CN113809989B - Broadband low-frequency conversion loss double-balanced mixer chip based on GaAs process - Google Patents
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Abstract
A broadband low-frequency conversion loss double-balanced mixer chip based on a GaAs process is characterized in that local oscillator signals are input from two local oscillator baluns which are connected in parallel, converted into four balanced output ports, respectively connected with four local oscillator impedance matching networks and used for two Schottky diode mixing cores; meanwhile, radio frequency signals are input from two radio frequency baluns connected in parallel, the radio frequency signals are converted into four balanced output ports, and the four balanced output ports are respectively connected with four radio frequency impedance matching networks and used for two Schottky diode mixing cores; the intermediate frequency signal is led out from secondary center taps of the two radio frequency baluns and is output through an intermediate frequency filter network; the structure of the invention has the advantages that the frequency mixing product is only one fourth of the product of the single-ended frequency mixer, thereby greatly reducing the stray output of the frequency mixer, and the frequency bandwidth is improved, the frequency conversion loss is reduced, and the isolation degree and the linearity are correspondingly improved by combining the double balun structure with the local oscillator and the radio frequency impedance matching technology.
Description
[ technical field ] A
The invention belongs to the technical field of radio frequency integrated circuits, and relates to a broadband low-frequency conversion loss double-balanced mixer chip based on a GaAs process.
[ background ] A method for producing a semiconductor device
Under the push of the rapid development of 5G communication, the application of a multichannel technology enables the number of components of a radio frequency microwave circuit to be rapidly enlarged, the design idea of the original lumped circuit is difficult to adapt to the development of the future communication technology, and the transformation between signal frequencies is always a very important core problem in a communication system or a detection system.
In a communication system, a mixer is one of core devices in a microwave transceiving system, the performance of the mixer directly affects the performance of the whole system, and the mixer is realized by the nonlinear characteristics of active/passive devices to generate sum frequency and difference frequency components of an input frequency and shift the frequency of the input signal.
From the viewpoint of circuit configuration, mixer circuits can be roughly classified into two types: one type is a single-ended mixer, and the circuit only comprises one mixing tube, so that the circuit has the advantages of simple structure, poor performance and less application range, and is slightly applied to millimeter wave and submillimeter wave bands; the second type is a balanced mixer, which is composed of two or four mixing diodes with the same characteristics, and is divided into a single-balanced mixer and a double-balanced mixer according to the type of input signal. One input signal of the single-balanced mixer is a differential signal, the frequency conversion loss of the single-balanced mixer is theoretically improved compared with that of a single-ended mixer, the interference signal in an output signal of the single-balanced mixer is reduced by half, and a circuit comprises two mixing tubes; the two input signals of the double balanced mixer are both differential signals, which has the advantages that: the double-balanced mixer can restrain even harmonic components of local oscillation signals and radio frequency signals, has good isolation between ports, and is provided with four mixing tubes, so that the performance of the double-balanced mixer is obviously improved compared with a single-balanced mixer in the aspect of frequency conversion loss.
[ summary of the invention ]
The invention aims to provide a broadband low-frequency conversion loss double-balanced mixer chip based on a GaAs process, which comprises two local oscillator baluns, two radio frequency baluns, four local oscillator impedance matching networks, four radio frequency impedance matching networks, two Schottky diode frequency mixing cores and an intermediate frequency filter network, wherein the two local oscillator baluns are connected with the four local oscillator impedance matching networks;
the local oscillator signals are input from two local oscillator baluns connected in parallel, converted into four balanced output ports, respectively connected with four local oscillator impedance matching networks and used for two Schottky diode frequency mixing cores;
meanwhile, radio frequency signals are input from two radio frequency baluns connected in parallel, the radio frequency signals are converted into four balanced output ports, and the four balanced output ports are respectively connected with four radio frequency impedance matching networks and used for two Schottky diode mixing cores;
the intermediate frequency signal is led out from the secondary center taps of the two radio frequency baluns and is output through an intermediate frequency filter network.
Preferably, the local oscillator balun comprises capacitors C1, C2 and C3, and microstrip lines W1, W2, W3, W4, W5 and W6;
the local oscillation signal is connected with the microstrip lines W1 and W4, the other end of the microstrip line W1 is connected with the capacitor C2, the other end of the microstrip line W4 is connected with the capacitor C3,
the other end of the capacitor C2 is grounded, and the other end of the capacitor C3 is grounded.
Preferably, the capacitor C1 is connected to the microstrip line W3 and the inductor L2, the other end of the capacitor C1 is connected to the microstrip line W5 and the inductor L5, the other end of the microstrip line W3 is connected to ground to the microstrip line W2, the other end of the microstrip line W5 is connected to ground to the microstrip line W6, the other end of the microstrip line W2 is connected to the inductor L1, and the other end of the microstrip line W6 is connected to the inductor L6.
Preferably, the radio frequency balun comprises capacitors C4, C5, C6, microstrip lines W7, W8, W9, W10, W11, W12;
the radio frequency signal is connected with the microstrip lines W7 and W10, the other end of the microstrip line W7 is connected with the capacitor C5, the other end of the microstrip line W10 is connected with the capacitor C6, the other end of the capacitor C5 is grounded, and the other end of the capacitor C6 is grounded.
Preferably, the capacitor C4 is connected to the microstrip line W9 and the inductor L4, the other end of the capacitor C4 is connected to the microstrip line W11 and the inductor L7, the other end of the microstrip line W9 is connected to the microstrip line W8 and the capacitor C7, the other end of the microstrip line W11 is connected to the microstrip line W12 and the capacitor C7, the other end of the microstrip line W8 is connected to the inductor L3, and the other end of the microstrip line W12 is connected to the inductor L8.
Preferably, the local oscillator impedance matching network comprises inductors L1, L2, L5, and L6;
the other end of the inductor L1 is connected with the anode of the diode D1 and the cathode of the diode D3, the other end of the inductor L2 is connected with the cathode of the diode D2 and the anode of the diode D4, the other end of the inductor L5 is connected with the cathode of the diode D5 and the anode of the diode D7, the other end of the inductor L6 is connected with the anode of the diode D6 and the cathode of the diode D8,
preferably, the radio frequency impedance matching network comprises inductors L3, L4, L7, L8;
the other end of the inductor L3 is connected with the anode of the diode D3 and the cathode of the diode D4, the other end of the inductor L4 is connected with the cathode of the diode D1 and the anode of the diode D2, the other end of the inductor L7 is connected with the cathode of the diode D6 and the anode of the diode D5, and the other end of the inductor L8 is connected with the anode of the diode D8 and the cathode of the diode D7.
Preferably, the intermediate frequency filter network comprises a capacitor C7;
the capacitor C7 is connected to the other end of the microstrip line W9, the microstrip line W8, the other end of the microstrip line W11, and the microstrip line W12, and the other end of the capacitor C7 is grounded.
The broadband low-frequency conversion loss double-balanced mixer chip based on the GaAs process has the following beneficial effects: the structure of the invention has the advantages that the frequency mixing product is only one fourth of the product of the single-ended frequency mixer, thereby greatly reducing the stray output of the frequency mixer, and the frequency bandwidth is improved and the frequency conversion loss is reduced by combining the double-balun structure with the local oscillator and the radio frequency impedance matching technology, and the isolation degree and the linearity are correspondingly improved; compared with the classic double-balanced mixer structure, the double-balanced mixer structure has the advantages that the frequency bandwidth is expanded, the linearity is improved, and the frequency conversion loss is lower by adopting the local oscillator radio frequency impedance matching technology on the basis of the double-balun pair structure.
[ description of the drawings ]
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on the drawings without creative efforts.
FIG. 1 is a block diagram of a wideband low-conversion-loss double-balanced mixer chip based on GaAs process;
FIG. 2 is a circuit topology diagram of a broadband low-frequency conversion loss double-balanced mixer chip based on GaAs technology;
FIG. 3 is a circuit topology of a conventional double balanced mixer;
FIG. 4 is a graph comparing simulation results of frequency conversion loss with RF frequency variation for the present invention and a conventional double balanced mixer;
fig. 5 is a graph comparing simulation results of frequency conversion loss with variation of the intermediate frequency bandwidth of the present invention and the conventional double balanced mixer.
[ detailed description ] embodiments
In order to make the technical solutions of the present invention better understood, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the terms "first," "second," and the like in the description and claims of the present invention and in the drawings described above are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are, for example, capable of operation in sequences other than those illustrated or otherwise described herein. Moreover, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Embodiments of the present invention will be described in further detail below with reference to the accompanying drawings, referring to fig. 1 and 2;
specifically, in the embodiment of the application, the low-frequency conversion loss double-balanced mixer chip based on the GaAs process broadband comprises two local oscillator baluns, two radio frequency baluns, four local oscillator impedance matching networks, four radio frequency impedance matching networks, two Schottky diode mixing cores and an intermediate frequency filter network;
local oscillation signals are input from two local oscillation baluns which are connected in parallel, the local oscillation signals are converted into four balanced output ports, and the four balanced output ports are respectively connected with four local oscillation impedance matching networks and used for two Schottky diode frequency mixing cores;
meanwhile, radio frequency signals are input from two parallel radio frequency baluns, converted into four balanced output ports, and respectively connected with four radio frequency impedance matching networks for two Schottky diode frequency mixing cores;
the intermediate frequency signal is led out from the secondary center taps of the two radio frequency baluns and is output through an intermediate frequency filter network.
The radio frequency balun and the local oscillator balun convert unbalanced signals into differential signals, then the signal power is effectively provided for a Schottky diode frequency mixing core through the radio frequency impedance matching network and the local oscillator impedance matching network, and the intermediate frequency filter network extracts and outputs intermediate frequency signals.
The local oscillator balun comprises capacitors C1, C2 and C3 and microstrip lines W1, W2, W3, W4, W5 and W6;
the local oscillation signal is connected with the microstrip lines W1 and W4, the other end of the microstrip line W1 is connected with the capacitor C2, the other end of the microstrip line W4 is connected with the capacitor C3,
the other end of the capacitor C2 is grounded, and the other end of the capacitor C3 is grounded.
The capacitor C1 is connected with the microstrip line W3 and the inductor L2, the other end of the capacitor C1 is connected with the microstrip line W5 and the inductor L5, the other end of the microstrip line W3 is connected with the microstrip line W2 to the ground, the other end of the microstrip line W5 is connected with the microstrip line W6 to the ground, the other end of the microstrip line W2 is connected with the inductor L1, and the other end of the microstrip line W6 is connected with the inductor L6.
The capacitor C1 is used for enhancing the coupling degree between the microstrip coils, the capacitors C2 and C3 are used for improving the bandwidth, the microstrip lines W1, W2, W3, W4, W5 and W6 are used for converting local oscillation signals into differential signals, the microstrip lines W1 and W4 are 2/lambda lines, and the microstrip lines W2, W3, W5 and W6 are 4/lambda lines.
The radio frequency balun comprises capacitors C4, C5 and C6, and microstrip lines W7, W8, W9, W10, W11 and W12;
the radio frequency signal is connected with the microstrip lines W7 and W10, the other end of the microstrip line W7 is connected with the capacitor C5, the other end of the microstrip line W10 is connected with the capacitor C6, the other end of the capacitor C5 is grounded, and the other end of the capacitor C6 is grounded.
The capacitor C4 is connected with the microstrip line W9 and the inductor L4, the other end of the capacitor C4 is connected with the microstrip line W11 and the inductor L7, the other end of the microstrip line W9 is connected with the microstrip line W8 and the capacitor C7, the other end of the microstrip line W11 is connected with the microstrip line W12 and the capacitor C7, the other end of the microstrip line W8 is connected with the inductor L3, and the other end of the microstrip line W12 is connected with the inductor L8.
The capacitor C4 is used for enhancing the coupling degree between the microstrip coils, the capacitors C5 and C6 are used for improving the frequency bandwidth, the microstrip lines W7, W8, W9, W10, W11 and W12 are used for converting radio-frequency signals into differential signals, the microstrip lines W7 and W10 are 2/lambda lines, and the microstrip lines W8, W9, W11 and W12 are 4/lambda lines.
The local oscillator impedance matching network comprises inductors L1, L2, L5 and L6;
the other end of the inductor L1 is connected with the anode of the diode D1 and the cathode of the diode D3, the other end of the inductor L2 is connected with the cathode of the diode D2 and the anode of the diode D4, the other end of the inductor L5 is connected with the cathode of the diode D5 and the anode of the diode D7, the other end of the inductor L6 is connected with the anode of the diode D6 and the cathode of the diode D8,
the radio frequency impedance matching network comprises inductors L3, L4, L7 and L8;
the other end of inductance L3 is connected with diode D3's positive pole and diode D4's negative pole, inductance L4's the other end is connected with diode D1's negative pole and diode D2's positive pole, inductance L7's the other end is connected with diode D6's negative pole and diode D5's positive pole, inductance L8's the other end is connected with diode D8's positive pole and diode D7's negative pole.
The intermediate frequency filter network comprises a capacitor C7;
the capacitor C7 is connected with the other end of the microstrip line W9, the other end of the microstrip line W8, the other end of the microstrip line W11 and the microstrip line W12, and the other end of the capacitor C7 is grounded.
Specifically, when the amplitude of the local oscillator signal is much larger than that of the radio frequency signal, the diodes D3, D4, D7, and D8 are alternately conducted with the diodes D1, D2, D5, and D6, while the two output ends of the radio frequency balun are alternately in an open circuit and a conducting state, and an intermediate frequency signal is led out from the output common end of the radio frequency balun.
The invention adopts the following structure to improve the performance of the frequency mixer: (1) The frequency band width is improved by adding a frequency tuning tail capacitor at the unbalanced end of the balun by adopting an improved balun, and the coupling degree between coils is enhanced by adding a capacitor at the intermediate stage of the balun; (2) The local oscillator and the radio frequency impedance matching network are connected with the frequency mixing core to realize effective transmission of power; (3) And a double balun pair structure is adopted to realize broadband characteristics. The invention improves the frequency bandwidth, the flatness in the band and the frequency conversion loss, and simultaneously improves the linearity of the frequency mixer.
It should be noted that parameters of the two schottky diode mixing cores must be kept consistent, a radio frequency signal acts on the diode mixing cores through a radio frequency balun and a radio frequency impedance matching network, a local oscillator signal acts on the diode mixing cores through a local oscillator balun and a local oscillator impedance matching network, the balun converts an unbalanced signal into a balanced signal, an intermediate frequency signal is led out from a secondary center tap of the radio frequency balun, when the characteristics of the diodes are the same, a balanced bridge can be formed, the isolation degree is high, and the isolation degree can be further improved by connecting an intermediate frequency signal output end with a filter network.
In conclusion, the structure of the invention has the advantages that the frequency mixing product is only one fourth of the product of the single-ended frequency mixer, thereby greatly reducing the stray output of the frequency mixer, and the frequency bandwidth is improved, the frequency conversion loss is reduced, and the isolation degree and the linearity are correspondingly improved by combining the double-balun structure with the local oscillator and the radio frequency impedance matching technology; compared with the classic double-balanced mixer structure, the double-balanced mixer structure has the advantages that the frequency bandwidth is expanded, the linearity is improved, and the frequency conversion loss is lower by adopting the local oscillator radio frequency impedance matching technology on the basis of the double-balun pair structure.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.
Claims (5)
1. A low frequency conversion loss double balance mixer chip of broadband based on GaAs technology which characterized in that: the device comprises two local oscillator baluns, two radio frequency baluns, four local oscillator impedance matching networks, four radio frequency impedance matching networks, two Schottky diode mixing cores and an intermediate frequency filter network;
the local oscillator signals are input from two local oscillator baluns connected in parallel, converted into four balanced output ports, respectively connected with four local oscillator impedance matching networks and used for two Schottky diode frequency mixing cores;
meanwhile, radio frequency signals are input from two radio frequency baluns connected in parallel, the radio frequency signals are converted into four balanced output ports, and the four balanced output ports are respectively connected with four radio frequency impedance matching networks and used for two Schottky diode mixing cores;
the intermediate frequency signal is led out from secondary center taps of the two radio frequency baluns and is output through an intermediate frequency filter network;
the two local oscillator baluns comprise capacitors C1, C2 and C3 and microstrip lines W1, W2, W3, W4, W5 and W6;
the local oscillation signal is connected with the microstrip lines W1 and W4, the other end of the microstrip line W1 is connected with the capacitor C2, the other end of the microstrip line W4 is connected with the capacitor C3,
the other end of the capacitor C2 is grounded, and the other end of the capacitor C3 is grounded;
the local oscillator impedance matching network comprises inductors L1, L2, L5 and L6;
the capacitor C1 is connected with the microstrip line W3 and the inductor L2, the other end of the capacitor C1 is connected with the microstrip line W5 and the inductor L5, the other end of the microstrip line W3 is connected with the microstrip line W2 to the ground, the other end of the microstrip line W5 is connected with the microstrip line W6 to the ground, the other end of the microstrip line W2 is connected with the inductor L1, and the other end of the microstrip line W6 is connected with the inductor L6.
2. The GaAs process based broadband low conversion loss double balanced mixer chip of claim 1, characterized in that: the two radio frequency baluns comprise capacitors C4, C5 and C6, and microstrip lines W7, W8, W9, W10, W11 and W12;
the radio frequency signal is connected with the microstrip lines W7 and W10, the other end of the microstrip line W7 is connected with the capacitor C5, the other end of the microstrip line W10 is connected with the capacitor C6, the other end of the capacitor C5 is grounded, and the other end of the capacitor C6 is grounded;
the radio frequency impedance matching network comprises inductors L3, L4, L7 and L8;
the capacitor C4 is connected with the microstrip line W9 and the inductor L4, the other end of the capacitor C4 is connected with the microstrip line W11 and the inductor L7, the other end of the microstrip line W8 is connected with the inductor L3, and the other end of the microstrip line W12 is connected with the inductor L8.
3. The GaAs process based broadband low conversion loss double balanced mixer chip of claim 1, wherein:
the other end of inductance L1 is connected with diode D1's positive pole and diode D3's negative pole, inductance L2's the other end is connected with diode D2's negative pole and diode D4's positive pole, inductance L5's the other end is connected with diode D5's negative pole and diode D7's positive pole, inductance L6's the other end is connected with diode D6's positive pole and diode D8's negative pole.
4. The GaAs process based broadband low conversion loss double balanced mixer chip of claim 2, wherein:
the other end of inductance L3 is connected with diode D3's positive pole and diode D4's negative pole, inductance L4's the other end is connected with diode D1's negative pole and diode D2's positive pole, inductance L7's the other end is connected with diode D6's negative pole and diode D5's positive pole, inductance L8's the other end is connected with diode D8's positive pole and diode D7's negative pole.
5. The GaAs process based broadband low conversion loss double balanced mixer chip of claim 1, wherein: the intermediate frequency filter network comprises a capacitor C7;
the capacitor C7 is connected with the other end of the microstrip line W9, the other end of the microstrip line W8, the other end of the microstrip line W11 and the microstrip line W12, and the other end of the capacitor C7 is grounded.
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| CN114389542A (en) * | 2022-01-10 | 2022-04-22 | 西安博瑞集信电子科技有限公司 | Double-balanced mixer chip with high isolation and high linearity |
| CN114070203B (en) * | 2022-01-17 | 2022-04-19 | 华南理工大学 | Broadband up-conversion mixer |
| CN117060857A (en) * | 2023-10-13 | 2023-11-14 | 四川益丰电子科技有限公司 | High-linearity low-insertion-loss mixer |
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| CN103039001A (en) * | 2010-06-22 | 2013-04-10 | 赫梯特微波公司 | Improved double balanced mixer |
| CN103986419A (en) * | 2014-05-15 | 2014-08-13 | 电子科技大学 | Short-wave broadband double balanced mixer |
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| US7013122B2 (en) * | 2000-10-23 | 2006-03-14 | Scientific Components Corporation | Ultra high isolation mixer |
| KR100982441B1 (en) * | 2008-11-19 | 2010-09-15 | 한국전자통신연구원 | 3-way balun for a planar type double balanced mixer |
| CN106156435A (en) * | 2016-07-12 | 2016-11-23 | 成都泰格微电子研究所有限责任公司 | A kind of 2 ~ 4 GHz GaAs passive double balanced mixer chip and methods for designing thereof |
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| CN103039001A (en) * | 2010-06-22 | 2013-04-10 | 赫梯特微波公司 | Improved double balanced mixer |
| CN103986419A (en) * | 2014-05-15 | 2014-08-13 | 电子科技大学 | Short-wave broadband double balanced mixer |
| CN204966644U (en) * | 2015-07-16 | 2016-01-13 | 成都嘉纳海威科技有限责任公司 | Adopt cluster and electric capacity snail ba lun's passive double balanced mixer in broadband |
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Address after: Building 12, Hard Technology Enterprise Community, No. 3000 Biyuan Second Road, High tech Zone, Xi'an City, Shaanxi Province, 710065 Patentee after: Borui Jixin (Xi'an) Electronic Technology Co.,Ltd. Address before: 22nd floor, East Building, block B, Tengfei Kehui City, 88 Tiangu 7th Road, Yuhua Street office, high tech Zone, Xi'an, Shaanxi 710000 Patentee before: XI'AN BORUI JIXIN ELECTRONIC TECHNOLOGY Co.,Ltd. |