CN103904391A - Multi-layer hybrid-mode hexagonal substrate integrated waveguide filter - Google Patents

Multi-layer hybrid-mode hexagonal substrate integrated waveguide filter Download PDF

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Publication number
CN103904391A
CN103904391A CN201410136134.6A CN201410136134A CN103904391A CN 103904391 A CN103904391 A CN 103904391A CN 201410136134 A CN201410136134 A CN 201410136134A CN 103904391 A CN103904391 A CN 103904391A
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hexagon
resonant cavity
metal layer
coupling
medium substrate
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CN103904391B (en
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徐自强
张根
郭俊宇
夏红
程革胜
杨邦朝
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University of Electronic Science and Technology of China
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University of Electronic Science and Technology of China
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Abstract

The invention discloses a multi-layer hybrid-mode hexagonal substrate integrated waveguide filter which is high in out-of-band selectivity, small in size and low in loss. An included angle is formed between the coplanar waveguide input end and the coplanar waveguide output end of the filter. Due to the loading effect of a hexagonal coupling slot composite structure arranged on a first metal layer, a resonant secondary mode, a left tilted non-resonant higher mode and a right tilted non-resonant higher mode in cavities can be effectively excited, electromagnetic coupling between a filter source and a load can also be excited, and a signal transmission path is effectively increased. In this way, on the basis of an original transmission zero, two transmission zeros are additionally obtained, coupling between a first resonant cavity and a second resonant cavity can be achieved through two symmetrically distributed V-shaped coupling slots formed in a second metal layer, a fourth transmission zero is generated, so that the width of a stop band is increased, and the attenuation of the stop band is increased. Meanwhile, the multi-layer hybrid-mode hexagonal substrate integrated waveguide filter is low in loss and small in size, thereby being suitable for being popularized and applied in the technical field of microwaves and millimeter waves.

Description

Multilayer is mixed mould hexagon substrate integral wave guide filter
Technical field
The present invention relates to microwave and millimeter wave technical field, be specifically related to a kind of multilayer and mix mould hexagon substrate integral wave guide filter.
Background technology
Filter is one of components and parts the most frequently used in communication system, and the quality of its performance directly has influence on the quality of Circuits System.Traditional filter is generally divided into metal waveguide filter and planar microstrip or band line structure filter.Traditional metal waveguide filter has that loss is low, Q value is high, good selective, but have that volume is large, processed complex and be difficult to integrated shortcoming with planar circuit.Though it is integrated that micro-band or band line filter are easy to planar circuit, its loss is large, Q value is low, particularly in high-frequency band, exists compared with large radiation, thereby affects circuit stability.
Filter based on substrate integrated waveguide technology is in having retained the feature that metal waveguide filter Q value is high, selectivity is good, also have planar microstrip and the advantage integrated, cost is low, easy to process that is easy to line filter concurrently, be subject to paying close attention to widely in recent years.Along with the scarcity day by day of frequency spectrum resource, transmission zero to filter and selectivity require higher, and in the design of traditional substrate integral wave guide filter, the transmission zero that N rank resonant cavity obtains generally can only obtain N-2, transmission zero as more in need, can only realize by the mode that increases resonant cavity number, but the shared area of substrate integration wave-guide RSPUDTcell is still relatively large, if resonant cavity number increases, filter will take more area in circuit, be unfavorable for very much meeting the volume of Modern Communication System to filter, the harsh requirement that selectivity and integrated level aspect propose.
Summary of the invention
Technical problem to be solved by this invention is to provide a kind ofly mixes mould hexagon substrate integral wave guide filter with outer selectivity compared with multilayer high and that volume is little, loss is low.
The present invention solves the problems of the technologies described above adopted technical scheme: this multilayer is mixed mould hexagon substrate integral wave guide filter, comprise the first metal layer being cascading from top to bottom, first medium substrate, the second metal level, second medium substrate, the 3rd metal level, on described the first metal layer, be provided with co-planar waveguide input, co-planar waveguide output, between described co-planar waveguide input and co-planar waveguide output, there is angle, on described first medium substrate, be provided with the upper plated-through hole array that runs through first medium substrate, described upper plated-through hole array and the first metal layer, the second metal level surrounds hexagonal the first resonant cavity jointly, on described second medium substrate, be provided with the lower plated-through hole array that runs through second medium substrate, described lower plated-through hole array and the second metal level, the 3rd metal level surrounds hexagonal the second resonant cavity jointly, described the second resonant cavity be positioned at the first resonant cavity under, on described the first metal layer, be provided with hexagon coupling slot combining structure, described hexagon coupling slot combining structure is positioned at the first resonant cavity, described hexagon coupling slot combining structure comprises that runs through a first metal layer successively, the metallization coupling through hole of first medium substrate, be arranged on a hexagon coupling slot and two bent grooves on the first metal layer, described metallization coupling through hole is positioned at the space surrounding of hexagon coupling slot, described hexagon coupling slot is positioned at the space that two bent grooves surround, on described the second metal level, be provided with two symmetrical V-arrangement coupling slots, described two V-arrangement coupling slots are positioned at the second resonant cavity and the Central Symmetry setting around the second resonant cavity.
Further, the angle between described co-planar waveguide input and co-planar waveguide output is 115~125 °.
Further, described golden the first metal layer, the second metal level, the 3rd metal level adopt gold or silver to be made.
Further, described first medium substrate, second medium substrate adopt the microwave-medium ceramics of dielectric constant within the scope of 1-20 to be made.
Beneficial effect of the present invention: have angle between the co-planar waveguide input of multilayer mixing mould hexagon substrate integral wave guide filter of the present invention and co-planar waveguide output, and by being arranged on the loading effect of the hexagon coupling slot combining structure on the first metal layer, both the effective secondary mould of resonance in actuating cavity cavity, and left-leaning and two disresonance higher modes of Right deviation, again can excitation filter source and load between electromagnetic coupled, effectively increase signal transmission path, thereby two transmission zeros of extra acquisition on the basis of an original transmission zero, due to the second resonant cavity be positioned at the first resonant cavity under, can realize the coupling between the first resonant cavity and the second resonant cavity by two symmetrical V-arrangement coupling slots that are arranged on the second metal level, produce again the 4th transmission zero, further broadening resistance band improve stopband attenuation amount, and the layout characteristics of resonant cavity vertical distribution of the present invention, without taking more circuit area, make multilayer mix the small volume of mould hexagon substrate integral wave guide filter, the simultaneously also vertical more resonant cavity of cascade according to demand, in addition, only use two resonant cavitys just can realize four limits and transmission zero, and traditional cross coupling cavity filter is realized six cavitys of similar performance need, therefore it is lower that multilayer of the present invention is mixed the loss of mould hexagon substrate integral wave guide filter, moreover, by controlling co-planar waveguide input, position and the angle of co-planar waveguide output and hexagon coupling slot structure, can adjust flexibly the position at four zero points, meet the demand of practical application.
Accompanying drawing explanation
Fig. 1 is the three-dimensional structure schematic diagram that multilayer of the present invention is mixed mould hexagon substrate integral wave guide filter;
Fig. 2 multilayer of the present invention is mixed the coupling topological diagram of mould hexagon substrate integral wave guide filter, wherein R1 and R2 represent two resonance secondary moulds of the first resonant cavity, R3 and R4 represent two resonance secondary moulds of the second resonant cavity, and R5 and R6 represent "Left"-deviationist and two the disresonance higher modes of Right deviation in the first resonant cavity;
Fig. 3 multilayer of the present invention is mixed the distribution map of the electric field of the left-leaning disresonance higher modes of mould hexagon substrate integral wave guide filter;
Fig. 4 multilayer of the present invention is mixed the distribution map of the electric field of the Right deviation disresonance higher modes of mould hexagon substrate integral wave guide filter;
Fig. 5 multilayer of the present invention is mixed the transmission characteristic comparison diagram of mould hexagon substrate integral wave guide filter and traditional bimodulus substrate integral wave guide filter;
Description of symbols in figure: the first metal layer 1, first medium substrate 2, the second metal level 3, second medium substrate 4, the 3rd metal level 5, upper plated-through hole array 61, lower plated-through hole array 62, co-planar waveguide input 7, co-planar waveguide output 8, hexagon coupling slot combining structure 9, metallization coupling through hole 91, hexagon coupling slot 92, bent groove 93, V-arrangement coupling slot 10; The first resonant cavity 11, the second resonant cavity 12.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is further described.
As shown in Figure 1, this multilayer is mixed mould hexagon substrate integral wave guide filter, comprise the first metal layer 1 being cascading from top to bottom, first medium substrate 2, the second metal level 3, second medium substrate 4, the 3rd metal level 5, on described the first metal layer 1, be provided with co-planar waveguide input 7, co-planar waveguide output 8, between described co-planar waveguide input 7 and co-planar waveguide output 8, there is angle, on described first medium substrate 2, be provided with the upper plated-through hole array 61 that runs through first medium substrate 2, described upper plated-through hole array 61 and the first metal layer 1, the second metal level 3 surrounds hexagonal the first resonant cavity 11 jointly, on described second medium substrate 4, be provided with the lower plated-through hole array 62 that runs through second medium substrate 4, described lower plated-through hole array 62 and the second metal level 3, the 3rd metal level 5 surrounds hexagonal the second resonant cavity 12 jointly, described the second resonant cavity 12 be positioned at the first resonant cavity 11 under, on described the first metal layer 1, be provided with hexagon coupling slot combining structure 9, described hexagon coupling slot combining structure 9 is positioned at the first resonant cavity 11, described hexagon coupling slot combining structure 9 comprises that runs through a first metal layer 1 successively, the metallization coupling through hole 91 of first medium substrate 2, be arranged on a hexagon coupling slot 92 and two bent grooves 93 on the first metal layer 1, described metallization coupling through hole 91 is positioned at the space surrounding of hexagon coupling slot 92, described hexagon coupling slot 92 is positioned at the space that two bent grooves 93 surround, on described the second metal level 3, be provided with two symmetrical V-arrangement coupling slots 10, described two V-arrangement coupling slots 10 are positioned at the second resonant cavity 12 and the Central Symmetry setting around the second resonant cavity 12.Described two bent grooves 93 surround a discontinuous hexagon groove, and the termination of described two bent grooves 93 is not communicated with, and the V-arrangement opening of described two V-arrangement coupling slots 10 is oppositely arranged.Between the co-planar waveguide input 7 of multilayer mixing mould hexagon substrate integral wave guide filter of the present invention and co-planar waveguide output 8, there is angle, and by being arranged on the loading effect of the hexagon coupling slot combining structure 9 on the first metal layer 1, both the effective secondary mould of resonance in actuating cavity cavity, and left-leaning and two disresonance higher modes of Right deviation, again can excitation filter source and load between electromagnetic coupled, effectively increase many barss transmission path, as Fig. 3, shown in 4, thereby two transmission zeros of extra acquisition on the basis of an original transmission zero, due to the second resonant cavity 12 be positioned at the first resonant cavity 11 under, can realize the coupling between the first resonant cavity 11 and the second resonant cavity 12 by two symmetrical V-arrangement coupling slots 10 that are arranged on the second metal level 3, produce again the 4th transmission zero, further broadening resistance band improve stopband attenuation amount, and the layout characteristics of resonant cavity vertical distribution of the present invention, without taking more circuit area, make multilayer mix the small volume of mould hexagon substrate integral wave guide filter, the simultaneously also vertical more resonant cavity of cascade according to demand, in addition, only use two resonant cavitys just can realize four limits and transmission zero, and traditional cross coupling cavity filter is realized six cavitys of similar performance need, therefore it is lower that multilayer of the present invention is mixed the loss of mould hexagon substrate integral wave guide filter, moreover, by controlling co-planar waveguide input 7, position and the angle of co-planar waveguide output 8 and hexagon coupling slot 92 structures, can adjust flexibly the position at four zero points, meet the demand of practical application.
Fig. 3, Fig. 4 have provided this multilayer and have mixed the "Left"-deviationist of mould hexagon substrate integral wave guide filter and the Electric Field Distribution of two disresonance higher modes of Right deviation.For more effective actuating cavity is left-leaning and two disresonance higher modes of Right deviation, the angle between described co-planar waveguide input 7 and co-planar waveguide output 8 is preferably 115~125 °.
For the ease of making processing, described golden the first metal layer 1, the second metal level 3, the 3rd metal level 5 adopt gold or silver to be made; Described first medium substrate 2, second medium substrate 4 adopt the microwave-medium ceramics of dielectric constant within the scope of 1-20 to be made.
Fig. 5 is the transmission characteristic comparison diagram that multilayer of the present invention is mixed mould hexagon substrate integral wave guide filter and traditional bimodulus substrate integral wave guide filter; as can be seen from Figure; multilayer of the present invention is mixed mould hexagon substrate integral wave guide filter can produce four transmission zeros; and traditional bimodulus substrate integral wave guide filter only produces a transmission zero, on the basis that does not increase filter loss, realize better selectivity characteristic and wider stopband.

Claims (4)

1. multilayer is mixed mould hexagon substrate integral wave guide filter, it is characterized in that: comprise the first metal layer (1) being cascading from top to bottom, first medium substrate (2), the second metal level (3), second medium substrate (4), the 3rd metal level (5), on described the first metal layer (1), be provided with co-planar waveguide input (7), co-planar waveguide output (8), between described co-planar waveguide input (7) and co-planar waveguide output (8), there is angle, on described first medium substrate (2), be provided with the upper plated-through hole array (61) that runs through first medium substrate (2), described upper plated-through hole array (61) and the first metal layer (1), the second metal level (3) surrounds hexagonal the first resonant cavity (11) jointly, on described second medium substrate (4), be provided with the lower plated-through hole array (62) that runs through second medium substrate (4), described lower plated-through hole array (62) and the second metal level (3), the 3rd metal level (5) surrounds hexagonal the second resonant cavity (12) jointly, described the second resonant cavity (12) be positioned at the first resonant cavity (11) under, on described the first metal layer (1), be provided with hexagon coupling slot combining structure (9), described hexagon coupling slot combining structure (9) is positioned at the first resonant cavity (11), described hexagon coupling slot combining structure (9) comprises that runs through a first metal layer (1) successively, the metallization coupling through hole (91) of first medium substrate (2), be arranged on a hexagon coupling slot (92) and two bent grooves (93) on the first metal layer (1), described metallization coupling through hole (91) is positioned at the space surrounding of hexagon coupling slot (92), described hexagon coupling slot (92) is positioned at the space that two bent grooves (93) surround, on described the second metal level (3), be provided with two symmetrical V-arrangement coupling slots (10), described two V-arrangement coupling slots (10) are positioned at the second resonant cavity (12) and the Central Symmetry setting around the second resonant cavity (12).
2. multilayer as claimed in claim 1 is mixed mould hexagon substrate integral wave guide filter, it is characterized in that: the angle between described co-planar waveguide input (7) and co-planar waveguide output (8) is 115~125 °.
3. multilayer as claimed in claim 1 or 2 is mixed mould hexagon substrate integral wave guide filter, it is characterized in that: described golden the first metal layer (1), the second metal level (3), the 3rd metal level (5) adopt gold or silver to be made.
4. multilayer as claimed in claim 3 is mixed mould hexagon substrate integral wave guide filter, it is characterized in that: described first medium substrate (2), second medium substrate (4) adopt the microwave-medium ceramics of dielectric constant within the scope of 1-20 to be made.
CN201410136134.6A 2014-04-08 2014-04-08 Multilayer hybrid guided mode hexagon substrate integral wave guide filter Expired - Fee Related CN103904391B (en)

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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104167578A (en) * 2014-08-06 2014-11-26 电子科技大学 Substrate integrated waveguide bandpass filter
CN108682924A (en) * 2018-05-29 2018-10-19 广东曼克维通信科技有限公司 Substrate integral wave guide filter
CN109149034A (en) * 2017-06-15 2019-01-04 乐山顺辰科技有限公司 A kind of microwave filter
CN109378561A (en) * 2018-10-19 2019-02-22 广东曼克维通信科技有限公司 Double-passband filter
CN110364793A (en) * 2019-06-13 2019-10-22 中国人民解放军国防科技大学 Hybrid SIW and SLSP structure broadband cavity filter
WO2020211287A1 (en) * 2019-04-15 2020-10-22 江苏贝孚德通讯科技股份有限公司 Dielectric filter and 5g communication device
CN113611993A (en) * 2021-07-21 2021-11-05 杭州电子科技大学 High-selectivity wide-stop-band folded substrate integrated waveguide dual-mode filter
CN115395191A (en) * 2022-09-08 2022-11-25 南京邮电大学 Wide-stopband substrate integrated waveguide filter based on hybrid coupling

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090273418A1 (en) * 2008-04-30 2009-11-05 Sony Corporation Communication system and antenna apparatus
CN101777678A (en) * 2010-03-08 2010-07-14 华东交通大学 Double-mode double-band band-pass filter based on hexagonal ring resonator
CN103413998A (en) * 2013-08-09 2013-11-27 电子科技大学 Single-cavity double-die hexagonal substrate integrated waveguide filter
CN103427138A (en) * 2013-08-15 2013-12-04 电子科技大学 Multilayer hexagonal substrate integrated waveguide filter

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090273418A1 (en) * 2008-04-30 2009-11-05 Sony Corporation Communication system and antenna apparatus
CN101777678A (en) * 2010-03-08 2010-07-14 华东交通大学 Double-mode double-band band-pass filter based on hexagonal ring resonator
CN103413998A (en) * 2013-08-09 2013-11-27 电子科技大学 Single-cavity double-die hexagonal substrate integrated waveguide filter
CN103427138A (en) * 2013-08-15 2013-12-04 电子科技大学 Multilayer hexagonal substrate integrated waveguide filter

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104167578A (en) * 2014-08-06 2014-11-26 电子科技大学 Substrate integrated waveguide bandpass filter
CN109149034A (en) * 2017-06-15 2019-01-04 乐山顺辰科技有限公司 A kind of microwave filter
CN108682924A (en) * 2018-05-29 2018-10-19 广东曼克维通信科技有限公司 Substrate integral wave guide filter
CN108682924B (en) * 2018-05-29 2019-09-20 广东曼克维通信科技有限公司 Substrate integral wave guide filter
CN109378561A (en) * 2018-10-19 2019-02-22 广东曼克维通信科技有限公司 Double-passband filter
CN109378561B (en) * 2018-10-19 2020-06-05 广东曼克维通信科技有限公司 Double-passband filter
WO2020211287A1 (en) * 2019-04-15 2020-10-22 江苏贝孚德通讯科技股份有限公司 Dielectric filter and 5g communication device
CN110364793A (en) * 2019-06-13 2019-10-22 中国人民解放军国防科技大学 Hybrid SIW and SLSP structure broadband cavity filter
CN113611993A (en) * 2021-07-21 2021-11-05 杭州电子科技大学 High-selectivity wide-stop-band folded substrate integrated waveguide dual-mode filter
CN115395191A (en) * 2022-09-08 2022-11-25 南京邮电大学 Wide-stopband substrate integrated waveguide filter based on hybrid coupling
CN115395191B (en) * 2022-09-08 2024-04-16 南京邮电大学 Wide-stop-band substrate integrated waveguide filter based on hybrid coupling

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