CN113826203A - 新半导体电子原理技术与器件 - Google Patents
新半导体电子原理技术与器件 Download PDFInfo
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- CN113826203A CN113826203A CN202080025941.4A CN202080025941A CN113826203A CN 113826203 A CN113826203 A CN 113826203A CN 202080025941 A CN202080025941 A CN 202080025941A CN 113826203 A CN113826203 A CN 113826203A
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
- H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0259—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using bipolar transistors as protective elements
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
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- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0296—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices involving a specific disposition of the protective devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
- H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Engineering & Computer Science (AREA)
- Amplifiers (AREA)
- Bipolar Transistors (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
一种半导体电子器件，电信号的转换是通过调制半导体电子器件的电导率完成，以电导率变化为基础的无源半导体电子器件，取代以电流变化为基础的有源半导体电子器件在半导体电子技术和设备中的应用，有效解决半导体电子理论与技术的发热等关键问题，完整地发挥半导体电子器件的功能和特性。半导体电子器件可根据功能和特性的不同要求，选用不同的半导体材料制造，工作速率提高100倍以上，在80℃以下环境温度中能保持正常、稳定和可靠工作，不需预热，开机就能稳定工作，电子器件以性能更强、稳定性可靠性更高、耗能更低的芯片，提高处理数据的能力和速度，解决无人驾驶、人工智能和智慧医疗等新兴领域亟待突破的关口，用于所有半导体电子设备。涉及半导体电子原理与技术、器件结构和工作原理、电路设计、器件制造和材料，产品功能与特性，属半导体电子技术领域。
Description
PCT国内申请，说明书已公开。
Claims (2)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911426662 | 2019-12-28 | ||
| CN2019114266624 | 2019-12-28 | ||
| PCT/CN2020/000042 WO2021128435A1 (zh) | 2019-12-28 | 2020-03-09 | 新半导体电子原理技术与器件 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113826203A true CN113826203A (zh) | 2021-12-21 |
Family
ID=76507611
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202080025941.4A Pending CN113826203A (zh) | 2019-12-28 | 2020-03-09 | 新半导体电子原理技术与器件 |
| CN202010702431.8A Pending CN113053871A (zh) | 2019-12-28 | 2020-07-04 | 新半导体电子原理技术与器件 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010702431.8A Pending CN113053871A (zh) | 2019-12-28 | 2020-07-04 | 新半导体电子原理技术与器件 |
Country Status (7)
| Country | Link |
|---|---|
| EP (1) | EP4084070A4 (zh) |
| JP (1) | JP2023508509A (zh) |
| KR (1) | KR20220119678A (zh) |
| CN (2) | CN113826203A (zh) |
| AU (1) | AU2020414761A1 (zh) |
| CA (1) | CA3163026A1 (zh) |
| WO (1) | WO2021128435A1 (zh) |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1003755B (zh) * | 1986-12-06 | 1989-03-29 | 汪克明 | 半导体电路不稳定性解决效率提高 |
| IT1218200B (it) * | 1988-03-29 | 1990-04-12 | Sgs Thomson Microelectronics | Procedimento di fabbricazione di un dispositivo semiconduttore mos di poterza a modulazione di conducibilita' (himos) e dispositivi con esso ottenuti |
| EP0371785B1 (en) * | 1988-11-29 | 1996-05-01 | Kabushiki Kaisha Toshiba | Lateral conductivity modulated MOSFET |
| CN103887169A (zh) * | 2013-11-29 | 2014-06-25 | 杭州恩能科技有限公司 | 一种具有提高抗浪涌电流能力的半导体装置的制备方法 |
| EP3519607A1 (en) * | 2016-09-27 | 2019-08-07 | Luxembourg Institute of Science and Technology (LIST) | Transparent p-n junction providing a rectifying contact |
| CN107170817B (zh) * | 2017-06-16 | 2019-08-02 | 电子科技大学 | 一种横向igbt |
-
2020
- 2020-03-09 AU AU2020414761A patent/AU2020414761A1/en not_active Abandoned
- 2020-03-09 KR KR1020227025314A patent/KR20220119678A/ko not_active Application Discontinuation
- 2020-03-09 EP EP20907132.3A patent/EP4084070A4/en active Pending
- 2020-03-09 CA CA3163026A patent/CA3163026A1/en active Pending
- 2020-03-09 CN CN202080025941.4A patent/CN113826203A/zh active Pending
- 2020-03-09 WO PCT/CN2020/000042 patent/WO2021128435A1/zh unknown
- 2020-03-09 JP JP2022539754A patent/JP2023508509A/ja active Pending
- 2020-07-04 CN CN202010702431.8A patent/CN113053871A/zh active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JP2023508509A (ja) | 2023-03-02 |
| EP4084070A4 (en) | 2024-02-07 |
| WO2021128435A1 (zh) | 2021-07-01 |
| AU2020414761A1 (en) | 2022-07-14 |
| EP4084070A1 (en) | 2022-11-02 |
| KR20220119678A (ko) | 2022-08-30 |
| CN113053871A (zh) | 2021-06-29 |
| CA3163026A1 (en) | 2021-07-01 |
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