also possible to make the pressure in chamber 11 become normal pressure that film is become
Film.
Then, provide frequency 50～500khz via adapter 7 to the 1st electrode 14 and the 2nd electrode 15 from high frequency electric source 6
The high frequency output of (such as 380khz).Thus, produce the plasma of unstrpped gas between the 1st electrode 14 and the 2nd electrode 15
And make film film forming in base material 12.
By the unstrpped gas importing from gas introduction port 20 being set to the film forming gas of dlc film such that it is able in chamber
Produce the plasma of film forming gas of dlc film in room 11 and make dlc film film forming in base material 12.The film forming gas of dlc film
The hydrocarbon system compound comprising the c atom containing more than 6 is advisable, and comprises toluene and is advisable.
Additionally, by the film forming gas that the unstrpped gas importing from gas introduction port 20 is set to silicon carbide film, thus
The plasma of film forming gas of silicon carbide film can be produced in chamber 11 and make silicon carbide film film forming in base material 12.Carbonization
The silicon compound that the film forming gas of silicon fiml comprises the si atom containing more than 2 is advisable, and comprises hmds and is advisable.
Additionally, by the film forming gas that the unstrpped gas importing from gas introduction port 20 is set to silicon oxide film, thus
The plasma of film forming gas of silicon oxide film can be produced in chamber 11 and make silicon oxide film film forming in base material 12.
Also it is obtained in that effect in a same manner as in the first embodiment in the present embodiment.That is, due to setting in the 1st electrode 14
Put protuberance 14a, the base material 12 of three-dimensional shape is configured on this protuberance 14a, therefore, it is possible to make film uniformity in the side of base material 12
Film forming well.
Additionally, according to present embodiment, due to being carried to the both sides of the 1st electrode 14 and the 2nd electrode 15 by high frequency electric source
For the high frequency output of the frequency of 650～500khz, even if therefore base material 12 is that three-dimensional shape also can be in suppression paradoxical discharge
Make the film film forming of high rigidity simultaneously.Additionally, by providing high frequency output and energy to the both sides of the 1st electrode 14 and the 2nd electrode 15
The reasons why film film forming enough making high rigidity, may be considered the γ by discharging from the 1st opposed electrode 14 and the 2nd electrode 15
Electronics (secondary electron) moves back and forth between the 1st electrode 14 and the 2nd electrode 15, thus the ionisation effect of unstrpped gas obtains
To tremendous raising.
Additionally, in the present embodiment, by the 1st electrode 14 and the respective external diameter 21,22 of the 2nd electrode 15 be set to 50mm with
Go up and below 1000mm, the distance between the 1st electrode 14 and the 2nd electrode 15 23 is set to more than 10mm and below 500mm, to this
The both sides of the 1st electrode 14 of sample and the 2nd electrode 15 provide the high frequency output of the frequency of 50～500khz.Therefore, it is possible in suppression
The film film forming of high rigidity is made in base material 12 while paradoxical discharge in chamber 11 processed.
Alternatively, it is also possible to implement appropriately combined with the 2nd embodiment for the 1st embodiment.
[embodiment 1]
In the present embodiment, dlc film is made to become using the plasma cvd device shown in Fig. 1 by following membrance casting condition
Film is in the base material of three-dimensional shape, and the film thickness distribution of the dlc film of the side film forming in this base material is determined.This is measured
Result is illustrated in table 1, table 2, Fig. 4 and Fig. 5.
(membrance casting condition of the dlc film of embodiment 1)
Base material: pasted the base material of the silicon fiml of 20 × 20mm in the side of the al material of 20 × 20 × 20mm
Film formation device: the plasma cvd device shown in Fig. 1
The height of protuberance 14a: 20mm
Unstrpped gas (initiation material): toluene
Gas flow: 30sccm
Gas pressure: 0.35pa
The frequency of high frequency electric source: 13.56mhz
The output of high frequency electric source: 300w
Film formation time: 10min
In comparative example 1, make dlc film by following membrance casting condition using the plasma cvd device shown in Figure 12
Film forming is in the base material of three-dimensional shape, and the film thickness distribution of the dlc film of the side film forming in this base material is determined.This is surveyed
Determine result to be illustrated in table 1, table 2, Fig. 4 and Fig. 5.
(membrance casting condition of the dlc film of comparative example 1)
Base material: pasted the base material of the silicon fiml of 20 × 20mm in the side of the al material of 20 × 20 × 20mm
Film formation device: the plasma cvd device shown in Figure 12
The height of protuberance: 0mm
Unstrpped gas (initiation material): toluene
Gas flow: 30sccm
Gas pressure: 0.35pa
The frequency of high frequency electric source: 13.56mhz
The output of high frequency electric source: 300w
Film formation time: 10min
[table 1]
Film thickness measuring result 1 (nm)
[table 2]
Film thickness ratio 1 (%)
In table 1,2 and Fig. 4 and Fig. 5, " height of protuberance " is that the result of " 0mm " represents the result of comparative example 1,
" height of protuberance " is that the result of " 20mm " represents the result of embodiment 1, " distance of distance electrode " or " height of distance electrode " table
Show the side of the base material distance away from the bottom surface of base material.
According to table 1,2 and Fig. 4 and Fig. 5, embodiment 1 can make dlc film equal in the side of base material compared with comparative example 1
The situation of even property film forming well is confirmed that.
[embodiment 2]
In the present embodiment, using the plasma cvd device shown in Fig. 1, carborundum is made by following membrance casting condition
Film film forming is in the base material of three-dimensional shape, and the film thickness distribution of the silicon carbide film of the side film forming in this base material is determined.
This measurement result is illustrated in table 3, table 4, Fig. 6 and Fig. 7.
(membrance casting condition of the silicon carbide film of embodiment 2)
Base material: pasted the base material of the silicon fiml of 20 × 20mm in the side of the al material of 20 × 20 × 20mm
Film formation device: the plasma cvd device shown in Fig. 1
The height of protuberance 14a: 20mm
Unstrpped gas (initiation material): hexamethyldisiloxane
Gas flow: 20sccm
Gas pressure: 0.35pa
The frequency of high frequency electric source: 13.56mhz
The output of high frequency electric source: 300w
Film formation time: 10min
In comparative example 2, using the plasma cvd device shown in Figure 12, carborundum is made by following membrance casting condition
Film film forming is in the base material of three-dimensional shape, and the film thickness distribution of the silicon carbide film of the side film forming in this base material is determined.
This measurement result is illustrated in table 3, table 4, Fig. 6 and Fig. 7.
(membrance casting condition of comparative example 2 silicon carbide film)
Base material: pasted the base material of the silicon fiml of 20 × 20mm in the side of the al material of 20 × 20 × 20mm
Film formation device: the plasma cvd device shown in Figure 12
The height of protuberance: 0mm
Unstrpped gas (initiation material): hexamethyldisiloxane
Gas flow: 20sccm
Gas pressure: 0.35pa
The frequency of high frequency electric source: 13.56mhz
The output of high frequency electric source: 300w
Film formation time: 10min
[table 3]
Film thickness measuring result 2 (nm)
[table 4]
Film thickness ratio 2 (%)
According to table 3,4 and Fig. 6 and Fig. 7, embodiment 2 can make carborundum in the side of base material compared with comparative example 2
The situation of film uniformity film forming well is confirmed that.
[embodiment 3]
In the present embodiment, make dlc film by following membrance casting condition using the plasma cvd device shown in Fig. 3
Film forming is in the base material of three-dimensional shape, and the film thickness distribution of the dlc film of the side film forming in this base material is determined.This is surveyed
Determine result to be illustrated in table 5, table 6, Fig. 8 and Fig. 9.
(membrance casting condition of the dlc film of embodiment 3)
Base material: pasted the base material of the silicon fiml of 20 × 20mm in the side of the al material of 20 × 20 × 20mm
Film formation device: the plasma cvd device shown in Fig. 3
1st electrode of Fig. 3 and the 2nd electrode apart from 23:150mm
The height of protuberance 14a: 75mm
Unstrpped gas (initiation material): toluene
Gas flow: 20sccm
Gas pressure: 1.7pa
The frequency of high frequency electric source: 380khz
The output of high frequency electric source: 200w
Film formation time: 10min
In comparative example 3, the 1st electrode 14 using the plasma cvd device shown in from Fig. 3 eliminates protuberance 14a's
Device makes dlc film film forming in the base material of three-dimensional shape by following membrance casting condition, and to the side film forming in this base material
The film thickness distribution of dlc film is determined.This measurement result is illustrated in table 5, table 6, Fig. 8 and Fig. 9.Comparative example
Used in 3, plasma cvd device is and the plasma shown in Fig. 3 in addition to eliminating above-mentioned protuberance 14a this point
The same device of body cvd device.
(membrance casting condition of the dlc film of comparative example 3)
Base material: pasted the base material of the silicon fiml of 20 × 20mm in the side of the al material of 20 × 20 × 20mm
Film formation device: above-mentioned plasma cvd device
1st electrode and the distance of the 2nd electrode: 150mm
The height of protuberance: 0mm
Unstrpped gas (initiation material): toluene
Gas flow: 20sccm
Gas pressure: 1.7pa
The frequency of high frequency electric source: 380khz
The output of high frequency electric source: 200w
Film formation time: 10min
[table 5]
Film thickness measuring result 3 (nm)
[table 6]
Film thickness ratio 3 (%)
According to table 5, table 6, Fig. 8 and Fig. 9, embodiment 3 can make dlc film equal in the side of base material compared with comparative example 3
The situation of even property film forming well is confirmed that.
[embodiment 4]
In the present embodiment, using the plasma cvd device shown in Fig. 3, carborundum is made by following membrance casting condition
Film film forming is in the base material of three-dimensional shape, and the film thickness distribution of the silicon carbide film of the side film forming in this base material is determined.
This measurement result is illustrated in table 7, table 8, Figure 10 and Figure 11.
(membrance casting condition of the silicon carbide film of embodiment 4)
Base material: pasted the base material of the silicon fiml of 20 × 20mm in the side of the al material of 20 × 20 × 20mm
Film formation device: the plasma cvd device shown in Fig. 3
1st electrode of Fig. 3 and the 2nd electrode apart from 23:150mm
The height of protuberance 14a: 75mm
Unstrpped gas (initiation material): hexamethyldisiloxane
Gas flow: 20sccm
Gas pressure: 1.5pa
The frequency of high frequency electric source: 380khz
The output of high frequency electric source: 200w
Film formation time: 10min
In comparative example 4, using plasma cvd device used in comparative example 3 by following membrance casting condition
Make silicon carbide film film forming in the base material of three-dimensional shape, and the film thickness distribution of the silicon carbide film of the side film forming in this base material is carried out
Measure.This measurement result is illustrated in table 7, table 8, Figure 10 and Figure 11.
(membrance casting condition of comparative example 2 silicon carbide film)
Base material: pasted the base material of the silicon fiml of 20 × 20mm in the side of the al material of 20 × 20 × 20mm
Film formation device: above-mentioned plasma cvd device
1st electrode and the distance of the 2nd electrode: 150mm
The height of protuberance 14a: 0mm
Unstrpped gas (initiation material): hexamethyldisiloxane
Gas flow: 20sccm
Gas pressure: 1.5pa
The frequency of high frequency electric source: 380khz
The output of high frequency electric source: 200w
Film formation time: 10min
[table 7]
Film thickness measuring result 4 (nm)
[table 8]
Film thickness ratio 4 (%)
According to table 7, table 8, Figure 10 and Figure 11, embodiment 4 can make carborundum in the side of base material compared with comparative example 4
The situation of film uniformity film forming well is confirmed that.
Claims (23)
1. a kind of plasma CVD device is it is characterised in that possess:
Chamber；
High frequency electric source, it provides high frequency output；
1st electrode, its configuration, in described within the chamber, is electrically connected with described high frequency electric source, and has for configuring base material on surface
Protuberance；With
Gas introduction port, it imports unstrpped gas to described within the chamber.
2. plasma CVD device according to claim 1 is it is characterised in that described plasma chemistry
Vapor phase growing apparatus have: the 2nd electrode, and its configuration, in described within the chamber, is electrically connected with described high frequency electric source, and with the described 1st
Electrode contraposition；With
Control unit, it is controlled so that providing described high frequency output to described 1st electrode and described 2nd electrode.
3. plasma CVD device according to claim 2 it is characterised in that described 1st electrode and
The respective external diameter of described 2nd electrode is more than 50mm and below 1000mm,
The distance between described 1st electrode and described 2nd electrode are more than 10mm and below 500mm.
4. the plasma CVD device according to any one of claims 1 to 3 it is characterised in that
Described high frequency electric source is the power supply of the high frequency output of offer 50～500khz.
5. the plasma CVD device according to any one of Claims 1 to 4 it is characterised in that
The external diameter of described protuberance is below the external diameter of described base material.
6. the plasma CVD device according to any one of Claims 1 to 5 it is characterised in that
Described unstrpped gas is the film forming gas of any one in diamond-like carbon film, silicon carbide film and silicon oxide film.
7. plasma CVD device according to claim 6 it is characterised in that
The film forming gas of described diamond-like carbon film comprises the hydrocarbon system compound of the c atom containing more than 6.
8. plasma CVD device according to claim 6 it is characterised in that
The film forming gas of described silicon carbide film comprises the silicon compound of the si atom containing more than 2.
9. plasma CVD device according to claim 7 it is characterised in that
The film forming gas of described diamond-like carbon film comprises toluene.
10. plasma CVD device according to claim 8 it is characterised in that
The film forming gas of described silicon carbide film comprises hexamethyldisiloxane or hexamethyl disiloxane.
11. plasma CVD devices according to any one of claim 1～10 it is characterised in that
Described plasma CVD device has the vacuum exhaust mechanism that described within the chamber is carried out with vacuum exhaust.
12. plasma CVD devices according to claim 11 it is characterised in that
Described vacuum exhaust mechanism have from the group by rotary pump, rotary pump and mechanical booster pump and dry pump, dry pump with
One of them selecting in the group that the group of mechanical booster pump is constituted.
A kind of 13. film build methods it is characterised in that
There is on surface the 1st electrode of protuberance within the chamber configuration,
In the described protuberance configuration base material of described 1st electrode,
While to described within the chamber importing unstrpped gas, vacuum exhaust is carried out to described within the chamber,
By to described 1st electrode provide high frequency output, thus produce described unstrpped gas plasma and make film film forming in
Described base material.
14. film build methods according to claim 13 it is characterised in that
Configure described 1st electrode in described within the chamber, and configure the 2nd electrode with described 1st electrode contraposition,
By providing high frequency output to described 1st electrode and described 2nd electrode, thus in described 1st electrode and described 2nd electricity
Produce the plasma of described unstrpped gas between pole and make film film forming in described base material.
15. film build methods according to claim 14 it is characterised in that
The frequency of the high frequency output providing to described 1st electrode and described 2nd electrode is 50～500khz.
16. film build methods according to claims 14 or 15 it is characterised in that
Described 1st electrode and the respective external diameter of described 2nd electrode are more than 50mm and below 1000mm,
The distance between described 1st electrode and described 2nd electrode are more than 10mm and below 500mm.
17. film build methods according to any one of claim 13～16 it is characterised in that
The external diameter of described protuberance is below the external diameter of described base material.
18. film build methods according to any one of claim 13～17 it is characterised in that
Described unstrpped gas is the film forming gas of any one in diamond-like carbon film, silicon carbide film and silicon oxide film.
19. film build methods according to claim 18 it is characterised in that
The film forming gas of described diamond-like carbon film comprises the hydrocarbon system compound of the c atom containing more than 6.
20. film build methods according to claim 18 it is characterised in that
The film forming gas of described silicon carbide film comprises the silicon compound of the si atom containing more than 2.
21. film build methods according to claim 19 it is characterised in that
The film forming gas of described diamond-like carbon film comprises toluene.
22. film build methods according to claim 20 it is characterised in that
The film forming gas of described silicon carbide film comprises hexamethyldisiloxane or hexamethyl disiloxane.
23. film build methods according to any one of claim 13～22 it is characterised in that
By vacuum exhaust is carried out to described within the chamber, so that the pressure of described within the chamber is more than 0.5pa and below 20pa.
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| JP2015-146826 | 2015-07-24 | ||
| JP2015146826A JP2017025389A (en) | 2015-07-24 | 2015-07-24 | Plasma cvd device and film deposition method |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108251819A (en) * | 2018-01-23 | 2018-07-06 | 温州职业技术学院 | The method of twin load midfrequent AC PECVD deposition DLC coatings |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294867A (en) * | 1988-02-26 | 1989-11-28 | Semiconductor Energy Lab Co Ltd | Formation of coating film of carbon or consisting essentially of carbon |
| CN1138635A (en) * | 1995-06-16 | 1996-12-25 | 南京大学 | Method and appts. for low temp plating diamond thin film |
| CN1461494A (en) * | 2000-11-10 | 2003-12-10 | 东京毅力科创株式会社 | Plasma processing device and exhaust ring |
| JP2008038217A (en) * | 2006-08-08 | 2008-02-21 | Yamaguchi Prefecture | Plasma processing apparatus and surface treatment method for base material |
| CN101606227B (en) * | 2007-02-09 | 2012-06-06 | 东京毅力科创株式会社 | Placing bed structure, treating apparatus using the structure, and method for using the apparatus |
| CN104755653A (en) * | 2012-08-08 | 2015-07-01 | 贝恩多夫许克链带与压板技术有限公司 | Apparatus and method for the plasma coating of a substrate, in particular a press platen |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63243278A (en) * | 1987-03-31 | 1988-10-11 | Toray Ind Inc | Production of thin film |
| JP3495488B2 (en) * | 1995-01-27 | 2004-02-09 | 株式会社ボッシュオートモーティブシステム | Plasma CVD equipment |
| JPH1112735A (en) * | 1997-06-25 | 1999-01-19 | Sekisui Chem Co Ltd | Production of diamond-like thin carbon film |
| JP2003104352A (en) * | 2001-09-28 | 2003-04-09 | Toppan Printing Co Ltd | Plastic container with barrier properties |
| JP4524447B2 (en) * | 2004-11-19 | 2010-08-18 | 住友大阪セメント株式会社 | Method for forming silicon carbide thin film |
| JP4755262B2 (en) * | 2009-01-28 | 2011-08-24 | 株式会社神戸製鋼所 | Method for producing diamond-like carbon film |
-
2015
- 2015-07-24 JP JP2015146826A patent/JP2017025389A/en active Pending
- 2015-08-25 TW TW104127685A patent/TW201704527A/en unknown
-
2016
- 2016-06-30 CN CN201610511764.6A patent/CN106367729A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01294867A (en) * | 1988-02-26 | 1989-11-28 | Semiconductor Energy Lab Co Ltd | Formation of coating film of carbon or consisting essentially of carbon |
| CN1138635A (en) * | 1995-06-16 | 1996-12-25 | 南京大学 | Method and appts. for low temp plating diamond thin film |
| CN1461494A (en) * | 2000-11-10 | 2003-12-10 | 东京毅力科创株式会社 | Plasma processing device and exhaust ring |
| JP2008038217A (en) * | 2006-08-08 | 2008-02-21 | Yamaguchi Prefecture | Plasma processing apparatus and surface treatment method for base material |
| CN101606227B (en) * | 2007-02-09 | 2012-06-06 | 东京毅力科创株式会社 | Placing bed structure, treating apparatus using the structure, and method for using the apparatus |
| CN104755653A (en) * | 2012-08-08 | 2015-07-01 | 贝恩多夫许克链带与压板技术有限公司 | Apparatus and method for the plasma coating of a substrate, in particular a press platen |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108251819A (en) * | 2018-01-23 | 2018-07-06 | 温州职业技术学院 | The method of twin load midfrequent AC PECVD deposition DLC coatings |
| CN111593321A (en) * | 2018-01-23 | 2020-08-28 | 温州职业技术学院 | Method for depositing DLC coating by twinning load medium-frequency alternating current PECVD |
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| TW201704527A (en) | 2017-02-01 |
| JP2017025389A (en) | 2017-02-02 |
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