CN113809184A - PERC crystalline silicon solar cell and preparation method thereof - Google Patents

PERC crystalline silicon solar cell and preparation method thereof Download PDF

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CN113809184A
CN113809184A CN202110919743.9A CN202110919743A CN113809184A CN 113809184 A CN113809184 A CN 113809184A CN 202110919743 A CN202110919743 A CN 202110919743A CN 113809184 A CN113809184 A CN 113809184A
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silicon
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李志云
蒋柱
李跃
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Dongfang Risheng Anhui New Energy Co ltd
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Dongfang Risheng Anhui New Energy Co ltd
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Abstract

The invention discloses a PERC crystalline silicon solar cell and a preparation method thereof, relating to the technical field of PERC crystalline silicon solar cells; s1: forming a first silicon oxide film layer on the front surface of the silicon substrate; s2: forming SiC on the surface of the first silicon oxide film layer on the front surface of the silicon substrate: h, a film layer; wherein, SiC: and the H film layer is deposited by introducing reaction gases SiH4 and CH4, the introduction time is 10-30 seconds, and the introduction flow ratio of the reaction gases SiH4 to CH4 is 1: (2-10), adopting SiC: the H rete adds silicon nitride or silicon oxynitride rete and replaces traditional silicon nitride combination rete and aluminium oxide stack silicon nitride rete, through forming SiC: the proportion of CH4 introduced is adjusted during H film layer to realize adjusting C content, the higher the C content is, the better the conductivity is, so as to realize the effect of SiC: the conductivity of the H film layer and the light transmittance of different wavelengths are adjusted.

Description

PERC crystalline silicon solar cell and preparation method thereof
Technical Field
The invention relates to the technical field of PERC crystalline silicon solar cells, in particular to a PERC crystalline silicon solar cell and a preparation method thereof.
Background
The monocrystalline silicon PERC solar cell is known to have high conversion efficiency and relatively low cost, and is a mainstream technology of the current solar cell, however, with the development of PERC technology, the current efficiency is bottleneck, and the next generation technology topcon, heterojunction and other technical process technologies are not applied in large scale in production, so that a new way is found to improve the photoelectric conversion efficiency of the PERC cell, and to prolong the equipment life of the PERC production line and the life cycle of the PERC cell, which becomes an important problem at present.
For example, the invention patent with application publication number CN112768534A, application publication date 2021, 05 and 07, and name "a silicon oxide passivated PERC double-sided battery and its manufacturing method", the silicon oxide passivated PERC double-sided battery specifically comprises a silicon substrate, a front-side dielectric layer disposed on the front side of the silicon substrate, a first dielectric layer disposed on the back side of the silicon substrate, and a second dielectric layer disposed on the first dielectric layer; the front dielectric layer comprises a silicon dioxide layer and a silicon nitride film layer; the first dielectric layer is a silicon oxide layer or a silicon oxynitride film layer; the second dielectric layer comprises at least one silicon nitride film layer; the thickness of the first dielectric layer is 10-100 nm; the thickness of the second dielectric layer is 60-180 nm.
The front side of the existing single crystal PERC battery is generally passivated by a silicon nitride or silicon oxynitride combined film layer and forms an antireflection film, in order to obtain a good passivation effect and an antireflection effect, a bottom film high-refractive index (silicon-rich film) is adopted, the light absorption coefficient of the silicon nitride film is increased along with the increase of silicon content, the light transmittance is poor, the light absorption is particularly poor and the heat is generated in a short wave band, and the generation of a photovoltaic effect is influenced. The back surface of the cell is generally passivated by an aluminum oxide superposed silicon nitride film layer, and part of the back surface of the cell also adopts silicon oxynitride, although the negative fixed charge of the aluminum oxide and the H content in the film forming process have good surface passivation and field passivation effects on the back surface of the P-type cell, the electronegativity of the aluminum oxide is realized by a tetrahedral crystal, the requirements on the process and the annealing condition are higher, meanwhile, the conductivity of the aluminum oxide is poor, the conventional slurry cannot be burnt through, and the like, and back laser grooving or special slurry is needed, so that the series resistance of the cell can be increased on one hand. On the other hand, laser grooving spot damage can also increase back surface recombination.
Disclosure of Invention
The invention aims to provide a PERC crystalline silicon solar cell and a preparation method thereof, and aims to overcome the defects in the prior art.
In order to achieve the above purpose, the invention provides the following technical scheme: a preparation method of a PERC crystalline silicon solar cell comprises the following steps;
s1: forming a first silicon oxide film layer on the front surface of the silicon substrate;
s2: forming SiC on the surface of the first silicon oxide film layer on the front surface of the silicon substrate: h, a film layer;
wherein, SiC: and the H film layer is deposited by introducing reaction gases SiH4 and CH4, the introduction time is 10-30 seconds, and the introduction flow ratio of the reaction gases SiH4 to CH4 is 1: (2-10).
As a further description of the above technical solution: and in the step S2, in the step S2, reaction gases SiH4, CH4 and PH3 are introduced to deposit phosphorus-doped SiC: and (3) an H film layer, wherein the introducing time is 10-30 seconds, and the introducing flow ratio of the reaction gases SiH4, CH4 and PH3 is 1: (2-10): (0.5 to 3).
As a further description of the above technical solution: deposition of SiC: the reaction temperature of the H film layer is 350-500 ℃.
As a further description of the above technical solution: the step S2 is followed by: after phosphorus-doped SiC: and depositing the H film layer to form a first dielectric protection layer.
As a further description of the above technical solution: when the first dielectric protection layer is a silicon nitride film layer, introducing reaction gases SiH4 and NH3 for deposition, wherein the flow ratio of the reaction gases SiH4 to NH3 is 1: (6-12), and the reaction temperature is 470-520 ℃.
As a further description of the above technical solution: when the first dielectric protection layer is a silicon oxynitride film, reaction gases SiH4, NH3 and N2O are introduced for deposition, and the reaction temperature of the deposition is 470-520 ℃.
As a further description of the above technical solution: step S1 further includes: and forming a second dielectric protection layer on the back surface of the silicon substrate.
As a further description of the above technical solution: the step S2 is followed by S3: forming SiC on the surface of the second dielectric protection layer on the back surface of the silicon substrate: h, film layer.
As a further description of the above technical solution: SiC is formed on the surface of the second dielectric protection layer on the back surface of the silicon substrate: the H film layer is specifically as follows: depositing on the surface of the second silicon dioxide film layer on the back surface of the silicon substrate to form SiC: h film layer, deposition to form SiC: the H film layer is formed by introducing reaction gases SiH4 and CH4, the introduction time is 10-30 seconds, and the flow ratio of the reaction gases SiH4 to CH4 is 1: (3-12).
As a further description of the above technical solution: and S3, specifically, introducing reaction gases SiH4, CH4 and BH3, and depositing boron-doped SiC after 10-30 seconds: h film layer, the flow ratio of SiH4, CH4 and BH3 is 1: (3-12): (1-4).
As a further description of the above technical solution: further comprising the following steps of boron-doped SiC: and depositing the H film layer to form a first dielectric protection layer.
The PERC crystalline silicon solar cell is manufactured by the steps and comprises a silicon substrate, wherein the front surface of the silicon substrate is provided with a first silicon oxide film layer, and the surface of the first silicon oxide film layer positioned on the front surface of the silicon substrate 1 is deposited with phosphorus-doped SiC: h, film layer.
As a further description of the above technical solution: the back of the silicon substrate is provided with a second silicon dioxide film layer, and boron-doped SiC is deposited on the surface of the second silicon dioxide film layer on the back of the silicon substrate: h, film layer.
As a further description of the above technical solution: the boron-doped SiC: h film layer and phosphorus-doped SiC: the surface of the H film layer is provided with a first dielectric protection layer.
As a further description of the above technical solution: and a second dielectric protection layer is arranged on the back surface of the silicon substrate.
As a further description of the above technical solution: the thickness of the first silicon oxide film layer is 0.5-3 nm, and the thickness of the phosphorus-doped SiC: the thickness of the H film layer is 10-70nm, and the thickness of the phosphorus-doped SiC: the refractive index of the H film layer is 2.0-3.0.
As a further description of the above technical solution: the thickness of the first silicon oxide film layer is 1-1.5nm,
as a further description of the above technical solution: the phosphorus-doped SiC: the thickness of the H film layer is 30-50 nm.
A preparation method of a PERC crystalline silicon solar cell comprises the following steps;
s4: forming a second silicon dioxide film layer on the back of the silicon substrate;
s5: and forming SiC on the surface of the second silicon dioxide film layer on the back surface of the silicon substrate: h, a film layer;
wherein, SiC: and the H film layer is formed by introducing reaction gases SiH4 and CH4, and depositing SiC after 10-30 seconds of introduction: h film layer, the flow ratio of the reaction gases SiH4 and CH4 is 1: (3 to 12)
As a further description of the above technical solution: and in the step S5, introducing SiH4, CH4 and BH3 as reaction gases, and depositing boron-doped SiC after introducing for 10-30 seconds: h film layer, the flow ratio of the reaction gases SiH4, CH4 and BH3 is 1: (3-12): (1-4).
As a further description of the above technical solution: the step of performing step S5 further comprises the following steps of: and depositing the H film layer to form a first dielectric protection layer.
A PERC crystalline silicon solar cell is manufactured by the steps, and comprises a silicon substrate; the back of the silicon substrate is provided with a second silicon dioxide film layer, and boron-doped SiC is deposited on the surface of the second silicon dioxide film layer on the back of the silicon substrate: h, film layer.
As a further description of the above technical solution: the boron-doped SiC: the surface of the H film layer is provided with a first dielectric protection layer, and the front surface of the silicon substrate is provided with a combined film layer.
As a further description of the above technical solution: the boron-doped SiC: the thickness of the H film layer is 10-70nm, and the thickness of the boron-doped SiC: the refractive index of the H film layer is 1.9-2.8, and the thickness of the second silicon dioxide film layer is 0.5-3 nm.
As a further description of the above technical solution: the boron-doped SiC: the thickness of the H film layer is 30-50 nm.
As a further description of the above technical solution: the thickness of the second silicon dioxide film layer is 1-1.5 nm.
In the technical scheme, according to the preparation method of the PERC crystalline silicon solar cell provided by the invention, SiC: the H rete adds silicon nitride or silicon oxynitride rete and replaces traditional silicon nitride combination rete and aluminium oxide stack silicon nitride rete, through forming SiC: and adjusting the proportion of introduced CH4 during H film layer so as to realize adjustment of C content, wherein the C content is adjusted according to the proportion of the deposited gas CH 4: the Si flow ratio is increased, the SI-Si bonds in the film layer are reduced, the Si-C bonds, the C-H bonds and graphite C atoms are increased, so that the conductivity of the film is increased, the higher the C content is, the better the conductivity is, and the SiC: adjusting the conductivity of the H film layer and the light transmittance of different wavelengths; meanwhile, the passivation performance and the charged charge of the battery PERC are adjusted by doping PH3 and BH3 to passivate the front side and the back side of the battery PERC; SiC for the back of silicon substrate: the H film layer replaces an aluminum oxide film, so that the conductivity is improved, back surface grooving can be reduced or eliminated, namely the passivation area is improved, the recombination loss can be reduced, the FF (fill factor) is improved, and the battery conversion efficiency is improved; because current diffusion technology promotes battery conversion efficiency, can lead to the sheet resistance to increase (about 180 omega), and horizontal transmission resistance increases, and this has led to the current horizontal transmission ability variation, with the better SiC of electric conductivity: the H film layer can enhance the transverse current transmission capability; SiC: the H film layer has more H atoms, and the H atoms are selected from SiC: the H film escapes, enters the silicon wafer substrate and is combined with the suspension bond of silicon atoms, so that the passivation effect can be achieved, and the recombination is reduced; the preparation method of the PERC crystalline silicon solar cell is simple, and the conventional PERC cell production line can be produced according to the process without great change.
Since the preparation method of the PERC crystalline silicon solar cell has the technical effects, the PERC crystalline silicon solar cell prepared by the preparation method also has the technical effects.
Drawings
In order to more clearly illustrate the embodiments of the present application or technical solutions in the prior art, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments described in the present invention, and other drawings can be obtained by those skilled in the art according to the drawings.
Fig. 1 is a schematic structural diagram of a PERC crystalline silicon solar cell according to a second embodiment of the present invention;
fig. 2 is a schematic structural diagram of a PERC crystalline silicon solar cell according to a fourth embodiment of the present invention;
fig. 3 is a schematic structural diagram of a PERC crystalline silicon solar cell according to a sixth embodiment of the present invention.
Description of reference numerals:
1. a silicon substrate; 2. a first silicon oxide film layer; 3. boron-doped SiC: h, a film layer; 4. phosphorus-doped SiC: h, a film layer; 5. a first dielectric protection layer; 6. a second silicon dioxide film layer; 7. a combined film layer 8 and a second dielectric protection layer.
Detailed Description
In order to make the technical solutions of the present invention better understood, those skilled in the art will now describe the present invention in further detail with reference to the accompanying drawings.
Referring to fig. 1-3, an embodiment of the present invention provides a technical solution: .
The first embodiment is as follows:
a preparation method of a PERC crystalline silicon solar cell comprises the following steps;
s1: forming a first silicon oxide film layer on the front surface of the silicon substrate;
specifically, the first silicon oxide film can be formed by thermal oxidation, ALD, O3, PECVD, etc., wherein the thickness of the first silicon oxide film is 0.5 to 3 nm;
s2: forming SiC on the surface of the first silicon oxide film layer on the front surface of the silicon substrate: h, a film layer;
wherein, SiC: and the H film layer is deposited by introducing reaction gases SiH4 and CH4, the introduction time is 10-30 seconds, and the introduction flow ratio of the reaction gases SiH4 to CH4 is 1: (2-10).
Specifically, selecting PECVD equipment with N2, SiH4, NH3, CH4, PH3, BH3 gas sources and a flow controller, loading the silicon wafer prepared in the step S1 into a graphite boat, enabling the graphite boat-loaded silicon wafer to enter a reaction chamber, raising the temperature and keeping the temperature to reach the reaction temperature, vacuumizing the chamber for leak detection, introducing reaction gases SiH4 and CH4, and after introducing for 10-30 seconds, starting a radio frequency power supply to deposit SiC: h, the power of the radio frequency power supply is 4000W-19000W.
Reaction gases SiH4, CH4, PH3 were introduced to deposit phosphorus doped SiC: and (3) an H film layer, wherein the introducing time is 10-30 seconds, and the introducing flow ratio of the reaction gases SiH4, CH4 and PH3 is 1: (2-10): (0.5-3), optionally, firstly introducing reaction gases SiH4 and CH4, and after 10-30 seconds, starting a radio frequency power supply to deposit SiC: h film, then introducing PH3 through ion implantation technology to deposit and form phosphorus-doped SiC: and (3) preferably, directly and synchronously introducing SiH4, CH4 and PH3, and after 10-30 seconds of introduction, starting a radio frequency power supply to directly deposit the phosphorus-doped SiC through an in-situ doping process: h film, where the in-situ doping process is simpler and less equipment is used, it will be apparent to those skilled in the art that other reactive gases may also be used to effect deposition of phosphorus doped SiC: h film layer, such as POCl 3.
Optionally, phosphorus-doped SiC: the H film layer forming mode can also adopt a PVD or CVD mode to deposit and form phosphorus-doped SiC: h, film layer.
P-doped SiC: the reaction temperature of the H film layer is 350-500 ℃.
Preferably, step S2 is followed by: after phosphorus-doped SiC: and depositing a first dielectric protection layer on the surface of the H film layer, wherein the first dielectric protection layer is a silicon nitride film layer or a silicon oxynitride film layer.
When a silicon nitride film layer is formed, reaction gases SiH4 and NH3 are introduced for deposition, and the flow ratio of the reaction gases SiH4 to NH3 is 1: (6-12), and the reaction temperature for depositing the silicon nitride film layer is 470-520 ℃. Specifically, a nitrogen purging and cleaning furnace tube is used for raising the temperature to about 50 ℃, the temperature reaches 470-520 ℃, a reaction gas SiH4 is introduced, and NH3 is used for depositing a silicon nitride film.
When the silicon oxynitride film is formed, the reaction gases SiH4, NH3 and N2O are introduced for deposition, preferably, the reaction temperature for depositing the silicon oxynitride film is 470-520 ℃, and it is obvious to those skilled in the art that other reaction temperatures can also be used for depositing the silicon oxynitride film.
Step S2 is followed by step S3: depositing on the surface of the second dielectric protection layer on the back surface of the silicon substrate to form SiC: h film layer, forming SiC: the H film layer is introduced with reaction gases SiH4 and CH4, the introduction time is 10-30 seconds, and the flow ratio of the reaction gases SiH4 to CH4 is 1: (3-12), specifically, the second dielectric protection layer is the second silica film layer, packs the silicon chip back into the graphite boat in, graphite boat year silicon chip gets into the reaction chamber indoor, heats up the constant temperature and reaches reaction temperature to carry out the cavity evacuation leak hunting, let in reaction gas SiH4, CH4, let in after 10 ~ 30 seconds, open radio frequency power source deposit SiC: h, the power of the radio frequency power supply is 4000W-19000W.
Step S3 is to inject reaction gases SiH4, CH4 and BH3, and deposit boron-doped SiC after 10-30 seconds: h film layer, the flow ratio of SiH4, CH4 and BH3 is 1: (3-12): (1-4). Optionally, firstly introducing reaction gases SiH4 and CH4, and after introducing for 10-30 seconds, starting a radio frequency power supply to deposit SiC: h film layer, then introducing BH3 through ion implantation technology to deposit and form boron-doped SiC: and (3) preferably, directly and synchronously introducing SiH4, CH4 and BH3, and after 10-30 seconds of introduction, starting a radio frequency power supply to directly deposit boron-doped SiC through an in-situ doping process: h film, where the in-situ doping process is simpler and less equipment is used, it will be apparent to those skilled in the art that other reactive gases may also be used to effect deposition of boron doped SiC: h membrane layer, such as BBr 3.
By forming SiC: and adjusting the proportion of introduced CH4 during H film layer to realize adjustment of C content, specifically, the proportion of introduced CH4 is adjusted along with the proportion of deposited gas CH 4: the increase of the Si flow ratio reduces SI-Si bonds in the film layer, increases Si-C bonds, C-H bonds and graphite C atoms, thereby increasing the conductivity of the film, and the higher the C content is, the better the conductivity is, and the light transmittance is reduced. Since the front surface of the solar cell requires higher light transmittance and the back surface requires higher conductivity, when the front surface SiC is formed: the proportion of introduced CH4 is smaller than that of the SiC on the back surface when the H film layer is formed: the proportion of CH4 is introduced when H is used as a film layer.
Preferably, depositing boron-doped SiC: the reaction temperature of the H film is 350 ℃ to 500 ℃, and it is obvious to those skilled in the art that other reaction temperatures can be used to deposit the silicon oxide film.
After boron-doped SiC: the first dielectric protection layer is formed by depositing the surface of the H film layer, wherein the first dielectric protection layer is a silicon nitride film layer or a silicon oxynitride film layer, specifically, when the silicon nitride film layer is formed, reaction gases SiH4 and NH3 are introduced for deposition, and the flow ratio of the reaction gases SiH4 to NH3 is 1: (6-12), the reaction temperature for depositing the silicon nitride film layer is 470-520 ℃, the temperature of the furnace tube is cleaned by blowing nitrogen, the temperature is raised to about 50 ℃, the temperature reaches 470-520 ℃, the reaction gas SiH4 is introduced, and the NH3 deposits the silicon nitride film layer.
When the silicon oxynitride film is formed, reaction gases SiH4, NH3 and N2O are introduced for deposition, and preferably, the reaction temperature for depositing the silicon oxynitride film is 470-520 ℃.
In the technical scheme, according to the preparation method of the PERC crystalline silicon solar cell provided by the invention, SiC: the H rete adds silicon nitride or silicon oxynitride rete and replaces traditional silicon nitride combination rete and aluminium oxide stack silicon nitride rete, through forming SiC: and adjusting the proportion of introduced CH4 during H film layer to realize adjustment of C content, specifically, the proportion of introduced CH4 is adjusted along with the proportion of deposited gas CH 4: the Si flow ratio is increased, the SI-Si bonds in the film layer are reduced, the Si-C bonds, the C-H bonds and graphite C atoms are increased, so that the conductivity of the film is increased, the higher the C content is, the better the conductivity is, the light transmittance is reduced, and the SiC: adjusting the conductivity of the H film layer and the light transmittance of different wavelengths; meanwhile, the passivation performance and the charged charge of the battery PERC are adjusted by doping PH3 and BH3 to passivate the front side and the back side of the battery PERC; SiC for the back of silicon substrate: the H film layer replaces an aluminum oxide film, so that the conductivity is improved, back surface grooving can be reduced or eliminated, namely the passivation area is improved, the recombination loss can be reduced, the FF (fill factor) is improved, and the battery conversion efficiency is improved; because current diffusion technology promotes battery conversion efficiency, can lead to the sheet resistance to increase (about 180), horizontal transmission resistance increases, and this has led to the current horizontal transmission ability variation, with the better SiC of electric conductivity: the H film layer can enhance the transverse current transmission capability; SiC: the H film layer has more H atoms, and the H atoms are selected from SiC: the H film escapes, enters the silicon wafer substrate and is combined with the suspension bond of silicon atoms, so that the passivation effect can be achieved, and the recombination is reduced; the preparation method of the PERC crystalline silicon solar cell is simple, and the conventional PERC cell production line can be produced according to the process without great change.
Example two
The embodiment of the invention provides another technical scheme: as shown in fig. 1, the specific structure of the PERC crystalline silicon solar cell includes a silicon substrate 1, wherein a first silicon oxide film layer 2 and a second silicon oxide film layer 6 are respectively disposed on the front surface and the back surface of the silicon substrate 1, and a phosphorus-doped SiC is disposed on the surface of the first silicon oxide film layer 2 on the front surface of the silicon substrate 1: the H film layer 4, the surface of the second silicon dioxide film layer 6 positioned on the back surface of the silicon substrate 1 is provided with boron-doped SiC: h film layer 3, wherein, the content of the phosphorus-doped SiC: h film layer 4 and boron-doped SiC: the surface of the H film layer 3 is provided with a first dielectric protection layer 5, and the first dielectric protection layer 5 is a silicon nitride film layer or a silicon oxynitride film layer.
Specifically, the thickness of the first silicon oxide film 2 is 0.5 to 3nm, preferably 1 to 1.5 nm; boron-doped SiC: the thickness of the H film layer is 10-70nm, preferably 30-50nm, and the thickness of the boron-doped SiC: the refractive index of the H film layer is 1.9-2.8, and the content of the phosphorus-doped SiC: the refractive index of the H film layer is 2.0-3.0, and the deposition of the phosphorus-doped SiC: the thickness of the H film layer is 10-70nm, preferably 30-50 nm.
Example three:
a preparation method of a PERC crystalline silicon solar cell comprises the following steps;
s1: forming a first silicon oxide film layer on the front surface of the silicon substrate;
specifically, a silicon oxide film can be formed by thermal oxidation, ALD, O3, PECVD, and other methods, wherein the thickness of the silicon oxide film is 0.5 to 3 nm;
s2: forming SiC on the surface of the first silicon oxide film layer on the front surface of the silicon substrate: h, a film layer;
wherein, SiC: and the H film layer is deposited by introducing reaction gases SiH4 and CH4, the introduction time is 10-30 seconds, and the introduction flow ratio of the reaction gases SiH4 to CH4 is 1: (2-10).
Specifically, selecting PECVD equipment with N2, SiH4, NH3, CH4, PH3, BH3 gas sources and a flow controller, loading the silicon wafer prepared in the step S1 into a graphite boat, enabling the graphite boat-loaded silicon wafer to enter a reaction chamber, raising the temperature and keeping the temperature to reach the reaction temperature, vacuumizing the chamber for leak detection, introducing reaction gases SiH4 and CH4, and after introducing for 10-30 seconds, starting a radio frequency power supply to deposit SiC: h, the power of the radio frequency power supply is 4000W-19000W.
Reaction gases SiH4, CH4, PH3 were introduced to deposit phosphorus doped SiC: and (3) an H film layer, wherein the introducing time is 10-30 seconds, and the introducing flow ratio of the reaction gases SiH4, CH4 and PH3 is 1: (2-10): (0.5-3), optionally, firstly introducing reaction gases SiH4 and CH4, and after 10-30 seconds, starting a radio frequency power supply to deposit SiC: h film, then introducing PH3 through ion implantation technology to deposit and form phosphorus-doped SiC: and (3) preferably, directly and synchronously introducing SiH4, CH4 and PH3, and after 10-30 seconds of introduction, starting a radio frequency power supply to directly deposit the phosphorus-doped SiC through an in-situ doping process: h film, where the in-situ doping process is simpler and less equipment is used, it will be apparent to those skilled in the art that other reactive gases may also be used to effect deposition of phosphorus doped SiC: h film layer, such as POCl 3.
Optionally, phosphorus-doped SiC: the H film layer forming mode can also adopt a PVD or CVD mode to deposit and form phosphorus-doped SiC: h, film layer.
Preferably, the volume doping of the phosphorus SiC: the reaction temperature of the H film layer is 350-500 ℃.
Preferably, step S2 is followed by: after phosphorus-doped SiC: and depositing a first dielectric protection layer on the surface of the H film layer, wherein the first dielectric protection layer is a silicon nitride film layer or a silicon oxynitride film layer.
When a silicon nitride film layer is formed, reaction gases SiH4 and NH3 are introduced for deposition, and the flow ratio of the reaction gases SiH4 to NH3 is 1: (6-12), preferably, the reaction temperature for depositing the silicon nitride film layer is 470-520 ℃. Specifically, a nitrogen purging and cleaning furnace tube is used for raising the temperature to about 50 ℃, the temperature reaches 470-520 ℃, a reaction gas SiH4 is introduced, and NH3 is used for depositing a silicon nitride film.
When the silicon oxynitride film is formed, reaction gases SiH4, NH3 and N2O are introduced for deposition, and preferably, the reaction temperature for depositing the silicon oxynitride film is 470-520 ℃. .
Step S1 further includes: forming a second dielectric protection layer on the back of the silicon substrate, wherein the second dielectric protection layer is an aluminum oxide superposed silicon nitride film layer; the back of the conventional PERC crystalline silicon solar cell adopts an aluminum oxide superposed silicon nitride film layer structure, and the specific deposition method of the aluminum oxide superposed silicon nitride film layer is the prior art.
Example four:
the embodiment of the invention provides another technical scheme: as shown in fig. 2, the concrete structure of the PERC crystalline silicon solar cell includes a silicon substrate 1, a first silicon oxide film layer 2 is disposed on the front surface of the silicon substrate 1, and phosphorus-doped SiC is disposed on the surface of the first silicon oxide film layer 2 on the front surface of the silicon substrate 1: h film layer 4, phosphorus-doped SiC: the surface of the H film layer 4 is provided with a dielectric protection layer 5, the dielectric protection layer 5 is a silicon nitride film layer or a silicon oxynitride film layer, the back of the silicon substrate 1 is provided with a second dielectric protection layer 8, and the second dielectric protection layer 8 is an aluminum oxide superposed silicon nitride film layer. The thickness of the first silicon oxide film is 0.5-3 nm, preferably 1-1.5 nm; phosphorus-doped SiC: the refractive index of the H film layer is 2.0-3.0, and the deposition of the phosphorus-doped SiC: the thickness of the H film layer is 10-70nm, preferably 30-50 nm.
Example five:
a preparation method of a PERC crystalline silicon solar cell comprises the following steps;
s4: forming a second silicon dioxide film layer on the back of the silicon substrate;
specifically, the second silicon oxide film can be formed by thermal oxidation, ALD, O3, PECVD and other methods, wherein the thickness of the second silicon oxide film is 0.5-3 nm;
s5: and forming SiC on the surface of the second silicon dioxide film layer on the back surface of the silicon substrate: h, a film layer; wherein, SiC: and the H film layer is formed by introducing reaction gases SiH4 and CH4, and depositing SiC after 10-30 seconds: h film layer, the flow ratio of SiH4 and CH4 is 1: (3-12).
Specifically, selecting the PECVD equipment with N2, SiH4, NH3, CH4, BH3 gas circuit source and flow control meter, loading the back of a silicon wafer into a graphite boat, loading the silicon wafer into the reaction chamber of the graphite boat, raising the temperature to reach the reaction temperature at a constant temperature, vacuumizing the chamber for leak detection, introducing reaction gases SiH4 and CH4, and after 10-30 seconds, starting a radio frequency power supply to deposit SiC: h, the power of the radio frequency power supply is 4000W-19000W.
Introducing reaction gases including SiH4, CH4 and BH3, and depositing boron-doped SiC after introducing for 10-30 seconds: h film layer, the flow ratio of SiH4, CH4 and BH3 is 1: (3-12): (1-4), optionally, firstly introducing reaction gases SiH4 and CH4, and after 10-30 seconds of introduction, starting a radio frequency power supply to deposit SiC: h film layer, then introducing BH3 through ion implantation technology to deposit and form boron-doped SiC: and (3) preferably, directly and synchronously introducing SiH4, CH4 and BH3, and after 10-30 seconds of introduction, starting a radio frequency power supply to directly deposit boron-doped SiC through an in-situ doping process: h film, where the in-situ doping process is simpler and less equipment is used, it will be apparent to those skilled in the art that other reactive gases may also be used to effect deposition of boron doped SiC: h membrane layer, such as BBr 3.
Depositing boron-doped SiC: the reaction temperature of the H film layer is 350-500 ℃.
Optional boron-doped SiC: the H film layer forming mode can also adopt a PVD or CVD mode to deposit and form phosphorus-doped SiC: h, film layer.
Step S4 is followed by the steps of: and depositing a first dielectric protection layer on the surface of the H film layer, wherein the first dielectric protection layer is a silicon nitride film layer or a silicon oxynitride film layer.
When a silicon nitride film layer is formed, reaction gases SiH4 and NH3 are introduced for deposition, and the flow ratio of the reaction gases SiH4 to NH3 is 1: (6-12), preferably, the reaction temperature for depositing the silicon nitride film layer is 470-520 ℃.
When the silicon oxynitride film is formed, reaction gases SiH4, NH3 and N2O are introduced for deposition, and preferably, the reaction temperature for depositing the silicon oxynitride film is 470-520 ℃.
Step S4 also includes forming a combined film layer on the front surface of the silicon substrate; the combined film layer is a silicon nitride or silicon oxynitride combined film layer, the front surface of the conventional PERC crystalline silicon solar cell adopts a silicon nitride or silicon oxynitride combined film layer structure, and the specific deposition method of the silicon nitride or silicon oxynitride combined film layer is the prior art.
Example six:
the embodiment of the invention provides another technical scheme: a PERC crystalline silicon solar cell, which is manufactured through the fifth step of the foregoing embodiment, as shown in fig. 3, the PERC crystalline silicon solar cell specifically includes a silicon substrate 1, a second silicon dioxide film layer 6 is disposed on the back surface of the silicon substrate 1, and boron-doped SiC is disposed on the surface of the second silicon dioxide film layer 6 on the back surface of the silicon substrate 1: h film layer 3, wherein, boron-doped SiC: the surface of H rete 3 is provided with dielectric protection layer 5, and dielectric protection layer 5 is silicon nitride rete or silicon oxynitride rete, and 1 front of silicon substrate is provided with combination rete 7, and combination rete 7 is silicon nitride or silicon oxynitride combination rete, mixes boron SiC: the thickness of the H film layer is 10-70nm, preferably 30-50nm, and the thickness of the boron-doped SiC: the refractive index of the H film layer is 1.9-2.8.
Example seven:
any one of the above embodiments can be prepared by using the preparation method in the embodiment, and the preparation method comprises the following steps;
(1) texturing;
specifically, a P-type monocrystalline silicon wafer is used as a silicon substrate, texturing treatment is firstly carried out, then cleaning is carried out in an HF solution, the surface of the silicon wafer is cleaned, and the light trapping effect of the silicon wafer is improved;
(2) phosphorus is diffused to form a pn junction;
specifically, phosphorus atoms enter the surface layer of the silicon wafer from the periphery, and permeate and diffuse into the silicon wafer through pores among the silicon atoms, so that an N type is formed on the whole outer surface of the silicon wafer, the interior of the silicon wafer is also an original P type, and a pn structure is formed on the silicon wafer;
(3) removing back knots:
specifically, the front surface is protected by a water film, the phosphorosilicate glass and the back surface diffusion layer in the back surface field area are removed in an HF/HNO3 mixed solution, and then the front surface phosphorosilicate glass is removed through an HF solution;
(4) growing an oxide layer;
specifically, the method comprises the following steps of forming a first silicon oxide film layer on the front surface of a silicon substrate; in another embodiment, a second silicon dioxide film layer is formed on the back surface of the silicon substrate;
(5) growing a passivation layer;
specifically, the method comprises an embodiment that SiC: h film layer, in another embodiment, SiC: h, film layer.
(6) Back laser grooving (optional);
(7) screen printing to form positive and negative electrodes, and sintering.
Specifically, in order to output the electric energy obtained by the photoelectric conversion of the battery, a positive electrode and a negative electrode are required to be manufactured on the battery, namely, a conductive material which forms tight ohmic contact on a p-n junction of the battery, the electrodes are manufactured by using a screen printing method, then, the slurry on a silicon wafer is dried by a sintering process, and the organic components of the slurry are burnt out, so that the slurry and the silicon wafer form good ohmic contact.
While certain exemplary embodiments of the present invention have been described above by way of illustration only, it will be apparent to those of ordinary skill in the art that the described embodiments may be modified in various different ways without departing from the spirit and scope of the invention. Accordingly, the drawings and description are illustrative in nature and should not be construed as limiting the scope of the invention.

Claims (26)

1. A preparation method of a PERC crystalline silicon solar cell is characterized by comprising the following steps;
s1: forming a first silicon oxide film layer on the front surface of the silicon substrate;
s2: forming SiC on the surface of the first silicon oxide film layer on the front surface of the silicon substrate: h, a film layer;
wherein, SiC: and the H film layer is deposited by introducing reaction gases SiH4 and CH4, the introduction time is 10-30 seconds, and the introduction flow ratio of the reaction gases SiH4 to CH4 is 1: (2-10).
2. The method as claimed in claim 1, wherein in step S2, reaction gases SiH4, CH4 and PH3 are introduced to deposit phosphorus-doped SiC: and (3) an H film layer, wherein the introducing time is 10-30 seconds, and the introducing flow ratio of the reaction gases SiH4, CH4 and PH3 is 1: (2-10): (0.5 to 3).
3. The method according to claim 1, characterized in that the deposition of SiC: the reaction temperature of the H film layer is 350-500 ℃.
4. The method according to any one of claims 1 to 3, wherein the step S2 is further followed by:
after phosphorus-doped SiC: and depositing the H film layer to form a first dielectric protection layer.
5. The method of claim 4, wherein when the first dielectric passivation layer is a silicon nitride layer, the deposition is performed by introducing SiH4 and NH3, and the flow ratio of SiH4 to NH3 is 1: (6-12).
6. The method of claim 4, wherein when the first dielectric passivation layer is a silicon oxynitride layer, the deposition is performed by introducing SiH4, NH3, and N2O.
7. The method according to any one of claims 1 to 3, wherein the step S1 further includes: and forming a second dielectric protection layer on the back surface of the silicon substrate.
8. The method as claimed in claim 7, wherein the step S2 is followed by a step S3: forming SiC on the surface of the second dielectric protection layer on the back surface of the silicon substrate: h, film layer.
9. The preparation method according to claim 8, wherein the step S3 specifically comprises: depositing on the surface of the second silicon dioxide film layer on the back surface of the silicon substrate to form SiC: h film layer, deposition to form SiC: the H film layer is formed by introducing reaction gases SiH4 and CH4, the introduction time is 10-30 seconds, and the flow ratio of the reaction gases SiH4 to CH4 is 1: (3-12).
10. The preparation method according to claim 9, wherein the step S3 is to inject the reaction gases SiH4, CH4, and BH3, and deposit the boron-doped SiC after 10 to 30 seconds of injection: h film layer, the flow ratio of SiH4, CH4 and BH3 is 1: (3-12): (1-4).
11. The method of claim 10, further comprising adding a boron-doped SiC: and depositing the H film layer to form a first dielectric protection layer.
12. A PERC crystalline silicon solar cell, characterized in that it is made by the steps of any one of claims 1 to 11, said crystalline silicon solar cell comprising a silicon substrate (1);
the front surface of the silicon substrate (1) is provided with a first silicon oxide film layer (2), and the surface of the first silicon oxide film layer (2) is deposited with phosphorus-doped SiC: h film layer (4).
13. The PERC crystalline silicon solar cell as recited in claim 12, wherein a second silicon dioxide film layer (6) is arranged on the back surface of the silicon substrate (1), and boron-doped SiC: h film layer (3).
14. The PERC crystalline silicon solar cell of claim 13, wherein said boron doped SiC: h film layer (3) and phosphorus-doped SiC: the surfaces of the H film layers (4) are provided with first dielectric protection layers (5).
15. The PERC crystalline silicon solar cell according to claim 12, wherein said silicon substrate (1) is provided with a second dielectric protection layer (8) on its back side.
16. The PERC crystalline silicon solar cell according to claim 12, wherein the thickness of the first silicon oxide film layer (2) is 0.5-3 nm, and the phosphorus-doped SiC: the thickness of the H film layer (4) is 10-70nm, and the thickness of the phosphorus-doped SiC: the refractive index of the H film layer (4) is 2.0-3.0.
17. The PERC crystalline silicon solar cell as recited in claim 16, wherein the thickness of the first silicon oxide film layer (2) is 1 to 1.5 nm.
18. The PERC crystalline silicon solar cell of claim 16, wherein said phosphorus doped SiC: the thickness of the H film layer (4) is 30-50 nm.
19. A preparation method of a PERC crystalline silicon solar cell is characterized by comprising the following steps;
s4: forming a second silicon dioxide film layer on the back of the silicon substrate;
s5: and forming SiC on the surface of the second silicon dioxide film layer on the back surface of the silicon substrate: h, a film layer;
wherein, SiC: and the H film layer is formed by introducing reaction gases SiH4 and CH4, and depositing SiC after 10-30 seconds: h film layer, the flow ratio of the reaction gases SiH4 and CH4 is 1: (3-12).
20. The preparation method of claim 19, wherein in the step S5, the reaction gases are SiH4, CH4, and BH3, and after 10 to 30 seconds of introduction, boron-doped SiC is deposited: h film layer, the flow ratio of the reaction gases SiH4, CH4 and BH3 is 1: (3-12): (1-4).
21. The method according to claim 19, wherein the step of performing step S4 further comprises performing step S after the step of performing step S4 on the boron-doped SiC: and depositing the H film layer on the surface to form a first dielectric protection layer, and depositing the H film layer on the front surface of the silicon substrate to form a combined film layer.
22. A PERC crystalline silicon solar cell, characterized in that it is made by the steps of any one of claims 18 to 20, said crystalline silicon solar cell comprising a silicon substrate (1);
the back of the silicon substrate (1) is provided with a second silicon dioxide film layer (6), and boron-doped SiC is deposited on the surface of the second silicon dioxide film layer (6) on the back of the silicon substrate (1): h film layer (3).
23. The PERC crystalline silicon solar cell of claim 22, wherein said boron doped SiC: the surface of the H film layer (3) is provided with a first dielectric protection layer (5), and the front surface of the silicon substrate (1) is provided with a combined film layer (7).
24. The PERC crystalline silicon solar cell of claim 22, wherein said boron doped SiC: the thickness of the H film layer (3) is 10-70nm, and the thickness of the boron-doped SiC: the refractive index of the H film layer (3) is 1.9-2.8, and the thickness of the second silicon dioxide film layer (6) is 0.5-3 nm.
25. The PERC crystalline silicon solar cell of claim 24, wherein said boron doped SiC: the thickness of the H film layer (3) is 30-50 nm.
26. The PERC crystalline silicon solar cell according to claim 24, wherein the thickness of the second silicon dioxide film layer (6) is 1 to 1.5 nm.
CN202110919743.9A 2021-08-11 2021-08-11 PERC crystalline silicon solar cell and preparation method thereof Pending CN113809184A (en)

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CN111029436A (en) * 2019-10-14 2020-04-17 中建材浚鑫科技有限公司 P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof
CN112768534A (en) * 2020-12-31 2021-05-07 江苏润阳世纪光伏科技有限公司 Silicon oxide passivated PERC double-sided battery and preparation method thereof
CN113097346A (en) * 2021-04-20 2021-07-09 山西潞安太阳能科技有限责任公司 Laminated film passivation structure suitable for back of silicon battery

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110140223A (en) * 2016-12-12 2019-08-16 洛桑联邦理工学院 Silicon heterogenous solar battery and manufacturing method
CN111029436A (en) * 2019-10-14 2020-04-17 中建材浚鑫科技有限公司 P-type single crystal PERC battery capable of improving LeTID phenomenon and manufacturing method thereof
CN112768534A (en) * 2020-12-31 2021-05-07 江苏润阳世纪光伏科技有限公司 Silicon oxide passivated PERC double-sided battery and preparation method thereof
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