CN113824905A - Dark full-color functional image sensor and preparation method thereof - Google Patents
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
- H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
- H04N25/70—SSIS architectures; Circuits associated therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
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- H01L27/14601—Structural or functional details thereof
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Abstract
The invention provides an image sensor with dark full-color function, comprising: a plurality of photosensitive elements disposed in the semiconductor substrate; the light filters are arranged on the light receiving surface of the light sensing unit and comprise color filters with different light responses and white filters with full-spectrum response; and an infrared suppression film disposed between the color filter and the photosensitive element to suppress infrared light from entering the photosensitive element. According to the invention, the infrared cut-off film is arranged below the color filter, the color filter array mode is changed, and the white color filter with full spectral response is introduced, so that the full color effect of a dark scene can be achieved by using only one image sensor chip. The invention also provides a preparation method of the image sensor.
Description
Technical Field
The invention relates to an image sensor, in particular to an image sensor with a dark full-color function and a preparation method thereof.
Background
The image capturing apparatus includes an image sensor and an imaging lens. The imaging lens focuses light onto an image sensor to form an image, and the image sensor converts an optical signal into an electrical signal. The image capture device outputs electrical signals to other components of the host system. The image capture device and other components of the host system form an image sensor system or imaging system. The application of image sensors has become widespread and can be applied to various electronic systems such as mobile devices, digital cameras, medical devices or computers. The technology for fabricating image sensors, and particularly complementary metal oxide semiconductor ("CMOS") image sensors, continues to advance rapidly.
A typical image sensor includes a two-dimensional array of a plurality of light-sensitive elements ("pixels"). Such image sensors may be configured to produce color images by forming a Color Filter Array (CFA) over the pixels. Existing image sensor chips are typically designed for Bayer (Bayer) arrays. However, in an environment with weak illumination intensity at night, when sufficient brightness can be achieved by infrared supplementary lighting, the color cannot be restored, because infrared light can penetrate through the three filters of RGB, so that the signal intensity of all the colors is consistent. In security monitoring and machine vision etc. and require very high field to dark light scene, there are two kinds at current technical scheme: one is a CMOS image sensor in a Bayer mode, an infrared CUT-off device (IR-CUT) needs to be closed in a dark scene, infrared light is supplemented, an image is changed into black and white, and color information is completely lost; the second is to use two CMOS image sensor chips, as shown in fig. 1A and 1B, in a very dark scene, one chip in Bayer pattern is responsible for collecting color information, the other chip is full spectrum response, has no infrared cut-off, can receive actively supplemented infrared light, obtains luminance information with higher signal-to-noise ratio, and then fuses the two chips by using an algorithm, but this needs two chips and two lenses, and the cost is very high.
Disclosure of Invention
The following description sets forth the contributions of the present invention.
The invention provides an image sensor with a dark scene full-color function and a preparation method thereof, and the full-color effect of a dark scene is achieved by using only one image sensor chip.
An image sensor with a dark-scene full-color function, comprising:
a plurality of photosensitive elements disposed in the semiconductor substrate;
the light filters are arranged on the light receiving surface of the light sensing unit and comprise color filters with different light responses and white filters with full-spectrum response; and
and the infrared suppression film is arranged between the color filter and the photosensitive element so as to suppress infrared light from entering the photosensitive element.
The preparation method of the image sensor comprises the following steps:
providing a semiconductor substrate, wherein a pixel region and an isolation region are arranged in the semiconductor substrate, and the pixel region comprises a color pixel region and a white pixel region;
disposing an infrared suppressing film over the color pixel region;
disposing a color filter over the infrared suppressive film;
a white color filter is disposed over the white pixel region, the white color filter being in the same layer as the color filter.
The image sensor with the dark scene full-color function and the preparation method thereof have the advantages that the infrared cut-off film is arranged below the color filter, the color filter array mode is changed, and the white color filter with full-spectrum response is introduced, so that the full-color effect of a dark scene can be achieved by using only one image sensor chip, especially, infrared signals are received in a night environment, the sensitivity of the chip in different environments is improved, and the chip can accurately restore images and colors in an extremely dark scene.
Drawings
FIGS. 1A and 1B are schematic structural diagrams of a Bayer pattern color filter array and a full-spectrum response color filter in the prior art;
fig. 2 is a schematic structural diagram of an image sensor according to an embodiment of the present invention.
Fig. 3 is a schematic structural diagram of an image sensor according to another embodiment of the invention.
Fig. 4 is a schematic structural diagram of an image sensor according to another embodiment of the present invention.
Fig. 5 is a schematic structural diagram of an image sensor according to another embodiment of the invention.
Fig. 6 is a flowchart illustrating a method for manufacturing an image sensor according to an embodiment of the invention.
Fig. 7 is a flowchart illustrating a method for manufacturing an image sensor according to another embodiment of the present invention.
FIG. 8 is a diagram illustrating wavelength and transmittance of an image sensor according to the present invention.
Detailed Description
The figures show the invention, an image sensor with dark full-color function and a preparation method thereof. Various embodiments of an image sensor are disclosed herein. In the following description, numerous specific details are set forth in order to provide a more thorough understanding of the present invention. One skilled in the relevant art will recognize, however, that the invention can be practiced without one or more of the specific details, or with other methods, components, materials, and so forth. In other instances, well-known structures, materials, or operations are not shown or described in detail to avoid obscuring particular content.
According to the invention, the infrared cut-off film is arranged below the color filter, the color filter array mode is changed, and the white color filter with full spectral response is introduced, so that the full color effect of a dark scene can be achieved by using only one image sensor chip.
Fig. 2 is a schematic structural diagram of an image sensor according to an embodiment of the present invention. The image sensor includes a number of photosensitive elements 110, a number of optical filters 410/420, a transparent film 330, and an infrared suppressive film 310. The plurality of photosensitive elements 110 are disposed in the semiconductor substrate 100. The plurality of optical filters are disposed on the light receiving surface of the light sensing unit 110, and include color filters 410 with different light responses and a white filter 420 with a full spectrum response, where a light sensing element below the color filter 410 is used to collect color signals of an image, and a light sensing element below the white filter is used to collect brightness signals of the image. The transparent film 330 is disposed between the white filter 420 and the photosensitive element 110. The infrared suppression film 310 is disposed between the color filter 410 and the photosensitive element 110 to suppress infrared light from entering the photosensitive element 110.
The image sensor shown in fig. 2 is a backside illuminated (BSI) image sensor, the image sensor includes a metal wiring layer 200 disposed on a backlight surface of the photosensitive element 110, and the metal wiring layer 200 is provided with a metal wiring structure 210 to connect circuit components. In one embodiment, the image sensor further includes a plurality of micro-lenses 500 disposed on the color filters 410 and the white filters 420 to concentrate incident light onto the photosensitive elements 110. In one embodiment, the microlenses 500 are the same clear material as the transparent film 330 and the white color filter 420, such as quartz, glass, or any other suitable transparent material. Accordingly, the transparent film 330 may be a white color filter 420, i.e., a white color filter 420 having a double layer or a double layer thickness is disposed on the corresponding photosensitive element.
In one embodiment, an isolation structure 120 is disposed between adjacent photosensitive elements 110. The light sensing element 110 includes a photoelectric conversion portion for converting incident light into photoelectric charges and a charge transfer portion, such as a photodiode and a plurality of transistors, for reading and transferring out signal charges from the photoelectric conversion portion. The transistor is not shown in fig. 2, but the gate 212 of the transistor is shown in the metal wiring layer 200 to indicate the presence of the transistor. The isolation structure 120 is an oxide region. In one embodiment, the Isolation structure 120 is STI (Shallow Trench Isolation), and in another embodiment, the Isolation structure 120 is LOCOS (Local Oxidation of Silicon), and the Isolation structure 120 is used to reduce signal crosstalk and leakage current between the pixel regions 222.
The infrared suppressing film 310 is a material that allows visible light to pass therethrough and suppresses infrared light, and is disposed under the color filter 410, so that it is ensured that normal color information can be obtained without requiring optical elements such as an infrared CUT (IR-CUT) and the like, without being affected by infrared, and accurate color restoration can be obtained even when infrared supplementary lighting is used at night. While this material is not required under the white color filter 420, in one embodiment, the infrared inhibiting film is an infrared cut material having a light transmittance of 0.1% to 2%. In one embodiment, the material of the infrared suppressive film 310 is organic. In one embodiment, the material of the infrared suppressive film 310 is polyurethane or polyimide. In another embodiment, the material of the infrared suppressive film may be an inorganic substance. In one embodiment, the infrared suppressive film 310 has a thickness of 0.6-1.5um, and preferably, the infrared suppressive film has a thickness of 1 um. In one embodiment, the width of the infrared suppressive film 310 is 0.5-10um, and preferably, the width of the infrared suppressive film 310 is 2 um.
In one embodiment, a gap 320 is provided between the infrared suppressive film 310 and the transparent film 330. The gap 320 serves to prevent crosstalk of light between the photosensitive elements 110, thereby ensuring the best luminance signal-to-noise ratio. The gap 320 is made of a material with a low refractive index. In one embodiment, the gap 320 may be made of metal such as AL, W, or an inorganic thin film material such as SiO2, SiN, or the like, to prevent the infrared light from crosstalk. In one embodiment, the refractive index of the gap 320 is 1.3-1.5, and preferably, the refractive index of the gap 320 is 1.4. In one embodiment, the thickness of the gap 320 is 0.75-1um, and preferably, the thickness of the gap 320 is 0.8 um. In one embodiment, the width of the gap 320 is 0.3-1um, and preferably, the width of the gap 320 is 0.3 um. In one embodiment, the infrared suppressive film 310 and the transparent film 330 have the same width, and the gap 320 is located between the infrared suppressive film 310 and the transparent film 330 and below the interface between the color filter 410 and the white filter 420.
In one embodiment, the color filters 410 include a first photo-responsive color filter, a second photo-responsive color filter, and a third photo-responsive color filter. In one embodiment, the first photo-responsive color filter is a green filter, the second photo-responsive color filter is a blue filter, and the third photo-responsive color filter is a red filter.
Fig. 3 is a schematic structural diagram of an image sensor according to another embodiment of the invention. In the embodiment shown in fig. 3, the transparent film 330 is narrower than the infrared rejection film 310, and the gap 330 is offset toward the transparent film 320 and completely under the white filter 420, so that crosstalk of light rays can be better prevented. The structures in fig. 2 that are numbered identically to those in fig. 1 have the same functions, and are not described in detail herein.
Fig. 4 and 5 are schematic structural views of an image sensor according to another embodiment of the present invention. The image sensor shown in fig. 4 and 5 is a front-illuminated (FSI) image sensor. The metal wiring layer 200 is disposed on the light receiving surface of the light sensing element 110. The structures in fig. 4 and 5, which have the same reference numbers as those in fig. 2 and 1, have the same functions, and are not described again here.
The invention also provides a preparation method of the image sensor, which comprises the following steps:
providing a semiconductor substrate, wherein a pixel region and an isolation region are arranged in the semiconductor substrate, and the pixel region comprises a color pixel region and a white pixel region;
disposing an infrared suppressing film over the color pixel region;
disposing a color filter over the infrared suppressive film;
a white color filter is disposed over the white pixel region, the white color filter being in the same layer as the color filter.
In one embodiment, as shown in fig. 6, the method 600 for manufacturing an image sensor provided by the present invention comprises the following steps:
step 610: providing a semiconductor substrate, wherein a pixel region and an isolation region are arranged in the semiconductor substrate, and the pixel region comprises a color pixel region and a white pixel region;
step 620: arranging an infrared suppression film above a color pixel region, arranging a transparent film above a white pixel, and arranging a gap layer between the infrared suppression film and the transparent film;
step 630: disposing a color filter over the infrared suppressive film;
step 640: and disposing a white color filter on the transparent film, wherein the white color filter and the color filter are in the same layer.
In one embodiment, the preparation method 600 further comprises the steps of: and disposing a microlens over the color filter and the white filter, wherein the microlens is molded in synchronization with the white filter.
In one embodiment, the step 620 specifically includes: the gap layer is disposed first, then the infrared suppression film is disposed, and then the transparent film is disposed.
In another embodiment, as shown in fig. 7, a method 700 for manufacturing an image sensor provided by the present invention includes the following steps:
step 710: providing a semiconductor substrate, wherein a pixel region and an isolation region are arranged in the semiconductor substrate, and the pixel region comprises a color pixel region and a white pixel region;
step 720: arranging an infrared suppression film above the color pixel region, and arranging a gap layer on the edge of the infrared suppression film;
step 730: disposing a color filter over the infrared suppressive film;
step 740: a transparent film is disposed over the white pixel region, a white color filter is disposed over the transparent film, the transparent film is in the same layer as the infrared suppression film and the gap layer, and the white color filter is in the same layer as the color filter.
In one embodiment, the preparation method 700 further comprises the steps of: and arranging a micro lens above the color filter and the white filter, wherein the micro lens is synchronously molded with the transparent film and the white filter. Wherein, in one embodiment, the micro-lenses are the same clear material as the transparent film, white color filter, such as quartz, glass, or any other suitable transparent material.
In one embodiment, the step 720 specifically includes: the gap layer is disposed first, and then the infrared suppression film is disposed.
The difference between the manufacturing method 700 and the manufacturing method is that the manufacturing method 700 does not manufacture the transparent film but manufacture the color filter part after completing the manufacturing steps of the infrared cut-off film and the gap layer, and then completes the filling of the materials of the micro lens, the white color filter and the transparent film synchronously, thereby reducing the intermediate interface and improving the sensitivity.
In one embodiment, the color filters include a first photo-responsive color filter, a second photo-responsive color filter, and a third photo-responsive color filter, wherein the first photo-responsive color filter is a green filter, the second photo-responsive color filter is a blue filter, and the third photo-responsive color filter is a red filter. In step 630 or step 730, the method specifically includes: the green filter is firstly arranged, then the red filter is arranged, and then the blue filter is arranged.
In one embodiment, the method further comprises the steps of: and arranging a metal wiring layer on the backlight surface of the semiconductor substrate. In further embodiments, a metal wiring layer is disposed on the light receiving surface of the semiconductor substrate and below the infrared suppression film.
FIG. 8 is a diagram illustrating wavelength and transmittance of an image sensor according to the present invention. According to the present invention, the infrared suppression films with different thicknesses have a transmittance of approximately 0 for infrared light with a wavelength of about 850 nm, and have a higher transmittance for other visible light, so that visible light can pass and infrared light can be suppressed, and the white filter can guarantee luminance information, so that the image sensor can have the best luminance signal-to-noise ratio.
The image sensor with the dark scene full-color function and the preparation method thereof have the advantages that the infrared cut-off film is arranged below the color filter, the color filter array mode is changed, and the white color filter with full-spectrum response is introduced, so that the full-color effect of a dark scene can be achieved by using only one image sensor chip, especially, infrared signals are received in a night environment, the sensitivity of the chip in different environments is improved, and the chip can accurately restore images and colors in an extremely dark scene.
Reference throughout this specification to "one embodiment," "an embodiment," "one example" or "an example" means that a particular feature, structure or characteristic described in connection with the embodiment or example is included in at least one embodiment. Or an example of the present invention. Thus, the appearances of the phrases such as "in one embodiment" or "in an example" in various places throughout this specification are not necessarily all referring to the same embodiment or example. Furthermore, the particular features, structures, or characteristics may be combined in any suitable manner in one or more embodiments or examples. Directional terms such as "top," "down," "above," and "below" are used with reference to the orientation of the drawings as described. Furthermore, the terms "having," "including," "containing," and similar terms are defined as meaning "including" unless specifically stated otherwise. The particular features, structures, or characteristics may be included in an integrated circuit, an electronic circuit, a combinational logic circuit, or other suitable components that provide the described functionality. Additionally, it should be understood that the drawings provided herein are for illustrative purposes only of those of ordinary skill in the art and that the drawings are not necessarily drawn to scale.
The above description of illustrated examples of the present invention, including what is described in the abstract, is not intended to be exhaustive or to be limited to the precise forms disclosed. While specific embodiments of, and examples for, the invention are described herein for illustrative purposes, various equivalent modifications can be made without departing from the broader spirit and scope of the invention. Indeed, it should be understood that the specific example structures and materials are provided for purposes of explanation, and that other structures and materials may be used in other embodiments and examples in accordance with the teachings of the present invention. These modifications can be made to embodiments of the present invention in light of the above detailed description. The terms used in the following claims should not be construed to limit the invention to the specific embodiments disclosed in the specification and the claims. Rather, the scope is to be determined entirely by the following claims, which are to be construed in accordance with established doctrines of claim interpretation.
The examples given in the embodiments of the present invention include, but are not limited to, the explanation and illustration of the present invention as set forth herein. The above-described embodiments are for illustrative purposes only and are not to be construed as limiting the invention. Appropriate modifications to the embodiments of the invention are made.
Claims (32)
1. An image sensor with a dark-scene full-color function, comprising:
a plurality of photosensitive elements disposed in the semiconductor substrate;
the light filters are arranged on the light receiving surface of the light sensing unit and comprise color filters with different light responses and white filters with full-spectrum response; and
and the infrared suppression film is arranged between the color filter and the photosensitive element so as to suppress infrared light from entering the photosensitive element.
2. The image sensor as claimed in claim 1, further comprising a metal wiring layer disposed on the backlight surface of the light sensing element, on which a metal wiring structure is disposed to realize connection of circuit components.
3. The image sensor as claimed in claim 1, further comprising a metal wiring layer disposed on the light receiving surface of the light sensing element and below the ir suppression film, on which a metal wiring structure is disposed to realize connection of circuit components.
4. The image sensor of claim 1, further comprising a plurality of microlenses disposed over the plurality of filters to concentrate incident light onto the photosensitive elements.
5. The image sensor as in claim 1, wherein a spacer structure is disposed between adjacent ones of said photosensitive elements.
6. The image sensor of claim 1, further comprising a transparent film disposed between the white filter and the photosensitive element.
7. The image sensor of claim 6, wherein a gap is provided between the infrared suppressive film and the transparent film.
8. The image sensor of claim 7, wherein the infrared suppressive film and the transparent film are uniform in width, and the gap is located intermediate the infrared suppressive film and the transparent film and below an interface of the color filter and the white filter.
9. The image sensor of claim 7, wherein the transparent film is narrower than the infrared suppressive film, and the gap is offset toward the transparent film and completely under the white filter.
10. The image sensor of claim 7, wherein the gap has a thickness of 0.75-1 um.
11. The image sensor of claim 7, wherein the gap has a thickness of 0.8 um.
12. The image sensor of claim 7, wherein the gap has a width of 0.3-1 um.
13. The image sensor of claim 7, wherein the gap has a width of 0.3 um.
14. The image sensor of claim 7, wherein the gap has a refractive index of 1.3-1.5.
15. The image sensor of claim 14, wherein the gap is selected to have a refractive index of 1.4.
16. The image sensor of claim 1, wherein the infrared suppressive film has a thickness of 0.6-1.5 um.
17. The image sensor of claim 16, wherein the infrared suppressive film has a thickness of 1 um.
18. The image sensor of claim 1, wherein the infrared suppressive film has a width of 0.5-10 um.
19. The image sensor of claim 18, wherein the infrared suppressive film has a width of 2 um.
20. The image sensor of claim 1, wherein the infrared suppressive film is an infrared cut-off material having a light transmittance of 0.1% to 2%.
21. The image sensor of claim 20, wherein the infrared suppressive film is a polyurethane or polyimide.
22. The image sensor of claim 1, wherein the color filters comprise a first light responsive color filter, a second light responsive color filter, and a third light responsive color filter.
23. The image sensor of claim 22, wherein the first photoresponsive color filter is a green filter, the second photoresponsive color filter is a blue filter, and the third photoresponsive color filter is a red filter.
24. A method for manufacturing an image sensor according to any one of claims 1 to 23, comprising the steps of:
providing a semiconductor substrate, wherein a pixel region and an isolation region are arranged in the semiconductor substrate, and the pixel region comprises a color pixel region and a white pixel region;
disposing an infrared suppressing film over the color pixel region;
disposing a color filter over the infrared suppressive film;
a white color filter is disposed over the white pixel region, the white color filter being in the same layer as the color filter.
25. The method of claim 24, further comprising: and disposing a microlens over the color filter and the white filter, wherein the microlens is molded in synchronization with the white filter.
26. The method of claim 24, further comprising: and disposing a transparent film over the white pixel region, the transparent film being positioned between the white color filter and the white pixel region, the transparent film and the infrared suppression film being positioned in the same layer, and the white color filter and the color filter being positioned in the same layer.
27. The method of claim 26, further comprising: and arranging a micro lens above the color filter and the white filter, wherein the micro lens is synchronously molded with the transparent film and the white filter.
28. The method of claim 26, further comprising: a gap layer is disposed between the infrared suppressive film and the transparent film.
29. The method of claim 28, wherein the gap layer is disposed prior to the infrared suppressive film and the transparent film.
30. The method according to claim 24, wherein the color filter includes a green filter, a blue filter, and a red filter; the step of "disposing a color filter over the infrared suppressive film" means: the green filter is firstly arranged, then the red filter is arranged, and finally the blue filter is arranged.
31. The method according to claim 24, further comprising providing a metal wiring layer on a backlight surface of the photosensitive element, wherein a metal wiring structure is provided in the metal wiring layer to connect circuit components.
32. The method according to claim 24, further comprising providing a metal wiring layer on the light receiving surface of the photosensitive element and below the ir-suppressive film, the metal wiring layer having a metal wiring structure provided therein for connection of circuit components.
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| CN202010560813.1A CN113824905A (en) | 2020-06-18 | 2020-06-18 | Dark full-color functional image sensor and preparation method thereof |
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| CN202010560813.1A CN113824905A (en) | 2020-06-18 | 2020-06-18 | Dark full-color functional image sensor and preparation method thereof |
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