CN113839168A - Circuit arrangement for inverse power division or synthesis - Google Patents
Circuit arrangement for inverse power division or synthesis Download PDFInfo
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- CN113839168A CN113839168A CN202111089064.XA CN202111089064A CN113839168A CN 113839168 A CN113839168 A CN 113839168A CN 202111089064 A CN202111089064 A CN 202111089064A CN 113839168 A CN113839168 A CN 113839168A
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- microstrip line
- rectangular waveguide
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- circuit structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/181—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being hollow waveguides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P5/00—Coupling devices of the waveguide type
- H01P5/12—Coupling devices having more than two ports
- H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
- H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
- H01P5/184—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers the guides being strip lines or microstrips
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Abstract
The invention discloses a circuit structure for inverse power distribution or synthesis, which comprises a rectangular waveguide and a transition circuit, wherein the transition circuit comprises an annular probe, a first microstrip line and a second microstrip line, the first microstrip line is connected with a first end of the annular probe, and the second microstrip line is connected with a second end of the annular probe; the transition circuit part extends into the rectangular waveguide, part or all of the annular probe is positioned in the rectangular waveguide, and the first microstrip line and the second microstrip line extend towards the direction far away from the rectangular waveguide. The circuit structure for the inverted power distribution or synthesis can perform two-way constant-amplitude inverted power distribution on input power and synthesize two-way inverted input power, has few power distribution stages, is simple in structure, has lower insertion loss when used as a power distribution network, and adapts to higher working frequency. The invention is widely applied to the technical field of electronics.
Description
Technical Field
The invention relates to the technical field of electronics, in particular to a circuit structure for reverse phase power distribution or synthesis.
Background
Wireless communication, radar and the like have been developed from a microwave frequency band to a millimeter wave or even a terahertz frequency band, a commonly used low-loss transmission line is a metal waveguide, but an input/output interface of an active device such as a power amplifier chip is a microstrip or coplanar waveguide transmission line structure, and in order to realize power synthesis and high-power output, structures such as a waveguide power divider and waveguide-microstrip/coplanar waveguide conversion are commonly adopted. With the increase of the application frequency, the transmission line loss is increased, and the power distribution network brings more obvious insertion loss, which is not beneficial to the application in the millimeter wave and terahertz frequency band.
Disclosure of Invention
In view of at least one of the above technical problems, it is an object of the present invention to provide a circuit configuration for inverted power splitting or combining, including:
a rectangular waveguide;
a transition circuit; the transition circuit comprises an annular probe, a first microstrip line and a second microstrip line, the first microstrip line is connected with the first end of the annular probe, and the second microstrip line is connected with the second end of the annular probe; the transition circuit part extends into the rectangular waveguide, part or all of the annular probe is positioned in the rectangular waveguide, and the first microstrip line and the second microstrip line extend towards the direction far away from the rectangular waveguide.
Further, the rectangular waveguide comprises an upper cavity and a lower cavity; at least one of the upper cavity and the lower cavity is provided with a first groove, at least one of the upper cavity and the lower cavity is provided with a second groove, the upper cavity and the lower cavity are combined into a whole, the first groove is used for forming a cavity in the rectangular waveguide, and the second groove is used for accommodating the transition circuit.
Further, the transition circuit further comprises a dielectric substrate, and the dielectric substrate carries the ring probe, the first microstrip line and the second microstrip line.
Further, the transition circuit also includes a grounded coplanar waveguide carried by the dielectric substrate.
Furthermore, the grounded coplanar waveguide is insulated from the first microstrip line, and the grounded coplanar waveguide is insulated from the second microstrip line.
Further, a portion of the grounded coplanar waveguide is located between the first microstrip line and the second microstrip line.
Further, the first microstrip line is parallel to the second microstrip line, and the differential line structure is expanded after the distance between the first microstrip line and the second microstrip line is reduced.
Further, the distance between the first microstrip line and the second microstrip line is smaller than the line diameter of the first microstrip line or the second microstrip line.
Further, the plane of the dielectric substrate and the TE in the rectangular waveguide10The distribution direction of the mode magnetic field is vertical.
Further, the length of the transition circuit extending into the rectangular waveguide is equal to one quarter of the working wavelength
The invention has the beneficial effects that: the circuit structure for inverse power distribution or synthesis in the embodiment can perform two-way constant-amplitude inverse power distribution on input power and synthesize the two-way inverse input power, and has few power distribution stages, so that the structure is simple, the insertion loss is low when the circuit structure is used as a power distribution network, and the circuit structure is suitable for higher working frequency.
Drawings
FIG. 1 is a schematic diagram of an ideal simulation model of a circuit configuration for inverse power splitting or combining in an embodiment;
FIG. 2 is a schematic diagram of the actual simulation model of FIG. 1;
FIG. 3 is a diagram illustrating the assembly effect of the actual product of FIG. 2;
FIG. 4 is a diagram illustrating S-parameter simulation results obtained by simulating the circuit shown in FIG. 1 in an embodiment;
FIG. 5 is a diagram illustrating a port phase distribution simulation result obtained by simulating the circuit shown in FIG. 1 in an embodiment;
FIG. 6 shows TE in a rectangular waveguide according to an embodiment10A side view of the mode magnetic field distribution;
FIG. 7 shows TE in a rectangular waveguide according to an embodiment10A top view of a mode magnetic field distribution;
FIG. 8 is a diagram showing an excitation current distribution of the ring probe in the embodiment;
FIG. 9 is a side view showing an electric field distribution of a TEM wave in the grounded coplanar waveguide in the embodiment;
FIG. 10 is a waveguide-differential line transition structure after the circuit for inverse power distribution or synthesis is expanded in the embodiment;
FIG. 11 is a schematic view of the actual simulation model of FIG. 10;
FIG. 12 is a view showing an effect of assembling the actual product of FIG. 11;
FIG. 13 is a diagram illustrating S-parameter simulation results obtained by simulating the circuit shown in FIG. 10 in the example.
Detailed Description
In the present embodiment, the circuit configuration for the inverted power division or synthesis includes a rectangular waveguide and a transition circuit. Referring to fig. 1, the transition circuit includes an annular probe, a first microstrip line and a second microstrip line, the first microstrip line is connected to a first end of the annular probe, and the second microstrip line is connected to a second end of the annular probe; the transition circuit part stretches into the rectangular waveguide, part or all of the annular probe is positioned in the rectangular waveguide, and the first microstrip line and the second microstrip line extend towards the direction far away from the rectangular waveguide.
In this embodiment, the rectangular waveguide is formed by combining an upper cavity and a lower cavity. Specifically, at least one of the upper cavity and the lower cavity is provided with a first groove, at least one of the upper cavity and the lower cavity is provided with a second groove, when one surfaces of the upper cavity and the lower cavity are oppositely attached together, the first groove forms a cavity in the rectangular waveguide, and the second groove forms a space for accommodating the transition circuit. Referring to fig. 2, the upper cavity and the lower cavity are respectively provided with a first groove, the upper cavity and the lower cavity are respectively provided with a second groove, when one surfaces of the upper cavity and the lower cavity are oppositely attached together, the first groove in the upper cavity corresponds to the first groove in the lower cavity in position, the first groove in the upper cavity and the first groove in the lower cavity are combined into a cuboid space, and the inner wall of the first groove is made of a metal material, so that the upper cavity, the lower cavity and the first groove form a rectangular waveguide; the second groove in the upper cavity corresponds to the second groove in the lower cavity in position, the second groove in the upper cavity and the second groove in the lower cavity are combined into a space, and the space can contain the transition circuit. Moreover, the space formed by the second groove is communicated with the space formed by the first groove, so that the transition circuit arranged in the space formed by the second groove can extend into the space formed by the first groove, namely the inner cavity of the rectangular waveguide.
Referring to fig. 3, the upper cavity and the lower cavity may be fixed together by a screw or the like to form a rectangular waveguide, and the first groove of the upper cavity and the first groove of the lower cavity are combined to form a cavity in the rectangular waveguide. The transition circuit further comprises a medium substrate, an annular probe, a first microstrip line and a second microstrip line, wherein the medium substrate bears the annular probe, the first microstrip line and the second microstrip line. Specifically, the ring probe, the first microstrip line and the second microstrip line can be manufactured on the dielectric substrate by a microstrip line manufacturing process.
In this embodiment, the ring probe may be in the shape of a broken ring, thereby forming two ports, i.e., a first port and a second port. The first port of the annular probe is connected with the first microstrip line, and the second port of the annular probe is connected with the second microstrip line. The shape of the ring probe may also be other shapes that are topologically the same as a broken circular ring, such as a rounded rectangle lacking one side as shown in fig. 3, or the like.
In this embodiment, fig. 3 may be regarded as an actual product assembly effect diagram of a circuit structure for inverse power distribution or synthesis, fig. 2 may be regarded as an actual simulation model of the circuit shown in fig. 3, and fig. 1 may be regarded as an ideal simulation model of the circuit shown in fig. 2. For the circuit shown in fig. 1, the end of the rectangular waveguide far from the transition circuit is used as a port 1, the end of the first microstrip line far from the rectangular waveguide is used as a port 2, and the end of the second microstrip line far from the rectangular waveguide is used as a port 3, and the circuit shown in fig. 1 is simulated, and the simulation result of the S parameter is shown in fig. 4, and the simulation result of the phase distribution of the port is shown in fig. 5. In FIG. 4, S11Shows the return loss, S, of the structure21Representing the transmission coefficient, S, from port 1 to port 231Representing the transmission coefficients of port 1 to port 3. In FIG. 5, Arg (S)21) Shows the phase distribution at output port 2, Arg (S)31) Indicating the phase distribution at the output port 3.
The operating principle of the circuits shown in fig. 1, 2 and 3 is that: because the circuit structure is a symmetrical structure, according to the electromagnetic theory, the waveguide mode magnetic field can excite high-frequency alternating current in the annular probe, and because of the structural symmetry, the excitation currents generated at the ports of the first microstrip line and the second microstrip line connected with the annular probe are also in equal amplitude and opposite phase, so that two paths of signals with equal amplitude and opposite phase can be output.
As can be seen from the simulation results shown in fig. 4 and 5, in the circuits shown in fig. 1, 2 and 3, the port 1 inputs signals, so that the port 2 and the port 3 achieve equal-amplitude and opposite-phase power distribution because the output signals are equal in amplitude and 180 degrees out of phase. While the circuits shown in fig. 1, 2 and 3 have reciprocity, port 1 achieves inverted power combining when port 2 and port 3 receive inverted signals.
In this embodiment, in order to achieve better matching effect, the length of the transition circuit extending into the rectangular waveguide is equal to a quarter of the operating wavelength. That is, if the signal frequency in the transition circuit corresponds to a wavelength λ, the length of the portion of the transition circuit that extends into the rectangular waveguide is λ
In this embodiment, referring to fig. 3, the transition circuit further includes a grounded coplanar waveguide carried by the dielectric substrate. The grounding coplanar waveguide is insulated from the first microstrip line, and the grounding coplanar waveguide is insulated from the second microstrip line. And a grounding coplanar waveguide is also arranged between the first microstrip line and the second microstrip line.
In this embodiment, the angle at which the dielectric substrate protrudes into the rectangular waveguide can be controlled. Specifically, TE in a rectangular waveguide and a plane on which a dielectric substrate is positioned10The distribution direction of the mode magnetic field is vertical.
TE in rectangular waveguide10The side view of the mode magnetic field distribution is shown in fig. 6 and the top view is shown in fig. 7. TE in a rectangular waveguide with a planar dielectric substrate10The distribution direction of the mode magnetic field is vertical, and the rectangular waveguide main mode TE10The magnetic field distribution of the modes being excited in the transition circuitThe current flow, and the electric field distribution of the TEM waves in the grounded coplanar waveguide after excitation by the ring probe, are shown in figure 8 in top view and figure 9 in side view.
From the results shown in FIGS. 8 and 9, TE in the rectangular waveguide was observed10The mode magnetic field can generate magnetic induction and mutual coupling excitation in the grounded coplanar waveguide to excite the grounded coplanar waveguide TE10And entering a mode waveguide transmission mode to realize interconnection of the grounded coplanar waveguide and the rectangular waveguide through a transition circuit, namely realizing interconnection of the grounded coplanar waveguide and the rectangular waveguide while realizing a power distribution or synthesis function.
In this embodiment, the position relationship between the first microstrip line and the second microstrip line in fig. 1, fig. 2, and fig. 3 may also be adjusted, so that the main portions of the first microstrip line and the second microstrip line are kept parallel, and the distance between the first microstrip line and the second microstrip line is reduced, which is expanded to a microstrip differential line. For example, the distance between the first microstrip line and the second microstrip line is smaller than the line diameter of the first microstrip line or the second microstrip line, the structure of the obtained waveguide-microstrip differential line transition circuit is as shown in fig. 10, 11 and 12, and the position relationship between the transition circuit and other parts such as the upper cavity and the lower cavity is not changed.
In this embodiment, fig. 12 may be regarded as an actual product assembly effect diagram for the inverse power distribution or synthesis circuit (regarded as an actual product assembly effect diagram for a waveguide-differential line transition structure obtained by expanding the inverse power distribution or synthesis circuit), fig. 11 may be regarded as an actual simulation model of the circuit shown in fig. 12, and fig. 10 may be regarded as an ideal simulation model of the circuit shown in fig. 11. For the circuit shown in fig. 10, one end of the rectangular waveguide far from the transition circuit is used as port 1, and the expanded differential line end is used as port 2. The simulation of the circuit shown in fig. 10 was performed, and the obtained S-parameter simulation result is shown in fig. 13. In FIG. 13, S11Representing the return loss, S, of the transition structure21Indicating the insertion loss of the transition structure.
As can be known from the simulation result shown in fig. 13, for the circuit structure for inverse power distribution or synthesis, when the distance between the first microstrip line and the second microstrip line is close, the differential line structure can be expanded, and the interferences received by the first microstrip line and the second microstrip line can be mutually cancelled, so that the circuit structure has a strong anti-interference capability, and therefore, the circuit structures shown in fig. 10, 11, and 12 can be used as a converter from a single-ended signal to a differential signal, so that the circuit structure has a strong anti-interference capability.
It should be noted that, unless otherwise specified, when a feature is referred to as being "fixed" or "connected" to another feature, it may be directly fixed or connected to the other feature or indirectly fixed or connected to the other feature. Furthermore, the descriptions of upper, lower, left, right, etc. used in the present disclosure are only relative to the mutual positional relationship of the constituent parts of the present disclosure in the drawings. As used in this disclosure, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. In addition, unless defined otherwise, all technical and scientific terms used in this example have the same meaning as commonly understood by one of ordinary skill in the art. The terminology used in the description of the embodiments herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used in this embodiment, the term "and/or" includes any combination of one or more of the associated listed items.
It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element of the same type from another. For example, a first element could be termed a second element, and, similarly, a second element could be termed a first element, without departing from the scope of the present disclosure. The use of any and all examples, or exemplary language ("e.g.," such as "or the like") provided with this embodiment is intended merely to better illuminate embodiments of the invention and does not pose a limitation on the scope of the invention unless otherwise claimed.
It should be recognized that embodiments of the present invention can be realized and implemented by computer hardware, a combination of hardware and software, or by computer instructions stored in a non-transitory computer readable memory. The methods may be implemented in a computer program using standard programming techniques, including a non-transitory computer-readable storage medium configured with the computer program, where the storage medium so configured causes a computer to operate in a specific and predefined manner, according to the methods and figures described in the detailed description. Each program may be implemented in a high level procedural or object oriented programming language to communicate with a computer system. However, the program(s) can be implemented in assembly or machine language, if desired. In any case, the language may be a compiled or interpreted language. Furthermore, the program can be run on a programmed application specific integrated circuit for this purpose.
Further, operations of processes described in this embodiment can be performed in any suitable order unless otherwise indicated herein or otherwise clearly contradicted by context. The processes described in this embodiment (or variations and/or combinations thereof) may be performed under the control of one or more computer systems configured with executable instructions, and may be implemented as code (e.g., executable instructions, one or more computer programs, or one or more applications) collectively executed on one or more processors, by hardware, or combinations thereof. The computer program includes a plurality of instructions executable by one or more processors.
Further, the method may be implemented in any type of computing platform operatively connected to a suitable interface, including but not limited to a personal computer, mini computer, mainframe, workstation, networked or distributed computing environment, separate or integrated computer platform, or in communication with a charged particle tool or other imaging device, and the like. Aspects of the invention may be embodied in machine-readable code stored on a non-transitory storage medium or device, whether removable or integrated into a computing platform, such as a hard disk, optically read and/or write storage medium, RAM, ROM, or the like, such that it may be read by a programmable computer, which when read by the storage medium or device, is operative to configure and operate the computer to perform the procedures described herein. Further, the machine-readable code, or portions thereof, may be transmitted over a wired or wireless network. The invention described in this embodiment includes these and other different types of non-transitory computer-readable storage media when such media include instructions or programs that implement the steps described above in conjunction with a microprocessor or other data processor. The invention also includes the computer itself when programmed according to the methods and techniques described herein.
A computer program can be applied to input data to perform the functions described in the present embodiment to convert the input data to generate output data that is stored to a non-volatile memory. The output information may also be applied to one or more output devices, such as a display. In a preferred embodiment of the invention, the transformed data represents physical and tangible objects, including particular visual depictions of physical and tangible objects produced on a display.
The above description is only a preferred embodiment of the present invention, and the present invention is not limited to the above embodiment, and any modifications, equivalent substitutions, improvements, etc. within the spirit and principle of the present invention should be included in the protection scope of the present invention as long as the technical effects of the present invention are achieved by the same means. The invention is capable of other modifications and variations in its technical solution and/or its implementation, within the scope of protection of the invention.
Claims (10)
1. Circuit arrangement for inverted power splitting or combining, characterized in that it comprises:
a rectangular waveguide;
a transition circuit; the transition circuit comprises an annular probe, a first microstrip line and a second microstrip line, the first microstrip line is connected with the first end of the annular probe, and the second microstrip line is connected with the second end of the annular probe; the transition circuit part extends into the rectangular waveguide, part or all of the annular probe is positioned in the rectangular waveguide, and the first microstrip line and the second microstrip line extend towards the direction far away from the rectangular waveguide.
2. The circuit structure for reverse phase power splitting or combining of claim 1, wherein the rectangular waveguide comprises an upper cavity and a lower cavity; at least one of the upper cavity and the lower cavity is provided with a first groove, at least one of the upper cavity and the lower cavity is provided with a second groove, the upper cavity and the lower cavity are combined into a whole, the first groove is used for forming a cavity in the rectangular waveguide, and the second groove is used for accommodating the transition circuit.
3. The circuit structure for reverse phase power splitting or combining of claim 1, wherein the transition circuit further comprises a dielectric substrate carrying the ring probe, the first microstrip line and the second microstrip line.
4. The circuit structure for reverse phase power splitting or combining of claim 3, wherein the transition circuit further comprises a grounded coplanar waveguide carried by the dielectric substrate.
5. The circuit structure for inverted power distribution or synthesis according to claim 4, wherein the grounded coplanar waveguide is insulated from the first microstrip line and the grounded coplanar waveguide is insulated from the second microstrip line.
6. The circuit structure for inverted power distribution or synthesis according to claim 4 or 5, wherein a portion of the grounded coplanar waveguide is located between the first microstrip line and the second microstrip line.
7. The circuit structure according to claim 3, wherein the first microstrip line is parallel to the second microstrip line, and the first microstrip line and the second microstrip line form a pair of differential lines.
8. The circuit structure for inverted power distribution or synthesis according to claim 7, wherein a distance between the first microstrip line and the second microstrip line is smaller than a line diameter of the first microstrip line or the second microstrip line.
9. The circuit structure for reverse phase power splitting or combining of any of claims 3-8, wherein the plane of the dielectric substrate and the TE in the rectangular waveguide10The distribution direction of the mode magnetic field is vertical.
10. The circuit structure for reverse phase power splitting or combining of claim 9, wherein the length of the transition circuit extending into the rectangular waveguide is equal to one quarter of the operating wavelength.
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