CN113808948A - Method for preparing back hole of GaN device on diamond substrate - Google Patents

Method for preparing back hole of GaN device on diamond substrate Download PDF

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Publication number
CN113808948A
CN113808948A CN202111036982.6A CN202111036982A CN113808948A CN 113808948 A CN113808948 A CN 113808948A CN 202111036982 A CN202111036982 A CN 202111036982A CN 113808948 A CN113808948 A CN 113808948A
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diamond substrate
back hole
etching
gan device
metal
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CN202111036982.6A
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吴立枢
孔月婵
陈堂胜
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CETC 55 Research Institute
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CETC 55 Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
    • H01L29/6609—Diodes
    • H01L29/66143—Schottky diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/107—Substrate region of field-effect devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66446—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET]
    • H01L29/66462—Unipolar field-effect transistors with an active layer made of a group 13/15 material, e.g. group 13/15 velocity modulation transistor [VMT], group 13/15 negative resistance FET [NERFET] with a heterojunction interface channel or gate, e.g. HFET, HIGFET, SISFET, HJFET, HEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66522—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with an active layer made of a group 13/15 material

Abstract

The invention discloses a method for preparing a back hole of a diamond substrate GaN device, which comprises the following steps: 1) preparing a diamond substrate GaN device; 2) coating bonding material on the front surface of the temporary slide; 3) bonding the GaN device and the temporary slide; 4) depositing a metal mask on the surface of the diamond substrate, and stripping metal to obtain a back hole pattern; 5) carrying out laser etching on the diamond substrate according to the back hole pattern; 6) performing plasma dry etching until the diamond substrate in the back hole is completely etched; 7) carrying out plasma dry etching on the GaN epitaxial layer in the back hole; 8) polishing to remove the mask on the surface of the diamond substrate; 9) depositing seed layer metal on the back surface and the back hole of the diamond substrate, and electroplating to deposit back gold; 10) the temporary slide is separated and the adhesive material is removed. The invention combines laser and plasma dry etching, has the advantages of high etching rate and good surface appearance of the back hole, and solves the problem that the back hole of the GaN device on the diamond substrate is difficult to prepare.

Description

Method for preparing back hole of GaN device on diamond substrate
Technical Field
The invention belongs to the technical field of semiconductor processes, and particularly relates to a method for preparing a back hole of a GaN device on a diamond substrate.
Background
The GaN device is used as a third generation wide bandgap compound semiconductor device and has the characteristics of high two-dimensional electron gas concentration, high breakdown field strength, high electron saturation velocity and the like. However, the current GaN device generates a large amount of heat especially when outputting large power, but cannot quickly and effectively dissipate the heat. With the significant rise in device junction temperature, the GaN device output power degrades rapidly. It can be said that the heat dissipation problem has become a bottleneck limiting the further development and application of GaN devices, especially power devices. The diamond substrate GaN device is a hotspot of current research, and compared with the current sapphire substrate GaN, silicon substrate GaN and silicon carbide substrate GaN devices, the diamond substrate GaN device has the advantage of better heat dissipation, and the performance of the GaN device can be further improved.
However, the diamond substrate material has great hardness, which is a difficult problem in the preparation process of the back hole of the diamond substrate GaN device, and the back hole directly influences the grounding of the device, thereby restricting the performance of the device. The conventional laser etching rate is high, but the front metal layer of the GaN device is easily etched through directly, so that the use of the GaN device is influenced, and meanwhile, the surface is rough after laser etching. The existing plasma dry etching rate is low, but the etching appearance of the diamond material is good, and the etching depth is easy to control.
Disclosure of Invention
The invention provides a method for preparing a back hole of a diamond substrate GaN device, and aims to solve the problem of preparing the back hole of the diamond substrate GaN device and enable the device to be grounded well.
The technical scheme of the invention is that the method for preparing the back hole of the GaN device on the diamond substrate comprises the following steps:
1) completing the preparation of the diamond substrate GaN device;
2) coating an adhesive material as a bonding material on the front surface of the temporary slide;
3) putting the front sides of the diamond substrate GaN device and the temporary slide glass into a bonding machine oppositely for bonding;
4) depositing a metal mask on the surface of the diamond substrate by a photoetching development process, and obtaining a back hole pattern in a metal stripping mode;
5) performing laser etching on the diamond substrate by adopting a pulse laser according to the back hole pattern, wherein the back hole depth of the diamond substrate after the laser etching is 70-80 mu m;
6) carrying out plasma dry etching on the residual diamond in the back hole of the diamond substrate until the diamond substrate in the back hole is completely etched;
7) carrying out plasma dry etching on the GaN epitaxial layer in the back hole until the front metal is etched;
8) completely removing the mask on the surface of the diamond substrate by a polishing method;
9) depositing seed layer metal on the back surface and the back hole of the diamond substrate, and then electroplating and depositing back gold on the seed layer metal;
10) the temporary slide is separated and the adhesive material is cleaned using a cleaning agent.
Further, the GaN device in the step 1) is a high electron mobility transistor, a field effect transistor or a Schottky diode, and the thickness of the diamond substrate is 100-150 μm.
Further, step 2) coating an adhesive material on the front surface of the temporary slide as a bonding material by using a coating machine, wherein the rotation speed of the coating machine is 1000-3000rpm for 30-60s, and the adhesive material at least comprises one of a resin material, a glue material and liquid wax.
Further, the bonding temperature in step 3) is 250-350 ℃.
Further, the metal mask in step 4) at least comprises one of Al, Au and Ni, and the thickness is 1-5 μm; the back hole pattern is a circle having a diameter of 50-80 μm.
Further, the pulse laser in the step 5) is a pulse laser containing ultraviolet to infrared bands.
Further, the plasma gas adopted in the plasma dry etching in the step 6) is a mixed gas at least containing oxygen, argon and trifluoromethane; the etching power is 500-2000W and the flow rate of the mixed gas is 50-150 sccm.
Further, the plasma gas adopted in the plasma dry etching in the step 7) is a mixed gas at least containing chlorine, argon and boron trichloride; the etching power is 300-2000W during etching, the flow rate of the mixed gas is 20-80 sccm, and the thickness of the etched GaN epitaxial layer is 1-3 μm.
Further, the seed layer metal in the step 9) comprises two to four metals of W, Ti, Ni and Au; the metal thickness of the seed layer is 200-500 nm; the thickness of the back gold deposited by electroplating is 2-5 μm.
Further, the method for temporary slide separation in step 10) is mechanical separation or pyrolytic separation.
The invention has the advantages that: compared with the prior art, the method for preparing the back hole of the GaN device on the diamond substrate by using the method combining laser etching and plasma dry etching has the advantages of high etching rate and good surface appearance of the back hole, and solves the problem that the back hole of the GaN device on the diamond substrate is difficult to prepare.
Drawings
Fig. 1 is a schematic diagram of a diamond substrate GaN device sample.
FIG. 2 is a schematic diagram of the bonding of a temporary carrier front side down and diamond-substrate GaN device.
Fig. 3 is a diagram illustrating a back hole pattern of a metal mask.
Fig. 4 is a schematic diagram of laser etching of a diamond substrate.
Fig. 5 is a schematic diagram of plasma dry etching of a diamond substrate and a GaN epitaxial layer.
FIG. 6 is a schematic diagram of electroplating of gold-backed layer.
Fig. 7 is a schematic diagram of a sample diamond-substrate GaN device with a back hole.
Description of reference numerals: 1. a diamond substrate; 2. a GaN epitaxial layer; 3. a GaN device front metal; 4. a bonding material; 5. temporary slide; 6. a metal mask; 7. and depositing back gold.
Detailed Description
The present invention is further described with reference to the following examples, which are provided for illustration only and are not to be construed as limiting the scope of the claims, and other alternatives which may occur to those skilled in the art are also within the scope of the claims.
Example 1
A method for preparing a back hole of a diamond substrate GaN device comprises the following steps:
1) preparing a sample: completing the preparation of a diamond substrate GaN device, wherein the GaN device is a high electron mobility transistor and the thickness of the diamond substrate is 100 μm, and a sample schematic diagram of the diamond substrate GaN device is shown in FIG. 1, wherein 1 is the diamond substrate; 2 is a GaN epitaxial layer; and 3 is the front metal of the GaN device.
2) A sapphire sheet was used as a temporary support sheet, and an adhesive material was applied as a bonding material on the front surface of the temporary support sheet using a coating machine, wherein the rotational speed of the coating machine was 1000rpm for 30 seconds, and the adhesive material was a resin material.
3) Temporary bonding: and oppositely placing the front surfaces of the diamond substrate GaN device and the temporary slide glass into a bonding machine for bonding at the temperature of 250 ℃, wherein FIG. 2 is a schematic bonding diagram of the temporary slide glass with the front surface facing downwards and the diamond substrate GaN device, 4 is a bonding material, and 5 is the temporary slide glass.
4) Back hole patterning: depositing a metal mask with the thickness of 1 mu m on the surface of the diamond substrate by a photoetching development process, and obtaining a back hole pattern in a metal stripping mode, wherein the back hole pattern is a circle with the diameter of 50 mu m, and the metal mask is an Al film; fig. 3 is a schematic diagram of a back hole pattern of a metal mask, wherein 6 is a metal mask obtained by deposition.
5) Laser etching: performing laser etching on the diamond substrate by adopting an ultraviolet pulse laser according to the back hole pattern, wherein the back hole depth of the diamond substrate after the laser etching is 70 mu m; fig. 4 is a schematic diagram of laser etching of a diamond substrate.
6) And (3) plasma dry etching: carrying out plasma dry etching on the residual diamond in the back hole of the diamond substrate until the diamond substrate in the back hole is completely etched, wherein the plasma gas adopted by the plasma dry etching is a mixed gas containing oxygen, argon and trifluoromethane; the etching power is 500W during etching, and the flow rate of the mixed gas is 50 sccm; fig. 5 is a schematic diagram of plasma dry etching of a diamond substrate and a GaN epitaxial layer.
7) Carrying out plasma dry etching on the GaN epitaxial layer in the back hole until the front metal is etched; wherein the plasma gas adopted by the plasma dry etching is a mixed gas containing chlorine, argon and boron trichloride; the etching power is 300W during etching, the flow rate of the mixed gas is 20 sccm, and the thickness of the etched GaN epitaxial layer is 1 μm.
8) Completely removing the mask on the surface of the diamond substrate by a polishing method;
9) electroplating back gold: depositing seed layer metal on the back surface and the back hole of the diamond substrate, and then electroplating and depositing back gold on the seed layer metal, wherein the seed layer metal comprises two metals of W and Ti; the metal thickness of the seed layer is 200 nm; the thickness of the back gold deposited by electroplating is 2 μm; FIG. 6 is a schematic diagram of electroplating of back gold, wherein 7 is deposition of back gold.
10) And (3) bonding removal: separating the temporary slide by using a mechanical separation method and cleaning the adhesive material by using a cleaning agent; fig. 7 is a schematic diagram of a sample of a diamond-substrate GaN device with a back hole.
Through the steps, the preparation of the back hole of the GaN device on the diamond substrate is realized.
Example 2
A method for preparing a back hole of a GaN device on a diamond substrate basically comprises the following steps of:
step 1) the GaN device is a field effect transistor, and the thickness of the diamond substrate is 120 mu m.
The rotating speed of the coating machine in the step 2) is 2000rpm, the time is 45s, and the bonding material is a glue material.
The bonding temperature in step 3) was 300 ℃.
And 4) depositing a metal mask with the thickness of 3 mu m in the step 4), wherein the back hole pattern is a circle with the diameter of 60 mu m, and the metal mask is an Au film.
And 5) etching by adopting an infrared pulse laser, wherein the depth of the back hole is 75 micrometers.
And 6) etching power is 1000W during etching, and the flow rate of the mixed gas is 100 sccm.
And 7) etching power is 1000W during etching, the flow rate of the mixed gas is 50 sccm, and the thickness of the etched GaN epitaxial layer is 2 microns.
The seed layer metal in the step 9) comprises W, Ti and Au three metals; the metal thickness of the seed layer is 300 nm; the thickness of the back gold deposited by electroplating is 3 μm.
The temporary slide is separated in the step 10) by using a pyrolysis separation method.
Example 3
A method for preparing a back hole of a GaN device on a diamond substrate basically comprises the following steps of:
the GaN device in the step 1) is a Schottky diode, and the thickness of the diamond substrate is 150 micrometers.
The rotating speed of the coating machine in the step 2) is 3000rpm, the time is 60s, and the bonding material is liquid wax.
The bonding temperature in step 3) was 350 ℃.
And 4) depositing a metal mask with the thickness of 5 mu m in the step 4), wherein the back hole pattern is a circle with the diameter of 80 mu m, and the metal mask is a Ni film.
And step 5), the depth of the back hole is 80 mu m.
And 6) etching power is 2000W during etching, and the flow rate of the mixed gas is 150 sccm.
And 7) during etching, the etching power is 2000W, the flow rate of the mixed gas is 80 sccm, and the thickness of the etched GaN epitaxial layer is 3 microns.
Step 9), the seed layer metal contains four metals of W, Ti, Ni and Au; the metal thickness of the seed layer is 500 nm; the thickness of the back gold deposited by electroplating is 5 μm.
It should be noted that the above-mentioned embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.

Claims (10)

1. A method for preparing a back hole of a diamond substrate GaN device is characterized by comprising the following steps:
1) completing the preparation of the diamond substrate GaN device;
2) coating an adhesive material as a bonding material on the front surface of the temporary slide;
3) putting the front sides of the diamond substrate GaN device and the temporary slide glass into a bonding machine oppositely for bonding;
4) depositing a metal mask on the surface of the diamond substrate by a photoetching development process, and obtaining a back hole pattern in a metal stripping mode;
5) performing laser etching on the diamond substrate by adopting a pulse laser according to the back hole pattern, wherein the back hole depth of the diamond substrate after the laser etching is 70-80 mu m;
6) carrying out plasma dry etching on the residual diamond in the back hole of the diamond substrate until the diamond substrate in the back hole is completely etched;
7) carrying out plasma dry etching on the GaN epitaxial layer in the back hole until the front metal is etched;
8) completely removing the mask on the surface of the diamond substrate by a polishing method;
9) depositing seed layer metal on the back surface and the back hole of the diamond substrate, and then electroplating and depositing back gold on the seed layer metal;
10) the temporary slide is separated and the adhesive material is cleaned using a cleaning agent.
2. The method as claimed in claim 1, wherein the GaN device of step 1) is a high electron mobility transistor, a field effect transistor or a Schottky diode, and the diamond substrate has a thickness of 100-150 μm.
3. The method as claimed in claim 1, wherein the step 2) uses a coating machine to coat the adhesive material as the bonding material on the front surface of the temporary slide, wherein the coating machine has a rotation speed of 1000-3000rpm for 30-60s, and the adhesive material comprises at least one of a resin material, a glue material and a liquid wax.
4. The method as claimed in claim 1, wherein the bonding temperature in step 3) is 250-350 ℃.
5. The method of claim 1, wherein the metal mask of step 4) comprises at least one of Al, Au, Ni, and has a thickness of 1-5 μm; the back hole pattern is a circle having a diameter of 50-80 μm.
6. The method of claim 1, wherein the pulsed laser of step 5) is a pulsed laser comprising an ultraviolet to infrared band.
7. The method according to claim 1, wherein the plasma gas used in the plasma dry etching in step 6) is a mixed gas containing at least oxygen, argon and trifluoromethane; the etching power is 500-2000W and the flow rate of the mixed gas is 50-150 sccm.
8. The method according to claim 1, wherein the plasma gas used in the step 7) is a mixed gas containing at least chlorine gas, argon gas and boron trichloride; the etching power is 300-2000W during etching, the flow rate of the mixed gas is 20-80 sccm, and the thickness of the etched GaN epitaxial layer is 1-3 μm.
9. The method of claim 1, wherein the seed layer metal of step 9) comprises two to four metals of W, Ti, Ni, Au; the metal thickness of the seed layer is 200-500 nm; the thickness of the back gold deposited by electroplating is 2-5 μm.
10. The method as claimed in claim 1, wherein the method of step 10) temporary slide separation is mechanical separation or pyrolytic separation.
CN202111036982.6A 2021-09-06 2021-09-06 Method for preparing back hole of GaN device on diamond substrate Pending CN113808948A (en)

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Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102214565A (en) * 2010-04-09 2011-10-12 中国科学院微电子研究所 Method for thinning carborundum wafer
CN102339751A (en) * 2010-07-21 2012-02-01 中国科学院微电子研究所 Method for improving later process of gallium nitride field-effect transistor
US20130288489A1 (en) * 2009-05-15 2013-10-31 Translith Systems, Llc Method and Apparatus to Fabricate Vias in Substrates for Gallium Nitride MMICs
CN105470131A (en) * 2015-12-30 2016-04-06 东莞市青麦田数码科技有限公司 Method for fabricating back hole of gallium arsenide-based HEMT device
CN106684061A (en) * 2016-12-14 2017-05-17 中国电子科技集团公司第五十五研究所 Method for producing indium phosphide back hole
CN109904110A (en) * 2017-12-08 2019-06-18 中芯长电半导体（江阴）有限公司 Form the lithographic method and its structure of vertical hole
CN112992678A (en) * 2021-02-05 2021-06-18 中国电子科技集团公司第十三研究所 Preparation method of GaN field effect transistor based on diamond substrate

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20130288489A1 (en) * 2009-05-15 2013-10-31 Translith Systems, Llc Method and Apparatus to Fabricate Vias in Substrates for Gallium Nitride MMICs
CN102214565A (en) * 2010-04-09 2011-10-12 中国科学院微电子研究所 Method for thinning carborundum wafer
CN102339751A (en) * 2010-07-21 2012-02-01 中国科学院微电子研究所 Method for improving later process of gallium nitride field-effect transistor
CN105470131A (en) * 2015-12-30 2016-04-06 东莞市青麦田数码科技有限公司 Method for fabricating back hole of gallium arsenide-based HEMT device
CN106684061A (en) * 2016-12-14 2017-05-17 中国电子科技集团公司第五十五研究所 Method for producing indium phosphide back hole
CN109904110A (en) * 2017-12-08 2019-06-18 中芯长电半导体（江阴）有限公司 Form the lithographic method and its structure of vertical hole
CN112992678A (en) * 2021-02-05 2021-06-18 中国电子科技集团公司第十三研究所 Preparation method of GaN field effect transistor based on diamond substrate

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