WO2016067394A1 - High-frequency device and method for manufacturing high-frequency device - Google Patents

High-frequency device and method for manufacturing high-frequency device Download PDF

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Publication number
WO2016067394A1
WO2016067394A1 PCT/JP2014/078787 JP2014078787W WO2016067394A1 WO 2016067394 A1 WO2016067394 A1 WO 2016067394A1 JP 2014078787 W JP2014078787 W JP 2014078787W WO 2016067394 A1 WO2016067394 A1 WO 2016067394A1
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high
metal
closed
metal plate
closed region
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PCT/JP2014/078787
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French (fr)
Japanese (ja)
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森本 康夫
田原 志浩
英樹 畠山
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三菱電機株式会社
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    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K9/00Screening of apparatus or components against electric or magnetic fields

Abstract

A high-frequency device is provided with: a metal housing 1 in which high-frequency modules 3a, 3b, 3c are mounted; and a metal plate 4 covering an opening of the metal housing 1, wherein the metal plate 4 is cut along an outline 10a of a closed region 10 positioned on the metal plate 4 while leaving an outline 10b of the closed region 10 uncut, and the closed region 10 is bent toward the inside of the metal housing 1 with the outline 10b left uncut serving as a bend position, thereby forming the closed region 10 into a resonator.

Description

Method for manufacturing a high frequency device and the high-frequency device

The present invention, for example, such as wireless communication devices and radar apparatus, a high-frequency device that implements the high-frequency components for processing a high frequency microwave and millimeter wave band to the inside, in particular, generated from a high frequency component that is mounted inside a high-frequency device that suppresses spatial coupling of the electromagnetic wave, and to a method of manufacturing the high-frequency device.

In general, in order to isolation of the high frequency device becomes a sufficient value in the range of the operating frequency, the cutoff frequency is sufficiently high in the case of using a high-frequency device as a waveguide, in the case of using a high-frequency device as a cavity , as the resonance frequency is sufficiently high, the dimensions of the RF module (frequency component) and package to be mounted to the high-frequency device is determined.
The high frequency module or package to be mounted to the high-frequency device outputs harmonic components. Therefore, as the isolation of the high frequency device becomes a sufficient value in the range of twice or three times the frequency of the operating frequency, the dimensions of the high-frequency module or package to be mounted to the high-frequency device is determined.

For example, in the high-frequency device disclosed in Patent Document 1 below, the conductivity of the cutoff block for dividing each circuit (metal blocks) provided, has a higher cutoff frequency in the high frequency device.
Further, a high frequency device disclosed in Patent Document 2 below, the printed circuit board that implements a plurality of high-frequency component, and a printed circuit board which digging is provided to accommodate the respective high-frequency components by solder electrically connected, while increasing the resonance frequency of the cavity are arranged to separate the high-frequency component.
Patent Document 1 and Patent Document 2, in the space in the high-frequency device, higher than the operating frequency of the high frequency components in the high frequency apparatus lowest order resonance frequency of the space of (space to blocking structure in the high-frequency device) it is the same technique at the point.

As the technique and another approach, without ensuring the blocking structure in the space in the high-frequency device, the operating frequency of the high frequency components, there is a technique to operate the space within the high-frequency device as a type of filter.
For example, following the high-frequency device disclosed in Patent Document 3, to the cover of the metal housing which accommodates a transceiver, by providing the unevenness of the metal at one wavelength interval of 4 minutes, a metal housing wave impedance of the electromagnetic wave propagating through the body constitute a filter by such different wavelength intervals 4 minutes.
By configuring such a filter, which suppresses the unwanted coupling between the metal housing of the high-frequency component.

JP 2009-170843 JP JP 2011-165931 JP JP 2000-307305 JP

Since the conventional high frequency device is constructed as described above, in the case of the Patent Documents 1 and 2, it is necessary to electrically and physically secured to means a metal block and the printed circuit board for shielding, size of the device there is a problem that and resulting in an increase in weight. Moreover, it is necessary to provide a metal block for shielding each high-frequency component, has a problem that it becomes difficult to implement a high-frequency component at a high density. Furthermore, the shorter the wavelength the more the operating frequency increases, especially GHz band or higher, another problem that the size of the package and the semiconductor device from becoming a wavelength order, it may not be able to be higher than the operating frequency of the cutoff frequency there were.

For patent document 3, it is necessary to provide the unevenness of the metal lid of the metal housing, there is a problem that led to an increase in weight. In particular, to suppress unnecessary coupling sufficiently, it is necessary to increase the difference in wave impedance due to the unevenness of the metal. For this purpose, it is necessary to increase the height difference of the unevenness, content increase in weight growing.
Also, cutting processing and casting of the metal block, since generally a high price, the provision of the unevenness of the metal has a problem requiring many expenses.

The present invention has been made to solve the above problems, in Katsu Ogata lightweight, it is possible to manufacture at low cost, to obtain a high-frequency device capable of high density mounting the operating frequency is high frequency component the interest.
Further, the invention aims to obtain a manufacturing method capable of producing a high-frequency apparatus as described above.

RF device according to the present invention includes a metal housing that implement high-frequency components therein, and a metal plate covering the opening of the metal housing, the outline of the closed region that is positioned on the metal plate as part cut remains in the inner After that the metal plate is cut along the closed region of the contour, the bending position a portion of the contour that remains without being cut, the closed area metal housing by bent in a direction, in which the closed region is to form a resonator.

According to the present invention, so as to leave cut part of the contour of the closed region being positioned on the metal plate, after the metal plate is cut along the contour of the closed region, the remaining without being cut as the position bent portion of the contour, by the closed region is bent inwardly of the metal housing, because the closed region is configured to form a cavity, in Katsu Ogata lightweight, it is possible to manufacture at low cost , the effect of high-frequency device is obtained which can be densely packed the operating frequency is high frequency components.

It is a side transparent view showing a high-frequency device according to a first embodiment of the present invention. Is a top view showing a before bending metal plates 4. It is a perspective view showing bending a metal plate 4 after processing. It is a side view showing a metal plate 4 after which bending seen from the viewpoint A and viewpoint B in Figure 3. It is a flowchart showing a manufacturing method of a high-frequency device according to a first embodiment of the present invention. It is a structural view of an electromagnetic field analysis of high-frequency device according to a first embodiment of the present invention. Is an explanatory diagram showing an electromagnetic field analysis result of the high frequency device of FIG. Is a top view showing the structure of a prototype of a high-frequency device according to a first embodiment of the present invention. It is a side view showing a prototype of a high-frequency device of FIG. Is an explanatory view showing the measurement results of the prototype of FIG. It is a side transparent view showing a modification A of a high-frequency device according to a first embodiment of the present invention. It is a side transparent view showing a modification B of high-frequency device according to a first embodiment of the present invention. It is a side transparent view showing a modification C of the high-frequency device according to a first embodiment of the present invention. It is a side transparent view showing a modification D of the high-frequency device according to a first embodiment of the present invention. It is a top view showing a before bending metal plates 4 in the modification E of the high-frequency device according to a first embodiment of the present invention. It is a top view showing a before bending metal plates 4 in the modification F of the high-frequency device according to a first embodiment of the present invention. It is a top view showing a before bending metal plates 4 in the modification G of the high-frequency device according to a first embodiment of the present invention. It is a top view showing a before bending metal plates 4 in the modification H of the high-frequency device according to a first embodiment of the present invention. It is a top view showing a before bending metal plates 4 in the modification I of the high-frequency device according to a first embodiment of the present invention. It is a top view showing a before bending metal plates 4 in the high-frequency device according to a second embodiment of the present invention. It is a top view showing a before bending metal plates 4 in the other high frequency device according to a second embodiment of the present invention. It is a top view of the bending showing a metal plate 4 before working in the high-frequency device according to a third embodiment of the present invention. It is a top view of the bending showing a metal plate 4 before working in the high-frequency device according to a fourth embodiment of the present invention. It is a top view of the bending showing an unprocessed metal plate 4 in the high-frequency device according to a fifth embodiment of the present invention. It is an explanatory diagram showing a shift position of the folding position when folding the plurality of closed regions 10. It is an explanatory diagram showing an electromagnetic field analysis result in the case of folding position when folding the plurality of closed regions 10 is shifted.

Hereinafter, in order to explain this invention in greater detail, the embodiments of the present invention will be described with reference to the accompanying drawings.
The first embodiment.
Figure 1 is a side transparent view showing a high-frequency device according to a first embodiment of the present invention.
In Figure 1, the metal housing 1, which implements the dielectric substrate 2, a high frequency device 3a dielectric substrate 2 is a high-frequency component for processing a high frequency microwave and millimeter wave bands, 3b, implement 3c there. High-frequency devices 3a, 3b, type 3c is not limited, for example, an amplifier, phase shifter, multiplier, balun, mixer, between the high-frequency board connecting portion, such as high-frequency connector are conceivable.
Metal plate 4 an opening of the metal housing 1 (in the figure, top) is a metal plate covering a metal plate 4 is provided with an L-shaped metal protrusions 5 that are bent inward direction of the metal casing 1 .
Metal casing cover 6 (that is L-shaped metal protrusions 5 are folded inwardly of the metal housing 1, part a hole is open) the opening of the metal plate 4 is a lid covering the, with a metal plate 4 It is attached to the metal housing 1 by screws 7.

Figure 2 is a top view showing a metal plate 4 before bending, and FIG. 3 is a perspective view showing a metal plate 4 after bending.
Further, FIG. 4 is a side view of the metal plate 4 after which bending seen from the viewpoint A and viewpoint B in Figure 3.
On bending of unprocessed metal plate 4, as shown in FIG. 2, a plurality of closed regions 10 (L-shaped metal projection 5 by closed region 10 is bent is formed) is positioned . In the example of FIG. 2, the closed region 10 of the 24 (= 4 6 ×) it is positioned.
In the example of FIG. 2, the shape of the closed region 10 is L-shaped, 10a, 10b represents the outline of a closed region 10.
11 is a hole that has been deleted in order to pass the screw 7.

After the metal plate 4 is turned off along the contour 10a of the closed region 10 which is positioned on the metal plate 4, FIG. 3 and FIG. 4, the closed region 10 that remain cut contour 10b ( as the position bent portion of the contour of the closed region 10), the closed area 10 is formed L-shaped metal projection 5 by being bent inward direction of the metal casing 1, a resonator whose L-shaped metal protrusions 5 to.

Next, a method for manufacturing a high-frequency device of FIG.
Figure 5 is a flowchart showing a manufacturing method of a high-frequency device according to a first embodiment of the present invention.
First, on the metal plate 4, it determines the shape of the closed region 10 (L-shaped in the first embodiment), then the positioning of the closed region 10 to form an L-shaped metal protrusions 5 forming the cavity (step ST1).
Next, a metal plate cutting step of cutting the metal plate 4 along the outline 10a of the closed area 10 (step ST2). In this case, the outline 10b of the closed region 10, in order to bend position of the closed region 10, so as leave without cutting.

Then, as the position bent contour 10b of the closed region 10 that remain cut in the metal plate cutting step, the bending step bends the closed area 10 (step ST3).
In the high frequency device of FIG. 1, the bending angle of the closed region 10 at the folding position indicates an example is 90 degrees, bending angle of the closed region 10 may be an angle other than 90 degrees.
Finally, the closed region 10 bent in bending step, inside the high-frequency devices 3a, 3b, enters the inside of the metal housing 1 that implement 3c, and so as to cover the opening of the metal casing 1 performs attaching step of attaching the metal plate 4 to the metal housing 1 (step ST4).
Mounting of the metal plate 4 to the metal housing 1 is carried out by passing the screw 7 into the hole 11, it is fixed to the metal housing 1 of metal plate 4 and the metallic casing cover 6 together by screws 7.

Next, a description will be given of an effect of the high-frequency device according to the first embodiment.
Here, as using high-frequency device as a waveguide, it is implementing an electromagnetic field analysis of the high frequency device by the finite element method.
Figure 6 is a structural view of an electromagnetic field analysis of high-frequency device according to a first embodiment of the present invention, FIG. 7 is an explanatory diagram showing an electromagnetic field analysis result of the high frequency device of FIG. Here, the suppression in the high frequency device frequency (frequency of the suppression target) and 10 [GHz].
The analysis structure, L-shaped metal projection 5 protrudes from the inner wall of the waveguide, in the example of FIG. 6, with five L-shaped metal protrusions 5 in the lateral direction of the front view, the propagation direction of a side view It comprises four L-shaped metal protrusions 5.
Each dimension L0 ~ L9 in analyzing the structure of Figure 6 is as follows.
Dimension L0 = 25 [mm] dimensions L1 = 5 [mm]
Dimension L2 = 3 [mm] dimensions L3 = 1.5 [mm]
Dimensions L4 = 5 [mm] dimension L5 = 3.5 [mm]
Dimensions L6 = 1.5 [mm] dimension L7 = 7.5 [mm]
Dimensions L8 = 2 [mm] dimension L9 = 5.5 [mm]

Further, in this analysis structure, the distance from the point where the L-shaped metal projection 5 is in contact with the waveguide (the short-circuit end), to the open end of the L-shaped metal protrusions 5 (tip) is suppression frequency (10 [GHz] ) in the length of one wavelength of about 4 minutes.
To confirm the effect of the first embodiment are analyzed 25 [mm] × 5 [mm] rectangular waveguide also together of.

Passing the amplitude of the input ports in TE01 mode and TE02 mode is a fundamental mode of the waveguide to the output port [dB / 10 mm], as shown in FIG. 7, is suppressed in the suppression frequency (10 [GHz]) there.
L-shaped metal projection 5 has one end is short-circuited, a quarter wavelength resonator which is opened at the other end, L-shaped metal projection 5 by itself, operates as a band suppression filter.
Therefore, in the example of FIG. 6, is provided with the four L-shaped metal protrusions 5 in the propagation direction of the side view, the number of propagation directions of the L-shaped metal projection 5 is obtained suppression effect even in the case of one . However, as the number of propagation directions of the L-shaped metal protrusions 5, large suppression effect can be obtained.

Further, the suppression effect, the higher the proportion of dimension L2 occupied in the dimensions L1, higher.
In particular, the dimension L1 direction, the electric field intensity of the TE01 mode [V / m] is uniform, the higher the proportion of the dimension L2 occupying the dimension L1, the suppression effect is high in proportion to the ratio.
In the high frequency device of the first embodiment, since the protruding bending the closed region 10 of the metal plate 4, it is easy to increase the size L2, the weight of the high-frequency device does not increase when the .
The field distribution is not uniform in the dimension L1 direction (propagation mode, resonant mode) even in the higher proportion of dimension L2 occupied in the dimensions L1, suppression effect becomes high.
In order to suppress the fundamental mode (TE01 mode) more effectively, in the vicinity of the center of a strong dimension L0 direction of the electric field strength may be as the L-shaped metal protrusions 5 are deployed much.

Next, to evaluate the prototypes simulating the metal housing 1, described isolation effect in the metal housing 1.
Figure 8 is a top view showing the structure of the prototype high-frequency device according to a first embodiment of the present invention, FIG. 9 is a side view showing a prototype of a high-frequency device of FIG. Further, FIG. 10 is an explanatory diagram showing the measurement results of the prototype of FIG. Here, it is the 10 [GHz] the suppression frequency.
In the measurement structure of FIG. 8, the dielectric substrate 2 is mounted on the metal casing 1.
The dielectric substrate 2 are mounted termination circuit 21 for terminating the transmission line 22, transmission line 22 is connected to the coaxial cable 24 via a high-frequency connector 23.

Here, three conditions are measured ([no lid, [lid there], [Embodiment 1]) under the passage of the port (1) to port (2) [dB]. Here, throughput of the port (1) to port (2) is a binding amount through the space, the isolation effect as the amount of passage is small is high.
Conditions [without lid], as shown in FIG. 9 (a), a metal casing cover 6 is not provided, the condition is not provided also L-shaped metal protrusions 5.
Conditions [the lid there], as shown in FIG. 9 (b), the metal casing cover 6 is provided, the condition is not provided with the L-shaped metal protrusions 5.
Conditions of First Embodiment, as shown in FIG. 9 (c), a metal casing cover 6 is provided, and is a condition that has an L-shaped metal protrusions 5.

As the measurement results of FIG. 10, changing the condition of the lid there from conditions [without lid, it can be seen that isolation is deteriorated.
Also, changing from the condition of [the lid there] on the condition of Embodiment 1, the suppression frequency (10 [GHz]), it can be seen that isolation is improved.

In the manufacturing method of the high-frequency device according to the first embodiment, the length and shape of the L-shaped metal projection 5 to be projected can be easily adjusted by cutting or bending a metal plate 4. Therefore, it is possible to high-frequency devices 3a mounted on the dielectric substrate 2, 3b, in accordance with the height of the 3c, to project the L-shaped metal protrusions 5.
Therefore, the high-frequency device of the first embodiment is also applicable to space as it is impossible to ensure the blocking structure.
That is, the high-frequency device of the embodiment 1, since the metal housing 1 there is no need to separate the metal block, the operating frequency is high frequency devices 3a, 3b, it is possible to implement a high density and 3c RF device it is possible to achieve the miniaturization.
The metal plate 4, because compared to the metal block or the dielectric substrate 2, a significantly lightweight, it is possible to reduce the weight of the high-frequency device.
Further, as the cutting of the metal plate 4, since it is possible such as deletion by deleting or punched by etching or laser, it can be suppressed at low cost manufacturing costs.

[Modification A]
In the first embodiment, the mounting metal casing cover 6, although the ones attached to the metal housing 1 by a screw 7 with the metal plate 4, a metal casing cover 6 is in the metal casing 1 is may have a structure not, it is possible to achieve the same effect.
Figure 11 is a side transparent view showing a modification A of a high-frequency device according to a first embodiment of the present invention.
As shown in FIG. 11, by omitting the metallic casing cover 6, high-frequency devices 3a to be mounted on the metal housing in 1, 3b, while reducing the isolation of inter 3c, since members is reduced, further reduction it is possible to reduce the cost.

[Modification B]
In the first embodiment, the metal casing cover 6, although the ones attached to the metal housing 1 by a screw 7 with the metal plate 4, a metal casing cover 6 and the metal plate 4 is adhesive It may be one which is fixed, it is possible to achieve the same effect.
Figure 12 is a side transparent view showing a modification B of high-frequency device according to a first embodiment of the present invention.
In the example of FIG. 12, a metal casing cover 6 and the metal plate 4 is fixed by the adhesive 8. The adhesive agent 8 is not an indispensable condition that a conductive adhesive, it is desirable that the conductive adhesive.

[Modification C]
In the first embodiment, the metal casing cover 6, although the ones attached to the metal housing 1 by a screw 7 with the metal plate 4, a metal casing cover 6 and the metal plate 4 is screw 7 It may be one that is secured by another screw and can achieve the same effect.
Figure 13 is a side transparent view showing a modification C of the high-frequency device according to a first embodiment of the present invention.
In the example of FIG. 13, a metal casing cover 6 and the metal plate 4 is fixed by screws 9.

Modification D]
In the first embodiment, the metal casing cover 6, although the ones attached to the metal housing 1 by a screw 7 with the metal plate 4, a metal casing cover 6 and the metal plate 4 is separate there may be a thing is attached to the metal housing 1 by a screw, it is possible to achieve the same effect.
Figure 14 is a side transparent view showing a modification D of the high-frequency device according to a first embodiment of the present invention.
In the example of FIG. 14, attached by utilizing a step is provided in the metal casing 1, a metal casing cover 6 is attached to the metal housing 1 by a screw 7a, the metal plate 4 to the metal housing 1 by screws 7b It is.

[Modification E]
In the first embodiment, the shape is the closed region 10 of the L-shape is positioned on the metal plate 4, that is closed area 10 of the L-shaped folded, it showed that L-shaped metal projection 5 is formed , the shape of the closed region 10 which is positioned on the metal plate 4 is not limited to the L-shaped, that the closed region 10 other than the L-shaped is bent, be those metal projection other than L-shaped is formed at best, you can achieve the same effect.
Figure 15 is a top view showing a before bending metal plates 4 in the modification E of the high-frequency device according to a first embodiment of the present invention.
In the example of FIG. 15, a square-shaped closed region 10 are positioned on the metal plate 4, by rectangular closed region 10 is folded, rectangular metal projection is formed, the rectangular metal projection There a resonator.

[Modification F]
In the first embodiment, the shape is the closed region 10 of the L-shape is positioned on the metal plate 4, that is closed area 10 of the L-shaped folded, it showed that L-shaped metal projection 5 is formed , the shape of the closed region 10 which is positioned on the metal plate 4 is not limited to the L-shaped, that the closed region 10 other than the L-shaped is bent, be those metal projection other than L-shaped is formed at best, you can achieve the same effect.
Figure 16 is a top view showing a before bending metal plates 4 in the modification F of the high-frequency device according to a first embodiment of the present invention.
In the example of FIG. 16, closed area 10 of the T-shape is positioned on the metal plate 4, that is closed region 10 of the T-shaped bent, T-shaped metal protrusions are formed, the T-shaped Jo metal projections constitute a resonator.

[Modification G]
In the first embodiment, the shape is the closed region 10 of the L-shape is positioned on the metal plate 4, that is closed area 10 of the L-shaped folded, it showed that L-shaped metal projection 5 is formed , the shape of the closed region 10 which is positioned on the metal plate 4 is not limited to the L-shaped, that the closed region 10 other than the L-shaped is bent, be those metal projection other than L-shaped is formed at best, you can achieve the same effect.
Figure 17 is a top view showing a before bending metal plates 4 in the modification G of the high-frequency device according to a first embodiment of the present invention.
In the example of FIG. 17, closed area 10 of the half-loop shape is positioned on the metal plate 4, by closed area 10 of the half-loop shape is bent, semi-loop-shaped metal protrusions are formed, the half-loop Jo metal projections constitute a resonator.

[Modification H]
In the first embodiment, although the performs a metal plate cutting step of cutting the metal plate 4 along the outline 10a of the plurality of closed regions 10 that are positioned on the metal plate 4, a plurality of closed regions 10 a portion other than the contour 10a also by cutting, may be formed of metal protrusions.
Figure 18 is a top view showing a before bending metal plates 4 in the modification H of the high-frequency device according to a first embodiment of the present invention.
In the example of FIG. 18, as well as cutting the metal plate 4 along the outline 10a of the closed region 10, by cutting the portion 10c of the non-contour 10a of the closed region 10, has removed the region 10d.
In this way, by cutting the portion 10c of the non-contour 10a of the closed region 10, since it is possible to collectively cutting metal plate 4 with respect to a plurality of closed regions 10, it is possible to reduce the processing costs of the high-frequency device it can.
In the case of forming the metal projection by cutting the metal plate 4 along the outline 10a of the closed area 10 in a linear constraints milling apparatus (e.g., the minimum width of the etching process, and the space required for punching) it is necessary to consider, to remove large areas 10d, it is not necessary to consider the limitations of milling apparatus, it is possible to reduce the processing costs of the high-frequency device.

[Modification I]
In the first embodiment, as a position bent contour 10b, showed those bent a plurality of closed regions 10 in the same direction, it may be bent a plurality of closed regions 10 in different directions.
Figure 19 is a top view showing a before bending metal plates 4 in the modification I of the high-frequency device according to a first embodiment of the present invention.
In the example of FIG. 19, the outline 10b is folded position and closed area 10 in the upper side of the figure, a closed region 10 of the contour 10b is bending position is on the right side in the figure are arranged alternately.
Thus, in addition to the metal protrusions formed by the closed region 10 is folded in the outline 10b of the upper side in the figure, a metal protrusions formed by the closed region 10 by the contour 10b on the right in the drawing are bent to join, with a high effect of suppressing the propagation direction in FIG. 6 (b) is obtained, also in the direction of L0 in FIG. 6 (a), the higher suppression effect is obtained.

The second embodiment.
In the first embodiment, although each of the plurality of L-shaped metal protrusions 5 which forms a resonator shows an example of the same size, those L-shaped metal protrusions 5 having different sizes are mixed it may be.
Figure 20 is a top view showing a metal plate 4 before bending in the high-frequency device according to a second embodiment of the present invention, in FIG. 20, so description Figure 2 designate the same or corresponding parts.

In addition to the closed area 10 is formed on the metal plate 4, the closed region 30 in magnitude than the closed region 10 is smaller is positioned.
Like the closed region 10, after the metal plate 4 is turned off along the contour 30a of the closed region 30, the position bent contour 30b of the closed region 30 that remain cut (a portion of the outline of the closed region 30) as a closed region 30 is formed an L-shaped metal projection 5 by being bent inward direction of the metal casing 1, the L-shaped metal protrusions 5 constitute a resonator.
The L-shaped metal protrusions 5, since those closed area 30 in magnitude than the closed region 10 is small bent, as in the first embodiment, L-shaped formed by the closed region 10 is folded It becomes smaller magnitude than metal projection 5.

Thus, by adding the L-shaped metal protrusions 5 formed by closed area 30 is bent, in addition to the suppression frequency by L-shaped metal protrusions 5 formed by the closed region 10 is folded, closed to join suppression frequency by L-shaped metal protrusions 5 formed by region 30 is folded, an effect which can obtain a high isolation effect in a plurality of frequency bands.

In the second embodiment, it is positioned closed regions 10, 30 having different sizes on the metal plate 4, that the size is bent is different from the closed area 10, 30, L-shaped metal protrusions having different sizes Although 5 showed what is formed, the shape on the metal plate 4 are different closed region positioning, that closed regions of different shapes is bent, which shape is different metal projection is formed it may be.
Figure 21 is a top view showing a metal plate 4 before bending in other high-frequency device according to a second embodiment of the present invention, in the example of FIG. 21, as closed area different shapes on the metal plate 4, L-shaped closed region 10 and T closed region 31 of the shape of is positioned.
In Figure 21, the closed region 31 of the closed region 10 and the T-shape of the L-shaped indicates an example that is positioned, this is only an example, for example, a closed region of the closed region 10 and the square of the L-like There may be positioned.

Like the closed region 10, after the metal plate 4 is turned off along the contour 31a of the closed region 31 of the T-contour 31b of the closed region 31 that remain cut (a portion of the outline of the closed region 31) as the bending position, T-shaped closed region 31 is a metal projection of T-shape by being bent inward direction of the metal casing 1 is formed, the T-shaped metal protrusions constituting the resonator.
Thus, by adding a T-shaped metal protrusions formed by the closed region 31 of the T is bent, the other suppression frequency by L-shaped metal protrusions 5 formed by the closed region 10 is folded in, to join suppression frequency by T-shaped metal protrusions formed by the closed area 31 is bent, an effect which can obtain a high isolation effect in a plurality of frequency bands.

Embodiment 3.
In first and second embodiments, independently plurality of closed regions 10, has been shown what is positioned on the metal plate 4, among the plurality of closed regions 10 that are positioned on the metal plate 4 , or may be a part of the contour 10a of the closed region 10 which are adjacent are common.
Figure 22 is a top view showing a third metal plate 4 before bending in the high-frequency device according to the embodiment of the present invention, in FIG. 22, so description Figure 2 designate the same or corresponding parts.
In the example of FIG. 22, in the figure, a plurality of closed regions 10 are arranged in the lateral direction, it is common a part of the contour 10a.
For example, the leftmost closed region 10 that are circled, and the second closed region 10 from the left, are common part (contour is represented by 10e) of the contour 10a.

Contour 10a of the closed area 10, after performing the metal plate cutting step of cutting the metal plate 4 along 10e, as a position bent contour 10b of the closed region 10 that remain cut in the metal plate cutting step, the closed region by performing the bending step bends the 10, similarly to the first and second embodiments, a plurality of L-shaped metal projection 5 (or metal projection of another shape), but are formed, closed and adjacent areas by sharing the part of the contour 10a of 10, than if a plurality of closed regions 10 are independent, since the region to cut the metal plate 4 in the metal plate cutting step is reduced, the processing cost of the high-frequency device effect can be reduced is obtained.

Embodiment 4.
In the third embodiment, among the plurality of closed regions 10 that are positioned on the metal plate 4, it showed that some of the contour 10a of the closed region 10 which are adjacent are common, metal among the plurality of closed regions 10 that are positioned on the plate 4, the outline 10a of the portion cut may be those that are connected to each other.
Figure 23 is a top view showing a metal plate 4 before bending in the high-frequency device processing according to a fourth embodiment of the invention, in FIG. 23, so description Figure 2 designate the same or corresponding parts.
In the example of FIG. 23, the outline 10a of all of the closed region 10 which is positioned on the metal plate 4 (the contour of the portion excluding the contour 30b to be folded position), as can be traced in one stroke, connected to each other ing.
Thus, by the contour 10a of all of the closed region 10 are connected to each other, in a single metal plate cutting step, for cutting the metal plate 4 with respect to all of the closed region 10 completes, the processing cost of the high-frequency device effect capable of further reducing is obtained.

Embodiment 5.
In the first to fourth embodiments, the position bent every closed region 10 which is positioned on the metal plate 4 has (outline 30b of the closed region 10) are determined, those folding each closed region 10 of the independent shows.
In the fifth embodiment, among the plurality of closed regions 10 that are positioned on the metal plate 4, and folded folding the plurality of closed regions 10 are aligned on a straight line in a batch position are determined, bent its a plurality of closed regions 10 is described what are folded inwardly of the metal housing 1 in bulk in position.

Figure 24 is a top view showing a metal plate 4 before bending in the high-frequency device according to a fifth embodiment of the present invention, in FIG. 24, so description Figure 2 designate the same or corresponding parts.
Bending position 41, among the plurality of closed regions 10 that are positioned on the metal plate 4, a position bent at once a plurality of closed regions 10 are arranged in a straight line.
The region 53 will be described with reference to FIG. 25 described later.

Figure 25 is an explanatory diagram showing a shift position of the folding position when folding the plurality of closed regions 10.
In particular, FIG. 25 (a) shows a shift position 51 in the high-frequency device according to the first embodiment, FIG. 25 (b) shows the shift position 52 in the high-frequency device according to the fifth embodiment.
Region 53 is in the range of areas where the displaced position 52 may be present.
Figure 26 is an explanatory diagram showing an electromagnetic field analysis result in the case of deviation folded position when folding the plurality of closed regions 10.

For the first embodiment, for example, if the amount of deviation between the contour 10b and a folded position shift position 51 is 400 [um], as shown in FIG. 26, shift suppression band by the high-frequency device 6 It has become .2%.
For the fifth embodiment, for example, if the amount of deviation between the bending position 41 displaced position 52 is 400 [um], as shown in FIG. 26, shift suppression band by the high-frequency device is 3.4% has become, it is smaller than the first embodiment.

Thus, when bending the plurality of closed regions 10 collectively bending position 41, even the amount of deviation is the same, than the first embodiment, the reason for deviation of the suppression band is reduced, the following it is as.
In the fifth embodiment, it can be considered a shift position 52 and the ground conductor, a plurality of closed regions 10 position of the short-circuit portion is uniformly displaced in bending in bulk, between the respective closed region 10, the short circuit portion since the position is never shifted relative deviation suppression band is reduced.
In the bending influence of an error of R of the closed region 10 at the time of manufacture (bending impact of large and small R), even if the deviation in the suppression band occurs for the same reason, than the first embodiment, this embodiment Write mode 5 is, deviation of the suppression band is reduced.

As it can be seen from the above description, according to the fifth embodiment, among the plurality of closed regions 10 that are positioned on the metal plate 4, folded folding the plurality of closed regions 10 are aligned on a straight line in a batch position 41 is determined, the plurality of closed regions 10 in its folded position 41 is configured to be folded inwardly of the metal housing 1 at once, the bending position 41 when bending the plurality of closed regions 10 even if it was shifted, as in the first embodiment, than when bending the respective closed region 10 independently an effect capable of reducing the deviation of the suppression band.
Moreover, for bending the plurality of closed regions 10 collectively, also Kanade effect capable of suppressing the processing cost of bending.

Incidentally, the present invention is within the scope of the invention, it is possible to omit any component deformation or in each of the embodiments of any of the components of a free combination, or each of the embodiments, the respective embodiments .

The present invention high-frequency device according to is suitable for what needs to be sufficiently suppressed electromagnetic wave space bonds generated from the high-frequency components are mounted inside.

1 the metal housing, second dielectric substrate, 3a, 3b, 3c frequency device (high-frequency component), 4 metal plates (metal plate), 5 L-shaped metal protrusions (resonator), 6 metal housing lid, 7, 7a, 7b screws, 8 an adhesive, 9 screws, 10 closed region, 10a closed region of the contour, (part of the contour of the closed region that remain cut) 10b closed region of the contour, portions other than the contour 10a and 10c closed area , 10d region contour being 10e common, 11 holes, 21 terminating circuit, 22 a transmission line, 23 high-frequency connector, 24 coaxial cable, the remaining 30 closed region, 30a closed region contour, without cut 30b closed region contour ( a part of the contour of the closed region is), 31 closed region, 31a closed region contours, a portion of the contour of the closed region remaining contour (without cut of 31b closed region), 41 folded position, 51 and 52 shift position, 53 Area.

Claims (13)

  1. A metal housing that implement high-frequency components therein,
    In the high frequency device that includes a metal plate that covers the opening of the metal housing,
    Wherein as a part of the contour of the closed region being positioned on the metal plate cut remains, said after the metal plate is cut along the closed region of the contour, a part of the contour that remains without being cut as the folding position, by the closed region is bent inwardly of said metal housing, a high frequency device, wherein the closed region forms a resonator.
  2. RF device according to claim 1, wherein the metal housing cover covering the opening portion of the metal plate is attached to the metal housing.
  3. RF device according to claim 2, characterized in that the metal plate is fixed to said metal casing cover.
  4. Claims from bending position of the closed region forms the resonator, the distance to the position of the tip of the closed region, characterized in that has a length of a quarter wavelength at the frequency of the suppression target frequency device of claim 1, wherein.
  5. RF device according to claim 1, wherein the shape of the closed region forms the resonator is L-shaped.
  6. RF device according to claim 1, wherein the bending angle of the closed area in the folded position is 90 degrees.
  7. As the closed region, a plurality of closed regions are positioned on the metal plate, that said plurality of closed regions are folded inwardly of the metal housing, the plurality of closed area forms a resonator RF device according to claim 1, characterized in that there.
  8. Wherein in said plurality of closed regions forms a resonator, high-frequency device according to claim 7, wherein the closed region having different sizes is characterized in that a mixture.
  9. In said plurality of closed regions forms the resonator, a high frequency apparatus according to claim 7, wherein the closed areas have different shapes is characterized in that a mixture.
  10. Among the plurality of closed regions being positioned on the metal plate, a part of the contour of the closed region to be adjacent are common high-frequency apparatus according to claim 7, wherein.
  11. Of the contour of the plurality of closed regions being positioned on the metal plate, the high-frequency device according to claim 7, wherein the outline are connected to each other of the portion cut.
  12. Among the plurality of closed regions being positioned on the metal plate, folded folding the plurality of closed regions are arranged in a straight line in a batch position has been determined, the plurality of closed regions in said folded position collectively frequency apparatus according to claim 7, wherein the bent inwardly of the metal housing.
  13. As part of the contour of the closed region being positioned on the metal plate cut remains, and the metal plate cutting step of cutting the metal plate along the contour of the closed region,
    As the position bent portion of the contour that remains without being cut by the metal plate cutting step, the bending step bends the closed area,
    The folded closed region that is bent in the process enters the inside of the metal housing that implement high-frequency components therein, and to cover the opening of the metal housing, wherein the metal housing of the metal plate It is attached to, so as to cover the opening portion of the metal plate, the manufacturing method of the high-frequency device and a mounting step of mounting a metallic casing cover to the metal housing.
PCT/JP2014/078787 2014-10-29 2014-10-29 High-frequency device and method for manufacturing high-frequency device WO2016067394A1 (en)

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JP2016556106A JP6184610B2 (en) 2014-10-29 2014-10-29 Method for manufacturing a high frequency device and the high-frequency device
PCT/JP2014/078787 WO2016067394A1 (en) 2014-10-29 2014-10-29 High-frequency device and method for manufacturing high-frequency device

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JP2000307305A (en) * 1999-04-26 2000-11-02 Hitachi Ltd High frequency communication equipment
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JP6184610B2 (en) 2017-08-23 grant

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