CN113824424B - AT quartz crystal resonator, oscillator and design method based on four-layer film structure - Google Patents
AT quartz crystal resonator, oscillator and design method based on four-layer film structure Download PDFInfo
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- 239000010453 quartz Substances 0.000 title claims abstract description 97
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 97
- 239000013078 crystal Substances 0.000 title claims abstract description 80
- 238000000034 method Methods 0.000 title claims abstract description 17
- 238000013461 design Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 161
- 230000005284 excitation Effects 0.000 claims abstract description 65
- 230000002401 inhibitory effect Effects 0.000 claims abstract description 56
- 239000012528 membrane Substances 0.000 claims abstract description 8
- 238000005476 soldering Methods 0.000 claims description 27
- 238000012360 testing method Methods 0.000 claims description 27
- 230000001629 suppression Effects 0.000 claims description 12
- 239000003112 inhibitor Substances 0.000 claims description 10
- 230000008961 swelling Effects 0.000 claims description 10
- 239000007769 metal material Substances 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 142
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 10
- 239000011651 chromium Substances 0.000 description 7
- 229910052804 chromium Inorganic materials 0.000 description 6
- 229910052737 gold Inorganic materials 0.000 description 6
- 239000010931 gold Substances 0.000 description 6
- 229910052759 nickel Inorganic materials 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 229910052802 copper Inorganic materials 0.000 description 5
- 239000010949 copper Substances 0.000 description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910018487 Ni—Cr Inorganic materials 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 108010053481 Antifreeze Proteins Proteins 0.000 description 1
- WSNMPAVSZJSIMT-UHFFFAOYSA-N COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 Chemical compound COc1c(C)c2COC(=O)c2c(O)c1CC(O)C1(C)CCC(=O)O1 WSNMPAVSZJSIMT-UHFFFAOYSA-N 0.000 description 1
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- 230000001070 adhesive effect Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/30—Circuit design
- G06F30/36—Circuit design at the analogue level
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
Abstract
The invention discloses an AT quartz crystal resonator, an oscillator and a design method based on a four-layer film structure; belongs to the technical field of components; the technical key points are as follows: the AT quartz crystal resonance comprises: quartz wafer and first and second excitation electrodes; the first excitation electrode and the second excitation electrode are respectively arranged on two sides of the quartz crystal; first excitation electrode, second excitation electrode all adopt four layer membrane structures, and according to the order from near to far away from quartz crystal, include in proper order: the first expansion inhibiting material layer, the second high thermal expansion coefficient material layer, the third expansion inhibiting material layer and the fourth high thermal expansion coefficient material layer. By adopting the AT quartz crystal resonator, the oscillator and the design method based on the four-layer film structure, the technical requirement of the high-performance quartz crystal resonator for communication can be effectively met.
Description
Technical Field
The invention relates to the technical field of components, in particular to an AT quartz crystal resonator, an AT quartz crystal oscillator and a design method based on a four-layer film structure.
Background
The quartz crystal resonator is used as a passive electronic component and needs to be assembled on a PCB (printed circuit board) through a reflow soldering process to start oscillation and generate frequency. Reflow soldering is to heat the solder paste by controlling the heating temperature curve, so that the resonator is soldered on the PCB. In the reflow process, the frequency of the quartz crystal resonator is affected.
The applicant filed an application of 'a quartz crystal resonator/oscillator and a design method thereof' on the same day, and proposed a piezoelectric resonator which meets the requirement that FR is less than or equal to 2ppm at 0.5h under three reflow tests, and the reflow tests meet new requirements.
The significance of the above is that:
1) the above test corresponds to reality. The newly developed quartz crystal piezoelectric resonator is soldered to the PCB board by two or three times of reflow soldering. The existing products are tested by one-time reflow soldering, and the three-time reflow soldering requirements of new products are not met.
2) The test temperature profile for reflow soldering is generally: the peak temperature was 260 deg.C (10s), the reflow zone temperature was 215 deg.C and the time was maintained for 40s (see document 1: Neubig B W. hystersis efffects after reflow soldering of surface mount crystals [ J ]. IEEE, 1998). The test temperature profile of reflow soldering is related to the material composition of the solder paste (and more deeply, to the solder object). Therefore, the frequency change performance under the conditions that the peak temperature is 260 degrees (20-40 s) and the reflow region temperature is 215 degrees (60-150 s) cannot be ascertained by the results of the original reflow soldering test temperature curve test.
The applicant filed a "quartz crystal resonator/oscillator and method of designing the same" on the same day, which proposes a three-layer film structure that meets the new technical requirements. However, the corresponding problems are: the surface is provided with a low expansion material layer, such as Cr, and the problems are that: cr is etched very slowly, resulting in slow production efficiency. Therefore, as the natural idea of researchers, do the four-layer film structure meet new technical requirements (the surface of the four-layer film structure generally uses high expansion coefficient materials such as Au and Ag, and the production efficiency is faster than that of the three-layer film structure)?
The prior art for thermal shock (thermal effect) of quartz crystal oscillators is as follows:
document 1: neubig B W.hysteris effects after flow recovery of surface mount crystallizers [ J ]. IEEE, 1998.
Document 2: kusters J A, Vig J R.thermal hysteresis in quartz detectors-A review [ Frequency standards ] [ C ]// Symposium on Frequency control. IEEE,1990: 165-.
Document 3: CN 102739186B.
1) the teaching of document 3 suggests that the proposal of document 3 is assumed to have a natural expression of a low frequency change amount after three times of reflow soldering (each reflow soldering is also required to be high); namely, the above products are mistakenly regarded as satisfying the requirements.
2) The protocol of document 3 was adopted, since the test criteria were: the test conditions of single reflow soldering and single reflow soldering are as follows: peak temperature 260 ° (10s), reflow zone temperature 215 ℃ (40s), three times of reflow cannot be expected and the experimental conditions for a single reflow are: the peak temperature is 260 degrees (20-40 s), and the reflow zone temperature is 215 degrees (60-150 s).
3) In the four-layer film structure proposed in document 3 (see claim 16), only the ratio of the thickness of the first electrode layer to the electrode thickness is limited to 3% to 30%. From this solution, it is confusing that the thermal shock effect on the quartz crystal resonator has no effect on the ratio between the first layer and the third layer of the first electrode layer and the thickness ratio between the first electrode layer, the second electrode layer and the quartz crystal.
Combining the above factors, whether the four-layer film structure can also have "three times of reflow soldering and a single reflow soldering is: the performance that the peak temperature is 260 degrees (20-40 s), the temperature of a reflow region is 215 degrees (60-150 s), and the FR measured in 0.5h is less than 2ppm is a problem that research and development personnel always want to research and develop.
Disclosure of Invention
The invention aims to provide an AT quartz crystal resonator based on a four-layer film structure, aiming AT overcoming the defects of the prior art.
Another object of the present invention is to provide a design method for overcoming the above-mentioned disadvantages of the prior art.
It is a further object of the present invention to provide a quartz crystal oscillator that addresses the above-mentioned deficiencies of the prior art.
An AT quartz crystal resonator based on a four-layer film structure, comprising: quartz wafer and first and second excitation electrodes;
the first excitation electrode and the second excitation electrode are respectively arranged on two sides of the quartz crystal;
first excitation electrode, second excitation electrode all adopt four layer membrane structures, and according to the order from near to far away from quartz crystal, include in proper order: a first expansion inhibiting material layer, a second high thermal expansion coefficient material layer, a third expansion inhibiting material layer and a fourth high thermal expansion coefficient material layer;
the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the second high thermal expansion coefficient material layer;
the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the fourth high-thermal-expansion-coefficient material layer;
FR under three reflow test0.5hLess than or equal to 2 ppm; FR refers to the frequency change rate of the AT quartz crystal resonator;
the test conditions of the single reflow soldering of the three times of reflow soldering are as follows: the peak temperature is 260 deg.C (more accurately, 260 deg.C + -5 deg.C) and is maintained for 20-40 s, the reflow zone temperature is 215 deg.C and the maintaining time is 60-150 s.
An AT quartz crystal resonator based on a four-layer film structure, comprising: quartz wafer and first and second excitation electrodes;
the first excitation electrode and the second excitation electrode are respectively arranged on two sides of the quartz crystal;
first excitation electrode, second excitation electrode all adopt four layer membrane structures, and according to the order from near to far away from quartz crystal, include in proper order: a first expansion inhibiting material layer, a second high thermal expansion coefficient material layer, a third expansion inhibiting material layer and a fourth high thermal expansion coefficient material layer;
the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the second high thermal expansion coefficient material layer;
the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the fourth high-thermal-expansion-coefficient material layer;
FR under three reflow test0.5h≤1ppm，FR0.5h-FR168h≤2ppm；
The test conditions of the single reflow soldering of the three times of reflow soldering are as follows: the peak temperature is 260 deg.C (more precisely, 260 deg.C + -5 deg.C) and is maintained for 20-40 s, the reflow zone temperature is 215 deg.C and the maintaining time is 60-150 s.
Furthermore, the first excitation electrode and the second excitation electrode are symmetrically arranged on two sides of the quartz crystal.
Further, still include: a first fixing part, a second fixing part and a container; the first excitation electrode and the second excitation electrode are electrically connected with the container through the first fixing part and the second fixing part.
Furthermore, the four-layer film structure is made of metal materials.
Further, the first swelling inhibitor layer and the third swelling inhibitor layer are made of the same material.
Furthermore, the second high thermal expansion coefficient material layer and the fourth high thermal expansion coefficient material layer are made of the same material.
An AT quartz crystal resonator based on a four-layer film structure, comprising: quartz wafer and first and second excitation electrodes; the first excitation electrode and the second excitation electrode are respectively and symmetrically arranged on two sides of the quartz crystal;
first excitation electrode, second excitation electrode all adopt four layer of membrane structures, and according to the order from near to far away from quartz crystal, include in proper order: a first expansion inhibiting material layer, a second high thermal expansion coefficient material layer, a third expansion inhibiting material layer and a fourth high thermal expansion coefficient material layer; the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the second high thermal expansion coefficient material layer; the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the fourth high-thermal-expansion-coefficient material layer;
the thickness of the quartz crystal layer is h0Modulus of elasticity of E0Linear expansion coefficient of alpha0；
The first swelling inhibitor layer has a thickness h1Modulus of elasticity of E1Linear expansion coefficient of alpha1；
The thickness of the second high thermal expansion coefficient material layer is h2Modulus of elasticity of E2Linear expansion coefficient of alpha2；
The thickness of the third swelling inhibitor layer is h3Modulus of elasticityIs E3Linear expansion coefficient of alpha3；
The fourth high thermal expansion coefficient material layer has a thickness h4Modulus of elasticity of E4Linear expansion coefficient of alpha4；
The quartz crystal layer, the first expansion inhibiting material layer, the second high thermal expansion coefficient material layer, the third expansion inhibiting material layer and the fourth high thermal expansion coefficient material layer meet the following requirements:
further, the quartz crystal layer, the first expansion suppressing material layer, the second high thermal expansion coefficient material layer, the third expansion suppressing material layer, and the fourth high thermal expansion coefficient material layer satisfy
Further, the quartz crystal layer, the first expansion suppressing material layer, the second high thermal expansion coefficient material layer, the third expansion suppressing material layer, and the fourth high thermal expansion coefficient material layer satisfy
A quartz crystal oscillator adopts the AT quartz crystal resonator.
The design method of the AT quartz crystal resonator based on the four-layer film structure comprises the following steps: quartz wafer and first and second excitation electrodes; the first excitation electrode and the second excitation electrode are respectively and symmetrically arranged on two sides of the quartz crystal;
first excitation electrode, second excitation electrode all adopt four layer membrane structures, and according to the order from near to far away from quartz crystal, include in proper order: a first expansion inhibiting material layer, a second high thermal expansion coefficient material layer, a third expansion inhibiting material layer and a fourth high thermal expansion coefficient material layer; the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the second high thermal expansion coefficient material layer; the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the fourth high-thermal-expansion-coefficient material layer;
the thickness of the quartz crystal layer is h0Modulus of elasticity of E0Linear expansion coefficient of alpha0；
The first swelling inhibitor layer has a thickness h1Modulus of elasticity of E1Linear expansion coefficient of alpha1；
The thickness of the second high thermal expansion coefficient material layer is h2Modulus of elasticity of E2Linear expansion coefficient of alpha2；
The thickness of the third swelling inhibitor layer is h3Modulus of elasticity of E3Linear expansion coefficient of alpha3；
The fourth high thermal expansion coefficient material layer has a thickness h4Modulus of elasticity of E4Linear expansion coefficient of alpha4；
The method comprises the following steps:
first, a parameter RD is calculated:
secondly, through adjusting the material of arbitrary one deck or the multilayer on first inflation suppression timber layer, second high thermal expansion coefficient timber layer, third inflation suppression timber layer, fourth high thermal expansion coefficient timber layer, and/or, through adjusting the height of first inflation suppression timber layer, second high thermal expansion coefficient timber layer, third inflation suppression timber layer, arbitrary one deck or the multilayer on fourth high thermal expansion coefficient timber layer, satisfy:
RD≥25kpa。
further, by adjusting the material of any one or more of the first expansion inhibiting material layer, the second high thermal expansion coefficient material layer, the third expansion inhibiting material layer, and the fourth high thermal expansion coefficient material layer, and/or by adjusting the height of any one or more of the first expansion inhibiting material layer, the second high thermal expansion coefficient material layer, the third expansion inhibiting material layer, and the fourth high thermal expansion coefficient material layer, the requirements are met:
40kpa≥RD≥30kpa。
the beneficial effect of this application lies in:
first, a first invention of the present application is: the test conditions of three times of reflow soldering and single reflow soldering are provided for the first time as follows: FR having a peak temperature of 260 DEG (20-40 s) and a reflow zone temperature of 215 ℃ (60-150 s)'0.5hLess than or equal to 2 ppm.
Second, the second invention of the present application is: two new products were developed: for the four-layer film structure, also described are: FR in three reflow tests at a peak temperature of 260 ℃ and a duration of 80s to 150s0.5hUp to 2ppm is possible.
Third, the third invention of the present application is: design methods based on four-layer film results are proposed, i.e. RD parameters can be used to characterize FR0.5h. It should be noted that: the RD coefficient judgment rule provided by the application plays a guiding role in scheme design; and the size of the RD coefficient is not FR0.5hRequired technical characteristics of 2ppm or less (RD coefficient is an empirical summary of later tests).
Fourthly, it is to be noted herein that: CN102739186B does not disclose the product of the present application. Claim 16 of CN102739186B, structure one: 64nm quartz wafer +5nmCr +135Ag +10nmCr +30Cu, with the calculated RD values: measured FR at 18.3MPa0.5hAbout 7.5 ppm.
And the scheme of the application is adopted: the structure II is as follows: 64nm quartz wafer +5nmCr +135Ag +10nmCr +30Ag, RD value of 20.4MPa, measured FR0.5hAbout 1.5 ppm.
From RD values and measured FR0.5hIt is understood that structure one is not a product of the present application. It can be stated from this that CN102739186B does not disclose the solution of the present application.
Fifth, the present application proposes a method for designing a quartz crystal resonator adapted to a four-layer film structure, which has never been involved in the previous studies.
Drawings
The invention will be further described in detail with reference to examples of embodiments shown in the drawings to which, however, the invention is not restricted.
Fig. 1 is a structural diagram of an AT quartz crystal resonator based on a four-layer film structure according to the present application.
FIG. 2 is RD-FR0.5And (4) a relational graph.
Fig. 3 is a graph of comparative tests of three reflows for three combinations.
The reference numerals are explained below:
a first excitation electrode 1, a first expansion suppressing material layer 1a of the first excitation electrode, a second high thermal expansion coefficient material layer 1b of the first excitation electrode, a third expansion suppressing material layer 1c of the first excitation electrode, a fourth high thermal expansion coefficient material layer 1d of the first excitation electrode;
a second excitation electrode 2, a first expansion suppressing material layer 2a of the second excitation electrode, a second high thermal expansion coefficient material layer 2b of the second excitation electrode, a third expansion suppressing material layer 2c of the second excitation electrode, and a fourth high thermal expansion coefficient material layer 2d of the second excitation electrode;
a quartz wafer 3;
a first fixing portion 4a, a second fixing portion 4 b;
a container 5;
and an AT quartz crystal resonator 6.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described in detail with reference to the accompanying drawings, however, the present disclosure may be embodied in many different forms and should not be construed as being limited to the embodiments set forth herein. These embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art. In the drawings, the shape and size of elements may be exaggerated for clarity, and the same reference numerals and signs will be used throughout to designate the same or similar elements.
<First, structural design>
Fig. 1 shows a structure diagram of an AT quartz crystal resonator based on a four-layer film structure according to the present application. As shown in fig. 1, the AT quartz crystal resonator 6 based on the four-layer film structure includes: a quartz wafer 3, a first excitation electrode 1, a second excitation electrode 2, a first fixing portion 4a, a second fixing portion 4b, and a container 5;
the wafer 3 and the container 5 are bonded together by the first fixing portion 4a and the second fixing portion 4b using a conductive adhesive.
The first excitation electrode 1 and the second excitation electrode 2 are symmetrically arranged on two sides of the quartz crystal 3;
the first excitation electrode 1 and the second excitation electrode 2 are electrically connected to the container through the first fixing portion 4a and the second fixing portion 4 b.
According to the order from near to far away from the quartz, the first excitation electrode 1 comprises in sequence: a first expansion suppressing material layer 1a (nickel, chromium, nickel-chromium), a second high thermal expansion coefficient material layer 1b (gold, silver, copper), a third expansion suppressing material layer 1c (nickel, chromium, nickel-chromium), and a fourth high thermal expansion coefficient material layer 1d (gold, silver, copper);
the second excitation electrode 2 includes, in order: a first expansion inhibiting material layer 2a (nickel, chromium, nickel-chromium), a second high thermal expansion coefficient material layer 2b (gold, silver, copper), a third expansion inhibiting material layer 2c (nickel, chromium, nickel-chromium), and a fourth high thermal expansion coefficient material layer 2d (gold, silver, copper).
<Second, construct the parameter RD>
And (3) constructing a parameter RD:
wherein, Delta Tmax＝260℃-25℃＝235℃。
i＝1、2、3、4，αi、Ei、hiThe thermal expansion coefficient, the elastic modulus and the thickness of the ith film material are shown; alpha is alpha0、E0、h0The thermal expansion coefficient, elastic modulus, and thickness of the quartz crystal are shown.
0.5h<Third, FR-RD relation verification>
Reflow test: and performing reflow soldering for three times, wherein the parameters of each reflow soldering are as follows:
FIG. 2 shows FR of multi-group structure0.5hThe RD relation graph shows that when Au, Cu and Ag are used as the high thermal expansion coefficient material layer, and Ni, Ti, Cr and an alloy containing Ni, Ti and Cr are used as the expansion inhibiting material layer and the adhesion bonding material layer:
1) when RD is greater than or equal to 20kpa (more conservative, RD should be greater than or equal to 25kpa), FR is determined in three reflow tests0.5h≤2pmm；
2) When RD is between 32kpa and 40kpa, FR is0.5hLess than 1ppm will be satisfied; FR0.5 hour-FR168 hours2pmm or less, i.e., under such conditions, the quartz crystal resonator exhibits an ultra-high temperature frequency stability (i.e., the amplitude of frequency change of the quartz crystal resonator at high and low temperatures is less than 2ppm), which is not found in the two-layer structure.
Fig. 3 shows: the test results of 64nm quartz wafer +5nmCr +135Ag +5nmCr +30Ag, 64nm quartz wafer +5nmCr +135Ag +10nmCr +30Ag, and 64nm quartz wafer +5nmCr +135Ag +1nmCr +30Ag under three times of reflow soldering conditions.
The scheme of the application has more important significance in that:
when the scheme is selected, for the parameters: the Q value, ESP value, f value (target frequency), and several of the above parameters are calculated in the relevant specifications. But the performance of the reflow soldering test lacks theoretical guidance. Therefore, the proposal of the application does not need to carry out a large number of tests; thereby saving a large amount of test time and test cost.
<Description of the four and other contents>
The RD parameters are derived as follows:
TABLE 1
Relative positions between the plating layers and the sizes of the plating layers must be consistent relative to the upper direction and the lower direction of the quartz surface, so that the problem of electrodeless deviation is ensured; meanwhile, the warping problem is not considered; although the area of the film is different from that of the quartz crystal, the thermal stress generated in the quartz crystal is generated only in the region where the adhesion to the adhesive layer occurs, and the other portion can be freely elongated, that is, the region of the quartz crystal which is not in contact with the adhesive layer does not need to take into account the thermal stress and satisfies the following equation:
the above relation is expressed by a determinant:
it should be noted that:
Therefore, the force F between the first expansion suppressing material layer and the quartz crystal01Is unique and the solution results are:
where Δ T represents a temperature change amount.
Stress to which the quartz crystal is subjected (which is subjected to 2F)01The force of) can be expressed as:
the above-mentioned embodiments are only for convenience of description, and are not intended to limit the present invention in any way, and those skilled in the art will understand that the technical features of the present invention can be modified or changed by other equivalent embodiments without departing from the scope of the present invention.
Claims (10)
1. An AT quartz crystal resonator based on a four-layer film structure, comprising: quartz wafer and first and second excitation electrodes;
the first excitation electrode and the second excitation electrode are respectively arranged on two sides of the quartz crystal;
first excitation electrode, second excitation electrode all adopt four layer membrane structures, and according to the order from near to far away from quartz crystal, include in proper order: a first expansion inhibiting material layer, a second high thermal expansion coefficient material layer, a third expansion inhibiting material layer and a fourth high thermal expansion coefficient material layer;
the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the second high thermal expansion coefficient material layer;
the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the fourth high-thermal-expansion-coefficient material layer;
characterized by FR under three reflow tests0.5hLess than or equal to 2 ppm; FR refers to the frequency change rate of the AT quartz crystal resonator;
the test conditions of the single reflow soldering of the three times of reflow soldering are as follows: the peak temperature is 260 +/-5 ℃ and is kept for 20-40 s, the temperature of a reflow area is 215 ℃ and the keeping time is 60-150 s.
2. The AT quartz crystal resonator based on a four-layer film structure according to claim 1, characterized in that FR under three reflow tests0.5h≤1ppm，FR0.5h-FR168h≤2ppm。
3. An AT quartz crystal resonator based on a four-layer film structure, comprising: quartz wafer and first and second excitation electrodes; the first excitation electrode and the second excitation electrode are respectively and symmetrically arranged on two sides of the quartz crystal;
first excitation electrode, second excitation electrode all adopt four layer membrane structures, and according to the order from near to far away from quartz crystal, include in proper order: a first expansion inhibiting material layer, a second high thermal expansion coefficient material layer, a third expansion inhibiting material layer and a fourth high thermal expansion coefficient material layer; the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the second high thermal expansion coefficient material layer; the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the fourth high-thermal-expansion-coefficient material layer;
the thickness of the quartz crystal layer is h0Modulus of elasticity of E0Linear expansion coefficient of alpha0；
The first swelling inhibitor layer has a thickness h1Modulus of elasticity of E1Linear expansion coefficient of alpha1；
The thickness of the second high thermal expansion coefficient material layer is h2Modulus of elasticity of E2Linear expansion coefficient of alpha2；
The thickness of the third swelling inhibitor layer is h3Modulus of elasticity of E3Linear expansion coefficient of alpha3；
The fourth high thermal expansion coefficient material layer has a thickness h4Modulus of elasticity of E4Linear expansion coefficient of alpha4；
The quartz crystal layer, the first expansion inhibiting material layer, the second high thermal expansion coefficient material layer, the third expansion inhibiting material layer and the fourth high thermal expansion coefficient material layer meet the following requirements:
4. the AT quartz crystal resonator according to claim 3, wherein the quartz crystal layer, the first expansion suppressing material layer, the second high thermal expansion coefficient material layer, the third expansion suppressing material layer, and the fourth high thermal expansion coefficient material layer satisfy
5. The AT quartz crystal resonator according to claim 3, wherein the quartz crystal layer, the first expansion suppressing material layer, the second high thermal expansion coefficient material layer, the third expansion suppressing material layer, and the fourth high thermal expansion coefficient material layer satisfy
6. The AT quartz crystal resonator according to any one of claims 1 to 5, characterized in that the first excitation electrode and the second excitation electrode are symmetrically arranged on two sides of the quartz crystal;
further comprising: a first fixing part, a second fixing part and a container; the first excitation electrode and the second excitation electrode are electrically connected with the container through the first fixing part and the second fixing part;
the four-layer film structure is made of metal materials.
7. The AT quartz crystal resonator according to any one of claims 1 to 5, wherein the first and third expansion suppressing material layers are made of the same material; the second high thermal expansion coefficient material layer and the fourth high thermal expansion coefficient material layer are made of the same material.
8. A quartz crystal oscillator, characterized in that an AT quartz crystal resonator according to any one of claims 1 to 5 is used.
9. The design method of the AT quartz crystal resonator based on the four-layer film structure comprises the following steps: quartz chip, the first exciting electrode, the second exciting electrode; the first excitation electrode and the second excitation electrode are respectively and symmetrically arranged on two sides of the quartz crystal;
first excitation electrode, second excitation electrode all adopt four layer membrane structures, and according to the order from near to far away from quartz crystal, include in proper order: a first expansion inhibiting material layer, a second high thermal expansion coefficient material layer, a third expansion inhibiting material layer and a fourth high thermal expansion coefficient material layer; the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the second high thermal expansion coefficient material layer; the expansion coefficients of the first expansion inhibiting material layer and the third expansion inhibiting material layer are smaller than the expansion coefficient of the fourth high-thermal-expansion-coefficient material layer;
the thickness of the quartz crystal layer is h0Modulus of elasticity of E0Linear expansion coefficient of alpha0；
The first swelling inhibitor layer has a thickness h1Modulus of elasticity of E1Linear expansion coefficient of alpha1；
The thickness of the second high thermal expansion coefficient material layer is h2Modulus of elasticity of E2Linear expansion coefficient of alpha2；
The thickness of the third swelling inhibitor layer is h3Modulus of elasticity of E3Linear expansion coefficient of alpha3；
The fourth layer of high thermal coefficient of expansion material has a thickness of h4Elastic modulus of E4Linear expansion coefficient of alpha4；
The method is characterized by comprising the following steps:
first, a parameter RD is calculated:
secondly, through adjusting the material of arbitrary one deck or the multilayer on first inflation suppression timber layer, second high thermal expansion coefficient timber layer, third inflation suppression timber layer, fourth high thermal expansion coefficient timber layer, and/or, through adjusting the height of first inflation suppression timber layer, second high thermal expansion coefficient timber layer, third inflation suppression timber layer, arbitrary one deck or the multilayer on fourth high thermal expansion coefficient timber layer, satisfy:
RD≥25kpa。
10. the design method of the AT quartz crystal resonator based on the four-layer film structure according to claim 9, wherein the requirements are satisfied by adjusting the material of any one or more of the first expansion suppression material layer, the second high thermal expansion coefficient material layer, the third expansion suppression material layer, and the fourth high thermal expansion coefficient material layer, and/or by adjusting the height of any one or more of the first expansion suppression material layer, the second high thermal expansion coefficient material layer, the third expansion suppression material layer, and the fourth high thermal expansion coefficient material layer:
40kpa≥RD≥30kpa。
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