CN113823729B - Light-emitting diode assembly - Google Patents
Light-emitting diode assembly Download PDFInfo
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- CN113823729B CN113823729B CN202111160895.1A CN202111160895A CN113823729B CN 113823729 B CN113823729 B CN 113823729B CN 202111160895 A CN202111160895 A CN 202111160895A CN 113823729 B CN113823729 B CN 113823729B
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- light
- layer
- emitting diode
- transmitting layer
- transmitting
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- 239000010410 layer Substances 0.000 claims description 126
- 238000010030 laminating Methods 0.000 claims description 6
- 239000012780 transparent material Substances 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 239000012790 adhesive layer Substances 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- 238000005538 encapsulation Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 11
- 230000005540 biological transmission Effects 0.000 description 10
- 230000000694 effects Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000005022 packaging material Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a light-emitting diode component, which comprises a light-emitting diode chip, a reflecting layer and a light-transmitting layer, wherein the reflecting layer is arranged around the light-emitting diode chip, the light-transmitting layer is sequentially covered on the light-emitting diode chip, the light-emitting diode chip is provided with a light-emitting surface, a positive electrode and a negative electrode which are positioned on the opposite sides of the light-emitting surface, the light-transmitting layer comprises a uniform medium light-transmitting layer and a beam-converging light-transmitting layer, the uniform medium light-transmitting layer is adhered to the light-reflecting layer, the light-reflecting layer comprises a uniform light-transmitting plate and a plurality of reflecting plates, the reflecting plates are vertically arranged in the uniform light-transmitting plate, the reflecting directions of the reflecting plates face the center of the uniform light-transmitting plate, and the refractive index of the light-transmitting layer is larger than that of the uniform light-transmitting plate.
Description
Technical Field
The present invention relates to a light emitting diode, and more particularly, to a light emitting diode assembly.
Background
A light emitting diode (LIGHT EMITTING diode, LED) is a light emitting component made of semiconductor material. The LED is cold-lighted, and has the advantages of low power consumption, long service life, fast reaction speed, etc. and the features of small size and easy manufacture into very small or array components, so that its application range includes computer or household appliance indicator lamp, LCD backlight source, traffic signal or vehicle indicator lamp. Improving the light extraction efficiency of light emitting diodes has been a direction of efforts in the industry.
The traditional LED has a preset base mounting surface, a circle of reflecting material is arranged on the LED chip to form a surrounding board with light reflection performance, and then packaging materials and fluorescent powder are filled in the surrounding board with light reflection performance to adjust the light emitting and lighting effects of the LED. Light emitted from the bottom of the light emitting diode in the light emitting diode assembly filled with the reflective enclosure and the packaging material is absorbed by the packaging material and blocked by the substrate, so that the light generated by the light emitting diode chip is emitted from the top of the enclosure with light reflection performance formed on the substrate, and finally emitted through the light-transmitting packaging plate or other light-transmitting elements.
However, when the light emitting diode with the structure emits light, the angle of the light emitted by the light emitting diode chip is enlarged due to the reflection of the inner wall of the reflecting cup on the light, and meanwhile, the light emitted from the top of the reflecting cup is not strong in light directivity after passing through the packaging material and the fluorescent powder, so that the color temperature of the emitted light is uneven at all positions of the periphery of the top of the reflecting cup. Therefore, it is necessary to improve the structure of the light emitting diode, so that the light emitted by the light emitting diode as the light source can be effectively converged, and the technical effects of stronger light directivity and more uniform light-emitting color temperature can be satisfied.
Disclosure of Invention
The invention aims to: the invention aims to overcome the defects of the prior art and provide a light-emitting diode assembly.
The technical scheme is as follows: the invention discloses a light-emitting diode assembly, which comprises a light-emitting diode chip, a reflecting layer and a light-transmitting layer, wherein the reflecting layer is arranged around the light-emitting diode chip, the light-transmitting layer is sequentially covered on the light-emitting diode chip, the light-emitting diode chip is provided with a light-emitting surface, a positive electrode and a negative electrode which are positioned on the opposite sides of the light-emitting surface, the light-transmitting layer comprises a uniform medium light-transmitting layer and a beam-converging light-transmitting layer which are arranged on the light-emitting surface, the beam-converging light-transmitting layer comprises a reflecting light-transmitting layer and a refraction light-transmitting layer, the reflecting light-transmitting layer is arranged on the uniform medium light-transmitting layer, the reflecting light-transmitting layer comprises a uniform light-transmitting plate and reflecting plates which are vertically arranged in the uniform light-transmitting plate and the reflecting directions of the reflecting plates face the center of the uniform light-transmitting plate, and the refraction light-transmitting layer is arranged on the reflecting light-transmitting layer and has a refractive index larger than the uniform light-transmitting plate.
Preferably, the refraction and light transmission layer comprises a plurality of triangular lenses which are fixed in the low-density transparent material layer, are parallel to each other and are closely arranged, the vertex angles of all the triangular lenses face the center point of the refraction and light transmission layer, and the bottom surfaces are perpendicular to the upper surface of the refraction and light transmission layer.
Preferably, the low density transparent material layer comprises two parsheet layers, and the triangular lens clip is fixedly arranged between the two parsheet layers.
Preferably, the thickness of the Parm plate layer is 40-60 nm, and the side length of the cross section of the triangular lens is 40-60 nm.
Preferably, the thickness of the homogeneous light-transmitting plate is 80 to 100nm.
Preferably, the reflecting plate includes a single-sided electroplated silver reflecting film, and the thickness of the single-sided electroplated silver reflecting film is 1-3 nm.
Preferably, a phosphor layer is coated between the reflective light-transmitting layer and the refractive light-transmitting layer.
Preferably, the reflecting layer extends upwards and is encapsulated on the side surface of the light-transmitting layer, the bottom surfaces of the positive electrode and the negative electrode are exposed on the bottom surface of the reflecting layer, and the upper top surface of the reflecting layer is coplanar with the top surface of the light-transmitting layer.
Preferably, an encapsulation adhesive layer is filled between the reflecting layer and the light-transmitting layer.
Compared with the prior art, the invention has the following beneficial effects: the LED chip is powered on and emits light, light is reflected by the reflecting layer for primary reflection and is transmitted out of the uniform medium light-transmitting layer and enters the reflecting light-transmitting layer, direct light is emitted normally, offset scattered light is reflected and converged by the reflecting plate to the center of the uniform light-transmitting plate, light emitted to the back of the reflecting plate is reflected diffusely, then the refraction back-scattering angle of the light entering the refracting light-transmitting layer is reduced, and the light converging degree is further improved.
Drawings
Fig. 1 is a schematic cross-sectional view of a light emitting diode assembly according to the present invention.
In the figure: 1. a light emitting diode chip; 2. a reflective layer; 3. a light-transmitting layer; 31. a uniform dielectric light transmission layer; 32. a converging light transmission layer; 321. a refractive light-transmitting layer; 3211. a parm ply; 3212. a triangular lens; 322. a reflective light-transmitting layer; 3221. a homogeneous light-transmitting plate; 3222. a reflection plate; 4. a positive electrode; 5. and a negative electrode.
Detailed Description
The following description of the technical solutions in the embodiments of the present invention will be clear and complete, and it is obvious that the described embodiments are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
In the description of the present invention, it should be understood that the terms "center", "longitudinal", "lateral", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", etc. indicate orientations or positional relationships based on the drawings are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present invention.
In the present invention, unless explicitly specified and limited otherwise, the terms "mounted," "connected," "secured," and the like are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally formed; the device can be mechanically connected, electrically connected and communicated; either directly, or indirectly, through intermediaries, may be in communication with each other, or may be in interaction with each other, unless explicitly defined otherwise. The specific meaning of the above terms in the present invention can be understood by those of ordinary skill in the art according to the specific circumstances.
The technical scheme of the invention is described in detail below by specific examples. The following embodiments may be combined with each other, and some embodiments may not be repeated for the same or similar concepts or processes.
The utility model provides a light emitting diode subassembly, including light emitting diode chip 1, enclose the reflector layer 2 of locating around the light emitting diode chip 1, cover the printing opacity layer 3 on light emitting diode chip 1 in proper order, light emitting diode chip 1 has a light-emitting surface and is located positive electrode 4 and negative electrode 5 of opposite one side of light-emitting surface, printing opacity layer 3 is including laminating the even medium printing opacity layer 31 and the receipts printing opacity layer 32 that the light-emitting surface set up, the receipts printing opacity layer 32 includes reflection printing opacity layer 322 and refraction printing opacity layer 321, reflection printing opacity layer 322 laminating even medium printing opacity layer 31 sets up, including homogeneity printing opacity plate 3221 and perpendicular setting in homogeneity printing opacity plate 3221 and a plurality of reflection direction orientation are towards the reflector plate 3222 of homogeneity printing opacity plate 3221 center department, refraction printing opacity layer 321 laminating reflection printing opacity layer 322 sets up and the refracting index is greater than homogeneity printing opacity plate 3221. The technical scheme has the advantages that the reflective light-transmitting layer 322 and the refractive light-transmitting layer 321 are arranged as assistance, the light-emitting diode chip 1 emits light after being electrified, the light is transmitted out of the uniform medium light-transmitting layer 31 and enters the reflective light-transmitting layer 322 after being subjected to primary reflection and beam collection by the reflective layer 2, the direct light is normally emitted, the light scattered in an offset way is reflected and converged by the reflective plate 3222 to the center of the uniform light-transmitting plate 3221, the light emitted to the back of the reflective plate 3222 is diffusely reflected, then the light enters the refractive light-transmitting layer 321 to be refracted, the scattering angle is reduced, the travelling route of the light is inwardly converged, and the light converging degree is further improved.
The specific structure of the refraction and light transmission layer 321 comprises a plurality of triangular lenses 3212 which are fixed in a low-density transparent material layer and are parallel to each other and are closely arranged, wherein the top corners of all the triangular lenses 3212 face the center point of the refraction and light transmission layer 321, the bottom surface of the triangular lenses is perpendicular to the upper surface of the refraction and light transmission layer 321, the low-density transparent material layer comprises two Parm layers 3211, the triangular lenses 3212 are clamped and fixed between the two Parm layers 3211, in order to ensure that the refraction and light transmission layer 321 has enough structural strength and simultaneously ensures good refraction and light transmission effect, the thickness of the Parm layers 3211 is set to be 40-60 nm, and the side length of the cross section of the triangular lenses 3212 is set to be 40-60 nm.
The specific structure and dimensions of the reflective transparent layer 322 are as follows: the thickness of the homogeneous light-transmitting plate 3221 is 80-100 nm; the reflective plate 3222 includes a single-sided electro-silvered reflective film having a thickness of 1 to 3nm; a phosphor layer is coated between the reflective light-transmitting layer 322 and the refractive light-transmitting layer 321, and the coated phosphor can exert a soft and smooth scattering effect on light.
The reflecting layer 2 extends upwards and is encapsulated on the side of the light-transmitting layer 3, the bottom surfaces of the positive electrode 4 and the negative electrode 5 are exposed on the bottom surface of the reflecting layer 2, the upper top surface of the reflecting layer 2 is coplanar with the top surface of the light-transmitting layer 3, and an encapsulating adhesive layer is filled between the reflecting layer 2 and the light-transmitting layer 3. The side wall surface of the light-transmitting layer 3 is encapsulated by the reflecting layer 2 and the encapsulation adhesive layer which extend upwards, and meanwhile, the light-transmitting layer has reflection performance, so that the light converging effect is improved, and the structural strength of the whole assembly is improved.
Comparing the performance of the LED component with the traditional LED component, the following experimental mode is designed: two light emitting diode chips 1 with the same power and light emitting area are manufactured, three solid light transmitting panels with the same thickness and the same material as the uniform medium light transmitting layer 31, the refraction light transmitting layer 321 and the reflection light transmitting layer 322 are packaged on the surfaces of the light emitting diode chips, one solid light transmitting panel is used for packaging the reflection layer outside the uniform medium light transmitting layer 31, namely the comparative example 1, the other solid light transmitting panel is used for packaging the reflection layer with the complete height, namely the comparative example 2, then the comparative example 3 is manufactured according to the structure of the light emitting diode component, the reflection layer is packaged outside the uniform medium light transmitting layer 31, the example, the comparative example 1, the comparative example 2 and the comparative example 3 are placed in the same power-on environment, and the optical pressure sensors with the same area as the example, the comparative example 1, the comparative example 2 and the comparative example 3 are respectively arranged right above the example 1, the comparative example 2 and the comparative example 3, the obtained optical pressure intensity is continuously measured for 30 minutes, the measured optical pressure intensity is averaged, and the measured batch parameters are obtained, and the optical pressure intensity parameters are as follows:
as can be seen from the above parameters, the arrangement of the reflective light-transmitting layer 322 and the refractive light-transmitting layer 321 and the structural feature of the first reflective surface extending upward and encapsulated on the side surface of the light-transmitting layer 3 can effectively improve the light-collecting capability of the led chip 1, thereby improving the lighting effect.
In the present invention, unless expressly stated or limited otherwise, a first feature "up" or "down" a second feature may be a direct contact between the first feature and the second feature, or an indirect contact between the first feature and the second feature through an intervening medium. Moreover, a first feature "above," "over" and "on" a second feature may be a first feature directly above or obliquely above the second feature, or simply indicate that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature may be the first feature being directly under or obliquely below the second feature, or simply indicating that the first feature is at a lower level than the second feature. In the description of the present specification, reference to the description of the terms "one embodiment," "some embodiments," "examples," "particular examples," or "some examples," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms are not necessarily directed to the same embodiment or example.
Furthermore, the particular features, structures, materials, or characteristics may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, the different embodiments or examples described in this specification and the features of the different embodiments or examples may be combined and combined by those skilled in the art without contradiction.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solution of the present invention, and not for limiting the same; although the invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical scheme described in the foregoing embodiments can be modified or some or all of the technical features can be replaced equivalently; such modifications and substitutions do not depart from the spirit of the invention.
Claims (9)
1. The utility model provides a light emitting diode subassembly, includes the light emitting diode chip, encloses to locate the reflection coating around the light emitting diode chip, cover in proper order in the printing opacity layer on the light emitting diode chip, the light emitting diode chip has a light-emitting surface and sets up respectively positive electrode and negative electrode in the opposite both sides of light-emitting surface, its characterized in that: the light-transmitting layer comprises a uniform medium light-transmitting layer and a beam-converging light-transmitting layer, wherein the uniform medium light-transmitting layer is arranged on the light-emitting surface of the laminating, the beam-converging light-transmitting layer comprises a reflection light-transmitting layer and a refraction light-transmitting layer, the reflection light-transmitting layer is arranged on the uniform medium light-transmitting layer of the laminating, the reflection light-transmitting layer comprises a homogeneous light-transmitting plate and a plurality of reflection plates which are vertically arranged in the homogeneous light-transmitting plate and face the center of the homogeneous light-transmitting plate in the reflecting direction, and the refraction light-transmitting layer is arranged on the reflection light-transmitting layer of the laminating and the refraction index is larger than that of the homogeneous light-transmitting plate.
2. A light emitting diode assembly as recited in claim 1, wherein: the refraction light-transmitting layer comprises a plurality of triangular lenses which are fixed in the low-density transparent material layer, are parallel to each other and are closely arranged, the vertex angles of all the triangular lenses face the center point of the refraction light-transmitting layer, and the bottom surfaces are perpendicular to the upper surface of the refraction light-transmitting layer.
3. A light emitting diode assembly as recited in claim 2, wherein: the low density transparent material layer includes two parsheet layers, and the triangular lens clamp is fixedly arranged between the two parsheet layers.
4. A light emitting diode assembly as recited in claim 3, wherein: the thickness of the Parm plate layer is 40-60 nm, and the side length of the cross section of the triangular lens is 40-60 nm.
5. A light emitting diode assembly as recited in claim 1, wherein: the thickness of the homogeneous light-transmitting plate is 80-100 nm.
6. A light emitting diode assembly as recited in claim 1, wherein: the reflecting plate comprises a single-sided electroplated silver reflecting film, and the thickness of the single-sided electroplated silver reflecting film is 1-3 nm.
7. A light emitting diode assembly as recited in claim 1, wherein: and a fluorescent powder layer is coated between the reflective light-transmitting layer and the refractive light-transmitting layer.
8. A light emitting diode assembly as recited in claim 1, wherein: the reflecting layer extends upwards and is encapsulated on the side face of the light-transmitting layer, the bottom faces of the positive electrode and the negative electrode are exposed out of the bottom face of the reflecting layer, and the upper top face of the reflecting layer is coplanar with the top face of the light-transmitting layer.
9. A light emitting diode assembly as recited in claim 8, wherein: and an encapsulation adhesive layer is filled between the reflecting layer and the light-transmitting layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111160895.1A CN113823729B (en) | 2021-09-30 | 2021-09-30 | Light-emitting diode assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111160895.1A CN113823729B (en) | 2021-09-30 | 2021-09-30 | Light-emitting diode assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113823729A CN113823729A (en) | 2021-12-21 |
| CN113823729B true CN113823729B (en) | 2024-05-28 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111160895.1A Active CN113823729B (en) | 2021-09-30 | 2021-09-30 | Light-emitting diode assembly |
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| Country | Link |
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| CN (1) | CN113823729B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20080044048A (en) * | 2006-11-15 | 2008-05-20 | 삼성전자주식회사 | Optical component and back light unit using the same |
| CN101430072A (en) * | 2006-01-19 | 2009-05-13 | 清华大学 | Assembled uniform surface light source |
| CN102418851A (en) * | 2010-09-27 | 2012-04-18 | 北京京东方光电科技有限公司 | LED (Light-Emitting Diode) light source and manufacturing method thereof as well as backlight source provided with same |
| CN107689409A (en) * | 2016-08-03 | 2018-02-13 | 展晶科技(深圳)有限公司 | Light emitting diode |
| CN111781771A (en) * | 2020-07-14 | 2020-10-16 | 京东方科技集团股份有限公司 | Backlight module, design method thereof and display device |
-
2021
- 2021-09-30 CN CN202111160895.1A patent/CN113823729B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101430072A (en) * | 2006-01-19 | 2009-05-13 | 清华大学 | Assembled uniform surface light source |
| KR20080044048A (en) * | 2006-11-15 | 2008-05-20 | 삼성전자주식회사 | Optical component and back light unit using the same |
| CN102418851A (en) * | 2010-09-27 | 2012-04-18 | 北京京东方光电科技有限公司 | LED (Light-Emitting Diode) light source and manufacturing method thereof as well as backlight source provided with same |
| CN107689409A (en) * | 2016-08-03 | 2018-02-13 | 展晶科技(深圳)有限公司 | Light emitting diode |
| CN111781771A (en) * | 2020-07-14 | 2020-10-16 | 京东方科技集团股份有限公司 | Backlight module, design method thereof and display device |
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| Publication number | Publication date |
|---|---|
| CN113823729A (en) | 2021-12-21 |
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